JP2007027472A - Device incorporating component and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device incorporating components capable of arranging a via to easily penetrate both sides of a semiconductor IC chip in a dry process and incorporating even an electronic component other than a semiconductor, and to provide its manufacturing method. <P>SOLUTION: The method is the one for manufacturing an electronic device where component chips 101 are embedded inside a substrate 103 made of an insulation resin and which is the device incorporating the components. A first through-hole 102 penetrating the both sides of the component chip 101 is arranged at least in one component chip 101; a second through-hole 104 penetrating the both sides of the substrate 103 passes through the first through-hole 102, and is arranged at a position not to contact the inner surface of the first through-hole 102 in the substrate 103; and electric circuit conductive bodies 106, 107 arranged on the both sides of the substrate 103 are conductively connected by a conductive body 108 which is disposed in the second through-hole 104. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a device incorporating an electronic component such as a semiconductor, and more particularly to a component-embedded device in which front and back sides of a component chip having a through hole are electrically connected and a method for manufacturing the device.

  2. Description of the Related Art In recent years, with the increase in the size and density of electronic equipment, development of a component-embedded device that incorporates a component in a circuit board has been carried out with the aim of reducing the size of the electronic component. For example, there are those that incorporate resistors, coils, capacitors, etc. in the substrate, and others that incorporate semi-conductor ICs. Also in the semi-conductor IC chip package, in order to reduce the chip mounting area, three-dimensional mounting in which two or three semi-conductor IC chips are stacked is adopted, and it is also frequently used for mobile phones and the like. It has been. On the other hand, there is a limit to the integration within the semi-conductor IC chip, and the development time of a large-scale semi-conductor IC chip (VLSI chip) is prolonged, and the mask cost and the equipment cost increase. For this reason, it has become difficult to fit a large-scale circuit into one chip.

Against this background, the need for so-called three-dimensional mounting in which a plurality of semi-conductor IC chips are stacked to reduce the floor area has increased, and development has been promoted widely. When the semiconductive IC chip is three-dimensionally incorporated in the circuit board, efficient wiring can be realized if via bonding that penetrates the front and back surfaces of the semiconductive IC chip is possible. In order to perform this via bonding, for example, a hole is dug from the surface of the semi-conductor IC chip, the inner wall surface of the hole is treated with an insulating film, and then plated copper is filled therein, and the plated copper appears from the back side. A technology has been developed in which the electrical signal can be taken out from the back side of the chip. (For example, refer nonpatent literature 1.)
Kenji.Takahashi, et al "Process Integration of 3D Chip Stack with Vertical Interconnection" Proceedings of 2004 Electronic Components and Technology Conference, P601-609 (2004)

  However, the via that electrically penetrates the front and back surfaces of the semiconductive IC chip as described in Non-Patent Document 1 is formed through processes such as photolithography, plating process, and generation of an oxide insulating film. There is a problem that the process is long and the manufacturing cost is high. In addition, since water is used in this process, problems such as waste liquid treatment also occur.

  Therefore, the object of the present invention is to solve the above problems, and to provide vias penetrating the front and back surfaces of the semiconductive IC chip in a dry process, and also to provide electronic components other than the semiconductor. An object of the present invention is to provide a component built-in device that can be built in, and a method for manufacturing the device.

  In order to achieve the above object, an electronic device in which a component chip is embedded in a substrate made of an insulating resin as a component-embedded device according to the present invention, wherein at least one of the component chips includes the component chip. A first through hole penetrating the front and back surfaces of the substrate is provided, and a second through hole penetrating the front and back surfaces of the substrate passes through the first through hole and the first through hole is formed on the substrate. A component built-in device that is provided at a position not in contact with the inner surface and in which electrical circuit conductors provided on the front and back surfaces of the substrate are connected to be conductive by the conductor provided in the second through hole is conceivable. .

  In this embodiment, any number of component chips can be embedded in the substrate, and other electronic components can be embedded in the substrate. In addition, it is conceivable to provide the first through holes in all the component chips among the component chips built in the substrate, and it is also conceivable to provide the first through holes only in some of the component chips. .

