JP4925600B2 - Plasma generator and film forming method using the same - Google Patents

Plasma generator and film forming method using the same Download PDF

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JP4925600B2
JP4925600B2 JP2005115560A JP2005115560A JP4925600B2 JP 4925600 B2 JP4925600 B2 JP 4925600B2 JP 2005115560 A JP2005115560 A JP 2005115560A JP 2005115560 A JP2005115560 A JP 2005115560A JP 4925600 B2 JP4925600 B2 JP 4925600B2
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coil
plasma
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gas
power supply
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JP2006291319A (en
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方紀 羽場
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Life Technology Research Institute Inc
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Priority to CN2005800003526A priority patent/CN1906127B/en
Priority to US10/558,874 priority patent/US8808856B2/en
Priority to KR1020057023130A priority patent/KR101313919B1/en
Priority to KR1020127023664A priority patent/KR101342356B1/en
Priority to EP05793094A priority patent/EP1834925A1/en
Priority to PCT/JP2005/018894 priority patent/WO2006073017A1/en
Priority to TW094138909K priority patent/TWI403611B/en
Priority to TW094138909A priority patent/TW200630505A/en
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Description

本発明は、プラズマ発生装置およびこれを用いた成膜方法に関する。   The present invention relates to a plasma generator and a film forming method using the same.

従来のプラズマ発生装置には、チャンバの外周にコイルを巻回し、このコイルに、高周波電源から電流を流すことによってチャンバ内にプラズマを発生させるものがある(特許文献1参照)。このようなプラズマ発生装置では、コイルに対して高周波電源からインピーダンス整合回路を介して高周波電力を供給する必要がある。そのため、このプラズマ発生装置を用いて長尺なワイヤ表面に成膜するにはインピーダンス整合回路を多数設置してコイルを延長してプラズマを長尺化することとなるが、そのためには、相当に大掛かりでコストがかかるプラズマ発生装置が必要となっていた。
特開2004−216246号公報
In the conventional plasma generator, a coil is wound around the outer periphery of a chamber, and a current is supplied to the coil from a high frequency power source to generate plasma in the chamber (see Patent Document 1). In such a plasma generator, it is necessary to supply high frequency power from a high frequency power source to the coil via an impedance matching circuit. Therefore, in order to form a film on the surface of a long wire using this plasma generator, it is necessary to install a large number of impedance matching circuits and extend the coil to lengthen the plasma. A large-scale and costly plasma generator is required.
JP 2004-216246 A

本発明者は、インピーダンス整合回路を設置する必要なくコイルを延長してプラズマを長尺化することを可能にするべくこれまでの既存の概念にとらわれない新規なプラズマ発生装置を提供するべく鋭意研究を重ねた。   The present inventor has eagerly studied to provide a novel plasma generator that is not bound by the existing concept so as to make it possible to lengthen the plasma by extending the coil without the need to install an impedance matching circuit. Repeated.

その研究の成果として、本発明者は、インピーダンス整合回路を設置する必要なくコイルを延長してプラズマを安定かつ長期にわたり長尺化状態で発生維持することが可能な発明を完成することができるに至った。   As a result of the research, the present inventor can complete an invention capable of generating and maintaining a plasma in a long and stable state for a long time by extending a coil without the necessity of installing an impedance matching circuit. It came.

すなわち、本発明に係るプラズマ発生装置は、減圧されかつプラズマ発生用ガス雰囲気下のチャンバ内に、周壁の一端側から他端側に1つないし複数の連続ないしは独立した開孔を有する導電性の筒状体を配置し、この筒状体の一端側に直流電源の負電位を印加すると共に前記筒状体外で前記チャンバ内の空間に前記直流電源の正電位と実質同電位を印加することを特徴とするものである。   That is, the plasma generating apparatus according to the present invention is a conductive material having one or a plurality of continuous or independent openings from one end side to the other end side of the peripheral wall in a decompressed chamber under a plasma generating gas atmosphere. A cylindrical body is disposed, and a negative potential of a DC power source is applied to one end side of the cylindrical body, and a substantially same potential as the positive potential of the DC power source is applied to the space inside the chamber outside the cylindrical body. It is a feature.

