JP2006324655A - Semiconductor element, organic transistor, light emitting device and electrical apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic transistor which requires low driving voltage and is simply manufactured, and by which light is emitted. <P>SOLUTION: In the organic transistor, a composite layer 104 comprising an organic compound having hole transporting characteristics and a metal oxide is used as a part of an electrode out of a source electrode and a drain electrode. The holes are poured into, and a composite layer 103 comprising an organic compound having electron transporting characteristics and an alkali metal or alkali earth metal is used as a part of an electrode out of the source electrode and the drain electrode for injecting electrons. Both the composite layers are in contact with an organic semiconductor layer 102. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor element (for example, an organic transistor) that can be used as a switching element or an amplifying element. Moreover, it is related with the light-emitting device using them.

  A laminate including an organic compound sandwiched between a pair of electrodes is injected by injecting electrons from one electrode and holes from the other electrode, and the electrons and holes are recombined in the laminate. Development of a light-emitting element capable of obtaining light emission by exciting a light-emitting material therein is underway.

  Since the light-emitting element is a self-luminous type, the viewing angle dependency is small, the visibility is excellent, and the thin and light weight can be easily reduced. In addition, an element can be manufactured on a flexible film such as plastic, and the use as a mobile display is also expected.

  The types of light-emitting devices using this light-emitting element are roughly divided into two types, passive matrix type and active matrix type. In an active matrix light-emitting device, a transistor is electrically connected to each pixel to control light emission of the light-emitting element.

  Until now, inorganic semiconductor materials typified by silicon have been widely used for transistors of active matrix light-emitting devices. However, in order to form an inorganic semiconductor material typified by silicon as a semiconductor layer, it is necessary to process at a high temperature, and thus it is difficult to use a flexible material such as a plastic or a film for the substrate.

  In contrast, a transistor using an organic semiconductor material as a semiconductor layer can be formed even at a relatively low temperature. Therefore, in principle, a transistor can be formed not only on a glass substrate but also on a substrate having low thermal durability such as plastic. Fabrication is possible.

Thus, as an example of a field effect transistor using an organic semiconductor material as a semiconductor layer (hereinafter referred to as “organic transistor”), silicon dioxide (SiO ₂ ) as a gate insulating layer and pentacene as a semiconductor layer (described below) Non-Patent Document 1). In this report, field effect mobility is reported to be 1 cm ² / Vs, and it is reported that transistor performance comparable to amorphous silicon can be obtained even when an organic semiconductor material is used as a semiconductor layer.

  An active matrix light-emitting device that drives a light-emitting element using this organic transistor has also been proposed. Further, an organic transistor that emits light from the organic semiconductor layer itself by injecting holes from the source electrode into the organic semiconductor layer of the organic transistor and injecting electrons from the drain electrode to recombine in the semiconductor layer (hereinafter referred to as an organic light emitting transistor). Some reports have been made (for example, see Non-Patent Document 2 and Non-Patent Document 3).

  Since these organic light emitting transistors are elements having both functions of a transistor and a light emitting element at the same time, it is more advantageous in terms of aperture ratio than separately manufacturing a transistor for driving a light emitting element and a light emitting element. Has been. In addition, since there are fewer elements to be manufactured than in the case of manufacturing both a transistor and a light-emitting element, it is considered advantageous in terms of product yield and manufacturing cost.

  By the way, in order to obtain light emission in an organic light emitting transistor, holes and electrons must be injected into the semiconductor layer from the source electrode and the drain electrode, respectively, but if there is an energy barrier at the interface, light emission does not occur well. Problems such as deterioration in transistor characteristics such as mobility and increase in driving voltage occur.

  The energy barrier for injecting holes and electrons into the semiconductor layer is determined by the relationship between the material used for the electrode and the organic semiconductor material, and greatly affects the work function of the material used for the electrode. Therefore, an electrode material that can efficiently inject holes and electrons into the semiconductor layer and can reduce the driving voltage has a very small selection range.

Furthermore, when forming a metal electrode, the work function may change or the lower layer may be deteriorated by etching when forming the electrode, and the drive voltage is small and can be easily manufactured. Obtaining an organic light emitting transistor is not easy.
Y. Y. Lin, D.D. J. et al. Gundlach, S.M. F. Nelson, T .; N. Jackson, IEEE Electron Device Letters, Vol. 18,606-608 (1997) M.M. Ahles, A .; Hepp, R.A. Schmechel, F.M. v. Seggern, APPLIED PHYSICS LETTERS, Vol. 84, no. 3,428-430 (2004) T. T. et al. Sakanoue, E .; Fujiwara, R .; Yamada, H .; Tada, Chemistry Letters, Vol. 34, no. 4,494-495 (2005)

  Therefore, an object of the present invention is to provide a semiconductor element with a low driving voltage. It is another object of the present invention to provide a semiconductor element that can obtain light emission, can control the light emission by itself, and can be easily manufactured.

  Another object of the present invention is to provide an organic transistor with a low driving voltage. It is another object of the present invention to provide an organic transistor that can obtain light emission, can be controlled by changing the voltage of the gate electrode, and can be easily manufactured.

  It is another object of the present invention to provide a light-emitting device with a high aperture ratio and a high yield. Another object of the present invention is to provide a light-emitting device that can be more easily manufactured. Another object of the present invention is to provide a light-emitting device with low driving voltage and low power consumption.

  As a result of intensive studies, the inventor has obtained a composite layer containing an organic compound having a hole transporting property and a metal oxide as a part of the electrode for injecting holes out of the source electrode and the drain electrode. And using a composite layer containing an organic compound having an electron transporting property and an alkali metal or alkaline earth metal as a part of an electrode for injecting electrons, and the composite layer is in contact with the organic semiconductor layer. It has been found that an organic light emitting transistor having the above can solve the above problems.

  The semiconductor element of the present invention includes a first electrode, a semiconductor layer containing an organic compound, an insulating film that electrically insulates the first electrode from the semiconductor layer, a second electrode that injects electrons into the semiconductor layer, A third electrode for injecting holes into the semiconductor layer, and the third electrode includes a layer made of a first composite material containing at least part of an organic compound having a hole transporting property and a metal oxide. And the second electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal, and a layer made of the first composite material The layer made of the second composite material is in contact with the semiconductor layer.

  The semiconductor element of the present invention is characterized in that, in the above structure, the second electrode is formed of two layers of a layer made of the first composite material and a conductive layer. In the case where the conductive layer does not contact the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the first composite material in the channel length direction. It may be covered with a layer made of a material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the first composite material.

  In the semiconductor device of the present invention having the above structure, the third electrode is formed of two layers of a layer made of the second composite material and a conductive layer. In the case where the conductive layer does not contact the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the layer made of the second composite material in the channel length direction. It may be covered with a layer made of a material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the second composite material.

  In the above structure of the semiconductor element of the present invention, the second electrode further includes a layer made of the second composite material, and the layer made of the first composite material and the layer made of the second composite material are at least It is characterized by partly touching. The second electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer.

  In the above structure of the semiconductor element of the present invention, the third electrode further includes a layer made of the first composite material, and the layer made of the first composite material and the layer made of the second composite material are at least It is characterized by partly touching. The third electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer.

  The organic transistor of the present invention includes a gate electrode, a semiconductor layer containing an organic compound, an insulating film that electrically insulates the gate electrode from the semiconductor layer, a source electrode, and a drain electrode, and the source electrode is at least one. A layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at a part thereof, and the drain electrode at least partially having an organic compound having an electron transporting property and an alkali metal or alkaline earth It has a layer made of a second composite material containing metal, and the layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer.

  The organic transistor of the present invention is characterized in that, in the above structure, the source electrode is formed of two layers of a layer made of the first composite material and a conductive layer. In the case where the conductive layer is not in contact with the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the first composite material in the channel length direction. It may be covered with a layer made of a composite material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the first composite material.

  The organic transistor of the present invention is characterized in that, in the above structure, the drain electrode is formed of two layers of a layer made of the second composite material and a conductive layer. In the case where the conductive layer does not contact the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the layer made of the second composite material in the channel length direction. It may be covered with a layer made of a material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the second composite material.

  In the organic transistor of the present invention, in the above structure, the source electrode further includes a layer made of the second composite material, and the layer made of the first composite material and the layer made of the second composite material are at least partially. It is characterized by touching. The source electrode is formed of three layers of a layer made of a first composite material, a layer made of a second composite material, and a conductive layer.

  In the organic transistor of the present invention, in the above structure, the drain electrode further includes a layer made of the first composite material, and the layer made of the first composite material and the layer made of the second composite material are at least partially. It is characterized by touching. In addition, the drain electrode is formed of three layers including a layer made of a first composite material, a layer made of a second composite material, and a conductive layer.

  The organic transistor of the present invention includes a gate electrode, a semiconductor layer containing an organic compound, an insulating film that electrically insulates the gate electrode from the semiconductor layer, a source electrode, and a drain electrode, and the source electrode is at least one. Having a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal in the part, and the drain electrode at least partially comprising an organic compound having a hole transporting property and metal oxidation And a layer made of the first composite material and a layer made of the second composite material are in contact with the semiconductor layer.

  The organic transistor of the present invention is characterized in that, in the above structure, the source electrode is formed of two layers of a layer made of the second composite material and a conductive layer. In the case where the conductive layer does not contact the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the layer made of the second composite material in the channel length direction. It may be covered with a layer made of a material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the second composite material.

  The organic transistor of the present invention is characterized in that, in the above structure, the drain electrode is formed of two layers of a layer made of the first composite material and a conductive layer. In the case where the conductive layer does not contact the semiconductor layer, the length of the conductive layer in the channel length direction may be shorter than the length of the first composite material in the channel length direction. It may be covered with a layer made of a material. When the conductive layer is in contact with the semiconductor layer, the conductive layer may be covered with a layer made of the first composite material.

  In the organic transistor of the present invention, in the above structure, the source electrode further includes a layer made of the first composite material, and the layer made of the first composite material and the layer made of the second composite material are at least partially. It is characterized by touching. The source electrode is formed of three layers of a layer made of a first composite material, a layer made of a second composite material, and a conductive layer.

  In the organic transistor of the present invention, in the above structure, the drain electrode further includes a layer made of the second composite material, and the layer made of the first composite material and the layer made of the second composite material are at least partially. It is characterized by touching. In addition, the drain electrode is formed of three layers including a layer made of a first composite material, a layer made of a second composite material, and a conductive layer.

  In the organic transistor of the present invention, the semiconductor layer emits light when voltage is applied between the source electrode and the drain electrode in the above structure. Further, the emission luminance is changed by changing the voltage applied to the gate electrode.

  The semiconductor element of the present invention is a semiconductor element having a low driving voltage. Further, the semiconductor element can obtain light emission, can control the light emission by itself, and can be easily manufactured.

  The organic transistor of the present invention is an organic transistor having a low driving voltage. In addition, the organic transistor can emit light, can be controlled by changing the voltage of the gate electrode, and can be easily manufactured.

