JP2006292842A - Method for manufacturing color filter, method for manufacturing solid-state image pickup device, and solid-state image pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a color filter excellent in color reproducibility by which a color filter can be formed with high accuracy even when a pixel size is reduced, and to provide a method for manufacturing a solid-state image pickup device, and a solid-state image pickup device. <P>SOLUTION: A green color filter 31 in a checkerboard pattern is formed by etching using an etching mask. Color filter coatings having photosensitivity of second and succeeding colors are formed to cover the green color filter 31 and exposed and developed to form a color filter 32 of the second and succeeding colors inside a region surrounded by the green color filter 31. Then the color filter 32b is made to reflow so as to fill the region surrounded by the green color filter 31 with a color filter 32. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to, for example, a color filter manufacturing method applied to a solid-state imaging device, a solid-state imaging device manufacturing method having a color filter, and a solid-state imaging device including a color filter.

  As a technique for forming a color filter array in a solid-state image pickup device, when using a dye-added positive color resist, the shape of the color filter after exposure and development processing is reduced with the miniaturization of pixels (unit cells) of the solid-state image pickup device. Maintenance is becoming difficult. Currently, the pixels of the solid-state imaging device are miniaturized to 2.5 μm square or less.

  Originally, dye dyes do not function as a resist function. Therefore, dye-added color resists containing about 20 to 70% of dye dye components have resist characteristics until the pixel size of the solid-state imaging device is about 2.5 μm square. In addition, the color filter characteristics can be achieved at the same time, but it is difficult to achieve both at a pixel size smaller than that.

  The deterioration of the shape of the color filter due to the occurrence of film loss or the like in the development processing suggests that it is difficult to achieve both color filter spectral characteristics and resist characteristics as the pattern size is further reduced. This is because the film-reducing component includes a dye pigment, so that when the film of the color filter is reduced, the spectral characteristics are affected.

  Thus, it is desired to establish a good color filter array forming technique even in a solid-state imaging device with fine pixels. As a method for forming a color filter array, there is a technique described in Patent Document 1.

The technique described in Patent Document 1 relates to the formation of a complementary color filter. In Patent Document 1, a color filter pattern is formed by dry etching using a color filter material containing no photosensitizer as the first color and using a photoresist as an etching mask. In the second and subsequent colors, a color resist pattern is formed by exposure and development using a color resist.
JP 2001-249218 A

  However, in the technique described in Patent Document 1, alignment errors in the exposure processes for the second color and the third color affect the pattern position accuracy of the color filter. For this reason, there is a problem that color mixing with adjacent pixels is caused particularly in a fine pixel whose solid-state imaging device has a pixel size of 2.5 μm square or less.

  The present invention has been made in view of the above circumstances, and a first object thereof is to provide a color filter manufacturing method capable of forming a color filter with high accuracy even when the size of the color filter is reduced. It is in.

  A second object of the present invention is to provide a method of manufacturing a solid-state imaging device that can form a color filter with high accuracy even when the pixel size is reduced and has excellent color reproducibility.

  A third object of the present invention is to provide a solid-state imaging device having a good color filter corresponding to a fine pixel and having excellent color reproducibility.

  In order to achieve the above object, a method for producing a color filter according to the present invention includes a step of forming a green color filter film on a substrate as a first color, and selectively etching the green color filter film using an etching mask. A step of forming a checkered green color filter, a step of forming a color filter film having photosensitivity for the second and subsequent colors on the substrate so as to cover the green color filter, and the color filter film A step of forming a color filter for the second and subsequent colors inside the region surrounded by the green color filter by exposure and development, and reflowing the color filters for the second and subsequent colors to surround the green color filter Filling the inside of the region with the color filter.

In the method for producing a color filter of the present invention, first, a checkered green color filter is formed by etching using an etching mask, and a photosensitive color filter film is exposed in the formation of the second and subsequent color filters. And after developing and patterning, the pattern of the color filter after the 2nd color is formed by reflow.
In the formation of the color filters for the second and subsequent colors, by performing a reflow process after patterning the color filter inside the area surrounded by the green color filter by exposure and development, without being affected by the alignment error of exposure, The second and subsequent color filters are formed in a region surrounded by the green color filter in a self-aligning manner.

