JP2006319256A - Airtight terminal for optical semiconductor device - Google Patents

Airtight terminal for optical semiconductor device Download PDF

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JP2006319256A
JP2006319256A JP2005142659A JP2005142659A JP2006319256A JP 2006319256 A JP2006319256 A JP 2006319256A JP 2005142659 A JP2005142659 A JP 2005142659A JP 2005142659 A JP2005142659 A JP 2005142659A JP 2006319256 A JP2006319256 A JP 2006319256A
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emitting element
light emitting
optical semiconductor
element mounting
outer frame
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Tomoo Imamura
智雄 今村
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin airtight terminal having excellent heat dissipation at low cost as an airtight terminal mounted with an optical semiconductor element such as a laser diode. <P>SOLUTION: The airtight terminal for the optical semiconductor device is constituted by joining a heat radiating body with an optical semiconductor element fitting portion and an external frame portion where an optical semiconductor element fitting reference is arranged, and a base body with a lead terminal formed while insulated by glass together by using a metal-based soldering material. The optical semiconductor element fitting portion is raised by bending a thin plate and partially connected to the external frame which has two edges formed in a blade shape at least on the left and right sides of the base body. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、光半導体装置用気密端子に係わり、特に光ピックアップなどに用いられる薄型で放熱性に優れる光半導体レーザー装置用気密端子に関するものである。   The present invention relates to an airtight terminal for an optical semiconductor device, and more particularly to a thin airtight terminal for an optical semiconductor laser device which is used for an optical pickup or the like and is excellent in heat dissipation.

光ピックアップなどに用いられる半導体レーザー装置用気密端子の要求特性として、半導体レーザーの発光素子の発する熱を端子外部へ放散させる放熱性は重要な特性のひとつであり、これは特にCDやDVDの記録系に用いる場合は半導体レーザーの高出力化が求められ、それに伴う発光素子の発熱は増加し、この発熱が半導体レーザー装置の特性保証を困難とするため、半導体レーザー装置用気密端子の放熱構造については工夫が不可欠となってくる。   As a required characteristic of an airtight terminal for a semiconductor laser device used for an optical pickup or the like, heat dissipation that dissipates heat generated by the light emitting element of the semiconductor laser to the outside of the terminal is one of the important characteristics, and this is particularly the recording of CD and DVD. When used in systems, it is required to increase the output of the semiconductor laser, and the accompanying heat generation of the light emitting element increases. This heat generation makes it difficult to guarantee the characteristics of the semiconductor laser device. Ingenuity is indispensable.

さらに近年、光ピックアップを搭載する光ディスク用ドライブはスリム化が進み、12.7mmのスリムドライブや9.5mmのウルトラスリムに用いられる光ピックアップにはそれに適した半導体レーザー装置が用いられるが、それらを構成する気密端子は、小型、薄型の気密端子が必要となる。そのため半導体レーザー装置用気密端子のサイズはスリムドライブで多く使用されているφ5.6mmの外径をもつ気密端子の基体を部分的にカットすることにより3.0mmなどに薄くしたものが提案されている。さらには前記φ5.6mmを全体的に小さくしたφ3.3mm、φ3.5mm、φ3.8mmなどの外径をもつ気密端子も提案されている。しかしながら小型、薄型化をねらうと、気密端子の基体に立設された発光素子取り付け部となる放熱部は必然的にそのサイズが小さくなる傾向にあり、放熱性は不十分であった。   In recent years, optical disk drives equipped with optical pickups have become slimmer, and suitable semiconductor laser devices are used for optical pickups used for 12.7 mm slim drives and 9.5 mm ultra slims. The airtight terminal to be configured needs a small and thin airtight terminal. Therefore, the size of the hermetic terminal for semiconductor laser devices has been proposed to be reduced to 3.0 mm by partially cutting the base of the hermetic terminal having an outer diameter of φ5.6 mm, which is often used in slim drives. Yes. Furthermore, airtight terminals having outer diameters such as φ3.3 mm, φ3.5 mm, and φ3.8 mm, in which φφ5.6 mm is entirely reduced, have been proposed. However, in order to reduce the size and thickness, the heat dissipating part serving as the light emitting element mounting part erected on the base of the hermetic terminal inevitably tends to be reduced in size, and the heat dissipation is insufficient.

