JP2007033160A - Bolometer type infrared detection element and detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bolometer type infrared detection element capable of detecting an infrared ray by driving the bolometer in a wide temperature range without providing a temperature control element having a large-capacity temperature control ability, without reducing a design load of a heat radiation mechanism around a detector, and without enlarging a resistance value range readable by a reading-out circuit. <P>SOLUTION: In the cut state of switches, three bolometer thin films 34 are connected in series, and the total resistance value is 3R. When an environmental temperature rises and the total resistance value of the bolometer thin films 34 almost exceeds a measuring range of an external resistance value reading-out circuit, the switches 37a, 37b are switched to the connection state. Hereby, an electrode 35a is connected to an electrode 35c, and an electrode 35b is connected to an electrode 35d, and the three bolometer thin films 34 are connected in parallel, and the total resistance value becomes R/3, and a bolometer resistance can be read out in a wide environmental temperature range. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a bolometer-type infrared detecting element and a detector that detect infrared rays by changing a resistance value of a bolometer resistor.

  FIG. 5 is a cross-sectional view showing the structure of the bolometer-type infrared detector 1. In general, the bolometer-type infrared detector 1 includes a vacuum vessel 2 that keeps the inside in a vacuum, a window 3 that is provided on the upper surface of the vacuum vessel 1 and serves as an infrared incident opening, and an external for connecting to the outside of the detector. The connection terminal 4, the temperature control element 7 provided on the inner bottom surface of the vacuum vessel 2, the semiconductor substrate 6 provided on the temperature control element 7, and the infrared rays formed on the semiconductor substrate 6 are detected. And a bolometer-type infrared detecting element 5.

  FIG. 6 is a plan view showing the bolometer-type infrared detection element 5 described in Patent Document 1. As shown in FIG. The infrared detection element 5 includes an infrared detection unit 10 that is irradiated with infrared rays, and a pair of beam portions 12 that hold the infrared detection unit 10 in a state of floating from the substrate 6. The infrared detection unit 10 has a structure in which the bolometer thin film 8 is laminated on the absorption film 11 that absorbs infrared rays, and the beam unit 12 has a structure in which the electrode lead 9 is laminated on the absorption film 11. One end 13 of the beam portion 12 is in contact with the substrate 6, but the other end is separated from the substrate 6 and is in a non-contact state. The infrared detecting unit 10 is held away from the substrate 6 and suspended in the air. Thus, the bolometer thin film 8 and the absorption film 11 have a diaphragm structure that is thermally separated from the substrate 6 by the infrared detection unit 10. The bolometer thin film 8 is divided into three strip-shaped divided thin films, and these divided thin films are arranged with a slight gap therebetween. The central divided thin film is electrically connected to one end of one outer divided thin film by an electrode 15 at one end in the longitudinal direction, and to the other end of the other outer divided thin film at the other end. The electrodes 15 are electrically connected. The other end of the one divided thin film and the one end of the other divided thin film are connected to the electrode lead 9 via the electrode 15, respectively. All electrode leads 9 are connected to an external resistance value reading terminal 14. Thus, three divided thin films of the bolometer thin film 8 are connected in series between the pair of electrode leads 9.

  The bolometer thin film 8 is electrically a resistor, and the bolometer thin film 8 is stretched on the absorption film 11 that absorbs infrared rays. When infrared rays are incident on the infrared detector 10, infrared energy is absorbed by the absorption film 11, and the temperature of the bolometer thin film 8 rises. Since the resistance value of the bolometer thin film 8 has temperature characteristics, the resistance value changes when the temperature of the bolometer thin film 8 rises. This temperature characteristic of the resistance value is referred to as a temperature coefficient of resistance (TCR).

  A material having a large absolute value of TCR, such as titanium, vanadium oxide, yttrium barium copper oxide, or amorphous silicon, is usually used for the bolometer resistor. The bolometer-type detector detects infrared rays by taking out the change in the resistance value as an electrical signal by a reading circuit when the temperature change is caused by the incidence of infrared rays and the resistance value is changed.

  As described above, the bolometer resistance value has a temperature characteristic. For this reason, even when the infrared rays are not incident, when the heat of the semiconductor substrate flows into the bolometer thin film 8 via the beam, the temperature of the bolometer thin film 8 changes, so that the resistance value changes. When the ambient temperature range in which the detector is used is narrow, the temperature control element 7 may perform control so that the bolometer resistance value becomes a resistance value in a range that can be read by an external readout circuit. However, when the bolometer type detector is used in a wide environmental temperature range, the conventional bolometer type detector shown in FIG. 6 has a bolometer regardless of the environmental temperature in order to make the range of the output resistance value readable. It is necessary to keep the temperature of the thin film 8 within a certain range. For this purpose, the temperature control element 7 needs to be driven with high power.

