JP2006525681A - アイセーフの固体レーザシステム - Google Patents
アイセーフの固体レーザシステム Download PDFInfo
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- JP2006525681A JP2006525681A JP2006513437A JP2006513437A JP2006525681A JP 2006525681 A JP2006525681 A JP 2006525681A JP 2006513437 A JP2006513437 A JP 2006513437A JP 2006513437 A JP2006513437 A JP 2006513437A JP 2006525681 A JP2006525681 A JP 2006525681A
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- laser
- wavelength
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- lasing medium
- eye
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0612—Non-homogeneous structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
- H01S3/0809—Two-wavelenghth emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
Description
N=(f1f3−f2f4)/(f1+f2) (式1)
Er:YAGにおけるこの最大の反転密度は例えば1540nmのポンプ波長で約0.1NTであることがわかった。
Claims (10)
- ポンプ光駆動される固体アイセーフレーザにおいて、
第1の波長でレーザエネルギを発生するように動作する第1のレージング媒体(50)と、
前記第1のレージング媒体(50)と整列され、それによって前記第1の波長のエネルギをそこで反射的に維持するために第1の共振空洞(64)を規定し、第2の波長でレーザエネルギを発生するように動作する第2のレージング媒体(56)と、
前記第1のレージング媒体(50)と前記第2のレージング媒体(56)との間に配置され、前記第1の波長で透過性であり、前記第2の波長で反射性であり、それによって前記第2のレージング媒体(56)内で前記第2の波長を反射的に維持するための第2の空洞(62)を規定している透過/反射層と、
前記透過/反射層と反対側の前記第2のレージング媒体(56)の端部に配置され、前記第2の波長のエネルギが前記第2の空洞(62)を出ることを可能にする出力結合器(58)とを具備しているレーザ。 - 前記第1のレージング媒体(50)はネオジムイオンドープされたイットリウムアルミニウムガーネットであり、ポンプ光波長は約800ナノメータである請求項1記載のレーザ。
- 前記第1のレージング媒体(50)はイッテルビウムイオンドープされたイットリウムアルミニウムガーネットであり、ポンプ光波長は約940ナノメータである請求項1記載のレーザ。
- 前記第2のレージング媒体(56)はエルビウムイオンドープされた結晶またはエルビウムイオンドープされたイットリウムアルミニウムガーネットである請求項1記載のレーザ。
- 前記第2のレージング媒体(56)は次の材料、Sc2SiO7、Sc2SiO5、Y2SiO5、Ca2Al2SiO7、YVO4またはBeAL2O4またはガラスのようなアモルファス材料を含む類似の材料の1つから選択されたエルビウムイオンドープされたホスト材料である請求項1記載のレーザ。
- 前記第2の波長は約1.4ミクロン乃至1.8ミクロンの範囲である請求項1記載のレーザ。
- ポンプ光エネルギはパルスで与えられる請求項1記載のレーザ。
- 前記Qスイッチ(58)はコバルト結晶Qスイッチまたは類似の飽和可能な吸収性Qスイッチである請求項12記載のレーザ。
- さらに、前記透過/反射層から前記第1のレージング媒体(50)の反対側の端部に位置する前記第1の波長で反射性である誘電体被覆を具備している請求項1記載のレーザ。
- さらに、前記第1の波長で反射性であり、前記第2の波長で透過性であり、前記第2のレージング媒体(56)と前記出力結合器(58)との間に配置されている誘電体被覆を具備している請求項1記載のレーザ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/429,102 US6891878B2 (en) | 2003-05-01 | 2003-05-01 | Eye-safe solid state laser system and method |
PCT/US2004/013241 WO2004100330A1 (en) | 2003-05-01 | 2004-04-29 | Eye-safe solid state laser system |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006525681A true JP2006525681A (ja) | 2006-11-09 |
JP2006525681A5 JP2006525681A5 (ja) | 2007-06-14 |
JP4422720B2 JP4422720B2 (ja) | 2010-02-24 |
Family
ID=33310547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006513437A Expired - Fee Related JP4422720B2 (ja) | 2003-05-01 | 2004-04-29 | アイセーフの固体レーザシステム |
Country Status (5)
Country | Link |
---|---|
US (1) | US6891878B2 (ja) |
EP (1) | EP1618634B1 (ja) |
JP (1) | JP4422720B2 (ja) |
DE (1) | DE602004019904D1 (ja) |
WO (1) | WO2004100330A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021192430A (ja) * | 2015-07-16 | 2021-12-16 | ワイ−チャージ リミテッド | 電力を無線で伝送するシステム |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US7046710B2 (en) * | 2003-08-28 | 2006-05-16 | Raytheon Company | Gain boost with synchronized multiple wavelength pumping in a solid-state laser |
US7791739B2 (en) * | 2004-04-20 | 2010-09-07 | Lockheed Martin Corporation | System and method to enable eye-safe laser ultrasound detection |
US20060092992A1 (en) * | 2004-10-28 | 2006-05-04 | United States Army As Represented By The Dept Of The Army | Monoblock Laser |
US7248608B2 (en) * | 2004-10-28 | 2007-07-24 | United States Of America As Represented By The Department Of The Army | Monoblock laser |
US7729392B2 (en) * | 2005-01-28 | 2010-06-01 | Scientific Materials Corporation | Monoblock laser with reflective substrate |
US7817704B2 (en) * | 2005-03-17 | 2010-10-19 | Scientific Materials Corporation | Monoblock laser with improved alignment features |
FR2895841B1 (fr) * | 2006-01-04 | 2009-12-04 | Oxxius Sa | "dispositif laser a seuil reduit" |
US7839904B1 (en) | 2006-01-26 | 2010-11-23 | Scientific Materials Corporation | Monoblock laser systems and methods |