前述する理由で、薄型で放熱性の向上を目的とした気密端子として図4に示す気密端子が提案されている(特許文献1)。図4(a)は前記気密端子の上面図であり、図4(b)は図4(a)のf−f’における断面図である。この気密端子はリード封着穴207が形成されたアイレット部分201と発光素子が取り付けられるヒートシンク203が形成されたアイレット部分202とを左右に分けて設けられている。前記リード封着穴207にはリード206がガラス205にて気密に封着されている。ここで前記アイレット部分201は軟鋼で形成されているため、リードを気密封着する上で十分な圧縮応力を加えることのできる構造となっている。また前記アイレット部分202は銅または銅合金からなる高熱伝導率素材から形成されているため発光素子からの発熱を効率よく放散できるものである。さらに、アイレット部分202はリード封着穴207が形成されたアイレット部分に制限されずに、ヒートシンク203を大型のヒートシンク203に形成でき、発光素子からの発熱を効率よく放散できる。なお前述する気密端子においては、リード封着穴207が形成されたアイレット部分201の形成用の素材とヒートシンク203が形成されたアイレット部分202の形成用の素材とを一体にて接合してなるクラッド材を用いてアイレットを構成することを好適としている。これにより前述する構成により形成された図4に代表される半導体装置用気密端子は放熱性が向上し、薄型化された電子機器の内側に横に寝かせた状態で実装することが可能となっている。
特開平11−260952号公報
For the reasons described above, the hermetic terminal shown in FIG. 4 has been proposed as a hermetic terminal that is thin and aims to improve heat dissipation (Patent Document 1). 4A is a top view of the hermetic terminal, and FIG. 4B is a cross-sectional view taken along line ff ′ of FIG. 4A. The airtight terminal is provided with an eyelet portion 201 in which a lead sealing hole 207 is formed and an eyelet portion 202 in which a heat sink 203 to which a light emitting element is attached is divided into left and right. A lead 206 is hermetically sealed with glass 205 in the lead sealing hole 207. Here, since the eyelet portion 201 is made of mild steel, the eyelet portion 201 has a structure capable of applying a sufficient compressive stress to hermetically seal the lead. Further, since the eyelet portion 202 is made of a high thermal conductivity material made of copper or a copper alloy, heat generated from the light emitting element can be efficiently dissipated. Further, the eyelet portion 202 is not limited to the eyelet portion in which the lead sealing hole 207 is formed, and the heat sink 203 can be formed on the large heat sink 203, and heat generated from the light emitting element can be efficiently dissipated. In the above-described airtight terminal, a clad formed by integrally joining a material for forming the eyelet part 201 in which the lead sealing hole 207 is formed and a material for forming the eyelet part 202 in which the heat sink 203 is formed. It is preferable that the eyelet is made of a material. As a result, the airtight terminal for a semiconductor device represented by FIG. 4 formed with the above-described structure has improved heat dissipation, and can be mounted in a state where it is laid sideways inside a thin electronic device. Yes.
Japanese Patent Laid-Open No. 11-260952

しかしながら、前述する構成を取った場合、アイレットへ設けられたキャップシール用のエリアにキャップを接着する際、素材の異なるアイレットで構成しているため、従来の抵抗溶接法を採用することが困難であり、金属ろう材などの接着法を取る必要があり、工程が煩雑となり得るものであった。また、前述したアイレット部分201の素材とアイレット部分202の素材とを、クラッド材で構成する場合、前記クラッド材は軟鋼や銅などの単一素材よりも材料費が高くなることが言え、薄型で放熱性向上のメリットがある反面、キャップシール性、コスト性においてデメリットが考えられた。そこで本発明は前述した点に鑑みてなされたものであり、放熱性が良好な低コストの薄型の光半導体装置用気密端子を提供することを目的としている。   However, in the case of adopting the above-described configuration, when the cap is bonded to the cap seal area provided on the eyelet, it is difficult to adopt the conventional resistance welding method because the cap is composed of different eyelets. In addition, it is necessary to take a bonding method for a metal brazing material or the like, and the process can be complicated. In addition, when the material of the eyelet portion 201 and the material of the eyelet portion 202 described above are made of a clad material, it can be said that the clad material has a higher material cost than a single material such as mild steel or copper. On the other hand, there is a merit of improving heat dissipation, but demerits were considered in cap sealing and cost. Accordingly, the present invention has been made in view of the above-described points, and an object of the present invention is to provide a low-cost thin hermetic terminal for an optical semiconductor device having good heat dissipation.