1つの連続した開孔を有する筒状体としては例えばコイルがある。また、複数の独立した開孔を有する筒状体としては例えば周壁を網目状とした筒状体がある。コイルは線間の隙間が螺旋形状である。筒状体の形状は該筒状体内の空間にプラズマ柱を閉じ込めた状態で発生させることができる形状であればよい。   An example of the cylindrical body having one continuous hole is a coil. Moreover, as a cylindrical body having a plurality of independent openings, for example, there is a cylindrical body having a meshed peripheral wall. The coil has a spiral space between the wires. The shape of the cylindrical body may be any shape that can be generated in a state in which the plasma column is confined in the space in the cylindrical body.

本発明のプラズマ発生方式は、既存の概念であるコイルの両端に高周波電力を印加してプラズマを発生させるという高周波プラズマ方式、コイルの両端に直流電源を接続する直流プラズマ方式とは異なって、コイル等の筒状体の一端側に直流電源の負電圧を印加し、筒状体の他端側には直流電源を接続せず当該コイルの他端側を例えばフローティング状態にするという構成により当該コイル内空間にプラズマ柱を発生させかつ閉じ込めることができるものである。   The plasma generation method of the present invention is different from the existing concept of a high frequency plasma method in which high frequency power is applied to both ends of a coil to generate plasma and a direct current plasma method in which a direct current power source is connected to both ends of the coil. The coil is configured so that a negative voltage of a DC power source is applied to one end side of the cylindrical body, and the other end side of the coil is in a floating state without connecting the DC power source to the other end side of the cylindrical body. A plasma column can be generated and confined in the inner space.

このような本発明に係るプラズマ発生装置では、コイルを延設してもその延長経路上にインピーダンス整合回路を設置する必要が何等ないので、コイルの延設がきわめて簡単であり、装置としては簡易かつ安価であることに加えて安定かつ長期にわたり任意に長尺化してプラズマ柱を発生させることができるプラズマ発生装置を提供することができる。   In such a plasma generator according to the present invention, there is no need to install an impedance matching circuit on the extension path even if the coil is extended, so that the extension of the coil is very simple and the apparatus is simple. In addition to being inexpensive, it is possible to provide a plasma generating apparatus that can generate a plasma column stably and for a long period of time by arbitrarily lengthening it.

本発明において特に注目すべきは、写真を参照しても明らかに実証されているように安定したプラズマ柱をコイルで囲む空間内に閉じ込めた状態で安定かつ長期にわたり維持発生させることができるものである。   Particularly noteworthy in the present invention is that a stable plasma column can be stably generated over a long period of time in a state of being confined in a space surrounded by a coil, as clearly demonstrated with reference to the photograph. is there.

本発明においてさらに注目すべきは、その適用用途の一例を示せば、チャンバに成膜用ガス例えば炭素化合物系のガスを導入してワイヤ等の長尺な成膜対象の表面に炭素膜を成膜する場合、単にコイルをその成膜対象のサイズに合わせて延長し、そのコイル内部に成膜対象を配置するだけで成膜することができ、成膜費用を従来よりも大幅に低減することができる。   In the present invention, it should be further noted that, as an example of its application, a film-forming gas such as a carbon compound gas is introduced into the chamber to form a carbon film on the surface of a long film-forming target such as a wire. When forming a film, the film can be formed simply by extending the coil according to the size of the film formation target and placing the film formation target inside the coil, thereby significantly reducing the film formation cost compared to the conventional method. Can do.

