JP2006310172A - Microrelay and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a microrelay and its manufacturing method, capable of preventing interface exfoliation of a copper-plated layer. <P>SOLUTION: The microrelay is provided with a glass-made body 1 with an inner circuit including fixed contacts S1 to S4 fitted, an armature block equipped with movable contacts coming in and out of contact with the fixed contacts S1 to S4 and fitted in free oscillation to the body 1, a cover put on the top face of the armature block, and an electromagnet device driving the armature. The body 1 has through-holes 10a to 10f, having Cu-plated layers 11a to 11f fitted in penetration for electrically connecting the internal circuit with an external electric circuit, and a TiN layer 12a covering inner periphery faces of the through-holes 10a to 10f and a seeding layer 12 with a Cu layer 12b covering the surface of the TiN layer 12a are interposed between the inner periphery faces of the through-holes 10a to 10f and the Cu-plated layers 11a to 11f. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a microrelay formed using a semiconductor microfabrication technique and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, a microrelay formed using a semiconductor microfabrication technique has been provided. Such a microrelay includes, for example, a body including an electromagnet device and a silicon formed and including a magnetic body and an armature. An armature block that integrally includes an armature board to be configured and a frame that surrounds the entire circumference of the armature board and swingably supports the armature board, and the fixed contact and the movable contact are brought into contact with and separated from each other by the swing of the armature. (For example, patent document 1).

Here, the body is formed in a rectangular plate shape using glass, and through-holes penetrating the upper and lower surfaces of the body are formed in the vicinity of the four corners. On the inner peripheral surface of these through holes, an electrical path for electrically connecting the electrical circuit of the printed circuit board on which the micro relay is mounted and the fixed contact of the micro relay is formed. It is made of chromium, titanium, platinum, cobalt, nickel, gold, an alloy of gold and cobalt, or an alloy thereof, and is formed by plating, vapor deposition, sputtering, or the like.
Japanese Patent Laying-Open No. 2005-50768 (FIGS. 1 and 10)

  By the way, as the above electric path, it is preferable to use one having a small electric resistance, and considering the cost of the material itself, it is preferable to use copper.

However, copper is very diffusible with respect to glass and dielectrics used in the manufacture of semiconductors such as Si and SiO ₂ , and therefore, copper is placed in the through-holes penetrating the glass body as described above. When a plating layer (hereinafter referred to as a Cu plating layer) is formed, there is a problem that the copper plating layer is easily peeled from the inner peripheral surface of the through hole.

  This invention is made | formed in view of the above-mentioned point, The objective is to provide the micro relay which can prevent the interface peeling of Cu plating layer, and its manufacturing method.

  In order to solve the above-mentioned problems, the micro relay of claim 1 includes a glass body provided with at least an internal circuit electrically connected to the fixed contact, and a movable contact contacting and separating from the fixed contact. The armature is provided so as to be swingable with respect to the body, and driving means for driving the armature. The body has a through hole having a Cu plating layer that electrically connects the internal circuit to an external electric circuit. A seed layer having a TiN layer provided on the through hole side and a Cu layer provided on the Cu plating layer side is interposed between the inner peripheral surface of the through hole and the Cu plating layer. And

  According to the invention of claim 1, since the seed layer having the TiN layer is provided between the inner peripheral surface of the through hole and the Cu plating layer, Cu is diffused into the glass body by the TiN layer. It is possible to prevent the Cu plating layer from peeling off due to the diffusion of Cu.

  In the microrelay of claim 2, in addition to the configuration of claim 1, the seed layer has a Cr layer between the TiN layer and the inner surface of the through hole.

  According to the invention of claim 2, since the TiN layer is formed on the inner peripheral surface of the through hole through the Cr layer having better adhesion to the glass than the TiN layer, the inner periphery of the seed layer and the through hole Adhesion between the surfaces can be improved, and thereby the effect of preventing the Cu plating layer from peeling off at the interface can be improved.

  According to a third aspect of the present invention, there is provided a microrelay manufacturing method according to the first aspect, wherein a first step of penetrating a through hole in a body by blasting, and a through-hole after the first step. A second step of forming a TiN layer on the inner peripheral surface of the hole, a third step of forming a Cu layer on the surface of the TiN layer after the second step, and a surface of the Cu layer after the third step And a fourth step of forming a Cu plating layer.