上記課題を解決するため本発明では、発光素子取り付け部と発光素子取り付け基準となる切り欠けの配置された外枠部を有する放熱体が、ガラスにより絶縁形成されたリード端子を有する基体に金属系ろう材により接合された光半導体装置用気密端子において、前記放熱体は薄板からの折り曲げにより立設成形され、前記発光素子取り付け部と前記外枠とが部分的に連結され、外枠の対向した2辺を残し、少なくとも一辺が開放しているとともに残りの外枠のうち、発光素子取り付け基準となる切り欠けが対向して配置された2辺が翼状に基体の左右に形成されていることを特徴としているものである。   In order to solve the above-described problems, in the present invention, a radiator having a light emitting element mounting portion and an outer frame portion in which a notch serving as a light emitting element mounting reference is arranged is provided on a base having a lead terminal insulated by glass. In an airtight terminal for an optical semiconductor device joined by a brazing material, the heat radiator is formed upright by bending from a thin plate, the light emitting element mounting portion and the outer frame are partially connected, and the outer frame faces each other. Two sides are left, at least one side is open, and among the remaining outer frames, two sides where the cutouts serving as the light emitting element mounting reference are opposed to each other are formed on the left and right sides of the base in a wing shape. It is a feature.

これによれば発光素子からの発熱は連結部を経由し、放熱部である外枠へと熱伝導していくので効率よく外部へと放熱できる。さらに外枠の一方向あるいは2方向が開放していることにより、発光素子取り付け部を切り抜き、折り曲げ立設する長さに制約がなくなるため、気密端子が薄型となっても十分に発光素子を取り付けるエリアを確保できる。また放熱体である発光素子取り付け部は、従来からある複雑なプレスによる隆起立ち上げする必要もなく、低コストとなる一方、発光素子取り付け部の高さ変更においても簡易なため利便性がある。なおキャップシール性においては、キャップ溶接に適した軟鋼などからなる基体にキャップシールエリアを設けているため、φ5.6などの外径をもつ半導体レーザー装置用気密端子と同等のキャップシール性が得られる。   According to this, the heat generated from the light emitting element is conducted through the connecting portion to the outer frame which is a heat radiating portion, so that heat can be efficiently radiated to the outside. Furthermore, since one or two directions of the outer frame are open, there is no restriction on the length of the light-emitting element mounting portion that is cut out and bent, so that the light-emitting element can be mounted sufficiently even if the hermetic terminal is thin. An area can be secured. In addition, the light emitting element mounting portion, which is a heat radiator, does not need to be raised and raised by a conventional complicated press, and is low in cost. However, it is convenient because the height of the light emitting element mounting portion can be easily changed. In terms of cap sealability, since a cap seal area is provided in a base made of mild steel suitable for cap welding, the cap sealability equivalent to that of a hermetic terminal for semiconductor laser devices having an outer diameter of φ5.6 is obtained. It is done.

以下本発明の実施の形態について、図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

(実施の形態)
図1は、本発明の実施の形態1における図であり、図1(a)は平面図、図1(b)は、図1(a)のd−d’線における断面図である。また図1(c)は折り曲げ後の放熱体形状の斜視図であり、図1(d)は半導体レーザーキャップを取り付けた正面図である。
(Embodiment)
1A and 1B are diagrams according to Embodiment 1 of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along the line dd ′ of FIG. FIG. 1C is a perspective view of the shape of the heat dissipation body after bending, and FIG. 1D is a front view with a semiconductor laser cap attached.

図1において、1は基体、2は放熱部(外枠)、3は発光素子取り付け部挿通孔、4は放熱部(発光素子取り付け部)、5は放熱部(連結部)、6はリード端子、7は絶縁ガラス、8はモニター用素子取り付け部、9は隙間、10a、10bは発光素子取り付け基準用切り欠け、11は放熱部(外枠)の開放部、12はキャップ金属枠、13は光透過ガラス窓である。   In FIG. 1, 1 is a base, 2 is a heat radiating portion (outer frame), 3 is a light emitting element mounting portion insertion hole, 4 is a heat radiating portion (light emitting element mounting portion), 5 is a heat radiating portion (connecting portion), and 6 is a lead terminal. , 7 is an insulating glass, 8 is an element mounting portion for monitoring, 9 is a gap, 10a and 10b are notches for attaching a light emitting element, 11 is an open portion of a heat radiating portion (outer frame), 12 is a cap metal frame, 13 is It is a light transmission glass window.