  The above-described method for manufacturing a solid-state imaging device according to the present invention is a method for manufacturing a solid-state imaging device having a color filter on an upper layer of a substrate on which a light receiving portion is formed for each pixel. A step of forming a color filter film; a step of selectively etching the green color filter film using an etching mask to form a checkered green color filter; and the substrate so as to cover the green color filter Forming a color filter film having photosensitivity for the second and subsequent colors on the upper layer, exposing and developing the color filter film, and forming the second and subsequent colors on the inner side of the region surrounded by the green color filter A step of forming a color filter, and reflowing the color filters for the second and subsequent colors to form the green color filter. And a step of filling the the area having a data in the color filter.

In the manufacturing method of the solid-state imaging device of the present invention, first, a checkered green color filter is formed by etching using an etching mask, and a photosensitive color filter film is formed in the formation of the second and subsequent color filters. After patterning by exposure and development, a pattern of the second and subsequent color filters is formed by reflow.
In the formation of the color filters for the second and subsequent colors, by performing a reflow process after patterning the color filter inside the area surrounded by the green color filter by exposure and development, without being affected by the alignment error of exposure, The second and subsequent color filters are formed in a region surrounded by the green color filter in a self-aligning manner.

  In order to achieve the above object, a solid-state imaging device of the present invention includes a light-receiving unit formed on a substrate and constituting each pixel, and a color filter formed on an upper layer of the substrate and arranged corresponding to each pixel. And the color filter is arranged in a checkered pattern and includes a green color filter that does not include a photosensitive agent, and a second and subsequent colors that are disposed in a region surrounded by the checkered green color filter and that include the photosensitive agent. And a filter.

  In the above-described solid-state imaging device of the present invention, the green color filter is formed by etching using an etching mask and does not contain a photosensitive agent. Moreover, the pattern position after the 2nd color can be prescribed | regulated by arrange | positioning in a checkered pattern. The second and subsequent color filters are patterned by exposure and development, and contain a photosensitizer.

According to the color filter manufacturing method of the present invention, a color filter can be formed with high accuracy even when the size of the color filter is reduced.
According to the method for manufacturing a solid-state imaging device of the present invention, even when the pixel size is reduced, a color filter can be formed with high accuracy, and a solid-state imaging device excellent in color reproducibility can be manufactured.
According to the solid-state imaging device of the present invention, it is possible to realize a solid-state imaging device that includes a good color filter corresponding to a fine pixel and has excellent color reproducibility.

  Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, an example in which the present invention is applied to an interline transfer type CCD (Charge Coupled Device) type solid-state imaging device will be described. However, there is no particular limitation on the transfer method.

  FIG. 1 is a schematic configuration diagram of a solid-state imaging apparatus according to the present embodiment.

  The solid-state imaging device 1 according to the present embodiment includes an imaging unit 2, a horizontal transfer unit 3, and an output unit 4.

  The imaging unit 2 includes a plurality of light receiving units 5 arranged in a matrix for each pixel, a plurality of vertical transfer units 7 arranged for each vertical column of the light receiving unit 5, and the light receiving units 5 and the vertical transfer units 7. And a read gate portion 6 disposed between the two.

  The light receiving unit 5 includes, for example, a photodiode, and photoelectrically converts image light (incident light) incident from a subject into signal charges having a charge amount corresponding to the light amount and accumulates the signal light. The read gate unit 6 reads the signal charges accumulated in the light receiving unit 5 to the vertical transfer unit 7.

  The vertical transfer unit 7 is driven by four-phase clock signals φV1, φV2, φV3, and φV4, and transfers the signal charges read from the light receiving unit 5 in the vertical direction (downward in the figure). The clock signal is not limited to four phases.

