JP2006278029A - Electron beam device and method for manufacturing device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam device carrying out evaluation of a test piece without dropping the throughput even when an evaluated pattern is made fine and to provide a method for manufacturing the device using it. <P>SOLUTION: The electron beam device irradiates a plurality of primary beams on the test piece W, separates a plurality of secondary beams emitted from the test piece from the primary beams by a beam separator 20 and has the secondary beams make incidence in a detector 28 by enlarging the distance between a plurality of secondary beams by a magnifying optical system 5. The electron beam device is provided with a compensating lens 16 compensating the axial chromatic aberration in a plurality of primary beams and the beam separator 20 is installed between the compensating lens 16 and the test piece W. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electronic apparatus for evaluating a substrate having a pattern with a minimum line width of 0.2 μm or less with high throughput and high resolution, and a device manufacturing method using the apparatus.

  An electron beam apparatus that irradiates a sample with an electron beam having a rectangular cross section, enlarges secondary electrons emitted from the sample, forms an image on a detection surface, and inspects the sample surface is known (for example, Patent Document 1). reference). However, since this type of electron beam apparatus has a large axial chromatic aberration, there has been a problem that the throughput has to be greatly reduced in order to obtain an S / N ratio necessary for high-resolution evaluation.

  Also known is an electron beam apparatus that scans a sample surface with a plurality of beams and detects secondary electrons from the sample with a plurality of detectors to increase the throughput (see, for example, Patent Document 2). However, when scanning a plurality of beams, it has not been elucidated until now how the plurality of beams can be arranged for the most efficient evaluation. In addition, when a magnetic lens is used as an objective lens in the electron beam apparatus, there is a problem that secondary electrons emitted from the sample in the normal direction of the sample surface do not intersect the optical axis.

Moreover, it has been known to obtain an ellipse with a super resolution of 1 nm or less by correcting on-axis aberrations, but not increasing the resolution by correcting aberrations, but increasing the beam intensity has not been implemented. It was.
JP 2002-216694 A US Pat. No. 5,922,224

  The present invention has been proposed to solve the above problems, and the present invention provides an electron beam apparatus capable of evaluating a sample without reducing the throughput even if the pattern to be evaluated becomes fine, and the apparatus. An object is to provide a device manufacturing method used.

In order to achieve the above object, the invention of claim 1
An electron beam apparatus that evaluates the sample by scanning the sample with a plurality of primary beams arranged in m rows and n columns, detecting a secondary beam emitted from the sample,
The scanning is simultaneously performed by scanning m × n beams in a direction inclined by an angle corresponding to 1 / m with respect to the row direction, and the raster pitch of the scanning is set to an integral multiple of the pixel size. Electron beam equipment,
I will provide a.

The invention of claim 2
An electron beam apparatus that irradiates a sample surface with an electron beam having a rectangular cross section, expands a secondary electron beam emitted from the sample with a mapping projection optical system including an NA aperture plate, and obtains an image of the sample,
An electron beam apparatus, wherein the NA aperture plate is disposed at a position where aberration is minimized, or an optical conjugate surface of the NA aperture plate is formed;
I will provide a.

The invention of claim 3 is characterized in that the magnified image is square.
The invention of claim 4
A sample is irradiated with a plurality of primary beams, a plurality of secondary electron beams emitted from the sample are separated from the primary beam by a beam separator, and a distance between the plurality of secondary electron beams is expanded by an expanding optical system. An electron beam device that is incident on the detector,
An electron beam apparatus comprising: a correction lens that corrects axial chromatic aberration of the plurality of primary beams, wherein the beam separator is disposed between the correction lens and the sample.

The invention of claim 5
The primary beam is shaped into a rectangular cross section and focused by an objective lens to irradiate the sample, the secondary electron beam emitted from the sample is accelerated and focused by the objective lens, and magnified by a magnifying optical system including an NA aperture plate An electron beam device that detects with a sensor,
The objective lens is an electromagnetic lens;
An electron beam apparatus characterized in that an optical conjugate plane of the NA aperture plate is located at a position where the secondary electron beam emitted around a direction specified with respect to a normal direction of the sample passes. .