  Here, the “front and back surfaces” of the substrate or component chip are any two opposing surfaces of the surfaces constituting the substrate or component chip. For example, if the substrate or component chip is a flat plate shape, , That wide side is considered. Connection points for forming an electric circuit or electrically connecting with other members can be provided on the front and back surfaces. However, the front and back surfaces are not limited to a wide surface, and any two opposing surfaces can be used as the front and back surfaces depending on the shape and application of the substrate or component chip.

The first through hole can be provided with an arbitrary number of through holes in one component chip, and the second through hole has an arbitrary number of through holes according to the number of the first through holes. Can be provided. Moreover, about the cross-sectional shape of these 1st through-holes and 2nd through-holes, it can have a cross section of all shapes including circular, an ellipse, and a rectangle. Further, “the second through hole is provided at a position passing through the first through hole and not in contact with the inner surface of the first through hole” means that the outer shape of the second through hole and the first through hole It means that there is an insulating resin between the inner walls of the hole, and electrical insulation is ensured between the conductor provided in the second through hole and the component chip. Become.

  According to this embodiment, the conductor can be passed through the component chip while maintaining the insulation with the component chip, which is very effective for forming a three-dimensional module or package. .

  As the component built-in device according to the present invention, a component built-in device in which the electric circuit conductor and the electrode of the component chip are electrically connected can be considered. In the device of the present invention, the conductor and the inner wall of the first through hole of the component chip are electrically insulated, but in this embodiment, the electric circuit conductor and the electrode provided on the component chip By electrically connecting the two, the terminal points of the component chip can be easily provided on the front and back surfaces of the substrate of the component built-in device.

  As the component built-in device according to the present invention, the first through hole has a substantially circular cross-sectional shape, and the second through hole has a substantially circular cross-sectional shape and is substantially concentric with the first through hole. A device with a built-in component is conceivable. According to this embodiment, the processing of the first through hole and the second through hole can be easily formed at low cost.

  Further, as the component built-in device according to the present invention, a component built-in device in which the component chip is a semiconductive IC chip is conceivable.

  Further, as the component built-in device according to the present invention, a component built-in device in which the edge resin is a material capable of laser processing and a component built-in device in which the insulating resin is a photosensitive resin can be considered.

  Further, as the component built-in device according to the present invention, a component built-in device in which the conductor is a conductive paste, and a component built-in device in which the conductor is plated copper are conceivable.

  Further, as the component-embedded device according to the present invention, a component-embedded device in which an electric circuit conductor is made of a conductive paste embedded in a groove provided on the front surface and / or the back surface of the substrate can be considered.

  Furthermore, as a multilayer component-embedded device according to the present invention, a multilayer component-embedded device including at least one of the above-described component-embedded devices and having multilayer wiring layers stacked on top and bottom of the component-embedded device can be considered. According to this embodiment, it is possible to easily manufacture a multilayer component-embedded device with a small number of manufacturing steps and a low manufacturing cost.

  Further, as the multi-sided I / O package according to the present invention, a double-sided I / O package formed by providing an electrode pad on an electric circuit conductor provided in the above-described component-embedded device is conceivable. Further, as the multi-sided I / O package according to the present invention, a double-sided I / O package in which electrode pads provided on the front and back surfaces of the substrate are arranged in the same arrangement on the front and back surfaces can be considered. These I / O packages are very effective for three-dimensional mounting.

  Furthermore, as a method for producing a component-embedded device according to the present invention, a member including at least a component chip having a first through hole penetrating the front and back surfaces of the component chip in the component chip, and the component chip having the first through hole Are embedded with an insulating resin to form a substrate, and a second through hole penetrating the front and back surfaces of the substrate is passed through the first through hole and the first through hole is formed in the substrate. A component including a step of not being in contact with the inner surface, and a step of providing a conductor in the second through hole and providing an electric circuit conductor on the front and back surfaces of the substrate so as to be electrically connected to the conductor. A method of manufacturing a built-in device is conceivable.