JP 2003-121255 A JP-A-8-145715 JP-A-9-283305

  In general, a detector using a bolometer with a large absolute value of TCR cannot be used in a wide temperature range because the bolometer resistance changes greatly. When the bolometer type detector is to be used in a wide temperature range, it is necessary to forcibly change the bolometer temperature by the temperature control element 7 mounted on the detector. In order to execute this method, the temperature control element 7 needs to have a large-capacity temperature control capability. Therefore, the load of voltage and current applied to drive the temperature control element 7 increases, and the design load of the heat dissipation mechanism around the detector also increases. Even if the resistance value changes due to a change in the environmental temperature, it can be read out if the reading range of the bolometer resistance value assumed by the reading circuit is wide. However, in this case, the area of the readout circuit increases in order to enable reading over a wide range, instead of reducing the driving load of the temperature control element 7.

  The present invention has been made in view of such problems, and does not provide a temperature control element having a large-capacity temperature control capability. Therefore, the design load of the heat dissipation mechanism around the detector is small, and the readout circuit is further provided. An object of the present invention is to provide a bolometer-type infrared detecting element and detector capable of detecting infrared rays by driving a bolometer in a wide temperature range without increasing the readable resistance value range.

  A bolometer-type infrared detection element according to the present invention includes a substrate, an infrared detection unit, and a beam unit that supports the infrared detection unit so as to be separated from the substrate, and the infrared detection unit is rectangular in a plan view. A plurality of bolometer thin films that are formed in parallel and spaced apart from each other, and currents flowing through adjacent bolometer thin films that are provided to contact each end of the bolometer thin film flow in different directions. A plurality of electrodes for connecting the bolometer thin film in series, and the beam portion is provided on a bolometer thin film that serves as a start end and a terminal end of the serial connection body of the bolometer thin film when the switch is in a disconnected state. And a plurality of switches that switch between adjacent electrodes to a connected or disconnected state.

  In this bolometer-type infrared detector, it is preferable that the infrared detector is provided with an absorption film that absorbs infrared rays, and the bolometer thin film is formed on the absorption film.

  The switch may be provided in the infrared detection unit, and the beam unit may be configured to have a signal line unit that sends a switching signal to the switch. Further, the switch is provided on a substrate, and the beam portion is formed with another lead portion connected to an electrode other than the electrode connected to the lead portion, and the switch and the lead portion and It can also be configured such that it is connected to other lead portions via wiring provided on the substrate.

  Further, the base end portion of the beam portion may support the infrared detection unit, and the distal end portion of the beam portion may be supported by the substrate. And it can also comprise so that the contact connected with the wiring provided in the said board | substrate may be formed in the front-end | tip part of the said beam part.

  The infrared detector according to the present invention includes a vacuum container provided with a window through which infrared rays are transmitted, a temperature control element provided in the container, and the temperature control element mounted on the temperature control element. It has the infrared detection element of any one of these, and the terminal for external connection provided in the wall of the said container and performing transmission / reception of the signal with respect to the said infrared detection element, It is characterized by the above-mentioned.

  According to the present invention, all the bolometer thin films are connected in series when all the switches are turned off. When the switch is selectively connected, a pair of bolometer thin films that are in contact with the pair of electrodes connected by the connected switch are connected at the other end by another electrode. Therefore, it will be connected in parallel. As a result, a pair of electrodes connected to the lead portion, that is, a pair of electrodes provided on the bolometer thin film serving as the start and end portions of the serial connection body of the bolometer thin film when the switch is in a disconnected state. The total resistance value of the bolometer thin film between them becomes different. For example, when the number of bolometer thin films is N and the resistance value of one bolometer thin film is R, the total resistance value of the bolometer thin films connected in series is NR if all the switches are disconnected. . On the other hand, when all the switches are connected, all the bolometer thin films are connected in parallel, so that the total resistance value is R / N. If the temperature of the semiconductor substrate flows into the bolometer thin film instead of the incidence of infrared light and the temperature rises, the switch can be selectively switched to the connected state to reduce the total resistance of the bolometer thin film. At least part of the increase in resistance value due to temperature rise due to heat from the substrate can be offset, and the increase in resistance value caused by the incidence of infrared radiation within the readable resistance range of the external signal readout circuit And detecting infrared rays and / or detecting the amount of infrared rays.

