JP2007006198A - High frequency circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To extract a wide band high frequency signal to a waveguide with low loss and without degrading airtightness, and without using a converter between a transmission line and the waveguide, or a converter between an antenna and the waveguide of a high frequency circuit device of a quasi-millimeter band or more. <P>SOLUTION: The high frequency circuit device is provided with a metal cabinet for grounding; a transmission line between at least one or more layers of dielectric substrates contacting inside of the metal cabinet and an electrode; a semiconductor including lumped constant elements of resisters, capacitors, and inductors; and a metal cover. A part of the metal cabinet for grounding is removed which is just below a plane contacting an electrode for grounding of the transmission line, a cavity of the same dimension as the waveguide is prepared, the cavity and the waveguide are connected, and the electrode for grounding of the transmission line just above a plane contacting the cavity is removed in a shape of the same dimension of the waveguide, or in a shape of a dimension obtained by multiplying the waveguide dimension by a inverse number of square root of a dielectric constant of the dielectric substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention is a technique relating to a structure that achieves both a low loss, a wide band, and a miniaturization of a high-frequency circuit device used for mobile radio terminals of the quasi-millimeter wave band or higher, video transmission, and the like.

  Introducing a document of an example of a high-frequency circuit module using a metal casing and a single-layer dielectric substrate in a high-frequency circuit device used for mobile radio terminals and image transmissions of the quasi-millimeter wave band or higher, and other conventional This technique will be described below with reference to FIGS.

  In Microwave Workshop MWE2000 (WS5-3) “Packaging Technologies for Millimeter-wave Wireless Module” (Non-Patent Document 1) issued in December 2000, a lumped constant element including a resistor, a capacitor and an inductor, a semiconductor, A single-layer dielectric substrate on which a transmission line to be taken out is formed is arranged on the same surface of the ground metal case. In this example, the high-frequency circuit module structure is hermetically sealed with a metal lid, and a square hole is provided in the metal lid to extract a high-frequency signal to the outside. The square hole of the metal lid is sealed with a dielectric. This structure has an advantage of downsizing by forming a lumped constant element of a resistor, a capacitor and an inductor, a semiconductor, and a transmission line for extracting a high frequency signal on the same surface of the ground metal casing.

  Further, as an example of a high-frequency circuit module using a multilayer dielectric substrate, Microwave Works MWE2000 (WS5-2) “Low Cost Millimeter-Wave MMIC Assembling and Modular Technologies 2” (Non-patent Document 2) As shown in FIG. 4, a high-frequency circuit module structure is formed in which a lumped constant element of resistance, capacitance, and inductor, a semiconductor, and a transmission line are formed on the same surface of a dielectric substrate and sealed with another dielectric substrate. . In this example, antenna electrodes provided on the surface of the dielectric substrate are connected by a transmission line, and high-frequency signals are taken out by the antenna electrodes provided on the surface of the dielectric substrate. This structure has an advantage of miniaturization by forming a lumped constant element of resistance, capacitance and inductor, a semiconductor, a transmission line, and an antenna on the same surface of a dielectric substrate.

  In FIG. 9, a semiconductor including a lumped constant element of a resistor, a capacitor, and an inductor, and a single-layer dielectric substrate for extracting a high-frequency signal and a transmission line of electrodes are arranged on the same surface of a ground metal case. FIG. 2 is a general cross-sectional schematic view of a high-frequency circuit device sealed with a metal lid provided with square holes. Ground metal case 1, semiconductor 2, single-layer dielectric substrate 3 that forms a transmission line for extracting high-frequency signals, electrode 14, ground metal electrode 17, airtight pin 4 that applies power and signals to semiconductor 2, semiconductor 2, a wire 5 that connects the airtight pin 4, a wire 6 that connects the semiconductor 2 and the electrode 14, a metal lid 7 provided with square holes, and a dielectric 13 for sealing.

  FIG. 10 is a general schematic plan view of the high-frequency circuit device of FIG. A ground metal case 1, a semiconductor 2, a single-layer dielectric substrate 3 and an electrode 14 that form a transmission line for extracting a high-frequency signal, an airtight pin 4 for applying power and signals to the semiconductor 2, and a semiconductor 2 and an airtight pin 4 , A wire 6 connecting the semiconductor 2 and the electrode 14, a position 7b of the metal lid 7 provided with a square hole, and a position 13b of the dielectric 13 for sealing.

