JP2006326754A - Polishing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device having extremely excellent practical use which can perform excellent polishing even if a pattern shape or thin film made of a soft material or a hard material is formed on the surface of the substrate. <P>SOLUTION: The polishing device polishing the surface of the substrate 1 is equipped with a polishing head P having a polishing material where a lot of hair-like bodies 32 having flexibility and integrating abrasive grains 31 are formed on the base surface 33. The surface of the substrate 1 can be scraped with the hair-like bodies 32 integrating the abrasive grains 31 by oscillating the polishing material or the substrate 1 in such a state that the polishing material provided on the polishing head P is contacted to the surface of the substrate 1. The length and the flexibility of the hair-like bodies 32 are set so that not only the protruded part of the top face of the irregularity part, but also the recessed part of the bottom face can be polished when the polishing material is contacted to the surface of the substrate having irregularity part. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a polishing apparatus.

  As a substrate cleaning apparatus for cleaning an ITO film formed on a glass substrate, an IC wafer, a glass substrate for liquid crystal or the like, there is one disclosed in, for example, Japanese Patent Application Laid-Open No. 2004-322305 (Patent Document 1). .

  This substrate cleaning device sharpens the surface of the substrate by polishing, and removes unnecessary materials such as particles, dirt, organic residues, metal residues, oxide films, sputtering protrusions, etc. adhering to the surface and cleans them. This is useful, for example, in the field of organic EL manufacturing, where the cleanliness of the substrate can be greatly increased and manufacturing in a very clean state is required.

JP 2004-322305 A

  By the way, the polishing material surface of the polishing apparatus for extremely thinly cutting the substrate surface of the conventional substrate cleaning apparatus has a surface shape in which a large number of fine protrusions having a trapezoidal cross-sectional shape are regularly arranged, For example, when only a flat ITO film is formed on the substrate, good polishing is possible. For example, an ITO film and a TFT element portion having a thickness of about 1 μm are formed on the ITO film. When polishing a substrate having a concavo-convex portion (step) on the surface, when one projection arranged in parallel on the polishing surface comes into contact with the top surface of the TFT element portion (convex portion), an ITO film between the TFT element portions ( The protrusion formed on the polishing surface may not reach the bottom surface of the recess), and the ITO film that needs to be polished may not be polished well.

  In view of the present situation as described above, the present invention is based on the surface shape of the substrate by satisfactorily polishing the ITO film or the like on the bottom surface of the concave portion even when the pattern shape or thin film is formed on the substrate and the substrate surface has the concave and convex portions. The substrate surface can be reliably cleaned, and even if the pattern shape or thin film formed on the substrate surface is made of a soft material or a low hardness material, excellent polishing is possible and excellent in practicality. A polishing apparatus is provided.

  The gist of the present invention will be described with reference to the accompanying drawings.

  A polishing apparatus for polishing the surface of a substrate 1, comprising a polishing head P provided with a polishing material in which a large number of hairs 32 having flexibility and integrated with abrasive grains 31 are formed on a base surface 33. The surface of the substrate 1 can be shaved by the hair 32 having the abrasive grains 31 integrated by swinging the polishing material or the substrate 1 in a state where the polishing material provided on the head P is in contact with the surface of the substrate 1. The length of the hairs 32 is configured so that when the polishing material is brought into contact with the surface of the substrate 1 having a concavo-convex portion, not only the convex top surface of the concavo-convex portion but also the concave bottom surface can be polished. In addition, the present invention relates to a polishing apparatus characterized by setting flexibility.

  Further, a polishing apparatus for polishing the surface of the substrate 1, a polishing head P provided with a polishing material in which a plurality of hairs 32 having flexibility integrated with abrasive grains 31 are formed on a base surface 33, A contact mechanism capable of bringing the polishing material provided on the polishing head P into contact with the surface of the substrate 1 so that a large number of hairs 32 formed on the polishing material bend along the surface of the substrate 1, and the hair of the polishing material The substrate having a polishing member or a swinging mechanism for scraping the surface of the substrate 1 by swinging the substrate 1 in a state where the shaped body 32 is in contact with the surface of the substrate 1 so as to be bent, and the polishing material has the uneven portion. The length and flexibility of the ciliary body 32 are set so that not only the top surface of the convex portion but also the bottom surface of the concave portion can be polished when brought into contact with one surface. Those of the device.

  The hair-like body 32 of the polishing material is made of a resin having a thickness and a length of 5 to 50 µm and 30 to 300 µm, respectively. This relates to a polishing apparatus.

  4. The polishing apparatus according to claim 3, wherein the abrasive grains 31 integrated with the polishing material are ceramics having an average particle diameter of 1.0 [mu] m or less.

  Further, the tape-like polishing material is stretched between the reels 12 so as to be unwound from one reel 12 and wound around the other reel 12, and the tape-like polishing material stretched between the reels 12 is stretched between the reels 12. A polishing material is brought into contact with or separated from the surface of the substrate 1 or the surface of the substrate 1 to be polished is brought into contact with and separated from the tape-like polishing material stretched between the reels 12, and the surface of the substrate 1 is shaved by polishing. 5. The polishing apparatus according to claim 1, wherein the polishing head P and the substrate 1 are configured as described above.