詳細な構成を説明する。図1の(c)は折り曲げ形成後の放熱体であり、熱伝導率の高い金属、例えば熱伝導率が394W/m・kである銅からなり、厚さ0.8mmからなる薄板を用いてプレスと折り曲げにて、図1(c)の形態に形成される。ここで放熱体の外枠は、発光素子取り付け部4を任意に長くすることを可能とするため、開放部11を備えている。さらに発光素子取り付け部4は外枠の上面、および外枠の左右に配置された発光素子取り付け基準用切り欠け10aおよび10bに対し精度良く垂直に折り曲げ成形されている。通常発光素子取り付け部4は基準となる面に対し90°±1°の精度を要求され、また外枠の左右に配置された発光素子取り付け基準用切り欠けを結ぶ線に対し、発光素子取り付け部4は0°±1°に収めなければならない。なお放熱体の形成に関しては、折り曲げを効果的に実施できるように、予め、折り曲げ部に溝を施しておくのも良い。   A detailed configuration will be described. (C) in FIG. 1 is a heat dissipation body after being bent and made of a metal having high thermal conductivity, for example, copper having a thermal conductivity of 394 W / m · k, and a thin plate having a thickness of 0.8 mm. It is formed in the form of FIG. 1C by pressing and bending. Here, the outer frame of the heat dissipating body is provided with an open portion 11 in order to make the light emitting element mounting portion 4 arbitrarily long. Furthermore, the light emitting element mounting portion 4 is bent vertically with high accuracy with respect to the upper surface of the outer frame and the light emitting element mounting reference cutouts 10a and 10b arranged on the left and right sides of the outer frame. Usually, the light emitting element mounting portion 4 is required to have an accuracy of 90 ° ± 1 ° with respect to the reference surface, and the light emitting element mounting portion is connected to a line connecting the light emitting element mounting reference notches arranged on the left and right sides of the outer frame. 4 must be within 0 ° ± 1 °. In addition, regarding formation of a heat radiator, it is good to give a groove | channel to a bending part beforehand so that bending can be implemented effectively.

これによれば、放熱体は複雑な金型を必要としないため、低コストで形成することができる。また発光素子からの発熱は放熱部(発光素子取り付け部)4から放熱部(連結部)5を経由し効率よく放熱部(外枠)2へと熱伝導し、さらに外枠2から効果的に外部へと放熱できるものである。また薄型でありながら、折り曲げによって形成された発光素子取り付け部4は高さ方向に自由度が効くこととなり、発光素子取り付け部4への素子貼り付けのみならず、電子回路などの基板をも貼り付けが可能となる。   According to this, since a heat radiator does not require a complicated metal mold | die, it can form at low cost. Further, heat generated from the light emitting element is efficiently conducted from the heat radiating portion (light emitting element mounting portion) 4 to the heat radiating portion (outer frame) 2 via the heat radiating portion (connecting portion) 5, and further effectively from the outer frame 2. It can dissipate heat to the outside. In addition, the light emitting element mounting portion 4 formed by bending has a degree of freedom in the height direction while being thin, and not only the element is attached to the light emitting element mounting portion 4 but also a substrate such as an electronic circuit is attached. Can be attached.