  According to this embodiment, it is possible to manufacture a device with a built-in component in a short time and at a low cost with fewer manufacturing steps than in the past. Furthermore, it does not include a process for producing waste liquid such as a photolithography process, which is advantageous for environmental conservation.

  In the component built-in device according to the present invention, a conductor penetrating a component chip such as a semi-conductor IC chip can be easily provided at low cost while ensuring insulation, so that it can be provided in a three-dimensional module or package. Is very effective, and it is possible to easily reduce the size of the device and further reduce the size and cost of the system apparatus.

  In addition, since the manufacturing of the component built-in device according to the present invention does not include a step of producing a waste liquid such as a photolithography step, a clean manufacturing process suitable for environmental protection can be realized.

  Embodiments according to the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
One embodiment of a component built-in device according to the present invention is shown in FIG. This figure is a sectional view showing a component built-in device in which a through-via is provided in a semiconductive IC chip (component chip).

The semiconductive IC chip 101 is provided with a first through hole 102 penetrating the front and back surfaces thereof. Here, the lower surface in the drawing is referred to as the front surface, and the upper surface is referred to as the back surface. The semiconductive IC chip 101 with the first through hole 102 is embedded in a substrate 103 made of an insulating resin. In addition, the second through hole 104 penetrating the front and back surfaces of the substrate 103 is positioned so as to be substantially concentric with the first through hole 102 so that the inner wall of the first through hole 102 is not touched. That is, it is opened so as not to touch the semiconductive IC chip 101. Therefore, an insulating resin exists between the outer shape of the second through hole 104 and the inner wall of the first through hole 102. Here, also in the case of the substrate 103, as in the case of the semiconductive IC chip 101, the lower surface in the drawing is referred to as the front surface, and the upper surface is referred to as the back surface. In this figure, the semiconductive IC chip 101 is provided with three first through holes 102, and a second through hole 104 is provided in each of the first through holes 102.

  A conductor 107 is provided in the second through hole 104 located on the left and right of the substrate 103, and both ends of the conductor 107 reach the front and back surfaces of the substrate 103. Further, an electric circuit conductor 106 is provided on the front surface of the substrate 103, and an electric circuit conductor 108 is provided on the back surface of the substrate 103, and these electric circuit conductors 106, 108 are electrically connected by the conductor 107. Connected.

  Further, a contact window 113 is opened on the surface of the substrate 103 at the position of the I / O electrode pad 105 (electrode) of the semiconductive IC chip 101. Through this contact window 113, the I / O electrode pad 105 and the electric circuit conductor 106 are electrically connected. The internal structure of the semiconductive IC chip 101 is not shown in this drawing.

  On the other hand, a conductor 112 is provided in the second through hole 104 located at the center of the substrate 103, and both ends of the conductor 112 reach the front and back surfaces of the substrate 103. In addition, an electric circuit conductor 110 is provided on the front surface of the substrate 103, and an electric circuit conductor 111 is provided on the back surface of the substrate 103. These electric circuit conductors 110 and 111 are electrically connected by the conductor 112. Connected. However, the electric circuit conductors 110 and 111 connected by the conductor 112 are independent of the semiconductor IC chip 101, unlike the electric circuit conductors 106 and 108 described above.

  As described above, if through vias constituted by the electric circuit conductors 106 and 108 and the conductor 107 are used, an I / O electrode pad is provided not only on the front surface of the semiconductive IC chip 101 but also on the back surface side. Can do. Therefore, when a semiconductive IC chip and other components are stacked on the back surface, conventionally, in order to connect the I / O electrode pad and the back surface wiring, the wiring is made around the outside of the semiconductive IC chip. However, in this embodiment, there is no need to perform such complicated wiring. In addition, the wiring length is shortened accordingly.

  In addition, if an independent through via constituted by the electric circuit conductors 110 and 111 and the conductor 112 is used, wiring can be made through a substrate or a semiconductor IC chip, which has a great advantage in three-dimensional mounting.