  In addition, when the high pressure jet cleaning unit 6 is provided, the nozzle unit 5 attached to the high pressure jet cleaning unit 6 is suspended before the work that has been scraped off the surface of the substrate 1 by the jet jet and detached from the surface of the substrate 1 is reattached to the surface of the substrate 1. The polishing apparatus according to claim 1, wherein the polishing apparatus is disposed at a position where the polishing apparatus can be removed.

  Further, the high-pressure jet cleaning section 6 has a nozzle section 5 that can be arranged along the length direction of the polishing head P on which a tape-shaped polishing material is provided. A plurality of nozzles are formed so that they can be cleaned, or a jet jet that is jetted has a nozzle having a predetermined shape that can clean a width region that is larger than the width of the substrate. The polishing apparatus according to any one of claims 1 to 6, wherein the polishing apparatus is arranged in a juxtaposed manner along the head P.

  Further, the polishing head P is disposed so that the length direction of the tape-like polishing material provided in the polishing head P is in a direction intersecting the substrate transport direction, and the polishing material P with respect to the surface of the substrate 1 The polishing apparatus according to claim 1, further comprising a mechanism that can freely adjust the pressure.

  The polishing apparatus according to claim 1, wherein the transport unit 11 that transports the substrate 1 is configured to transport the substrate 1 while being inclined with respect to the horizontal. It is related to.

  Further, the polishing head P or the polishing material of the polishing head P reciprocates in the length direction, and the substrate 1 advances while reciprocating or circularly oscillating in the transport direction. The polishing apparatus according to claim 1, wherein the polishing material and the substrate 1 are relatively moved in different directions.

  In addition, one or a plurality of the polishing heads P, the high-pressure jet cleaning unit 6 and the drying processing unit 8 are arranged in a line for transporting the substrate 1 so that each processing can be performed in series. Item 11. The polishing apparatus according to any one of Items 1 to 10.

  Since the present invention is configured as described above, it is possible to clean the substrate surface reliably regardless of the surface shape of the substrate by satisfactorily polishing the ITO film or the like corresponding to the bottom of the recess even if the substrate surface has an uneven portion, Moreover, even if a pattern shape or a thin film made of a soft material or a low hardness material is formed on the surface of the substrate, the polishing apparatus can be excellently polished and has excellent practicality.

  Further, in the inventions according to claims 2 to 5, the substrate surface polishing / cleaning apparatus can be realized more easily and more excellent in practicality.

  In the invention described in claims 6 to 11, the nozzle attached to the high-pressure jet cleaning unit is disposed in the vicinity of the polishing head, so that jet cleaning can be performed immediately after polishing, and the workpiece detached from the substrate surface by polishing can be removed. This is a very breakthrough that can be reliably removed before reattachment.

  That is, for example, the polishing of the ITO film surface of the glass substrate can be accurately performed, the cleanliness can be increased to the limit, and if configured as described in claim 11, for example, it can be easily installed as an integrated device in a clean room. .

  If there are multiple polishing heads, for example, the first stage is a polishing condition for cleaning particles, the second stage is a polishing condition for cleaning residues before the process, and the third stage is a polishing condition for cleaning film-like dirt. Thus, by setting optimum polishing conditions for each polishing head, better substrate cleaning can be realized.

  Embodiments of the present invention that are considered suitable (how to carry out the invention) will be briefly described with reference to the drawings, illustrating the operation of the present invention.

  A polishing material provided on the polishing head P is brought into contact with the surface of the substrate 1, the polishing material and the substrate 1 are relatively swung, and the surface of the substrate 1 is extremely thinly polished by polishing. At this time, a large number of flexible resin hairs 32 provided on the base surface 33 of the polishing material are brought into contact with the surface of the substrate 1 so as to be bent. The surface of the substrate 1 can be polished by the abrasive grains 31.

  Accordingly, the resin hair 32 is flexibly bent even on the surface of the substrate 1 where the uneven portion that could not be satisfactorily polished conventionally, and the resin hair 32 is used as the uneven portion, for example, an electrode. Even if it comes into contact with the top surface of the part, the resinous hair-like body 32 that has come into contact is bent so that another resinous hair-like body 32 can reach the bottom surface of the recess (for example, an ITO film). It is possible to polish not only the top surface but also the bottom surface of the concave portion, and regardless of the surface shape of the substrate 1, even if the surface of the substrate 1 is flat or uneven, polishing can be performed satisfactorily. .

  Moreover, the polishing of the surface of the substrate 1 by the flexible resin hair 32 is performed, for example, even if a soft thin film or the like is formed on the surface of the substrate 1, the fine abrasive grains and the resin hair are soft. The touch can be performed without damaging the thin film.

  That is, the surface of the substrate 1 can be satisfactorily polished even if there is an uneven portion or a soft thin film as described above. For example, when forming an organic EL, a substrate having a step or a protective film is completed. The organic film can be cleaned immediately before the organic film is formed, and the organic film can be formed with very little dust attached to the substrate, and a high-quality organic EL with extremely few defects can be formed. become.

