CN104174851B - A kind of Co-Cr-Pt-SiO2The preparation method of target - Google Patents
A kind of Co-Cr-Pt-SiO2The preparation method of target Download PDFInfo
- Publication number
- CN104174851B CN104174851B CN201410394572.2A CN201410394572A CN104174851B CN 104174851 B CN104174851 B CN 104174851B CN 201410394572 A CN201410394572 A CN 201410394572A CN 104174851 B CN104174851 B CN 104174851B
- Authority
- CN
- China
- Prior art keywords
- target
- powder
- content
- carry out
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a kind of Co-Cr-Pt-SiO2The preparation method of target. The method mainly comprises selection, the mixing of powder, the pre-molding of ingot blank, the synthetic sintering processes of reaction, hip treatment, the mechanical process of material powder. Wherein the synthetic sintering technology of reaction is effectively improved Co-Cr-Pt-SiO2Combination between each thing phase in target, improve the density of material, avoid must filling jacket to powder before traditional hip treatment, vacuumized, removed jacket treatment process after soldering and sealing and high temperature insostatic pressing (HIP), effectively simplify production technology, improve drawing abillity, be applicable to carrying out successional suitability for industrialized production.
Description
Technical field
The invention provides a kind of preparation method of Co base alloy target material, specifically, is a kind of Co-Cr-Pt-SiO for magnetic recording media industry2Preparation of target materials method, belongs to powder metallurgical technology.
Background technology
Target is a kind of extraordinary electronic material with high additive value, at semiconductor microelectronics integrated circuit, thin film hybrid IC, chip components and parts, the particularly technical field such as hard disk, CD and liquid crystal flat panel display LCD, all need by sputtering technology and adopt different preparation of target materials to go out the film of various unlike materials, reaching the performance requirement such as magnetic, electrical, optical, piezoelectricity of product. Target, as the basic technology of sophisticated industry development, has obtained developing on an unprecedented scale, target market scale expanding day specialized rising industry of flourish one-tenth. At present, magnetic recording media target is one of three class targets of market scale maximum.
Along with the continuous growth of magnetic recording density, corresponding magnetic recording media becomes and becomes increasingly complex by the structural component of target, from initial binary Co-Cr alloy, ternary Co-Cr-Pt alloy, Co-Cr-Pt-B to five yuan of Co-Cr-Pt-B-Cu of quaternary. People find gradually with Co-Cr-Pt-SiO in recent years2For the Co-Cr-Pt-oxide target material of representative has excellent magnetic performance, be widely used in magnetic recording media industry. Due to the existence of oxide, Co-Cr-Pt-SiO2Target is difficult to by conventional melting and plastic working legal system standby, and normally adopts powder metallurgic method to be prepared. For example, U.S. Patent Publication No. US2007/0134124A1, open day on June 14th, 2007, the name of innovation and creation is called Sputtertargetandmethodforfabricatingsputtertargetincludi ngapluralityofmaterials, this application case discloses a kind of multicomponent sputtering target material and preparation method thereof, the method by raw material select, powder mixes, compacting, dress jacket, high temperature insostatic pressing (HIP) and machined have obtained Co-Cr-Pt-SiO2Etc. multicomponent target, the method requires to select powder size between 0.01～50 micron, with the splash phenomena that prevents that target from occurring in sputter procedure. Its weak point be before hip treatment, must fill jacket to powder, vacuumize, soldering and sealing; After high temperature insostatic pressing (HIP), need jacket treatment process, technique relative complex, time-consuming length, and in the process of removing jacket, easily cause the loss of precious metals pt.
China Patent Publication No. CN101928851A, open day on December 29th, 2010, the name of innovation and creation is called boracic target material and preparation method thereof, film, magnetic recording medium, this application case discloses a kind of preparation method of boracic target material, the method is by preparation Co-Cr prealloy powder, subsequently prealloy powder mixed with boron powder and oxide, sieve, pre-molding, vacuum heating-press sintering prepare Co-Cr-B-oxide target material and Co-Cr-Pt-B-oxide target material, applicant thinks and adopts Co-Cr prealloy powder effectively to avoid the generation of thick boride. Its weak point is, having adopted afterwards in mixing the processing of sieving is equally also also to avoid one of reason of thick boride generation, due to initial powder granularity and crushing efficiency difference, likely cause composition and predeterminated target composition after sieving to have different simultaneously.
