JP2007009309A - Film deposition method, and film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition system where the restriction of cleaning conditions by plasma irradiation can be relaxed in a physical deposition process. <P>SOLUTION: The film deposition system 1a is equipped with: a vacuum vessel 10; a plasma gun 4 of emitting a plasma beam P to the inside of a film deposition chamber 10b in the vacuum vessel 10; a main anode mechanism 2 provided in the film deposition chamber 10b and sucking the plasma beam P to a prescribed position C in the film deposition chamber 10b; and a carrying mechanism 3 of supporting a work 5. The main anode mechanism 2 comprises: a main anode member 21 for cleaning used for cleaning the work 5; a main anode member 22 for film deposition holding a film deposition material Ma and used for film deposition; and a transferring mechanism 2a of transferring the main anode members 21 and 22 to the prescribed position C in order. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming method and a film forming apparatus.

  As a method for forming a film forming material on the surface of the object to be processed, for example, physical vapor deposition is known. The physical vapor deposition method is a method in which a film forming material is vaporized in a vacuum vessel, and the diffused film forming material is attached to the surface of an object to be processed. In such a film formation method, minute impurities adsorbed on the surface of the object to be processed are removed (cleaned) before film formation, thereby improving the adhesion of the film to the surface of the object to be processed and improving the film quality. Can be made. As a cleaning method, for example, there is a sputtering method in which ions collide with the surface of an object to be processed. For example, in the hard carbon film forming method disclosed in Patent Document 1, the substrate surface is cleaned by sputtering the substrate with plasma generated in a reaction chamber before film formation by chemical vapor deposition (CVD). Yes.

JP-A-4-304376

  However, in the physical vapor deposition method, the film forming material may be heated and vaporized by irradiating the main hearth with plasma while holding the film forming material on the main hearth (main anode). In such a case, if the same main hearth is used for cleaning the object to be processed, it is necessary to perform the cleaning under the condition that the film forming material in the main hearth does not vaporize. Will be.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a film forming method and a film forming apparatus that can alleviate restrictions on cleaning conditions due to plasma irradiation in physical vapor deposition.

  In order to solve the above-described problems, a film forming method according to the present invention irradiates plasma from a plasma gun, guides it to the first main anode, and cleans the surface of the workpiece by exposing the workpiece to the plasma. A film forming process on the surface of the object to be processed by vaporizing the film forming material by irradiating plasma to the second main anode side holding the film forming material and adhering the film forming material to the object to be processed And a film forming process for forming the film.

  In the film forming method described above, after the cleaning is performed using the first main anode, the film is formed using the second main anode holding the film forming material. As described above, the cleaning condition is not restricted by preparing the first main anode for cleaning separately from the second main anode for holding the film forming material and performing the cleaning using the first main anode. The cleaning can be performed under the optimum conditions for the object to be processed.

  Further, the film forming method is such that main anode replacement is performed in which the first main anode is removed between the cleaning process and the film forming process, and the second main anode is transferred to the position where the first main anode is installed. The method may further include a step. Accordingly, since the cleaning process and the film forming process can be performed in the same chamber of the vacuum container, the film forming apparatus used in this film forming method can be reduced in size.

  Further, the film forming method includes a cleaning chamber containing a first main anode and having a plasma gun, a film forming chamber juxtaposed with the cleaning chamber and containing a second main anode and having a plasma gun different from the plasma gun, and Using a vacuum container having a transfer chamber disposed over the cleaning chamber and the film formation chamber, and performing a cleaning process and a film formation process in each of the cleaning chamber and the film formation chamber while transferring an object to be processed in the transfer chamber. May be a feature. Thereby, since a cleaning process and a film-forming process can be performed while conveying a plurality of objects to be processed continuously, cleaning and film formation can be efficiently performed on a plurality of objects to be processed.

  In addition, the first film formation apparatus according to the present invention vaporizes the film formation material by irradiating the film formation material with plasma, and deposits the film formation material on the surface of the object to be processed. A membrane device comprising a vacuum vessel, a plasma gun that irradiates plasma into the vacuum vessel, and a main anode mechanism that is provided in the vacuum vessel and sucks plasma to a predetermined position in the vacuum vessel. The first main anode member for sucking the plasma, the second main anode member for sucking the plasma and holding the film forming material, and the first and second main anode members in order at a predetermined position. And a transfer mechanism for transferring to the head.

  The operation of the first film forming apparatus described above is as follows. First, the first main anode member is transferred to a predetermined position by the transfer mechanism. Then, plasma is irradiated from the plasma gun and guided to the first main anode member. Subsequently, when the workpiece is exposed to plasma, ion particles generated by the plasma sputter the surface of the workpiece, and the surface of the workpiece is cleaned. Thereafter, the second main anode member holding the film forming material is transferred to a predetermined position by the transfer mechanism. Subsequently, the film forming material is vaporized by irradiating plasma from the plasma gun to the second main anode member side. The vaporized film forming material adheres to the surface of the object to be processed in a film shape.