  The light-emitting device of the present invention is a light-emitting device with a high aperture ratio and a high yield. The light-emitting device of the present invention is a light-emitting device that can be easily manufactured. The light-emitting device of the present invention is a light-emitting device with low driving voltage.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
A semiconductor element which is an embodiment of the present invention will be described with reference to the drawings shown in FIGS.

  The semiconductor element of the present invention shown in FIG. 1A includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown), and the insulating film 101 electrically insulates the semiconductor layer 102 and the first electrode 100. The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided in contact with the semiconductor layer 102. The conductive layer 105 a and the conductive layer 105 b are not necessarily in contact with the semiconductor layer 102.

  Although not shown, among the insulators that can form the first electrode 100, the substrate is an insulating substrate such as a glass substrate, a quartz substrate, or crystalline glass, a ceramic substrate, a stainless steel substrate, or a metal substrate ( Tantalum, tungsten, molybdenum, etc.), semiconductor substrates, plastic substrates (polyimide, acrylic, polyethylene terephthalate, polycarbonate, polyarylate, polyethersulfone, etc.) can be used. In addition, an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxide containing nitrogen and silicon nitride containing oxygen, an organic insulating material such as acrylic or polyimide, and a skeleton structure formed by bonding silicon and oxygen on these substrates. An insulating film is formed of an organic group (for example, an alkyl group or an aryl group) containing at least hydrogen as a substituent, a fluoro group, or a material having an organic group containing at least hydrogen and a fluoro group, a so-called siloxane-based material. Also good. These insulating films may be formed by a method such as a CVD method, a sputtering method, a vapor deposition method, or a wet method.

  The material of the first electrode 100, the conductive layer 105a, and the conductive layer 105b is not particularly limited, but platinum, gold, aluminum, chromium, nickel, cobalt, copper, titanium, magnesium, calcium, barium, sodium, Metals such as tungsten and alloys containing them, conductive polymer compounds such as polyaniline, polypyrrole, polythiophene, polyacetylene, polydiacetylene, inorganic semiconductors such as silicon, doped silicon, germanium, gallium arsenide, and acids (Lewis acid) And those doped with metal atoms such as halogen atoms, alkali metals and alkaline earth metals. In general, a metal is often used as a conductive material used for a source electrode and a drain electrode. These may be formed by a method such as a CVD method, a sputtering method, a vapor deposition method, or a wet method.

  The material of the insulating film 101 is not particularly limited, but inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxide containing nitrogen and silicon nitride containing oxygen, organic insulating materials such as acrylic and polyimide, silicon and An organic group (for example, an alkyl group or an aryl group) containing at least hydrogen as a substituent, a fluoro group, or a material having an organic group containing at least hydrogen and a fluoro group, a so-called siloxane-based material. An insulating film made of a material can be used.

The material of the semiconductor layer 102 can be any of a low molecule, a medium molecule, and a polymer, and the type thereof is not particularly limited, but a polycyclic aromatic compound, a conjugated double bond compound, a macro ring compound, Examples thereof include metal phthalocyanine complexes, charge transfer complexes, condensed ring tetracarboxylic acid diimides, oligothiophenes, fullerenes, and carbon nanotubes. For example, polypyrrole, polythiophene, poly (3-alkylthiophene), polythienylene vinylene, poly (p-phenylene vinylene), polyaniline, polydiacetylene, polyazulene, polypyrene, polycarbazole, polyselenophene, polyfuran, poly (p-phenylene) , Polyindole, polypyridazine, anthracene, tetracene, pentacene, hexacene, heptacene, pyrene, chrysene, perylene, coronene, terylene, ovalene, quaterylene, triphenodioxazine, triphenodithiazine, hexacene-6,15-quinone, polyvinylcarbazole, Polyphenylene sulfide, polyvinylene sulfide, polyvinyl pyridine, naphthalene tetracarboxylic acid diimide, anthracene tetracarboxylic acid diimide, C ₆₀ , _C70 , _C76 , _C78 , _C84 and derivatives thereof can be used. Specific examples thereof include pentacene, sexual thiophene (6T), copper phthalocyanine, bis- (1,2,5-thiadiazolo) -p-quinobis (1,3-dithiol), which are generally regarded as p-type semiconductors. ), Rubrene, generally 7,7,8,8, -tetracyanoquinodimethane (abbreviation: TCNQ), 3,4,9,10-perylenetetracarboxylic dianhydride (abbreviation) : PTCDA), 1,4,5,8, -naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA), N, N'-dioctyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: PTCDI-) C8H), copper hexadecafluorophthalocyanine _{(abbreviation: F 16 CuPc), 3 '} , 4'- dibutyl-5,5 "- bis (dicyanomethylene) -5,5" - dihydro - , 2 ′: 5 ′, 2 ″ -terthiophene) (abbreviation: DCMT), etc. Note that p-type and n-type characteristics of organic semiconductors are not unique to the substance, and are different from those of an electrode for injecting carriers. Depending on the relationship and the strength of the electric field at the time of implantation, there is a tendency to be either, but there is a possibility that it can be p-type, n-type, or bipolar. A part of the layer 103 made of a material and the layer 104 made of the first composite material in the third electrode 108 are provided in contact with the semiconductor layer 102, so that an injection barrier for both holes and electrons is reduced. Since holes and electrons can be easily injected without applying a strong electric field, both holes and electrons are injected even in materials generally called p-type or n-type. To be able to As described above, light emission can be obtained as a result of recombination.As described above, even if a material generally referred to as p-type or n-type is used as the material of the semiconductor layer 102 in the present invention, the driving voltage is increased. Note that the use of a highly bipolar material can further reduce the driving voltage, which is still a preferable structure.

In addition, as a compound that can be used as a material of the semiconductor layer 102 in the semiconductor element of the present invention, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4 , 4′-bis [N- (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation) : TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis {N- [4- (N, N-di-m-tolylamino) phenyl] -N-phenylamino} biphenyl (abbreviation: DNTPD), 1,3,5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTD B), 4,4 ', 4''- tris (N- carbazolyl) triphenylamine (abbreviation: TCTA), phthalocyanine _{(abbreviation:} H 2 Pc), vanadyl phthalocyanine (abbreviation: VOPc), tris (8-quinolinolato) Aluminum (abbreviation: Alq ₃ ), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. Can be used.

In addition, a material having a transport property with respect to holes and / or electrons as a host material (for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino as a hole transport material) ] Biphenyl (abbreviation: NPB), 4,4′-bis [N- (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N -Diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4 '-Bis {N- [4- (N, N-di-m-tolylamino) phenyl] -N-phenylamino} biphenyl (abbreviation: DNTPD), 1,3,5-tris [N, N-di (m -Tolyl) amino] benzene Abbreviation: m-MTDAB), 4,4 ' , 4''- tris (N- carbazolyl) triphenylamine (abbreviation: TCTA), phthalocyanine _{(abbreviation:} H 2 Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (Abbreviation: VOPc), tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxy) Benzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), bis [2- (2-hydroxyphenyl) pyridinato ] zinc (abbreviation: Znpp _2), bis [2- (2-hydroxyphenyl) benzo Kisazorato] zinc (abbreviation: Zn _(BOX) 2), bis [2- (2-hydroxyphenyl) benzothiazolato] zinc (abbreviation: Zn _{(BTZ) 2),} etc. of the metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazole 2-yl] benzene (abbreviation: OXD-7) and other oxadiazole derivatives, 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (Abbreviation: TAZ), 3- (4-biphenylyl) -4- (4-ethylphenyl) -5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: p-EtTAZ)) Triazol derivatives, bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2,2 ′, 2 ″-(1,3,5-benzenetriyl) -tris (1-phenyl-1H-benzimidazole) ) (Abbreviation: TPBI), 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs), as a bipolar material, poly (2,5-thienylene vinylene) (abbreviation) : PTV), poly (3-hexylthiophene-2,5-diyl) (abbreviation: P3HT), poly (9,9′-dioctyl-fluorene-co-bithiophene) (abbreviation: F8T2), 9,10-di ( Anthracene derivatives such as 2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4′-bis (N-carbazolyl) ) Biphenyl (abbreviation: CBP) or other carbazole derivative, etc.) as a guest material, a material that becomes a luminescence center (for example, 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 2-tert-butyl-9) , 10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T , Perylene, rubrene, periflanthene, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene, 4- ( Dicyanomethylene) -2-methyl-6- [p- (dimethylamino) styryl] -4H-pyran (abbreviation: DCM1), 4- (dicyanomethylene) -2-methyl-6- [2- (julolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCM2), 4- (dicyanomethylene) -2,6-bis [P- (Dimethylamino) styryl] -4H-pyran (abbreviation: BisDCM), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] (picolinato) iridium (abbreviation: FIrpic) Bis {2- [3 ′, 5′-bis (trifluoromethyl) phenyl] pyridinato-N, C ^{2 ′} } (picolinato) iridium (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), tris (2 -Phenylpyridinato-N, C2 ^' ) iridium (abbreviation: Ir (ppy) ₃ ), (acetylacetonato) bis (2-phenylpyridinato-N, C2 ^' ) iridium (abbreviation Name: Ir (ppy) ₂ (acac)), (acetylacetonato) bis [2- (2′-thienyl) pyridinato-N, C ^{3 ′} ] iridium (abbreviation: Ir (thp) ₂ (acac)), ( Acetylacetonato) bis (2-phenylquinolinato-N, C2 ^′ ) iridium (abbreviation: Ir (pq) ₂ (acac)), (acetylacetonato) bis [2- (2′-benzothienyl) pyridinato- It may be a host-guest mixed material in which N, C ^{3 ′} ] iridium (abbreviation: Ir (btp) ₂ (acac))) is dispersed. The concentration of the guest material in the host material is not limited, but is preferably about 5 wt% to 8 wt%.

  The semiconductor layer 102 made of these materials may be formed by any method such as a CVD method, a sputtering method, a vapor deposition method, or a wet method.

The second composite material forming the layer 103 made of the second composite material is a material in which an inorganic compound and an organic compound having an electron transporting property are combined. As an inorganic compound, an alkali metal and an alkaline earth metal, or an oxide or nitride containing them is preferable. Specifically, lithium, sodium, potassium, cesium, magnesium, calcium, strontium, barium, lithium oxide, magnesium Nitride and calcium nitride are preferable. Examples of the organic compound having an electron transporting property include perylenetetracarboxylic anhydride and derivatives thereof, perylenetetracarboxydiimide derivatives, naphthalenetetracarboxylic anhydride and derivatives thereof, naphthalenetetracarboxydiimide derivatives, metal phthalocyanine derivatives, and fullerenes. In addition, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq _2), bis (2-methyl-8-quinolinolato) -4-phenylphenolato - aluminum (abbreviation: BAlq), or the like can be used materials comprising a metal complex having a quinoline skeleton or a benzoquinoline skeleton In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) A material such as a metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The layer 103 made of the second composite material can be formed by a co-evaporation method of an alkali metal and an alkaline earth metal, or an oxide or nitride containing them and an organic compound having an electron transporting property. It may be formed by other methods.

