JP2006351164A - Sputtering target, magnetic recording medium, method of manufacturing magnetic recording medium - Google Patents
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000000654 additive Substances 0.000 claims abstract description 74
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 66
- 230000000996 additive effect Effects 0.000 claims abstract description 64
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 52
- 239000010941 cobalt Substances 0.000 claims abstract description 52
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000010931 gold Substances 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 30
- 230000009467 reduction Effects 0.000 claims abstract description 23
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 239000011651 chromium Substances 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000005204 segregation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 28
- 239000002245 particle Substances 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 19
- 239000000956 alloy Substances 0.000 description 19
- 238000000926 separation method Methods 0.000 description 19
- 229910018979 CoPt Inorganic materials 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000000889 atomisation Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000006249 magnetic particle Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910019222 CoCrPt Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910020637 Co-Cu Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- SQWDWSANCUIJGW-UHFFFAOYSA-N cobalt silver Chemical compound [Co].[Ag] SQWDWSANCUIJGW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- RYTYSMSQNNBZDP-UHFFFAOYSA-N cobalt copper Chemical compound [Co].[Cu] RYTYSMSQNNBZDP-UHFFFAOYSA-N 0.000 description 1
- SFOSJWNBROHOFJ-UHFFFAOYSA-N cobalt gold Chemical compound [Co].[Au] SFOSJWNBROHOFJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
本発明は、スパッタターゲット、このスパッタターゲットを用いて形成した薄膜磁気記録媒体及びこの薄膜磁気記録媒体の製造方法に関し、より詳しくは、改善された冶金学的特性を有する合金組成からなるスパッタターゲット、このスパッタターゲットでスパッタ成膜された磁気記録媒体及びこの磁気記録媒体の製造方法に関する。 The present invention relates to a sputter target, a thin film magnetic recording medium formed using the sputter target, and a method of manufacturing the thin film magnetic recording medium, and more particularly, a sputter target composed of an alloy composition having improved metallurgical properties, The present invention relates to a magnetic recording medium formed by sputtering with this sputter target and a method for manufacturing the magnetic recording medium.
直流(DC)マグネトロンスパッタリングプロセスは、例えば半導体表面を被覆したり、磁気記録媒体の表面に膜を形成したりするような、精密に制御された厚さ及び原子比の狭い公差内の薄膜材料付着物を基板上に形成する種々の分野に用いられている。1つの共通の構成として、ターゲットの背面に磁石を配置することにより長円形状の磁場をスパッタターゲットに与える。これにより、電子が、スパッタリングターゲット近傍で捕捉され、アルゴンイオンの生成を改善し、スパッタリング速度を増加させる。このプラズマ内のイオンはスパッタターゲット表面に衝突してスパッタターゲットがその表面から原子を放出する。陰極のスパッタターゲットと被覆される陽極の基板との間の電圧差で、放出された原子が基板表面に所望の膜を形成する。 A direct current (DC) magnetron sputtering process can be applied to thin film materials with tightly controlled thickness and narrow atomic ratio tolerances, such as coating semiconductor surfaces or forming films on the surface of magnetic recording media. It is used in various fields for forming a kimono on a substrate. As one common configuration, an elliptical magnetic field is applied to the sputter target by disposing a magnet on the back surface of the target. This traps electrons in the vicinity of the sputtering target, improving the production of argon ions and increasing the sputtering rate. The ions in the plasma collide with the surface of the sputter target, and the sputter target releases atoms from the surface. Due to the voltage difference between the cathode sputter target and the anode substrate to be coated, the emitted atoms form the desired film on the substrate surface.
反応性スパッタリングプロセスにおいては、真空チャンバは、化学的に活性なガス雰囲気にあり、スパッタによりスパッタターゲットから飛び出した物質は、混合ガス内の反応性の種と化学的に反応して所望の膜を形成する化合物を形成する。 In the reactive sputtering process, the vacuum chamber is in a chemically active gas atmosphere, and the material ejected from the sputtering target by sputtering chemically reacts with the reactive species in the mixed gas to form a desired film. Form the compound to be formed.
従来の磁気記録媒体の製造時には、夫々が異なる材料の複数のスパッタターゲットにより、複数の薄膜層が順次基板上にスパッタされ、その結果、薄膜の付着物が積層されるものである。図6は、従来の磁気記録媒体の一般的な薄膜積層構造を示す。積層構造の底部に、一般的にアルミニウム或いはガラスの非磁性基板101がある。最初の付着層であるシード層102は、上層の粒状組織の形態及び方位を規定し、普通はNiP或いはNiAlからなる。次に、しばしば1つから3つの個別の層からなる非磁性の下地層104が付着される。下地層104は、一般的にCrMo或いはCrTiのようなクロムを主成分とする合金である。1つ或いは2つの別々な層からなる中間層105は下地層104の上に形成され、コバルトを主成分としわずかに磁性を有する。2つ或いは3つの別層からなる磁気データ記録層106は中間層105の上に付着され、更に、カーボン潤滑層108が磁気データ記録層106の上に形成される。
In manufacturing a conventional magnetic recording medium, a plurality of thin film layers are sequentially sputtered onto a substrate by a plurality of sputter targets, each of which is made of a different material, and as a result, thin film deposits are stacked. FIG. 6 shows a general thin film laminated structure of a conventional magnetic recording medium. A
磁気記録媒体の単位面積当たりの記録可能なデータ量は、データ記録層の冶金学的な特性及び組成に直接的に関係し、同様に、データ記録層をスパッタ成膜するスパッタターゲット材に関係する。データ記録容量を今後とも増大させていくためには、従来の長手磁気記録(LMR)に対抗して垂直磁気記録(PMR)として知られる技術は、軟磁性下地層と組み合わせて垂直単磁極記録ヘッドを使用することにより高い書込み効率を示すために、磁気データ記録産業にとって最も有望且つ有効な技術となっている。PMRを用いると、ビットは磁気記録媒体面に対して垂直に記録され、ビットサイズを小さくしながら保磁力を大きくさせることが可能である。故に、将来的には、PMRは、ディスクの保磁力を増大し、信号増幅を増強することが期待され、優れた記録文書のデータ保持が可能になる。 The amount of data that can be recorded per unit area of the magnetic recording medium is directly related to the metallurgical characteristics and composition of the data recording layer, and similarly to the sputter target material on which the data recording layer is sputtered. . In order to increase the data recording capacity in the future, a technique known as perpendicular magnetic recording (PMR) in contrast to conventional longitudinal magnetic recording (LMR) is a perpendicular single pole recording head combined with a soft magnetic underlayer. The high writing efficiency by using, has become the most promising and effective technology for the magnetic data recording industry. When PMR is used, the bits are recorded perpendicular to the magnetic recording medium surface, and the coercive force can be increased while reducing the bit size. Therefore, in the future, the PMR is expected to increase the coercive force of the disk and enhance the signal amplification, and it will be possible to retain excellent recorded document data.