  According to the present invention, the bolometer resistance value (detected resistance value of the external circuit), which is the total resistance value, is changed by simply switching the switch to change the connection state of the plurality of rectangular bolometer thin films. At least a part of the increase in resistance value caused by disturbance such as a temperature rise due to inflow can be offset. As a result, even if the resistance value increase due to disturbance is added and the detected resistance value is out of the readable range of the external circuit, the detected resistance value can be returned to the readable range by simply switching the switch. When infrared rays are incident in this state, the readout circuit can detect an increase in resistance value due to a temperature increase due to the incidence of infrared rays. For this reason, it is not necessary to control the temperature of the infrared detection element with a large-capacity temperature control element so that the bolometer temperature is constant, and without increasing the readable resistance value range of the readout circuit. Infrared light can be detected in a wide environmental temperature range.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. FIG. 1 is a plan view showing a bolometer infrared detecting element according to the first embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram thereof. In the infrared detection element 30, a central infrared detection unit 31 and beam portions 32 a and 32 b on both sides thereof are arranged on a semiconductor substrate 6. Base ends of the beam portions 32 a and 32 b are connected to the infrared detection unit 31, and tip portions of the beam portions 32 a and 32 b are fixed to the upper surface of the substrate 6. The beam portions 32 a and 32 b are in contact with the substrate 6 only at the distal end portions, and the base end portions are separated from the substrate 6 by an appropriate length. The base end portions of the beam portions 32a and 32b are connected to the infrared detection unit 31, and thus the beam portions 32a and 32b support the infrared detection unit 31 while being separated from the substrate 6 and suspended. As will be described later, the distal ends of the beam portions 32a and 32b are contacts 39, 40 and 41 between the wiring formed on the substrate 6 and the leads 36a and 36b and the signal lines 38c on the beam portions 32a and 32b. It has become.

  In addition, the infrared detection element 30 of this embodiment is also accommodated in the vacuum vessel 2 and the infrared rays incident from the window 3 are incident, similarly to the conventional infrared detector shown in FIG. Further, the infrared detecting element 30 is also provided with a temperature control element 7 on the lower surface of the substrate 6, and temperature control similar to the conventional one is performed.

  In the infrared detection element 30 of the present embodiment, an absorption film 33 that absorbs infrared rays is provided in the lowermost layer in both the infrared detection unit 31 and the beam portions 32a and 32b. The absorption film 33 is formed of a silicon nitride film or the like, and absorbs infrared energy to generate heat. In the infrared detector 31, rectangular bolometer thin films 34 in three plan views are formed on the absorption film 33 so as to be arranged in parallel with each other with a slight gap therebetween. An electrode 35a is formed so as to be in contact with one end in the longitudinal direction of the left bolometer thin film 34 shown in the figure. The other end of the left bolometer thin film 34 and the center bolometer thin film 34 are In any case, the electrodes 35b are in contact with each other and are commonly connected by the electrodes 35b. An electrode 35c is in contact with one end of the central bolometer thin film 34 and the right bolometer thin film 34, and is connected in common by the electrode 35c, and the other end of the right bolometer thin film 34 is connected. An electrode 35d is formed so as to be in contact with. Three bolometer thin films 34 are connected in series by these electrodes 35a, 35b, 35c, and 35d. The electrodes 35a and 35d at both ends of the series connection body are led out to the outside by leads 36a and 36b formed on the beam portions 32a and 32b, respectively. In the beam portions 32a and 32b, contacts 39 and 40 connected to wirings (not shown) provided on the semiconductor substrate 6 are provided at the tip portions thereof, and the leads 36a and 36b are respectively connected to the contacts 39 and 40. Are connected to wirings on the substrate 6 through these wirings, and are connected to resistance value readout terminals 42 and 43 through these wirings, respectively. These terminals 42 and 43 are connected to an external readout circuit.