  According to the invention of claim 3, the microrelay of claim 1 can be obtained, and the through hole is formed by blasting, and the inner peripheral surface of the through hole is roughened, whereby the seed layer and Adhesiveness with the inner peripheral surface of the through hole can be improved, and thereby the effect of preventing interfacial peeling of the Cu plating layer can be improved.

  The microrelay manufacturing method according to claim 4 is the microrelay manufacturing method according to claim 2, wherein a first step of penetrating a through hole in the body by blasting and a through-hole after the first step A second step of forming a Cr layer on the inner peripheral surface of the hole, a third step of forming a TiN layer on the surface of the Cr layer after the second step, and a surface of the TiN layer after the third step It has the 4th process of forming Cu layer, and the 5th process of forming a Cu plating layer on the surface of Cu layer after the 4th process.

  According to the invention of claim 4, the microrelay of claim 2 can be obtained, and the through hole is formed by blasting, and the inner peripheral surface of the through hole is roughened, whereby the seed layer and Adhesiveness with the inner peripheral surface of the through hole can be improved, and thereby the effect of preventing interfacial peeling of the Cu plating layer can be improved.

  According to a microrelay manufacturing method of a fifth aspect, in addition to the configuration of the third aspect, a TiN layer and a Cu layer are formed by a CVD method.

  According to the invention of claim 5, by forming the TiN layer and the Cu layer by using the CVD method, the TiN layer and the Cu layer are uniformly formed on the inner peripheral surface of the through hole roughly formed by blasting. Therefore, a minute gap is not generated between the Cu plating layer and the inner peripheral surface of the through hole, thereby improving the effect of preventing the interface peeling of the Cu plating layer.

  According to a sixth aspect of the present invention, in addition to the fourth aspect, the Cr layer is formed by sputtering.

  According to the invention of claim 6, by forming the Cr layer by sputtering, the adhesion between the Cr layer and the inner peripheral surface of the through hole is improved as compared with the case of forming the Cr layer by vapor deposition or the like. This can improve the effect of preventing interfacial peeling of the Cu plating layer.

  Since the present invention can prevent Cu from diffusing into the glass body by the TiN layer, there is an effect that it is possible to prevent interfacial peeling of the Cu plating layer due to Cu diffusion. .

  Embodiments of the present invention will be described below with reference to FIGS.

(Embodiment 1)
The microrelay of this embodiment is a latching relay having a normally open contact and a normally closed contact, and as shown in FIG. 2, a glass body 1 provided with an internal circuit including fixed contacts S1 to S4. And an armature block 2 having an armature A provided with a movable contact (not shown) that contacts and separates from the fixed contacts S1 to S4 and is swingably provided with respect to the body 1, and is attached to the upper surface of the armature block 2 Cover 3 and an electromagnet device 4 serving as driving means for driving the armature A.

  The body 1 is formed in a rectangular plate shape using glass, and as shown in FIG. 1A, through holes 10 a to 10 d that connect the upper surface side and the lower surface side of the body 1 pass through near the four corners. In addition, through-holes 10e and 10f are similarly provided in the center portion in the short direction on both ends of the body 1 in the longitudinal direction. In these through holes 10a to 10f, Cu plating serving as an electric path for electrically connecting an external electric circuit, for example, an electric circuit of a printed circuit board on which a micro relay is mounted and an internal circuit composed of lands 13a to 13f described later. The layers 11a to 11f are formed so as to cover the inner peripheral surfaces of the through holes 10a to 10f and the upper surface openings thereof.

  Here, as shown in FIG. 1C, a seed layer 12 is provided between the Cu plating layers 11a to 11f and the through holes 10a to 10f. The seed layer 12 has a TiN (titanium nitride) layer 12a provided on the through hole 10e side and a Cu layer provided on the Cu plating layer 11e side. The TiN layer 12a is formed so as to cover the inner peripheral surface of the through hole 10e, and the thickness dimension of the TiN layer 12a is preferably 2 nm to 200 nm, and most preferably 5 nm to 30 nm. The Cu layer 12b is formed so as to cover the surface of the TiN layer 12a, and the thickness dimension of the Cu layer 12b is preferably 10 nm to 500 nm, and most preferably 100 nm to 200 nm. FIG. 1C shows a configuration related to the through hole 10e as an example, but the above points are the same for the other through holes 10a to 10d and 10f.