  The horizontal transfer unit 3 is driven by the two-phase clock signals φH1 and φH2, and transfers the signal charges vertically transferred from the vertical transfer unit 7 in the horizontal direction (left direction in the figure).

  The vertical transfer unit 7 and the horizontal transfer unit 3 include a transfer channel formed in the transfer direction formed on the substrate, and a plurality of transfer electrodes formed side by side in the transfer direction with an insulating film interposed on the transfer channel. Have.

  The output unit 4 includes, for example, a charge-voltage conversion unit 4a configured by floating diffusion, converts the signal charge horizontally transferred by the horizontal transfer unit 3 into an electric signal, and outputs the signal as an analog image signal.

  FIG. 2 is a plan view of the main part of the imaging unit 2.

  A transfer channel region 13 extending in the transfer direction is formed adjacent to the light receiving portions 5 arranged in a matrix. On the transfer channel region 13, a plurality of transfer electrodes 21 and 22 are alternately and repeatedly arranged in the transfer direction with an insulating film interposed. The transfer channel region 13 and the transfer electrodes 21 and 22 constitute the vertical transfer unit 7. The transfer electrodes 21 and 22 arranged in the transfer direction are arranged so that the end portions overlap each other.

  The transfer electrodes 21 and 22 in the horizontal direction are connected to each other. The transfer electrode 21 is formed of a first polysilicon layer, and the transfer electrode 22 is formed of a second polysilicon layer. In this embodiment, an example of a transfer electrode having a two-layer structure will be described. However, a single-layer structure or a structure having three or more layers may be used.

  When a voltage is applied to the transfer electrodes 21 and 22, a potential well is formed in the transfer channel region 13. The clock signals φV1, V2, V3, and V4 for forming the potential well are applied to the transfer electrodes 21 and 22 arranged in the transfer direction with a phase shift, so that the distribution of the potential wells is sequentially increased. The charge in the potential well is transferred along the transfer direction.

  FIG. 3 is a plan view showing the arrangement of the color filters corresponding to the arrangement of the light receiving portions 5 in FIG.

  The color filter 30 includes a green color filter 31, a blue color filter 32, and a red color filter 33. The color filter 30 of the present embodiment is a primary color Bayer array color filter.

  In the primary color Bayer array, the green color filters 31 are arranged in a checkered pattern. A blue color filter 32 and a red color filter 33 are arranged in a region between the green color filters 31 arranged in a checkered pattern (a region where the green color filter 31 is not formed).

  In the present embodiment, in a region between the green color filters 31 arranged in a checkered pattern, the blue color filters 32 are arranged in all the specific columns, and the red color filter 33 is arranged in a column adjacent to the columns. Be placed. Thereby, a row in which the green color filter 31 and the blue color filter 32 are alternately and repeatedly arranged and a row in which the green color filter 31 and the red color filter 33 are alternately and repeatedly arranged are formed.

  FIG. 4 is a cross-sectional view of the main part centering on the pixel in which the green color filter 31 is arranged. In the primary color Bayer arrangement, only the blue color filter 32 or the red color filter 33 is arranged on the left and right sides of the green color filter 31, but in FIG. And a state in which the red color filter 33 is arranged.

  For example, a p-type well 11 is formed on an n-type silicon substrate (hereinafter referred to as substrate 10). The p-type well 11 forms an overflow barrier.

The light receiving unit 5 is configured by an n-type signal charge storage region 12 formed in the p-type well 11. Although not shown, a p ⁺ hole accumulation region for suppressing dark current is formed on the surface layer of the signal charge accumulation region 12.

  In the light receiving portion 5, an npn structure is formed by the signal charge accumulation region 12, the p-type well 11 and the substrate 10. This npn structure is a vertical overflow drain that discharges signal charges to the substrate 10 side when signal light generated excessively due to strong light incident on the light receiving section 5 exceeds an overflow barrier formed by the p-type well 11. Configure the structure.

