JP2006517175A5 - - Google Patents

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Publication number
JP2006517175A5
JP2006517175A5 JP2006502792A JP2006502792A JP2006517175A5 JP 2006517175 A5 JP2006517175 A5 JP 2006517175A5 JP 2006502792 A JP2006502792 A JP 2006502792A JP 2006502792 A JP2006502792 A JP 2006502792A JP 2006517175 A5 JP2006517175 A5 JP 2006517175A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006502792A
Other languages
Japanese (ja)
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JP2006517175A (ja
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Publication date
Priority claimed from SE0300352A external-priority patent/SE0300352D0/xx
Application filed filed Critical
Publication of JP2006517175A publication Critical patent/JP2006517175A/ja
Publication of JP2006517175A5 publication Critical patent/JP2006517175A5/ja
Pending legal-status Critical Current

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JP2006502792A 2003-02-06 2004-02-06 強磁性材料 Pending JP2006517175A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0300352A SE0300352D0 (sv) 2003-02-06 2003-02-06 Ferromagnetism in semiconductors
PCT/SE2004/000150 WO2004069767A1 (en) 2003-02-06 2004-02-06 Ferromagnetic material

Publications (2)

Publication Number Publication Date
JP2006517175A JP2006517175A (ja) 2006-07-20
JP2006517175A5 true JP2006517175A5 (enExample) 2007-02-01

Family

ID=20290360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502792A Pending JP2006517175A (ja) 2003-02-06 2004-02-06 強磁性材料

Country Status (9)

Country Link
US (1) US7527983B2 (enExample)
EP (1) EP1601629B1 (enExample)
JP (1) JP2006517175A (enExample)
KR (1) KR20050110627A (enExample)
CN (1) CN100430335C (enExample)
AT (1) ATE395312T1 (enExample)
DE (1) DE602004013735D1 (enExample)
SE (1) SE0300352D0 (enExample)
WO (1) WO2004069767A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0300352D0 (sv) * 2003-02-06 2003-02-06 Winto Konsult Ab Ferromagnetism in semiconductors
TWI237314B (en) * 2004-06-24 2005-08-01 Ind Tech Res Inst Doping method for forming quantum dots
CN103194798B (zh) * 2013-04-02 2015-08-26 浙江大学 一种过渡金属掺杂ZnO基铁磁多晶薄膜及其制备方法
KR101661025B1 (ko) * 2014-09-03 2016-09-29 한국세라믹기술원 반도성 세라믹스 조성물의 제조방법 및 그의 세라믹스 기판
US9966901B2 (en) * 2015-11-19 2018-05-08 Samsung Electronics Co., Ltd. Spin-torque oscillator based on easy-cone anisotropy
CN111809158A (zh) * 2020-07-22 2020-10-23 延安大学 一种过渡金属掺杂ZnO纳米线阵列、制备方法及其应用
CN113308669B (zh) * 2021-04-26 2023-06-23 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种Mn掺杂ZnO稀磁半导体薄膜的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3953238B2 (ja) * 1999-09-01 2007-08-08 独立行政法人科学技術振興機構 強磁性p型単結晶酸化亜鉛およびその製造方法
JP4365495B2 (ja) * 1999-10-29 2009-11-18 ローム株式会社 遷移金属を含有する強磁性ZnO系化合物およびその強磁性特性の調整方法
CN1313656C (zh) * 2001-03-02 2007-05-02 独立行政法人科学技术振兴机构 Ⅱ-ⅵ族或ⅲ-ⅴ族系单结晶铁磁性化合物及其铁磁性特性的调整方法
JP2003298139A (ja) * 2002-03-29 2003-10-17 Alps Electric Co Ltd 磁気検出素子
SE0300352D0 (sv) * 2003-02-06 2003-02-06 Winto Konsult Ab Ferromagnetism in semiconductors
SE528394C2 (sv) * 2004-05-18 2006-11-07 Nm Spintronics Ab Mangandopade magnetiska halvledare
SE528900C2 (sv) * 2004-05-18 2007-03-13 Nm Spintronics Ab Koppardopade magnetiska halvledare
JP2006139854A (ja) * 2004-11-12 2006-06-01 Sony Corp 情報記録装置、情報記録方法

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