US7633990B2 (en) * | 2006-06-08 | 2009-12-15 | Shori Ramesh K | Multi-wavelength pump method for improving performance of erbium-based lasers |
US7633981B2 (en) * | 2006-10-20 | 2009-12-15 | Raytheon Company | Reverse oxidation post-growth process for tailored gain profile in solid-state devices |
DE102007044009A1 (de) * | 2007-09-14 | 2009-03-19 | Robert Bosch Gmbh | Lasereinrichtung und Betriebsverfahren hierfür |
DE102007044008A1 (de) * | 2007-09-14 | 2009-03-19 | Robert Bosch Gmbh | Lasereinrichtung und Betriebsverfahren hierfür |
FR2926932A1 (fr) * | 2008-01-25 | 2009-07-31 | Saint Louis Inst | Procede d'emission d'un rayonnement laser pulse et source laser associee |
US8432609B2 (en) * | 2010-01-20 | 2013-04-30 | Northrop Grumman Systems Corporation | Photo-pumped semiconductor optical amplifier |
EP2403079B1 (en) * | 2010-06-30 | 2014-01-15 | Alcatel Lucent | Reflective semiconductor optical amplifier for optical networks |
US8848759B1 (en) * | 2011-03-29 | 2014-09-30 | Lockheed Martin Corporation | Power scaling of Er:YAG laser with 9xx nm pumping |
TWI430527B (zh) * | 2011-07-13 | 2014-03-11 | Univ Nat Cheng Kung | Q-切換引發之增益切換鉺脈衝雷射系統 |
US10020635B1 (en) | 2016-04-15 | 2018-07-10 | University Of Central Florida Research Foundation, Inc. | Spectrometer device with stabilized laser and related devices and methods |
US10355449B2 (en) | 2016-08-15 | 2019-07-16 | University Of Central Florida Research Foundation, Inc. | Quantum cascade laser with angled active region and related methods |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2668464B1 (fr) * | 1990-10-25 | 1993-01-08 | Commissariat Energie Atomique | Silicates mixtes d'yttrium et de lanthanide et laser utilisant des monocristaux de ces silicates. |
US5123026A (en) * | 1990-11-02 | 1992-06-16 | Massachusetts Institute Of Technology | Frequency-doubled, diode-pumped ytterbium laser |
US5227913A (en) * | 1991-09-11 | 1993-07-13 | Wisconsin Alumni Research Foundation | Co-deposition of erbium and titanium into lithium niobate and optical amplifier produced thereby |
JP3083688B2 (ja) * | 1992-09-16 | 2000-09-04 | 三菱電機株式会社 | 固体レーザ装置 |
DE4345434C2 (de) * | 1992-09-16 | 2000-03-02 | Mitsubishi Electric Corp | Verwendung eines Festkörperlasersystems zur Erzeugung eines Laserstrahls in einer Laserbearbeitungsvorrichtung |
US5402434A (en) * | 1992-10-07 | 1995-03-28 | Nec Corporation | Er:YVO4 laser oscillator, solid-state laser material and method for manufacturing the same |
US5557624A (en) * | 1995-01-20 | 1996-09-17 | Hughes Aircraft Company | Laser system using U-doped crystal Q-switch |
DE19702681C2 (de) * | 1997-01-25 | 1999-01-14 | Lzh Laserzentrum Hannover Ev | Nichtplanarer Ringlaser mit Güteschaltung im Einfrequenzbetrieb |
US6373865B1 (en) | 2000-02-01 | 2002-04-16 | John E. Nettleton | Pseudo-monolithic laser with an intracavity optical parametric oscillator |
US6646793B2 (en) * | 2000-12-14 | 2003-11-11 | Raytheon Company | High gain laser amplifier |
AU2002316195A1 (en) * | 2001-06-06 | 2003-01-08 | Bae Systems Information Electronic Systems Integration Inc. | Optical composite ion/host crystal gain elements |
-
2003
- 2003-05-01 US US10/429,102 patent/US6891878B2/en not_active Expired - Lifetime
-
2004
- 2004-04-29 DE DE602004019904T patent/DE602004019904D1/de not_active Expired - Lifetime
- 2004-04-29 JP JP2006513437A patent/JP4422720B2/ja not_active Expired - Fee Related
- 2004-04-29 WO PCT/US2004/013241 patent/WO2004100330A1/en active Application Filing
- 2004-04-29 EP EP04750911A patent/EP1618634B1/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021192430A (ja) * | 2015-07-16 | 2021-12-16 | ワイ−チャージ リミテッド | 電力を無線で伝送するシステム |
JP7277519B2 (ja) | 2015-07-16 | 2023-05-19 | ワイ-チャージ リミテッド | 電力を無線で伝送するシステム |
Also Published As
Publication number | Publication date |
---|---|
JP4422720B2 (ja) | 2010-02-24 |
EP1618634B1 (en) | 2009-03-11 |
US20040218652A1 (en) | 2004-11-04 |
US6891878B2 (en) | 2005-05-10 |
EP1618634A1 (en) | 2006-01-25 |
DE602004019904D1 (de) | 2009-04-23 |
WO2004100330A1 (en) | 2004-11-18 |
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