The invention of claim 6
A method of manufacturing a device using the electron beam apparatus according to claim 1,
a. A process of preparing a wafer;
b. Performing the wafer process; and
c. Evaluating the wafer that has undergone the step b;
d. Repeating steps a to c as many times as necessary;
e. Cutting the wafer after step d and assembling it into a device;
A device manufacturing method comprising:
I will provide a.

  Hereinafter, some embodiments of the electron beam apparatus according to the present invention will be described in detail with reference to FIGS. In all the drawings, the same reference numerals and reference numerals indicate the same or similar components.

  FIG. 1 is a diagram schematically showing the configuration of a first embodiment of an electron beam apparatus according to the present invention. This electron beam apparatus includes an electron beam emitter 1, a primary electron optical system 2, a beam separation system 3, An objective optical system 4, a secondary electron optical system 5, and a detection system 6 are provided. The electron emission unit 1 includes an electron gun 10, which has a single crystal LaB6 cathode and operates under space charge limiting conditions.

  The primary beam emitted from the electron gun 10 enters the primary electron optical system 2. The primary electron optical system 2 includes a condenser lens 11, a multi-aperture plate 12, a rotation correction lens 13, an NA aperture plate 14, a reduction lens 15, and an axial chromatic aberration correction lens 16. The primary beam from the electron gun 10 is a condenser lens. The multi-aperture plate 12 focused by 11 and having a plurality of holes is uniformly irradiated. The electron beam converted into a multi-beam by the multi-aperture plate 12 is crossed over the NA aperture plate 14 by the condenser lens 11 and the rotation correction lens 13. The condenser lens 11 and the rotation correction lens 13 are used to adjust a region where the multi-aperture plate 12 is irradiated while the crossover is fixed to the NA aperture plate 14, or to adjust a current density which irradiates the multi-aperture plate 12. Can do.

  The multibeam that has passed through the NA aperture plate 14 is reduced by the reduction lens 15 to form an image of the multi aperture plate 12 at a point 17. This image becomes an image 18 of the multi-aperture plate 12 having negative axial chromatic aberration by the axial chromatic aberration correcting lens 16. The traveling direction of the multi-beams forming the image 18 is changed to a direction perpendicular to the sample W by the beam separation system 3 including the electrostatic deflector 19, the electromagnetic deflector 20, and the electrostatic deflector 21. To form a final image on the sample W. Note that the negative axial chromatic aberration is canceled by the positive axial chromatic aberration of an objective lens (described later), so that the chromatic aberration is eliminated.

  The axial chromatic aberration correction lens 16 includes a plurality of stages, for example, four stages of quadrupole lenses QL 1, QL 2, QL 3, QL 4 and magnetic quadrupoles 23, 24, and shafts generated by the reduction lens 15 and the objective lens 22. The upper chromatic aberration is designed to be canceled by the quadrupole lenses QL1 to QL4 and the magnetic quadrupoles 23 and 24. The scanning of the sample W by the multi-beam is performed by the two-stage electrostatic deflectors 19 and 21, and in particular, the ratio of the scanning signal applied to the electrostatic deflector 19 and the scanning signal applied to the electrostatic deflector 21 is optimized. By optimizing the deflection fulcrum, the aberration during scanning can be reduced. Here, the deflection chromatic aberration of the beam separator is substantially reduced by setting the distance between the reduced image 18 of the multi-aperture plate 12 and the electrostatic deflector 19 to half the distance between the image 18 and the electromagnetic deflector 20. It can be completely corrected.

  The secondary electron group emitted from the scanning point of the sample W is accelerated by the high voltage of the objective lens 22, separated from the primary beam by the electromagnetic deflector 20, and enters the secondary electron optical system 6. The secondary electron optical system 5 includes a magnifying lens 25 and rotation correction lenses 26 and 27. The secondary electron beam separated by the electromagnetic deflector 20 is magnified by the magnifying lens 25 and further magnified by the rotation correction lenses 26 and 27 to form a magnified image on the detection system 6. The detection system 6 is a multi-detector 28 in which a plurality of detectors are arranged on the same plane, so that each beam forming a multi-beam can be detected independently by each detector. The rotation correction lenses 26 and 27 are of a current control type, and the current is controlled so as to generate a magnetic field on the optical axis in opposite directions.