PMR媒体の高記録密度を達成するために、熱安定性を高め、媒体雑音特性を下げる必要がある。PMR媒体に要求される本質的な熱安定性と媒体雑音特性を実現するための1つの技術は、高い磁気結晶異方性を有する磁気領域を備えた粒状磁気媒体を提供することであり、構造的、磁気的及び電気的に分離した母材に微粒のミクロ組織を十分に封じ込めることである。この目的を達成するために、比較的大きな原子半径とコバルトに対して十分な固溶度を持つ成分が、保磁力を増強するために添加されてきた。 In order to achieve the high recording density of PMR media, it is necessary to increase thermal stability and reduce media noise characteristics. One technique for achieving the essential thermal stability and media noise characteristics required for PMR media is to provide a granular magnetic media with a magnetic region having high magnetocrystalline anisotropy, It is to sufficiently contain the fine microstructure in the base material separated from each other mechanically, magnetically and electrically. In order to achieve this goal, components with a relatively large atomic radius and sufficient solid solubility in cobalt have been added to enhance the coercivity.
従来のLMRによって実現された異方性エネルギの増強に加えて、PMRは、十分な粒子間分離性を有し、磁気領域間のクロストーク(cross−talk)がごくわずかである、非常に細かい粒子のミクロ組織を要求する。磁気相内への固溶度が無視できるほどわずかであることから、粒界に析出される化学量論酸化物を含んだ酸素の豊富な粒界領域を含むことは、粒子の微粒化を著しく改善し、優れたミクロ組織的、磁気的及び電気的な分離性を提供する。上述及びその他の従来技術は、CoPtCrO,CoPtCr−SiO2或いはCoPtTa2O5からなる磁気記録媒体のような酸素含有磁気記録媒体において、十分に分離された粒子組織を実現し、大きな磁気異方性エネルギ(Ku)値の著しい改善を実現する。 In addition to the enhancement of anisotropic energy achieved by conventional LMR, PMR is very fine with sufficient interparticle separation and negligible cross-talk between magnetic domains. Requires the microstructure of the particles. Inclusion of oxygen-rich grain boundary regions with stoichiometric oxides precipitated at the grain boundaries significantly reduces the atomization of the particles, as the solid solubility in the magnetic phase is negligible. Improves and provides excellent microstructural, magnetic and electrical separation. The above-mentioned and other conventional techniques realize a sufficiently separated grain structure in an oxygen-containing magnetic recording medium such as a magnetic recording medium made of CoPtCrO, CoPtCr—SiO 2 or CoPtTa 2 O 5 , and have a large magnetic anisotropy. A significant improvement in energy (Ku) value is achieved.
粒状磁気媒体の微粒化によって磁気双極子安定性の限界に近づくので、十分な粒子間分離性は、各々の粒子が隣接粒子によって影響を受けないように確立されなければならず、また、磁気結晶異方性を増大しなければならない。粒界への酸素の導入は、更に磁気粒子を封入することでより良い信号対雑音比(SNR)特性を提供することが観察されているが、これら所望の特性を達成するために従来技術では、媒体用途について、SiO2,Y2O3,Al2O3,TiO2,Ta2O5,Nb2O5のような単一成分酸化物を使用する。最近の研究から、CoPt,CoPtCr,CoPtB及び/又はCoPtCrBを含有する粒状磁気媒体において、反応的スパッタリング及び/又は単一酸化物含有スパッタターゲットにより取り入れた酸素の効果が有益であることが証明された。この技術は、十分に分離した粒子構造の実現について著しい改善を示した。しかしながら、これら酸化物は、PMR媒体のSNR及び熱安定性に関して最良の粒状媒体性能を実現していない。更に、米国特許出願第11/110,105号、「Enhanced Multi-Component Oxide-Containing Sputter Target Alloy Compositions」(2005年4月19日出願)に記載されたこれら技術は、粒状媒体に含有する多成分酸化物の酸化物特性の調整により粒子間のミクロ組織的、磁気的及び電気的な分離性をさらに改善する。 Sufficient interparticle separation must be established so that each particle is not affected by adjacent particles, as the atomization of the granular magnetic medium approaches the limit of magnetic dipole stability, and the magnetic crystal The anisotropy must be increased. The introduction of oxygen into the grain boundaries has been observed to provide better signal-to-noise ratio (SNR) characteristics by further encapsulating magnetic particles, but in the prior art to achieve these desired characteristics for media applications, using a single-component oxide such as SiO 2, Y 2 O 3, Al 2 O 3, TiO 2, Ta 2 O 5, Nb 2 O 5. Recent studies have demonstrated that the effect of oxygen incorporated by reactive sputtering and / or single oxide containing sputter targets is beneficial in granular magnetic media containing CoPt, CoPtCr, CoPtB and / or CoPtCrB. . This technique has shown a significant improvement in achieving a well-separated particle structure. However, these oxides do not achieve the best granular media performance with respect to the SNR and thermal stability of the PMR media. In addition, these techniques described in US patent application Ser. No. 11 / 110,105, “Enhanced Multi-Component Oxide-Containing Sputter Target Alloy Compositions” (filed Apr. 19, 2005) can be used for multicomponents contained in granular media. Adjustment of the oxide properties of the oxide further improves the microstructural, magnetic and electrical separation between the particles.