このワイヤの表面に多数の微細突起を有する炭素膜を形成した物を陰極とし、これと対向する陽極との間の電界印加により電子放出させ、この電子を蛍光体に衝突させて該蛍光体を励起発光することができる。本発明は、このようなワイヤ状の冷陰極電子源を長尺にして大型の冷陰極電子源を安価に製造する場合に特に有効に利用することができる。   An object formed by forming a carbon film having a large number of fine protrusions on the surface of the wire is used as a cathode, and electrons are emitted by applying an electric field between the cathode and the anode. Excitation light can be emitted. The present invention can be used particularly effectively when such a wire-like cold cathode electron source is elongated and a large-sized cold cathode electron source is manufactured at low cost.

本発明のプラズマ発生装置を用いて、プラズマCVD装置、プラズマエッチング装置、プラズマプレーティング装置等の各種プラズマ処理装置とすることができる。   By using the plasma generator of the present invention, various plasma processing apparatuses such as a plasma CVD apparatus, a plasma etching apparatus, and a plasma plating apparatus can be obtained.

すなわち、本発明のプラズマ発生装置においては、上記したように、ワイヤ等の成膜対象の表面に炭素膜を成膜するものであり、チャンバ内に成膜用ガスであるメタンやエチレン等の炭素化合物系のガスを導入することにより、成膜対象に成膜するプラズマCVD装置とすることができる。   That is, in the plasma generator of the present invention, as described above, a carbon film is formed on the surface of a film to be formed, such as a wire, and carbon such as methane or ethylene, which is a film forming gas, is formed in the chamber. By introducing a compound-based gas, a plasma CVD apparatus for forming a film on a film formation target can be obtained.

また、本発明のプラズマ発生装置においては、チャンバ内にエッチング用ガスを導入することにより、エッチング対象をエッチングするプラズマエッチング装置とすることができる。   Further, the plasma generator of the present invention can be a plasma etching apparatus that etches an object to be etched by introducing an etching gas into the chamber.

さらに、本発明のプラズマ発生装置においては、チャンバ内にプレーティング用ガスを導入することにより、プレーティング対象をプレーティングするプラズマプレーティング装置とすることができる。   Furthermore, the plasma generating apparatus of the present invention can be a plasma plating apparatus for plating an object to be plated by introducing a plating gas into the chamber.

本発明によれば、製造が簡易に済みかつ低廉な構成であるのに長尺なプラズマ柱を所定空間に安定して閉じ込めた状態で発生させることが可能な新規でかつ独創的、画期的なプラズマ発生装置を提供することができる。   According to the present invention, it is a novel and original and epoch-making capable of generating a long plasma column in a state where it is stably confined in a predetermined space even though the manufacturing is simple and inexpensive. A plasma generating apparatus can be provided.

以下、添付した図面を参照して、本発明の実施の形態に係るプラズマ発生装置を説明すると、このプラズマ発生装置10は、SUS等の金属製の円筒形チャンバ12を備える。この金属製の意味は、チャンバ12それ自体が金属製であってもよいが、チャンバ12の外周壁面を安全性の観点から絶縁材料で被覆した構成として内周壁面を金属製としたものを含むことができる。チャンバ12の金属材料には特に限定されない。   Hereinafter, a plasma generator according to an embodiment of the present invention will be described with reference to the accompanying drawings. The plasma generator 10 includes a cylindrical chamber 12 made of metal such as SUS. The meaning of the metal includes that the chamber 12 itself may be made of metal, but the outer peripheral wall surface of the chamber 12 is covered with an insulating material from the viewpoint of safety, and the inner peripheral wall surface is made of metal. be able to. The metal material for the chamber 12 is not particularly limited.

チャンバ12は接地されている。チャンバ12にはガス導入口14とガス排出口16とが設けられている。プラズマ発生用ガスは活性ガス、不活性ガスでよく、活性ガスとしては例えば水素ガスがあり、不活性ガスとしては例えばアルゴンガスがある。チャンバ内圧力は10Paから10000Paの範囲の圧力でよく、この範囲で適宜に設定することができる。   The chamber 12 is grounded. The chamber 12 is provided with a gas inlet 14 and a gas outlet 16. The plasma generating gas may be an active gas or an inert gas. The active gas is, for example, hydrogen gas, and the inert gas is, for example, argon gas. The pressure in the chamber may be in the range of 10 Pa to 10000 Pa, and can be appropriately set within this range.