  In FIG. 11, a semiconductor including a lumped constant element of a resistor, a capacitor, and an inductor, and a single-layer dielectric substrate for extracting a high-frequency signal and a transmission line of electrodes are arranged on the same surface of a metal casing for grounding. 1 is a general cross-sectional schematic view of a high-frequency circuit device that coaxially extracts a high-frequency signal from a ground metal casing. Ground metal case 1, semiconductor 2, single-layer dielectric substrate 3 that forms a transmission line for extracting high-frequency signals, electrode 14, ground metal electrode 17, airtight pin 4 that applies power and signals to semiconductor 2, semiconductor 2, a wire 5 connecting the airtight pin 4, a wire 6 connecting the semiconductor 2 and the electrode 14, a metal lid 7 for sealing, a coaxial connector 15 for extracting a high frequency signal, and an electrode 14 and the coaxial connector 15. It consists of wiring 16 for connection.

  12 is a general plan schematic view of the high-frequency circuit device of FIG. A ground metal case 1, a semiconductor 2, a single-layer dielectric substrate 3 and an electrode 14 that form a transmission line for extracting a high-frequency signal, an airtight pin 4 for applying power and signals to the semiconductor 2, and a semiconductor 2 and an airtight pin 4 The wire 5 connecting the semiconductor 2 and the electrode 14, the wire 6 connecting the semiconductor 2 and the electrode 14, the position 7 b of the metal lid 7 for sealing, and the position 16 b of the wiring 16. ing.

    Further, although not shown, a slit that is narrower than the waveguide is provided in a ground metal case just below the surface where the transmission line between the dielectric substrate and the electrode for extracting a high frequency signal is in contact with the ground electrode of the transmission line. A method has also been devised in which a waveguide is connected to a thin slit, and a high-frequency signal that resonates by converting impedance from the transmission line with a thin slit is extracted to the waveguide with low loss.

Although not shown, it is known that when a transmission line without grounding is provided in the waveguide, a conversion part is unnecessary and a high-frequency signal can be extracted to the waveguide with low loss.
Microwave Workshop MWE2000 (WS5-3) "Packaging Technologies for Millimeter-wave Wireless Module" December 2000 Microwave Works MWE2000 (WS5-2) "Low Cost Millimeter-Wave MMIC Assembling and Modular Technologies" December 2000

  In the first example shown in the above prior art, a lumped constant element of resistance, capacitance, and inductor, a semiconductor, and a transmission line for extracting a high frequency signal are formed on the same surface of the ground metal casing, Square holes are provided in the metal lid for sealing. For this reason, there is a structural limitation in taking out a high-frequency signal through the waveguide, and a conversion part between the transmission line and the waveguide is required, which increases the loss of the high-frequency signal.

  In the second example, a lumped constant element of resistance, capacitance, and inductor, a semiconductor, a transmission line, and an antenna electrode are formed on the same surface of a dielectric substrate, and another dielectric substrate is used. It is sealed. For this reason, there is a structural limitation in taking out a high-frequency signal through the waveguide, and an antenna part and a conversion part of the waveguide are required, which increases the loss of the high-frequency signal.

  In other prior arts, as is apparent from FIGS. 9 and 10, there is a structural limitation in taking out a high-frequency signal by a waveguide (not shown), and the metal lid portion provided with a square hole and the waveguide A conversion part is required, and the loss of high-frequency signals increases. Further, as apparent from FIGS. 11 and 12, in order to extract a high frequency signal by a waveguide (not shown), a conversion portion between the coaxial and the waveguide is required, and the loss of the high frequency signal increases. In either example, the size can be reduced, but a high-frequency signal cannot be taken out to the waveguide with low loss.

  Furthermore, a slit that is narrower than the waveguide is provided in a metal casing for grounding directly below the surface on which the electrode transmission line for extracting a high-frequency signal is in contact with the dielectric substrate, and the waveguide is connected to the narrow slit. However, the method of extracting the high-frequency signal that resonates by converting the impedance from the transmission line with a thin slit to the waveguide with low loss results in a narrow band because resonance is used.

  The present invention provides a transmission line in order to achieve both a low loss, a wide band, and a small size while maintaining an airtight structure of a high-frequency circuit device used for a mobile radio terminal or image transmission of a quasi-millimeter wave band or higher. The object is to eliminate the conversion part of the waveguide or the conversion part of the antenna part and the waveguide.