従って、磁気データ記録層に高密度粒子構造を有する磁気記録媒体を提供し、信号対雑音比を改善し、潜在的なデータ記録能力を増大することが極めて望ましいと考えられる。特に、スパッタターゲットに用いることが可能で、薄膜をスパッタすることが可能な単一成分或いは多成分の酸化物を含有する合金組成を提供することが望ましい。 Accordingly, it would be highly desirable to provide a magnetic recording medium having a high density particle structure in the magnetic data recording layer to improve the signal to noise ratio and increase the potential data recording capability. In particular, it is desirable to provide an alloy composition containing a single component or multicomponent oxide that can be used for a sputtering target and can sputter a thin film.
本発明は、スパッタターゲット、このスパッタターゲットを用いて形成した薄膜磁気記録媒体及びこの薄膜磁気記録媒体の製造方法に関し、より詳しくは、改善された冶金学的特性を有する合金組成からなるスパッタターゲット、このスパッタターゲットでスパッタ成膜された磁気記録媒体及びこの磁気記録媒体の製造方法に関する。 The present invention relates to a sputter target, a thin film magnetic recording medium formed using the sputter target, and a method of manufacturing the thin film magnetic recording medium, and more particularly, a sputter target composed of an alloy composition having improved metallurgical properties, The present invention relates to a magnetic recording medium formed by sputtering with this sputter target and a method for manufacturing the magnetic recording medium.
第1の構成によれば、本発明は、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含むスパッタターゲットである。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a first configuration, the present invention is a sputter target comprising cobalt (Co), platinum (Pt), a single component oxide and a metal additive. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature.
従って、磁気結晶異方性の改善と増大化された粒子間分離性とを介して、コバルト(Co)含有磁気相に不溶で酸化に対して抵抗力のある金属添加物を有する単一成分或いは多成分の酸化物を含有する組成を使用すれば、熱安定性及びSNRの著しい改善を行うことが可能となる。それ故、本発明は、マグネトロンスパッタリングを用いて製造されたPMR媒体の磁性をより良くする金属添加物を用いてスパッタターゲット合金組成を改善することを意図している。 Thus, through improved magnetocrystalline anisotropy and increased interparticle separation, a single component having a metal additive that is insoluble in the cobalt (Co) containing magnetic phase and resistant to oxidation or If a composition containing a multi-component oxide is used, it is possible to significantly improve thermal stability and SNR. Therefore, the present invention contemplates improving the sputter target alloy composition with a metal additive that improves the magnetism of PMR media produced using magnetron sputtering.
前記スパッタターゲットは、更に、クロム(Cr)及び/又はホウ素(B)を含む。前記スパッタターゲットは、2原子%〜10原子%の範囲の金属添加物を含み、その金属添加物は、銅(Cu)、銀(Ag)又は金(Au)である。 The sputter target further includes chromium (Cr) and / or boron (B). The sputter target includes a metal additive in a range of 2 atomic% to 10 atomic%, and the metal additive is copper (Cu), silver (Ag), or gold (Au).
PMR媒体は、熱安定性とSNR特性に関してLMR媒体以上の厳しい要求を有し、従って、高い磁気結晶異方性、微粒構造及び改善した粒子間のミクロ構造的、磁気的、電気的分離性を提供するために、従来の記録媒体について新たな添加物の導入を必要とする。CoPtを主成分とする系において、銅(Cu)、銀(Ag)及び金(Au)のような金属の適量の添加は、磁気結晶異方性及び保磁力の増大並びにLMR媒体の微粒のミクロ組織の実現について著しい改善を示す。 PMR media have more stringent requirements than LMR media in terms of thermal stability and SNR properties, and thus provide high magnetocrystalline anisotropy, fine grain structure and improved microstructural, magnetic and electrical isolation between grains. In order to provide it, it is necessary to introduce a new additive to the conventional recording medium. In systems based on CoPt, the addition of appropriate amounts of metals such as copper (Cu), silver (Ag) and gold (Au) can increase the magnetocrystalline anisotropy and coercivity as well as the microscopic size of the LMR media. Show significant improvement in organizational realization.
第2の構成によれば、本発明はスパッタターゲットであり、該スパッタターゲットは、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含み、この金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a second configuration, the present invention is a sputter target, the sputter target comprising cobalt (Co), platinum (Pt), a multi-component oxide and a metal additive, the metal additive being −0 It has a reduction potential greater than 0.03 eV and is substantially insoluble in cobalt (Co) at room temperature.
本発明は、従来組成に比べてより良い熱安定性とSNRを提供する、CoPtを主成分とする組成を含有する粒状磁気媒体をスパッタするのに用いることが可能な改善された合金組成を提供する。酸化物含有のCoPtを主成分とする媒体は、粒子サイズの微粒化と分離性を著しく改善する。これら利点は、添加金属が磁気合金組成に加えられたときに、磁気結晶異方性エネルギの増大と組み合わせた場合に更に改善される。 The present invention provides an improved alloy composition that can be used to sputter a granular magnetic medium containing a CoPt-based composition that provides better thermal stability and SNR compared to conventional compositions. To do. A medium mainly composed of oxide-containing CoPt remarkably improves particle size atomization and separability. These advantages are further improved when added metals are added to the magnetic alloy composition when combined with increased magnetocrystalline anisotropy energy.