  On the other hand, the electrodes 35a and 35c connected to one end portions of the left bolometer thin film 34 and the center bolometer thin film 34 are connected by a switch 37a, and the electrode 37a and the electrode 35c are electrically connected by the switch 37a. Or it is cut off. The electrodes 35b and 35d connected to the other end portions of the center bolometer thin film 34 and the right bolometer thin film 34 are connected by a switch 37b, and the electrode 37b and the electrode 35d are electrically connected by the switch 37b. Or it is cut off. The switches 37a and 37b can be composed of, for example, MOS transistors, and the signal lines 38a and 38b are connected to the control terminals of the switches 37a and 37b, respectively. The signal lines 38a and 38b are beamed. The signal line 38c on the part 32b is commonly connected. The signal line 38 c is connected to the wiring formed on the semiconductor substrate 6 through the contact 41, and is connected to the switch signal terminal 44 through the wiring on the substrate 6. A switch switching signal is input to the switch signal terminal 44.

  The bolometer thin film 34 is generally made of a material having a large absolute value of TCR, such as titanium, vanadium oxide, yttrium barium copper oxide, or amorphous silicon. The bolometer-type infrared detector takes out a change ΔR in resistance value of the bolometer thin film 34 as an electrical signal by an external readout circuit, and detects infrared rays.

  Next, the operation of the infrared detecting element configured as described above will be described. In the state where the switches 37a and 37b are disconnected, as shown in FIG. 2A, the three bolometer thin films 34 are connected in series, and the resistance value of one bolometer thin film 34 is R. The total resistance value is 3R. Since the beams 32a and 32b have a function as a beam for supporting the infrared detector 31 in a hollow state, the infrared detector 31 is separated from the substrate 6 by the beams 32a and 32b and is held in a floating state. Therefore, it is difficult to be affected by the heat from the substrate 6. In this state, when infrared rays are incident on the infrared detector 31, the infrared energy is absorbed by the absorption film 33 and its temperature rises, and the temperature of the bolometer thin film 34 also rises. The bolometer thin film 34 has a characteristic that a change in resistance value due to a temperature change is large and a resistance temperature coefficient TCR is large. Therefore, the temperature change of the bolometer thin film 34 is detected as a resistance value change ΔR by an external resistance value reading circuit. The external circuit detects a temperature rise in the bolometer thin film 34 by detecting a resistance value of 3R + ΔR, thereby detecting the incidence and / or the amount of incident infrared rays.

  As described above, since the bolometer resistance value has a temperature characteristic, even when no infrared light is incident, if the heat of the semiconductor substrate flows in through the beam, the temperature of the bolometer changes, and thus the resistance value changes. . When the ambient temperature range in which the detector is used is narrow, it is possible to control the temperature of the infrared detection element so that the external control circuit can read the bolometer resistance value by the temperature control element 7. is there. However, when the bolometer type detector is used in a wide environmental temperature range, the temperature control element 6 is driven with high power or the scale of the readout circuit is increased if the connection state of the bolometer thin film 34 remains in the above-described series connection. Unless the bolometer resistance is designed to be detected in a wide resistance value range, the read resistance value exceeds the measurement range of the external circuit due to a large fluctuation (rise) of the environmental temperature.

  Therefore, in the present embodiment, when the environmental temperature rises and the total resistance value 3R of the serial connection body of the bolometer thin film 34 tries to exceed the measurement range of the external resistance value readout circuit, the switch signal terminal 44 The switching signal is transmitted to the switches 37a and 37b via the contact 41 and the signal lines 38c, 38a and 38b, and the switches 37a and 37b are switched to the connected state. Then, the electrode 35a and the electrode 35c are connected, the electrode 35b and the electrode 35d are connected, and finally, as shown in FIG. 2B, the three bolometer thin films 34 are connected in parallel. Thereby, the total resistance value of the bolometer thin film between the electrode 35a and the electrode 35d becomes R / 3. Therefore, although the resistance value of one bolometer thin film 34 is increased due to the increase of the environmental temperature, the total resistance value is decreased from 3R to R / 3, and the resistance value detected by the external resistance value reading circuit is Return to the measurement range. Therefore, the bolometer resistance value can be read out without increasing the capacity of the temperature control element 7 and increasing the scale of the readout circuit in spite of a large fluctuation (rise) in the environmental temperature. If the total resistance value R / 3 of the parallel connection body of the bolometer thin film 34 is within the readable range of the external circuit, the infrared ray is absorbed by the absorption film 33 to generate heat when the infrared ray is incident on the infrared detection unit 31. The external circuit can detect that the temperature of the bolometer thin film 34 has risen and the resistance value has increased, and can detect the incidence and / or amount of incident infrared rays.