  According to the first film forming apparatus described above, after cleaning is performed using the first main anode member, film formation is performed using the second main anode member (that is, main hearth) holding the film forming material. It can be carried out. Thus, the cleaning main anode member (first main anode member) and the film forming main anode member (second main anode member) are provided, and cleaning is performed using the cleaning main anode member. As a result, the cleaning conditions are not restricted, so that cleaning can be performed under conditions optimal for the object to be processed.

  In addition, according to the first film forming apparatus described above, the cleaning process and the film forming process are performed in the same chamber of the vacuum vessel by providing the transfer mechanism that sequentially transfers the first and second main anode members to the predetermined position. Since it can be performed, the film forming apparatus can be downsized.

  Further, in the first film forming apparatus, the transfer mechanism mounts the first and second main anode members and sequentially moves the first and second main anode members downward from a predetermined position. And a main anode push-up member which is provided so as to be movable in the vertical direction below the predetermined position and pushes up the first or second main anode member moved below the predetermined position to the predetermined position. Also good. Thereby, the transfer mechanism which transfers the 1st and 2nd main anode member to a predetermined position in order can be realized suitably.

  Further, a second film forming apparatus according to the present invention is a film forming apparatus for forming a film by vaporizing a film forming material and attaching it to the surface of an object to be processed. And a vacuum container having a transfer chamber disposed over the cleaning chamber and the film formation chamber, a first plasma gun for irradiating plasma into the cleaning chamber, a cleaning chamber provided from the first plasma gun A first main anode for sucking plasma, a second plasma gun for irradiating the plasma into the film forming chamber, and a film forming chamber for sucking the plasma from the second plasma gun and holding the film forming material And a second main anode that is provided in the transfer chamber, supports the workpiece, and includes a transfer mechanism that transfers the workpiece from the cleaning chamber to the film formation chamber. That.

  The operation of the second film forming apparatus described above is as follows. First, in the cleaning chamber, plasma is irradiated from the first plasma gun and guided to the first main anode member. When the object to be processed in the transfer chamber is exposed to the plasma, ion particles generated by the plasma sputter the surface of the object to be processed, and the surface of the object to be processed is cleaned. Subsequently, the workpiece is transported from the cleaning chamber to the film forming chamber by the transport mechanism. Then, in the film formation chamber, the film formation material is vaporized by irradiating plasma from the second plasma gun to the second main anode member side. The vaporized film forming material adheres to the surface of the object to be processed in a film shape.

  According to the second film forming apparatus described above, after cleaning is performed in the cleaning chamber having the first main anode member, film formation is performed in the film forming chamber having the second main anode member holding the film forming material. It can be carried out. As described above, since cleaning and film formation are performed using a vacuum container having a vacuum chamber for cleaning (cleaning chamber) and a vacuum chamber for film formation (film formation chamber), the cleaning conditions are not restricted. Cleaning can be performed under the optimum conditions for the processed material.

  In addition, according to the second film forming apparatus described above, the cleaning process and the film forming process can be performed while continuously conveying a plurality of objects to be processed. Membrane can be performed efficiently.

  According to the film forming method and film forming apparatus of the present invention, it is possible to relax restrictions on cleaning conditions due to plasma irradiation in physical vapor deposition.

  Embodiments of a film forming method and a film forming apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.

(First embodiment)
FIG. 1 is a side sectional view showing a configuration of a first embodiment of a film forming apparatus according to the present invention. The film forming apparatus 1a of the present embodiment is a so-called ion plating apparatus, and is suitably used for the film forming method according to the present invention. In FIG. 1, an XYZ orthogonal coordinate system is also shown for ease of explanation.

  The film forming apparatus 1 a according to this embodiment includes a main anode mechanism 2, a transport mechanism 3, a plasma gun 4, an auxiliary anode 6, and a vacuum container 10.

  The vacuum vessel 10 is made of a conductive material and connected to the ground potential. The vacuum vessel 10 has a transfer chamber 10a for transferring the object 5 to be formed, and a film forming chamber 10b for diffusing the film forming material Ma. The transfer chamber 10a extends in a predetermined transfer direction (arrow A in the figure) and is disposed on the film forming chamber 10b. In the present embodiment, the transport direction (arrow A) is set along the X axis.

  The transport mechanism 3 is a workpiece support portion that supports the workpiece 5 in the present embodiment. The conveyance mechanism 3 conveys the workpiece holding member 32 that holds the workpiece 5 in the conveyance direction (arrow A) in a state facing an exposed surface of the film forming material Ma described later. The transport mechanism 3 is composed of a plurality of transport rollers 31 installed in the transport chamber 10a. The conveyance rollers 31 are arranged at equal intervals along the conveyance direction (arrow A), and can be conveyed in the conveyance direction while supporting the workpiece holding member 32.