  The vertical transfer unit 7 includes an n-type transfer channel region 13 formed in the p-type well 11 at a predetermined interval from the signal charge storage region 12, and a gate insulating film 20 made of a silicon oxide film on the transfer channel region 13. For example, the transfer electrodes 21 and 22 made of polysilicon are formed.

  The read gate unit 6 includes a p-type well (read gate region 14) between the signal charge storage region 12 and the transfer channel region 13, and a transfer electrode 21 formed on the read gate region 14 via a gate insulating film 20. , 22. The read gate region 14 forms a potential barrier between the n-type signal charge storage region 12 and the transfer channel region 13. At the time of reading, a positive read voltage is applied to the transfer electrode, the potential barrier of the read gate region 14 is lowered, and the signal charge is transferred from the signal charge accumulation region 12 to the transfer channel region 13.

  A p-type channel stop region 15 is formed on the side opposite to the reading side with respect to the signal charge storage region 12. The channel stop region 15 forms a potential barrier with respect to the signal charge and prevents the signal charge from flowing in and out.

  A light shielding film 24 that covers the transfer electrode 21 is formed on the transfer electrode 21 via an insulating film 23 made of, for example, silicon oxide. An opening for exposing the light receiving portion 5 is formed in the light shielding film 24.

  On the light shielding film 24, an interlayer insulating film 25 made of, for example, BPSG (Boro Phospho Silicate glass) is formed. In the interlayer insulating film 25, irregularities due to the surface step of the base are formed. On the interlayer insulating film 25, a planarizing film 26 made of, for example, silicon nitride is formed. The surface of the planarization film 26 is planarized. In this embodiment, an example in which an in-layer lens is formed by the interface between the interlayer insulating film 25 and the planarizing film 26 is shown, but the in-layer lens may not be formed.

  On the planarizing film 26, a color filter 30 including a green color filter 31, a blue color filter 32, and a red color filter 33 is formed. The material of each color filter will be described later.

  On the color filter 30, a planarizing film 34 made of, for example, an acrylic thermosetting resin is formed. An on-chip microlens 35 is formed on the planarizing film 34.

  In the solid-state imaging device described above, incident light is collected by the on-chip microlens 35 and reaches each color filter 31, 32, 33. Only light in a predetermined wavelength region passes through each color filter, is further condensed by an intralayer lens formed by the interface between the interlayer insulating film 25 and the planarizing film 26, and enters the light receiving unit 5. The light incident on the light receiving unit 5 is photoelectrically converted into a signal charge corresponding to the amount of incident light and accumulated in the signal charge accumulation region 12. Thereafter, the data is read out to the transfer channel region 13 and transferred in the vertical direction by the vertical transfer unit 7.

  Next, the manufacturing method of said solid-state imaging device is demonstrated with reference to FIGS.

  First, as shown in FIG. 5A, the layers up to the lower layer of the color filter 30 are formed. That is, the p-type well 11, the signal charge storage region 12, the transfer channel region 13, the read gate region 14, and the channel stop region 15 are formed on the substrate 10 by ion implantation. Subsequently, after forming the gate insulating film 20 on the substrate 10, transfer electrodes 21 and 22 are formed. In addition, after forming the transfer electrodes 21 and 22, the signal charge accumulation region 12 may be formed by ion implantation using the transfer electrode as a mask. Subsequently, a light shielding film 24 is formed on the transfer electrodes 21 and 22 via an insulating film 23. Subsequently, an interlayer insulating film 25 made of, for example, BPSG is formed on the light shielding film 24, and a planarizing film 26 made of silicon nitride is formed on the interlayer insulating film 25 by plasma CVD. By planarizing the planarizing film 26, the structure shown in FIG.

  Next, as shown in FIG. 5B, a green color filter film 31a is formed by applying a green color filter material by a predetermined thickness and thermally curing it. The heat treatment is set to a temperature lower than the temperature of the dye pigment and the resin due to heat, and a temperature range of about 150 ° C to 230 ° C is preferably used. By thermally curing the green color filter coating 31a, the flow of the green color filter coating 31a is prevented in the subsequent heat treatment.