  For example, a substrate that can polish the ITO film regardless of the protrusion of 1 μm or a soft resin such as polyimide as a protective film for a substrate whose ITO film is approximately 1 μm lower than the TFT element portion, such as a TFT substrate On the other hand, it can be polished without damaging the protective film, or an insulating film with a thickness of about 1 μm made of a soft resin such as polyimide on the ITO film, like an organic EL passive substrate, and a height of about The ITO film can be polished without damaging the insulating film and without breaking the triangular shape even on a substrate with a 2 μm triangular cathode barrier, or once attached like a Cr film or an alloy film Thus, it is possible to polish a film in which it is difficult to remove the particles.

  Accordingly, the present invention can clean the substrate surface reliably regardless of the surface shape of the substrate by satisfactorily polishing the ITO film or the like on the bottom surface of the recess even if the substrate surface has an uneven portion. Even if a pattern shape or a thin film made of a soft material or a low hardness material is formed, the polishing apparatus can be excellently polished and has excellent practicality.

  Further, for example, the tape-shaped polishing material is stretched between the reels 12 so as to be wound out from one reel 12 and wound around the other reel 12, and the tape is stretched between the reels 12. In the case where the polishing head P is configured such that the surface of the substrate 1 is brought into contact with the surface of the substrate 1 and the surface of the substrate 1 can be extremely thinly polished by polishing, the unused portion of the tape-shaped polishing material can be easily removed. It is possible to easily draw out the used part and wind up the used part, and to always polish the new part, and it is easy to replace.

  Further, for example, the tape-like polishing material or the substrate 1 stretched between the reels 12 of the polishing head P is applied to the tape-like polishing material stretched between the substrate 1 or the reels 12 of the polishing head P. Thus, the degree of contact between the polishing material and the surface of the substrate 1 can be easily adjusted.

  For example, when the high-pressure jet cleaning unit 6 having the nozzle unit 5 that blows a high-pressure jet jet on the surface of the substrate 1 is provided at a position where the work removed by the polishing and detached from the surface of the substrate 1 can be removed. The surface of the substrate 1 (for example, an organic EL ITO film substrate, an IC wafer, a liquid crystal glass substrate, etc.) is extremely thinly polished (0.5 nm to 20 nm) by polishing, and particles and dirt adhering to the surface are removed. -Unnecessary substances such as organic residue, metal residue, oxide film, sputtering projections, etc. are removed from the surface, and the high pressure jet jet is applied to the surface of the substrate 1 where the unnecessary objects (workpiece) detached from the surface of the substrate 1 are removed by polishing. By spraying, it becomes possible to polish and clean the surface of the substrate 1. At this time, the polishing material of the polishing head P is used as a polishing material. After polishing the surface of the substrate 1 Ri, i.e., it can be removed cut material generated by cutting very thin surface of the substrate 1 by policing blowing a high-pressure jet flow.

  Specifically, the workpiece is detached from the surface of the substrate 1 and is floating on the surface of the substrate 1, that is, before the detached workpiece is attached to the surface of the substrate 1 again, the workpiece is removed by a high-pressure jet jet. It can be surely blown away from one surface for removal.

  That is, by immediately blowing off the workpiece cut by polishing from the surface of the substrate 1, it is possible to prevent the reattachment of the workpiece to the surface of the substrate 1 and to reliably remove the workpiece detached from the surface of the substrate 1. It becomes possible to do. In other words, particles, dirt, organic residues, metal residues, oxide films, sputtering protrusions, etc. that adhere to the surface of the substrate 1 and cannot be removed by simply spraying a high-pressure jet jet are removed. Since it can be easily blown away by a high-pressure jet jet by separating it from the surface of the substrate 1 by polishing and leaving it in a floating state, particles, dirt, organic residue, metal residue, oxide film, Unnecessary objects such as sputtering protrusions can be reliably removed.

  That is, by polishing the surface of the substrate 1 very thinly, polishing that can surely remove unnecessary objects on the surface from the surface of the substrate 1, and without pressing the floating workpiece on the surface of the substrate 1, that is, without fear of reattaching. By using in combination with a high-pressure jet jet that can be removed by blowing it through a liquid such as water, it is possible to obtain a very excellent cleaning effect that can never be obtained when these are used separately.

  Further, for example, moisture is completely removed, static electricity is removed, and a clean substrate 1 surface is formed.

  The work of these contents is realized by arranging and installing units such as polishing head, high pressure jet water jet, rotating brush cleaning, air knife drainer, clean hot air blow, etc. side by side, with a small, simple and clean device Can be installed in a clean room. For example, only pure water is used for polishing, and no waste liquid treatment is required, and particles, dirt, organic residues, metal residues, oxide films, sputtering protrusions, etc. adhering to the surface are unnecessary. An apparatus capable of completely removing objects and increasing the cleanliness of the substrate to the limit can be configured.

  Further, for example, when the polishing head P having the belt-like polishing surface 4 constituted by the tape-like polishing film 2 is configured to perform polishing by swinging relative to the substrate 1, for example, one side The polishing film 2 unwound from the reel 12 is wound around the other reel 12, and the polishing film 2 stretched between the reels 12 is brought into contact with the surface of the substrate 1 so that the substrate is fixed to the polishing head P. In the case where the surface of the substrate 1 is polished by moving 1, the winding tape method is adopted in this way, so that the entire apparatus can be easily made compact, and the polishing film for this polishing is used. 2 can be easily replaced.