第3の構成によれば、本発明は、基板と、該基板上に形成されたデータ記録薄膜層とを備える磁気記録媒体である。前記データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含み、該金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a third configuration, the present invention is a magnetic recording medium including a substrate and a data recording thin film layer formed on the substrate. The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a single component oxide, and a metal additive, and the metal additive has a reduction potential greater than −0.03 electron volts. In addition, it is substantially insoluble in cobalt (Co) at room temperature.
第4の構成によれば、本発明は、基板と、該基板上に形成されたデータ記録薄膜層とを備える磁気記録媒体である。前記データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含む。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a fourth configuration, the present invention is a magnetic recording medium including a substrate and a data recording thin film layer formed on the substrate. The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a multi-component oxide, and a metal additive. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature.
本発明は、より良い熱安定性とSNRを提供する改善されたスパッタターゲット合金組成を有する新たな粒状磁気媒体を製造するために利用される。特に、本発明は、CoPtを主成分とする系の粒界領域に含有する酸素と関連して、銅(Cu)、銀(Ag)及び金(Au)のような金属の取り込みにより、粒状磁気媒体内の磁気結晶異方性、粒子の微粒化及び分離性を改善する。更に加えて、本発明は、粒子の微粒化と分離性を提供する金属で酸化物を含有する粒界領域を改善することによって、従来の市販用LMR媒体の磁気特性を増大する。 The present invention is utilized to produce new granular magnetic media having an improved sputter target alloy composition that provides better thermal stability and SNR. In particular, the present invention relates to oxygen contained in the grain boundary region of the system mainly composed of CoPt, by incorporating a metal such as copper (Cu), silver (Ag), and gold (Au), thereby producing a granular magnetic material. Improves magnetic crystal anisotropy, grain atomization and separation in the medium. In addition, the present invention increases the magnetic properties of conventional commercial LMR media by improving the grain boundary region containing metal oxides that provide particle atomization and separation.
第5の構成によれば、本発明は、磁気記録媒体の製造方法である。その方法は、スパッタターゲットで基板上に少なくとも第1のデータ記録薄膜層をスパッタリングする工程を含み、前記データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含む。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a fifth configuration, the present invention is a method for manufacturing a magnetic recording medium. The method includes the step of sputtering at least a first data recording thin film layer onto a substrate with a sputter target, the sputter target for the data recording thin film layer comprising cobalt (Co), platinum (Pt), and a single component oxide. And metal additives. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature.
第6の構成によれば、本発明は、スパッタターゲットで基板上に少なくとも第1のデータ記録薄膜層をスパッタリングする工程を含む磁気記録媒体の製造方法である。前記データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含み、該金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to a sixth configuration, the present invention is a method of manufacturing a magnetic recording medium including a step of sputtering at least a first data recording thin film layer on a substrate with a sputtering target. The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a multi-component oxide, and a metal additive, and the metal additive has a reduction potential greater than −0.03 electron volts. And substantially insoluble in cobalt (Co) at room temperature.
下記の好ましい実施形態の記載において、同記載の一部をなす添付図面を参照して本発明を実施する特定の実施形態について説明する。尚、他の諸実施形態を利用することが可能であり、且つ、本発明を逸脱しない範囲で種々の変更が可能であることを理解すべきである。 In the following description of preferred embodiments, specific embodiments for carrying out the present invention will be described with reference to the accompanying drawings, which form a part of the description. It should be understood that other embodiments can be used and various modifications can be made without departing from the present invention.
本発明は、SNRを改善し潜在的なデータ記録容量を増大する磁気データ記録層が高密度の粒子構造を有する磁気記録媒体を提供する。更に、本発明は、スパッタターゲットに用い薄膜をスパッタすることが可能な改善された酸化物含有合金を提供する。 The present invention provides a magnetic recording medium having a high-density particle structure in a magnetic data recording layer that improves SNR and increases potential data recording capacity. Furthermore, the present invention provides an improved oxide-containing alloy that can be used as a sputter target to sputter a thin film.
図1は、本発明の一実施形態による改善された酸化物含有スパッタターゲット合金組成からなるスパッタターゲットによってスパッタ成膜された磁気データ記録層を備える薄膜積層構造を示す。簡潔に言えば、磁気記録媒体は、基板と、基板上に形成されたデータ記録薄膜層とを備える。データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、単一成分酸化物或いは多成分酸化物、及び金属添加物を含む。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 FIG. 1 illustrates a thin film stack structure comprising a magnetic data recording layer sputtered by a sputter target comprising an improved oxide-containing sputter target alloy composition according to one embodiment of the present invention. Briefly, a magnetic recording medium includes a substrate and a data recording thin film layer formed on the substrate. The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a single component oxide or a multicomponent oxide, and a metal additive. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature.
より詳細には、磁気記録媒体200は、基板201と、基板201上に形成されたデータ記録薄膜層206とを備える。データ記録薄膜層206は、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含み、この金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。
More specifically, the
又は、データ記録薄膜層206は、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含み、この金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。
Alternatively, the data recording
いずれの場合でも、図1は、Co−Pt−Cr−B−MOY−Xからなるデータ記録薄膜層206を示す。ここで、MOYは、単一成分酸化物或いは多成分酸化物を示し、Xは、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である金属添加物を示す。
In any case, FIG. 1 shows a data recording
上述したように、磁気記録媒体200は、シード層202、非磁性下地層204、中間層205及びカーボン潤滑層208を含む他の薄膜層を含むことが可能であるが、これらの層のいくつか或いは全てを省略してもよい。主要な磁気コバルト(Co)相への固溶度が制限され、粒界領域で磁気粒子の分離を促進する元素は、SNRを著しく改善することを実証している。
As described above, the
本発明の粒状磁気媒体は、より良い熱安定性及びSNRを提供する改善されたスパッタターゲット合金組成を含む。特に、磁気記録媒体は、CoPtを主成分とする系の粒界領域に含有する酸化物と関連して金属の取り込みにより、粒状磁気媒体の磁気結晶異方性、粒子の微粒化及び分離性を改善する。従来の市販用LMR媒体もまた、粒子の微粒化と分離性を提供する金属で酸化物を含有する粒界領域を改善することによって利益を得られる。 The granular magnetic media of the present invention includes an improved sputter target alloy composition that provides better thermal stability and SNR. In particular, the magnetic recording medium exhibits the magnetic crystal anisotropy, grain atomization and separation properties of the granular magnetic medium by incorporating metal in association with the oxide contained in the grain boundary region of the system mainly composed of CoPt. Improve. Conventional commercial LMR media can also benefit by improving the oxide-containing grain boundary region with a metal that provides particle atomization and separation.