The plasma gun 4 is a pressure gradient type plasma source, and its main body is provided on the side wall (plasma port 10c) of the film forming chamber 10b. The plasma beam P generated in the plasma gun 4 is emitted from the plasma port 10c into the film forming chamber 10b. The plasma gun 4 includes a glass tube 42 whose one end is closed by a cathode 41. Inside the glass tube 42, a molybdenum (Mo) cylinder 45 containing a disk 43 made of LaB ₆ and a pipe 44 made of tantalum (Ta) is fixed to the cathode 41. The pipe 44 is provided for introducing a carrier gas G such as argon (Ar) into the plasma gun 4.

  A first intermediate electrode (grid) 46 and a second intermediate electrode (grid) 47 are concentrically disposed between the cathode 41 of the glass tube 42 and the plasma port 10c. An annular permanent magnet 46 a for converging the plasma beam is built in the first intermediate electrode 46. An electromagnetic coil 47 a for converging the plasma beam is also built in the second intermediate electrode 47.

  A steering coil 48 that guides the plasma beam P into the film forming chamber 10b is provided around the plasma port 10c to which the plasma gun 4 is attached. The steering coil 48 is excited by a power source for the steering coil. The emission direction of the plasma beam P is controlled by the steering coil 48. A variable power source is connected between the cathode 41 and the first and second intermediate electrodes 46 and 47 via resistors.

  The auxiliary anode 6 is a device for guiding the plasma beam P to a predetermined position C in the drawing. The auxiliary anode 6 has an annular outer shape and is disposed so as to surround a predetermined position C at the bottom of the film forming chamber 10b. The auxiliary anode 6 has an annular hollow container, and a ferrite permanent magnet 6b and a coil 6a laminated concentrically with the permanent magnet 6b are accommodated in the hollow container. For the auxiliary anode 6, a conductive material (for example, copper) having a good thermal conductivity is used. The coil 6a and the permanent magnet 6b control the direction of the plasma beam P incident on the predetermined position C according to the amount of current flowing through the coil 6a.

  The main anode mechanism 2 is a mechanism for sucking the plasma beam P to a predetermined position C in the film forming chamber 10b. The main anode mechanism 2 is provided in the film forming chamber 10 b of the vacuum vessel 10, and is disposed in the negative direction in the Z-axis direction with respect to the transport mechanism 3.

  Here, FIG. 2A, FIG. 2B, FIG. 3A, and FIG. 3B are side sectional views showing the configuration of the main anode mechanism 2 and its operation. These drawings show almost the same cross section as that of the film forming apparatus 1a shown in FIG. Referring to FIG. 2A, the main anode mechanism 2 includes a transfer mechanism 2 a, a cleaning main anode member 21, a film forming main anode member 22, and a positioning member 24.

The cleaning main anode member 21 is a first main anode member that functions as a main anode that sucks the plasma beam P when the surface of the workpiece 5 (see FIG. 1) is cleaned before film formation. The film forming main anode member 22 is a second main anode member that functions as a main hearth that holds the film forming material Ma and sucks the plasma beam P when forming a film on the surface of the workpiece 5. It is. The cleaning main anode member 21 and the film forming main anode member 22 have substantially the same cylindrical outer shape, and the outer diameters in the vicinity of the lower end of the main anode member 21 are enlarged toward the lower end. The main anode member 22 for film formation is formed with a recess 22a for holding the film formation material Ma. On the other hand, the cleaning main anode member 21 is not provided with a recess for accommodating the film forming material, and is formed solid. Examples of the film forming material Ma include an insulating sealing material such as SiO ₂ and SiON, and a conductive material such as ITO.

  The transfer mechanism 2a is a mechanism for sequentially transferring the cleaning main anode member 21 and the film forming main anode member 22 to a predetermined position C. The transfer mechanism 2 a includes a main anode mounting table 23, a support column 25, a motor 26, and a main anode push-up member 27. Among these, the main anode mounting table 23 and the column 25 constitute a main anode mounting portion for mounting the cleaning main anode member 21 and the film forming main anode member 22.

  The main anode mounting table 23 is a plate-like member and has a mounting surface along a horizontal plane (XY plane). The main anode mounting table 23 has a cleaning main anode member 21 and a film forming main anode member 22 mounted on a mounting surface. In the main anode mounting table 23, two through holes 23 a and 23 b that penetrate the main anode mounting table 23 in the thickness direction (that is, the vertical direction) are formed at equal distances from the center of the main anode mounting table 23. Further, the main anode mounting table 23 is arranged so that each of the two through holes 23a and 23b can be individually moved directly below the predetermined position C. The inner diameters of the through holes 23 a and 23 b are smaller than the outer diameters of the lower ends of the cleaning main anode member 21 and the film forming main anode member 22. The cleaning main anode member 21 and the film forming main anode member 22 are respectively placed on the through holes 23a and 23b.