  Further, the tension of the polishing film 2 can be easily adjusted, the polishing film 2 (polishing material) is reciprocated in the length direction, and the substrate 1 is reciprocated or circularly oscillated in the traveling direction. By moving 1, the polishing film 2 and the substrate 1 are relatively moved in different directions, and the entire substrate 1 is uniformly polished without unevenness, so that better polishing can be performed.

  The period of the reciprocating motion between the polishing head P and the substrate 1 may be set to be the same or different.

  Further, if the polishing head P having the strip-shaped polishing material is brought into contact with the substrate 1 in the inclined state with respect to the conveying direction of the substrate 1 to perform polishing, specifically, the substrate 1 is inclined with respect to the horizontal. If it is configured so as to be transported to the state, the drainage is improved.

  In addition, when there are a plurality of polishing heads, for example, the first stage is a polishing condition for cleaning particles, the second stage is a polishing condition for cleaning residues of the previous process, and the third stage is a polishing condition for cleaning film-like dirt. As described above, by setting optimum polishing conditions for each polishing head, better cleaning can be performed.

  Further, for example, by arranging the polishing head P, the high-pressure jet cleaning unit 6 and the drying processing unit 8 that are close to the polishing head P and arranging them on the conveyance line of the substrate 1, each processing can be performed in series, and cleaning and drying can be performed immediately after polishing. It is possible to carry out extremely good cleaning.

  A specific embodiment 1 of the present invention will be described with reference to FIGS.

  In the polishing head P of Example 1, a pair of reels 12 are provided on a fixed plate 14 provided in a drive device 13 (air cylinder) for contact and separation movement, and a polishing film 2 (polishing) as a polishing material is provided from the one reel 12. The tape 2) is unwound and wound on the other reel 12, and the polishing film 2 is stretched downward to form a polishing surface 4 that comes into contact with the surface of the substrate 1.

  Therefore, if it is worn out, it is wound up, and the reels 12 can be exchanged, so that the exchange is easy.

  Further, as the polishing film 2, as shown in FIG. 6, a flexible hair 32 having a base surface 33 (base film) coated with abrasive grains 31 having a particle size of 1.0 μm or less is formed on the base surface 33. It is advisable to use a large number of them. Specifically, the average particle diameter is preferably 1.0 μm or less, more preferably 0.5 μm or less, and ceramic abrasive grains are integrated, and the thickness (diameter) and length are preferably 5 to 50 μm, respectively. It is preferable to employ a material in which a resin hair 32 having a thickness of 5 to 30 μm and 50 to 150 μm is implanted in a base film of 25 to 50 μm, more preferably 30 to 300 μm. Specific examples of the ceramics include silicon oxide, aluminum oxide, cerium oxide, silicon carbide, and silicon nitride. In this case, if the average particle diameter exceeds 1 μm, scratches may remain on the substrate surface due to polishing, which is not preferable. The average particle diameter means a 50% weight cumulative particle diameter. Specifically, it can be known by measuring with a laser diffraction particle size distribution meter or the like.

  Furthermore, since the ciliary body needs to be flexible and strong enough to withstand repeated bending and be able to be integrated with abrasive grains, the material is preferably a resin. Specifically, a cellulose regenerated resin such as rayon, or a general-purpose resin such as polyamide or polyester can be used. In this case, the thickness (diameter) of the ciliary body is preferably 5 to 50 μm, but if it is smaller than 5 μm, it becomes difficult to integrate with the resin, and if it exceeds 50 μm, the bending performance deteriorates, which is not preferable. Further, the length of the hair is preferably 30 to 300 μm, but if it is shorter than 30 μm, the coverage with respect to the irregularities on the substrate becomes insufficient, and if it is longer than 300 μm, it is difficult to adjust the pressure when shaving. The hair and the abrasive are integrated as a polishing material. The method includes coating the abrasive on the resin surface of the hair and uniformly kneading the abrasive into the resin to obtain a hair. Can be used. It suffices if the abrasive grains are fixed on the surface of the ciliary body during use and the substrate surface can be ground.

  By adopting such a polishing material, for example, an ITO film 34 is formed on the glass substrate 1, and a TFT element portion 35 having a thickness of about 1 μm is formed on the ITO film 34. However, not only the top surface (convex surface) of the FTF element portion 35 but also the ITO film 34 (concave surface) can be polished without fail.

  Further, a polishing plate 9 is disposed as a base 9 below the fixed plate 14, a cushioning material 10 is supported and abutted against the polishing plate 9, and the polishing polishing film 2 is stretched over the cushioning material 10. When the polishing surface 4 formed by the polishing film 2 is pressed and brought into contact with the substrate 1, the base surface 33 is also pressed with an appropriate strength so as not to contact the surface of the substrate 1. . That is, the resin hair 32 is slightly bent along the surface of the substrate 1 so that the surface of the substrate 1 can be polished by the fine abrasive grains 31 present on the body of the resin hair 32. It is configured.