  On the other hand, as shown in FIG. 1 (b), a cross-shaped through hole 14 penetrating the upper and lower surfaces of the body 1 is provided at the center of the body 1. It is formed in a taper shape in which the cross-sectional area gradually becomes smaller. A thin film 15 is tightly bonded to the upper surface of the body 1 so as to close the through-hole 14, and the thin film 15 is formed of silicon or glass and is subjected to processing such as etching or polishing to 5 to 50 μm. The thickness is preferably about 20 μm. The space surrounded by the thin film 15 tightly bonded to the body 1 and the inner peripheral surface of the through-hole 14 of the body 1 serves as an accommodation recess 16 for accommodating the electromagnet device 4 in the body 1.

  Lands 13a to 13d including the above-described fixed contacts S1 to S4 and lands 13e and 13f used for the ground are formed on the upper surface of the body 1, and the internals including the fixed contacts S1 to S4 are formed from these lands 13a to 13f. A circuit is configured. Here, these lands 13a to 13f are formed, for example, by plating on the surface of the first layer L1 such as gold formed by sputtering or the like and the first layer L1 as shown in FIG. 1 (d). And a second layer L2 made of gold or the like.

  As shown in FIG. 1A, the lands 13a to 13d are formed in a long shape with the short direction of the body 1 as the longitudinal direction, and the central portion of the body 1 in the longitudinal direction is a fixed contact. S1 to S4. Further, these lands 13a to 13d cover the upper surface openings of the through holes 10a to 10d and the peripheral portions thereof at portions opposite to the fixed contacts S1 to S4 in the longitudinal direction, whereby the lands 13a to 13d and Each of the through holes 10a to 10d is electrically connected to the Cu plating layers 11a to 11d. Further, as shown in FIG. 1A, the lands 13e and 13f are formed in a long shape with the short direction of the body 1 as the longitudinal direction, and the through holes 10e and 10f are substantially centered in the longitudinal direction. The upper surface opening and the peripheral edge thereof are covered. Accordingly, the lands 13a and 13b are electrically connected to the Cu plating layers 11e and 11f of the through holes 10e and 10f, respectively.

  In addition, on the lower surface of the body 1, as shown in FIG. 3, lands 17a electrically connected to the Cu plating layers 11a to 11f so as to cover the lower surface openings of the through holes 10a to 10f and the periphery thereof, respectively. -17f are formed, and at least the surfaces of the lands 17a to 17f are formed of chromium, titanium, platinum, cobalt, nickel, gold, an alloy of gold and cobalt, an alloy of these, or the like.

  The armature block 2 is formed by etching a silicon substrate having a thickness of about 50 μm to 300 μm, preferably about 200 μm, and surrounds the entire circumference of the armature substrate 2a and the armature substrate 2a so that the armature substrate 2a can swing freely. A supporting frame 2b is integrally provided. A rectangular plate-like magnetic body (not shown) is bonded to the lower surface of the armature substrate 2a, thereby forming the armature A. Here, the magnetic body is formed by machining a magnetic material such as electromagnetic soft iron, electromagnetic stainless steel, and permalloy, and is bonded to the armature substrate 2a by a method such as adhesion, welding, heat fitting, or brazing. In addition, by forming the magnetic body by machining, the thickness can be increased and the attractive force can be improved.

  As shown in FIG. 2, the armature substrate 2 a has a long rectangular magnetic body holding portion 20 to which a magnetic body (not shown) is bonded to the lower surface, and elastic ends on both ends in the longitudinal direction of the magnetic body holding portion 20. The hinge pieces 21a and 21b provided so as to be deformable are integrally provided. A movable contact (not shown) that contacts and separates the fixed contacts S1 and S2 is joined to the lower surface of the hinge piece 21a, and the lower surface of the hinge piece 21b. A movable contact (not shown) that is in contact with and away from the fixed contacts S3 and S4 is joined.

  Extending pieces 22 projecting in the short direction are formed on both sides in the short direction of the central portion in the longitudinal direction of the magnetic body holding portion 20, and a convex portion 22 a is provided on the distal end surface of the extending piece 22. It has been. Further, a fulcrum portion (not shown) serving as a fulcrum for the seesaw operation of the armature substrate 2a is formed on the lower surface of the extended piece 22. Further, a pair of protruding pieces 25a and 25b are formed at the four corners of the magnetic body holding portion 20, and the lower surfaces of the protruding pieces 25a and 25b are in contact with the armature A as a stopper for seesaw operation. A portion (not shown) is formed. Such a contact portion (not shown) is formed to have a predetermined distance from the upper surface of the opposing body 1 when the armature A is leveled.