  The support column 25 extends in the vertical direction (Z-axis direction) and supports the main anode mounting table 23. The support column 25 is disposed through the opening provided in the bottom wall 10d of the film forming chamber 10b. The support column 25 can be rotated around the axis B by a predetermined angle by a motor 26 provided outside the vacuum vessel 10, and the upper end of the support column 25 is fixed to the central portion of the main anode mounting table 23. Yes. The column 25 rotates the main anode mounting table 23 by a predetermined angle so that the cleaning main anode member 21 and the film forming main anode member 22 mounted on the mounting surface of the main anode mounting table 23 are placed at a predetermined position C. It can be moved sequentially to the bottom. The gap between the support column 25 and the bottom wall 10d is hermetically sealed.

  The main anode push-up member 27 is a member for pushing up the cleaning main anode member 21 or the film forming main anode member 22 on the main anode mounting table 23 to a predetermined position C. The main anode push-up member 27 is a bar-like member extending in the vertical direction, and is disposed below the predetermined position C and inserted into an opening provided in the bottom wall 10d of the film forming chamber 10b. The main anode push-up member 27 can be moved in the vertical direction by an actuator provided outside the vacuum vessel 10, and passes through the through hole 23 a or 23 b of the main anode mounting table 23, or the cleaning main anode member 21 or The main anode member 22 for film formation can be lifted from below and pushed up to a predetermined position C. The gap between the main anode push-up member 27 and the bottom wall 10d is hermetically sealed.

  The positioning member 24 is a member for positioning the cleaning main anode member 21 or the film forming main anode member 22 pushed up by the main anode pushing member 27 at a predetermined position C. The positioning member 24 is formed in a cylindrical shape, is disposed so as to be surrounded by the annular auxiliary anode 6 at a predetermined position C in the film forming chamber 10 b, and is fixed to the vacuum vessel 10. Inside the positioning member 24 is a receiving hole 24 a that fits with the cleaning main anode member 21 and the film forming main anode member 22. The vicinity of the lower end of the receiving hole 24a is formed in a tapered shape according to the outer diameter enlarged portion near the lower ends of the cleaning main anode member 21 and the film forming main anode member 22.

  The operation of the transfer mechanism 2a is as follows. First, when cleaning the surface of the workpiece 5 (see FIG. 1), the main anode member 21 for cleaning placed on the main anode mounting table 23 is moved below the predetermined position C by rotating the support column 25. Transfer to Then, as shown in FIG. 2A, the cleaning main anode member 21 is pushed up to a predetermined position C by the main anode pushing member 27 and is fitted into the receiving hole 24 a of the positioning member 24. The cleaning main anode member 21 pushed up by the main anode push-up member 27 is kept at a positive potential with respect to the vacuum vessel 10 which is the ground potential, and sucks the plasma beam P.

  When a film is formed on the object to be processed 5 after cleaning the object to be processed 5, as shown in FIG. Return to the main anode mounting table 23. Subsequently, as shown in FIG. 3A, the support column 25 is rotated again, and the main anode member 22 for film formation placed on the main anode mounting table 23 is transferred below the predetermined position C. Subsequently, as shown in FIG. 3B, the main anode pushing member 27 pushes the film forming main anode member 22 to a predetermined position C and is fitted into the receiving hole 24 a of the positioning member 24. The main anode member 22 for film formation pushed up by the main anode push-up member 27 is kept at a positive potential with respect to the vacuum vessel 10 which is the ground potential, and sucks the plasma beam P.

  FIG. 4 is a flowchart showing the film forming method according to the present embodiment. The film forming method of the present embodiment is preferably carried out using the film forming apparatus 1a described above. Hereinafter, the film forming method of the present embodiment will be described together with the operation of the film forming apparatus 1a with reference to FIGS.

  First, in the film forming chamber 10b of the vacuum vessel 10, the cleaning main anode member 21 is transferred to a predetermined position C using the transfer mechanism 2a (step S11). Next, the plasma beam P is irradiated from the plasma gun 4 into the film forming chamber 10 b, and the auxiliary anode 6 is used to guide the plasma beam P to the cleaning main anode member 21. When the plasma beam P is stabilized, the workpiece 5 set in the transfer chamber 10a of the vacuum vessel 10 is transferred onto the film forming chamber 10b, and the workpiece 5 is exposed to the plasma beam P. Thereby, ion particles generated by the plasma beam P sputter the surface of the object 5 to be processed, and minute impurities adsorbed on the surface of the object 5 are removed (cleaned) (step S13, cleaning process).