The first composite material forming the layer 104 made of the first composite material is a material in which an inorganic compound and an organic compound having a hole transporting property are combined. As the inorganic compounds, oxides and nitrides of transition metals are desirable. Specifically, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, titanium oxide, manganese oxide Rhenium oxide is preferable, and 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4′- Bis [N- (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis N- [4- (N, N-di-m-tolylamino) phenyl] -N-phenylamino} biphenyl (abbreviation: DNTPD), 1,3,5-tris [N, N-di (m-tolyl) amino ] Organic materials having an arylamino group such as benzene (abbreviation: m-MTDAB), 4,4 ′, 4 ″ -tris (N-carbazolyl) triphenylamine (abbreviation: TCTA), and phthalocyanine (abbreviation: H _2). Pc), copper phthalocyanine (abbreviation: CuPc), vanadyl phthalocyanine (abbreviation: VOPc), and the like can also be used.

  In addition, an organic material represented by the following general formula (1) can also be suitably used. Specific examples thereof include 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino]. -9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), and the like. it can. The first composite material using an organic compound having this structure has excellent thermal stability and good reliability.

（式中、Ｒ^１およびＲ^３は、それぞれ同一でも異なっていてもよく、水素、炭素数１〜６のアルキル基、炭素数６〜２５のアリール基、炭素数５〜９のヘテロアリール基、アリールアルキル基、炭素数１〜７のアシル基のいずれかを表し、Ａｒ^１は、炭素数６〜２５のアリール基、炭素数５〜９のヘテロアリール基のいずれかを表し、Ｒ^２は、水素、炭素数１〜６のアルキル基、炭素数６〜１２のアリール基のいずれかを表し、Ｒ^４は、水素、炭素数１〜６のアルキル基、炭素数６〜１２のアリール基、一般式（２）で示される置換基のいずれかを表し、一般式（２）で示される置換基において、Ｒ^５は、水素、炭素数１〜６のアルキル基、炭素数６〜２５のアリール基、炭素数５〜９のヘテロアリール基、アリールアルキル基、炭素数１〜７のアシル基のいずれかを表し、Ａｒ^２は、炭素数６〜２５のアリール基、炭素数５〜９のヘテロアリール基のいずれかを表し、Ｒ^６は、水素、炭素数１〜６のアルキル基、炭素数６〜１２のアリール基のいずれかを表す。）

(In the formula, R ¹ and R ³ may be the same or different from each other; hydrogen, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 25 carbon atoms, a heteroaryl group having 5 to 9 carbon atoms, Ar ¹ represents any of an arylalkyl group and an acyl group having 1 to 7 carbon atoms, Ar ¹ represents any of an aryl group having 6 to 25 carbon atoms and a heteroaryl group having 5 to 9 carbon atoms, and R ² represents Represents any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms, and R ⁴ represents hydrogen, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms, Represents any of the substituents represented by formula (2), and in the substituent represented by formula (2), R ⁵ is hydrogen, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 25 carbon atoms. , C5-C9 heteroaryl group, arylalkyl group, carbon number Represents one of to 7 acyl group, Ar ² is an aryl group having 6 to 25 carbon atoms, represents any heteroaryl group having 5 to 9 carbon atoms, ^{R 6} is hydrogen, a carbon number 1 to 6 Or an alkyl group having 6 to 12 carbon atoms.)

  An organic material represented by any one of the following general formulas (3) to (6) can also be suitably used. Specific examples of the organic compound represented by any one of the following general formulas (3) to (6) include N- (2-naphthyl) carbazole (abbreviation: NCz), 4,4′-di (N-carbazolyl). Biphenyl (abbreviation: CBP), 9,10-bis [4- (N-carbazolyl) phenyl] anthracene (abbreviation: BCPA), 3,5-bis [4- (N-carbazolyl) phenyl] biphenyl (abbreviation: BCPBi) 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB) and the like.

（式中Ａｒは炭素数６〜４２の芳香族炭化水素基を表し、ｎは１〜３の自然数を表し、Ｒ^１、Ｒ^２は水素、または炭素数１〜４のアルキル基、または炭素数６〜１２のアリール基を表す。）

(In the formula, Ar represents an aromatic hydrocarbon group having 6 to 42 carbon atoms, n represents a natural number of 1 to 3, R ¹ and R ² are hydrogen, an alkyl group having 1 to 4 carbon atoms, or a carbon number. Represents 6-12 aryl groups.)

（式中Ａｒは炭素数６〜４２の１価の芳香族炭化水素基を表し、Ｒ^１、Ｒ^２は水素、または炭素数１〜４のアルキル基、または炭素数６〜１２のアリール基を表す。）

(In the formula, Ar represents a monovalent aromatic hydrocarbon group having 6 to 42 carbon atoms, R ¹ and R ² represent hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms. To express.)

（式中Ａｒは炭素数６〜４２の２価の芳香族炭化水素基を表し、Ｒ^１〜Ｒ^４は水素、または炭素数１〜４のアルキル基、または炭素数６〜１２のアリール基を表す。）

(In the formula, Ar represents a divalent aromatic hydrocarbon group having 6 to 42 carbon atoms, R ^{1 to} R ⁴ represent hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 12 carbon atoms. To express.)

（ただし、式中Ａｒは炭素数６〜４２の３価の芳香族炭化水素基を表し、Ｒ^１〜Ｒ^６は水素、または炭素数１〜４のアルキル基、または炭素数６〜１２のアリール基を表す。）

(In the formula, Ar represents a trivalent aromatic hydrocarbon group having ⁶ to 42 carbon atoms, R ^{1 to} R ⁶ are hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl having 6 to 12 carbon atoms. Represents a group.)

  Furthermore, aromatics such as anthracene, 9,10-diphenylanthracene (abbreviation: DPA), 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), tetracene, rubrene, pentacene, etc. Hydrocarbons can also be used.

  The layer 104 made of the first composite material can be formed by a co-evaporation method of the above-described inorganic compound and an organic compound having a hole transporting property, but may be formed by a wet method or any other method. . Note that in the layer 104 formed of the first composite material, the organic compound and the inorganic compound are desirably in a weight ratio of 95: 5 to 20:80, more preferably 90:10 to 50:50.

  Since the semiconductor element of the present invention having such a structure includes the layer 103 made of the second composite material in a portion in contact with the semiconductor layer 102 of the second electrode 107, the semiconductor layer 102 is formed from the second electrode 107. The energy barrier for injecting electrons into is small. In addition, since the layer 104 made of the first composite material is provided in a portion of the third electrode 108 that is in contact with the semiconductor layer 102, an energy barrier for injecting holes from the third electrode 108 into the semiconductor layer 102 is small. Accordingly, the semiconductor element of the present invention can be a semiconductor element with a low driving voltage. In the conventional structure in which the second electrode 107 and the third electrode 108 are made of other materials instead of the first composite material and the second composite material, the second electrode 107 and the third electrode 108 are formed. When selecting a conductive layer to be selected, there is a restriction due to work function, and considering other characteristics such as conductivity and stability, the selection range is very small. On the other hand, the second electrode 107 and the third electrode 108 in the semiconductor element of the present invention are provided so that the layer 103 made of the second composite material and the layer 104 made of the first composite material are in contact with the semiconductor layer 102, respectively. However, the conductive layer 105a and the conductive layer 105b only have to have a certain degree of conductivity, and any of the materials described above can be preferably used, and the range of selection can be greatly widened.

  Furthermore, both the layer 104 made of the first composite material and the layer 103 made of the second composite material can be formed by vapor deposition or a wet method, and the semiconductor element of the present invention can be easily manufactured. .

  Furthermore, in the semiconductor element of the present invention, the voltage on the third electrode side between the second electrode 107 and the third electrode 108 is higher than a certain voltage so as to be higher than the voltage on the second electrode side. Electrons are injected from the second electrode 107 into the semiconductor layer 102 by the electric field generated by applying, and holes are injected from the third electrode 108 into the semiconductor layer 102. By recombination in the semiconductor layer 102, molecules of the semiconductor layer 102 are excited, and light emission can be obtained from the semiconductor layer 102 when the excited molecules return to the ground state. At this time, by applying a voltage to the first electrode 100 and changing the voltage, electrons or holes can be changed without changing the current or voltage applied between the second electrode 107 and the third electrode 108. The injection amount can be changed, and light emission can be controlled.

  Further, since light emission can be controlled without separately providing a driving transistor and a light emitting element, the aperture ratio is improved, which is advantageous for high definition. In addition, since the number of manufacturing processes is small, the light-emitting device of the present invention having the function of controlling the semiconductor element, the organic transistor, or the organic light-emitting transistor of the present invention has a low defect occurrence rate and a good yield. can do.

  FIG. 1B shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 1B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown), and the insulating film 101 electrically insulates the semiconductor layer 102 and the first electrode 100. The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Peripheral portions of the conductive layer 105a and the conductive layer 105b are formed on the inner side that does not reach the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material, respectively. That is, unlike the semiconductor element in FIG. 1A, the semiconductor element in FIG. 1B includes a layer 103 made of the second composite material, a layer 104 made of the first composite material, a conductive layer 105a, and a conductive layer 105b. It is formed so as to be in contact with the semiconductor layer 102. Therefore, the layer 103 made of the second composite material and the layer 104 made of the first composite material are formed so as to cover the surfaces of the conductive layer 105a and the conductive layer 105b.

  Note that the other structures, materials, and effects of the semiconductor element of the present invention shown in FIG. 1B are the same as those in FIG. 1A, so that the description in FIG. Description is omitted.

  FIG. 1C shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 1C includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown), and the insulating film 101 electrically insulates the semiconductor layer 102 and the first electrode 100. The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided in contact with the semiconductor layer 102. The peripheral portions of the conductive layer 105 a and the conductive layer 105 b are formed on the inner side of the second composite material layer 103 and the first composite material layer 104 so as not to reach the peripheral portion, and are in contact with the semiconductor layer 102. Absent. That is, in the semiconductor element in FIG. 1C, the conductive layer 105a and the conductive layer 105b are not in contact with the semiconductor layer 102 as in FIG. Unlike FIG. 1A, the conductive layer 105a is formed so that the width (the length in the channel length direction 109) is shorter than the width of the layer 103 made of the second composite material (the length in the channel length direction 109). The conductive layer 105b is also formed so that the width (length in the channel length direction 109) is shorter than the width of the layer 104 made of the first composite material (length in the channel length direction 109).

  In the case of an element in which an electrode is arranged on the semiconductor layer 102 as shown in FIG. 1, the surface of the semiconductor layer 102 is damaged when the electrode is formed, and the performance as the semiconductor element is lowered. There is. However, in the structure shown in FIG. 1C, the peripheral portions of the conductive layer 105a and the conductive layer 105b are respectively located in the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material. The metal conductive layer can be formed without damaging the semiconductor layer 102 because it is formed on the inner side that is not reached and is not in contact with the semiconductor layer 102. Specifically, a conductive layer may be formed only on a layer made of a composite material using a mask.

  Other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 1C are the same as those in FIG. 1A, and thus are similar to those in FIG.