チャンバ12の内部には金属製のコイル18が配設されている。このコイル18の材料には特に限定されないが、例えばSUSがある。   A metal coil 18 is disposed inside the chamber 12. The material of the coil 18 is not particularly limited, but there is, for example, SUS.

コイル18の一端側は直流電源20の負極に接続されて負電位が印加されている。直流電源20の正極は接地されている。これにより、チャンバ12内空間は直流電源20の正電位と同電位となっている。コイル18の他端側はフローティングされている。コイル18の他端側はフローティングする必要は必ずしもなく、コイル18の他端側はその一端側に接続されてもよい。コイル18の線径には特に限定されないが、例えば2mmから25mmである。コイル18の線間間隔には特に限定されないが、例えば2mmから20mmである。これら線径、線間間隔は実験等により適宜に決定することができる。本発明者の実験では上記範囲で程度に相違はあるものの、いずれも実施することができた。   One end of the coil 18 is connected to the negative electrode of the DC power supply 20 and is applied with a negative potential. The positive electrode of the DC power supply 20 is grounded. Thereby, the space in the chamber 12 is at the same potential as the positive potential of the DC power supply 20. The other end side of the coil 18 is floating. The other end side of the coil 18 does not necessarily need to float, and the other end side of the coil 18 may be connected to one end side thereof. The wire diameter of the coil 18 is not particularly limited, but is, for example, 2 mm to 25 mm. The distance between the coils 18 is not particularly limited, and is, for example, 2 mm to 20 mm. These wire diameters and spacings between the wires can be appropriately determined by experiments or the like. In the experiment of the present inventor, although there was a difference in the above range, any of them could be carried out.

コイル18は、螺旋状の開孔を有する周壁に囲まれてなる導電性の筒状体であると言い換えることができる。この開孔はコイル18が螺旋形状であるためにコイル18の一端側から他端側にかけて連続した孔形状となっている。図示しないが、コイル18に代えて、網目状の開孔を有する周壁に囲まれてなる導電性の筒状体でもよい。網目の太さや粗さは適宜実験等により決定することができる。   In other words, the coil 18 is a conductive cylindrical body surrounded by a peripheral wall having a spiral opening. Since the coil 18 has a spiral shape, the opening has a continuous hole shape from one end side to the other end side of the coil 18. Although not shown, instead of the coil 18, a conductive cylindrical body surrounded by a peripheral wall having a mesh-like opening may be used. The thickness and roughness of the mesh can be appropriately determined by experiments or the like.

直流電源20は好ましくは電圧可変型である。直流電源20の電圧は100Vから2000Vの電圧範囲である。直流電源20の電圧は適宜に実験等により決定することができる。  The DC power supply 20 is preferably a voltage variable type. The voltage of the DC power supply 20 is in the voltage range of 100V to 2000V. The voltage of the DC power supply 20 can be appropriately determined by experiments or the like.

以上の構成を備えたプラズマ発生装置10において、チャンバ12内を減圧しかつガス導入口14からプラズマ発生用ガスとして水素ガスを導入し、直流電源20の負電位をコイル18に印加すると、コイル18の内部空間にプラズマ柱24が発生する。   In the plasma generating apparatus 10 having the above configuration, when the inside of the chamber 12 is depressurized and hydrogen gas is introduced as a plasma generating gas from the gas introduction port 14, and the negative potential of the DC power supply 20 is applied to the coil 18, the coil 18 A plasma column 24 is generated in the internal space.