We also find at experimentation simultaneously, and powder metallurgic method is prepared Co-Cr-Pt-SiO2In the process of target, as adopt directly mixed powder and pressing process moulding, conventionally can run into oxide and be combined the problems such as bad, non-wetting with other composition, cause thus the target defect of preparation more, density is lower, and machining and processability are poor. After retrieval amount of literature data, be applied to preparation Co-Cr-Pt-SiO so far there are no reactive synthesis technique2The relevant report of target. Reactive synthesis technique is applied to Co-Cr-Pt-SiO by this project2In the preparation of target, effectively improve combination between the each thing phase in composite, thereby the density of material and processing characteristics are all improved significantly.
Summary of the invention
The object of the present invention is to provide a kind of new preparation of target materials method, prepare oxide particle and metallic matrix and have the Co-Cr-Pt-SiO of good metallurgical binding2Target. Its preparation process follows these steps to carry out:
(1) carry out the selection of material powder: material powder is Co, Cr, Pt, Si and oxide (Co3O4、CoO、Co2O3、Cr2O3In one or more mixture), purity is all more than or equal to 99.95wt%, Co, Cr, Pt, Si powder size are 1～50 μ m, CoO, Co3O4、Co2O3、Cr2O3Granularity is 1～10 μ m;
(2) Co, Cr, Pt, Si and oxide are mixed, wherein the content of Co is 45～65at%, and the content of Cr is 12～35at%, and the content of Pt is 3～20at%, and the content of Si is 4～15at%, and the content of oxide is 2～20at%. Adopt planetary ball mill mode to mix powder, employing medium ball is steel ball, agate ball or zirconia ball, and ratio of grinding media to material is 5:1～20:1, and the mixed powder time is 12～36 hours;
(3) after mixed powder, adopting hydraulic press to carry out pre-molding, is the pre-molding carrying out under 10～200MPa 0.5～2 hour at pressure;
(4) the target ingot blank of handling well in step (3) is evacuated to 1x10-2～1x10-3Pa, then fill Ar gas to 1～20Pa, to carry out solid phase reaction at 850～1000 DEG C and synthesize, the time is 1～4 hour;
(5) the target ingot blank of (4) being handled well carries out hip treatment, and hip temperature is 1000～1500 DEG C, and pressure is 100～150MPa, and the time is 1～16 hour;
(6) carry out mechanical process and obtain needing the target product of size.
Advantage of the present invention is that the reaction synthesis technique first adopting in the present invention makes SiO2In sintering process, reaction is synthesized, SiO2Particle is tiny, be evenly distributed, SiO2Be combined well with metallic matrix interface; Secondly before high temperature insostatic pressing (HIP), added single step reaction synthesis technique, effectively improve the target ingot blank density before high temperature insostatic pressing (HIP), avoid must filling jacket to powder before traditional hip treatment, vacuumized, removed jacket treatment process after soldering and sealing and high temperature insostatic pressing (HIP), effectively simplify production technology, eliminate and gone the noble metal loss that causes in jacket process, also improved the processing characteristics of target simultaneously. This method can be widely used in the preparation of metal-oxide composite, is applicable to carrying out successional suitability for industrialized production.
Brief description of the drawings
Fig. 1 is Co, Cr, Pt, Co3O4, X ray diffracting spectrum after the mixed powder of Si ball milling,
Fig. 2 is that the X ray diffracting spectrum reacting after synthetic and high temperature insostatic pressing (HIP) (adopts Co, Cr, Pt, Co3O4, Si powder carries out the mixed powder of ball milling),
Fig. 3 be the SEM photo of reaction after synthetic (Fig. 3 a) and corresponding EDS power spectrum (Fig. 3 b) (adopts Co, Cr, Pt, Co3O4, Si powder carries out the mixed powder of ball milling).
Detailed description of the invention
Be further described in conjunction with Fig. 1～3 pair the specific embodiment of the present invention.