  Examples of the composition of the green color filter material include a binder resin, a plurality of dye pigments for obtaining green transmission spectrum, a thermosetting agent, and a solvent. For example, a novolak resin is used as the binder resin, a melamine curing agent, a urea curing agent, or an epoxy curing agent is used as the thermosetting agent, and ethyl lactate and dimethylformamide are used as the solvent.

  Next, as shown in FIG. 6A, a photoresist is applied on the green color filter film 31a, and a resist pattern 36 is formed by a lithography technique. As a photoresist to be used, for example, THMR-ip3300 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used. In this step, it is preferable to set each heat treatment (pre-bake, post-bake, etc.) temperature to 120 ° C. or lower so that the solubility is not hindered when the resist pattern is dissolved and removed later with an organic solvent.

  Next, as shown in FIG. 6B, the pattern of the green color filter 31 is formed by dry etching the green color filter film 31a using the resist pattern 36 as an etching mask. The green color filter 31 is patterned in a checkered pattern (see FIG. 3). For dry etching, a gas mainly composed of oxygen is preferably used.

  Next, as shown in FIG. 7A, the unnecessary resist pattern 36 is dissolved and removed using an organic solvent. As the organic solvent, a single solvent or a mixed solvent such as EL, EEP, MMP, MAK, and PEGMA is used.

  Next, as shown in FIG. 7B, a green color filter 31 is coated and a photosensitive dye-added positive color resist is applied to the entire surface. The color resist at this time may be a red color resist or a blue color resist. For example, a blue color resist is used. Thereby, the blue color filter film 32a is formed. The film thickness of the blue color filter film 32a is adjusted so that a predetermined transmission spectrum is obtained after reflow described later.

  Examples of the composition of the blue color resist material include a binder resin, a plurality of dye pigments for obtaining a blue transmission spectrum, a thermosetting agent, a photosensitive agent, and a solvent. For example, a novolak resin is used as the binder resin, a melamine curing agent, a urea curing agent, or an epoxy curing agent is used as the thermosetting agent, naphthoquinone diazide is used as the photosensitizing agent, and ethyl lactate and dimethylformamide are used as the solvent.

  Next, as shown in FIG. 8A, the pattern of the blue color filter 32b is formed by exposing and developing the blue color filter film 32a by photolithography. The pattern of the blue color filter 32b after the development processing is formed so as to be inside the region surrounded by the green color filter 31. That is, the blue color filter 32 b is formed with a gap d from the green color filter 31. The distance d is 0.05 μm to 0.5 μm.

  The reason why the thickness is 0.05 μm or more is that since the alignment error of the current lithography technique is about 0.05 μm, if it is smaller than 0.05 μm, the color filters overlap each other due to the alignment error. The reason why the thickness is 0.5 μm or less is that the reflow characteristics of the color resist described later are taken into account, and if it is 0.5 μm or less, the gap can be satisfactorily filled by reflow.

  Next, as shown in FIG. 8B, thermal reflow processing is performed at a temperature higher than the thermal softening point of the blue color filter 32b. Due to the thermal flow of the blue color filter 32b, the blue color filter 32 that fills the region surrounded by the green color filter 31 is formed. The heat flow of the blue color filter stops at the boundary with the green color filter 31. As a result, the final pattern of the blue color filter 32 is formed in a self-aligning manner.

  Next, as shown in FIG. 9A, similar to the formation of the blue color filter 32, a photosensitive dye-added positive color resist is applied, exposed and developed, and subjected to thermal reflow. Thus, the red color filter 33 is formed in the region surrounded by the green color filter 31. Thus, the color filter 30 including the green color filter 31, the blue color filter 32, and the red color filter 33 is formed.

