JP2001249218A - Method of manufacturing color filter and method of manufacturing solid-state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a color filter layer thin in manufacturing the color filter. SOLUTION: A color filter component 40G with the first color is formed by selectively etching a color filter coating film 32 containing no photosensitive component and color filter components with the second and subsequent colors are formed by exposing and developing a color filter coating film containing a photosensitive component.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a color filter applied to, for example, a solid-state imaging device and the like, and a method of manufacturing a solid-state imaging device having a color filter.

[0002]

2. Description of the Related Art In recent years, in solid-state imaging devices, for example, CCD solid-state imaging devices, miniaturization and higher resolution have been advanced.
However, the miniaturization and high resolution of the CCD solid-state imaging device are reduced by reducing the area of the photodiode which is the light-receiving sensor unit by reducing the size of the unit cell including the light-receiving sensor unit and the transfer register. It is becoming one of the causes of lowering the photoelectric conversion characteristics (so-called light sensitivity), which is the main characteristic of the device.

[0003] In fact, the mainstream of optical sizes used in small consumer video cameras has shifted from the 1/3 inch type to the 1/4 inch type, and further studies have been made on the 1/6 inch type and beyond. . The number of pixels is 250,000, 360,000, 5
It extends to a range of 60,000 pixels. Even in such a reduction in the unit cell and the increase in the number of pixels, a technique that does not reduce the light sensitivity and the smear characteristic, which are the main characteristics of the CCD solid-state imaging device, is required.

FIG. 7 shows a sectional structure of a pixel portion of a CCD solid-state imaging device. In the CCD solid-state imaging device 1, a second conductivity type, that is, a p-type first semiconductor well region 3 serving as an overflow barrier region is formed on a semiconductor substrate 2 made of a first conductivity type, for example, an n-type silicon semiconductor. This first
In the p-type semiconductor well region 3, an n-type semiconductor region 5 and ap ⁺ positive charge accumulation region 6 on the n-type semiconductor region 5 for forming the light receiving sensor units 4 in a matrix arrangement are formed. The p ⁺ positive charge accumulation region 6 suppresses generation of dark current due to interface states.

At a position corresponding to one side of each light receiving sensor section row in the first p-type semiconductor well region 3, a read gate section 7 is provided.
, An n-type embedded transfer channel region 9 of the vertical transfer register 8 is formed. Under the buried transfer channel region 9, a second p-type semiconductor well region 10 is formed. Further, p that partitions each pixel including the light receiving sensor unit 4
A channel stop region 11 is formed.

A transfer electrode 14 made of, for example, polycrystalline silicon is formed on the buried transfer channel region 9, the channel stop region 11, and the read gate portion 7 via a gate insulating film 13, and the buried transfer channel region 9, the gate insulation The film 13 and the transfer electrode 14 constitute a vertical transfer register 8 having a CCD structure. A light-shielding film 16 made of, for example, Al is formed on the entire surface other than the opening of the light-receiving sensor unit 4 with an interlayer insulating film 15 covering the transfer electrode 14 interposed therebetween.

Further, a transparent flattening film 17, a color filter layer 18, and a flattening film 19 are formed.
A so-called on-chip microlens 20, which collects light incident on each light receiving sensor unit 4, is formed on the light receiving sensor unit 9. The transparent flattening film 17 is used to obtain stable color imaging characteristics.
This is a film for flattening the step of the base. Flattening film 19
Is a film for accurately forming the on-chip microlens 20 installed to obtain sufficient light sensitivity.

The color filter layer 18 is a color filter composed of complementary colors of yellow, cyan, magenta and green (where green is formed by superposing yellow and cyan) or a color filter composed of primary colors red, green and blue. Consists of a filter.

A conventional color filter is manufactured by, for example, a so-called color resist method in which a photoresist film containing a dye is selectively exposed to light and developed to form a filter component.