Embodiment 1
The material powder of selecting is Co, Cr, Pt, Co3O4, five kinds of powder of Si, wherein the content of Co is 50at%, the content of Cr is 28at%, the content of Pt is 16at%, the content of Si is 4at%, Co3O4Content be 2at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is steel ball, and ratio of grinding media to material is 5:1, and the mixed powder time is 14 hours (Fig. 1 is shown in by the XRD collection of illustrative plates after mixed powder); Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 120MPa, and the dwell time is 0.5 hour, forms target ingot blank; Be evacuated to subsequently 1x10-3Pa, then fill Ar gas to 5Pa, to carry out solid phase reaction at 900 DEG C and synthesize, the time is 2 hours, after processing, the density of target ingot blank is 9.35g/cm3, reach solid density 95.3% (Fig. 2 is shown in by the XRD collection of illustrative plates after reaction is synthetic, and the SEM after reaction is synthetic is shown in Fig. 3 a), and (Fig. 3 b) shows that black particle is SiO to the EDAX results of black particle 1 in Fig. 3 a2Particle, SiO2Particle size distribution scope is 200～1000nm, and average grain diameter is 450nm; The target of handling well is carried out to hip treatment, and hip temperature is 1000 DEG C, and pressure is 120MPa, and the time is 2 hours, and after processing, the density of target ingot blank is 9.72g/cm3, reach 99.1% (Fig. 2 is shown in by the XRD collection of illustrative plates after high temperature insostatic pressing (HIP)) of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-27Cr-15Pt-4SiO2(at％)。
Embodiment 2
The material powder of selecting is Co, Cr, Pt, CoO, five kinds of powder of Si, and wherein the content of Co is 50at%, and the content of Cr is 28at%, and the content of Pt is 10at%, and the content of Si is 4at%, and the content of CoO is 8at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is zirconia ball, and ratio of grinding media to material is 8:1, and the mixed powder time is 24 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 150MPa, and the dwell time is 0.5 hour, forms target ingot blank; Be evacuated to subsequently 5x10-3Pa, then fill Ar gas to 10Pa, to carry out solid phase reaction at 900 DEG C and synthesize, the time is 2 hours, after processing, the density of target ingot blank is 8.66g/cm3, reach 96.3% of solid density, SiO2Particle size distribution scope is 200～850nm, and average grain diameter is 325nm; The target of handling well is carried out to hip treatment, and hip temperature is 1000 DEG C, and pressure is 120MPa, and the time is 2 hours, and after processing, the density of target ingot blank is 8.93g/cm3, reach solid density solid density 99.3%; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-28Cr-10Pt-4SiO2(at％)。
Embodiment 3
The material powder of selecting is Co, Cr, Pt, Co2O3, five kinds of powder of Si, wherein the content of Co is 58at%, the content of Cr is 20at%, the content of Pt is 12at%, the content of Si is 6at%, Co2O3Content be 4at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is agate ball, and ratio of grinding media to material is 10:1, and the mixed powder time is 18 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, mold pressing pressure is 90MPa, and the dwell time is 1 hour, forms target ingot blank; Be evacuated to subsequently 2x10-3Pa, then fill Ar gas to 15Pa, to carry out solid phase reaction at 1000 DEG C and synthesize, the time is 2.5 hours, after processing, the density of target ingot blank is 8.62g/cm3, be 96.5% of solid density, SiO2Particle size distribution scope is 400～1000nm, and average grain diameter is 520nm; The target of handling well is carried out to hip treatment, and hip temperature is 1100 DEG C, and pressure is 110MPa, and the time is 2.5 hours, and after processing, the density of target ingot blank is 8.88g/cm3For 99.4% of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-19Cr-12Pt-6SiO2(at％)。
Embodiment 4
The material powder of selecting is Co, Cr, Pt, Cr2O3, five kinds of powder of Si, wherein the content of Co is 48at%, the content of Cr is 20at%, the content of Pt is 12at%, the content of Si is 12at%, Cr2O3Content be 8at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is steel ball, and ratio of grinding media to material is 12:1, and the mixed powder time is 24 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 200MPa, and the dwell time is 1 hour, forms target ingot blank; Be evacuated to subsequently 1x10-2Pa, then fill Ar gas to 18Pa, to carry out solid phase reaction at 980 DEG C and synthesize, the time is 2.5 hours, after processing, the density of target ingot blank is 7.38g/cm3, be 96.5% of solid density, SiO2Particle size distribution scope is 100～750nm, and average grain diameter is 275nm; The target of handling well is carried out to hip treatment, and hip temperature is 1200 DEG C, and pressure is 130MPa, and the time is 2 hours, and after processing, the density of target ingot blank is 7.61g/cm3, be 99.5% of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-33Cr-11Pt-11SiO2 (at%).