熱安定性とSNR特性に関して、PMR媒体は、LMR媒体より厳しい要求を有し、高い磁気結晶異方性を提供し、微粒構造を改善し、粒子間のミクロ構造的、磁気的、電気的分離性を増大するために、従来のCoPt含有媒体について新たな添加物の導入を必要とする。CoPtを主成分とする系に上述の金属を添加することは、磁気結晶異方性及び保磁力(Hc)を著しく増大し、PMR及びLMR媒体の改善された微粒のミクロ組織を実現した。 With respect to thermal stability and SNR properties, PMR media have stricter requirements than LMR media, provide high magnetocrystalline anisotropy, improve grain structure, and microstructural, magnetic, and electrical separation between grains. In order to increase the properties, it is necessary to introduce new additives for conventional CoPt-containing media. Addition of the above metals to a system based on CoPt significantly increased the magnetocrystalline anisotropy and coercivity (Hc) and realized an improved fine grained microstructure of PMR and LMR media.
データ記録薄膜層206は、PMR用途に特によく適している。金属酸化物に用いられる元素の選択は、いくつかの基準に基づいており、補償及び増強特性を持つ異なる酸化物の使用は、垂直磁気媒体のSNR及び熱安定性に関して最良の粒状媒体特性を実現する。
The data recording
より詳細には、PMRの高記録密度を達成するために、データ記録薄膜層を高い熱安定性と低媒体雑音特性を備える材料で構成する必要がある。分離用母材に封じ込めた磁気領域を備え、CoCrPt或いはCoPtを主成分とする合金を含む粒状磁気媒体は、大きな磁気結晶異方性によって熱運動に対して高い抵抗力があるだけでなく、粒子サイズの縮小によってSNRに関して改善された性能も呈する。しかしながら、粒状磁気媒体の粒子の微粒化によって、磁気双極子安定性は限界に近づいているので、各粒子がバルク内の隣接粒子によって磁気的に影響を受けないような十分な粒子間分離性を有する材料を開発することがますます重要になる。 More specifically, in order to achieve a high recording density of PMR, the data recording thin film layer needs to be made of a material having high thermal stability and low medium noise characteristics. A granular magnetic medium having a magnetic region enclosed in a separating base material and containing CoCrPt or an alloy mainly composed of CoPt is not only highly resistant to thermal motion due to a large magnetocrystalline anisotropy, but also particles It also exhibits improved performance with respect to SNR due to size reduction. However, since the magnetic dipole stability is approaching its limit due to the atomization of the particles in the granular magnetic medium, there is sufficient interparticle separation so that each particle is not magnetically affected by adjacent particles in the bulk. It will become increasingly important to develop materials that have.
PMRに関して、粒子の微粒化と分離性の要求は、LMRに比べてより一層厳しく、粒状媒体において酸素を含有した粒界は、反応性スパッタリング及び/又は単一酸化物(SiO2,Al2O3,Ta2O5,或いはNb2O5のような)を含有するターゲットにより酸素を取り込ませることで、より良い磁気特性を提供することが観察されている。本発明は、更に、単一或いは多成分酸化物を含有するスパッタターゲットを用いることにより磁気媒体における酸素の豊富な粒界領域の有益さを増強する。この目的は、特定の基準に基づいて選択された多成分酸化物を含有するスパッタターゲットを用い、磁気媒体に取り込んだ多成分酸化物母材の酸化傾向、ガラス形成傾向及び磁気誘電体作用に関連した異なる酸化物特性を調整することによって達成される。 With respect to PMR, particle atomization and separability requirements are more stringent than with LMR, and grain boundaries containing oxygen in granular media may be reactive sputtering and / or single oxides (SiO 2 , Al 2 O It has been observed that oxygen can be incorporated by a target containing (such as 3 , Ta 2 O 5 , or Nb 2 O 5 ) to provide better magnetic properties. The present invention further enhances the benefits of oxygen rich grain boundary regions in magnetic media by using sputter targets containing single or multi-component oxides. This objective relates to the oxidation tendency, glass formation tendency and magnetodielectric action of multicomponent oxide matrix incorporated in magnetic media using sputter targets containing multicomponent oxides selected based on specific criteria. This is achieved by adjusting the different oxide properties.
室温でコバルト(Co)への固溶度が制限された種々の金属の中で、銅(Cu),銀(Ag),及び金(Au)は、比較的に高い酸化抵抗を有する。それぞれの標準還元電位を下記の表1に示す。 Among various metals whose solid solubility in cobalt (Co) is limited at room temperature, copper (Cu), silver (Ag), and gold (Au) have a relatively high oxidation resistance. The respective standard reduction potentials are shown in Table 1 below.
図2は、Co−Cuを主成分とする系の2元状態図を示し、図3はCo−Agを主成分とする系の2元状態図を示し、図4はCo−Auを主成分とする系の2元状態図を示す。おおよそには21℃から23℃(68°Fから72°F或いは295Kから296K)の室温では、銅(Cu),銀(Ag)及び金(Au)は実質的にコバルト(Co)に不溶である。それぞれの図に示されているように、実質的に不溶であるとは、金属添加物の固溶度が略ゼロの状態である。 2 shows a binary phase diagram of a system containing Co—Cu as a main component, FIG. 3 shows a binary phase diagram of a system containing Co—Ag as a main component, and FIG. 4 shows Co—Au as a main component. A binary phase diagram of the system is shown. At room temperature of approximately 21 ° C. to 23 ° C. (68 ° F. to 72 ° F. or 295K to 296K), copper (Cu), silver (Ag) and gold (Au) are substantially insoluble in cobalt (Co). is there. As shown in each figure, being substantially insoluble means a state in which the solid solubility of the metal additive is substantially zero.