An example of suitable cleaning conditions in the cleaning process is shown below.
Discharge current: 80 [A]
Discharge voltage: 50 to 70 [V]
Energy of ion particles incident on the workpiece: 10 to 30 [eV]
Deposition chamber pressure: 1 to 5 [mTorr] (0.133 to 0.667 [Pa])
Deposition chamber introduction gas: Ar and O ₂
Cleaning time: 1-3 [min]

  Subsequently, as shown in FIGS. 2 (a), 2 (b), 3 (a), and 3 (b), the cleaning main anode member 21 is moved from the predetermined position C using the transfer mechanism 2a. The main anode member 22 for film formation holding the film forming material Ma is removed and transferred to a predetermined position C (step S15, main anode replacement step).

  Subsequently, the plasma beam P is irradiated from the plasma gun 4 into the film forming chamber 10 b, and the plasma beam P is guided to the film forming main anode member 22 using the auxiliary anode 6. The main anode member 22 for film formation sucks the plasma beam P. At this time, it is preferable to remove the workpiece 5 from the film forming chamber 10b. Then, when the plasma beam P is stabilized, the workpiece 5 that has been cleaned is transferred again onto the film forming chamber 10b.

  When the film forming material Ma is made of an insulating material, when the film forming main anode member 22 sucks the plasma beam P, the film forming main anode member 22 is heated by the current from the plasma beam P, and the film forming material Ma The surface portion is vaporized and ionized by the plasma beam P. Then, the ionized film forming material particles Mb diffuse into the film forming chamber 10b. When the film forming material Ma is made of a conductive material, when the film forming main anode member 22 sucks the plasma beam P, the film forming material Ma is directly heated by the current from the plasma beam P. The tip portion is vaporized and ionized by the plasma beam P. Then, the ionized film forming material particles Mb diffuse into the film forming chamber 10b. The film forming material particles Mb diffused into the film forming chamber 10b move upward (Z-axis positive direction) above the film forming chamber 10b and adhere to the surface of the object 5 to be processed in the transfer chamber 10a. In this way, a desired film is formed on the surface of the workpiece 5 (step S17, film forming process).

Below, an example of the suitable film-forming conditions in a film-forming process is shown.
Discharge current: 60 to 150 [A]
Discharge voltage: 40 to 65 [V]
Energy of ion particles incident on the workpiece: 10 to 30 [eV]
Deposition chamber pressure: 3 to 5 [mTorr] (0.4 to 0.667 [Pa])
Deposition chamber introduction gas: Ar and O ₂

  The effects of the film forming method and film forming apparatus according to the present embodiment will be described. In the physical vapor deposition method (for example, ion plating method) using plasma as in the present embodiment, by irradiating (suctioning) plasma to the main hearth side while holding the film forming material on the main hearth (main anode), The film forming material is heated and vaporized. However, if the same main hearth is used for cleaning the object to be processed, it is necessary to perform cleaning under conditions where the film forming material in the main hearth does not vaporize, so that the cleaning conditions such as the discharge voltage are restricted. It becomes. In contrast, in the film forming method and the film forming apparatus 1a according to the present embodiment, after the cleaning main anode member 21 is used for cleaning, the film forming main anode member 22 holding the film forming material Ma is used. The film is formed. As described above, the cleaning main anode member 21 is prepared separately from the film forming main anode member 22 that holds the film forming material Ma, and cleaning is performed by using the cleaning main anode member 21 to restrict the cleaning conditions. Therefore, the cleaning can be performed under the optimum conditions for the workpiece 5.

  Further, in the film forming method and the film forming apparatus 1a according to the present embodiment, in the cleaning process, the plasma gun P is irradiated with the plasma beam P and the auxiliary anode 6 disposed so as to surround the cleaning main anode member 21 is used. The plasma beam P is guided to the cleaning main anode member 21. As a result, the density of the plasma beam P in the film forming chamber 10b is symmetric with respect to the cleaning main anode member 21, and the energy and density of the film forming material particles Mb in the vicinity of the workpiece 5 are changed from the plasma gun 4. It can be optimized by adjusting the plasma current. Therefore, according to the film forming method and the film forming apparatus 1a according to the present embodiment, the degree of damage to the surface of the workpiece 5 during cleaning can be reduced. Even when an ITO film, a silicon oxide film, or the like is formed on a fragile surface, cleaning can be suitably performed without damaging the organic EL layer, the resin substrate, the resin film, or the like. Then, by forming an ITO film, a silicon oxide film, or the like after cleaning, a film having excellent sealing properties, blocking properties, and waterproof properties can be formed. Of course, the film forming method and the film forming apparatus 1a according to the present embodiment are also effective for the surface of the glass substrate.