  As described above, according to the present embodiment, infrared rays can be detected in a wide range of environmental temperatures with a simple operation by simply switching the switch. That is, even if the resistance value of the bolometer thin film does not correspond to the readout circuit due to fluctuations in the environmental temperature, the readout circuit can read the resistance value of the bolometer thin film only by switching the switch.

  Next, how much resistance value change occurs will be described. When infrared rays are incident on the bolometer thin film 34, the infrared rays are absorbed by the absorption film 33, the temperature of the bolometer thin film 34 having a diaphragm structure rises, the total resistance value of the bolometer thin film 34 changes, and is detected by the readout circuit. For example, assume that the bolometer resistance value when the temperature of the diaphragm is 25 ° C. is 150 kΩ, the TCR of the bolometer thin film is −4% / K, and the range of the bolometer resistance value that can be read by the readout circuit is 50 kΩ to 500 kΩ. Then, the resistance value Rb (= 3R) of the bolometer thin film is expressed by the following mathematical formula 1.

但し、Ｒｂ：ボロメータの抵抗値［Ω］
Ｒｂ_０：材料によって決まる物理定数（Ｒｂ_０は１とする）
α：抵抗値がＴ_ａ［Ｋ］のときの抵抗温度係数（ＴＣＲ）［％／Ｋ］
Ｔ：ボロメータ薄膜の温度［Ｋ］

Where Rb: Bolometer resistance [Ω]
Rb ₀ : Physical constant determined by the material (Rb ₀ is 1)
α: Temperature coefficient of resistance (TCR) [% / K] when the resistance value is T _a [K]
T: Temperature of bolometer thin film [K]

  At this time, when the temperature of the diaphragm becomes −30 ° C., the bolometer resistance Rb becomes Rb = about 2.7 MΩ by substituting α = −4% / K and T = 243K (−30 ° C.) in the equation (1). Become. Then, the bolometer resistance Rb exceeds the resistance value range that can be read by the readout circuit, and the resistance value cannot be read out. Therefore, when the resistance value changeover switches 37a and 37b are turned ON and the equivalent circuit of the bolometer resistance is changed as shown in FIG. 2B, the bolometer resistance value Rb becomes about 300 kΩ (= 2.7 MΩ ÷ 9), and the readout circuit Can read out the bolometer resistance.

  Next, a second embodiment of the present invention will be described with reference to FIG. 3, the same components as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted. In the present embodiment, the changeover switches 51a and 51b are formed on the semiconductor substrate 6 instead of on the diaphragm. Of the electrodes 35a, 35b, 35c, and 35d provided at both ends of the three bolometer thin films 34 of the infrared detector 31, the electrode 35a is connected to the tip of the beam 32a via a lead 36a formed on the beam 32a. The electrode 35c is led to a contact 39b provided at the tip of the beam portion 32a through a lead 36c formed on the beam portion 32a. On the other hand, the electrode 35d is led out to a contact 40a provided at the tip of the beam portion 32b via a lead 36b formed on the beam portion 32b, and the electrode 35b is connected to the beam via a lead 36d formed on the beam portion 32b. The contact 40b provided at the tip of the portion 32b is led out. Switches 51a and 51b are formed on the semiconductor substrate 6, and the contacts 39a and 39b are connected to a pair of terminals of the switch 51a via wiring (not shown) formed on the semiconductor substrate 6. The contacts 40a and 40b are connected to a pair of terminals of the switch 51b through wiring (not shown) formed on the semiconductor substrate 6. A switch switching signal is input to the control terminals 52a and 52b of the switches 51a and 51b. Further, the contact 39a is connected to a resistance value reading terminal 42 via a wiring (not shown) formed on the substrate 6, and the contact 40a is a resistance value reading via a wiring (not shown) formed on the substrate 6. It is connected to the terminal 43.

  Also in the present embodiment, when the switch switching signal controls the switches 51a and 51b to be in a disconnected state, the three bolometer thin films 34 are provided between the resistance value reading terminal 42 and the terminal 43 and the electrodes 35a and 35b. , 35c, 35d are connected directly. As a result, the resistance value readout circuit detects the 3R bolometer resistance Rb. On the other hand, when the switch switching signal switches the switches 51a and 51b to the connected state, the electrode 35a and the electrode 35c are connected via the leads 36a and 36c, and the electrode 35b and the electrode 35d are connected via the leads 36b and 36d. Since they are connected, the three bolometer thin films 34 are connected in parallel. For this reason, three bolometer thin films 34 connected in parallel are connected between the resistance value readout terminal 42 and the terminal 43, and the R / 3 bolometer resistance Rb is detected. Therefore, this embodiment also has the same effect as the first embodiment.

  Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a diagram showing an equivalent circuit of the present embodiment. In the present embodiment, N (N is four or more) bolometer thin films are arranged, and the electrodes provided at both ends of the bolometer thin film, as in the embodiments shown in FIGS. Adjacent ones are connected to alternate one end and the other end of the bolometer thin film. Thereby, all the bolometer thin films are connected in series by the electrode. Also in this embodiment, among the adjacent electrodes, those not connected are connected by a switch.

  Therefore, in this embodiment, when all the switches are in the disconnected state, as shown in FIG. 4A, since N bolometer thin films are connected in series, the bolometer resistance is NR. On the other hand, when all the switches are connected, N bolometer thin films are connected in parallel, so that the bolometer resistance is R / N.

  Thus, the number of bolometer thin films is not limited to three and can be variously set. Further, the control of the switches is not limited to the case where all the switches are connected, and some switches may be selectively connected. For example, in the infrared detection element 30 of FIG. 1, when only the switch 37a is connected, only the right-hand bolometer thin film 34 shown in the figure is connected between the resistance value readout terminals 42 and 43, resulting in a bolometer resistance wave R. Therefore, in the embodiment of FIG. 1, the connection state can be controlled so that two bolometer resistance values of 3R, R, and R / 3 are obtained.

It is a top view which shows the infrared rays detection element which concerns on 1st Embodiment of this invention. It is the equivalent circuit. It is a top view which shows the infrared rays detection element which concerns on 2nd Embodiment of this invention. It is an equivalent circuit diagram which shows the infrared rays detection element which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows the structure of an infrared detector. It is a top view which shows the conventional infrared rays detection element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Infrared detector 2 Vacuum container 3 Window 4 External connection terminal 5 Infrared detection element 6 Semiconductor substrate 7 Temperature control element 8 Bolometer thin film 9 Electrode lead 10 Infrared detection part 11 Absorption film 12 Beam part 14 Resistance value reading terminal 15 Electrode 30 Infrared Sensing element 31 Infrared detector 32a, 32b Beam 33 Absorbing film 34 Bolometer thin film 35a-35d Electrode 36a-36d Lead 37a, 37b Switch 38a, 38b, 38c Signal line 39, 40, 41, 39a, 39b, 40a, 40b Contact 42, 43 Resistance value reading terminal 44 Switch signal terminal 51a, 51b Switch 52a Switch signal terminal

Claims (7)

A substrate, an infrared detection unit, and a beam unit that supports the infrared detection unit so as to be separated from the substrate, and the infrared detection unit has a rectangular shape in plan view and is spaced apart from each other in parallel A plurality of bolometer thin films arranged in series and a plurality of bolometer thin films connected in series so that currents flowing in adjacent bolometer thin films are provided in contact with the respective end portions of the bolometer thin films and flow in different directions. The beam portion has a lead portion connected to an electrode provided on a bolometer thin film that becomes a start end portion and a terminal end portion of the serial connection body of the bolometer thin film when the switch is in a disconnected state. And a plurality of switches for switching between adjacent electrodes to a connected or disconnected state. 2. The bolometer-type infrared detection element according to claim 1, wherein the infrared detection unit is provided with an absorption film that absorbs infrared rays, and the bolometer thin film is formed on the absorption film. 3. The bolometer according to claim 1, wherein the switch is provided in the infrared detection unit, and a signal line unit that supplies a switching signal to the switch is formed in the beam unit. 4. Type infrared detector. The switch is provided on a substrate, and the beam portion is formed with another lead portion connected to an electrode other than the electrode connected to the lead portion, and the switch, the lead portion, and the other The bolometer-type infrared detection element according to claim 1, wherein the bolometer-type infrared detection element is connected to the lead portion via a wiring provided on the substrate. The base end portion of the beam portion supports the infrared detection unit, and the distal end portion of the beam portion is supported by the substrate. Bolometer type infrared detector. The bolometer-type infrared detection element according to claim 5, wherein a contact connected to a wiring provided on the substrate is formed at a distal end portion of the beam portion. The infrared container according to any one of claims 1 to 6, wherein the infrared container is provided with a window through which infrared rays are transmitted, a temperature control element provided in the container, and the temperature control element. An infrared detector comprising: a detection element; and an external connection terminal provided on a wall of the container for transmitting and receiving a signal to and from the infrared detection element.

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