  The length of the armature substrate 2a in the vertical direction is smaller than the length of the frame 2b in the vertical direction. The lower surface of the armature A (ie, the lower surface of the magnetic body and the lower surface of the magnetic body) The armature substrate 2a is held by the frame 2b so that the lower surface of the movable contact) is positioned upward. Thereby, when the frame 2 b is joined to the body 1, a space part is formed between the lower surface of the armature A and the upper surface of the body 1 for accommodating the armature A so as to be swingable.

  The frame 2b is formed in the shape of a rectangular frame having a size that can surround the entire circumference of the armature substrate 2a. Each frame 2b is provided on the inner surface facing the extension pieces 22 and 22 of the armature substrate 2a. An extending piece 23 provided with a concave portion 23a that fits with the convex portion 22a of the piece 22 is integrally projected. Then, the concave portion 23a of the extended piece 23 of the frame 2b and the convex portion 22a of the extended piece 22 of the armature substrate 2a are concavo-convexly fitted to restrict movement of the armature substrate 2a in the longitudinal direction. Become.

  The armature substrate 2a and the frame 2b are integrally connected by an elastically deformable elastic piece 24. The elastic piece 24 will be described below. The elastic piece 24 integrally connects both side surfaces of the armature substrate 2a in the short direction of the magnetic body holding portion 20 and the inner surface of the frame 2b facing each of the both side surfaces, and the seesaw of the armature substrate 2a. Four lines are provided symmetrically about the axis of operation. The elastic piece 24 is formed in a U-shaped meandering shape on the same plane as the frame 2b. By forming the elastic piece 24 in such a meandering shape, the elastic piece 24 can be formed long. The spring constant of the spring force generated by twisting the elastic piece 24 when the substrate 2a performs the seesaw operation can be appropriately reduced, and the stress applied to the elastic piece 24 can also be dispersed. The elastic piece 24 is formed so that the thickness in the vertical direction is thinner than the thickness in the vertical direction of the frame 2b, and the thickness in the direction intersecting the vertical direction is thinner than the thickness in the vertical direction of the elastic piece 24. .

  The cover 3 is formed in a rectangular plate shape using heat-resistant glass such as Pyrex (registered trademark), and a recess (not shown) for receiving the armature A in a swingable manner is provided on the lower surface.

  As shown in FIG. 2, the electromagnet device 4 accommodated in the body 1 includes a yoke 40, permanent magnets 41, coils 42 a and 42 b, and a substrate 43.

  The yoke 40 is formed by bending or forging an iron plate such as electromagnetic soft iron so that rectangular plate-like leg pieces 40b and 40c rise from both ends of the long rectangular plate-like central piece 40a. Yes.

  The permanent magnet 41 has a rectangular parallelepiped shape, and is magnetized so that the magnetic pole surface 41a on the upper surface side and the magnetic pole surface 41b on the lower surface side have different polarities. The permanent magnet 41 is attached to the yoke 40 with the magnetic pole surface 41b in contact with the center of the upper surface of the central piece 40a of the yoke 40. At this time, the magnetic pole surface 41a of the permanent magnet 41 and the yoke 40 The upper surfaces of the leg pieces 40b and 40c are located on the same plane.

  The coil 42a is wound directly around the central piece 40a between the leg piece 40b and the permanent magnet 41, and comes into contact with the leg piece 40b and the permanent magnet 41 in the longitudinal direction of the yoke 40. Positioning in the direction is made. Similarly, the coil 42 b is directly wound around the central piece 40 a between the leg piece 40 c and the permanent magnet 41, and abuts the leg piece 40 c and the permanent magnet 41 in the longitudinal direction of the yoke 40, thereby 40 is positioned in the longitudinal direction.

  The substrate 43 has a long rectangular shape and is joined to the lower surface of the central piece 40 a of the yoke 40 so that the longitudinal direction of the central piece 40 a and the longitudinal direction of the substrate 43 are orthogonal to each other. The substrate 43 has conductive portions 43a and 43a at both longitudinal ends of the lower surface, and both ends of the coils 42a and 42b are electrically connected to the conductive portions 43a and 43a, respectively.

  Next, the manufacturing method of the micro relay of this embodiment is demonstrated. Since the manufacturing method of the micro relay of the present embodiment is particularly characterized by the manufacturing method of the body 1, only the manufacturing method of the body 1 will be described, and the amateur block 2, the cover 3, and the electromagnet device 4 that are the same as the conventional one. The description of the manufacturing method is omitted.