金属添加物は、好ましくは銅(Cu),銀(Ag)又は金(Au)であるが、他の金属添加物もまた利用可能である。スパッタターゲットは、クロム(Cr)及び/又はホウ素(B)を更に含む。これら元素の添加によって、酸化物を含有する粒状媒体の粒子間のミクロ組織的、磁気的及び電気的な分離性をより増強することが可能になる。尚、別の例としては、クロム(Cr)及び/又はホウ素(B)を省略してもよい。前記スパッタターゲットは、2原子%〜10原子%の範囲の金属添加物を含み、この金属添加物は、銅(Cu),銀(Ag)又は金(Au)又は他の添加物とすることができるが、多少の金属添加物を含有するスパッタターゲットもまた本発明により考えられる。組成内のコバルト(Co),白金(Pt),クロム(Cr),ホウ素(B),単一成分酸化物或いは多成分酸化物の原子%は、変えることが可能で、いかなる特定の原子%にも限定されない。 The metal additive is preferably copper (Cu), silver (Ag) or gold (Au), although other metal additives are also available. The sputter target further includes chromium (Cr) and / or boron (B). The addition of these elements makes it possible to further enhance the microstructural, magnetic and electrical separation between the particles of the granular medium containing the oxide. As another example, chromium (Cr) and / or boron (B) may be omitted. The sputter target includes a metal additive in a range of 2 atomic% to 10 atomic%, and the metal additive may be copper (Cu), silver (Ag), gold (Au), or other additives. Although possible, sputter targets containing some metal additives are also contemplated by the present invention. The atomic% of cobalt (Co), platinum (Pt), chromium (Cr), boron (B), single-component oxide or multi-component oxide in the composition can vary and can be any specific atomic% Is not limited.
別の構成によれば、本発明は、コバルト(Co),白金(Pt),単一成分酸化物及び金属添加物を含むスパッタターゲットであって、前記金属添加物が、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。又は、本発明は、コバルト(Co),白金(Pt),多成分酸化物及び金属添加物を含むスパッタターゲットであって、前記金属添加物が、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 According to another configuration, the present invention is a sputter target comprising cobalt (Co), platinum (Pt), a single component oxide and a metal additive, wherein the metal additive is -0.03 electron volts. It has a higher reduction potential and is substantially insoluble in cobalt (Co) at room temperature. Alternatively, the present invention provides a sputtering target including cobalt (Co), platinum (Pt), a multi-component oxide, and a metal additive, wherein the metal additive has a reduction potential greater than −0.03 electron volts. In addition, it is substantially insoluble in cobalt (Co) at room temperature.
磁気結晶異方性の改善と増大化された粒子間分離性とを介した、熱安定性とSNRの著しい改善は、Coを含有する磁気相に不溶で、酸化に対して抵抗力がある金属添加物を有し、前述の単一成分酸化物或いは多成分酸化物を含有する組成からなるスパッタターゲットを用いることにより可能である。本発明は、マグネトロンスパッタリングを用いて製造されたPMR媒体に関してより良い磁性を提供する金属添加物を用いるこれら改善されたスパッタターゲット合金組成を提供する。 A significant improvement in thermal stability and SNR, through improved magnetocrystalline anisotropy and increased interparticle separation, is a metal that is insoluble in the Co-containing magnetic phase and resistant to oxidation. This is possible by using a sputter target having an additive and having a composition containing the above-described single component oxide or multicomponent oxide. The present invention provides these improved sputter target alloy compositions with metal additives that provide better magnetism for PMR media produced using magnetron sputtering.
本発明は、特に、PMR用途において、単一成分酸化物或いは多成分酸化物を含有するスパッタターゲットを用いて磁気膜を加工処理するために利用することができる。つまり、このPMR用途では、粒子組織の微粒化及び分離性の要求が、SNRの劣化を最小限にすると共に大きな磁気異方性エネルギ(Ku)を実現するために更に厳しいが、このようなPMR用途において利用することができるのである。また、市販の水平磁気記録媒体も磁気特性を改善するための粒子の微粒化及び分離性に関する多成分酸化物母材の基本的属性の利益を享有することができる。更にまた、主要な磁気コバルト(Co)相に不溶な金属が、CoPtを主成分とする系に添加された時に、LMR媒体の磁気結晶異方性、保磁力(Hc)及び粒子サイズの微粒化を著しく改善する能力を呈するのである。 The present invention can be used to process a magnetic film using a sputter target containing a single component oxide or a multicomponent oxide, particularly in PMR applications. In other words, in this PMR application, the requirements for atomization and separation of the grain structure are more severe in order to minimize the SNR degradation and achieve a large magnetic anisotropy energy (Ku). It can be used in applications. Also, commercially available horizontal magnetic recording media can also benefit from the basic attributes of multi-component oxide matrix with respect to particle atomization and separability to improve magnetic properties. Furthermore, when a metal insoluble in the main magnetic cobalt (Co) phase is added to a system containing CoPt as a main component, the magnetic crystal anisotropy, coercivity (Hc) and grain size of the LMR medium are atomized. It exhibits the ability to improve significantly.
