JP2006508420A - ブロックで消去可能なメモリの管理データレコードの再生方法。 - Google Patents
ブロックで消去可能なメモリの管理データレコードの再生方法。 Download PDFInfo
- Publication number
- JP2006508420A JP2006508420A JP2004514740A JP2004514740A JP2006508420A JP 2006508420 A JP2006508420 A JP 2006508420A JP 2004514740 A JP2004514740 A JP 2004514740A JP 2004514740 A JP2004514740 A JP 2004514740A JP 2006508420 A JP2006508420 A JP 2006508420A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- entry
- reconfiguration
- data record
- management data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7201—Logical to physical mapping or translation of blocks or pages
Abstract
Description
Claims (9)
- セクタで記述されかつブロックで消去可能な不揮発性メモリの管理データレコードを再生する方法であって、データレコードが、付属するメモリコントローラの一層早くアクセス可能な内部揮発性フラグメモリに保持されるものにおいて、不揮発性メモリの1つ又は複数のメモリブロックにおいて、再構成表(RKT)が連続して実現され、この再構成表において、不揮発性メモリにおけるすべての記述操作及び消去操作が、メモリコントローラの内部フラグメモリの管理データレコードが電源異常後再始動毎に完全に再構成されるような規模で、エントリとして記録されることを特徴とする、方法。
- 再構成表(RKT)における各エントリが、セクタ又はセクタ部分の長さであることを特徴とする、請求項1に記載の方法。
- データのレコードの再構成の際再度電源異常があると、フラグメモリの管理データ記録の再構成が反覆されることを特徴とする、請求項1に記載の方法。
- 再構成表の所定の充填状態に達する毎に、管理データレコードの所定の基本状態を確立するための再編成が、フラグメモリ及び再構成表(RKT)において開始され、再編成のこの開始が最後のエントリ(OE)として再構成表(RKT)に記録されることを特徴とする、請求項1に記載の方法。
- 再編成に成功した毎に、各最終エントリの際上昇計数されるカウンタ(FZ)を含む最終エントリが行われることを特徴とする、請求項4に記載の方法。
- 再編成に成功した後再構成表(RKT)の新たな設立のため、今まで使用されたメモリブロックが消去のためバックグラウンドプログラムにおいて使用可能にされ、まだ消去されているブロックが初期化されることを特徴とする、請求項5に記載の方法。
- 再構成表(RKT)における最初のエントリが最終エントリ(FE)であることを特徴とする、請求項5に記載の方法。
- フラグメモリにおける管理データレコードの一部として、不揮発性メモリにあるブロックポインタ表(BZT)に含まれている無効ブロックポインタ用の表(ZZT)が使われることを特徴とする、請求項1に記載の方法。
- 再編成の際、無効ブロックポインタ用の表により、ブロックポインタ表(BZT)が実現されることを特徴とする、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10227255A DE10227255B4 (de) | 2002-06-19 | 2002-06-19 | Verfahren zur Wiederherstellung von Verwaltungsdatensätzen eines blockweise löschbaren Speichers |
PCT/EP2003/006355 WO2004001579A1 (de) | 2002-06-19 | 2003-06-17 | Verfahren zur wiederherstellung von verwaltungsdatensätzen eines blockweise löschbaren speichers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006508420A true JP2006508420A (ja) | 2006-03-09 |
JP2006508420A5 JP2006508420A5 (ja) | 2006-07-06 |
JP4217909B2 JP4217909B2 (ja) | 2009-02-04 |
Family
ID=29723253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004514740A Expired - Fee Related JP4217909B2 (ja) | 2002-06-19 | 2003-06-17 | ブロックで消去可能なメモリの管理データレコードの再生方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20060156078A1 (ja) |
EP (1) | EP1514171B1 (ja) |
JP (1) | JP4217909B2 (ja) |
CN (1) | CN1311327C (ja) |
AT (1) | ATE344486T1 (ja) |
AU (1) | AU2003249848A1 (ja) |
CA (1) | CA2489065A1 (ja) |
DE (2) | DE10227255B4 (ja) |
WO (1) | WO2004001579A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7966462B2 (en) * | 1999-08-04 | 2011-06-21 | Super Talent Electronics, Inc. | Multi-channel flash module with plane-interleaved sequential ECC writes and background recycling to restricted-write flash chips |
EP2977906A1 (en) * | 2004-04-28 | 2016-01-27 | Panasonic Corporation | Nonvolatile storage device and data write method |
WO2006024328A1 (de) * | 2004-09-02 | 2006-03-09 | Hyperstone Ag | Verfahren zur verwaltung von speicherinformationen |
KR100843543B1 (ko) | 2006-10-25 | 2008-07-04 | 삼성전자주식회사 | 플래시 메모리 장치를 포함하는 시스템 및 그것의 데이터복구 방법 |
EP2043105A1 (de) * | 2007-09-26 | 2009-04-01 | Siemens Aktiengesellschaft | Kopierverfahren für NAND-Flash-Speicher |
WO2009143885A1 (de) * | 2008-05-28 | 2009-12-03 | Hyperstone Gmbh | Verfahren zum adressieren von seitenorientierten nichtflüchtigen speichern |
US8984238B2 (en) * | 2009-02-05 | 2015-03-17 | Spansion Llc | Fractured erase system and method |
KR102050725B1 (ko) | 2012-09-28 | 2019-12-02 | 삼성전자 주식회사 | 컴퓨팅 시스템 및 컴퓨팅 시스템의 데이터 관리 방법 |
FR2997208B1 (fr) * | 2012-10-19 | 2016-01-15 | Continental Automotive France | Procede de gestion d'une memoire flash |
US9690642B2 (en) | 2012-12-18 | 2017-06-27 | Western Digital Technologies, Inc. | Salvaging event trace information in power loss interruption scenarios |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2256735B (en) * | 1991-06-12 | 1995-06-21 | Intel Corp | Non-volatile disk cache |
JP2856621B2 (ja) * | 1993-02-24 | 1999-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置 |