  It is another object of the present invention to reduce dielectric loss and generation of unnecessary modes due to the dielectric.

  In order to achieve the above object, the present invention provides a ground metal case, a transmission line of at least one dielectric substrate and an electrode in contact with the inside of the metal case, a resistor, a capacitor, and an inductor. In a high-frequency circuit device having a semiconductor including a lumped constant element and a metal lid, a part of the ground metal casing directly below the surface in contact with the ground electrode of the transmission line is removed to have the same dimensions as the waveguide. A dielectric is provided with a cavity, a waveguide is connected to the cavity, and the grounding electrode of the transmission line immediately above the surface in contact with the cavity has the same shape as the waveguide or the dimension of the waveguide. This is a structure in which the shape is multiplied by the reciprocal of the square root of the relative dielectric constant.

  In addition, a metal housing for grounding, a transmission line of at least two layers of dielectric substrates and electrodes in contact with the inside of the metal housing, a semiconductor including a lumped constant element of a resistor, a capacitor, and an inductor, a metal In a high-frequency circuit device having a lid, a part of the ground metal case just below the surface in contact with the ground electrode of the transmission line is removed to provide a cavity having the same dimensions as the waveguide, and the waveguide is guided to the cavity. Connect the tube, remove the grounding electrode of the transmission line directly above the surface in contact with the cavity, and at least a part of the dielectric substrate of one or more layers from the lowest layer, and make the shape of the same size as the waveguide The structure has a cavity.

  As a result, a high-frequency signal in a wide band can be reduced by using an electrode transmission line formed on the dielectric substrate while having an airtight structure without using a coaxial / waveguide converter or an antenna / waveguide converter. It can be extracted to the waveguide with loss.

  Furthermore, a dielectric material having a relative dielectric constant lower than that of the dielectric substrate is filled and sealed inside all the cavities from which a portion of the ground metal casing directly below the surface in contact with the ground electrode of the transmission line is removed. The structure of the airtight structure, the size of the hollow cavity from which a part of the ground metal casing just below the surface in contact with the grounding electrode of the transmission line was removed, and the grounding electrode of the transmission line just above the surface in contact with the cavity were removed The dimension is a dimension obtained by multiplying the dimension of the waveguide by the reciprocal of the square root of the relative dielectric constant of the dielectric material having a low relative dielectric constant.

  When the inside of all cavities from which one or more dielectric substrates are removed from the lowermost layer is filled with a dielectric material having a relative dielectric constant lower than that of the dielectric substrate and sealed to form an airtight structure, The dimension of the cavity obtained by removing a part of one or more dielectric substrates from the lower layer is the dimension obtained by multiplying the dimension of the waveguide by the inverse of the square root of the dielectric constant of the dielectric material having a low relative dielectric constant. It is.

As a result, it is easy to obtain an airtight structure with a structure in which a broadband high-frequency signal is extracted to the waveguide with low loss.
The electrode is a solid with a low electrical resistance, and a metal is mainly used.

According to the present invention, as in the case where a transmission line without grounding is provided in the waveguide, a high-frequency signal can be taken out to the waveguide with a low loss, and airtightness is not impaired.
A metal lid that is in contact with the transmission line via a dielectric substrate is provided with a slit that is narrower than the waveguide, and the waveguide is connected to the narrow slit. Unlike the method of extracting a high-frequency signal to the waveguide, a broadband high-frequency signal can be extracted to the waveguide. Therefore, a common structure can be obtained at a wide frequency, and mechanical parts can be standardized at a wide frequency, and the cost can be reduced.

  In addition, by filling the inside of the cavity with the metal lid, metal electrode, and dielectric substrate underneath with a dielectric material with a low relative dielectric constant and sealing it, broadband high-frequency signals can be made into a waveguide with low loss. With the structure to take out, it becomes easy to make an airtight structure. Further, since the dielectric substrate for extracting the high-frequency signal to the waveguide is thinned or replaced with a dielectric material having a low dielectric constant, loss due to the dielectric substrate and generation of unnecessary modes can be reduced.

  Hereinafter, the first embodiment of the present invention will be described in detail. FIG. 1 is a schematic cross-sectional view of a high-frequency circuit device to which the present invention is applied. In FIG. 1, a transmission line of a semiconductor 2, a dielectric substrate 3, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal housing 1 and sealed with a metal lid 7. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The grounding metal electrode 17 formed on the dielectric substrate 3 immediately above the surface of the square hole 9 is made to have the same size as the waveguide 18 or the reciprocal of the square root of the relative permittivity of the dielectric substrate to the size of the waveguide 18. Remove to the shape of the hung dimensions.