Embodiment 5
The material powder of selecting is Co, Cr, Pt, CoO, Cr2O3, six kinds of powder of Si, wherein the content of Co is 47at%, the content of Cr is 15at%, the content of Pt is 15at%, the content of Si is 15at%, the content of CoO is 6at%, Cr2O3Content be 2at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is agate ball, and ratio of grinding media to material is 15:1, and the mixed powder time is 30 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 180MPa, and the dwell time is 0.5 hour, forms target ingot blank; Be evacuated to subsequently 3x10-3Pa, then fill Ar gas to 6Pa, to carry out solid phase reaction at 1000 DEG C and synthesize, the time is 3 hours, after processing, the density of target ingot blank is 7.36g/cm3, be 95.8% of solid density, SiO2Particle size distribution scope is 100～550nm, and average grain diameter is 205nm; The target of handling well is carried out to hip treatment, and hip temperature is 1300 DEG C, and pressure is 130MPa, and the time is 2 hours, and after processing, the density of target ingot blank is 7.65g/cm3, be 99.6% of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-19Cr-15Pt-15SiO2(at％)。
Embodiment 6
The material powder of selecting is Co, Cr, Pt, Co2O3、Cr2O3, six kinds of powder of Si, wherein the content of Co is 48at%, the content of Cr is 22at%, the content of Pt is 15at%, the content of Si is 9at%, Co2O3Content be 4at%, Cr2O3Content be 2at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is steel ball, and ratio of grinding media to material is 20:1, and the mixed powder time is 24 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 100MPa, and the dwell time is 1 hour, forms target ingot blank; Be evacuated to subsequently 8x10-3Pa, then fill Ar gas to 8Pa, to carry out solid phase reaction at 1000 DEG C and synthesize, the time is 2.5 hours, after processing, the density of target ingot blank is 8.26g/cm3, be 95.7% of solid density, SiO2Particle size distribution scope is 350～950nm, and average grain diameter is 440nm; The target of handling well is carried out to hip treatment, and hip temperature is 1200 DEG C, and pressure is 140MPa, and the time is 2 hours, and after processing, the density of target ingot blank is 8.56g/cm3, be 99.2% of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-25Cr-14Pt-8SiO2(at％)。
Embodiment 7
The material powder of selecting is Co, Cr, Pt, Cr2O3、Co2O3, CoO, seven kinds of powder of Si, wherein the content of Co is 49at%, the content of Cr is 21at%, the content of Pt is 12at%, the content of Si is 10at%, Cr2O3Content be 4at%; Co2O3Content be 2at%, the content of CoO is 2at%; Adopt subsequently planetary ball mill mode to mix powder, employing medium ball is steel ball, and ratio of grinding media to material is 14:1, and the mixed powder time is 36 hours; Adopt hydraulic press to carry out pre-molding in the powder mixing subsequently, pressure is 200MPa, and the dwell time is 1 hour, forms target ingot blank; Be evacuated to subsequently 1x10-3Pa, then fill Ar gas to 20Pa, to carry out solid phase reaction at 1000 DEG C and synthesize, the time is 3 hours, after processing, the density of target ingot blank is 7.78g/cm3, be 96.6% of solid density, SiO2Particle size distribution scope is 100～450nm, and average grain diameter is 170nm; The target of handling well is carried out to hip treatment, and hip temperature is 1300 DEG C, and pressure is 140MPa, and the time is 4 hours, and after processing, the density of target ingot blank is 8.03g/cm3, be 99.8% of solid density; Finally carry out mechanical process and obtain needing the target product of size, target finally consist of Co-27Cr-11Pt-9SiO2(at％)。
Claims (1)
1. a Co-Cr-Pt-SiO2The preparation method of target, is characterized in that, is walked by following processing technologyRapid formation:
(1) selecting Co, Cr, Pt, Si and oxide is material powder; Wherein the content of Co is 45～65at%,The content of Cr is 12～35at%, and the content of Pt is 3～20at%, and the content of Si is 4～15at%, oxideContent be 2～20at%;
(2) material powder is mixed, hybrid mode is planetary ball mill, and employing medium ball is steel ball, agateBall or zirconia ball, ratio of grinding media to material is 5:1～20:1, the mixed powder time is 12～36 hours;
(3) after mixed powder, adopting hydraulic press to carry out pre-molding, is to carry out 0.5～2 under 10～200MPa at pressureHour pre-molding;
(4) the target ingot blank of handling well in step (3) is evacuated to 1x10-2～1x10-3Pa, then fill Ar gasTo 1～20Pa, to carry out solid phase reaction at 850～1000 DEG C and synthesize, the time is 1～4 hour;
(5) target of handling well in step (4) is carried out to hip treatment, hip temperature is1000～1500 DEG C, pressure is 100～150MPa, and the time is 1～16 hour;
(6) carry out mechanical process and obtain needing the target product of size
Described oxide is Co3O4、CoO、Co2O3、Cr2O3In one or more mixture,
Target ingot blank is carrying out in solid phase reaction building-up process, and oxide reacts with Si powder and generates SiO2，