次に前述した放熱体の発光素子取り付け部4は、予めリード端子6が絶縁ガラス7にて気密封着された基体1の発光素子取り付け部挿通孔3に挿通されるとともに連結部により水平に保持された状態で、前記挿通穴周囲および連結部を銀ろう(図示せず)などによる金属ろう材で固定される。ここで基体1の外周と放熱部(外枠)2とは、ろう付けしても良いししなくても良いが、基体1の素材と放熱体の素材の線熱膨張係数の違いから、ろう付けによる固定の際、歪みの発生や精度出しが困難であるため、利便性から実施の形態では隙間9を設けた構造としている。   Next, the above-described light emitting element mounting portion 4 of the radiator is inserted into the light emitting element mounting portion insertion hole 3 of the base body 1 in which the lead terminals 6 are hermetically sealed with the insulating glass 7 in advance and held horizontally by the connecting portion. In this state, the periphery of the insertion hole and the connecting portion are fixed with a metal brazing material such as silver brazing (not shown). Here, the outer periphery of the substrate 1 and the heat radiating portion (outer frame) 2 may or may not be brazed, but due to the difference in the linear thermal expansion coefficient between the material of the substrate 1 and the material of the radiator. When fixing by attaching, it is difficult to generate distortion or to obtain accuracy. Therefore, in the embodiment, the gap 9 is provided for convenience.

なお、予め形成した基体1はリード端子6がガラス7にて気密封着されており、この工法としては、公知の金属とガラスの気密封着技術である圧縮封着工法をとっているため、詳細な説明は省略する。   In addition, since the base 1 formed in advance is hermetically sealed with the lead terminals 6 with the glass 7, since this method employs a compression sealing method which is a known metal-glass hermetic sealing technology, Detailed description is omitted.

図2は、本発明の実施の形態2における図であり、図2(a)は平面図、図2(b)は、図2(a)のe−e’線における断面図である。また図2(c)は折り曲げ後の放熱体形状の斜視図であり、図2(d)は半導体レーザーキャップを取り付けた正面図である。基本構成は前述した実施形態1と同様であり、放熱部(外枠)2と放熱部(発光素子取り付け部)4を形成する段階において、放熱部(外枠)2の発光素子取り付け基準用切り欠け10a、10bが配置された2辺に放熱部(発光素子取り付け部)4との連結部を配置し、前記発光素子取り付け基準用切り欠け10a、10bが配置された2辺以外の2辺を開放した形状としている。これによれば、さらに一辺を無くしたことで、素子取り付け面に対して垂直方向においてさらに薄型にすることができるものである。   2A and 2B are diagrams according to the second embodiment of the present invention, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line e-e ′ of FIG. FIG. 2 (c) is a perspective view of the shape of the radiator after bending, and FIG. 2 (d) is a front view with a semiconductor laser cap attached. The basic configuration is the same as that of the first embodiment described above, and at the stage of forming the heat dissipating part (outer frame) 2 and the heat dissipating part (light emitting element attaching part) 4, the light emitting element attaching reference cutting of the heat dissipating part (outer frame) 2 is performed. A connecting portion with the heat radiating portion (light emitting element attaching portion) 4 is arranged on the two sides where the notches 10a and 10b are arranged, and two sides other than the two sides where the light emitting element attaching reference notches 10a and 10b are arranged are arranged. The shape is open. According to this, since one side is further eliminated, the thickness can be further reduced in the direction perpendicular to the element mounting surface.

図3は、本発明の実施の形態3における図であり、図3(a)は平面図、図3(b)は上面図である。また図3(c)は折り曲げ後の放熱体形状の斜視図であり、図3(d)は半導体レーザーキャップを取り付けた正面図である。基本構成は前述した実施形態1、実施形態2と同様であるが、詳細を図と共に説明する。   3A and 3B are diagrams according to Embodiment 3 of the present invention, in which FIG. 3A is a plan view and FIG. 3B is a top view. FIG. 3C is a perspective view of the shape of the radiator after bending, and FIG. 3D is a front view with a semiconductor laser cap attached. The basic configuration is the same as in the first and second embodiments described above, but the details will be described with reference to the drawings.

図3において、101は基体、102は放熱部(外枠)、103は発光素子取り付け部挿通孔、104は放熱部(発光素子取り付け部)、105は放熱部(連結部)、106はリード端子、107は絶縁ガラス、108は放熱部(外枠)の開放部、110a、110bは発光素子取り付け基準用切り欠けである。   In FIG. 3, 101 is a base, 102 is a heat radiating portion (outer frame), 103 is a light emitting element mounting portion insertion hole, 104 is a heat radiating portion (light emitting element mounting portion), 105 is a heat radiating portion (connecting portion), and 106 is a lead terminal. 107 is an insulating glass, 108 is an open portion of a heat radiating portion (outer frame), and 110a and 110b are notches for attaching light emitting elements.