  In the first embodiment, the polishing surface 4 is not a base surface 32 but a virtual concept formed by a resinous hair 32 that is planted on the base surface 32 and contacts the surface of the substrate 1. is there.

  A reciprocating mechanism 15 is also provided for reciprocating the base 9 to reciprocate the polishing film 2 (polishing surface 4) in the length direction.

  Further, a tape fixing body 16 (toggle mechanism) for fixing the polishing film 2 to the base 9 by pressing the left and right sides of the polishing film 2 wound around the base 9 (via the cushion material 10) is provided. The tape fixing mechanism 16 is pressed so that no slip occurs between the polishing film 2 and the polishing plate 9 during polishing (the tension of the polishing film 2 can be adjusted by adjusting the pressure). Also, it is configured to perform very good polishing by adjusting and installing each.

  Further, the polishing head P is pressed against the substrate 1 by the linear motion mechanism by the air cylinder 13 during polishing. The pressing force can be set to the optimum condition by air pressure.

  Further, in Example 1, two polishing heads P are arranged side by side in the substrate conveyance direction, and a high-pressure jet cleaning unit 6 is arranged side by side before and after this, and the pressure applied to the polishing head P, the reciprocating frequency, and the polishing film 2 Each type is selected so that the first polishing can be performed with rough polishing, and the second polishing can be performed with fine polishing.

  Further, as described above, the polishing head P is reciprocated in the longitudinal direction, and the table 1 to which the substrate 1 is attached is moved forward and backward while reciprocating or circularly oscillating in the traveling direction. By making the polishing film 2 and the substrate 1 move in different directions relatively, the entire substrate 1 can be uniformly polished without unevenness.

  Further, a high-pressure jet jet (high-pressure jet cleaning section 6) for jetting water or a cleaning liquid (polishing liquid) toward the position polished by the polishing head P is disposed in parallel with the polishing head P. ing.

  The high-pressure jet cleaning section 6 is a high-pressure jet jetting pipe having a nozzle section 5 in the length direction, and the high-pressure jet cleaning section 6 is disposed in parallel with the polishing head P in proximity to each other. Therefore, the high pressure jet jet can be blown and cleaned immediately after polishing.

  In the first embodiment, the transport unit 11 that transports the substrate 1 includes an inclined transport guide that can transport the substrate 1 while holding the substrate 1 in an inclined state. It is configured to be conveyed in one direction. Specifically, it is configured such that it is vacuum chucked on an angled table 17 and is conveyed while being swung, so that each process is further improved.

  The polishing head P and the high-pressure jet cleaning unit 6 are juxtaposed in the transport direction (transport line), and further, a rotating brush as the cleaning unit 7, an air knife drainer and a clean hot air blow as the drying processing unit 8, These devices can be processed in an integrated manner, can be made compact and have a simple configuration, and realize an extremely excellent polishing and cleaning / drying device.

  Further, the polishing head P is provided in an inclined state with respect to the transport direction of the substrate 1, and the high-pressure jet cleaning unit 6 is also provided in an inclined state along this.

  That is, the polishing head P having the belt-like polishing surface 4 is in contact with the substrate 1 in the inclined state with respect to the transport direction of the substrate 1 to perform polishing.

  By setting the inclined state instead of the orthogonal state, the polishing liquid spreads over the entire polishing film 2 and the substrate 1 can be uniformly polished.

  Further, by providing the high-pressure jet cleaning unit 6 in parallel with the polishing head P, jet cleaning can be performed immediately after polishing, and the sprayed water or cleaning liquid (polishing liquid) is transferred in the transport direction by the polishing head P. On the other hand, since it is inclined, the entire polishing film 2 is easily spread uniformly, and polishing can be performed uniformly.

  In addition, since the substrate 1 is transported in an inclined state with respect to the horizontal, the polishing head P is tilted with the tilt of the substrate 1, and the polishing head P is also tilted with respect to the transport direction of the substrate 1. Therefore, it is easier to spread, drainage is improved, and polishing and cleaning are further improved.

  In the first embodiment, the polishing liquid ejected from the high-pressure jet cleaning unit 6 is pure water only, so that no waste liquid treatment is required, and the above-described configuration enables good cleaning with pure water.

  Further, when polishing with the polishing film 2 fixed to the polishing head P, water from the high-pressure nozzle of the high-pressure jet cleaning unit 6 is applied to clean the abrasive grains of the polishing film 2 or particles detached from the substrate 1 immediately, This water also serves as a polishing liquid supply to the polishing film 2.

  In addition, after polishing and high-pressure jet cleaning, the rotating brush is rotated to remove the remaining particles, etc. from the substrate 1, and further removed with a high-pressure jet jet, and then drained with an air knife as a draining process, and further clean hot air The substrate is dried to the extent that there is no damage to the substrate with a blow or heating lamp, and in some cases, UV irradiation is performed.

  As described above, Example 1 becomes an apparatus that can be installed in a clean room as an integrated apparatus capable of performing a series of processes such as polishing, cleaning, vacuum heating and drying, further UV irradiation, static electricity removal, etc. In the case of EL, it can be connected to a vapor deposition machine for depositing an organic film. Moreover, the number of particles having a size of 1.0 μm or less can be very small.