  FIG. 2 is a beam arrangement diagram showing how the beam is arranged in a region on the sample W irradiated by the multi-beam formed from the primary beam by the multi-aperture plate 12 in FIG. The position of is indicated by a black circle. In FIG. 2, the region surrounded by the circle 31 is a region where the multi-aperture plate 12 is uniformly irradiated by the beam emitted from the electron gun 10 or a region where the aberration of the optical system is less than a specified value. The diameter d1 is, for example, 4 μm. Specifically, this region is a region where a beam intensity of 90% or more is obtained with respect to the beam intensity on the optical axis.

  The reason why the area is irradiated with an intensity of 90% or more is that there is a problem in image formation if the intensity of the multi-beams is not uniform. Furthermore, in order to narrow down all the multi-beams, it is necessary to make the aberration of the optical system equal to or less than a predetermined value. Further, although it is known that axial chromatic aberration can be corrected by a correction lens, it is predicted that there are many off-axis aberrations because the optical system is not axially symmetric. Therefore, a region where the off-axis aberration of the longitudinal chromatic aberration correcting lens 16 is smaller than a predetermined threshold may be set as the circle 31. In practice, these conditions must be met.

As shown in the figure, when coordinates having two orthogonal axes X and Y are taken on the region, the multi-beams are arranged in a matrix of m rows and n columns on the XY plane (where m and n are positive) Integer, where m is the number of beams in the X-axis direction and n is the number of beams in the Y-axis direction). The inter-column distance d2 is, for example, 403 nm. As a result, m × n beams are created in the region 31. Therefore, when the sample W is scanned in the X-axis direction, the scanning direction is inclined by sin ⁻¹ (1 / m) with respect to the X-axis so that the distances d3 between the beams when projected onto the Y-axis are all equal. can do. For example, when m = 8, sin ⁻¹ (1/8) = 7.18 degrees, and d3 is, for example, 50 nm. Thus, by making the raster pitch when scanning in the X-axis direction, that is, the distance between adjacent trajectories when one beam scans the sample W, equal to or an integral multiple of the size of one pixel, A multi-channel SEM image can be formed without waste.

The beam interval d2 is pixel size × m / cos (sin ⁻¹ (1 / m)). When m is large, the denominator is close to 1, and the beam interval is m times the pixel size. Here, if m is increased, the beam interval is widened, which is disadvantageous for arranging many beams in a circle within a certain aberration. On the contrary, the detection of the beam by the multi-detector 28 becomes easier when the beam interval of the secondary electron beam is larger. In this sense, if priority is given to the number of beams, m <n is preferable. Conversely, if priority is given to easy detection of the beam, m> n is preferable.

  Even when m ≠ n, as shown in FIG. 2, even if the additional beams 32 to 41 are further arranged outside the matrix arrangement of m rows and n columns, the raster intervals can be made equal. it can.

  As described above in detail, in the first embodiment of the present invention, since the axial chromatic aberration of the primary beam is corrected by using the axial chromatic aberration correction lens 16, evaluation with high resolution is possible even if the throughput is increased. The S / N ratio necessary for performing the above can be obtained. In addition, since the electromagnetic deflector 20 is disposed between the reduced image 18 of the multi-aperture plate 12 and the objective lens 22, the distance through which the primary beam and the secondary electron group pass in common is shortened, and the secondary beam is reduced. The space charge effect on the primary beam is reduced, and the sample W can be scanned with a large number of narrowly focused beams.

  Next, a second embodiment of the electron beam apparatus according to the present invention will be described with reference to FIG. Also in this embodiment, the electron beam apparatus includes an electron beam emitter 1, a primary electron optical system 2, a beam separation system 3, an objective optical system 4, a secondary electron optical system 5, and a detection system 6. The electron beam emitted from the electron gun 50 of the electron beam emitting unit 1 is focused by the condenser lens 51 of the primary electron optical system 2 and has a uniform intensity (for example, within 20% of intensity non-uniformity) in the shaped aperture plate 52. Irradiate with. As a result, the electron beam that has passed through the shaped aperture plate 52 is shaped into a beam having a rectangular cross section.