詳細な構成を説明する。図3の(c)は折り曲げ形成後の放熱体形状であり、熱伝導率の高い金属、例えば熱伝導率が394W/m・kである銅からなり、厚さ0.8mmからなる薄板を用いてプレスと折り曲げにて、図3(c)の放熱体の形態に形成される。ここで放熱体の外枠102は、発光素子取り付け部104を任意に長くすることを可能とするため、開放部108を備えている。ここで発光素子取り付け部104は外枠102に対し精度良く垂直に折り曲げられており、さらに外枠の左右に配置された発光素子取り付け基準用切り欠け110aおよび110bに対し精度良く水平に折り曲げ成形されている。通常放熱部104は基準となる面に対し公差±0.03mmの精度を要求され、さらに0°±1°の水平度と90°±1°の垂直度が要求される。なお放熱体の形成に関しては、折り曲げを効果的に実施できるように、予め、折り曲げ部に溝を施しておくのも良い。   A detailed configuration will be described. (C) in FIG. 3 shows the shape of the heat dissipation body after being bent and is made of a metal having high thermal conductivity, for example, copper having a thermal conductivity of 394 W / m · k, and a thin plate having a thickness of 0.8 mm. Then, it is formed in the form of the heat radiating body of FIG. Here, the outer frame 102 of the heat dissipating body is provided with an open portion 108 so that the light emitting element mounting portion 104 can be arbitrarily lengthened. Here, the light emitting element mounting portion 104 is bent vertically with high accuracy with respect to the outer frame 102, and is further bent with high accuracy with respect to the light emitting element mounting reference cutouts 110a and 110b arranged on the left and right sides of the outer frame. ing. Usually, the heat radiating portion 104 is required to have a tolerance of ± 0.03 mm with respect to a reference surface, and further, a horizontal degree of 0 ° ± 1 ° and a vertical degree of 90 ° ± 1 ° are required. In addition, regarding formation of a heat radiator, it is good to give a groove | channel to a bending part beforehand so that bending can be implemented effectively.

これによれば、放熱体は複雑な金型を必要としないため、低コストで形成することができる。また発光素子からの発熱は放熱部(発光素子取り付け部)104から放熱部(連結部)105を経由し効率よく放熱部(外枠)102へと熱伝導し、さらに外枠102から効果的に外部へと放熱できるものである。また薄型でありながら、折り曲げによって形成された発光素子取り付け部104は高さ方向に自由度が効くこととなり、発光素子取り付け面への素子貼り付けのみならず、電子回路などの基板をも貼り付けが可能となる。   According to this, since a heat radiator does not require a complicated metal mold | die, it can form at low cost. Further, heat generated from the light emitting element is efficiently conducted from the heat radiating portion (light emitting element mounting portion) 104 to the heat radiating portion (outer frame) 102 via the heat radiating portion (connecting portion) 105, and further effectively from the outer frame 102. It can dissipate heat to the outside. In addition, the light emitting element mounting portion 104 formed by bending has a degree of freedom in the height direction while being thin, and not only the element is attached to the light emitting element mounting surface but also a substrate such as an electronic circuit is attached. Is possible.

次に予め公知の技術により基体101にリード端子106と絶縁ガラス107が気密封着された基体101の前記放熱部(発光素子取り付け部)104の挿通穴103に前記放熱部(発光素子取り付け部)104を挿通し、銀ろうなどの金属ろうにより固定している。ここで基体101の外周と放熱部(外枠)102とは、ろう付けしても良いししなくても良いが、基体101の素材と放熱体の素材の線熱膨張係数の違いから、ろう付けによる固定の際、歪みの発生や精度出しが困難であるため、利便性から実施の形態では隙間110を設けた構造としている。   Next, the heat radiating portion (light emitting element mounting portion) is inserted into the insertion hole 103 of the heat radiating portion (light emitting element mounting portion) 104 of the base 101 in which the lead terminal 106 and the insulating glass 107 are hermetically sealed to the base 101 by a known technique in advance. 104 is inserted and fixed by metal brazing such as silver brazing. Here, the outer periphery of the base body 101 and the heat radiating portion (outer frame) 102 may or may not be brazed, but due to the difference in the coefficient of linear thermal expansion between the material of the base body 101 and the material of the heat sink. When fixing by attaching, it is difficult to generate distortion or to obtain accuracy. Therefore, in the embodiment, the gap 110 is provided for convenience.