  In addition, when an organic EL device is manufactured, dark spots are reduced, pixel shorts are reduced, the contact property of the hole transport layer is good, IL characteristics, leakage current, etc. are improved, and the device quality is improved.・ Reliability is improved, cost reduction is achieved by in-house polishing, and a small space production line can be realized.

  A specific embodiment 2 of the present invention will be described with reference to FIGS.

  As shown in FIG. 7, the polishing head P according to the second embodiment is provided with a pair of reels 12 on a fixed plate 14 and a driving device 13 (air cylinder) for contact and separation movement. The polishing plate 9 is driven to move toward and away by driving a support body 21 that supports the polishing plate 9, and the polishing film 2 (polishing tape 2) as a polishing material is unwound from the one reel 12. The polishing film 2 is stretched downwardly so as to be wound around the other reel 12 to form a polishing surface 4 in contact with the surface of the substrate 1. In addition, the same code | symbol was attached | subjected to the same component as Example 1. FIG.

  Therefore, if it is worn out, it is wound up, and the reels 12 can be exchanged, so that the exchange is easy.

  Further, as the polishing film 2, as in Example 1, a flexible hair 32 having a base surface 33 (base film) coated with abrasive grains 31 having a particle size of 1.0 μm or less is formed on the base surface 33. It is advisable to employ a large number of formed particles. Specifically, the average particle diameter is preferably 1.0 μm or less, more preferably 0.5 μm or less, and the thickness (diameter) is integrated. It is preferable to employ a resin hair 32 having a length of 5 to 50 μm and 30 to 300 μm, more preferably 5 to 30 μm, and more preferably 50 to 150 μm, and a base film having a length of 25 to 50 μm.

  By adopting such a polishing material, for example, an ITO film 34 is formed on the glass substrate 1, and a TFT element portion 35 having a thickness of about 1 μm is formed on the ITO film 34. However, not only the top surface (convex surface) of the TFT element portion 35 but also the ITO film 34 (concave surface) can be polished without fail.

  Further, the cushioning material 10 is supported and abutted against the polishing plate 9, and the polishing film 2 is stretched over the cushioning material 10, and the polishing surface 4 formed by the polishing film 2 is pressed against the substrate 1. At this time, even the base surface 33 is configured to be pressed with an appropriate strength so as not to contact the surface of the substrate 1. That is, the resin hair-like body 32 is slightly bent along the surface of the substrate 1 on the surface of the substrate 1, and the surface of the substrate 1 is polished by the minute abrasive grains 31 existing around the body of the resin hair-like body 32. Configure to get.

  In the second embodiment, the polishing surface 4 is not a base surface 32 but a virtual concept formed by a resinous hair 32 that is planted on the base surface 32 and contacts the surface of the substrate 1. is there.

  Further, the support body 21 of the second embodiment includes a base portion 21a, an arm portion 21b attached to the base portion 21a, and a support portion 21c supported by the tip portion of the arm portion 21b and supporting the polishing plate 9. In Example 2, the arm portion 21b is configured to stretch the polishing film 2 by always biasing the polishing plate 9 downward (via the support portion 21c) by an appropriate elastic member. Therefore, even if the substrate 1 has irregularities and undulations, it can be satisfactorily polished by the expansion and contraction of the appropriate elastic member, and from this point, it can be satisfactorily polished. The appropriate elastic member may be provided on the arm portion 21b so that the arm portion 21b can be expanded and contracted. Alternatively, the appropriate elastic member may be provided on the base portion 21a so that the arm portion 21b moves up and down by the expansion and contraction of the elastic member. You may comprise.

  In the second embodiment, as the swing mechanism for swinging the polishing head P relative to the substrate 1, the base 9 is reciprocated to reciprocate the polishing film 2 (polishing surface 4) in the length direction. A reciprocating mechanism (not shown) for movement is provided.

  Further, an adjusting mechanism 22 (guide roller) for adjusting the degree of tension of the polishing film 2 wound around the substrate 9 is provided between the pair of reels 12 and the longitudinal ends of the cushioning material 10 respectively. So that the adjustment mechanism 22 can be moved toward and away while the polishing film 2 is supported by the adjustment mechanism 22 so that the degree of tension of the polishing film 2 can be adjusted and very good polishing can be performed. It is composed. Specifically, in a state where the polishing film 2 is held between a pair of guide rollers, the pair of guide rollers are moved toward and away from each other to adjust the degree of tension of the polishing film 2. In the figure, reference numeral 23 denotes a fixed roller.

  Further, the polishing head P is pressed against the substrate 1 by the linear motion mechanism by the air cylinder 13 during polishing. The pressing force can be set to the optimum condition by air pressure.

  Further, in the second embodiment, as shown in FIGS. 8 and 9, two polishing heads P are arranged side by side in the substrate conveyance direction, and the high-pressure jet cleaning units 6 are arranged in parallel at the upper and lower positions in the substrate conveyance direction. Then, the pressing force of the polishing head P, the reciprocating frequency, and the type of the polishing film 2 are respectively selected so that the first polishing can be performed with rough polishing and the second polishing can be performed with fine polishing. It should be noted that other configurations such as a configuration in which the polishing head P is integrally provided or a configuration in which three or more bodies are provided may be used, and the high-pressure jet cleaning unit 6 may be located at an upper position in the substrate transport direction of the polishing head P or It is good also as a structure provided in either one of lower positions.