(Manufacturing process of component built-in device)
Next, an example of a manufacturing process of the component built-in device shown in FIG. 1 will be described. First, when the first through hole 102 is formed in the semiconductor IC chip 101, the hole can be accurately formed by a semiconductor processing technique such as ion etching or plasma etching. Recently, drilling with a laser or the like is also possible.

  According to ion etching, it is possible to process a through hole having a high aspect ratio, that is, deeper than the diameter. For example, a hole having a diameter of 10 μφ and a depth of 70 μ can be formed. However, in recent years, the thickness of semiconductor IC chips has been processed to be thin. For example, semiconductor IC chips having a thickness of about 50 μm have started to be used, and the drilling process itself has become easier. .

  In addition, when a large hole diameter of 150 μm or more may be used, sand blasting can be used in which sand is hit against the workpiece. In recent years, fine processing has become possible even with this technique, and when there is no problem with the slight taper shape, it can be used as an inexpensive drilling method.

Next, the semiconductive IC chip 10 having the first through hole 102 formed as described above.
1 is embedded in a substrate 103 made of an insulating resin. There are several methods for embedding in the insulating resin substrate 103. If a smooth finished surface is required, two semi-cured (B-stage) resin sheets are used for the first. Semiconductor IC having through hole 102
A method in which the chip 101 is sandwiched and heated under pressure is suitable. In this case, it is preferable to perform this treatment in a vacuum in order to prevent a void from being formed inside the through hole. As another method, there is a method in which a semiconductive IC chip 101 having a first through hole 102 is placed on an insulator sheet, and a liquid resin is poured and cured to be embedded.

Next, the semiconductive IC chip 10 having the first through hole 102 formed as described above.
A second through hole 104 is formed in the substrate 103 embedded with 1 so as to be substantially concentric with the first through hole 102 so as not to touch the semiconductive IC chip 101. A step of opening the contact window 113 at the position of the I / O electrode pad 105 is performed.

  The through hole may be opened by a mechanical drill, but laser processing is preferable in consideration of processing of the contact window 113. In the case of a fine through hole, an excimer laser or a hemto laser is suitable. As for what kind of laser should be selected, it is desirable to select a method with the lowest manufacturing cost in accordance with the allowable fineness of processing and the shape of the finished hole.

  Processing of the resin by the laser varies greatly depending on the resin material. When an organic resin is used alone, drilling can be performed with most lasers such as a carbon dioxide laser, YAG laser, and excimer laser. In addition, when an inorganic filler such as silica is mixed in the resin, the processability is deteriorated, but it is also possible to use a composite material mixed with a filler in order to improve moisture resistance and the like. If a photosensitive resin is selected as the insulating resin, a through hole can be formed by exposure and development.

  As in the prior art, when insulating properties are ensured by the oxide film treatment, the insulating properties are greatly affected by the hole surface and the hole shape, and thus there is a problem that the yield of the product is deteriorated. There is a great advantage that a good insulating property can be obtained regardless of the hole surface and hole shape.

  Next, the conductor 107 is provided in the second through hole 104 opened as described above. In order to provide the conductor 107, it is possible to embed a conductor, or the conductor may be attached to the inner wall surface of the second through hole 104. When embedding a conductor, the conductive paste may be pushed in with a squeegee or the like, and screen printing is possible when the hole is large. When embedding a conductive paste as the conductor 107 by screen printing, it is efficient to print the electric circuit conductors 106 and 108 at the same time. Of course, printing may be performed after the hole is once filled with the conductive paste.

  Further, the electric circuit conductors 106 and 108 may be hardened after filling with a conductive paste and then wired with plated copper. For such a technique, a technique of a printed wiring board can be applied. Instead of embedding the conductor 107, the inner wall surface of the second through-hole 104 can be plated with copper so that the circuit conductors 106 and 108 on the front and back sides can be electrically connected. This is also a technique that has long been known in the art of printed wiring boards, and a detailed description thereof will be omitted.