  Further, as in the film forming method of the present embodiment, the main anode replacement step S15 for removing the cleaning main anode member 21 from the predetermined position C and transferring the film forming main anode member 22 to the predetermined position C is performed as the cleaning step S13. And the film forming step S17. Alternatively, as in the present embodiment, the film forming apparatus 1a preferably includes a transfer mechanism 2a that sequentially transfers the cleaning main anode member 21 and the film forming main anode member 22 to a predetermined position C. Thus, the cleaning step S13 and the film forming step S17 can be performed in the same chamber of the vacuum vessel 10 (in the film forming chamber 10b), so that the film forming apparatus 1a can be downsized.

(Second Embodiment)
FIG. 5 is a side sectional view showing the configuration of the second embodiment of the film forming apparatus according to the present invention. The film forming apparatus 1b of this embodiment is an ion plating apparatus, like the film forming apparatus 1a of the first embodiment, and is suitably used for carrying out the film forming method according to the present invention. FIG. 5 also shows an XYZ orthogonal coordinate system for ease of explanation.

  The difference in configuration between the film forming apparatus 1b of the present embodiment and the film forming apparatus 1a of the first embodiment is that the film forming apparatus 1a of the first embodiment uses the cleaning main anode member 21 and the film forming main anode member. In the film forming apparatus 1b of this embodiment, the cleaning main anode member 21 and the film forming main anode member 22 are provided in separate vacuum chambers. This is the point.

  Specifically, the film forming apparatus 1b of the present embodiment includes a cleaning main anode member 21, a film forming main anode member 22, a transport mechanism 3, plasma guns 4a and 4b, auxiliary anodes 61 and 62, and a vacuum vessel 11. Is provided.

The vacuum vessel 11 is made of a conductive material and connected to the ground potential. Vacuum vessel 11, a cleaning chamber 11b for generating a transfer chamber 11a for carrying the object 5 which is a deposition target, the plasma beam P ₁ for cleaning the surface of the object 5, the film-forming material A film forming chamber 11d for diffusing Ma to form a film on the surface of the workpiece 5 is provided. The cleaning chamber 11b and the film forming chamber 11d are arranged side by side in a predetermined direction (X-axis direction in the present embodiment). The transfer chamber 11a extends in a predetermined transfer direction (arrow A in the figure), and is disposed over the cleaning chamber 11b and the film formation chamber 11d. In the present embodiment, the transport direction (arrow A) is set along the X axis.

  The transport mechanism 3 is a workpiece support unit that supports the workpiece 5. The conveyance mechanism 3 conveys the workpiece holding member 32 that holds the workpiece 5 in the conveyance chamber 11a in the conveyance direction (arrow A). The transport mechanism 3 is composed of a plurality of transport rollers 31 installed in the transport chamber 11a. The conveyance rollers 31 are arranged at equal intervals along the conveyance direction (arrow A), and can be conveyed in the conveyance direction while supporting the workpiece holding member 32. In addition, as the to-be-processed object 5, the thing similar to the said 1st Embodiment is illustrated.

The plasma gun 4a is a first plasma gun in the present embodiment. The plasma gun 4b is a second plasma gun in the present embodiment. Each of the plasma guns 4a and 4b is a pressure gradient type plasma source. The main body portion of the plasma gun 4a is provided on the side wall (plasma port 11c) of the cleaning chamber 11b. The main body of the plasma gun 4b is provided on the side wall (plasma port 11e) of the film forming chamber 11d. Plasma beam _{P 1} and _{P 2} produced in each of the plasma guns 4a and 4b are emitted from the respective plasma port 11c and 11e to the cleaning chamber 11b inside and the film forming chamber 11d. The configuration of each of the plasma guns 4a and 4b is the same as that of the plasma gun 4 of the first embodiment (see FIG. 1), and therefore detailed illustration of the plasma guns 4a and 4b is omitted.

Cleaning main anode member 21, when cleaning the surface of the object 5 before the formation and functions as a first main anode for attracting the plasma beam P _1. Further, the film-forming primary anode member 22, when forming a film on the surface of the object 5, which functions as a second main anode for attracting the plasma beam P ₂ (main hearth). The cleaning main anode member 21 and the film forming main anode member 22 are fixed to the bottoms of the cleaning chamber 11b and the film forming chamber 11d, respectively, and are arranged in the negative direction in the Z-axis direction with respect to the transport mechanism 3. The main anode member 22 for film formation is formed with a recess 22a for holding the film formation material Ma. On the other hand, the cleaning main anode member 21 is not provided with a recess for accommodating the film forming material, and is formed solid. As the film forming material Ma, the same material as in the first embodiment is exemplified.