[0010]

In the CCD solid-state image pickup device, to obtain stable color image pickup characteristics and light sensitivity characteristics, a certain amount of film thickness of the flattening films 17, 19 and the color filter layer 18 is required. Was. As shown in FIG. 7, when the repetition pitch P of the pixel is sufficiently large, the parallel light L1 is naturally generated even if the thickness (height) H1 from the surface of the semiconductor substrate to the surface of the planarizing film 19 is large. The oblique light L2 having an incident angle .theta.
The decrease in light sensitivity of the solid-state imaging device is not significant. However, when the unit cell size (pixel size) is reduced as shown in FIG.
P), the parallel light L1 is taken into the light receiving sensor unit 4,
The oblique light L2 deviates from the light receiving sensor unit 4, resulting in a large decrease in sensitivity.

In order to solve this problem, as shown in FIG. 9, it is necessary to set the thickness H2 from the surface of the semiconductor substrate to the surface of the planarizing film 19 to be thin (so-called low).
In particular, when a color filter of a CCD solid-state imaging device is formed by a complementary color filter composed of yellow (Ye), cyan (Cy), magenta (Mg), and green (G), conventionally, a dyeing method or a photoresist is used. A method in which a dye is dissolved and mixed and a pattern is formed by a photolithography method (a so-called color resist method) has been adopted. In this case, yellow, cyan, and magenta could be formed by three-color patterning. However, the green filter component formed by superimposing cyan and yellow becomes a thick film, which is necessary for miniaturization of the solid-state imaging device described above. This causes a problem of lowering the sensitivity.

The green filter component formed by superimposing cyan and yellow has a slight variation in the thickness of each film (a variation in film formation by spin coating).
Deterioration of imaging characteristics called color unevenness was caused.
In this regard, as the miniaturization progresses, the problem becomes more serious. As described above, in order to prevent the deterioration of device characteristics due to the reduction in the size of the CCD solid-state imaging device, it has become essential to establish a technology for thinning the color filters.

The present invention has been made in view of the above circumstances, and provides a method of manufacturing a color filter which enables a color filter to be made thinner. The present invention provides a method of manufacturing a solid-state imaging device in which a color filter is made thinner and a pixel can be made finer.

[0014]

According to a method of manufacturing a color filter according to the present invention, a color filter film not containing a photosensitive material component is selectively etched to form a first color filter component, and a color filter containing a photosensitive material component is formed. The filter film is exposed and developed to form color filter components for the second and subsequent colors.

In the method of manufacturing a color filter of the present invention, the first color filter component is formed by selectively etching a color filter film containing no photosensitive material component. If the filter component is formed by this first color method,
The green filter component can be formed with a thin film thickness like the filter components of other colors. Therefore, the color filter can be made thinner.

A method for manufacturing a solid-state imaging device according to the present invention comprises:
The color filter film containing no photosensitive material component is selectively etched to form a first color filter component, and the color filter film containing the photosensitive material component is exposed and developed to form color filter components for the second and subsequent colors. Form a color filter.

In the method of manufacturing a solid-state imaging device according to the present invention, when forming a color filter, the first color filter component is formed by selectively etching a color filter film containing no photosensitive material component. When the green filter component is formed by the first color method, the green filter component can be formed with a thin film thickness in the same manner as the other color filter components. Therefore, even if the pixel size is reduced, the film thickness between the on-chip microlens and the light receiving sensor unit can be reduced, and oblique light is also taken into the light receiving sensor unit, thereby improving the sensitivity.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a method of manufacturing a color filter according to the present invention, a color filter film containing no photosensitive material component is selectively etched to form a first color filter component, and a color filter film containing a photosensitive material component is formed. Is exposed and developed to form color filter components for the second and subsequent colors, thereby producing a color filter.

In this method of manufacturing a color filter, a color filter film containing no photosensitive material component of the first color is dry-etched through a photoresist film mask, and then the photoresist film is removed to remove the first color filter. A component may be formed. In this method of manufacturing a color filter, the color filter film of the first color is selectively etched through a mask of a transparent photoresist film to form a color filter component of the first color. A component may be formed.

A method for manufacturing a solid-state imaging device according to the present invention comprises:
A method for manufacturing a solid-state imaging device having a color filter, wherein a color filter film not containing a photosensitive material component is selectively etched to form a first color filter component, and the color filter film containing a photosensitive material component is exposed and developed. do it,
A color filter is formed by forming color filter components for the second and subsequent colors.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the method of manufacturing a color filter according to the present embodiment, the first color filter component is formed by a so-called etching method, that is, a color resist film containing no photosensitive material component is selectively etched through a photoresist mask. Then, the color filter components for the second and subsequent colors are formed by a so-called photoresist method, that is, by exposing and developing a color resist film containing a photosensitive material component.

Here, as shown in the schematic diagram of FIG. 6A, after the color filter component formed by the photoresist method is subjected to a curing treatment such as heat, the dye 81, the photosensitive material 82,
Resin 83 and thermosetting material 84 remain. 85 is a substrate,
Reference numeral 86 denotes a color filter component, and T1 denotes a film thickness of the color filter component 86. The photosensitive material 82 is included in the resist for the purpose of imparting photosensitivity to exposure light such as ultraviolet light because the color filter component is formed by a photoresist method.

To reduce the thickness of the color filter, FIG.
Examples include an increase in the dye concentration in A, a reduction in the amount of resin, and a reduction in thermosetting material. However, it is necessary to determine an optimum composition in consideration of the reliability of the color filter and the like.

In the present embodiment, as shown in FIG.
The photosensitive material 82, which is originally required for forming a color filter component by a photoresist method, is removed from the composition.
When applied to a color filter component of a color, for example, a complementary color filter, a green filter component is formed. This makes it possible to reduce the filter film thickness T2 by ΔT from the filter film thickness T1 of FIG. 6A.

Next, a method of manufacturing a color filter according to the present embodiment when applied to a complementary color filter will be described in comparison with a conventional method.

First, a method of manufacturing a conventional color filter by a color resist method will be described with reference to FIGS. Table 1 below shows specific examples of the compositions of the yellow, cyan, and magenta color resists used in this example.

[0028]

[Table 1] Here, the pigment is magenta,
Select yellow or cyan. This color resist material is a so-called positive type color resist material in which an exposed portion is softened and dissolved and removed in a developing process.

[0029]

Embedded image

[0030]

Embedded image

[0031]

Embedded image

FIGS. 10A to 11F show examples of forming a green filter component. First, as shown in FIG. 10A, a yellow or cyan color resist film, in this example, a yellow color resist film 22 is formed on the transparent flattening film 17.
Is formed. As a film forming condition, baking treatment was performed at 100 ° C. for 120 seconds on a hot plate using a known spin coating method. The film thickness t1 is 1.0 μm after pre-baking.
m.

Next, as shown in FIG. 10B, the yellow color resist film 22 is selectively exposed 26 through a photomask 25. The exposure 26 was performed by i-line irradiation using a known reduction projection exposure apparatus. Exposure is 1500m
J / cm ² was set.

Next, as shown in FIG. 10C, after the exposed portion is dissolved and removed by a developing process, a baking and bleaching process is performed, and then a hardening process by a bake is performed to form a yellow filter component 18Ye. Development is TM
Perform paddle development with 2.38% aqueous solution of AH (tetramethyl hydroxide) for 60 sec, and wash with water for 60 sec.
c, and after drying by spin drying, baking treatment was performed at 100 ° C. for 120 seconds using a hot plate. The bleaching is performed at 1000 mJ / cm by the aforementioned i-ray irradiation.
^The entire surface of the color filter ² was exposed. The purpose is to reduce the visible light absorbing component of the photosensitive agent and improve the transparency of visible light. The curing bake was performed at 170 ° C. for 120 seconds using a hot plate.

Next, as shown in FIG. 10D, a cyan color resist film 23 is formed on the entire surface. Next, in the same manner as described above, the cyan color resist film 23 is selectively exposed 28 through the photomask 27 as shown in FIG.
Next, development processing is performed to form a cyan filter component 18Cy overlapping the yellow filter component 18Ye. The yellow filter component 18Ye and the cyan filter component 1
The green filter component 18G is formed by a two-layer film of 8Cy.

The thickness T3 of the green filter component 18G obtained by this method was 1.9 μm. Here, 2.
The reason why the thickness does not become 0 μm is as follows.
Shrinkage of the resin during thermosetting is exemplified.

Other cyan filter component, magenta filter component and yellow filter component of the color filter are respectively formed by forming a cyan color resist film, a magenta filter film and a yellow color resist film, and selectively exposed and developed in the same manner as described above. Formed. The yellow filter component 18Ye and the cyan filter component 18Cy
Are formed simultaneously with the formation of the yellow filter component 18Ye and the cyan filter component 18Cy that constitute the green filter component 18G. Thus, a complementary color filter is manufactured (see FIG. 10G).

Next, an embodiment of a method for manufacturing a color filter according to the present invention will be described with reference to FIGS. Table 2 shows specific examples of the composition of the green color resist used in the present embodiment. Specific examples of the compositions of the magenta, yellow, and cyan color resists are the same as those in Table 1 described above.

[0039]

[Table 2]

First, as shown in FIG. 1A, a first color filter film on a substrate (for example, a transparent flattening film when applied to a solid-state imaging device described later) 31, A green color resist film 32 is formed.
As a film forming condition, a known spin coating method was used, and a baking process was performed at 170 ° C. for 120 seconds on a hot plate. The film thickness was set to 1.33 μm after the baking treatment.

Next, as shown in FIG. 1B, a positive type photoresist film 33 is formed on the green color resist film 32. For example, HPR20ES-Z (23 cp) [trade name:
Fuji Film Ohlin Co., Ltd.]
The film thickness after the pre-baking treatment at 100 ° C. for 120 seconds was set to 1.8 μm.

Next, as shown in FIG. 1C, the positive photoresist film 33 is selectively exposed 35 through a photomask 34. The exposure 35 was performed by i-line irradiation using, for example, a known reduction projection exposure apparatus according to the above. The exposure amount was, for example, 400 mJ / cm.

Next, as shown in FIG. 2D, the exposed portion other than the portion where the green color filter component is to be formed by development processing is dissolved and removed, and then baking processing is performed. Thus, a photoresist mask 33G is formed at a predetermined position on the green color resist film 32, that is, on a portion where a green filter component is to be formed. Development was performed using a 2.38% aqueous solution of TMAH (tetramethyl hydroxide).
After performing paddle development for 0 sec, washing with water for 60 sec and spin-drying, 170 ° C.
A baking process was performed for 20 seconds.

Next, as shown in FIG. 2E, a green color resist film 32 is formed through a photoresist mask 33G.
Is selectively etched to obtain a green filter component 4
0G is formed. The etching was performed under the following conditions using a single-wafer microwave plasma etcher. Etching power: 500 W Oxygen gas flow rate: 200 SCCM Stage temperature: 120 ° C. Etching pressure: 135 Pa Etching time: 95 sec (corresponding to 20% overetch in terms of the etching rate of the green filter component) The remaining film is
0.22 μm.

Next, as shown in FIG. 2F, the photoresist mask 33G on the green filter component 40G is dissolved and removed by a solvent treatment. As the solvent treatment, a spin unit was used to dissolve and remove with methyl-3-methoxypropionate. The film thickness T4 of the green filter component 40G obtained by this etching method is 1.33 μm, which is 0.57 μm smaller than the film thickness T3 obtained by the conventional method (photoresist method). Becomes In other words, by removing the photosensitive agent in the color resist, 30
% Thinning is achieved.

The color filter components other than the green filter component 40G, in this example, the yellow, cyan, and magenta filter components, use a color resist having the composition shown in Table 1 and sequentially form a photoresist by the same process as the above-described conventional method. Formed at It should be noted that the process order of the yellow, cyan, and magenta filter components does not matter.

That is, as shown in FIG. 3G, a second color, for example, a yellow color filter film, in this example, a yellow color resist film (positive color resist) 34 is formed on the substrate 31. Next, the yellow color resist film 34 is selectively exposed 36 through a photomask 35.

Next, as shown in FIG. 3H, after the exposed portion is dissolved and removed by a developing process, a baking and bleaching process is performed, and then a hardening process is performed by baking to form a yellow filter component 40Ye.

Similarly, a third color, for example, a cyan color resist film is formed, selectively exposed through a photomask, and developed to form a cyan filter component 40Cy. Further, a fourth color, for example, a magenta color resist film is formed, selectively exposed through a photomask, and developed to form a magenta filter component 40Mg. In this way, as shown in FIG. 3I, the green filter component 4
A complementary color filter 40 including 0G, yellow filter component 40Ye, cyan filter component 40Cy, and magenta filter component 40Mg is obtained.

The color filter component 4 for the second and subsequent colors
The method of forming 0Ye, 40Cy, and 40Mg conforms to the conventional method (the so-called photoresist method) as described above, but the film thickness setting and exposure conditions are as shown in Table 3.

[0051]

[Table 3]

In the above-described embodiment, after the green resist film 32 is etched through the photoresist mask 33G to form the green filter component 40G, FIG.
Although the photoresist mask 33G is removed in the step F, as another embodiment, as shown in FIG.
This photoresist mask 33G can be left after the etching. For example, when applied to a solid-state imaging device, this photoresist mask 3
When 3G is left, after the etching in FIG. 4A, that is, after paddle development, washing with water, spin drying, and baking, a similar bleaching exposure is performed as described above with reference to FIG. 10C.

After the etching, the photoresist mask 33
When G is left, the green filter component 32 shown in FIG.
After the patterning process of G is completed, a process of forming a color filter component for the second and subsequent colors is performed, and a complementary color filter 40 is formed as shown in FIG. 4B.

The material limitation in the present invention is as follows. As the resin of the first color filter component,
Novolak resin, styrene resin, acrylic resin,
A polyimide-based resin and the like can be given. The concentration of the dye and the pigment in the material is not limited. The higher the concentration, the more advantageous for thinning.

When a photoresist mask is not left on the color filter component of the first color, a general-purpose positive photoresist (resist for i-line and g-line) is preferably used as the photoresist for the etching mask. When a photoresist mask is left on the color filter component of the first color, as a photoresist for an etching mask,
After the bleaching process, use a material having good transparency to visible light as much as possible. As exposure used for bleaching, ultraviolet rays, far ultraviolet rays, electron beams, and the like can be applied.

The etching conditions are not particularly limited, but RIE (reactive ion etch) or the like can be applied. As the stripping solvent after etching, EL,
A single or mixed solvent such as EEP, EP, MEK, and PEGMEA can be used.

For the second and subsequent color resists, a mixture of dyes in a positive type photoresist having good resolution is used. As the material, a resin obtained by adding a naphthoquinonediazide or the like as a photosensitive agent to a resin soluble in an alkaline aqueous solution such as a novolak resin, a polyhydroxystyrene resin, or an acrylic resin having a carboxylic acid group introduced therein can be suitably used. It can also be used for negative photoresists. The type and concentration of the coloring matter (pigment) are not particularly limited.
The higher the concentration, the more advantageous for thinning.

According to the color filter manufacturing method of the present embodiment, the first color, for example, the green filter component 40G in the complementary color filter 40 is formed by etching the green color resist film 32 containing no photosensitive material component. The filter components 40Ye, 40Cy, and 40Mg of yellow, cyan, and magenta for the second and subsequent colors are
By exposing and developing the color resist film 34 containing the photosensitive material component, a thin color filter can be manufactured.

The manufacturing method in which the transparent photoresist mask 33G is left on the green filter component 40G is suitable, for example, when applied to the manufacture of a color filter of a solid-state imaging device. In the solid-state imaging device, since the on-chip microlens is formed on the color filter via the transparent flattening film, there is no problem even if the transparent photoresist mask 33G itself is left, and the photoresist mask is not removed. The manufacturing process can be simplified.

In the above example, the present invention was applied to the manufacture of a complementary color filter composed of yellow, cyan, and magenta. However, the present invention was also applied to the manufacture of a color filter including a color filter component (first color filter component) by combining a plurality of colors. it can.

In the above example, after forming the green filter component 49G, the yellow, cyan, and magenta filter components 40Ye, 40Cy, and 40Mg are formed, but the order of formation is not limited. For example, the yellow, cyan, and magenta filter components 40Ye, 40Cy, and 40Mg may be formed first, and then the green filter component 49G may be formed.

The method for producing the color filter according to the present invention is as follows.
The present invention can be applied to the production of color filters for solid-state imaging devices such as CD type, MOS type, and others, and display devices such as liquid crystal display devices.

Next, an embodiment of a method of manufacturing a solid-state imaging device having a color filter will be described. This embodiment is a case where the present invention is applied to a CCD solid-state imaging device.

The solid-state imaging device 51 according to the present embodiment
As shown in FIG. 5, a second conductivity type, that is, a p-type first semiconductor well region 53 serving as an overflow barrier region is formed on a semiconductor substrate 52 made of a first conductivity type, for example, an n-type silicon semiconductor. In the first p-type semiconductor well region 53, an n-type semiconductor region 55 and ap ⁺ positive charge accumulation region 56 on the n-type semiconductor region 55 for forming the light receiving sensor portions 54 in a matrix arrangement are formed. This p ⁺ positive charge storage region 56
Is for suppressing the generation of dark current due to the interface state.

An n-type buried transfer channel region 59 of a vertical transfer register 58 is formed in the first p-type semiconductor well region 53 at a position corresponding to one side of each light-receiving sensor section row with the read gate section 57 interposed therebetween. . Under the buried transfer channel region 59, a second p-type semiconductor well region 60 is formed.
To form Further, a p-type channel stop region 61 that partitions each pixel including the light receiving sensor unit 54 is formed.

A transfer electrode 64 made of, for example, polycrystalline silicon is formed on the buried transfer channel region 59, the channel stop region 61, and the read gate portion 57 via a gate insulating film 63.
9. A vertical transfer register 58 having a CCD structure is constituted by the gate insulating film 63 and the transfer electrode 64. A light-shielding film 66 made of, for example, Al is formed on the entire surface other than the opening of the light-receiving sensor unit 54 via an interlayer insulating film 65 covering the transfer electrode 64.

Further, after forming the transparent flattening film 67,
A color filter, for example, a green filter component, is formed on the transparent flattening film 67 by the method described in the above embodiment.
A complementary color filter 40 including a yellow filter component, a cyan filter component, and a magenta filter component is formed.

Next, a flattening film 69 is formed on the complementary color filter 40, and a so-called on-chip microlens 70 for condensing light incident on each light receiving sensor unit 54 is formed on the flattening film 69. . The transparent flattening film 67 is
This is a film for flattening a step on a base in order to obtain stable color imaging characteristics. The flattening film 69 is an on-chip micro lens 70 installed to obtain sufficient light sensitivity.
Is a film for accurately forming a film. In this way,
A solid-state imaging device 51 having a color filter is manufactured.

According to the method of manufacturing the solid-state imaging device 51 according to the present embodiment, the thickness of the color filter 40 can be reduced, the light utilization of the device can be improved, and excellent image characteristics can be obtained. be able to. Therefore, CC
D Improvement of sensitivity corresponding to miniaturization of solid-state imaging device, uneven color,
Improvement of sensitivity unevenness can be achieved.

When the manufacturing method for leaving the photoresist mask 33G shown in FIG. 4 is applied to the production of the color filter of the solid-state imaging device, the photoresist mask 33G itself is transparent and the on-chip Transparent flattening film 6 which is a base film of microlens 70
9 to form a transparent photoresist mask 33G.
There is no problem if you leave. Photoresist mask 33G
If you use a manufacturing method that leaves a photoresist mask 3
Since the 3G removal step is eliminated, the manufacturing process can be simplified.