図2は、本発明者が製造し実験室内に配置してある本実施の形態に対応したプラズマ発生装置10によりコイル18の内部空間にプラズマ24が発生している様子を示す写真である。図2(a)の写真は、直流電源20の負電圧700V、メタン/水素ガス、圧力80Paのものであり、図2(b)の写真は、直流電源20の負電圧700V、メタン/水素ガス、圧力170Paのものである。コイル18の材料はSUSである。写真内には符号をとれないが、コイル18とワイヤ22とプラズマ柱24とが明瞭に撮影されている。   FIG. 2 is a photograph showing a state in which the plasma 24 is generated in the internal space of the coil 18 by the plasma generator 10 corresponding to the present embodiment manufactured by the present inventor and disposed in the laboratory. The photograph in FIG. 2 (a) is for the DC power supply 20 with a negative voltage of 700V, methane / hydrogen gas, and a pressure of 80Pa, and the photograph in FIG. 2 (b) is the DC power supply 20 with a negative voltage of 700V, methane / hydrogen gas. The pressure is 170 Pa. The material of the coil 18 is SUS. Although a code cannot be taken in the photograph, the coil 18, the wire 22, and the plasma column 24 are clearly photographed.

このプラズマ発生装置10を用いてワイヤ等の長尺物である成膜対象に成膜する方法を説明すると、コイル18の内部に導電性のワイヤ22を配置する。ワイヤ22の両端を交流電源23を接続し、ワイヤ22を加熱する。ガス導入口14からプラズマ発生用ガスとして水素ガスと、ワイヤ22の表面に対する炭素膜成膜用ガスとしてメタンガスとを導入する。そして、チャンバ内圧を減圧し、直流電源20の負電位をコイル18に印加したとき、コイル18の内部空間にプラズマ柱24が発生し、これにより、メタンガスが分解され、ワイヤ22の表面に炭素膜が成膜される。なお、図2の写真ではコイル18の内部空間にワイヤ22が配置されており、このワイヤ22の表面に炭素膜を成膜することができた。   A method of forming a film on an object to be formed which is a long object such as a wire using the plasma generator 10 will be described. The conductive wire 22 is disposed inside the coil 18. An AC power supply 23 is connected to both ends of the wire 22 to heat the wire 22. Hydrogen gas as plasma generating gas and methane gas as carbon film forming gas for the surface of the wire 22 are introduced from the gas inlet 14. When the chamber internal pressure is reduced and the negative potential of the DC power supply 20 is applied to the coil 18, a plasma column 24 is generated in the internal space of the coil 18, whereby methane gas is decomposed and a carbon film is formed on the surface of the wire 22. Is deposited. In the photograph of FIG. 2, the wire 22 is disposed in the internal space of the coil 18, and a carbon film can be formed on the surface of the wire 22.

図3は、本発明の他の実施の形態に係るプラズマ発生装置10の構成を示す図であり、図3で示すプラズマ発生装置10が、図1で示すプラズマ発生装置10と相違するのは、直流電源20の正極がチャンバ12内部に臨設されていることである。図3に示すプラズマ発生装置10においても、コイル12の内部空間にプラズマ柱24が発生する。   FIG. 3 is a diagram showing a configuration of a plasma generator 10 according to another embodiment of the present invention. The plasma generator 10 shown in FIG. 3 is different from the plasma generator 10 shown in FIG. That is, the positive electrode of the DC power supply 20 is provided inside the chamber 12. Also in the plasma generator 10 shown in FIG.

本発明の実施形態に係るプラズマ発生装置の構成を示す図である。It is a figure which shows the structure of the plasma generator which concerns on embodiment of this invention. 本発明の実施の形態に係るプラズマ発生装置によりプラズマ柱が発生している様子を示す写真である。It is a photograph which shows a mode that the plasma column is generate | occur | produced by the plasma generator which concerns on embodiment of this invention. 本発明の他の実施形態に係るプラズマ発生装置の構成を示す図である。It is a figure which shows the structure of the plasma generator which concerns on other embodiment of this invention.