  FIG. 2 is a schematic plan view of FIG. 1, which is a first embodiment of a high-frequency circuit device to which the present invention is applied. In FIG. 2, similarly to FIG. 1, a transmission line of a semiconductor 2, a dielectric substrate 3, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal housing 1 and sealed with a metal lid 7. . An airtight pin 4 is connected to the semiconductor 2 by a wire 5 and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. In other words, the metal electrode 8 is formed immediately above the position 9 b corresponding to the square hole 9 connected to the waveguide 18.

In the airtight pin 4 of the first embodiment of the present invention, the airtight pin that handles signals and the airtight pin that applies power may be shared, and the number of airtight pins is not particularly limited.
In the first embodiment of the present invention, a high-frequency signal can be taken out to the waveguide with low loss, and the airtightness is not impaired. In addition, a broadband high-frequency signal can be taken out to the waveguide. Therefore, a common structure can be obtained at a wide frequency, and mechanical parts can be standardized at a wide frequency, and the cost can be reduced.

  FIG. 3 shows a second embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 3, a transmission line of a semiconductor 2, a dielectric substrate 3, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal housing 1 and is sealed with a metal lid 7. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The square hole 9 connected to the waveguide 18 is filled with a dielectric 10 having a dielectric constant lower than that of the dielectric substrate 3. The dimension of the square hole 9 and the dimension obtained by removing the ground electrode formed on the dielectric substrate immediately above the surface of the square hole 9 are multiplied by the reciprocal of the square root of the relative dielectric constant of the dielectric substrate. Dimension.

FIG. 4 is a schematic plan view of FIG. 3, which is a second embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 4, similarly to FIG. 3, a transmission line of the semiconductor 2, the dielectric substrate 3, the metal electrode 8, and the grounding metal electrode 17 is provided on the grounding metal housing 1 and sealed with the metal lid 7. . An airtight pin 4 provided on the side surface of the ground metal case 1 is connected to the semiconductor 2 by a wire 5 to apply a power source and a signal from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The square hole 9 connected to the waveguide 18 is filled with a dielectric 10 having a dielectric constant lower than that of the dielectric substrate 3. The dimension of the square hole 9 and the dimension obtained by removing the ground metal electrode 17 formed on the dielectric substrate immediately above the surface of the square hole 9 are multiplied by the reciprocal of the square root of the relative dielectric constant of the dielectric 10. Dimensions. In other words, the metal electrode 8 is formed above the position 9 b corresponding to the square hole 9 filled with the dielectric 10.
In the second embodiment of the present invention, as in the first embodiment, the airtight pin 4 may share the airtight pin for handling signals and the airtight pin for applying power, and the number of the airtight pins is also particularly limited. is not.

In the second embodiment of the present invention, it is easy to obtain an airtight structure by taking out a broadband high-frequency signal into the waveguide with low loss.
FIG. 5 shows a third embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 5, a transmission line of a semiconductor 2, a dielectric substrate 3 having two or more layers, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal housing 1 and sealed with a metal lid 7. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The grounding metal electrode 17 formed on the dielectric substrate 3 immediately above the surface of the square hole 9 and the lower layer of the dielectric substrate 3 are removed to the same size as the waveguide.

  FIG. 6 is a schematic plan view of FIG. 5, which is a third embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 6, as in FIG. 5, a transmission line of a semiconductor 2, a dielectric substrate 3 having two or more layers, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal casing 1, and a metal lid 7 to seal. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The grounding metal electrode 17 formed on the dielectric substrate 3 immediately above the surface of the square hole 9 and the lower layer of the dielectric substrate 3 are removed in the same size as the waveguide 18. In other words, the metal electrode 8 is formed above the position 9 b corresponding to the square hole 9 connected to the waveguide 18.

  In the third embodiment of the present invention, as in the first embodiment, the airtight pin 4 may share the airtight pin that handles signals and the airtight pin that applies power, and the number of airtight pins is also particularly limited. is not.

