JP2006310735A - 一体型本体短絡を有する上部ドレインfet - Google Patents
一体型本体短絡を有する上部ドレインfet Download PDFInfo
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- JP2006310735A JP2006310735A JP2005289980A JP2005289980A JP2006310735A JP 2006310735 A JP2006310735 A JP 2006310735A JP 2005289980 A JP2005289980 A JP 2005289980A JP 2005289980 A JP2005289980 A JP 2005289980A JP 2006310735 A JP2006310735 A JP 2006310735A
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- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims 10
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract 2
- 238000012856 packing Methods 0.000 abstract 1
- 239000007943 implant Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 spacer nitride Chemical class 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】上部ドレインMOSゲートデバイスは、半導体ダイの最上部にドレイン17を有し、ダイ基板の底部にソース20を有する。間隔を空けた平行トレンチ30,31は、ダイ上面から、ドリフト領域14、チャネル領域13を介して延び、基板領域において終了する。各トレンチ30,31の底部は、基板ソースをチャネル領域に短絡させるためにシリサイド導体50,51を収容する。シリサイド導体50,51は、その後、その上面において絶縁され、ゲート電極36,37が、チャネル/ソース短絡部を収容するものと同じトレンチ30,31に配置される。
【選択図】図1
Description
Claims (15)
- 上部ドレインMOSゲートデバイスであって、組み合わせとして、
上面及び底面と、前記底面から延びる一導電タイプの基板と、前記基板上の第二の導電タイプのチャネル領域と、前記チャネル領域上の前記一導電タイプのドリフト領域と、を有する半導体ダイと、
前記上面から延びて前記ドリフト領域と前記チャネル領域とを貫通して前記基板領域で終端する、平行に離間した複数のトレンチであって、前記トレンチのそれぞれの底部は、前記基板領域を前記チャネル領域に接続する導電層をそれぞれ有する、複数のトレンチと、
前記トレンチのそれぞれの底部における底部絶縁部と、
少なくとも前記チャネル領域の深さの部分に隣接した、前記トレンチのそれぞれの壁を覆うゲート酸化物と、
前記トレンチのそれぞれの内部において、その底部では前記底部絶縁部によって境界され、その側部では前記ゲート酸化物ライナによって境界された導電ゲート部と、
前記導電ゲート部の上部の上方において、前記トレンチの上部を実質的に充填する上部絶縁部と、
前記上面に配置され、前記トレンチ間の前記ドリフト領域に接触した上部ドレイン電極と、
前記底面に接続された底部ソース電極と、
を備えるデバイス。 - 前記一導電タイプは、Nタイプである、請求項1記載のデバイス。
- 前記導電部は、導電性ポリシリコンである、請求項1記載のデバイス。
- 前記トレンチの前記底部の前記導電層は、導電性シリサイドで形成されている、請求項1記載のデバイス。
- 更に、前記ドリフト領域層上に、前記一タイプのキャリアの増加した濃度を有する接触拡散部を含む、請求項1記載のデバイス。
- 更に、前記ドリフト領域上に導電性シリサイド層を含む、請求項1記載のデバイス。
- 更に、前記第二の導電タイプの拡散部であって、前記チャネル層と前記基板との間に配置され、前記チャネル層よりも高濃度を有する拡散部を含む、請求項1記載のデバイス。
- 更に、前記トレンチの前記壁に形成され、前記チャネル領域から前記基板へ延び、前記導電層の外側の壁に接触する前記一タイプの接触拡散部を含む、請求項1記載のデバイス。
- 更に、前記ドリフト領域層上に、前記一タイプのキャリアの増加した濃度を有する接触拡散部を含む、請求項4記載のデバイス。
- 更に、前記ドリフト領域上に、導電性シリサイド層を含む、請求項1記載のデバイス。
- 更に、前記ドリフト領域上に、導電性シリサイド層を含む、請求項9記載のデバイス。
- 更に、前記第二の導電タイプの拡散部であって、前記チャネル層と前記基板との間に配置され、前記チャネル層よりも高濃度を有する拡散部を含む、請求項10記載のデバイス。
- 更に、前記第二の導電タイプの拡散部であって、前記チャネル層と前記基板との間に配置され、前記チャネル層よりも高濃度を有する拡散部を含む、請求項11記載のデバイス。
- 更に、前記トレンチの前記壁に形成され、前記チャネル領域から前記基板へ延び、前記導電層の外側の壁に接触する前記一タイプの接触拡散部を含む、請求項13記載のデバイス。
- 前記導電性シリサイド層は、単一の堆積ステップにおいて形成される、請求項10記載のデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61544704P | 2004-10-01 | 2004-10-01 | |
US11/238,207 US7456470B2 (en) | 2004-10-01 | 2005-09-29 | Top drain fet with integrated body short |
Publications (1)
Publication Number | Publication Date |
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JP2006310735A true JP2006310735A (ja) | 2006-11-09 |
Family
ID=35455871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005289980A Ceased JP2006310735A (ja) | 2004-10-01 | 2005-10-03 | 一体型本体短絡を有する上部ドレインfet |
Country Status (3)
Country | Link |
---|---|
US (1) | US7456470B2 (ja) |
EP (1) | EP1643559A3 (ja) |
JP (1) | JP2006310735A (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070158779A1 (en) * | 2006-01-12 | 2007-07-12 | International Business Machines Corporation | Methods and semiconductor structures for latch-up suppression using a buried damage layer |
US7648869B2 (en) * | 2006-01-12 | 2010-01-19 | International Business Machines Corporation | Method of fabricating semiconductor structures for latch-up suppression |
US7276768B2 (en) * | 2006-01-26 | 2007-10-02 | International Business Machines Corporation | Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures |
US7491618B2 (en) * | 2006-01-26 | 2009-02-17 | International Business Machines Corporation | Methods and semiconductor structures for latch-up suppression using a conductive region |
US20070194403A1 (en) * | 2006-02-23 | 2007-08-23 | International Business Machines Corporation | Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods |
US7982284B2 (en) * | 2006-06-28 | 2011-07-19 | Infineon Technologies Ag | Semiconductor component including an isolation structure and a contact to the substrate |
DE102006029701B4 (de) * | 2006-06-28 | 2017-06-01 | Infineon Technologies Ag | Halbleiterbauteil sowie Verfahren zur Herstellung eines Halbleiterbauteils |
US7633120B2 (en) * | 2006-08-08 | 2009-12-15 | Alph & Omega Semiconductor, Ltd. | Inverted-trench grounded-source field effect transistor (FET) structure using highly conductive substrates |
US7754513B2 (en) * | 2007-02-28 | 2010-07-13 | International Business Machines Corporation | Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures |
US7818702B2 (en) * | 2007-02-28 | 2010-10-19 | International Business Machines Corporation | Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates |
US7989885B2 (en) * | 2009-02-26 | 2011-08-02 | Infineon Technologies Austria Ag | Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same |
US10205017B2 (en) * | 2009-06-17 | 2019-02-12 | Alpha And Omega Semiconductor Incorporated | Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
DE102010039258B4 (de) * | 2010-08-12 | 2018-03-15 | Infineon Technologies Austria Ag | Transistorbauelement mit reduziertem Kurzschlussstrom |
CN107482054B (zh) | 2011-05-18 | 2021-07-20 | 威世硅尼克斯公司 | 半导体器件 |
US8471331B2 (en) * | 2011-08-15 | 2013-06-25 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device with source-substrate connection and structure |
US8723238B1 (en) | 2013-03-15 | 2014-05-13 | Semiconductor Components Industries, Llc | Method of forming a transistor and structure therefor |
US9466708B2 (en) | 2013-03-15 | 2016-10-11 | Semiconductor Components Industries, Llc | Method of forming a transistor and structure therefor |
US9397159B2 (en) | 2014-09-12 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide region of gate-all-around transistor |
US11869967B2 (en) | 2021-08-12 | 2024-01-09 | Alpha And Omega Semiconductor International Lp | Bottom source trench MOSFET with shield electrode |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63288068A (ja) * | 1987-05-20 | 1988-11-25 | Sanyo Electric Co Ltd | 半導体装置 |
JPH04212469A (ja) * | 1990-01-29 | 1992-08-04 | Motorola Inc | 基板ソースコンタクトを具備するmosfet及びその製造方法 |
JP2003505864A (ja) * | 1999-07-20 | 2003-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチ・ゲート電界効果トランジスタとその製造方法 |
JP2003051598A (ja) * | 2001-05-31 | 2003-02-21 | Hideshi Ito | 高周波パワーmosfet |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5134448A (en) | 1990-01-29 | 1992-07-28 | Motorola, Inc. | MOSFET with substrate source contact |
DE10004984A1 (de) * | 2000-02-04 | 2001-08-16 | Infineon Technologies Ag | Vertikales Halbleiterbauelement mit Source-Down-Design und entsprechendes Herstellungsverfahren |
US20060220093A1 (en) * | 2002-12-19 | 2006-10-05 | Koninklijke Philips Electronics N.V. | Non-volatile memory cell and method of fabrication |
US6906380B1 (en) * | 2004-05-13 | 2005-06-14 | Vishay-Siliconix | Drain side gate trench metal-oxide-semiconductor field effect transistor |
-
2005
- 2005-09-29 US US11/238,207 patent/US7456470B2/en active Active
- 2005-09-30 EP EP05021414A patent/EP1643559A3/en not_active Withdrawn
- 2005-10-03 JP JP2005289980A patent/JP2006310735A/ja not_active Ceased
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63288068A (ja) * | 1987-05-20 | 1988-11-25 | Sanyo Electric Co Ltd | 半導体装置 |
JPH04212469A (ja) * | 1990-01-29 | 1992-08-04 | Motorola Inc | 基板ソースコンタクトを具備するmosfet及びその製造方法 |
JP2003505864A (ja) * | 1999-07-20 | 2003-02-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチ・ゲート電界効果トランジスタとその製造方法 |
JP2003051598A (ja) * | 2001-05-31 | 2003-02-21 | Hideshi Ito | 高周波パワーmosfet |
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Publication number | Publication date |
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US20060113589A1 (en) | 2006-06-01 |
US7456470B2 (en) | 2008-11-25 |
EP1643559A3 (en) | 2007-11-07 |
EP1643559A2 (en) | 2006-04-05 |
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