  Further, as described above, the polishing head P is reciprocated in the longitudinal direction, and the table 1 to which the substrate 1 is attached is moved forward and backward while reciprocating or circularly oscillating in the traveling direction. By making the polishing film 2 and the substrate 1 move in different directions relatively, the entire substrate 1 can be uniformly polished without unevenness.

  In addition, a high-pressure jet jet (high-pressure jet cleaning unit 6) that jets water or a cleaning liquid (polishing liquid) toward the position polished by the polishing head P is disposed in parallel with the polishing head P. ing.

  The high-pressure jet cleaning section 6 is a long high-pressure jet jet jet pipe having a nozzle section 5 in the length direction, and the high-pressure jet cleaning section 6 is arranged side by side close to the polishing head P. Immediately after polishing by the polishing surface 4, a high-pressure jet jet can be blown and cleaned. Moreover, it is good also as a structure which arranged the nozzle part 5 in multiple numbers in the length direction.

  The high-pressure jet cleaning unit 6 is removed by the high-pressure jet jet sprayed from the nozzle unit 5 before the work that is detached from the surface of the substrate 1 by the polishing and floats on the surface of the substrate 1 adheres to the substrate 1 again. It is provided at the position to obtain. Specifically, it is provided in the proximity position of the polishing head P so that the floating workpiece can be removed. However, if it is a position where the floating workpiece can be removed, it is close to the polishing head P. For example, when the apparatus is integrated, the polishing head P and the high-pressure jet cleaning unit 6 are installed slightly apart so that the step of polishing and the step of blowing the high-pressure jet jet are performed with a slight time difference. It is good also as a structure.

  Further, the nozzle portion 5 of the high-pressure jet cleaning unit 6 is configured to blow a high-pressure jet jet on a portion where the polishing head P and the surface of the substrate 1 are in contact with each other or in the vicinity thereof. It is set so as to face the interview part side with the surface of the substrate 1.

  Further, in the second embodiment, the transport unit 11 that transports the substrate 1 is configured by an inclined transport guide that can transport the substrate 1 while holding the substrate 1 in an inclined state. It is configured to be conveyed in one direction. Specifically, it is configured such that it is vacuum chucked on an angled table 17 and is conveyed while being swung, so that each process is further improved.

  In the second embodiment, the polishing head P and the substrate 1 are configured to perform good polishing by relatively moving the polishing head P and the substrate 1 in different directions. For example, the polishing head P is arranged in a direction orthogonal to its length direction. Any configuration may be adopted as long as the polishing film 2 and the substrate 1 are moved relatively in different directions, such as a configuration in which the substrate 1 is swung in a direction orthogonal to the conveying direction. good.

  The polishing head P and the high-pressure jet cleaning unit 6 are arranged in parallel in the transport direction (transport line), and an air knife 24 for removing moisture and a heating lamp 30 for drying the substrate are disposed as the drying processing unit 8. These devices are integrated into a device that is compact and simple in construction, and realizes an extremely excellent polishing, cleaning and drying device.

  Further, the polishing head P is provided in a state orthogonal to the conveyance direction of the substrate 1, and the high-pressure jet cleaning unit 6 is also provided in an orthogonal state along this.

  In other words, the polishing head P having the belt-like polishing surface 4 is in contact with the substrate 1 in a state orthogonal to the transport direction of the substrate 1 to perform polishing.

  By making the orthogonal state, the surface of the substrate 1 can be uniformly polished, and the polishing can be efficiently performed.

  Furthermore, jet cleaning can be performed immediately after polishing by providing the high-pressure jet cleaning unit 6 in parallel with the polishing head P.

  In addition, since the substrate 1 is transported in a state inclined with respect to the horizontal, the drainage is good and the cleaning is further improved.

  Further, in Example 2, the polishing liquid ejected from the high-pressure jet cleaning unit 6 is pure water only, so that waste liquid treatment is not required, and good cleaning can be performed even with pure water by the above configuration.

  Further, when polishing with the polishing film 2 fixed to the polishing head P, water from the high-pressure nozzle of the high-pressure jet cleaning unit 6 is applied to clean the abrasive grains of the polishing film 2 or particles detached from the substrate 1 immediately, This water also serves as a polishing liquid supply to the polishing film 2.

  Further, after polishing and high-pressure jet jet cleaning, moisture is removed with an air knife 24, and further dried with an infrared lamp 30, and UV irradiation is performed in some cases.

  As described above, Example 2 becomes an apparatus that can be installed in a clean room as an integrated apparatus capable of performing a series of processes such as polishing, cleaning, vacuum heating and drying, further UV irradiation, static electricity removal, etc. In the case of EL, it can be connected to a vapor deposition machine for depositing an organic film. Moreover, the number of particles having a size of 1.0 μm or less can be very small.