  The manufacturing method of the body 1 includes a first step of penetrating through holes 10a to 10f in the body 1 by blasting, and a TiN layer 12a on the inner peripheral surface of the through holes 10a to 10f after the first step by a CVD method. A second step of forming a seed layer 12 by forming a Cu layer 12b on the surface of the TiN layer 12a after the second step, and a surface of the seed layer 12 after the third step. In addition to the fourth step of forming the Cu plating layers 11a to 11f on the surface of the Cu layer 12b (that is, the surface of the Cu layer 12b), the step of forming the lands 13a to 13f and 17a to 17f as described above, and the through hole 14 A step of forming, and a step of tightly bonding the thin film 15.

  Here, the first step is a step of forming through holes 10a to 10f at predetermined locations of the body 1 by blasting so that the inner peripheral surfaces of the through holes 10a to 10f become rough surfaces. ing.

  The second step is a TiN layer serving as a barrier layer for preventing Cu from diffusing into the body 1 (that is, in the glass) on the inner peripheral surfaces of the through holes 10a to 10f formed in the first step. This is a step of forming 12a by the CVD method (chemical vapor deposition method). By using the CVD method, the TiN layer 12a can be uniformly formed on the inner peripheral surfaces of the through holes 10a to 10f.

  In the third step, a seed Cu layer 12b for growing the Cu plating layers 11a to 11f on the surface of the TiN layer 12a formed on the inner peripheral surfaces of the through holes 10a to 10f in the second step is formed by a CVD method. In this process, the Cu layer 12b can be uniformly formed on the surface of the TiN layer 12a by using the CVD method. Thereby, the seed layer 12 composed of the TiN layer 12a and the Cu layer 12b is formed.

  In the fourth step, an external circuit such as an electric circuit of a printed board on which a micro relay is mounted and an internal circuit composed of lands 13a to 13f are electrically connected to the surface of the seed layer 12 (that is, the surface of the Cu layer 12b). Is a step of forming Cu plating layers 11a to 11f to be electrical paths connected to the Cu plating layers 11a to 11f. The surfaces of the Cu layer 12b and the upper surface openings of the through holes 10a to 10f are formed by electrolytic plating or the like. It is formed so as to cover.

  Thereafter, as described above, the body 1 is completed through the steps of forming the lands 13a to 13f and 17a to 17f, the step of forming the through holes 14, and the step of closely bonding the thin film 15. In addition, as long as the order of the first to fourth steps is observed, the formation order may be appropriately changed.

  And the body 1, the armature block 2, the cover 3, and the electromagnet apparatus 4 obtained in this way are attached as follows. The armature block 2 is attached to the body 1 by being directly joined to the peripheral portion 18 of the body 1 by a method such as anodic bonding, and the cover 3 is directly attached to the peripheral portion 26 of the armature block 2 by a method such as anodic bonding. It is attached to the armature block 2 by being joined. At this time, the armature A has the movable contact (not shown) of the hinge piece 21a of the armature A and the fixed contacts S1 and S2, and the movable contact (not shown) of the hinge piece 21b and the fixed contacts S3 and S4. Are arranged so as to face each other, and the movable contact and fixed contacts S1 to S4 constitute a contact mechanism that contacts and separates by the swing of the armature A. On the other hand, the electromagnet device 4 is accommodated in the accommodating recess 16 of the body 1 with the tips of the leg pieces 40b, 40c facing upward. At this time, as described above, the through hole 14 of the housing recess 16 is formed in a tapered shape having a gradually decreasing cross-sectional area from the lower surface to the upper surface of the body 1, so that the electromagnet device 4 can be easily housed in the body 1. It has become.

  As described above, the microrelay of this embodiment is obtained. As shown in FIG. 3, bumps 5a to 5h made of a conductive material such as gold, silver, copper, and solder are tightly bonded to the microrelay. Here, the bumps 5a to 5f are placed on the lands 17a to 17f on the lower surface of the body 1, and are closely bonded by heat or the like so as to close the lower surface openings of the through holes 10a to 10f. Are closely bonded to the conductive portions 43a, 43a of the electromagnet device 4 by heat or the like. In order to mount the micro relay on a printed circuit board (not shown), it is only necessary to perform flip chip mounting using bumps 5a to 5h provided on the lower surface of the body 1, whereby the lands 13a to 13f of the body 1 are formed. Connected to the electric circuit of the printed circuit board through the Cu plating layers 11a to 11f of the through holes 10a to 10f, and at the same time, the coils 42a and 42b of the electromagnet device 4 are connected to the electric circuit of the printed circuit board through the conductive portions 43a and 43a. Will be. Here, the lands 13e and 13f are electrically connected to the ground electrode of the printed circuit board (not shown) via the Cu plating layers 11e and 11f, thereby acting as a ground for reducing the characteristic impedance of the micro relay. .