  FIG. 2A shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 2A includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 includes the semiconductor layer 102, the second electrode 107, and the third electrode 108 to the first electrode 100. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed in contact with the insulating film 101, and the semiconductor layer 102 is formed to cover the insulating film 101, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed inside the layers 103 made of the second composite material and the layers 104 made of the first composite material. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the insulating film 101, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103 made of the second composite material (channel length direction). The conductive layer 105b is also formed to have a width (length in the channel length direction) shorter than a width (length in the channel length direction) of the layer 104 made of the first composite material. It may be.

  In FIG. 2A, a layer 103 made of the second composite material and a layer 104 made of the first composite material are formed on the second electrode 107 and the third electrode 108 closer to the first electrode 100, respectively. The conductive layer 105a and the conductive layer 105b are formed away from the insulating film 101, but the conductive layer 105a and the conductive layer 105b are formed closer to the first electrode 100 as shown in FIG. Alternatively, the layer 103 made of the second composite material and the layer 104 made of the first composite material may be formed away from the insulating film 101. In the structure shown in FIG. 2C, since the semiconductor layer 102 and the layer 103 made of the second composite material and the layer 104 made of the first composite material and the semiconductor layer 102 are in contact with each other, holes are formed. And an advantageous configuration with respect to electron injection. The structure in FIG. 2C is the same as that in FIG. 2A except for the stacking order of the electrodes.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIGS. 2A and 2C are the same as those in FIG. 1A, the description in FIG. And repeated description will be omitted.

  FIG. 2B shows a semiconductor element of the present invention having a different structure. 2B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108. The semiconductor element shown in FIG.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 includes the semiconductor layer 102, the second electrode 107, and the third electrode 108 to the first electrode 100. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed in contact with the insulating film 101, and the semiconductor layer 102 is formed to cover the insulating film 101, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Peripheral portions of the conductive layer 105a and the conductive layer 105b are formed on the inner side that does not reach the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material, respectively. That is, the semiconductor element in FIG. 2B is different from FIGS. 2A and 2C in that the layer 103 made of the second composite material, the layer 104 made of the first composite material, the conductive layer 105a, and the conductive layer The layers 105b are formed so as to be in contact with the insulating film 101, respectively. Therefore, the layer 103 made of the second composite material and the layer 104 made of the first composite material are formed so as to cover the surfaces of the conductive layer 105a and the conductive layer 105b, and the conductive layer 105a and the conductive layer 105b are made of a semiconductor. The structure is not in contact with the layer 102.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 2B are the same as those in FIG. 1A, the description is repeated according to the description in FIG. Omitted.

  FIG. 3A shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 3A includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 includes the semiconductor layer 102, the second electrode 107, and the third electrode 108 to the first electrode 100. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed in contact with the insulating film 101, and the semiconductor layer 102 is formed to cover the insulating film 101, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are provided so as to be in contact with each other, and the first composite in the third electrode 108 is formed. The layer 104b made of a material and the layer 103b made of a second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the insulating film 101, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103a made of the second composite material (channel length direction). The conductive layer 105b is also formed so that the width (the length in the channel length direction) is shorter than the width (the length in the channel length direction) of the layer 104b made of the first composite material. It may be.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 3A, the second electrode 107 and the third electrode 108 each include both a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the injection property of electrons or holes can be improved and the driving voltage can be further lowered. Become.

  3A can be manufactured more easily because the second electrode 107 and the third electrode 108 can be manufactured only by repeating film formation three times with the same mask. The semiconductor element can be made. Note that the stacking order of the layer made of the first composite material and the layer made of the second composite material may be reversed.

  Since the other structures, materials, and effects of the semiconductor element of the present invention shown in FIG. 3A are the same as those in FIG. 1A, the description of FIG. Omitted.

  FIG. 3B shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 3B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 includes the semiconductor layer 102, the second electrode 107, and the third electrode 108 to the first electrode 100. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed in contact with the insulating film 101, and the semiconductor layer 102 is formed to cover the insulating film 101, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are provided so as to be in contact with each other, and the first composite in the third electrode 108 is formed. The layer 104b made of a material and the layer 103b made of a second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the insulating film 101, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103a made of the second composite material (channel length direction). The conductive layer 105b is also formed so that the width (the length in the channel length direction) is shorter than the width (the length in the channel length direction) of the layer 104b made of the first composite material. It may be.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 3B, the second electrode 107 and the third electrode 108 include both a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the electron or hole injection property is improved, and the driving voltage can be further lowered. Become. Note that in the semiconductor element of the present invention illustrated in FIG. 3B, the portion of the second electrode 107 on the side where electrons are injected is in contact with the semiconductor layer 102 of the layer 103 a made of the second composite material. In the third electrode 108 that is located on the third electrode 108 side from the layer 104a made of the composite material and injects holes, the portion of the layer 104b made of the first composite material that is in contact with the semiconductor layer 102 is the first electrode. 2 is located on the second electrode 107 side with respect to the layer 103b made of the composite material 2, and it is considered that the recombination probability and injection efficiency of electrons and holes are improved, which is a preferable structure.

  3B, the second layer 107 and the third layer 108 are formed by forming the first layer and shifting the same mask slightly to form the second layer and the third layer. Since the second electrode 107 and the third electrode 108 can be manufactured only by forming the film, a semiconductor element that can be manufactured very simply can be obtained. Note that the order of stacking the layer made of the first composite material and the layer made of the second composite material may be reversed, but in the second electrode 107 on the side where electrons are injected, the second composite material is used. The portion of the layer 103a in contact with the semiconductor layer 102 is located closer to the third electrode 108 than the layer 104a made of the first composite material. In the third electrode 108 on the side where holes are injected, the first electrode The shape of the second electrode 107 and the third electrode 108 are such that the portion of the layer 104b made of the composite material that is in contact with the semiconductor layer 102 is located closer to the second electrode 107 than the layer 103b made of the second composite material. Reverse the shape.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 3B are the same as those in FIG. 1A, the description is repeated in accordance with the description in FIG. Omitted.

  FIG. 3C shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 3C includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The first electrode 100 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 includes the semiconductor layer 102, the second electrode 107, and the third electrode 108 to the first electrode 100. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed in contact with the insulating film 101, and the semiconductor layer 102 is formed to cover the insulating film 101, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Further, the first composite material in the third electrode 108 is provided so that at least part of the layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are in contact with each other. The layer 104b made of the material and the layer 103b made of the second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the insulating film 101, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103a made of the second composite material (channel length direction). The conductive layer 105b is also formed so that the width (the length in the channel length direction) is shorter than the width (the length in the channel length direction) of the layer 104b made of the first composite material. It may be.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 3C, the second electrode 107 and the third electrode 108 include both a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the injection property of electrons or holes can be improved and the driving voltage can be further lowered. Become. Note that in the semiconductor element of the present invention shown in FIG. 3B, the portion of the second electrode 107 on the side where electrons are injected is in contact with the semiconductor layer 102 of the layer 103a made of the second composite material. In the third electrode 108 that is located on the third electrode 108 side from the layer 104a made of the composite material and injects holes, the portion of the layer 104b made of the first composite material that is in contact with the semiconductor layer 102 is the first electrode. Therefore, it is considered that the recombination probability and injection efficiency of electrons and holes are improved, and this is a preferable structure. Note that the order of stacking the layer made of the first composite material and the layer made of the second composite material may be reversed, but in the second electrode 107 on the side where electrons are injected, the second composite material is used. The portion of the layer 103a in contact with the semiconductor layer 102 is located closer to the third electrode 108 than the layer 104a made of the first composite material. In the third electrode 108 on the side where holes are injected, the first electrode The shape of the second electrode 107 and the third electrode 108 are such that the portion of the layer 104b made of the composite material that is in contact with the semiconductor layer 102 is located closer to the second electrode 107 than the layer 103b made of the second composite material. Reverse the shape.

  FIG. 3D is an application example of FIG. 3C, and has the shape of FIG. 3C in the case of a structure having comb-shaped electrodes as shown in FIG. FIG. 3D corresponds to a cross-sectional view taken along line α-β in FIG. In this configuration, the third electrode 108 exists on both sides of the second electrode 107, and light emission can be obtained from the semiconductor layer 102 on either side. Further, if the first electrode 100 is separated, light emission can be controlled separately. Of course, the first electrode 100 may be the same. Although not shown, the third electrode 108 is provided on both sides of the second electrode 107, and such a structure is repeatedly provided.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 3C are the same as those in FIG. 1A, the description of FIG. Omitted.

  FIG. 5A shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 5A includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The semiconductor layer 102 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 electrically connects the first electrode 100 to the semiconductor layer 102, the second electrode 107, and the third electrode 108. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed over the semiconductor layer 102, and the insulating film 101 is formed to cover the semiconductor layer 102, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed inside the layers 103 made of the second composite material and the layers 104 made of the first composite material. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the semiconductor layer 102, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103 made of the second composite material (channel length direction). The conductive layer 105b is also formed to have a width (length in the channel length direction) shorter than a width (length in the channel length direction) of the layer 104 made of the first composite material. It may be.

  Since the other structures, materials, and effects of the semiconductor element of the present invention shown in FIG. 5A are the same as those in FIG. 1A, the description of FIG. Omitted.

  FIG. 5B shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 5B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The semiconductor layer 102 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 electrically connects the first electrode 100 to the semiconductor layer 102, the second electrode 107, and the third electrode 108. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed over the semiconductor layer 102, and the insulating film 101 is formed to cover the semiconductor layer 102, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Peripheral portions of the conductive layer 105a and the conductive layer 105b are formed on the inner side that does not reach the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material, respectively. That is, unlike the semiconductor element in FIG. 5A, the semiconductor element in FIG. 5B includes the layer 103 made of the second composite material, the layer 104 made of the first composite material, the conductive layer 105a, and the conductive layer 105b. It is formed so as to be in contact with the semiconductor layer 102. Therefore, the layer 103 made of the second composite material and the layer 104 made of the first composite material are formed so as to cover the surfaces of the conductive layer 105a and the conductive layer 105b, and the conductive layer 105a and the conductive layer 105b are insulated. The film 101 is not in contact with the film 101.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 5B are the same as those in FIG. 1A, the description of FIG. Omitted.

  FIG. 5C shows a semiconductor element of the present invention having a different structure. 5C includes the first electrode 100, the insulating film 101, the semiconductor layer 102, the second electrode 107, and the third electrode 108.

  The semiconductor layer 102 is formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The insulating film 101 electrically connects the first electrode 100 to the semiconductor layer 102, the second electrode 107, and the third electrode 108. Is electrically insulated. The second electrode 107 and the third electrode 108 are formed over the semiconductor layer 102, and the insulating film 101 is formed to cover the semiconductor layer 102, the second electrode 107, and the third electrode 108.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The peripheral portions of the conductive layer 105 a and the conductive layer 105 b are formed on the inner side of the second composite material layer 103 and the first composite material layer 104 so as not to reach the peripheral portion, and are in contact with the semiconductor layer 102. Absent. That is, the conductive layer 105a and the conductive layer 105b are not in contact with the semiconductor layer 102, and the conductive layer 105a has a width (length in the channel length direction) that is the width of the layer 103 made of the second composite material (channel length direction). The conductive layer 105b is also formed to have a width (length in the channel length direction) shorter than a width (length in the channel length direction) of the layer 104 made of the first composite material. ing.