  The primary beam having a rectangular section in this way enters the beam separation system 3 through the rotation correction lenses 53 and 54, the shaping lens 55, and the axial alignment deflectors 56 and 57 that further constitute the primary electron optical system 2. The beam separation system 3 includes an electromagnetic deflector 58, and the traveling direction of the primary beam that has passed through the primary electron optical system 2 is changed to a direction perpendicular to the sample W by the electromagnetic deflector 58. The primary beam whose traveling direction has been changed by the electromagnetic deflector 58 passes through the primary beam aperture provided in the NA aperture plate 59 of the objective lens system 4, is focused by the objective lens 60, and is imaged on the sample W.

  The axial alignment deflectors 56 and 57 are provided to shift the primary beam and the secondary beam emitted from the sample W by irradiation thereof so that they take a separate trajectory between the electromagnetic deflector 58 and the sample W. It has been. In FIG. 3, a dotted line 61 indicates the trajectory of the primary beam shifted by these alignment deflectors 56 and 57. In the figure, since the trajectory of the secondary electrons is displayed in a horizontal direction, the primary electrons appear to pass through the secondary electrons, but the primary beam actually passes outside the secondary beams. Further, as shown in FIG. 3, the plurality of openings are provided in the shaped opening plate 52 in order to compensate for a change in magnification caused by changing the acceleration voltage in order to change the irradiation voltage. Further, the rotation angles of the two rotation correction lenses 53 and 54 are changed by changing the acceleration voltage by the various lenses of the primary electron optical system 2 for the primary beam having a rectangular cross section by the shaping aperture plate 52. It is used to correct.

  The secondary beam emitted from the sample W by the irradiation of the primary beam passes through the objective lens 60 and the NA aperture plate 59, is separated from the primary beam by the electromagnetic deflector 58, and is deflected by the electrostatic deflector 62 of the beam separation system 3. Thus, an enlarged image is formed at the point 63. The electrostatic deflector 62 is provided for deflecting in the opposite direction by the same angle as the electromagnetic deflector 58 in order to correct the deflection chromatic aberration caused by the electromagnetic deflector 58. In order to correct the deflection chromatic aberration, the distance between the point 63 and the electromagnetic deflector 58 is set to be twice the distance between the point 63 and the electrostatic deflector 62.

  The secondary beam that forms an enlarged image at the point 63 by the objective lens 59 is subjected to axial chromatic aberration correction by the axial chromatic aberration correction lens 64 made of a non-dispersive Wien filter, and is formed on the main surface of the auxiliary lens 65. Therefore, the auxiliary lens 65 forms an image of the NA aperture plate 59 on the main surface of the magnifying lens 66 as an image 67, thereby reducing the beam spread at the magnifying lens 66, and distortion aberration generated by the magnifying lens 66. Make it smaller. An image 67 of the NA aperture plate 59 is magnified by two-stage magnifying lenses 66 and 68 to form a magnified image on an MCP (microchannel plate) 69 of the detection system 6. Thus, an image of the sample W is detected. An auxiliary lens 70 is disposed at the image point of the magnified image by the magnifier lens 66. The auxiliary lens 70 has a function of forming an image 67 of the NA aperture plate 59 on the main surface of the magnifying lens 68.

  Here, the axial chromatic aberration correction lens 64 will be described. This correction lens 64 is also called a Wien filter, and focuses the beam emitted from the end face twice, but becomes non-dispersive in the second crossover image and generates negative axial chromatic aberration. FIG. 4 shows only a quarter portion of the cross section of the correction lens 64. As can be seen, the correction lens 64 has a dodecapole, satisfies the Wien condition with a dipole electromagnetic field, and not only makes the axial chromatic aberration negative by the quadrupole electric field / magnetic field, but also the electric field of the hexapole field. By generating a negative spherical chromatic aberration by applying a magnetic field, it is possible to partially correct spherical aberration mainly occurring in the objective lens 60. The twelve-pole electrode 64-1 is made of Permalloy B, and generates a dipole, quadrupole, or hexapole magnetic field by passing a current through the coil 64-2. In the figure, reference numeral 64-3 indicates a permalloy core, and 64-4 is a spacer for insulating each electrode.