Target ingot blank carry out solid phase reaction synthetic after, density can reach the more than 95% of solid density,Target ingot blank is carrying out the synthetic rear SiO generating of solid phase reaction2Particle is tiny, and its particle size distribution is100～1000nm，
Described material powder purity is all more than or equal to 99.95wt%,
Described material powder Co, Cr, Pt, Si powder size is 1～50 μ m, and oxide granularity is 1～10μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410394572.2A CN104174851B (en) | 2014-08-12 | 2014-08-12 | A kind of Co-Cr-Pt-SiO2The preparation method of target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410394572.2A CN104174851B (en) | 2014-08-12 | 2014-08-12 | A kind of Co-Cr-Pt-SiO2The preparation method of target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104174851A CN104174851A (en) | 2014-12-03 |
| CN104174851B true CN104174851B (en) | 2016-05-18 |
Family
ID=51956354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410394572.2A Active CN104174851B (en) | 2014-08-12 | 2014-08-12 | A kind of Co-Cr-Pt-SiO2The preparation method of target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104174851B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1880501A (en) * | 2005-06-15 | 2006-12-20 | 黑罗伊斯公司 | Enhanced oxide-containing sputter target alloy compositions |
| CN1884611A (en) * | 2005-06-24 | 2006-12-27 | 黑罗伊斯有限公司 | Enhanced oxygen non-stoichiometry compensation for thin films |
| CN1952207A (en) * | 2005-04-19 | 2007-04-25 | 黑罗伊斯有限公司 | Enhanced multi-component oxide-containing sputter target alloy compositions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
| US7494617B2 (en) * | 2005-04-18 | 2009-02-24 | Heraeus Inc. | Enhanced formulation of cobalt alloy matrix compositions |
-
2014
- 2014-08-12 CN CN201410394572.2A patent/CN104174851B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1952207A (en) * | 2005-04-19 | 2007-04-25 | 黑罗伊斯有限公司 | Enhanced multi-component oxide-containing sputter target alloy compositions |
| CN1880501A (en) * | 2005-06-15 | 2006-12-20 | 黑罗伊斯公司 | Enhanced oxide-containing sputter target alloy compositions |
| CN1884611A (en) * | 2005-06-24 | 2006-12-27 | 黑罗伊斯有限公司 | Enhanced oxygen non-stoichiometry compensation for thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104174851A (en) | 2014-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101268211B (en) | Sputtering target, transparent conductive film, and transparent electrode | |
| CN103182507B (en) | Production method of chromium-aluminium alloy target material | |
| CN101268026B (en) | Oxide material and sputtering target | |
| JP5586752B2 (en) | High density refractory metal and alloy sputtering targets | |
| TWI564416B (en) | Magnetic sputtering target for magnetic recording film | |
| CN101967593A (en) | Ultrafine grain solid carbide material containing rare earth and preparation method thereof | |
| SG177237A1 (en) | Sputtering target of ferromagnetic material with low generation of particles | |
| CN101835920A (en) | Sputtering target for magnetic recording film and method for manufacturing such sputtering target | |
| CN104911379A (en) | High-performance metal-matrix composite preparation method | |
| CN105331939A (en) | Silicon-alloy-containing target material and preparation method thereof | |
| CN111168053B (en) | Preparation method of raw material powder for high-entropy alloy selective laser melting additive manufacturing | |
| WO2011102359A1 (en) | Sputtering target-backing plate assembly body | |
| Nakamichi et al. | Homogenization treatment to stabilize the compositional structure of beryllide pebbles | |
| CN114959599A (en) | Sputtering target for forming magnetic recording film and method for producing same | |
| CN104532201A (en) | Method for preparing molybdenum-titanium alloy sputtering target board | |
| CN107208259A (en) | Chromium titanium alloy sputtering target material and its manufacture method | |
| CN108103464A (en) | A kind of preparation method of Fe, Al, Co, Cu, Cr, Mn alloy target material | |
| CN104174851B (en) | A kind of Co-Cr-Pt-SiO2The preparation method of target | |
| CN110818404A (en) | Novel preparation method of high-density ITO target | |
| JP2001059170A (en) | Sputtering target | |
| WO2003104522A1 (en) | Fabrication of ductile intermetallic sputtering targets | |
| CN101229976A (en) | Method for preparing high-performance WC/MgO nano composite material | |
| CN111719125A (en) | Mo alloy target material and manufacturing method thereof | |
| CN107520419B (en) | A kind of aluminium alloy electronics chip tray and its preparation process | |
| CN108026631A (en) | Magnetic film formation sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230616 Address after: No. 988, Keji Road, high tech Industrial Development Zone, Kunming, Yunnan 650000 Patentee after: Yunnan Precious Metals Laboratory Co.,Ltd. Address before: 650106 No. 988 Science and Technology Road, Kunming High-tech Development Zone, Kunming City, Yunnan Province (Kunming Institute of Precious Metals) Patentee before: Sino-Platinum Metals Co.,Ltd. |