  In the case of an element in which an electrode is disposed on the semiconductor layer 102 as shown in FIG. 5, the surface of the semiconductor layer 102 is damaged by sputtering when forming the electrode, and the performance as a semiconductor element is degraded. There is a case. However, in the structure as shown in FIG. 5C, the peripheral portions of the conductive layer 105a and the conductive layer 105b are respectively in the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material. The metal conductive layer can be formed without damaging the semiconductor layer 102 because it is formed on the inner side that is not reached and is not in contact with the semiconductor layer 102. Specifically, a conductive layer may be formed only on a layer made of a composite material using a mask.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 5C are the same as those in FIG. 1A, the description of FIG. Omitted.

  FIG. 6B shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 6B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The second electrode 107 and the third electrode 108 are formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The semiconductor layer 102 is formed to cover the second electrode 107 and the third electrode 108, and the insulating film 101 electrically insulates the first electrode 100 from the semiconductor layer 102.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed inside the layers 103 made of the second composite material and the layers 104 made of the first composite material. That is, the conductive layer 105a is formed so that the width (length in the channel length direction) is shorter than the width (length in the channel length direction) of the layer 103 made of the second composite material, and the conductive layer 105b also has a width (length). The length in the channel length direction) may be shorter than the width (the length in the channel length direction) of the layer 104 made of the first composite material.

  In FIG. 6B, a second composite material layer 103 and a first composite material layer 104 are formed on the second electrode 107 and the third electrode 108 closer to the first electrode 100, respectively. The conductive layer 105a and the conductive layer 105b are formed away from the insulating film 101, but the conductive layer 105a and the conductive layer 105b are formed closer to the first electrode 100 as shown in FIG. Alternatively, the layer 103 made of the second composite material and the layer 104 made of the first composite material may be formed away from the insulating film 101. In the structure shown in FIG. 6B, the semiconductor layer 102 and the layer 103 made of the second composite material and the area where the layer 104 made of the first composite material and the semiconductor layer 102 are in contact with each other are wide. And an advantageous configuration with respect to electron injection. The structure in FIG. 6B is the same as that in FIG. 6A except for the stacking order of the electrodes.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIGS. 6A and 6B are the same as those in FIG. 1A, the description in FIG. And repeated description will be omitted.

  FIG. 6C shows a semiconductor element of the present invention having a different structure. 6C includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode.

  The second electrode 107 and the third electrode 108 are formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The semiconductor layer 102 is formed to cover the second electrode 107 and the third electrode 108, and the insulating film 101 electrically insulates the first electrode 100 from the semiconductor layer 102.

  The second electrode 107 includes two layers of a conductive layer 105a and a second composite material layer 103, and the third electrode 108 includes two layers of a conductive layer 105b and a first composite material 104. Is formed. The layer 103 made of the second composite material in the second electrode 107 and the layer 104 made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Peripheral portions of the conductive layer 105a and the conductive layer 105b are formed on the inner side that does not reach the peripheral portion of the layer 103 made of the second composite material and the layer 104 made of the first composite material, respectively. That is, in the semiconductor element in FIG. 6C, the layer 103 made of the second composite material and the layer 104 made of the first composite material are formed so as to cover the surfaces of the conductive layer 105a and the conductive layer 105b. The conductive layer 105 a and the conductive layer 105 b are not in contact with the semiconductor layer 102.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 6C are the same as those in FIG. 1A, the description is repeated in accordance with the description in FIG. Omitted.

  FIG. 7A shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 7A includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The second electrode 107 and the third electrode 108 are formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The semiconductor layer 102 is formed to cover the second electrode 107 and the third electrode 108, and the insulating film 101 electrically insulates the first electrode 100 from the semiconductor layer 102.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . The layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are provided so as to be in contact with each other, and the first composite in the third electrode 108 is formed. The layer 104b made of a material and the layer 103b made of a second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a has a width (length in the channel length direction) larger than the width (length in the channel length direction) of the layer 103a made of the second composite material and the layer 104a made of the first composite material. The conductive layer 105b is formed short, and the width (the length of the channel length h in the horizontal direction) is also the width of the layer 103b made of the second composite material and the layer 104b made of the first composite material (length in the channel length direction). It may be formed shorter.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 7A, the second electrode 107 and the third electrode 108 each include both a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the injection property of electrons or holes can be improved and the driving voltage can be further lowered. Become.

  7A can be manufactured more easily because the second electrode 107 and the third electrode 108 can be manufactured only by repeating film formation three times with the same mask. The semiconductor element can be made. Note that the stacking order of the layer made of the first composite material and the layer made of the second composite material may be reversed.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 7A are the same as those in FIG. 1A, the description is repeated according to the description in FIG. Omitted.

  FIG. 7B shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 7B includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The second electrode 107 and the third electrode 108 are formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The semiconductor layer 102 is formed to cover the second electrode 107 and the third electrode 108, and the insulating film 101 electrically insulates the first electrode 100 from the semiconductor layer 102.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Further, the first composite material in the third electrode 108 is provided so that at least part of the layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are in contact with each other. The layer 104b made of the material and the layer 103b made of the second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a is formed so that the width (the length in the channel length direction) is shorter than the width (the length in the channel length direction) of the layer 103a made of the second composite material. (Length in the channel length direction) may be shorter than the width (length in the channel length direction) of the layer 103b made of the second composite material.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 7B, the second electrode 107 and the third electrode 108 are both formed of a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the injection property of electrons or holes can be improved and the driving voltage can be further lowered. Become. Note that in the semiconductor element of the present invention illustrated in FIG. 7B, the portion of the second electrode 107 on the side where electrons are injected is in contact with the semiconductor layer 102 of the layer 103 a made of the second composite material. In the third electrode 108 that is located on the third electrode 108 side from the layer 104a made of the composite material and injects holes, the portion of the layer 104b made of the first composite material that is in contact with the semiconductor layer 102 is the first electrode. Therefore, it is considered that the recombination probability and injection efficiency of electrons and holes are improved, and this is a preferable structure.

  In addition, in the structure shown in FIG. 7B, the second layer 107 and the third layer 108 of the second electrode 107 and the third electrode 108 are formed with the same mask slightly shifted after the first layer is formed. Since the second electrode 107 and the third electrode 108 can be manufactured only by performing the film formation, the semiconductor element can be manufactured very simply. Note that the order of stacking the layer made of the first composite material and the layer made of the second composite material may be reversed, but in the second electrode 107 on the side where electrons are injected, the second composite material is used. The portion of the layer 103a in contact with the semiconductor layer 102 is located closer to the third electrode 108 than the layer 104a made of the first composite material. In the third electrode 108 on the side where holes are injected, the first electrode The shape of the second electrode 107 and the third electrode 108 are such that the portion of the layer 104b made of the composite material that is in contact with the semiconductor layer 102 is located closer to the second electrode 107 than the layer 103b made of the second composite material. Also reverse the shape.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 7B are the same as those in FIG. 1A, the description is repeated in accordance with the description in FIG. Omitted.

  FIG. 7C shows a semiconductor element of the present invention having a different structure. The semiconductor element of the present invention shown in FIG. 7C includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  The second electrode 107 and the third electrode 108 are formed on an arbitrary insulator such as an insulating substrate or an insulating film (not shown). The semiconductor layer 102 is formed to cover the second electrode 107 and the third electrode 108, and the insulating film 101 electrically insulates the first electrode 100 from the semiconductor layer 102.

  The second electrode 107 includes a conductive layer 105a and a second composite material layer 103a and a first composite material layer 104a, and the third electrode 108 includes a conductive layer 105b and a second composite material. The layer 103b is made of three layers, and the layer 104b is made of a first composite material. The layer 103 a made of the second composite material in the second electrode 107 and the layer 104 b made of the first composite material in the third electrode 108 are provided so as to be at least partially in contact with the semiconductor layer 102. . Further, the first composite material in the third electrode 108 is provided so that at least part of the layer 104a made of the first composite material in the second electrode 107 and the layer 103a made of the second composite material are in contact with each other. The layer 104b made of the material and the layer 103b made of the second composite material are provided so that at least a part thereof is in contact therewith. The peripheral portions of the conductive layer 105a and the conductive layer 105b may be formed on the inner side that does not reach the peripheral portion of the layer made of the composite material. That is, the conductive layer 105a is formed so that the width (the length in the channel length direction) is shorter than the width (the length in the channel length direction) of the layer 103a made of the second composite material. The (transverse length of the channel length h) may be formed shorter than the width (the length in the channel length direction) of the layer 103b made of the second composite material.

  Note that the layers 103a and 103b made of the second composite material can be formed using the material of the layer 103 made of the second composite material in the description of FIG. 1A, and the layers 104a made of the first composite material 104a, 104b can be formed of the material of the layer 104 made of the first composite material in the description of FIG.

In the semiconductor element of the present invention illustrated in FIG. 7C, the second electrode 107 and the third electrode 108 each include both a layer made of the second composite material and a layer made of the first composite material. Furthermore, since the layer made of the second composite material and the layer made of the first composite material are in contact with each other, the injection property of electrons or holes can be improved and the driving voltage can be further lowered. Become. Note that in the semiconductor element of the present invention illustrated in FIG. 7B, the portion of the second electrode 107 on the side where electrons are injected is in contact with the semiconductor layer 102 of the layer 103 a made of the second composite material. In the third electrode 108 that is located on the third electrode 108 side from the layer 104a made of the composite material and injects holes, the portion of the layer 104b made of the first composite material that is in contact with the semiconductor layer 102 is the first electrode. 2 is located on the second electrode 107 side with respect to the layer 103b made of the composite material 2, and it is considered that the recombination probability and injection efficiency of electrons and holes are improved, which is a preferable structure. Note that the order of stacking the layer made of the first composite material and the layer made of the second composite material may be reversed, but in the second electrode 107 on the side where electrons are injected, the second composite material is used. The portion of the layer 103a in contact with the semiconductor layer 102 is located closer to the third electrode 108 than the layer 104a made of the first composite material. In the third electrode 108 on the side where holes are injected, the first electrode The shape of the second electrode 107 and the third electrode 108 are such that the portion of the layer 104b made of the composite material that is in contact with the semiconductor layer 102 is located closer to the second electrode 107 than the layer 103b made of the second composite material. Reverse the shape.

  FIG. 7 (D) is an application example of FIG. 7 (C), and the shape of FIG. 7 (C) is shown in the case where the structure has a comb-shaped electrode as shown in FIG. FIG. 7D corresponds to a cross-sectional view taken along line α-β in FIG. In this configuration, the third electrode 108 exists on both sides of the second electrode 107, and light emission can be obtained from the semiconductor layer 102 on either side. Further, if the first electrode 100 is separated, light emission can be controlled separately. Of course, the first electrode 100 may be the same. Although not shown, the third electrode 108 is provided on both sides of the second electrode 107, and such a structure is repeatedly provided.