  In the third embodiment of the present invention, a high-frequency signal can be taken out to the waveguide with low loss, and the airtightness is not impaired. In addition, a broadband high-frequency signal can be taken out to the waveguide. Therefore, a common structure can be obtained at a wide frequency, and mechanical parts can be standardized at a wide frequency, and the cost can be reduced. In addition, since the dielectric substrate that extracts the high-frequency signal to the waveguide is thinned, loss due to the dielectric substrate and generation of unnecessary modes can be reduced.

  FIG. 7 shows a fourth embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 7, a transmission line of a semiconductor 2, a dielectric substrate 3 having two or more layers, a metal electrode 8, and a grounding metal electrode 17 is provided on a grounding metal casing 1 and sealed with a metal lid 7. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The grounding metal electrode 17 formed on the dielectric substrate 3 immediately above the surface of the square hole 9 and the lower layer of the dielectric substrate 3 are removed in a square to provide a cavity 11. All the inner surfaces of the square hole 9 and the cavity 11 are filled with a dielectric 12 having a dielectric constant lower than that of the dielectric substrate 3. The dimension of the square hole 9 and the dimension of the cavity 11 are determined by multiplying the dimension of the waveguide 18 by the reciprocal of the square root of the relative dielectric constant of the dielectric 12.

  FIG. 8 is a schematic plan view of FIG. 7, which is a fourth embodiment of the high-frequency circuit device to which the present invention is applied. In FIG. 8, similarly to FIG. 7, a transmission line of a semiconductor 2, a dielectric substrate 3 having two or more layers, a metal electrode 8, and a ground metal electrode 17 is provided on a ground metal case 1, 7 to seal. An airtight pin 4 provided on the side surface of the metal casing 1 for grounding is connected to the semiconductor 2 by a wire 5, and a power source and a signal are applied from the outside. The metal electrode 8 is connected to the semiconductor 2 by the wire 6, and the square hole 9 to the square hole 9 having the same dimensions as those of the waveguide 18 provided in the metal housing 1 immediately below the metal electrode 8 surface in contact with the grounding electrode 17 of the transmission line. A high frequency signal is taken out to the waveguide 18 connected to the. The grounding metal electrode 17 formed on the dielectric substrate 3 immediately above the surface of the square hole 9 and the lower layer of the dielectric substrate 3 are removed in a square to provide the cavity 11. All the inner surfaces of the square hole 9 and the cavity 11 are filled with a dielectric 12 having a dielectric constant lower than that of the dielectric substrate 3. The dimension of the square hole 9 and the dimension of the cavity 11 are determined by multiplying the dimension of the waveguide 18 by the reciprocal of the square root of the relative dielectric constant of the dielectric 12. The metal electrode 8 is formed above the position 9 b corresponding to the square hole 9 filled with the dielectric 12.

  In the fourth embodiment of the present invention, as in the first embodiment, the airtight pin 4 may share the airtight pin that handles signals and the airtight pin that applies power, and the number of airtight pins is also particularly limited. is not.

  In the fourth embodiment of the present invention, it is easy to obtain an airtight structure by taking out a broadband high-frequency signal into the waveguide with low loss. In addition, since the dielectric substrate that extracts the high-frequency signal into the waveguide is replaced with a dielectric material having a low dielectric constant, loss due to the dielectric substrate and generation of unnecessary modes can be reduced.

1 is a schematic cross-sectional view showing the structure of a first embodiment of a high-frequency circuit device of the present invention. 1 is a schematic plan view showing the structure of a first embodiment of a high-frequency circuit device of the present invention. It is a cross-sectional schematic diagram which shows the structure of the 2nd Example of the high frequency circuit apparatus of this invention. It is a plane schematic diagram showing the structure of the second example of the high-frequency circuit device of the present invention. It is a section schematic diagram showing the structure of the 3rd example of the high frequency circuit device of the present invention. It is a plane schematic diagram which shows the structure of the 3rd Example of the high frequency circuit apparatus of this invention. FIG. 6 is a schematic cross-sectional view showing the structure of a fourth embodiment of the high-frequency circuit device of the present invention. It is a schematic plan view showing the structure of the fourth embodiment of the high-frequency circuit device of the present invention. It is a section schematic diagram showing the structure of the 1st example of the high frequency circuit device of conventional technology. It is the plane schematic which shows the structure of the 1st example of the high frequency circuit apparatus of a prior art. It is a cross-sectional schematic diagram which shows the structure of the 2nd example of the high frequency circuit apparatus of a prior art. It is a schematic plan view showing the structure of a second example of a conventional high-frequency circuit device.