(Embodiment 2)
FIG. 2 shows an embodiment in which circuit conductors and conductors are formed of plated copper. The conductor 201 is made of plated copper applied to the inner wall surface of the second through hole 104, and the inside thereof is a cavity 202. The electric circuit conductors 106 and 108 are also formed of plated copper, and the connection with the I / O electrode pad 105 of the semiconductive IC chip 101 is also made of plated copper. The I / O electrode pad 105 is usually made of aluminum, but in this case, it is known that the surface is converted with a metal such as chromium, titanium or tungsten, and finally the surface is made of copper or gold. It has been. This is to obtain an ohmic electrical contact.

  When the circuit conductors 106 and 108 are plated copper, they can be directly soldered to a printed circuit board or the like. In addition, when a conductive paste is used, solder connection is difficult, but electrical connection is possible by plating or overcoating a conductive paste that can be soldered. When electrical connection to the printed circuit board is performed using a conductive paste without using solder, there is no need to perform any treatment with the conductive paste. In order to improve the contact between the conductive pastes, it is preferable to perform plasma treatment.

(Embodiment 3)
In order to form the electric circuit conductor, the conductive paste can be embedded in the groove instead of printing. In this case, since the electric circuit conductors 106 and 108 can be formed simultaneously with embedding the conductive paste in the second through hole 104, the process is remarkably simplified.

  Another embodiment of a component built-in device according to the present invention is shown in FIG. This figure shows a cross-sectional view of a component built-in device in which an electric circuit conductor is formed by embedding a conductive paste in a groove. Here, after the semiconductive IC chip 301 having the first through hole 302 is embedded in the substrate 304 made of an insulating resin, the semiconductive IC chip 301 is substantially concentric with the first through hole 302. A second through hole 305 is formed at a position where the contact hole 306 is not touched, and a contact window 306 is formed at a position of the I / O electrode pad 303. Further, grooves 307 and 308 are carved on the front and back surfaces of the substrate 304 according to the circuit pattern. Then, the conductive paste 309 is embedded in the engraved grooves 307 and 308, the contact window 306, and the second through-hole 305, and then cured by heating. Through the above steps, the electric circuit conductor (wiring) and the conductive via can be formed simultaneously.

(Embodiment 4)
As described above, according to the present invention, a plurality of semiconductive IC chips embedded in the same substrate, or a component built-in device in which electronic components other than the semiconductive IC chip are connected to each other are formed. Can do. In addition, a multilayer component built-in device in which such component built-in devices are stacked in multiple layers can also be formed.

Here, FIG. 4 shows a cross-sectional view of a multilayer component built-in device according to another embodiment of the present invention. In the present embodiment, a component chip built-in layer 404 containing a component chip 405 is superimposed on the component built-in device 401 containing the semiconductive IC chip 402 having the first through hole (on the back side), and the lower side ( An electric circuit conductor layer 403 not including a component chip is overlaid on the front surface side. The component built-in device 401 is the same as that already described.

  The component chip built-in layer 404 has a structure in which a component chip 405 having no through hole is embedded in an insulating resin and wired with a conductive paste 407 filled in the through hole and the groove on the surface. Here, the member indicated by the part number 406 is an electrode of a part chip. The electrical circuit conductor 415 of the component built-in device 401 and the electrical circuit conductor 414 of the component chip built-in layer 404 are electrically connected at a connection point 408. A member indicated by a part number 409 is an electric circuit conductor made of a conductive paste embedded in a through hole and a groove carved on the surface. The lower electric circuit conductor layer 403 has a structure having only the electric circuit conductor 410 made of a conductive paste filled in the through hole and the groove carved on the surface.

Such a multilayered component built-in device having a three-layer structure is effective for obtaining a small functional module. In addition, a conventional component can be surface-mounted on the surface of the multilayer component-embedded device. In FIG. 4, the state of flip mounting is indicated by broken lines (part number 411). It is also possible to overlap a wiring layer made of a component built-in device or an electric circuit conductor on both surfaces of such a multilayer component built-in device.