  Examples of the composition of the red color resist material include a binder resin, a plurality of dye pigments for obtaining red transmission spectrum, a thermosetting agent, a photosensitive agent, and a solvent. For example, a novolak resin is used as the binder resin, a melamine curing agent, a urea curing agent, or an epoxy curing agent is used as the thermosetting agent, naphthoquinone diazide is used as the photosensitizing agent, and ethyl lactate and dimethylformamide are used as the solvent.

  Next, as shown in FIG. 9B, a transparent planarizing film 34 is formed on the color filter 30 for the purpose of planarizing the surface irregularities of the color filter 30. As the planarization film 34, for example, an acrylic thermosetting resin is used.

  Next, as shown in FIG. 10A, a microlens material 35 a having photosensitivity is formed on the planarizing film 34. As the microlens material 35a, for example, a positive photoresist containing naphthoquinonediazide as a photosensitive agent is used.

  Next, as shown in FIG. 10B, the microlens material 35a is patterned by a photolithography technique, the remaining photosensitive agent (naphthoquinone diazide) in the film is decomposed by ultraviolet irradiation, and the transmittance in the short wavelength region is obtained. After performing the bleaching process to improve, the heat | fever more than the heat softening point of the micro lens material 35a is applied, and a micro lens shape is obtained. Thereby, the on-chip microlens 35 corresponding to each pixel is formed.

  As described above, the solid-state imaging device is completed.

  In the color filter manufacturing method according to the present embodiment, first, a checkered green color filter 31 is formed by etching using a resist pattern, and in forming the second or subsequent blue or red color filter, a photosensitive color is formed. After the filter film is exposed and developed and patterned, the second and subsequent color filter patterns are formed by thermal reflow.

  In the formation of blue or red color filters for the second and subsequent colors, a reflow process is performed after the color filter is formed inside the area surrounded by the green color filter 31 by exposure and development, thereby affecting the exposure alignment error. The second and subsequent color filters can be formed in a region surrounded by the green color filter 31 in a self-aligning manner without being received. As a result, the positional accuracy of the blue color filter 32 and the red color filter 33 for the second and subsequent colors can be improved.

  With the miniaturization of pixels, it has become difficult to achieve both filter performance and resist performance in color resists, but the pattern of the first color green color filter 31 is formed by etching using a resist. The pattern of the green color filter 31 can be formed with high accuracy without being affected by the above. Therefore, the green color filter material may not contain a photosensitizer.

  In the formation of the color filters for the second and subsequent colors, even if shape deterioration such as film reduction occurs after exposure and development, the film thickness can be made uniform by subsequent reflow processing. A red color filter 33 can be formed.

  The color resist material for forming the blue color filter 32 or the red color filter 33 is preferably a positive type. This is because when the negative type is used, the portion irradiated with light is cured, so that the reflow property (fluidity) in the subsequent heat treatment is lowered.

  The color resist material for forming the blue color filter 32 or the red color filter 33 is preferably a dye-added type rather than a pigment dispersion type. This is because, by using a dye in which pigment particles are dispersed at a molecular level rather than a pigment in which pigment particles are dispersed at a solid level, a rough image quality can be eliminated and a good image quality can be obtained. In addition, in the dye-added color resist, particularly, the deterioration of patterning property becomes a problem. Therefore, such a problem can be solved by the method of this embodiment.

  According to the method for manufacturing a solid-state imaging device for manufacturing a color filter as described above, a color filter can be formed with high accuracy even when the pixel size is reduced, and thus a solid-state imaging device with excellent color reproducibility is manufactured. can do.

  Further, according to the solid-state imaging device according to the present embodiment, it is possible to realize a solid-state imaging device that includes a good color filter corresponding to a fine pixel and has excellent color reproducibility.

  When a color filter is formed by a conventional color resist method, the end portions of the green color filter, the blue color filter, and the red color filter are overlapped in consideration of exposure alignment errors.

  On the other hand, in the solid-state imaging device according to this embodiment, the color filters 30, 32, and 33 do not overlap each other. By eliminating the overlap between the color filters 31, 32, and 33, it is possible to prevent color mixing with other pixels.