  Next, the operation of this micro relay will be described. When the coils 42a and 42b of the electromagnet device 4 of the micro relay are energized from a predetermined direction, a magnetic body (not shown) of the armature A is attracted to one leg piece 20b, and accordingly, the armature A is a magnetic body. The seesaw operation is performed with the apex of a fulcrum portion (not shown) provided on the lower surface of the extended piece 22 of the holding portion 20 as a fulcrum, and contact is provided on the lower surfaces of the protruding pieces 25a and 25a of the magnetic body holding portion The part (not shown) comes into contact with the upper surface of the body 1. By providing such a contact portion, the magnetic body and the thin film 15 do not collide directly, thereby preventing the magnetic body and the thin film 15 from being damaged. In this state, a movable contact (not shown) provided on the lower surface of the hinge piece 21a of the armature A comes into contact with the fixed contacts S1 and S2 with a predetermined contact pressure. Closed. In this state, when the energization to the coils 42a and 42b is stopped, the magnetic flux generated from the permanent magnet 41 passes through the closed magnetic path of the magnetic body → the leg piece 40b → the permanent magnet 41, so that the contact is turned on. State is maintained.

  On the other hand, when the energization direction of the coils 42a and 42b is opposite to the above case, the magnetic body is attracted to the other leg piece 40c, and the torsional restoring force of the elastic piece 24 is also applied. And the contact portion (not shown) provided on the lower surface of the projecting pieces 25b, 25b of the magnetic body holding portion 20 is in contact with the upper surface of the body 1. It becomes a state. In this state, a movable contact (not shown) provided on the lower surface of the hinge piece 21b of the armature A makes contact with the fixed contacts S3 and S4 with a predetermined contact pressure. Closed. In this state, when the energization to the coils 42a and 42b is stopped, the magnetic flux generated from the permanent magnet 41 passes through the closed magnetic path of the magnetic body → the leg piece 40c → the permanent magnet 41, so that the contact is turned on. State is maintained.

  Thus, the micro relay of the present embodiment is a latching type relay in which the normally open contact and the normally closed contact are switched depending on the energization direction to the coils 42a and 42b.

  According to the micro relay of the present embodiment described above, the seed layer 12 having the TiN layer 12a is provided between the inner peripheral surfaces of the through holes 10a to 10f and the corresponding Cu plating layers 11a to 11f. The TiN layer 12a can prevent Cu in the Cu plating layers 11a to 11f from diffusing into the glass body, and thereby the interface peeling of the Cu plating layers 11a to 11f due to the diffusion of Cu. Can be prevented.

  Moreover, since the through holes 10a to 10f are formed by blasting and the inner peripheral surfaces of the through holes 10a to 10f are roughened, the adhesion between the seed layer 12 and the inner peripheral surfaces of the through holes 10a to 10f is improved. it can. Furthermore, by using the CVD method, the TiN layer 12a and the Cu layer 12b of the seed layer 12 can be uniformly formed on the inner peripheral surface of the through hole that is roughly formed by blasting, whereby the Cu plating layer A minute gap is not generated between the inner peripheral surfaces of 11a to 11f and the through holes 10a to 10f, and the effect of preventing the interfacial peeling of the Cu plating layers 11a to 11f can be further improved.

(Embodiment 2)
The microrelay of this embodiment is characterized by the configuration of the body, particularly the configuration of the seed layer, and the other configurations are the same as those of the first embodiment, and the same configurations are denoted by the same reference numerals. Is omitted.

  That is, in this embodiment, as shown in FIG. 4, the seed layer 19 is provided between the through hole 10a of the body 1 and the Cu plating layer 11a, and the seed layer 19 is located on the through hole 10a side. In addition to the TiN layer 19a provided and the Cu layer 19b provided on the Cu plating layer 11a side, a Cr layer 19c is provided between the TiN layer 19a and the inner peripheral surface 10a of the through hole.