符号の説明Explanation of symbols

10 プラズマ発生装置
12 チャンバ
14 ガス導入口
16 ガス排出口
18 コイル
20 直流電源
22 ワイヤ
24 プラズマ柱
DESCRIPTION OF SYMBOLS 10 Plasma generator 12 Chamber 14 Gas inlet 16 Gas outlet 18 Coil 20 DC power supply 22 Wire 24 Plasma column

Claims (3)

減圧されかつプラズマ発生用ガス雰囲気下のチャンバ内に、導電性のコイルを配置し、このコイルの一端側に直流電源の負電位を印加し、かつ、前記直流電源の正極側を前記チャンバと共に接地するか前記直流電源の正極側を前記チャンバ内空間に臨設することで、前記コイル外で前記チャンバ内の空間に前記直流電源の正電位と実質同電位を印加する、ことを特徴とするプラズマ発生装置。 A conductive coil is placed in a chamber under a reduced-pressure plasma generating gas atmosphere, a negative potential of a DC power supply is applied to one end of the coil, and the positive side of the DC power supply is grounded together with the chamber The plasma generation is characterized in that a positive potential side of the DC power supply is applied to the space in the chamber outside the coil by placing a positive electrode side of the DC power supply in the chamber space. apparatus. 導電性ワイヤの表面に成膜する成膜方法において、
請求項1に記載のプラズマ発生装置における前記コイル内の空間に導電性ワイヤを配置し、この導電性ワイヤの両端を交流電源に接続し、前記チャンバ内を減圧しかつ当該チャンバ内にプラズマ発生用ガスと成膜用ガスとを導入し、前記コイルの一端側に直流電源の負極側電位を印加して前記コイル内の空間にプラズマ柱を発生させ、前記導電性ワイヤの表面に成膜をする、ことを特徴とする成膜方法。
In a film forming method for forming a film on the surface of a conductive wire,
2. The plasma generator according to claim 1, wherein a conductive wire is disposed in a space in the coil, both ends of the conductive wire are connected to an AC power source, the pressure in the chamber is reduced, and plasma is generated in the chamber. A gas and a film forming gas are introduced, a negative electrode side potential of a DC power supply is applied to one end of the coil to generate a plasma column in the space in the coil, and a film is formed on the surface of the conductive wire. A film forming method characterized by the above.
前記成膜用ガスが、炭素系ガスである、ことを特徴とする請求項2に記載の成膜方法。 The film forming method according to claim 2, wherein the film forming gas is a carbon-based gas.
JP2005115560A 2005-01-05 2005-04-13 Plasma generator and film forming method using the same Active JP4925600B2 (en)

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JP2005115560A JP4925600B2 (en) 2005-04-13 2005-04-13 Plasma generator and film forming method using the same
US10/558,874 US8808856B2 (en) 2005-01-05 2005-10-13 Apparatus and method for producing carbon film using plasma CVD and carbon film
KR1020057023130A KR101313919B1 (en) 2005-01-05 2005-10-13 Apparatus and method for producing carbon film using plasma cvd and carbon film
KR1020127023664A KR101342356B1 (en) 2005-01-05 2005-10-13 Method for producing carbon film using plasma cvd and carbon film
CN2005800003526A CN1906127B (en) 2005-01-05 2005-10-13 Apparatus for manufacturing carbon film by plasma CVD, method for manufacturing the same, and carbon film
EP05793094A EP1834925A1 (en) 2005-01-05 2005-10-13 Apparatus for manufacturing carbon film by plasma cvd, method for manufacturing the same, and carbon film
PCT/JP2005/018894 WO2006073017A1 (en) 2005-01-05 2005-10-13 Apparatus for manufacturing carbon film by plasma cvd, method for manufacturing the same, and carbon film
TW094138909K TWI403611B (en) 2005-01-05 2005-11-04 An apparatus for manufacturing a carbon film using plasma CVD, a method for manufacturing the same, and a carbon film
TW094138909A TW200630505A (en) 2005-01-05 2005-11-04 Apparatus for producing carbon film and production method therefor

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