本発明は、従来の組成と比較してより良い熱安定性とSNRを提供するCoPtを主成分とする組成を含有する粒状磁気媒体をスパッタするために利用することが可能な改善された合金組成を提供する。酸化物含有のCoPtを主成分とする媒体は、粒子サイズの微粒化と分離性を著しく改善する。これらの利点は、添加物金属が磁気合金組成に添加されたときに磁気結晶異方性エネルギの増大と組み合わされた場合に、更に増進される。 The present invention provides an improved alloy composition that can be used to sputter a granular magnetic medium containing a CoPt-based composition that provides better thermal stability and SNR compared to conventional compositions. I will provide a. A medium mainly composed of oxide-containing CoPt remarkably improves particle size atomization and separability. These advantages are further enhanced when combined with an increase in magnetocrystalline anisotropy energy when additive metals are added to the magnetic alloy composition.
図5は、本発明の別の実施形態による磁気記録媒体の製造方法を示すフローチャートである。簡潔に言えば、本実施形態の方法は、スパッタターゲットで基板上に少なくとも第1のデータ記録薄膜層をスパッタリングする工程を含み、そのデータ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含む。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。別の方法は、スパッタターゲットで基板上に少なくとも第1のデータ記録薄膜層をスパッタリングする工程を含み、そのデータ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含む。前記金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。 FIG. 5 is a flowchart showing a method of manufacturing a magnetic recording medium according to another embodiment of the present invention. Briefly speaking, the method of the present embodiment includes a step of sputtering at least a first data recording thin film layer on a substrate with a sputter target, and the sputter target for the data recording thin film layer includes cobalt (Co), platinum ( Pt), single component oxides and metal additives. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature. Another method includes sputtering at least a first data recording thin film layer on a substrate with a sputter target, the sputter target for the data recording thin film layer comprising cobalt (Co), platinum (Pt), a multicomponent oxide. And metal additives. The metal additive has a reduction potential greater than −0.03 electron volts and is substantially insoluble in cobalt (Co) at room temperature.
本発明は、より良い熱安定性とSNRを提供する改善されたスパッタターゲット合金組成を有する新たな粒状磁気媒体の製造に利用される。特に、本発明は、CoPtを主成分とする系で酸化物を含有する粒界領域と関連して、銅(Cu)、銀(Ag)及び金(Au)のような金属の取り込みにより、粒状磁気媒体の磁気結晶異方性、粒子の微粒化及び分離性を改善する。 The present invention is utilized in the manufacture of new granular magnetic media having an improved sputter target alloy composition that provides better thermal stability and SNR. In particular, the present invention relates to a grain boundary region containing an oxide in a CoPt-based system, and by incorporating metals such as copper (Cu), silver (Ag) and gold (Au), Improves magnetic crystal anisotropy, grain atomization and separation of magnetic media.
より詳細には、本プロセスは、ステップ300で開始し、ステップ301で少なくとも第1のデータ記録薄膜層をスパッタターゲットで基板上にスパッタし、ステップ302でプロセスを終了する。データ記録薄膜層用スパッタターゲットは、コバルト(Co)、白金(Pt)、多成分酸化物或いは単一成分酸化物及び金属添加物を含み、この金属添加物は、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶である。
More specifically, the process begins at
磁気結晶異方性の増強と増大された粒子間の分離性による熱安定性とSNRの著しい改善は、コバルト(Co)を含有する磁気層に不溶で酸化に対して抵抗力がある金属添加物と共に単一成分酸化物或いは多成分酸化物を含有する組成を用いることにより可能である。本発明は、マグネトロンスパッタリングを用いて製造されたPMR媒体に対してより良好な磁性を提供する金属添加物を用いることにより改善されたスパッタターゲット合金組成を提供する。 Significant improvement in thermal stability and SNR due to enhanced magnetocrystalline anisotropy and increased separation between particles is a metal additive that is insoluble in the magnetic layer containing cobalt (Co) and resistant to oxidation In addition, it is possible to use a composition containing a single component oxide or a multicomponent oxide. The present invention provides an improved sputter target alloy composition by using a metal additive that provides better magnetism for PMR media produced using magnetron sputtering.
より高い磁気結晶異方性及び保磁力(Hc)を実現するため、金属添加物は元素形態であり、スパッタリング中及びスパッタターゲット形態で酸化に対する低い性向を達成するために金属添加物は酸素と結合されない。更に、金属添加物は、半化学量論酸化物を形成せず、また、粒界領域の酸化物を半化学量論にしないような酸化性向を有する。ターゲットと同様、磁気媒体の非化学量論酸素は、磁気粒子間で、電子或いは正孔の伝導は媒体処理中の酸素分圧の機能でもある陽イオン/陰イオンの空隙を償う電気伝導を生じ、マグネトロンスパッタリングの間、与えられた磁場と相互に作用して、ターゲットのスパッタ特性と同様、媒体の磁気特性に悪影響を与える。 To achieve higher magnetocrystalline anisotropy and coercivity (Hc), the metal additive is in elemental form, and the metal additive combines with oxygen to achieve a low propensity to oxidation during sputtering and in the sputter target form. Not. Furthermore, the metal additive does not form a substoichiometric oxide, and has an oxidizing tendency such that the oxide in the grain boundary region does not become a substoichiometric amount. As with the target, non-stoichiometric oxygen in the magnetic medium results in electrical conduction between the magnetic particles and the conduction of electrons or holes compensates for the cation / anion gap, which is also a function of oxygen partial pressure during media processing. During magnetron sputtering, it interacts with the applied magnetic field and adversely affects the magnetic properties of the medium as well as the sputtering properties of the target.
従って、本発明は、マグネトロンスパッタリングを用いて製造されたCoPt(Cr)(B)−MOY−X(ここで、MOYは単一成分酸化物或いは多成分酸化物であり、Xは銅(Cu)、銀(Ag)或いは金(Au)である)を含有する粒状磁気媒体をもたらす改善された合金組成を請求し、従来組成に比べてより良い熱安定性とSNR特性を提供する。 Accordingly, the present invention relates to CoPt (Cr) (B) -MO Y -X (where MO Y is a single-component oxide or multi-component oxide, and X is copper ( It claims an improved alloy composition that results in a granular magnetic medium containing Cu), silver (Ag) or gold (Au) and provides better thermal stability and SNR characteristics compared to conventional compositions.