  As described above, in the secondary electron optical system 5, the axial chromatic aberration of the secondary beam is corrected. Therefore, even if the NA aperture plate 59 is enlarged, the aberration is reduced and a secondary beam having a large aperture angle is generated. It can pass through the NA aperture plate 59. Therefore, since the transmittance of the secondary beam is large and many secondary beams per pixel enter the MCP 69, there is an advantage that image processing can be performed at high speed.

  In FIG. 3, reference numeral 67 denotes an image obtained by forming the NA aperture plate 59 on the main surface of the magnifying lens 66. The position of the optical conjugate surface 67 of the NA aperture plate 59 can be set to an arbitrary position along the optical axis of the secondary beam by adjusting the focal length of the auxiliary lens 65. Even with this setting, a secondary beam image with axial chromatic aberration correction formed on the main surface of the auxiliary lens 65. The position of the NA aperture plate 59 is designed by utilizing the fact that the position where the secondary beam emitted from the edge of the field of view and the secondary beam emitted from near the optical axis intersect with the optical axis is slightly different. By designing the NA aperture plate 59 so that the secondary beam emitted from the edge of the field of view intersects the optical axis, the signal based on the secondary electron beam emitted from the edge of the field of view can be strengthened. The problem that the electron gun cannot increase the beam current density at the edge of the field of view can be partially solved.

  On the other hand, regarding the shape of the visual field, the axial chromatic aberration correction lens 64 cannot increase the visual field. For this reason, the surface of the sample W is illuminated in a circular shape by the primary beam, and the MCP 69 preferably has a square detection surface of, for example, 2048 × 2048 pixels.

  In the two embodiments described above, when the objective lenses 22 and 60 are electromagnetic lenses, the secondary electron beam emitted in the normal direction of the sample W does not intersect the optical axis. However, it has been found by simulation that the secondary electron beam emitted in a direction inclined by 8.5 degrees with respect to the normal direction intersects the optical axis. Since the secondary electron beam is emitted in accordance with the cosine law, the intensity of the secondary electron beam emitted in the direction inclined by 8.5 degrees is cos 8.5 = 0.9, and the second electron beam emitted in the optical axis direction. Not much different from secondary electron beam. Therefore, in the present invention, the intended operation can be performed by using the secondary electron beam emitted in the direction inclined by 8.5 degrees from the normal direction of the sample W.

  Next, a device manufacturing method using the electron beam apparatus according to the present invention described with reference to FIGS. 1 to 3 will be described. FIG. 4 is a flowchart showing an example of such a manufacturing method. The manufacturing process of this example includes the following main processes. Each main process consists of several sub-processes.

(1) Process P11 for manufacturing wafer P12 (or preparing a wafer),
(2) A mask manufacturing process for manufacturing a mask (reticle) P22 used for exposure (or a mask preparing process for preparing a mask) P21,
(3) Wafer processing step P13 for performing necessary processing on wafer P12;
(4) Chip assembling process P14 that enables the chip P15 formed on the wafer P12 to be cut and operated one by one,
(5) A chip inspection process P16 for inspecting the chip P15 produced in the chip assembly process P14.

  Among these main processes, the main process that has a decisive influence on the performance of the semiconductor device is the wafer processing process P13. In this process, designed circuit patterns are sequentially stacked on a wafer to form a large number of chips that operate as memories and MPUs. The wafer processing process P13 includes the following processes.

(A) A thin film forming process for forming a dielectric thin film as an insulating layer or a metal thin film for forming a wiring part or an electrode part (using CVD, sputtering, etc.)
(B) oxidation process for oxidizing thin film layers and wafer substrates,
(C) a lithography process P23 for forming a resist pattern using a mask (reticle) P22 for selectively processing a thin film layer, a wafer substrate, and the like;
(D) Ion / impurity implantation / diffusion process,
(E) resist stripping step,
(F) An inspection process for inspecting a further processed wafer.
The wafer processing step P13 is repeatedly performed for the required number of layers, and the semiconductor device P17 operating as designed is manufactured.