  Since the other structures, materials, and effects of the semiconductor element of the present invention described in FIG. 7C are the same as those in FIG. 1A, the description of FIG. Omitted.

  8A to 8D show semiconductor elements of the present invention having different structures. 8A to 8D includes a first electrode 100, an insulating film 101, a semiconductor layer 102, a second electrode 107, and a third electrode 108.

  In the configuration of FIG. 8, FIG. 8A is FIG. 1A, FIG. 8B is FIG. 2A, FIG. 8C is FIG. 5A, and FIG. Although the configuration is substantially the same as that of (A), the second electrode 107 has a three-layer structure including a layer 103 made of the second composite material, a layer 104a made of the first composite material, and a conductive layer 105a. The difference is that the layer 103 made of the second composite material and the layer 104a made of the first composite material are in contact with each other.

  In the second electrode 107, the second electrode 107 includes a layered structure of the layer 103 made of the second composite material and the layer 104a made of the first composite material, whereby the layer 103 made of the second composite material. Thus, electrons can be easily injected by the semiconductor layer 102, and a semiconductor element with a lower driving voltage can be obtained.

  8 shows only the drawings corresponding to FIGS. 1 (A), 2 (A), 5 (A), and 6 (A). Of course, the configuration of FIG. 8 is shown in FIGS. 5 and FIG. 6 can be applied as appropriate to the semiconductor element of the present invention.

  Since the other structures, materials and effects of the semiconductor element of the present invention described in FIGS. 8A to 8D are the same as those in FIG. 1A, the description in FIG. The repeated explanation is omitted.

  1 to 8 is an organic transistor in which the first electrode 100 is a gate electrode, one of the second electrode 107 and the third electrode 108 is a source electrode, and the other is a drain electrode. Further, since light emission can be obtained from the semiconductor layer 102, it can also be referred to as an organic light-emitting transistor.

  The organic transistor or the organic light emitting transistor is divided into a p-type transistor and an n-type transistor depending on which of the semiconductor layer 102 is an electron or a hole, which is a main carrier. Therefore, in the case of the p-type organic transistor or organic light-emitting transistor of the present invention, of the second electrode 107 and the third electrode 108 when driving them, the electrode to which a higher voltage is applied is the source electrode and the lower electrode The electrode to which the voltage is applied is called the drain electrode. In the case of the n-type organic transistor or organic light-emitting transistor of the present invention, the lower voltage of the second electrode 107 and the third electrode 108 when driving them. The electrode to which the voltage is applied is called the source electrode, and the electrode to which the higher voltage is applied is called the drain electrode.

  In the p-type organic transistor or organic light-emitting transistor of the present invention, the source electrode includes at least a layer made of the first composite material, and the layer made of the first composite material in the source electrode is in contact with the semiconductor layer 102; The drain electrode includes at least a layer made of the second composite material, and the layer made of the second composite material in the drain electrode is in contact with the semiconductor layer 102. In the n-type organic transistor or organic light-emitting transistor of the present invention, the source electrode includes at least a layer made of the second composite material, and the layer made of the second composite material in the source electrode is in contact with the semiconductor layer 102. The drain electrode includes at least a layer made of the first composite material, and the layer made of the first composite material in the drain electrode is in contact with the semiconductor layer 102.

(Embodiment 2)
In this embodiment, a semiconductor element of the present invention having a structure different from those in FIGS. 1 to 8 will be described with reference to FIGS.

  9A to 9C, a semiconductor element of the present invention includes a first electrode 100, an insulating film 101, a layer 106e having an electron transporting property, a second electrode 107, a third electrode 108, and a semiconductor layer. In the basic configuration, FIG. 9A corresponds to FIG. 2A, FIG. 9B corresponds to FIG. 3B, and FIG. 9C corresponds to FIG. . A different part in the corresponding structure is that an electron transporting layer 106 e is formed between the insulating film 101 and the second electrode 107, the third electrode 108, and the semiconductor layer 102.

  9A to 9C, the second electrode 107 is formed so that the layer 103 or 103a made of the second composite material is in contact with at least the layer 106e having an electron transporting property. The electrode 108 is formed so that the layer 104 or 104 b made of the first composite material is in contact with at least the semiconductor layer 102.

  In the semiconductor element of the present invention having such a structure, when a voltage higher than a certain level is applied between the second electrode 107 and the third electrode 108 so that the voltage of the third electrode 108 is higher, Electrons are injected from the second electrode 107 to the electron transporting layer 106 e and holes are injected from the third electrode 108 to the semiconductor layer 102. With such a structure, even when the electron transport property of the semiconductor layer 102 is small, electrons are injected into the layer 106e having the electron transport property. The driving voltage can be reduced. As a result of recombination of the injected electrons and holes, the molecules of the semiconductor layer 102 are excited as a result, and light emission can be obtained when the excited molecules return to the ground state.

As a material for the layer 106e having an electron-transporting property, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), bis [2- (2-hydroxyphenyl) pyridinato] zinc (Abbreviation: Znpp ₂ ), bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn _{(BTZ) 2),} etc. of the metal complexes, 2- (4-biphenylyl) -5- (4-tert- butyl Enyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene Oxadiazole derivatives such as (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), Triazol derivatives such as 3- (4-biphenylyl) -4- (4-ethylphenyl) -5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: p-EtTAZ)), bathophenanthroline (Abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2,2 ′, 2 ″-(1,3,5-benzenetriyl) -tris (1-phenyl-1H-benzimidazole) ( Referred: TPBI), 4,4-bis (5-methylbenzoxazole-2-yl) stilbene (abbreviation: BzOs), etc., using an electron transporting material having relatively high. In the structure of FIG. 9, the materials described in Embodiment Mode 1 can be used as the material of the semiconductor layer 102. In particular, the structure of FIG. 9 is a material or host generally referred to as a p-type semiconductor. This structure is effective when a hole transporting material is used as the material. Note that in order to facilitate recombination of holes and electrons, it is desirable to select a combination that makes the energy barrier between the layer 106e having an electron transporting property and the semiconductor layer 102 as small as possible.

  Since the other structures and the effects thereof are the same as FIG. 2A, FIG. 9B is the same as FIG. 3B, and FIG. 9C is the same as FIG. 8B. The repeated explanation is omitted. See the description of each corresponding figure. Note that only FIG. 2A has been described with reference to FIG. 2 and only FIG. 3B has been illustrated with reference to FIG. 3, but FIG. 2B, FIG. 3C, and FIG. Also, the configuration of FIG. 9 can be applied.

  10A to 10C includes a first electrode 100, an insulating film 101, a layer 106h having a hole transporting property, a second electrode 107, a third electrode 108, and a semiconductor. The basic structure corresponds to FIG. 2 (A), FIG. 10 (B) corresponds to FIG. 3 (B), and FIG. 10 (C) corresponds to FIG. 8 (B). To do. A different part in each corresponding structure is that a layer 106 h having a hole transporting property is formed between the insulating film 101 and the second electrode 107, the third electrode 108, and the semiconductor layer 102.

  10A to 10C, the second electrode 107 is formed so that the layer 103 or 103a made of the second composite material is in contact with at least the semiconductor layer 102, and the third electrode 108 The layer 104 or 104b made of the first composite material is formed so as to be in contact with at least the layer 106h having a hole transporting property.

  In the semiconductor element of the present invention having such a structure, when a voltage of a certain level or higher is applied between the second electrode 107 and the third electrode 108 so that the voltage of the third electrode 108 is higher. Electrons are injected from the second electrode 107 to the semiconductor layer 102, and holes are injected from the third electrode 108 to the layer 106h having a hole-transport property. With such a structure, light emission can be obtained without applying a large electric field even when the hole transport property of the semiconductor layer 102 is small. In addition, since the injection and transport properties of holes and electrons can be improved, the drive voltage can be lowered. As a result of recombination of the injected electrons and holes, the molecules of the semiconductor layer 102 are excited as a result, and light emission can be obtained when the excited molecules return to the ground state.

As a material for the layer 106h having a hole-transport property, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4′-bis [N- (3 -Methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 '' -Tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis {N- [4- (N, N-di-m-tolylamino) ) Phenyl] -N-phenylamino} biphenyl (abbreviation: DNTPD), 1,3,5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), 4,4 ′, 4 ″ -Tris (N-carbazolyl) Phenylamine (abbreviation: TCTA), phthalocyanine _{(abbreviation:} H 2 Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and the use of HitoshiTadashiana transporting material having relatively high. In the structure of FIG. 10, the materials described in Embodiment Mode 1 can be used as the material of the semiconductor layer 102. In particular, the structure of FIG. 10 is a material or host generally referred to as an n-type semiconductor. This is an effective configuration when an electron transporting material is used as the material. Note that in order to facilitate recombination of holes and electrons, it is preferable to select a combination in which the energy barrier between the hole transporting layer 106h and the semiconductor layer 102 is as small as possible.

  Regarding other structures and effects thereof, FIG. 10A is the same as FIG. 2A, FIG. 10B is the same as FIG. 3B, and FIG. 10C is the same as FIG. The repeated explanation is omitted. See the description of each corresponding figure. Note that only FIG. 2A has been described with reference to FIG. 2 and only FIG. 3B has been illustrated with reference to FIG. 3, but FIG. 2B, FIG. 3C, and FIG. Also, the configuration of FIG. 10 can be applied.

  11A to 11C, the semiconductor element of the present invention includes a first electrode 100, an insulating film 101, a layer 106e having an electron transporting property, a second electrode 107, a third electrode 108, and a semiconductor layer. 11A corresponds to FIG. 6A, FIG. 11B corresponds to FIG. 7B, and FIG. 11C corresponds to FIG. 8D. . A different portion in each corresponding structure is that a layer 106e having an electron transporting property is formed in contact with the second electrode 107, the third electrode 108, and the semiconductor layer 102.

  11A to 11C, the second electrode 107 is formed so that the layer 103 or 103a made of the second composite material is in contact with at least the layer 106e having an electron transporting property. The electrode 108 is formed so that the layer 104 or 104 b made of the first composite material is in contact with at least the semiconductor layer 102.

  In the semiconductor element of the present invention having such a structure, when a voltage of a certain level or higher is applied between the second electrode 107 and the third electrode 108 so that the voltage of the third electrode 108 is higher. Electrons are injected from the second electrode 107 to the electron transporting layer 106 e and holes are injected from the third electrode 108 to the semiconductor layer 102. With such a configuration, the hole and electron injecting property and transporting property can be improved, so that the driving voltage can be lowered. In addition, the injected electrons and holes are recombined to excite molecules of the semiconductor layer 102 as a result, and light emission can be obtained when the excited molecules return to the ground state. With such a structure, light emission can be obtained without applying a large electric field even when the semiconductor layer 102 has low electron transport properties.