  Here, the Cr layer 19c is formed so as to cover the inner peripheral surface of the through hole 10a, and the thickness dimension is preferably 10 nm to 500 nm, and most preferably 100 nm to 300 nm. The TiN layer 19a is formed so as to cover the surface of the Cr layer 19c, and its thickness dimension is preferably 2 nm to 200 nm, preferably 5 nm to 30 nm, as in the first embodiment. Is optimal. Further, the Cu layer 19b is formed so as to cover the surface of the TiN layer 19a, and the thickness dimension thereof is preferably 10 nm to 500 nm, and preferably 100 nm to 200 nm, as in the first embodiment. Is optimal. FIG. 4 shows a configuration related to the through hole 10a as an example, but the above points are the same for the other through holes 10b to 10f.

  Next, the manufacturing method of the micro relay of this embodiment is demonstrated. Since the manufacturing method of the microrelay of this embodiment is characterized by the manufacturing method of the body 1 as in the first embodiment, only the manufacturing method of the body 1 will be described, and the amateur block 2 and the cover that are the same as the conventional one will be described. 3 and the manufacturing method of the electromagnet device 4 will not be described.

  The manufacturing method of the body 1 includes a first step of penetrating through holes 10a to 10f in the body 1 by blasting, and a Cr layer 19c on the inner peripheral surface of the through holes 10a to 10f after the first step. A second step of forming a TiN layer 19a on the surface of the Cr layer 19c after the second step by a CVD method, and a Cu layer on the surface of the TiN layer 19a after the third step. 4th process of forming seed layer 19 by forming 19b, and 4th process of forming Cu plating layers 11a-11f on the surface of seed layer 19 (that is, the surface of Cu layer 19b) after the fourth process As described above, the step of forming the lands 13a to 13f and 17a to 17f, the step of forming the through hole 14, and the step of closely bonding the thin film 15 are included.

  Here, the first step is a step of forming through holes 10a to 10f at predetermined locations of the body 1 by blasting so that the inner peripheral surfaces of the through holes 10a to 10f become rough surfaces. ing.

  The second step is a step of forming, by sputtering, a seed Cr layer 19c for forming the TiN layer 19a on the inner peripheral surfaces of the through holes 10a to 10f formed in the first step. By using the sputtering method, the adhesion with the glass can be improved as compared with the case where the Cr layer 19c is formed by vapor deposition or the like. Further, when the Cr layer 19c is formed by the sputtering method, if it is formed uniformly on the inner peripheral surface of the through holes 10a to 10f, a minute gap is not generated between the seed layer 19 and the through holes 10a to 10f. Can be.

  The third step is a barrier for preventing Cu from diffusing into the body 1 (that is, into the glass) on the surface of the Cr layer 19c formed on the inner peripheral surfaces of the through holes 10a to 10f by the second step. This is a step of forming the TiN layer 19a as a layer by the CVD method, and the TiN layer 12a can be uniformly formed on the surface of the Cr layer 19c by using the CVD method.

  The fourth step is a step of forming a seed Cu layer 19b by the CVD method for growing the Cu plating layers 11a to 11f on the surface of the TiN layer 19a formed on the surface of the Cr layer 19c in the third step. Yes, the Cu layer 19b can be uniformly formed on the surface of the TiN layer 19a by using the CVD method. When the fourth step is completed, the seed layer 19 composed of the TiN layer 19a, the Cu layer 19b, and the Cr layer 19c is formed.

  In the fifth step, an external circuit such as an electric circuit of a printed circuit board on which a micro relay is mounted and an internal circuit composed of lands 13a to 13f are electrically connected to the surface of the seed layer 19 (that is, the surface of the Cu layer 19b). This is a step of forming Cu plating layers 11a to 11f to be electrical paths connected to the. The Cu plating layers 11a to 11f are formed so as to cover the surface of the Cu layer 19b and the upper surface openings of the through holes 10a to 10f using an electrolytic plating method or the like.

  Thereafter, as described above, the body 1 is completed through the steps of forming the lands 13a to 13f and 17a to 17f, the step of forming the through holes 14, and the step of closely bonding the thin film 15. As long as the order of the first to fifth steps is kept, the formation order may be changed as appropriate.

  The body 1, armature block 2, cover 3, and electromagnet device 4 thus obtained are attached in the same manner as in the first embodiment, thereby obtaining the microrelay of this embodiment. It is done. Note that the operation of the microrelay of this embodiment is substantially the same as that of the microrelay of the first embodiment, and a description thereof will be omitted.