(Manufacturing process of multi-component embedded device)
Next, an example of a manufacturing process of such a multilayer component built-in device will be described. The manufacturing process of the single-layer component built-in device 401 has already been described. In order to laminate the component chip built-in layer 404, the component chip 405 is sandwiched between B-stage insulating resins, stacked on the component built-in device 401, and heated by pressure to cure the insulating resin, and the substrate 416 is formed. Can be formed. Machining, plasma processing, laser processing, or the like can be used for through-hole processing or groove processing to be applied to the insulating resin, and an optimal processing means can be selected depending on required dimensional accuracy.

  In this embodiment, a case where laser processing is used will be described as an example. As the laser processing, it is particularly preferable to use an excimer laser with little residue after processing. A groove 413, a through hole 414, and a contact window 412 are formed in a substrate 416 made of an insulating resin using a laser. The through hole 414 passes through the substrate 416 and is stopped at the position of the electric circuit conductor 415 of the component built-in device 401. However, in order to improve electrical connection, it is preferable to dig into the electric circuit conductor 415 until it slightly enters. In order to fill the conductive paste so that bubbles do not enter, it is preferable to fill in a vacuum. Specifically, a method of removing the conductive paste on the surface by pushing with a squeegee in a vacuum or dipping into a conductive paste reservoir and taking it up in the atmosphere can be considered.

Next, in order to form the lower electric circuit conductor layer 403, a B-stage insulating resin is stacked and heated and pressurized and cured to form a substrate 417, and a through hole (through only the substrate 417, A hole that stops at the position of the electric circuit conductor on the built-in device 401) and a groove may be formed with a laser, and a conductive paste may be further filled and heat cured. Further, before digging a through hole or groove, the upper component chip built-in layer 404 and the lower electric circuit conductor layer 403 can be laminated and simultaneously formed by heating and heating at the same time.

  In this embodiment, the B-stage uncured resin has been described. However, a method of using an insulating resin layer in which a component chip is embedded and cured, or a method of stacking a cured resin layer with an adhesive is adopted. You can also. Since the subsequent steps are the same as described above, description thereof will be omitted.

  In the above description, the layers are sequentially stacked. However, batch stacking is also conceivable. In this case, each layer can be electrically connected using an anisotropic conductive adhesive or a conductive adhesive. However, in view of the quality of the laminate, the sequential laminate type is preferable. Devices such as the present invention are generally very thin (100 μm or less), and alignment during lamination is difficult due to the elongation of the device. In the case of the sequential laminated type, it is possible to perform processing while looking at the lower pattern in through-hole drilling or grooving, so that alignment work is not required. Accordingly, since there is no need for via land or the like that covers the misalignment between layers, finer vias and wiring can be realized. In the above description, a conductive paste is used as the conductor. However, as already described, plated copper can also be used.

(Embodiment 5)
As a special case of the multilayer component-embedded device already described, a double-sided I / O package having a structure as shown in FIG. 5 can be considered. This double-sided I / O package is an effective package for three-dimensional mounting, and is particularly effective for stacked large-capacity memory modules.

Here, the component built-in device 501 and the electric wiring conductor layers 502 and 503 are the same as those described in the fourth embodiment. The feature of this embodiment is that it has I / O pads 504 and 505 aligned on the front and back surfaces of the multilayer module. In FIG. 5, the arrangement of the I / O pads is the same on the back surface, but may be different. Also, in complex devices, there may be a need for additional electrical circuit conductor layers. On the contrary, in a simple device, as shown in the component built-in device in FIG. 5, there is a case where a double-sided I / O package can be realized without overlapping the electric circuit conductor layers 502 and 503 by itself. Further, a connection ball (such as a solder ball) can be attached to the double-sided or single-sided pad. At this time, when the surfaces of the I / O pads 504 and 505 are plated copper, all of them can be soldered. However, in the case of a conductive paste, it is necessary to perform plating or paste a copper foil. .

(Other embodiments)
As described above, the present invention has been described with reference to various embodiments and examples, but many other modifications and special shapes are included in the present invention. That is, the component chip having the first through hole is embedded in the insulating resin, and the second chip is not touched in the first through hole.
Any other embodiment is applicable to the present invention as long as it is a device and a method of manufacturing the same in which the second through hole is provided with a conductor and the electrical circuit conductor on the front and back surfaces is made conductive. included.