The auxiliary anode 61 is a device for guiding the plasma beam P ₁ to the cleaning main anode member 21. The auxiliary anode 61 has an annular outer shape, and is disposed surrounding the cleaning main anode member 21 at the bottom of the cleaning chamber 11b. The auxiliary anode 62 is a device for guiding the plasma beam P ₂ to the film-forming main anode member 22. The auxiliary anode 62 has an annular outer shape and is disposed so as to surround the main anode member 22 for film formation at the bottom of the film formation chamber 11d. Each of the auxiliary anodes 61 and 62 has an annular hollow container, and a ferrite permanent magnet 6b and a coil 6a laminated concentrically with the permanent magnet 6b are accommodated in the hollow container. ing. For the auxiliary anodes 61 and 62, a conductive material (for example, copper) having a good thermal conductivity is used. Coil 6a and the permanent magnet 6b, depending on the amount of current flowing through the coil 6a, and controls the direction of the plasma beam P ₁ or P ₂ that enters the cleaning main anode member 21 or the film-forming main anode member 22.

  FIG. 6 is a flowchart showing the film forming method according to the present embodiment. The film forming method of this embodiment is preferably carried out using the film forming apparatus 1b described above. Hereinafter, the film forming method of the present embodiment will be described together with the operation of the film forming apparatus 1b with reference to FIGS.

First, the main anode member for film formation 22 holding (accommodating) the film formation material Ma is fixed at a predetermined position in the film formation chamber 11d (step S21). Next, the plasma gun 4 a irradiates the plasma beam P ₁ into the cleaning chamber 11 b and guides the plasma beam P ₁ to the cleaning main anode member 21 using the auxiliary anode 61. Cleaning main anode member 21 sucks the plasma beam P _1. When the plasma beam P ₁ is stable, to convey the object 5 being set to transfer chamber 11a of the vacuum vessel 11 to the cleaning chamber on 11b (step S23), exposing the object 5 in the plasma beam P _1. Accordingly, the plasma beam P ion particles produced by ₁ to sputter the surface of the object to be treated 5, fine impurities adsorbed on the surface of the object 5 is removed (cleaned) (step S25, a cleaning step).

Subsequently, the plasma gun 4 b irradiates the plasma beam P ₂ into the film forming chamber 11 d and guides the plasma beam P ₂ to the film forming main anode member 22 using the auxiliary anode 62. Film-forming main anode member 22 sucks the plasma beam P _2. When the plasma beam P ₂ is stable, it is transported by the transport mechanism 3 to the object 5 in the transfer chamber 11a into the film forming chamber on 11d (step S27).

Since the film forming material Ma held in the film formation main anode member 22 is heated by the plasma beam P _2, vaporized surface portion of the film forming material Ma ionized deposition material particles Mb film forming chamber 11d Diffuses in. Film forming material particles Mb diffused into the film forming chamber 11d, the plasma beam is ionized by P _2, then moves upward in the deposition 11d (Z-axis positive direction), the surface of the object 5 in the transfer chamber 11a It adheres like a film. In this way, a desired film is formed on the surface of the workpiece 5 (step S29, film forming process).

  Note that suitable conditions in each of the cleaning process and the film forming process are the same as those in the first embodiment.

  In the film forming method and film forming apparatus 1b according to the present embodiment, after the cleaning is performed in the cleaning chamber 11b having the cleaning main anode member 21, the film forming main anode member 22 that holds the film forming material Ma is formed. Film formation is performed in the film chamber 11d. As described above, the cleaning condition is not restricted by performing cleaning and film formation using the vacuum container 11 having the vacuum chamber for cleaning (cleaning chamber 11b) and the vacuum chamber for film formation (film formation chamber 11d). Therefore, the cleaning can be performed under the optimum conditions for the workpiece 5.

Further, the film forming method and a film forming apparatus 1b of this embodiment, like the first embodiment, during the cleaning of the object to be treated 5, and irradiates the plasma beam P ₁ from the plasma gun 4a, cleaning main anode The plasma beam P is guided to the cleaning main anode member 21 by using the auxiliary anode 61 disposed so as to surround the member 21. Thus, the density of the plasma beam P ₁ in the cleaning chamber 11b becomes symmetrical about the cleaning main anode member 21, also the energy and density of the film forming material particles Mb near the object 5 from the plasma gun 4a It can be optimized by adjusting the plasma current. Therefore, according to the film forming method and the film forming apparatus 1b according to the present embodiment, the degree of damage to the surface of the workpiece 5 during cleaning can be reduced. Even when an ITO film, a silicon oxide film, or the like is formed on a fragile surface, cleaning can be suitably performed without damaging the organic EL layer, the resin substrate, the resin film, or the like. Then, by forming an ITO film, a silicon oxide film, or the like after cleaning, a film having excellent sealing properties, blocking properties, and waterproof properties can be formed. Of course, the film forming method and the film forming apparatus 1b according to the present embodiment are also effective for the surface of the glass substrate.

