JP2006525681A5 - - Google Patents

Download PDF

Info

Publication number
JP2006525681A5
JP2006525681A5 JP2006513437A JP2006513437A JP2006525681A5 JP 2006525681 A5 JP2006525681 A5 JP 2006525681A5 JP 2006513437 A JP2006513437 A JP 2006513437A JP 2006513437 A JP2006513437 A JP 2006513437A JP 2006525681 A5 JP2006525681 A5 JP 2006525681A5
Authority
JP
Japan
Prior art keywords
wavelength
laser
lasing
energy
lasing medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006513437A
Other languages
English (en)
Japanese (ja)
Other versions
JP4422720B2 (ja
JP2006525681A (ja
Filing date
Publication date
Priority claimed from US10/429,102 external-priority patent/US6891878B2/en
Application filed filed Critical
Publication of JP2006525681A publication Critical patent/JP2006525681A/ja
Publication of JP2006525681A5 publication Critical patent/JP2006525681A5/ja
Application granted granted Critical
Publication of JP4422720B2 publication Critical patent/JP4422720B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006513437A 2003-05-01 2004-04-29 アイセーフの固体レーザシステム Expired - Fee Related JP4422720B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/429,102 US6891878B2 (en) 2003-05-01 2003-05-01 Eye-safe solid state laser system and method
PCT/US2004/013241 WO2004100330A1 (en) 2003-05-01 2004-04-29 Eye-safe solid state laser system

Publications (3)

Publication Number Publication Date
JP2006525681A JP2006525681A (ja) 2006-11-09
JP2006525681A5 true JP2006525681A5 (enExample) 2007-06-14
JP4422720B2 JP4422720B2 (ja) 2010-02-24

Family

ID=33310547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006513437A Expired - Fee Related JP4422720B2 (ja) 2003-05-01 2004-04-29 アイセーフの固体レーザシステム

Country Status (5)

Country Link
US (1) US6891878B2 (enExample)
EP (1) EP1618634B1 (enExample)
JP (1) JP4422720B2 (enExample)
DE (1) DE602004019904D1 (enExample)
WO (1) WO2004100330A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7046710B2 (en) * 2003-08-28 2006-05-16 Raytheon Company Gain boost with synchronized multiple wavelength pumping in a solid-state laser
US7791739B2 (en) * 2004-04-20 2010-09-07 Lockheed Martin Corporation System and method to enable eye-safe laser ultrasound detection
US7248608B2 (en) * 2004-10-28 2007-07-24 United States Of America As Represented By The Department Of The Army Monoblock laser
US20060092992A1 (en) * 2004-10-28 2006-05-04 United States Army As Represented By The Dept Of The Army Monoblock Laser
US7729392B2 (en) * 2005-01-28 2010-06-01 Scientific Materials Corporation Monoblock laser with reflective substrate
US7817704B2 (en) * 2005-03-17 2010-10-19 Scientific Materials Corporation Monoblock laser with improved alignment features
FR2895841B1 (fr) * 2006-01-04 2009-12-04 Oxxius Sa "dispositif laser a seuil reduit"
US7839904B1 (en) 2006-01-26 2010-11-23 Scientific Materials Corporation Monoblock laser systems and methods
EP2074684B1 (en) * 2006-06-08 2016-03-23 Ramesh K. Shori Multi-wavelength pump method for improving performance of erbium-based lasers
US7633981B2 (en) * 2006-10-20 2009-12-15 Raytheon Company Reverse oxidation post-growth process for tailored gain profile in solid-state devices
DE102007044009A1 (de) * 2007-09-14 2009-03-19 Robert Bosch Gmbh Lasereinrichtung und Betriebsverfahren hierfür
DE102007044008A1 (de) * 2007-09-14 2009-03-19 Robert Bosch Gmbh Lasereinrichtung und Betriebsverfahren hierfür
FR2926932A1 (fr) * 2008-01-25 2009-07-31 Saint Louis Inst Procede d'emission d'un rayonnement laser pulse et source laser associee
US8432609B2 (en) * 2010-01-20 2013-04-30 Northrop Grumman Systems Corporation Photo-pumped semiconductor optical amplifier
EP2403079B1 (en) * 2010-06-30 2014-01-15 Alcatel Lucent Reflective semiconductor optical amplifier for optical networks
US8848759B1 (en) * 2011-03-29 2014-09-30 Lockheed Martin Corporation Power scaling of Er:YAG laser with 9xx nm pumping
TWI430527B (zh) * 2011-07-13 2014-03-11 Univ Nat Cheng Kung Q-切換引發之增益切換鉺脈衝雷射系統
US9312701B1 (en) * 2015-07-16 2016-04-12 Wi-Charge Ltd System for optical wireless power supply
US10020635B1 (en) 2016-04-15 2018-07-10 University Of Central Florida Research Foundation, Inc. Spectrometer device with stabilized laser and related devices and methods
US10355449B2 (en) 2016-08-15 2019-07-16 University Of Central Florida Research Foundation, Inc. Quantum cascade laser with angled active region and related methods
JP7548243B2 (ja) * 2019-11-28 2024-09-10 ソニーグループ株式会社 レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子
CN119787068B (zh) * 2024-12-31 2025-10-03 华中科技大学 一种产生人眼安全波段的飞秒碟片激光器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2668464B1 (fr) * 1990-10-25 1993-01-08 Commissariat Energie Atomique Silicates mixtes d'yttrium et de lanthanide et laser utilisant des monocristaux de ces silicates.
US5123026A (en) * 1990-11-02 1992-06-16 Massachusetts Institute Of Technology Frequency-doubled, diode-pumped ytterbium laser
US5227913A (en) * 1991-09-11 1993-07-13 Wisconsin Alumni Research Foundation Co-deposition of erbium and titanium into lithium niobate and optical amplifier produced thereby
JP3083688B2 (ja) * 1992-09-16 2000-09-04 三菱電機株式会社 固体レーザ装置
DE4345404C2 (de) * 1992-09-16 2001-04-26 Mitsubishi Electric Corp Verwendung eines Festkörperlasersystems zur Erzeugung eines Laserstrahls in einer Materialbearbeitungsvorrichtung
US5402434A (en) * 1992-10-07 1995-03-28 Nec Corporation Er:YVO4 laser oscillator, solid-state laser material and method for manufacturing the same
US5557624A (en) * 1995-01-20 1996-09-17 Hughes Aircraft Company Laser system using U-doped crystal Q-switch
DE19702681C2 (de) * 1997-01-25 1999-01-14 Lzh Laserzentrum Hannover Ev Nichtplanarer Ringlaser mit Güteschaltung im Einfrequenzbetrieb
US6373865B1 (en) 2000-02-01 2002-04-16 John E. Nettleton Pseudo-monolithic laser with an intracavity optical parametric oscillator
US6646793B2 (en) * 2000-12-14 2003-11-11 Raytheon Company High gain laser amplifier
AU2002316195A1 (en) * 2001-06-06 2003-01-08 Bae Systems Information Electronic Systems Integration Inc. Optical composite ion/host crystal gain elements