  In addition, when an organic EL device is manufactured, dark spots are reduced, pixel shorts are reduced, the contact property of the hole transport layer is good, IL characteristics, leakage current, etc. are improved, and the device quality is improved.・ Reliability is improved, cost reduction is achieved by in-house polishing, and a small space production line can be realized.

  The present invention is not limited to the first and second embodiments, and the specific configuration of each component can be designed as appropriate.

FIG. 2 is a schematic configuration explanatory diagram of a polishing head of Example 1. It is explanatory drawing at the time of the polishing of Example 1. FIG. 1 is a plan view illustrating a schematic configuration of Embodiment 1. FIG. 1 is a side view illustrating a schematic configuration of Example 1. FIG. It is schematic structure explanatory front view (Example A arrow A figure of FIG. 4) of Example 1. FIG. It is an expansion outline explanatory sectional view of a polishing material. FIG. 5 is a schematic configuration explanatory diagram of a polishing head of Example 2. 6 is a plan view illustrating a schematic configuration of Example 2. FIG. It is a schematic configuration explanatory side view of Example 2.

Explanation of symbols

1 Substrate 5 Nozzle section 6 High-pressure jet cleaning section 8 Drying section
11 Transport section
12 reels
31 Abrasive grain
32 Resin hair
33 Base surface P Polishing head

Claims (11)

  A polishing apparatus for polishing the surface of a substrate, comprising a polishing head provided with a polishing material in which a large number of flexible hairs integrated with abrasive grains are formed on a base surface, and the polishing head is provided with this polishing head The polishing material or the substrate is rocked in a state where the material is in contact with the substrate surface so that the substrate surface can be scraped by the hair body integrated with the abrasive grains, and the polishing material has an uneven portion. A polishing apparatus characterized in that the length and flexibility of the ciliary body are set so that when contacting the surface of the substrate, not only the top surface of the projections but also the bottom surface of the recesses can be polished. .   A polishing apparatus for polishing the surface of a substrate, a polishing head provided with a polishing material in which a plurality of abrasive hairs and a flexible bristle body are formed on a base surface, and a polishing provided on the polishing head A contact mechanism capable of bringing the material and the substrate surface into contact with each other so that a large number of hairs formed on the polishing material bend along the surface of the substrate, and the hair of the polishing material so as to bend along the surface of the substrate When the polishing material is brought into contact with the substrate surface having the concavo-convex portion, the top surface of the convex portion of the concavo-convex portion is provided. A polishing apparatus characterized in that the length and flexibility of the ciliary body are set so that not only the bottom surface of the recess can be polished.   The polishing apparatus according to any one of claims 1 and 2, wherein the hair of the polishing material is made of a resin having a thickness and a length of 5 to 50 µm and 30 to 300 µm, respectively.   The polishing apparatus according to claim 3, wherein the abrasive grains integrated with the polishing material are ceramics having an average particle diameter of 1.0 μm or less.   The tape-shaped polishing material is stretched between the reels in a state where the tape-shaped polishing material can be unwound from one reel and wound on the other reel, and the tape-shaped polishing material stretched between the reels is stretched between the reels. Alternatively, the polishing head and the substrate are configured such that the surface of the substrate to be polished is brought into contact with and separated from the tape-shaped polishing material stretched between reels so that the substrate surface can be scraped by polishing. The polishing apparatus according to any one of claims 1 to 4, wherein the polishing apparatus is characterized.   When providing the high-pressure jet cleaning section, the nozzle section attached to the high-pressure jet cleaning section is placed at a position where it can be removed prior to reattaching to the substrate surface by floating the scraped material removed from the substrate surface by the jet jet and removed from the substrate surface. The polishing apparatus according to claim 1, wherein the polishing apparatus is provided.   In the high-pressure jet cleaning section, the nozzle section that can be disposed along the length direction of the polishing head provided with the tape-shaped polishing material is such that the jet jet ejected from the nozzle section can clean a width region that is greater than the width of the substrate. The nozzle portion is composed of a plurality of nozzles or nozzles having a predetermined shape that allows a jet jet to be jetted to clean a region having a width equal to or greater than the width of the substrate, and the nozzle portions are arranged in parallel along the polishing head. The polishing apparatus according to claim 1, wherein the polishing apparatus is disposed in a state.   The polishing head is arranged so that the length direction of the tape-shaped polishing material provided in the polishing head is in a direction intersecting the substrate transport direction, and the pressure of the polishing material on the substrate surface can be freely set. The polishing apparatus according to claim 1, further comprising an adjustable mechanism.   The polishing apparatus according to claim 1, wherein the transport unit that transports the substrate is configured to transport the substrate in an inclined state with respect to the horizontal.   The polishing head or the polishing material of the polishing head reciprocates in the length direction, and the substrate advances while reciprocating or circularly oscillating in the conveyance direction, and the polishing material of the polishing head and the substrate The polishing apparatus according to any one of claims 1 to 9, characterized in that the movement is relatively different. 11. One or more said polishing head, said high-pressure jet washing | cleaning part, and a drying process part were put in the line which conveys the said board | substrate, and it was set as the integrated structure which can perform each process in series. A polishing apparatus according to claim 1.

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