As a material for the layer 106e having an electron-transporting property, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), bis [2- (2-hydroxyphenyl) pyridinato] zinc (Abbreviation: Znpp ₂ ), bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn _{(BTZ) 2),} etc. of the metal complexes, 2- (4-biphenylyl) -5- (4-tert- butyl Enyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene Oxadiazole derivatives such as (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), Triazol derivatives such as 3- (4-biphenylyl) -4- (4-ethylphenyl) -5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: p-EtTAZ)), bathophenanthroline (Abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2,2 ′, 2 ″-(1,3,5-benzenetriyl) -tris (1-phenyl-1H-benzimidazole) ( Referred: TPBI), 4,4-bis (5-methylbenzoxazole-2-yl) stilbene (abbreviation: BzOs), or the like is used an electron transporting material having relatively high. In the structure of FIG. 11, the material described in Embodiment Mode 1 can be used as the material of the semiconductor layer 102. In particular, the structure of FIG. 11 is a material or host generally referred to as a p-type semiconductor. This is an effective configuration when a hole transporting material is used. Note that in order to facilitate recombination of holes and electrons, it is preferable to select a combination in which the energy barrier between the layer 106e having electron transport generation and the semiconductor layer 102 is as small as possible.

  Other configurations and effects thereof are the same as FIG. 6A for FIG. 11A, FIG. 7B for FIG. 11B, and FIG. 8D for FIG. The repeated explanation is omitted. See the description of each corresponding figure. Note that FIG. 6 has been described only with reference to FIG. 6A and FIG. 7 only with reference to FIG. 7B, but FIG. 6B, FIG. 7C, and FIG. Also, the configuration of FIG. 11 can be applied.

  A semiconductor element of the present invention shown in FIGS. 12A to 12C includes a first electrode 100, an insulating film 101, a layer 106h having a hole transporting property, a second electrode 107, a third electrode 108, and a semiconductor. 12A, FIG. 12A corresponds to FIG. 6A, FIG. 12B corresponds to FIG. 7B, and FIG. 12C corresponds to FIG. 8D. To do. A different part in the corresponding structure is that a layer 106 h having a hole transporting property is formed in contact with the second electrode 107, the third electrode 108, and the semiconductor layer 102.

  12A to 12C, the second electrode 107 is formed such that the layer 103 or 103a made of the second composite material is in contact with at least the semiconductor layer 102, and the third electrode 108 The layer 104 or 104b made of the first composite material is formed so as to be in contact with at least the layer 106h having a hole transporting property.

  In the semiconductor element of the present invention having such a structure, when a voltage of a certain level or higher is applied between the second electrode 107 and the third electrode 108 so that the voltage of the third electrode 108 is higher. Electrons are injected from the second electrode 107 into the semiconductor layer 102, and holes are injected from the third electrode 108 into the layer 106h having a hole-transport property. With such a configuration, the hole and electron injecting property and transporting property can be improved, so that the driving voltage can be lowered. Then, the injected electrons and holes are recombined, whereby the molecules of the semiconductor layer 102 are excited as a result, and light emission can be obtained when the excited molecules return to the ground state. With such a structure, light emission can be obtained without applying a large electric field even when the hole transportability of the semiconductor layer 102 is small.

As a material for the layer 106h having a hole-transport property, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4′-bis [N- (3 -Methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 '' -Tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis {N- [4- (N, N-di-m-tolylamino) ) Phenyl] -N-phenylamino} biphenyl (abbreviation: DNTPD), 1,3,5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), 4,4 ′, 4 ″ -Tris (N-carbazolyl) Phenylamine (abbreviated: TCTA), phthalocyanine _{(abbreviation:} H 2 Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and the use of HitoshiTadashiana transporting material having relatively high. In the structure of FIG. 12, the material described in Embodiment Mode 1 can be used as the material of the semiconductor layer 102. In particular, the structure of FIG. 12 is a material generally referred to as an n-type semiconductor, or This structure is effective when an electron transporting material is used as the host material. Note that in order to facilitate recombination of holes and electrons, it is preferable to select a combination in which the energy barrier between the layer 106h having hole transport generation and the semiconductor layer 102 is as small as possible.

  Regarding other structures and effects thereof, FIG. 12A is the same as FIG. 6A, FIG. 12B is the same as FIG. 7B, and FIG. 12C is the same as FIG. The repeated explanation is omitted. See the description of each corresponding figure. Note that FIG. 6 has been described only with reference to FIG. 6A and FIG. 7 only with reference to FIG. 7B, but FIG. 6B, FIG. 7C, and FIG. Also, the configuration of FIG. 12 can be applied.

(Embodiment 3)
A method for manufacturing a semiconductor element of the present invention will be described with reference to FIG. 13 by taking FIG. 2C as an example.

First, a first electrode 15 made of tungsten is formed to a thickness of 100 nm on the quartz substrate 16, and an insulating film 12 made of silicon dioxide (SiO ₂ ) is formed to a thickness of 100 nm on the first electrode 15. Conductive layers 17a and 17b made of tungsten are formed to a thickness of 100 nm. The first electrode 15 may be formed into a desired shape by depositing tungsten over the entire surface of the substrate by sputtering or the like, forming a mask by photolithography, and performing etching. Etching may be either wet etching or dry etching. The insulating film 12 is formed by a CVD method. Further, the conductive layers 17 a and 17 b may be formed in the same manner as the first electrode 15. Then, as a layer 13a made of the second composite material on the conductive layer 17a, Alq and lithium are co-evaporated using a mask by vacuum evaporation with resistance heating so as to have a weight ratio of 1: 0.01. A film is formed, and a layer 13b made of a first composite material is formed on the conductive layer 17b by co-evaporation using a mask by vacuum evaporation using resistance heating so that the molar ratio of the molybdenum oxide and NPB is 1: 1. A 10 nm film was formed. Thus, a second electrode made of the conductive layer 17a and the layer 13a made of the second composite material, and a third electrode made of the conductive layer 17b and the layer 13b made of the first composite material are formed. Thereafter, pentacene is formed as a semiconductor layer 11 by vapor deposition between the second electrode and the third electrode, whereby the semiconductor element of the present invention can be formed. The semiconductor layer 11 is preferably deposited using a mask.

The manufacturing method of the semiconductor element of the present invention described in FIGS. 1, 2A, 3B, 3, 5, 6, 7, and 8 is basically the above described manufacturing order and mask. Only the shape is changed, there is no significant difference, and it can be produced in the same manner and can be appropriately performed by those skilled in the art. 1B and 5B, when a conductive layer is formed on the semiconductor layer 11, the semiconductor layer can be formed by depositing gold by vacuum deposition using a mask. 11 damage is less.

  Note that the semiconductor element of the present invention described in FIGS. 9 to 12 is manufactured by forming a layer 106h having a hole transporting property or a layer 106e having an electron transporting property at a predetermined position by a vacuum deposition method or the like. And can be appropriately performed by those skilled in the art. The thickness of the layer 106h having a hole transporting property or the layer 106e having an electron transporting property is preferably 10 to 100 nm, but is not limited thereto.

(Embodiment 4)
In this embodiment mode, a light-emitting device of the present invention using the semiconductor element described in Embodiment Mode 1 or 2 will be described. The light-emitting device of the present invention includes a panel in which a pixel portion having a light-emitting element is formed, a module in which means for controlling a semiconductor element such as an IC is mounted on the panel, and a means for controlling a semiconductor element such as an IC outside. The module to be provided is included in the category.

  FIG. 14 shows an example of a cross-sectional view (A) and a top view (B) of the light-emitting device of the present invention. The light-emitting device shown in FIG. 14 is an extremely simple example of the light-emitting device of the present invention. Of course, the light-emitting device of the present invention may have other structures, and the light-emitting device of the present invention is at least implemented. The semiconductor element according to Mode 1 or 2 and means for controlling the semiconductor element are provided.

  In FIG. 14A, a base insulating film 201 is provided over a substrate 200, and a first electrode 202 and an external connection portion 203 are formed over the base insulating film 201. A first insulating film 204 is formed so as to cover the first electrode 202, and a second layer 205 made of a second composite material, a second electrode made of a conductive layer 207a, and a layer 206 made of a first composite material are formed thereon. A third electrode made of the conductive layer 207b is provided. Further, the semiconductor layer 208 is formed to cover the second electrode, the third electrode, and the space therebetween, and the semiconductor element 214 is formed.

  The semiconductor element 214 may be protected by the second insulating film 209. A plurality of such semiconductor elements 214 are formed to form a display portion of the light emitting device. The pixel portion in which the semiconductor element 214 is formed is preferably sealed with a sealing substrate 211 using a sealing substrate 211 and the like, and is protected from the external environment. A space formed between the sealing substrate 211 and the second insulating film 209 may be filled with an inert gas or a desiccant may be installed.

  The external connection portion 203 is electrically connected to a flexible printed circuit (FPC) 213 or the like through an anisotropic conductive film 212. A signal from a means (not shown) for controlling the semiconductor element 214 is input to the pixel portion via the FPC 213.

  FIG. 14B is a schematic view seen from the top surface of the light-emitting device. In the light-emitting device in this embodiment, an element substrate 501 over which a semiconductor element is formed and a sealing substrate 502 are attached to each other, and a pixel portion 503 formed over the element substrate 501 is sealed with the sealing substrate 502 and a sealing material. ing. A flexible printed wiring (FPC) is connected to the external connection portion 504 provided around the pixel portion 503, and an external signal is input. As in the present embodiment, the drive circuit and the flexible printed wiring may be provided independently, or like an TCP or the like in which an IC chip is mounted on an FPC on which a wiring pattern is formed. It may be provided in combination.

  Of course, the sealing structure of the light emitting device and the form of the module are not limited to this, and the light emitting device can be manufactured by a known technique following the technique related to the organic EL panel.

  Since the light-emitting device of the present invention can be manufactured using a light but thermally weak substrate such as a plastic, it can be a very light-emitting device. In addition, since plastic or the like has flexibility, a flexible light-emitting device can be obtained. In addition, since the number of elements to be manufactured is small, the yield is high and the cost is reduced. Therefore, the light-emitting device can be manufactured at low cost.

(Embodiment 5)
The light-emitting device described in Embodiment 4 can be mounted on a telephone, a television receiver, or the like as illustrated in FIGS. 15A, 15B, and 15C. Moreover, you may mount in the card etc. which have a function which manages personal information like an ID card.

  FIG. 15A is a diagram of a cellular phone according to the present invention. The main body 5552 includes a display portion 5551, an audio output portion 5554, an audio input portion 5555, operation switches 5556 and 5557, an antenna 5553, and the like. The light-emitting device described in Embodiment 4 is used for the display portion 5551. Since this display portion 5551 is very lightweight, this cellular phone can be a lightweight cellular phone. Further, since the display portion 5551 can be manufactured at low cost, a mobile phone with excellent cost performance can be obtained.

  FIG. 15B illustrates a television receiver of the present invention, which includes a display portion 5531, a housing 5532, a speaker 5533, and the like. The light-emitting device described in Embodiment 4 is used for the display portion 5531. Yes. This television receiver can be a lightweight television receiver because the display portion 5531 is very lightweight. In addition, since the display portion 5531 can be manufactured at low cost, a television receiver with excellent cost performance can be obtained.

