JP2007004924A - 不揮発性メモリ装置、そのデータ書き込み方法 - Google Patents
不揮発性メモリ装置、そのデータ書き込み方法 Download PDFInfo
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- JP2007004924A JP2007004924A JP2005186161A JP2005186161A JP2007004924A JP 2007004924 A JP2007004924 A JP 2007004924A JP 2005186161 A JP2005186161 A JP 2005186161A JP 2005186161 A JP2005186161 A JP 2005186161A JP 2007004924 A JP2007004924 A JP 2007004924A
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- 238000000034 method Methods 0.000 title claims description 50
- 230000015654 memory Effects 0.000 claims abstract description 204
- 239000003990 capacitor Substances 0.000 claims description 68
- 230000008569 process Effects 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 3
- 230000010287 polarization Effects 0.000 description 83
- 238000010586 diagram Methods 0.000 description 36
- 230000007704 transition Effects 0.000 description 27
- 230000007423 decrease Effects 0.000 description 12
- 229910052720 vanadium Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000000717 retained effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009028 cell transition Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005186161A JP2007004924A (ja) | 2005-06-27 | 2005-06-27 | 不揮発性メモリ装置、そのデータ書き込み方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005186161A JP2007004924A (ja) | 2005-06-27 | 2005-06-27 | 不揮発性メモリ装置、そのデータ書き込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007004924A true JP2007004924A (ja) | 2007-01-11 |
| JP2007004924A5 JP2007004924A5 (enExample) | 2008-07-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2005186161A Withdrawn JP2007004924A (ja) | 2005-06-27 | 2005-06-27 | 不揮発性メモリ装置、そのデータ書き込み方法 |
Country Status (1)
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| JP (1) | JP2007004924A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8310876B2 (en) | 2009-04-17 | 2012-11-13 | Samsung Electronics Co., Ltd. | Methods of accessing storage devices |
| JP2013527949A (ja) * | 2010-03-22 | 2013-07-04 | クアルコム，インコーポレイテッド | 複数命令ストリームメモリシステム |
| CN106356451A (zh) * | 2015-07-16 | 2017-01-25 | 华邦电子股份有限公司 | 电阻式存储装置 |
| CN118335133A (zh) * | 2023-12-27 | 2024-07-12 | 张江国家实验室 | 一种基于铁电存储器的读写均衡电路、方法及铁电存储器 |
| US12361997B2 (en) | 2021-09-06 | 2025-07-15 | Kioxia Corporation | MTJ operation methods employing opposite polarity recovery pulse |
-
2005
- 2005-06-27 JP JP2005186161A patent/JP2007004924A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8310876B2 (en) | 2009-04-17 | 2012-11-13 | Samsung Electronics Co., Ltd. | Methods of accessing storage devices |
| KR101556779B1 (ko) | 2009-04-17 | 2015-10-02 | 삼성전자주식회사 | 저장 장치의 액세스 방법 |
| JP2013527949A (ja) * | 2010-03-22 | 2013-07-04 | クアルコム，インコーポレイテッド | 複数命令ストリームメモリシステム |
| US8867258B2 (en) | 2010-03-22 | 2014-10-21 | Qualcomm Incorporated | Memory cell that includes multiple non-volatile memories |
| CN106356451A (zh) * | 2015-07-16 | 2017-01-25 | 华邦电子股份有限公司 | 电阻式存储装置 |
| CN106356451B (zh) * | 2015-07-16 | 2019-01-11 | 华邦电子股份有限公司 | 电阻式存储装置 |
| US12361997B2 (en) | 2021-09-06 | 2025-07-15 | Kioxia Corporation | MTJ operation methods employing opposite polarity recovery pulse |
| CN118335133A (zh) * | 2023-12-27 | 2024-07-12 | 张江国家实验室 | 一种基于铁电存储器的读写均衡电路、方法及铁电存储器 |
| CN118335133B (zh) * | 2023-12-27 | 2025-02-14 | 张江国家实验室 | 一种基于铁电存储器的读写均衡电路、方法及铁电存储器 |
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Legal Events
| Date | Code | Title | Description |
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