なお予め形成した基体101はリード端子106が絶縁ガラス107にて気密封着されており、この工法としては、公知の金属とガラスの気密封着技術である圧縮封着工法をとっているため、詳細な説明は省略する。   In addition, since the base 101 formed in advance is hermetically sealed with the lead terminal 106 by the insulating glass 107, since this method employs a compression sealing method that is a known hermetic sealing technique of metal and glass, Detailed description is omitted.

ここで前述した実施の形態において、放熱体である外枠は直線で構成する必要が無く、円弧などの曲線で構成しても良い。また図示ではグランド端子となるアースリードを省略したが、基体裏面に抵抗溶接あるいはろう付けにより接着するのが望ましい。さらに放熱体を形成する材厚は0.8mmとしたが、放熱体の強度や加工性を加味し、適宜変更できることは言うまでもない。   In the above-described embodiment, the outer frame that is a heat radiator does not need to be configured with a straight line, and may be configured with a curve such as an arc. In addition, although an earth lead serving as a ground terminal is omitted in the drawing, it is desirable to adhere to the back surface of the substrate by resistance welding or brazing. Furthermore, although the thickness of the material forming the radiator is 0.8 mm, it goes without saying that it can be appropriately changed in consideration of the strength and workability of the radiator.

本発明の光半導体装置用気密端子は、レーザーダイオードなどの発光素子を搭載する光半導体装置用気密端子に関するものであり、放熱性の良好な薄型化気密端子を低コストで提供することを目的とし、光半導体装置の小型化として有用であり、特に光ピックアップに用いられる半導体レーザー装置などは、CDやDVDドライブのスリム化に適している。   The hermetic terminal for an optical semiconductor device of the present invention relates to an airtight terminal for an optical semiconductor device on which a light emitting element such as a laser diode is mounted, and aims to provide a thin hermetic terminal having good heat dissipation at low cost. It is useful as a miniaturization of an optical semiconductor device, and a semiconductor laser device used for an optical pickup is particularly suitable for slimming a CD or DVD drive.

(a)本発明の実施の形態1における光半導体装置用気密端子の平面図、(b)図1(a)のd−d’線に沿った断面図、(c)折り曲げ形成後の放熱体の斜視図、(d)半導体レーザーキャップを取り付けた正面図1A is a plan view of an airtight terminal for an optical semiconductor device according to Embodiment 1 of the present invention, FIG. 1B is a cross-sectional view taken along the line dd ′ of FIG. 1A, and FIG. (D) Front view with a semiconductor laser cap attached (a)本発明の実施の形態2における光半導体装置用気密端子の平面図、(b)は図2(a)のe−e’線 に沿った断面図、(c)は折り曲げ形成後の放熱体の斜視図、(d)は半導体レーザーキャップを取り付けた正面図(A) The top view of the airtight terminal for optical semiconductor devices in Embodiment 2 of this invention, (b) is sectional drawing along the ee 'line of Fig.2 (a), (c) is after bending formation. A perspective view of a radiator, (d) is a front view with a semiconductor laser cap attached. (a)本発明の実施の形態3における光半導体装置用気密端子の平面図、(b)は上面図、(c)は折り曲げ形成後の放熱体の斜視図、(d)は半導体レーザーキャップを取り付けた正面図(A) The top view of the airtight terminal for optical semiconductor devices in Embodiment 3 of this invention, (b) is a top view, (c) is a perspective view of the heat sink after bending formation, (d) is a semiconductor laser cap. Installed front view (a)従来の半導体装置用の平面図、(b)は図4(a)のf−f’線 に沿った断面図FIG. 4A is a plan view for a conventional semiconductor device, and FIG. 4B is a cross-sectional view taken along line f-f ′ in FIG.