The present invention is not limited to the description of the above embodiment.
In this embodiment, the interline transfer type CCD solid-state image pickup device has been described. However, other transfer type CCD solid-state image pickup devices such as a frame interline transfer type may be used. Further, the present invention is not limited to the CCD solid-state imaging device, and can be applied to a CMOS solid-state imaging device.

Further, the blue color filter 32 and the red color filter may be arranged in any manner within the region surrounded by the green color filter 31 arranged in a checkered pattern. It is also possible to use a color filter other than the blue color filter or the red color filter.
In addition, various modifications can be made without departing from the scope of the present invention.

It is a schematic block diagram which shows an example of the solid-state imaging device concerning this embodiment. It is a principal part top view of an imaging part. It is a top view which shows arrangement | positioning of a color filter. It is principal part sectional drawing of an imaging part. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment. FIG. 10 is a process cross-sectional view illustrating a manufacturing process of a color filter in manufacturing a solid-state imaging device according to the present embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Solid-state imaging device, 2 ... Imaging part, 3 ... Horizontal transfer part, 4 ... Output part, 4a ... Charge-voltage conversion part, 5 ... Light-receiving part, 6 ... Read-out gate part, 7 ... Vertical transfer part, 10 ... Board | substrate 11 ... p-type well, 12 ... signal charge storage region, 13 ... transfer channel region, 14 ... read gate region, 15 ... channel stop region, 20 ... gate insulating film, 21 ... transfer electrode, 22 ... transfer electrode, 23 ... Insulating film, 24: Light shielding film, 25: Interlayer insulating film, 26: Planarizing film, 30: Color filter, 31: Green color filter, 31a: Green color filter film, 32, 32b: Blue color filter, 32a: Blue color Filter coating, 33 ... Red color filter, 33a ... Red color filter coating, 34 ... Flattening film, 35 ... On-chip microlens, 35a ... Microlene Wood, 36 ... resist pattern

Claims (7)

Forming a green color filter film on the substrate as the first color;
Selectively etching the green color filter film using an etching mask to form a checkered green color filter;
Forming a color filter film having photosensitivity for the second and subsequent colors on the substrate so as to cover the green color filter;
Exposing and developing the color filter film, and forming a color filter for the second and subsequent colors inside a region surrounded by the green color filter;
Reflowing the color filters for the second and subsequent colors, and filling the area surrounded by the green color filter with the color filter. The method for producing a color filter according to claim 1, wherein in the step of forming the color filter film for the second and subsequent colors, a dye-incorporated dye-added color filter film is formed. The method for producing a color filter according to claim 2, wherein in the step of forming the color filter film for the second and subsequent colors, a dye-added positive color filter film is formed. A method of manufacturing a solid-state imaging device having a color filter on an upper layer of a substrate on which a light receiving unit is formed for each pixel,
Forming a green color filter film as the first color on the upper layer of the substrate;
Selectively etching the green color filter film using an etching mask to form a checkered green color filter;
Forming a color filter film having photosensitivity for the second and subsequent colors on the upper layer of the substrate so as to cover the green color filter;
Exposing and developing the color filter film, and forming a color filter for the second and subsequent colors inside a region surrounded by the green color filter;
Reflowing the color filters for the second and subsequent colors, and filling the area surrounded by the green color filter with the color filter. 5. The method for manufacturing a solid-state imaging device according to claim 4, wherein in the step of forming a color filter film for the second and subsequent colors, a dye-added color filter film having photosensitivity is formed. The method for manufacturing a solid-state imaging device according to claim 5, wherein in the step of forming the color filter film for the second and subsequent colors, a dye-added positive color filter film is formed. A light receiving portion formed on the substrate and constituting each pixel;
A color filter formed on an upper layer of the substrate and disposed corresponding to each pixel;
The color filter is
A green color filter that is arranged in a checkered pattern and does not contain a photosensitizer,
A solid-state imaging device having a second and subsequent color filters including a photosensitizer disposed in a region surrounded by the checkered green color filter.

Images