  FIG. 15C illustrates an ID card of the present invention, which includes a support body 5541, a display portion 5542, an integrated circuit chip 5543 incorporated in the support body 5541, and the like. The light emitting device described is used. Note that integrated circuits 5544 and 5545 for driving the display portion 5542 are also incorporated in the support body 5541. This ID card has a display portion 5542 and maintains a very light and thin shape. Further, since the display portion 5542 can be manufactured at low cost, the ID card can be manufactured at low cost while including the display portion 5542. Further, for example, information input / output in the integrated circuit chip 5543 can be displayed on the display portion 5542 to check what information is input / output.

(Embodiment 6)
As another embodiment of the present invention, an example in which the semiconductor element described in Embodiment 1 or 2 is applied to a flexible light-emitting device will be described with reference to FIGS.

The light emitting device of the present invention shown in FIG. 16 may be contained in a housing, and includes a main body 610, a pixel portion 611 for displaying an image, a driver IC 612, a receiving device 613, a film battery 614, and the like. The driver IC and the receiving device may be mounted using semiconductor parts. In the light-emitting device of the present invention, a material constituting the main body 610 is formed of a flexible material such as a plastic or a film. Many of these materials are thermally fragile, but by forming a pixel portion using the semiconductor element described in Embodiment 1 or 2, a light-emitting device can be formed using such a heat-sensitive material. It can be made.

  Such a light-emitting device is very light and flexible, and thus can be rolled into a cylindrical shape, and is a light-emitting device that is very advantageous for carrying. A large-screen display medium can be freely carried by the light emitting device of the present invention.

  Such a light emitting device of the present invention is a light emitting device having a high aperture ratio. Further, since there are few elements to be manufactured as compared with a light-emitting device using an organic EL element, the light-emitting device has a high yield. The light-emitting device of the present invention is also a light-emitting device that can be easily manufactured. Furthermore, the light-emitting device of the present invention is a light-emitting device with low driving voltage and low power consumption.

  Note that the light-emitting device shown in FIG. 16 includes a navigation system, a sound reproduction device (car audio, audio component, etc.), a personal computer, a game machine, a portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.) ), Home appliances such as refrigerators, washing machines, rice cookers, landline telephones, vacuum cleaners, thermometers, etc., to large-area information displays such as hanging advertisements in trains, and information on arrival and departure of train stations and airports. It can be used mainly as a means for displaying still images.

The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The upper surface schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The cross-sectional schematic diagram of the organic light emitting transistor of this invention. The figure which shows the preparation methods of the organic light emitting transistor of this invention. The cross section and upper surface schematic diagram of the light-emitting device of this invention. FIG. 14 illustrates an electronic device of the invention. FIG. 14 illustrates an electronic device of the invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Semiconductor layer 12 Insulating film 13a Layer 13b made of second composite material Layer 15 made of first composite material 15 First electrode 16 Quartz substrate 17a Conductive layer 17b Conductive layer 100 First electrode 101 Insulating film 102 Semiconductor layer 103 Layer 103a made of the second composite material Layer 103b made of the second composite material Layer 103c made of the second composite material 103c Layer 103d made of the second composite material Layer 103e made of the second composite material Second composite material Layer 104 made of the first composite material 104a layer 104b made of the first composite material 104c layer 104c made of the first composite material 104d layer 104e made of the first composite material 104e 1 layer 105a conductive layer 105b conductive layer 105c conductive layer 105d conductive layer 105e conductive layer 106e Layer 106h layer 107 having hole transporting property second electrode 108 third electrode 109 channel length direction 200 substrate 201 base insulating film 202 first electrode 203 external connection portion 204 insulating film 205 made of second composite material Layer 206 First layer made of composite material 207a Conductive layer 207b Conductive layer 208 Semiconductor layer 209 Insulating film 210 Sealing material 211 Sealing substrate 212 Anisotropic conductive film 213 Flexible printed circuit board (FPC)
214 Semiconductor element 501 Element substrate 502 Sealing substrate 503 Pixel portion 504 External connection portion 610 Main body 611 Pixel portion 612 Driver IC
613 Receiver 614 Film battery 5531 Display unit 5532 Housing 5533 Speaker 5541 Support body 5542 Display unit 5543 Integrated circuit chip 5544 Integrated circuit 5551 Display unit 5552 Main body 5553 Antenna 5554 Audio output unit 5555 Audio input unit 5556 Operation switch

Claims (45)

A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The semiconductor element, wherein the layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The semiconductor element is characterized in that the third electrode is formed of two layers of the first composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 2,
The length of the conductive layer in the channel length direction is shorter than the length of the layer made of the first composite material in the channel length direction. In claim 2,
The semiconductor element, wherein the conductive layer is covered with a layer made of the first composite material. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The semiconductor element is characterized in that the third electrode is formed of two layers of a layer made of the first composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 5,
The semiconductor element, wherein the conductive layer is covered with a layer made of the first composite material. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The semiconductor element is characterized in that the second electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 7,
The length of the conductive layer in the channel length direction is shorter than the length of the layer made of the second composite material in the channel length direction. In claim 7,
The semiconductor element, wherein the conductive layer is covered with a layer made of the second composite material. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The second electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 10,
The semiconductor element, wherein the conductive layer is covered with a layer made of the second composite material. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The second electrode has, at least in part, a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
In the second electrode, the layer made of the second composite material is formed in contact with the semiconductor layer,
The third electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part and a layer made of the second composite material,
The third electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the third electrode, the layer made of the first composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are at least in part. A semiconductor element which is in contact with each other. A first electrode;
A semiconductor layer containing an organic compound;
An insulating film that electrically insulates the first electrode from the semiconductor layer;
A second electrode for injecting electrons into the semiconductor layer;
A third electrode for injecting holes into the semiconductor layer;
The third electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
In the third electrode, the layer made of the first composite material is formed in contact with the semiconductor layer,
The second electrode includes at least a layer made of a second composite material containing an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal and a layer made of the first composite material. And
The second electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the second electrode, the layer made of the second composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are at least in part. A semiconductor element which is in contact with each other. In any one of Claims 1 thru / or Claim 13,
The semiconductor element, wherein the semiconductor layer emits light when a voltage is applied between the second electrode and the third electrode. In any one of Claims 1 thru / or Claim 13,
When a voltage is applied between the second electrode and the third electrode, the semiconductor layer emits light,
A light emitting luminance is changed by changing a voltage applied to the first electrode. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
The organic transistor according to claim 1, wherein the layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The organic transistor according to claim 1, wherein the source electrode is formed of two layers of a layer made of the first composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 17,
An organic transistor, wherein a length of the conductive layer in a channel length direction is shorter than a length of the layer made of the first composite material in a channel length direction. In claim 17,
The organic transistor, wherein the conductive layer is covered with a layer made of the first composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The organic transistor is characterized in that the source electrode is formed of two layers of a layer made of the first composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 20,
The organic transistor, wherein the conductive layer is covered with a layer made of the first composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
2. The organic transistor according to claim 1, wherein the drain electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 22,
The length of the conductive layer in the channel length direction is shorter than the length of the layer made of the second composite material in the channel length direction. In claim 22,
The organic transistor, wherein the conductive layer is covered with a layer made of the second composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer;
The drain electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 25,
The organic transistor, wherein the conductive layer is covered with a layer made of the second composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part,
In the drain electrode, the layer made of the second composite material is formed in contact with the semiconductor layer,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part and a layer made of the second composite material,
The source electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the source electrode, the layer made of the first composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are in contact at least partially. An organic transistor characterized by comprising: A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part,
In the source electrode, the layer made of the first composite material is formed in contact with the semiconductor layer,
The drain electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or alkaline earth metal at least in part and a layer made of the first composite material,
The drain electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the drain electrode, the layer made of the second composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are in contact at least in part. An organic transistor characterized by comprising: A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The organic transistor according to claim 1, wherein the layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer,
2. The organic transistor according to claim 1, wherein the source electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 30,
The length of the conductive layer in the channel length direction is shorter than the length of the layer made of the second composite material in the channel length direction. In claim 30,
The organic transistor, wherein the conductive layer is covered with a layer made of the second composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer,
The organic transistor is characterized in that the source electrode is formed of two layers of a layer made of the second composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 33,
The organic transistor, wherein the conductive layer is covered with a layer made of the second composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer,
2. The organic transistor according to claim 1, wherein the drain electrode is formed of two layers of a layer made of the first composite material and a conductive layer, and the conductive layer is not in contact with the semiconductor layer. In claim 35,
An organic transistor, wherein a length of the conductive layer in a channel length direction is shorter than a length of the layer made of the first composite material in a channel length direction. In claim 35,
The organic transistor, wherein the conductive layer is covered with a layer made of the first composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
The layer made of the first composite material and the layer made of the second composite material are in contact with the semiconductor layer,
The drain electrode is formed of two layers of a layer made of the first composite material and a conductive layer, and the conductive layer is in contact with the semiconductor layer. In claim 38,
The organic transistor, wherein the conductive layer is covered with a layer made of the first composite material. A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The drain electrode has a layer made of a first composite material including an organic compound having a hole transporting property and a metal oxide at least in part,
In the drain electrode, the layer made of the first composite material is formed in contact with the semiconductor layer,
The source electrode has a layer made of a second composite material containing an organic compound having an electron transport property and an alkali metal or an alkaline earth metal at least in part and a layer made of the first composite material,
The source electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the source electrode, the layer made of the second composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are in contact at least partially. An organic transistor characterized by comprising: A gate electrode;
A semiconductor layer containing an organic compound;
An insulating film for electrically insulating the gate electrode and the semiconductor layer;
A source electrode;
A drain electrode,
The source electrode has a layer made of a second composite material containing at least part of an organic compound having an electron transporting property and an alkali metal or an alkaline earth metal,
In the source electrode, the layer made of the second composite material is formed in contact with the semiconductor layer,
The drain electrode has a layer made of a first composite material containing an organic compound having a hole transporting property and a metal oxide at least in part and a layer made of the second composite material,
The drain electrode is formed of three layers of a layer made of the first composite material, a layer made of the second composite material, and a conductive layer,
In the drain electrode, the layer made of the first composite material is in contact with the semiconductor layer, and the layer made of the first composite material and the layer made of the second composite material are in contact at least partially. An organic transistor characterized by comprising: In any one of claims 16 to 41,
The organic transistor, wherein the semiconductor layer emits light when a voltage is applied between the source electrode and the drain electrode. In any one of claims 16 to 41,
When a voltage is applied between the source electrode and the drain electrode, the semiconductor layer emits light,
An organic transistor characterized in that light emission luminance is changed by changing a voltage applied to the gate electrode. An organic transistor according to any one of claims 16 to 43 is provided in a pixel portion,
A light-emitting device comprising means for controlling the organic transistor. An organic transistor according to any one of claims 16 to 43 is provided in a pixel portion,
An electric device comprising a display portion having means for controlling the organic transistor.

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