Similar Documents

Publication Publication Date Title
JP2006525681A5 (enExample)
EP0744089B1 (en) Passively q-switched picosecond microlaser
US8532151B2 (en) Passively Q-switched microlaser
EP1978611B1 (en) Q- switched microlaser apparatus and method for use
EP1500174B1 (en) Laser cavity pumping method and laser system thereof
KR101586119B1 (ko) 광학 증폭기 및 그 프로세스
JP4422720B2 (ja) アイセーフの固体レーザシステム
CN102918725A (zh) 超短脉冲微芯片激光器、半导体激光器、激光器系统和用于薄激光器介质的泵浦方法
US20030039274A1 (en) Method and apparatus for tissue treatment and modification
CN1645691A (zh) 主被动调q单纵模激光器
US6778563B2 (en) Q-switched laser
US7843975B2 (en) High-power fiber optic pulsed laser device
US6512630B1 (en) Miniature laser/amplifier system
Scholle et al. In-band pumping of high-power Ho: YAG lasers by laser diodes at 1.9 µm
JP2005039093A (ja) レーザ装置
US20100260211A1 (en) All-fiber staturable absorber Q-switched laser and method for producing staturable absorber Q-switched pulse
TW202215731A (zh) 高脈衝重複率拉曼雷射之優化條件
JP7511902B2 (ja) レーザ加工装置及びレーザ加工方法
CA2195597C (en) Diode-pumped laser system using uranium-doped q-switch
Terekhov et al. Cr-ZnSe Passively Q-switched fiber-bulk Ho: YAG hybrid laser
Moskalev et al. Efficient Ho: YAG laser resonantly pumped by Tm-fiber laser
Lavi et al. High-efficiency 880nm diode direct-pumping of Nd: YVO4 grazing incidence oscillators
US20180041002A1 (en) GaN PUMPED RUBY LASER
TW200924329A (en) Passive type all-optical-fiber Q-switched laser
Kisel et al. Efficient self-frequency Raman conversion in a passively Q-switched diode-pumped Yb: KGd (WO4) 2 laser