  According to the microrelay of the present embodiment described above, similarly to the first embodiment, the TiN layer 19a is provided between the inner peripheral surfaces of the through holes 10a to 10f and the corresponding Cu plating layers 11a to 11f. Since the seed layer 19 is provided, the TiN layer 19a can prevent Cu in the Cu plating layers 11a to 11f from diffusing into the glass body, thereby causing Cu due to Cu diffusion. Interfacial peeling of the plating layers 11a to 11f can be prevented.

  In addition, since the TiN layer 19a is formed on the inner peripheral surfaces of the through holes 10a to 10f through the Cr layer 19c having better adhesion to the glass than the TiN layer 19a, the seed layer 19 and the through holes 10a to Adhesion with the inner peripheral surface of 10f can be improved, and thereby, the effect of preventing interfacial peeling of the Cu plating layers 11a to 11f can be improved as compared with the first embodiment.

  Furthermore, by forming the Cr layer 19c by sputtering, the adhesion between the Cr layer 19c and the inner peripheral surfaces of the through holes 10a to 10f can be improved as compared with the case where the Cr layer 19c is formed by vapor deposition or the like. Thereby, the adhesion between the seed layer 19 and the inner peripheral surfaces of the through holes 10a to 10f can be further improved, and the effect of preventing the Cu plating layer from being peeled off at the interface can be further improved.

  On the other hand, since the through holes 10a to 10f are formed by blasting and the inner peripheral surfaces of the through holes 10a to 10f are roughened, the adhesion between the seed layer 19 and the inner peripheral surfaces of the through holes 10a to 10f is improved. it can. Moreover, since the seed layer 19 is uniformly formed on the inner peripheral surfaces of the through holes 10a to 10f that are roughly formed by blasting, the Cu plating layers 11a to 11f and the inner peripheral surfaces of the through holes 10a to 10f are formed. A minute gap is not generated between them, and the effect of preventing the interfacial peeling of the Cu plating layers 11a to 11f can be further improved.

  In addition, although the micro relay of this embodiment and the said Embodiment 1 uses the polar type electromagnet apparatus 4 using the permanent magnet 41 as a drive means which drives the armature A, it is a non-polar type which does not use a permanent magnet. The electromagnet device may be used.

  Further, the present invention is not limited to the latching type relay as described in the present embodiment and the first embodiment, and a suitable relay may be used depending on the situation.

(A) is a top view of the principal part of the micro relay of Embodiment 1 of this invention, (b) is a schematic sectional drawing in the MM line | wire of the same figure (a), (c), FIG. 2B is a schematic explanatory view of a portion indicated by N, and FIG. 4D is a schematic explanatory view of a portion indicated by O in FIG. It is a disassembled perspective view of the micro relay of this invention. It is a perspective view of the lower surface side of the micro relay of this invention. It is explanatory drawing which shows the principal part of the micro relay of Embodiment 2 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Body 10a-10f Through hole 11a-11f Cu plating layer 12 Seed layer 12a TiN layer 12b Cu layer S1-S4 Fixed contact

Claims (6)

  A glass body provided with at least an internal circuit electrically connected to the fixed contact, an armature provided with a movable contact contacting and leaving the fixed contact and swingable with respect to the body, and driving the armature A through-hole having a Cu plating layer that electrically connects the internal circuit to an external electric circuit, and is provided between the inner peripheral surface of the through hole and the Cu plating layer. Are interposing a seed layer having a TiN layer provided on the through-hole side and a Cu layer provided on the Cu plating layer side.   The micro relay according to claim 1, wherein the seed layer has a Cr layer between the TiN layer and the inner surface of the through hole.   2. The method for manufacturing a micro relay according to claim 1, wherein a TiN layer is formed on the inner peripheral surface of the through hole after the first step of piercing the through hole in the body by blasting. A second step, a third step of forming a Cu layer on the surface of the TiN layer after the second step, and a fourth step of forming a Cu plating layer on the surface of the Cu layer after the third step; A method for producing a micro relay, comprising:   3. The method of manufacturing a micro relay according to claim 2, wherein a Cr layer is formed on the inner peripheral surface of the through hole after the first step of penetrating the through hole in the body by blasting. A second step, a third step of forming a TiN layer on the surface of the Cr layer after the second step, a fourth step of forming a Cu layer on the surface of the TiN layer after the third step, And a fifth step of forming a Cu plating layer on the surface of the Cu layer after the fourth step.   The method for manufacturing a microrelay according to claim 3, wherein the TiN layer and the Cu layer are formed by a CVD method.   The method for producing a microrelay according to claim 4, wherein the Cr layer is formed by a sputtering method.

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