Explanation of symbols

1: Metal housing 2: Semiconductor 3: Dielectric substrate
4: Airtight pin 5, 6: Wire 7: Metal lid
8: Metal electrode 9: Cavity of metal housing
10, 12: Dielectric with low relative dielectric constant 11: Cavity of dielectric substrate
13: Dielectric 14: Metal electrode 15: Coaxial connector
16: Wiring 17: Metal electrode 18: Waveguide

Claims (4)

A metal including a ground metal case, a semiconductor line including at least one layer of dielectric substrate and electrodes in contact with the inside of the ground metal case, a semiconductor including a lumped constant element including a resistor, a capacitor, and an inductor; In a high-frequency circuit device having a lid, a part of the ground metal case just below the surface in contact with the ground electrode of the transmission line is removed to provide a cavity having the same dimensions as the waveguide, and the waveguide is guided to the cavity. Connect the tube, and connect the grounding electrode of the transmission line directly on the surface in contact with the cavity to the shape of the same dimension as the waveguide or the reciprocal of the square root of the dielectric constant of the dielectric substrate to the dimension of the waveguide A high-frequency circuit device, characterized in that it has been removed in a shape with dimensions multiplied by. A metal including a ground metal case, a transmission line of at least two layers of dielectric substrates and electrodes in contact with the inner side of the ground metal case, a semiconductor including a lumped constant element of a resistor, a capacitor, and an inductor; In a high-frequency circuit device having a lid, a part of the ground metal case just below the surface in contact with the ground electrode of the transmission line is removed to provide a cavity having the same dimensions as the waveguide, and the waveguide is guided to the cavity. Connect the tube, remove the grounding electrode of the transmission line directly above the surface in contact with the cavity, and at least a part of the dielectric substrate of one or more layers from the lowest layer, and make the shape of the same size as the waveguide A high-frequency circuit device comprising a cavity. A metal including a ground metal case, a semiconductor line including at least one layer of dielectric substrate and electrodes in contact with the inside of the ground metal case, a semiconductor including a lumped constant element including a resistor, a capacitor, and an inductor; A surface having a lid, removing a part of the metal casing for grounding directly below the surface in contact with the grounding electrode of the transmission line, providing a cavity, connecting a waveguide to the cavity, and contacting the cavity In the high-frequency circuit device in which the grounding electrode of the transmission line directly above is removed,
A dielectric material having a relative dielectric constant lower than that of the dielectric substrate is filled inside the cavity from which a part of the ground metal casing directly under the surface in contact with the ground electrode of the transmission line is removed, and is hermetically sealed. age,
The dimension of the cavity from which a portion of the metal casing for grounding immediately below the surface in contact with the grounding electrode of the transmission line is removed and the dimension of the transmission line directly above the surface in contact with the cavity from which the grounding electrode is removed are derived. A high-frequency circuit device having a dimension obtained by multiplying a dimension of a wave tube by a reciprocal of a square root of a relative dielectric constant of the dielectric material having a low relative dielectric constant. A metal including a ground metal case, a transmission line of at least two layers of dielectric substrates and electrodes in contact with the inner side of the ground metal case, a semiconductor including a lumped constant element of a resistor, a capacitor, and an inductor; A surface having a lid, removing a part of the metal casing for grounding directly below the surface in contact with the grounding electrode of the transmission line, providing a cavity, connecting a waveguide to the cavity, and contacting the cavity In the high-frequency circuit device in which the grounding electrode of the transmission line directly above and a part of one or more dielectric substrates from at least the lowermost layer are removed,
The inside of all the cavities from which a part of the ground metal casing just below the surface in contact with the grounding electrode of the transmission line is removed, and the inside of all the cavities from which at least a part of one or more dielectric substrates are removed from the lowest layer And filled with a dielectric material having a relative dielectric constant lower than that of the dielectric substrate to form an airtight structure,
A dimension of a cavity obtained by removing a part of a ground metal casing directly below a surface in contact with the grounding electrode of the transmission line, a dimension of removing the grounding electrode of the transmission line immediately above the surface in contact with the cavity, and at least A dimension obtained by removing a part of one or more dielectric substrates from the lowest layer, and a dimension obtained by multiplying the dimension of the waveguide by the reciprocal of the square root of the dielectric constant of the dielectric material having a low relative dielectric constant. A high-frequency circuit device characterized by that.