JP3507132B2 (ja) * | 1994-06-29 | 2004-03-15 | 株式会社日立製作所 | フラッシュメモリを用いた記憶装置およびその記憶制御方法 |
GB9903490D0 (en) * | 1999-02-17 | 1999-04-07 | Memory Corp Plc | Memory system |
US6104638A (en) * | 1999-02-26 | 2000-08-15 | Hewlett-Packard Company | Use of erasable non-volatile memory for storage of changing information |
US6427186B1 (en) * | 1999-03-30 | 2002-07-30 | Frank (Fong-Long) Lin | Memory, interface system and method for mapping logical block numbers to physical sector numbers in a flash memory, using a master index table and a table of physical sector numbers |
JP3797649B2 (ja) * | 1999-05-31 | 2006-07-19 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US6377500B1 (en) * | 1999-11-11 | 2002-04-23 | Kabushiki Kaisha Toshiba | Memory system with a non-volatile memory, having address translating function |
US6539402B1 (en) * | 2000-02-22 | 2003-03-25 | Unisys Corporation | Using periodic spaces of block ID to improve additional recovery |
JP4027281B2 (ja) * | 2002-07-10 | 2007-12-26 | キヤノン株式会社 | インクジェット記録ヘッド |
-
2002
- 2002-06-19 DE DE10227255A patent/DE10227255B4/de not_active Expired - Fee Related
-
2003
- 2003-06-17 AU AU2003249848A patent/AU2003249848A1/en not_active Abandoned
- 2003-06-17 JP JP2004514740A patent/JP4217909B2/ja not_active Expired - Fee Related
- 2003-06-17 WO PCT/EP2003/006355 patent/WO2004001579A1/de active IP Right Grant
- 2003-06-17 CA CA002489065A patent/CA2489065A1/en not_active Abandoned
- 2003-06-17 US US10/518,636 patent/US20060156078A1/en not_active Abandoned
- 2003-06-17 AT AT03760627T patent/ATE344486T1/de not_active IP Right Cessation
- 2003-06-17 DE DE50305585T patent/DE50305585D1/de not_active Expired - Lifetime
- 2003-06-17 EP EP03760627A patent/EP1514171B1/de not_active Expired - Lifetime
- 2003-06-17 CN CNB038141930A patent/CN1311327C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1514171A1 (de) | 2005-03-16 |
AU2003249848A1 (en) | 2004-01-06 |
JP4217909B2 (ja) | 2009-02-04 |
DE10227255A1 (de) | 2004-01-15 |
DE10227255B4 (de) | 2008-06-26 |
ATE344486T1 (de) | 2006-11-15 |
CN1311327C (zh) | 2007-04-18 |
DE50305585D1 (de) | 2006-12-14 |
CA2489065A1 (en) | 2003-12-31 |
WO2004001579A1 (de) | 2003-12-31 |
EP1514171B1 (de) | 2006-11-02 |
US20060156078A1 (en) | 2006-07-13 |
CN1662873A (zh) | 2005-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10078449B2 (en) | Flash memory architecture with separate storage of overhead and user data | |
US6865658B2 (en) | Nonvolatile data management system using data segments and link information | |
US6725321B1 (en) | Memory system | |
JP4122972B2 (ja) | データ記録装置及びフラッシュメモリに対するデータ書き込み方法 | |
KR100644602B1 (ko) | 플래시메모리를 위한 재사상 제어방법 및 그에 따른플래시 메모리의 구조 | |
US7624239B2 (en) | Methods for the management of erase operations in non-volatile memories | |
US7783845B2 (en) | Structures for the management of erase operations in non-volatile memories | |
US8046530B2 (en) | Process and method for erase strategy in solid state disks | |
US5907854A (en) | Flash memory file system for writing data files without rewriting an entire volume | |
JP4217909B2 (ja) | ブロックで消去可能なメモリの管理データレコードの再生方法 | |
KR20010037155A (ko) | 플래시 파일 시스템 | |
JP2005196609A (ja) | 情報記録フォーマットおよび情報記録媒体 | |
JP2007534048A (ja) | ブロック毎に消去可能なメモリにおいてメモリセクタを書込む方法 | |
US20050149493A1 (en) | Data recording apparatus and data recording method | |
JP2012068765A (ja) | メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法 | |
JP2009276883A (ja) | 半導体補助記憶装置 | |
US11500775B2 (en) | File system management in memory device | |
JPH07160439A (ja) | データ記憶装置及び主制御装置 | |
JP5707695B2 (ja) | フラッシュディスク装置 | |
KR20050024322A (ko) | 블록 단위로 소거될 수 있는 메모리의 관리 데이터레코드를 복원하는 방법 | |
CN110597454A (zh) | 数据储存装置以及非挥发式存储器控制方法 | |
JP2004126945A (ja) | 記憶装置及びその制御方法 | |
JP2010026794A (ja) | メモリ制御装置及び方法、コンピュータプログラム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060323 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060323 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080516 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20081014 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20081028 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111121 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |