JP2006291319A - Plasma generator, and film deposition method using the same - Google Patents
Plasma generator, and film deposition method using the same Download PDFInfo
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- JP2006291319A JP2006291319A JP2005115560A JP2005115560A JP2006291319A JP 2006291319 A JP2006291319 A JP 2006291319A JP 2005115560 A JP2005115560 A JP 2005115560A JP 2005115560 A JP2005115560 A JP 2005115560A JP 2006291319 A JP2006291319 A JP 2006291319A
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- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- -1 methane or ethylene Chemical compound 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
Description
本発明は、プラズマ発生装置およびこれを用いた成膜方法に関する。 The present invention relates to a plasma generator and a film forming method using the same.
従来のプラズマ発生装置には、チャンバの外周にコイルを巻回し、このコイルに、高周波電源から電流を流すことによってチャンバ内にプラズマを発生させるものがある（特許文献１参照）。このようなプラズマ発生装置では、コイルに対して高周波電源からインピーダンス整合回路を介して高周波電力を供給する必要がある。そのため、このプラズマ発生装置を用いて長尺なワイヤ表面に成膜するにはインピーダンス整合回路を多数設置してコイルを延長してプラズマを長尺化することとなるが、そのためには、相当に大掛かりでコストがかかるプラズマ発生装置が必要となっていた。
本発明者は、インピーダンス整合回路を設置する必要なくコイルを延長してプラズマを長尺化することを可能にするべくこれまでの既存の概念にとらわれない新規なプラズマ発生装置を提供するべく鋭意研究を重ねた。 The present inventor has eagerly studied to provide a novel plasma generator that is not bound by the existing concept so that the plasma can be lengthened by extending the coil without the need for installing an impedance matching circuit. Repeated.
その研究の成果として、本発明者は、インピーダンス整合回路を設置する必要なくコイルを延長してプラズマを安定かつ長期にわたり長尺化状態で発生維持することが可能な発明を完成することができるに至った。 As a result of the research, the present inventor can complete an invention capable of generating and maintaining a plasma in a long and stable state for a long time by extending a coil without the necessity of installing an impedance matching circuit. It came.
すなわち、本発明に係るプラズマ発生装置は、減圧されかつプラズマ発生用ガス雰囲気下のチャンバ内に、周壁の一端側から他端側に１つないし複数の連続ないしは独立した開孔を有する導電性の筒状体を配置し、この筒状体の一端側に直流電源の負電位を印加すると共に前記筒状体外で前記チャンバ内の空間に前記直流電源の正電位と実質同電位を印加することを特徴とするものである。 That is, the plasma generating apparatus according to the present invention is a conductive material having one or a plurality of continuous or independent openings from one end side to the other end side of the peripheral wall in a decompressed chamber under a plasma generating gas atmosphere. A cylindrical body is disposed, and a negative potential of a DC power source is applied to one end side of the cylindrical body, and a substantially same potential as the positive potential of the DC power source is applied to the space inside the chamber outside the cylindrical body. It is a feature.
１つの連続した開孔を有する筒状体としては例えばコイルがある。また、複数の独立した開孔を有する筒状体としては例えば周壁を網目状とした筒状体がある。コイルは線間の隙間が螺旋形状である。筒状体の形状は該筒状体内の空間にプラズマ柱を閉じ込めた状態で発生させることができる形状であればよい。 An example of the cylindrical body having one continuous hole is a coil. Moreover, as a cylindrical body having a plurality of independent openings, for example, there is a cylindrical body having a meshed peripheral wall. The coil has a spiral space between the wires. The shape of the cylindrical body only needs to be a shape that can be generated in a state where the plasma column is confined in the space in the cylindrical body.
本発明のプラズマ発生方式は、既存の概念であるコイルの両端に高周波電力を印加してプラズマを発生させるという高周波プラズマ方式、コイルの両端に直流電源を接続する直流プラズマ方式とは異なって、コイル等の筒状体の一端側に直流電源の負電圧を印加し、筒状体の他端側には直流電源を接続せず当該コイルの他端側を例えばフローティング状態にするという構成により当該コイル内空間にプラズマ柱を発生させかつ閉じ込めることができるものである。 The plasma generation method of the present invention is different from the existing concept of a high frequency plasma method in which high frequency power is applied to both ends of a coil to generate plasma and a direct current plasma method in which a direct current power source is connected to both ends of the coil. The coil is configured so that a negative voltage of a DC power source is applied to one end side of the cylindrical body, and the other end side of the coil is in a floating state without connecting the DC power source to the other end side of the cylindrical body. A plasma column can be generated and confined in the inner space.
このような本発明に係るプラズマ発生装置では、コイルを延設してもその延長経路上にインピーダンス整合回路を設置する必要が何等ないので、コイルの延設がきわめて簡単であり、装置としては簡易かつ安価であることに加えて安定かつ長期にわたり任意に長尺化してプラズマ柱を発生させることができるプラズマ発生装置を提供することができる。 In such a plasma generator according to the present invention, there is no need to install an impedance matching circuit on the extension path even if the coil is extended, so that the extension of the coil is very simple and the apparatus is simple. In addition to being inexpensive, it is possible to provide a plasma generator that can generate a plasma column stably and for a long period of time by arbitrarily lengthening it.
本発明において特に注目すべきは、写真を参照しても明らかに実証されているように安定したプラズマ柱をコイルで囲む空間内に閉じ込めた状態で安定かつ長期にわたり維持発生させることができるものである。 Of particular note in the present invention is that a stable plasma column can be stably generated over a long period of time in a state of being confined in a space surrounded by a coil, as clearly shown by referring to the photograph. is there.
本発明においてさらに注目すべきは、その適用用途の一例を示せば、チャンバに成膜用ガス例えば炭素化合物系のガスを導入してワイヤ等の長尺な成膜対象の表面に炭素膜を成膜する場合、単にコイルをその成膜対象のサイズに合わせて延長し、そのコイル内部に成膜対象を配置するだけで成膜することができ、成膜費用を従来よりも大幅に低減することができる。 In the present invention, it should be noted that, as an example of its application, a film-forming gas such as a carbon compound gas is introduced into the chamber to form a carbon film on the surface of a long film-forming target such as a wire. When forming a film, the film can be formed simply by extending the coil according to the size of the film formation target and placing the film formation target inside the coil, thereby significantly reducing the film formation cost compared to the conventional method. Can do.
このワイヤの表面に多数の微細突起を有する炭素膜を形成した物を陰極とし、これと対向する陽極との間の電界印加により電子放出させ、この電子を蛍光体に衝突させて該蛍光体を励起発光することができる。本発明は、このようなワイヤ状の冷陰極電子源を長尺にして大型の冷陰極電子源を安価に製造する場合に特に有効に利用することができる。 An object formed by forming a carbon film having a large number of fine protrusions on the surface of the wire is used as a cathode, and electrons are emitted by applying an electric field between the cathode and the anode. Excitation light can be emitted. The present invention can be used particularly effectively when such a wire-like cold cathode electron source is elongated and a large-sized cold cathode electron source is manufactured at low cost.
本発明のプラズマ発生装置を用いて、プラズマＣＶＤ装置、プラズマエッチング装置、プラズマプレーティング装置等の各種プラズマ処理装置とすることができる。 By using the plasma generator of the present invention, various plasma processing apparatuses such as a plasma CVD apparatus, a plasma etching apparatus, and a plasma plating apparatus can be obtained.
すなわち、本発明のプラズマ発生装置においては、上記したように、ワイヤ等の成膜対象の表面に炭素膜を成膜するものであり、チャンバ内に成膜用ガスであるメタンやエチレン等の炭素化合物系のガスを導入することにより、成膜対象に成膜するプラズマＣＶＤ装置とすることができる。 That is, in the plasma generator of the present invention, as described above, a carbon film is formed on the surface of a film formation target such as a wire, and carbon such as methane or ethylene, which is a film forming gas, is formed in the chamber. By introducing a compound gas, a plasma CVD apparatus for forming a film on a film formation target can be obtained.
また、本発明のプラズマ発生装置においては、チャンバ内にエッチング用ガスを導入することにより、エッチング対象をエッチングするプラズマエッチング装置とすることができる。 Further, the plasma generator of the present invention can be a plasma etching apparatus that etches an etching target by introducing an etching gas into the chamber.
さらに、本発明のプラズマ発生装置においては、チャンバ内にプレーティング用ガスを導入することにより、プレーティング対象をプレーティングするプラズマプレーティング装置とすることができる。 Furthermore, the plasma generator of the present invention can be a plasma plating apparatus for plating an object to be plated by introducing a plating gas into the chamber.
本発明によれば、製造が簡易に済みかつ低廉な構成であるのに長尺なプラズマ柱を所定空間に安定して閉じ込めた状態で発生させることが可能な新規でかつ独創的、画期的なプラズマ発生装置を提供することができる。 According to the present invention, it is a novel and original and epoch-making capable of generating a long plasma column in a state where it is stably confined in a predetermined space even though the manufacturing is simple and inexpensive. A plasma generating apparatus can be provided.
以下、添付した図面を参照して、本発明の実施の形態に係るプラズマ発生装置を説明すると、このプラズマ発生装置１０は、ＳＵＳ等の金属製の円筒形チャンバ１２を備える。この金属製の意味は、チャンバ１２それ自体が金属製であってもよいが、チャンバ１２の外周壁面を安全性の観点から絶縁材料で被覆した構成として内周壁面を金属製としたものを含むことができる。チャンバ１２の金属材料には特に限定されない。 Hereinafter, a plasma generator according to an embodiment of the present invention will be described with reference to the accompanying drawings. The plasma generator 10 includes a cylindrical chamber 12 made of metal such as SUS. The meaning of the metal includes that the chamber 12 itself may be made of metal, but the outer peripheral wall surface of the chamber 12 is covered with an insulating material from the viewpoint of safety, and the inner peripheral wall surface is made of metal. be able to. The metal material for the chamber 12 is not particularly limited.
チャンバ１２は接地されている。チャンバ１２にはガス導入口１４とガス排出口１６とが設けられている。プラズマ発生用ガスは活性ガス、不活性ガスでよく、活性ガスとしては例えば水素ガスがあり、不活性ガスとしては例えばアルゴンガスがある。チャンバ内圧力は１０Ｐａから１００００Ｐａの範囲の圧力でよく、この範囲で適宜に設定することができる。 The chamber 12 is grounded. The chamber 12 is provided with a gas inlet 14 and a gas outlet 16. The plasma generating gas may be an active gas or an inert gas. The active gas is, for example, hydrogen gas, and the inert gas is, for example, argon gas. The pressure in the chamber may be in the range of 10 Pa to 10000 Pa, and can be appropriately set within this range.
チャンバ１２の内部には金属製のコイル１８が配設されている。このコイル１８の材料には特に限定されないが、例えばＳＵＳがある。 A metal coil 18 is disposed inside the chamber 12. The material of the coil 18 is not particularly limited, but there is, for example, SUS.
コイル１８の一端側は直流電源２０の負極に接続されて負電位が印加されている。直流電源２０の正極は接地されている。これにより、チャンバ１２内空間は直流電源２０の正電位と同電位となっている。コイル１８の他端側はフローティングされている。コイル１８の他端側はフローティングする必要は必ずしもなく、コイル１８の他端側はその一端側に接続されてもよい。コイル１８の線径には特に限定されないが、例えば２ｍｍから２５ｍｍである。コイル１８の線間間隔には特に限定されないが、例えば２ｍｍから２０ｍｍである。これら線径、線間間隔は実験等により適宜に決定することができる。本発明者の実験では上記範囲で程度に相違はあるものの、いずれも実施することができた。 One end of the coil 18 is connected to the negative electrode of the DC power supply 20 and is applied with a negative potential. The positive electrode of the DC power supply 20 is grounded. Thereby, the space in the chamber 12 is at the same potential as the positive potential of the DC power supply 20. The other end side of the coil 18 is floating. The other end side of the coil 18 does not necessarily need to float, and the other end side of the coil 18 may be connected to one end side thereof. The wire diameter of the coil 18 is not particularly limited, but is, for example, 2 mm to 25 mm. The distance between the coils 18 is not particularly limited, and is, for example, 2 mm to 20 mm. These wire diameters and spacings between the wires can be appropriately determined by experiments or the like. In the experiment of the present inventor, although there was a difference in the above range, any of them could be carried out.
コイル１８は、螺旋状の開孔を有する周壁に囲まれてなる導電性の筒状体であると言い換えることができる。この開孔はコイル１８が螺旋形状であるためにコイル１８の一端側から他端側にかけて連続した孔形状となっている。図示しないが、コイル１８に代えて、網目状の開孔を有する周壁に囲まれてなる導電性の筒状体でもよい。網目の太さや粗さは適宜実験等により決定することができる。 In other words, the coil 18 is a conductive cylindrical body surrounded by a peripheral wall having a spiral opening. Since the coil 18 has a spiral shape, the opening has a continuous hole shape from one end side to the other end side of the coil 18. Although not shown, instead of the coil 18, a conductive cylindrical body surrounded by a peripheral wall having a mesh-like opening may be used. The thickness and roughness of the mesh can be appropriately determined by experiments or the like.
直流電源２０は好ましくは電圧可変型である。直流電源２０の電圧は１００Ｖから２０００Ｖの電圧範囲である。直流電源２０の電圧は適宜に実験等により決定することができる。 The DC power supply 20 is preferably a variable voltage type. The voltage of the DC power supply 20 is in the voltage range of 100V to 2000V. The voltage of the DC power supply 20 can be appropriately determined by experiments or the like.
以上の構成を備えたプラズマ発生装置１０において、チャンバ１２内を減圧しかつガス導入口１４からプラズマ発生用ガスとして水素ガスを導入し、直流電源２０の負電位をコイル１８に印加すると、コイル１８の内部空間にプラズマ柱２４が発生する。 In the plasma generating apparatus 10 having the above configuration, when the inside of the chamber 12 is depressurized and hydrogen gas is introduced as a plasma generating gas from the gas introduction port 14, and the negative potential of the DC power supply 20 is applied to the coil 18, the coil 18. A plasma column 24 is generated in the internal space.
図２は、本発明者が製造し実験室内に配置してある本実施の形態に対応したプラズマ発生装置１０によりコイル１８の内部空間にプラズマ２４が発生している様子を示す写真である。図２（a）の写真は、直流電源２０の負電圧７００Ｖ、メタン／水素ガス、圧力８０Ｐａのものであり、図２（b）の写真は、直流電源２０の負電圧７００Ｖ、メタン／水素ガス、圧力１７０Ｐａのものである。コイル１８の材料はＳＵＳである。写真内には符号をとれないが、コイル１８とワイヤ２２とプラズマ柱２４とが明瞭に撮影されている。 FIG. 2 is a photograph showing a state in which the plasma 24 is generated in the internal space of the coil 18 by the plasma generator 10 corresponding to the present embodiment manufactured by the present inventor and disposed in the laboratory. The photograph in FIG. 2 (a) is for a DC power supply 20 having a negative voltage of 700V, methane / hydrogen gas, and a pressure of 80Pa, and the photograph in FIG. 2 (b) is the DC power supply 20 having a negative voltage of 700V, methane / hydrogen gas. The pressure is 170 Pa. The material of the coil 18 is SUS. Although a code cannot be taken in the photograph, the coil 18, the wire 22, and the plasma column 24 are clearly photographed.
このプラズマ発生装置１０を用いてワイヤ等の長尺物である成膜対象に成膜する方法を説明すると、コイル１８の内部に導電性のワイヤ２２を配置する。ワイヤ２２の両端を交流電源２３を接続し、ワイヤ２２を加熱する。ガス導入口１４からプラズマ発生用ガスとして水素ガスと、ワイヤ２２の表面に対する炭素膜成膜用ガスとしてメタンガスとを導入する。そして、チャンバ内圧を減圧し、直流電源２０の負電位をコイル１８に印加したとき、コイル１８の内部空間にプラズマ柱２４が発生し、これにより、メタンガスが分解され、ワイヤ２２の表面に炭素膜が成膜される。なお、図２の写真ではコイル１８の内部空間にワイヤ２２が配置されており、このワイヤ２２の表面に炭素膜を成膜することができた。 A method of forming a film on an object to be formed which is a long object such as a wire using the plasma generator 10 will be described. The conductive wire 22 is disposed inside the coil 18. An AC power supply 23 is connected to both ends of the wire 22 to heat the wire 22. Hydrogen gas as plasma generating gas and methane gas as carbon film forming gas for the surface of the wire 22 are introduced from the gas inlet 14. When the chamber internal pressure is reduced and the negative potential of the DC power supply 20 is applied to the coil 18, a plasma column 24 is generated in the internal space of the coil 18, whereby methane gas is decomposed and a carbon film is formed on the surface of the wire 22. Is deposited. In the photograph of FIG. 2, the wire 22 is disposed in the internal space of the coil 18, and a carbon film can be formed on the surface of the wire 22.
図３は、本発明の他の実施の形態に係るプラズマ発生装置１０の構成を示す図であり、図３で示すプラズマ発生装置１０が、図１で示すプラズマ発生装置１０と相違するのは、直流電源２０の正極がチャンバ１２内部に臨設されていることである。図３に示すプラズマ発生装置１０においても、コイル１２の内部空間にプラズマ柱２４が発生する。 FIG. 3 is a diagram showing a configuration of a plasma generator 10 according to another embodiment of the present invention. The plasma generator 10 shown in FIG. 3 is different from the plasma generator 10 shown in FIG. That is, the positive electrode of the DC power supply 20 is provided inside the chamber 12. Also in the plasma generator 10 shown in FIG. 3, the plasma column 24 is generated in the internal space of the coil 12.
１０ プラズマ発生装置
１２ チャンバ
１４ ガス導入口
１６ ガス排出口
１８ コイル
２０ 直流電源
２２ ワイヤ
２４ プラズマ柱
DESCRIPTION OF SYMBOLS 10 Plasma generator 12 Chamber 14 Gas inlet 16 Gas outlet 18 Coil 20 DC power supply 22 Wire 24 Plasma column
Claims (9)
請求項１または２に記載のプラズマ発生装置における前記筒状体内の空間に導電性ワイヤを配置し、前記チャンバ内を減圧しかつ当該チャンバ内にプラズマ発生用ガスと成膜用ガスとを導入し、前記筒状体の一端側に直流電源の負極側電位を印加して前記筒状体内の空間にプラズマ柱を発生させて導電性ワイヤの表面に成膜をする、ことを特徴とする成膜方法。 In a film forming method for forming a film on the surface of a conductive wire,
3. The plasma generator according to claim 1, wherein a conductive wire is disposed in a space in the cylindrical body, the inside of the chamber is decompressed, and a plasma generating gas and a film forming gas are introduced into the chamber. And forming a film on the surface of the conductive wire by applying a negative side potential of a direct current power source to one end of the cylindrical body to generate a plasma column in the space in the cylindrical body. Method.