符号の説明Explanation of symbols

1 基体
2 放熱部(外枠)
3 発光素子取り付け部挿通孔
4 放熱部(発光素子取り付け部)
5 放熱部(連結部)
6 リード端子
7 絶縁ガラス
8 モニター用素子取り付け部
9 隙間
10a、10b 発光素子取り付け基準用切り欠け
11 放熱部(外枠)の開放部
12 キャップ金属枠
13 光透過ガラス窓
101 基体
102 放熱部(外枠)
103 発光素子取り付け部挿通孔
104 放熱部(発光素子取り付け部)
105 放熱部(連結部)
106 リード端子
107 絶縁ガラス
108 放熱部(外枠)の開放部
110a、110b 発光素子取り付け基準用切り欠け
111a、110b 発光素子取り付け基準面
113 キャップ金属枠
114 光透過ガラス窓
1 Base 2 Heat dissipation part (outer frame)
3 Light emitting element mounting part insertion hole 4 Heat dissipation part (light emitting element mounting part)
5 Heat radiation part (connection part)
6 Lead terminal 7 Insulating glass 8 Monitor element mounting part 9 Clearance 10a, 10b Notch for light emitting element mounting reference 11 Open part of heat radiating part (outer frame) 12 Cap metal frame 13 Light transmission glass window 101 Base body 102 Heat radiating part (outside frame)
103 Light-Emitting Element Mounting Part Insertion Hole 104 Heat Dissipation Part (Light-Emitting Element Mounting Part)
105 Heat dissipating part (connecting part)
106 Lead terminal 107 Insulating glass 108 Opening part of heat radiating part (outer frame) 110a, 110b Notch for light emitting element mounting reference 111a, 110b Light emitting element mounting reference surface 113 Cap metal frame 114 Light transmitting glass window

Claims (3)

発光素子取り付け部と発光素子取り付け基準である切り欠けの配置された外枠部を有する放熱体と、
絶縁ガラスにより絶縁形成されたリード端子を有する基体と、
金属系ろう材により接合された光半導体装置用気密端子において、前記発光素子取り付け部は薄板からの折り曲げにより立設成形され、前記外枠部と部分的に連結されていることを特徴とする光半導体装置用気密端子。
A heat dissipating body having a light emitting element mounting portion and an outer frame portion in which a notch serving as a light emitting element mounting reference is disposed;
A base body having a lead terminal insulated by insulating glass;
In an airtight terminal for an optical semiconductor device joined by a metal brazing material, the light emitting element mounting portion is formed upright by bending from a thin plate and is partially connected to the outer frame portion. Airtight terminal for semiconductor devices.
前記放熱体の外枠部は、その一部または2方向以上において開放した状態で折り曲げ形成されていることを特徴とする請求項1記載の光半導体装置用気密端子。 2. The hermetic terminal for an optical semiconductor device according to claim 1, wherein the outer frame portion of the heat dissipating member is bent in a state where the outer frame portion is opened in part or in two or more directions. 前記放熱体が銅または銅合金からなる請求項1、2記載の光半導体装置用気密端子。 The hermetic terminal for an optical semiconductor device according to claim 1, wherein the radiator is made of copper or a copper alloy.
JP2005142659A 2005-05-16 2005-05-16 Airtight terminal for optical semiconductor device Pending JP2006319256A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7467877B2 (en) 2019-10-17 2024-04-16 ウシオ電機株式会社 Semiconductor light emitting device

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS63178344U (en) * 1987-05-09 1988-11-18
JPH0415980A (en) * 1990-05-09 1992-01-21 Rohm Co Ltd Semiconductor laser device
JP2003179292A (en) * 2001-12-10 2003-06-27 Sharp Corp Semiconductor laser and its manufacturing method
JP2003298169A (en) * 2002-04-03 2003-10-17 Nec Compound Semiconductor Devices Ltd Optical semiconductor device and its manufacturing method
JP2004235212A (en) * 2003-01-28 2004-08-19 Matsushita Electric Ind Co Ltd Airtight terminal and semiconductor device using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63178344U (en) * 1987-05-09 1988-11-18
JPH0415980A (en) * 1990-05-09 1992-01-21 Rohm Co Ltd Semiconductor laser device
JP2003179292A (en) * 2001-12-10 2003-06-27 Sharp Corp Semiconductor laser and its manufacturing method
JP2003298169A (en) * 2002-04-03 2003-10-17 Nec Compound Semiconductor Devices Ltd Optical semiconductor device and its manufacturing method
JP2004235212A (en) * 2003-01-28 2004-08-19 Matsushita Electric Ind Co Ltd Airtight terminal and semiconductor device using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7467877B2 (en) 2019-10-17 2024-04-16 ウシオ電機株式会社 Semiconductor light emitting device

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