In the above example, the present invention is applied to the manufacture of a CCD solid-state imaging device. However, the present invention can also be applied to the manufacture of a solid-state imaging device having a color filter such as a MOS type or the like.

[0072]

According to the method for manufacturing a color filter according to the present invention, the thickness of each color filter component can be reduced, and the color filter can be made thinner. When applied to the formation of a color filter of a solid-state imaging device, it is possible to prevent deterioration of device characteristics due to a reduction in the size of the solid-state imaging device.

According to the method of manufacturing a solid-state imaging device according to the present invention, a color filter can be formed thin, so that the size of the solid-state imaging device can be reduced, and thus the sensitivity can be improved in accordance with miniaturization.
It is possible to improve color unevenness and sensitivity unevenness.

[Brief description of the drawings]

1A to 1C are production process diagrams (part 1) illustrating one embodiment of a method for producing a color filter according to the present invention.

FIGS. 2A to 2F are manufacturing process diagrams (part 2) showing one embodiment of a method for manufacturing a color filter according to the present invention.

FIGS. 3A to 3G are manufacturing process diagrams (part 3) illustrating one embodiment of the method for manufacturing a color filter according to the present invention. FIGS.

4A to 4B are manufacturing process diagrams showing another embodiment of the method for manufacturing a color filter according to the present invention.

FIG. 5 is a configuration diagram of a solid-state imaging device obtained by using the color filter manufacturing method according to the present invention.

FIG. 6 is a schematic diagram showing a composition of a filter component formed by a photoresist method. B is a schematic diagram showing the composition of a filter component formed by an etching method.

FIG. 7 is a configuration diagram showing an example of a conventional CCD solid-state imaging device having a color filter.

FIG. 8 is an explanatory diagram of a light receiving state when the color filter layer is thick when the unit cell size is reduced.

FIG. 9 is an explanatory diagram of a light receiving state when the thickness of the color filter layer is reduced when the unit cell size is reduced.

10A to 10D are manufacturing steps (1) of a conventional color filter manufacturing method.

11A to 11G are manufacturing steps (part 2) of a conventional method for manufacturing a color filter.

[Explanation of symbols]

31: Base, 32: Color resist film containing no photosensitive material component, 33: Photoresist film, 34, 3
5 Photomask, 35, 36 Exposure, 33G
... Photoresist mask, 34 ... Color resist film containing photosensitive material component, 40G ... Green filter component, 40Ye ... Yellow filter component, 40Cy
... Cyan filter component, 40Mg ... Magenta filter component, 40 ... Complementary color filter, 51 ...
・ Solid-state imaging device, 54: light receiving sensor unit, 58:
Vertical transfer register, 67 ... Transparent flattening film, 69 ...
-Flattening film, 70 ... On-chip micro lens.

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H048 BA02 BA11 BA16 BA17 BA25 BA29 BA54 BB02 BB13 BB47 2H096 AA28 AA30 BA09 CA05 HA15 HA30 4M118 AA10 AB01 BA10 BA14 CA04 DA03 EA01 FA06 FA13 FA35 GB11 GC09 GC17 GD04 5C065A DD EE07

Claims (4)

[Claims] 1. A color filter film containing no photosensitive material component is selectively etched to form a color filter component of a first color, and a color filter film containing a photosensitive material component is exposed and developed to form a second color and subsequent colors. A method for manufacturing a color filter, comprising forming a filter component. 2. A color filter film not containing the first color photosensitive material component is dry-etched through a photoresist film mask, and then the photoresist film is removed to form a first color filter component. The method for manufacturing a color filter according to claim 1, wherein: 3. The color filter film of the first color is selectively etched through a mask of a transparent photoresist film to form a color filter component of a first color. The method for manufacturing a color filter according to claim 1, wherein the color filter is formed. 4. A method for manufacturing a solid-state imaging device having a color filter, comprising: selectively etching a color filter film not containing a photosensitive material component to form a first color filter component; A method for manufacturing a solid-state imaging device, comprising exposing and developing a filter film to form a color filter by forming a color filter component for a second color and thereafter.