請求項３ないし６のいずれかに記載のプラズマ発生装置における前記コイル内の空間に導電性ワイヤを配置し、前記チャンバ内を減圧しかつ当該チャンバ内にプラズマ発生用ガスと成膜用ガスとを導入し、前記コイルの一端側に直流電源の負極側電位を印加して前記コイル内の空間にプラズマ柱を発生させて導電性ワイヤの表面に成膜をする、ことを特徴とする成膜方法。 In a film forming method for forming a film on the surface of a conductive wire,
7. The plasma generator according to claim 3, wherein a conductive wire is disposed in the space in the coil, the inside of the chamber is decompressed, and a plasma generating gas and a film forming gas are placed in the chamber. And forming a film on the surface of the conductive wire by applying a negative potential of a DC power source to one end of the coil to generate a plasma column in the space in the coil. .
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005115560A JP4925600B2 (en) | 2005-04-13 | 2005-04-13 | Plasma generator and film forming method using the same |
| EP05793094A EP1834925A1 (en) | 2005-01-05 | 2005-10-13 | Apparatus for manufacturing carbon film by plasma cvd, method for manufacturing the same, and carbon film |
| KR1020127023664A KR101342356B1 (en) | 2005-01-05 | 2005-10-13 | Method for producing carbon film using plasma cvd and carbon film |
| KR1020057023130A KR101313919B1 (en) | 2005-01-05 | 2005-10-13 | Apparatus and method for producing carbon film using plasma cvd and carbon film |
| CN2005800003526A CN1906127B (en) | 2005-01-05 | 2005-10-13 | Apparatus for manufacturing carbon film by plasma CVD, method for manufacturing the same, and carbon film |
| PCT/JP2005/018894 WO2006073017A1 (en) | 2005-01-05 | 2005-10-13 | Apparatus for manufacturing carbon film by plasma cvd, method for manufacturing the same, and carbon film |
| US10/558,874 US8808856B2 (en) | 2005-01-05 | 2005-10-13 | Apparatus and method for producing carbon film using plasma CVD and carbon film |
| TW094138909A TW200630505A (en) | 2005-01-05 | 2005-11-04 | Apparatus for producing carbon film and production method therefor |
| TW094138909K TWI403611B (en) | 2005-01-05 | 2005-11-04 | An apparatus for manufacturing a carbon film using plasma CVD, a method for manufacturing the same, and a carbon film |
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| JP2005115560A JP4925600B2 (en) | 2005-04-13 | 2005-04-13 | Plasma generator and film forming method using the same |
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| JP4925600B2 JP4925600B2 (en) | 2012-04-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008007798A (en) * | 2006-06-27 | 2008-01-17 | Dialight Japan Co Ltd | Plasma-generating device |
| JP2008144249A (en) * | 2006-12-13 | 2008-06-26 | Dialight Japan Co Ltd | Film-forming apparatus, and method for preventing overdischarge from occurring in tubular cathode used in the film-forming apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868958A (en) * | 1981-10-21 | 1983-04-25 | Toshiba Corp | Lead frame |
| JPH0978242A (en) * | 1995-09-14 | 1997-03-25 | Sony Corp | Plasma cvd device |
| JPH09204832A (en) * | 1996-01-29 | 1997-08-05 | Yazaki Corp | Manufacture of composite covered electric wire |
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- 2005-04-13 JP JP2005115560A patent/JP4925600B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868958A (en) * | 1981-10-21 | 1983-04-25 | Toshiba Corp | Lead frame |
| JPH0978242A (en) * | 1995-09-14 | 1997-03-25 | Sony Corp | Plasma cvd device |
| JPH09204832A (en) * | 1996-01-29 | 1997-08-05 | Yazaki Corp | Manufacture of composite covered electric wire |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008007798A (en) * | 2006-06-27 | 2008-01-17 | Dialight Japan Co Ltd | Plasma-generating device |
| JP2008144249A (en) * | 2006-12-13 | 2008-06-26 | Dialight Japan Co Ltd | Film-forming apparatus, and method for preventing overdischarge from occurring in tubular cathode used in the film-forming apparatus |
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| JP4925600B2 (en) | 2012-04-25 |
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