単一成分酸化物或いは多成分酸化物を含有する合金組成の使用は、磁気媒体の異なる構成酸化物の酸化物特性を調整することにより、粒子間のミクロ組織的及び電気的な分離性を改善する。この目的のために用いられる特定の金属酸化物は、磁気粒子を封じ込める単一成分或いは多成分の分離した酸化物母材を形成するために、SiO2/Al2O3やその他のような公知の酸化物と共に用いることが可能である。 Use of alloy compositions containing single or multicomponent oxides improves the microstructural and electrical separation between particles by adjusting the oxide properties of different constituent oxides of the magnetic medium To do. Certain metal oxides used for this purpose are known in the art, such as SiO 2 / Al 2 O 3 and others, to form single or multi-component separate oxide matrixes that contain magnetic particles. It is possible to use together with the oxides.
まれに金属と固溶体を形成する酸化物は、CoCrPt或いはCoPtを主成分とする粒状媒体の粒界領域に析出する特有の傾向を有している。その結果、磁気粒子のミクロ組織的な分離性を増大する。これら酸化物は、酸素を含有するCoCrPt或いはCoPtを主成分とする薄膜媒体のエピタキシャル成長を妨げない。従って、磁気異方性エネルギ(Ku)の減少を抑制する。 Oxides that rarely form solid solutions with metals have a unique tendency to precipitate in grain boundary regions of granular media containing CoCrPt or CoPt as the main component. As a result, the microscopic separation of magnetic particles is increased. These oxides do not hinder the epitaxial growth of CoCrPt containing oxygen or a thin film medium mainly containing CoPt. Therefore, a decrease in magnetic anisotropy energy (Ku) is suppressed.
酸素は、粒界の酸素含有量を高めるために薄膜磁気媒体に反応的スパッタリングにより導入される。酸素を含有する媒体による上述の確認された効果によって、CoCrPt或いはCoPtと共に単一成分酸化物を使用することにより、PMR媒体内でより良好な磁気的挙動が生じる。しかしながら、酸化物を含有するターゲットを用いて製造された酸素含有粒状磁気媒体は、反応的スパッタリングにより取り込まれた酸素を含有する媒体よりも優れた磁気特性を実証した。 Oxygen is introduced into the thin film magnetic medium by reactive sputtering to increase the oxygen content of the grain boundaries. Due to the above-described confirmed effect with oxygen-containing media, better magnetic behavior occurs in PMR media by using single component oxides with CoCrPt or CoPt. However, oxygen-containing granular magnetic media produced using oxide-containing targets have demonstrated better magnetic properties than oxygen-containing media incorporated by reactive sputtering.
上記実施形態では、特定な具体的実施形態について記述したが、本発明は、上述の実施形態に限定されるものではなく、種々の変更や変形が本発明の精神及び範囲から逸脱することなく当業者によってなされるであろうことは理解されるであろう。 In the above embodiments, specific specific embodiments have been described. However, the present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the present invention. It will be understood that it will be done by a vendor.
200 磁気記録媒体
201 基板
202 シード層
204 非磁性下地層
205 中間層
206 データ記録薄膜層
208 カーボン潤滑層
200
Claims (22)
前記基板上に形成されたデータ記録薄膜層と、
を備え、
前記データ記録薄膜層用スパッタターゲットが、コバルト(Co)、白金(Pt)、単一成分酸化物及び金属添加物を含み、該金属添加物が、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶であることを特徴とする磁気記録媒体。 A substrate,
A data recording thin film layer formed on the substrate;
With
The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a single component oxide and a metal additive, and the metal additive has a reduction potential greater than -0.03 electron volts. And a magnetic recording medium that is substantially insoluble in cobalt (Co) at room temperature.
前記基板上に形成されたデータ記録薄膜層と、
を備え、
前記データ記録薄膜層用スパッタターゲットが、コバルト(Co)、白金(Pt)、多成分酸化物及び金属添加物を含み、該金属添加物が、−0.03電子ボルトより大きい還元電位を有し、且つ、室温でコバルト(Co)に対して実質的に不溶であることを特徴とする磁気記録媒体。 A substrate,
A data recording thin film layer formed on the substrate;
With
The sputter target for the data recording thin film layer includes cobalt (Co), platinum (Pt), a multi-component oxide and a metal additive, and the metal additive has a reduction potential greater than −0.03 electron volts. A magnetic recording medium characterized by being substantially insoluble in cobalt (Co) at room temperature.
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WO2014178310A1 (en) * | 2013-04-30 | 2014-11-06 | Jx日鉱日石金属株式会社 | Sintered body, and sputtering target for magnetic recording film formation use which comprises said sintered body |
JP5878242B2 (en) * | 2013-04-30 | 2016-03-08 | Jx金属株式会社 | Sintered body, sputtering target for forming a magnetic recording film comprising the sintered body |
WO2016133047A1 (en) * | 2015-02-19 | 2016-08-25 | Jx金属株式会社 | Sputtering target for forming magnetic thin film |
JPWO2016133047A1 (en) * | 2015-02-19 | 2017-11-09 | Jx金属株式会社 | Sputtering target for magnetic thin film formation |
JP2016160530A (en) * | 2015-03-05 | 2016-09-05 | 光洋應用材料科技股▲分▼有限公司 | Magnetic alloy sputtering target and recording layer for magnetic recording media |
Also Published As
Publication number | Publication date |
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CN1880501A (en) | 2006-12-20 |
KR20060131609A (en) | 2006-12-20 |
TW200643206A (en) | 2006-12-16 |
EP1734513A1 (en) | 2006-12-20 |
CZ2006126A3 (en) | 2007-01-17 |
US20060286414A1 (en) | 2006-12-21 |
SG128541A1 (en) | 2007-01-30 |
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