JP2006315915A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006315915A5 JP2006315915A5 JP2005141202A JP2005141202A JP2006315915A5 JP 2006315915 A5 JP2006315915 A5 JP 2006315915A5 JP 2005141202 A JP2005141202 A JP 2005141202A JP 2005141202 A JP2005141202 A JP 2005141202A JP 2006315915 A5 JP2006315915 A5 JP 2006315915A5
- Authority
- JP
- Japan
- Prior art keywords
- optical member
- fluoride
- member according
- value
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical Effects 0.000 claims 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M Lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L Barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L Calcium fluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L Magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims 1
- 229910001632 barium fluoride Inorganic materials 0.000 claims 1
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
- 238000007781 pre-processing Methods 0.000 claims 1
- 239000002516 radical scavenger Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (7)
前記結晶性光学部材の上面及び底面において、少なくとも中心、外周部及びその中間の3点におけるアルカリ土類金属不純物濃度の最大値及び最小値をC1,C2としたとき、C1/C2の値が1.05以下であることを特徴とする光学部材。 A disk-shaped crystalline optical member,
In the upper surface and bottom surface of the crystalline optical member, at least the center, when the maximum value and the minimum value of the alkaline earth metal impurity concentration in the outer peripheral portion and the three-point of the intermediate was C 1, C 2, C 1 / An optical member having a C 2 value of 1.05 or less.
原料のフッ化物にスカベンジャを添加して、融解、凝固させて前処理を行う工程と、
前記工程により前処理された原料を種結晶にして、坩堝引き下げ法によりフッ化物単結晶を成長させる工程と、
を有し、前記フッ化物単結晶を成長させる工程における、坩堝外壁の坩堝引き下げ方向の温度勾配を10℃/cm以下にすることを特徴とする光学部材の製造方法。 It is a manufacturing method of the optical member according to claim 3 ,
Raw material fluoride by adding scavenger, and performing melt, preprocessing solidifying,
Using the raw material pretreated by the above step as a seed crystal and growing a fluoride single crystal by a crucible pulling method ;
And a temperature gradient in the crucible pulling direction of the outer wall of the crucible in the step of growing the fluoride single crystal is 10 ° C./cm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005141202A JP2006315915A (en) | 2005-05-13 | 2005-05-13 | Optical component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005141202A JP2006315915A (en) | 2005-05-13 | 2005-05-13 | Optical component |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006315915A JP2006315915A (en) | 2006-11-24 |
JP2006315915A5 true JP2006315915A5 (en) | 2008-06-26 |
Family
ID=37536910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005141202A Pending JP2006315915A (en) | 2005-05-13 | 2005-05-13 | Optical component |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2006315915A (en) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10203899A (en) * | 1997-01-23 | 1998-08-04 | Nikon Corp | Fluorite little in alkaline earth metal impurities and its production |
JPH10281992A (en) * | 1997-04-02 | 1998-10-23 | Nikon Corp | Method of measuring component concentration distribution and light transmissivity distribution thereof of optical material |
JP2000119097A (en) * | 1998-10-14 | 2000-04-25 | Nikon Corp | Production of calcium fluoride crystal, and lens |
JP2002286913A (en) * | 2001-03-27 | 2002-10-03 | Nikon Corp | Method for acquiring optical member, optical member and projection exposure device |
JP2003238292A (en) * | 2002-02-14 | 2003-08-27 | Canon Inc | Method of manufacturing fluorite crystal |
JP2004224645A (en) * | 2003-01-23 | 2004-08-12 | Kobe Steel Ltd | Manufacture method of high-purity fluoride single crystal |
EP1475464A1 (en) * | 2003-05-06 | 2004-11-10 | Corning Incorporated | Method for producing an optical fluoride crystal |
-
2005
- 2005-05-13 JP JP2005141202A patent/JP2006315915A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9109302B2 (en) | Method for producing silicon wafers, and silicon solar cell | |
TWI519685B (en) | Method & equipment for producing sapphire single crystal | |
JP5729135B2 (en) | Sapphire seed and manufacturing method thereof, and manufacturing method of sapphire single crystal | |
DE602004004095D1 (en) | MIRROR FOR A DEVICE FOR PRODUCING A CRYSTALLINE BLOCK, AND METHOD FOR THE PRODUCTION THEREOF | |
EP4012078A4 (en) | Sic seed crystal and method for producing same, sic ingot produced by growing said sic seed crystal and method for producing same, and sic wafer produced from said sic ingot and sic wafer with epitaxial film and methods respectively for producing said sic wafer and said sic wafer with epitaxial film | |
JP2006315915A5 (en) | ||
JP5794955B2 (en) | Method for manufacturing substrate with β-Ga2O3 single crystal film | |
JP2004224692A5 (en) | ||
JP4756630B2 (en) | (100) Crystal surface cylindrical fluoride single crystal processing method | |
EP2045371A3 (en) | Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot | |
JP2018115110A5 (en) | ||
ATE325868T1 (en) | METHOD FOR RAPIDLY PRODUCING CRYSTALLEN HAVING DESIRABLE MORPHOLOGY | |
CN1940150A (en) | Method of manufacturing silicon wafer | |
RU2002115061A (en) | METHOD FOR GROWING OPTICAL FLUORITE SINGLE CRYSTALS | |
JP2010248003A (en) | METHOD FOR PRODUCING SiC SINGLE CRYSTAL | |
JP6785573B2 (en) | A method for manufacturing a substrate having a coating and a substrate having a corresponding coating. | |
JP2005097049A5 (en) | ||
RU2493297C1 (en) | Method of growing germanium monocrystals | |
JP2014024716A (en) | Method for manufacturing silicon ingot | |
JP2008294256A5 (en) | ||
JPWO2013031091A1 (en) | Method for producing silicon single crystal | |
JP2018002573A5 (en) | ||
UA13783U (en) | A method for preparing monocrystals of aggages4 | |
RU2261295C1 (en) | Germanium monocrystal growing method | |
JP2009292669A (en) | Silicon wafer |