It is sectional drawing which shows Embodiment 1 of the component built-in device which concerns on this invention. It is sectional drawing which shows Embodiment 2 of the component built-in device which concerns on this invention. It is sectional drawing which shows Embodiment 3 of the component built-in device which concerns on this invention. It is sectional drawing which shows Embodiment 4 which is a multilayer built-in device which concerns on this invention. It is sectional drawing which shows Embodiment 5 which is a double-sided I / O package based on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Semiconductor IC chip which has 1st through-hole 102 1st through-hole 103 Board | substrate which consists of insulating resin 104 2nd through-hole 105 I / O electrode pad 106 Electric circuit conductor 107 Electric conductor 108 Electric circuit electric conduction Body 110 Electrical circuit conductor 111 Electrical circuit conductor 112 Conductor 113 Contact window 201 Conductor 202 Cavity 301 Semiconductor IC chip 302 First through hole 303 I / O electrode pad 304 Substrate 305 Second through hole 306 Contact window 307 Groove 308 groove 309 conductive paste 401 component built-in device 402 semiconductor IC chip 403 electric circuit conductor layer 404 component chip built-in layer 405 component chip 406 electrode 407 conductive paste 408 connection point 409 electric circuit conductor 410 semiconductor IC chip 411 flip-flop 412 contact window 413 groove 414 through hole 415 Electrical conductor 416 substrate 417 substrate 501 component embedded device 502 electrical circuit conductor layer 503 Electrical conductor layer 504 I / O pads 505 I / O pads

Claims (13)

An electronic device in which a component chip is embedded inside a substrate made of an insulating resin,
At least one of the component chips is provided with a first through hole that penetrates the front and back surfaces of the component chip.
In the substrate, a second through hole penetrating the front and back surfaces of the substrate is provided at a position passing through the first through hole and not in contact with the inner surface of the first through hole,
The component-embedded device, wherein electrical circuit conductors provided on the front and back surfaces of the substrate are connected to be conductive by a conductor provided in the second through hole.   The component built-in device according to claim 1, wherein the electric circuit conductor and the electrode of the component chip are electrically connected.   The first through-hole has a substantially circular cross-sectional shape, and the second through-hole has a substantially circular cross-sectional shape and is arranged concentrically with the first through-hole. The device with a built-in component according to claim 1 or 2.   The component built-in device according to claim 1, wherein the component chip is a semiconductive IC chip.   The component built-in device according to claim 1, wherein the insulating resin is a material that can be laser processed. The component built-in device according to claim 1, wherein the insulating resin is a photosensitive resin. The component built-in device according to claim 1, wherein the conductor is a conductive paste.   7. The component built-in device according to claim 1, wherein the conductor is plated copper.   9. The component built-in according to claim 1, wherein the electric circuit conductor is made of a conductive paste embedded in a groove provided on a front surface and / or a back surface of the substrate. device. A multilayer component-embedded device comprising at least one component-embedded device according to any one of claims 1 to 9, wherein a multilayer wiring layer is stacked above and below the component-embedded device.   A double-sided I / O package formed by providing an electrode pad on the electric circuit conductor provided in the component-embedded device according to any one of claims 1 to 9.   The double-sided I / O package according to claim 11, wherein the electrode pads provided on the front and back surfaces of the substrate are aligned in the same arrangement on the front and back surfaces. A step of making a first through hole penetrating the front and back surfaces of the component chip in the component chip;
A step of forming a substrate by embedding a member including at least the component chip having the first through hole with an insulating resin;
A second through hole penetrating the substrate through the front and back surfaces of the substrate passes through the first through hole,
And a step of not being in contact with the inner surface of the first through hole;
Providing a conductor in the second through hole and providing an electric circuit conductor on the front and back surfaces of the substrate so as to be electrically connected to the conductor;
A method of manufacturing a device with a built-in component, comprising:

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