  In addition, according to the film forming method and the film forming apparatus 1b of the present embodiment, the cleaning process S25 and the film forming process S27 can be performed while continuously conveying the plurality of objects to be processed 5, so that the plurality of objects to be processed It is possible to efficiently perform cleaning and film formation on the object 5.

  The film forming method and the film forming apparatus according to the present invention are not limited to the above-described embodiments, and various other modifications are possible. For example, in the above embodiments, the substrate product related to the organic EL panel is exemplified as the object to be processed. However, the film forming method and the film forming apparatus according to the present invention can be used for various other objects to be processed. .

It is side surface sectional drawing which shows the structure of 1st Embodiment of the film-forming apparatus by this invention. (A) (b) It is side surface sectional drawing which shows the structure of the main anode mechanism, and its operation | movement. (A) (b) It is side surface sectional drawing which shows the structure of the main anode mechanism, and its operation | movement. It is a flowchart which shows the film-forming method by 1st Embodiment. It is side surface sectional drawing which shows the structure of 2nd Embodiment of the film-forming apparatus by this invention. It is a flowchart which shows the film-forming method by 2nd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a, 1b ... Film-forming apparatus, 2 ... Main anode mechanism, 2a ... Transfer mechanism, 3 ... Conveyance mechanism, 4, 4a, 4b ... Plasma gun, 5 ... To-be-processed object, 6, 61, 62 ... Auxiliary anode, 6a ... Coil, 6b ... permanent magnet, 10, 11 ... vacuum vessel, 10a, 11a ... transfer chamber, 10b, 11d ... film forming chamber, 11b ... cleaning chamber, 21 ... main anode member for cleaning, 21 ... main anode member, 22 ... Main anode member for film formation, 23 ... Main anode mounting table, 24 ... Positioning member, 25 ... Column, 26 ... Motor, 27 ... Main anode push-up member, 31 ... Conveying roller, 32 ... Workpiece holding member, Ma ... Film forming material, Mb: film forming material particles.

Claims (6)

A cleaning step of irradiating the plasma from the plasma gun, guiding it to the first main anode, and exposing the object to be processed to the plasma, thereby cleaning the surface of the object to be processed;
A film is formed on the surface of the object to be processed by irradiating the second main anode holding the film forming material with plasma to vaporize the film forming material and attaching the film forming material to the object to be processed. And a film forming process for forming the film.   A main anode exchange step of removing the first main anode and transferring the second main anode to a position where the first main anode was installed between the cleaning step and the film forming step; The film forming method according to claim 1, further comprising:   A cleaning chamber containing the first main anode and having the plasma gun, a film forming chamber juxtaposed with the cleaning chamber and containing the second main anode and having a plasma gun different from the plasma gun, and the cleaning A vacuum container having a transfer chamber disposed over the chamber and over the film formation chamber, while transferring the object to be processed in the transfer chamber, the cleaning step and the film formation chamber in each of the cleaning chamber and the film formation chamber; The film forming method according to claim 1, wherein a film forming process is performed. A film forming apparatus that vaporizes the film forming material by irradiating the film forming material with plasma and deposits the film forming material on the surface of an object to be processed,
A vacuum vessel;
A plasma gun for irradiating the plasma into the vacuum vessel;
A main anode mechanism that is provided in the vacuum vessel and sucks the plasma to a predetermined position in the vacuum vessel;
The main anode mechanism is
A first main anode member for sucking the plasma;
A second main anode member for sucking the plasma and holding the film forming material;
And a transfer mechanism that sequentially transfers the first and second main anode members to the predetermined position. The transfer mechanism is
A main anode mounting portion for mounting the first and second main anode members and sequentially moving the first and second main anode members downward from the predetermined position;
A main anode push-up member that is provided so as to be movable in the vertical direction below the predetermined position, and that pushes up the first or second main anode member that has been moved below the predetermined position to the predetermined position. The film forming apparatus according to claim 4, wherein the film forming apparatus is characterized. A film forming apparatus for forming a film by vaporizing a film forming material and adhering it to the surface of an object to be processed,
A vacuum chamber having a cleaning chamber and a film forming chamber juxtaposed to each other, and a transfer chamber disposed over the cleaning chamber and the film forming chamber;
A first plasma gun for irradiating plasma into the cleaning chamber;
A first main anode provided in the cleaning chamber for sucking the plasma from the first plasma gun;
A second plasma gun for irradiating plasma into the film forming chamber;
A second main anode that is provided in the film forming chamber and sucks the plasma from the second plasma gun and holds the film forming material;
A film forming apparatus comprising: a transfer mechanism that is provided in the transfer chamber, supports the object to be processed, and transfers the object to be processed from the cleaning chamber to the film forming chamber.

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