The core of the wafer processing process P13 of FIG. 4 is the lithography process P23, and FIG. 5 shows the process performed in the lithography process P23. That is, the lithography process P23
(A) a resist coating step P31 for coating a resist on the wafer on which the circuit pattern is formed in the previous step;
(B) an exposure step P32 for exposing the resist;
(C) Development step P33 for developing the exposed resist to obtain a resist pattern;
(D) An annealing step P34 for stabilizing the developed resist pattern;
including.

  When defect inspection is performed using the electron beam apparatus according to the present invention for the chip inspection process P16 of (5) above, even a semiconductor device having a fine pattern can be inspected with high throughput, and 100% inspection is possible. In addition, the yield of products can be improved, and the shipment of defective products can be prevented. Note that the semiconductor device manufacturing process, the wafer processing process P13, and the lithography process P23 described above are well known, and a description thereof will be omitted.

  As described above, the electron beam apparatus and the semiconductor device manufacturing method using the apparatus according to the present invention have been described. However, the present invention is not limited to these embodiments, and various modifications are apparent to those skilled in the art. Can be modified and changed. For example, as a detector used in the detection system 6, a line sensor may be used instead of a surface sensor such as an MCP or a multi-detector.

  In the present invention, since the axial chromatic aberration correction lens is provided in the primary electron optical system or the secondary electron optical system, the throughput can be greatly improved and the sample can be evaluated with high resolution. Although the field of view of the axial chromatic aberration correction lens is relatively narrow, a two-dimensional image of the sample can be efficiently obtained by using, for example, a square field of view having a two-dimensional extent. Further, since the distance through which the primary beam and the secondary beam pass is short, the effect of the space charge effect is mitigated.

1 is a diagram schematically showing a configuration of a first embodiment of an electron beam apparatus according to the present invention. FIG. 2 is a beam arrangement diagram showing positions where each beam irradiates a sample surface in the electron beam apparatus of FIG. It is a figure which shows schematically the structure of 2nd Embodiment of the electron beam apparatus which concerns on this invention. It is a figure which shows an example of a structure of the axial chromatic aberration correction lens 64 of FIG. It is a flowchart which shows an example of the semiconductor device manufacturing method using the electron beam apparatus which concerns on this invention. It is a figure which shows the process implemented by the lithography process in FIG.

Explanation of symbols

1: electron beam emitting unit, 2: primary electron optical system, 3: beam separation system, 4: objective optical system, 5: secondary electron optical system, 6: detection system,
10: electron gun, 11: condenser lens, 12: multi-aperture plate, 13: rotation correction lens, 14: NA aperture plate, 15: reduction lens, 16: axial chromatic aberration correction lens, 19: electrostatic deflector, 20 : Electromagnetic deflector 21: Electrostatic deflector 22: Objective lens 25: Magnifying lens 26, 27: Rotation correction lens 28: Multi-detector
31: Area uniformly irradiated by an electron gun, 32-41: Additional beam,
50: Electron gun, 51: Condenser lens, 52: Molded aperture plate, 53, 54: Rotation correction lens, 55: Molded lens, 56, 57: Axis alignment deflector, 58: Electromagnetic deflector, 59: NA aperture plate , 60: objective lens, 61: trajectory of the primary beam, 62: electrostatic deflector, 64: axial chromatic aberration correction lens, 65: auxiliary lens, 66, 68: magnifying lens, 67: image of NA aperture plate 59, 69 : MCP, 70: Auxiliary lens

Claims (6)

An electron beam apparatus that evaluates the sample by scanning the sample with a plurality of primary beams arranged in m rows and n columns, detecting a secondary beam emitted from the sample,
The scanning is simultaneously performed by scanning m × n beams in a direction inclined by an angle corresponding to 1 / m with respect to the row direction, and the raster pitch of the scanning is set to an integral multiple of the pixel size. Electron beam equipment. An electron beam apparatus that irradiates a sample surface with an electron beam having a rectangular cross section, expands a secondary electron beam emitted from the sample with a mapping projection optical system including an NA aperture plate, and obtains an image of the sample,
An electron beam apparatus, wherein the NA aperture plate is arranged at a position where aberration is minimized, or an optical conjugate surface of the NA aperture plate is formed.   The electron beam apparatus according to claim 2, wherein the enlarged image is a square. A sample is irradiated with a plurality of primary beams, a plurality of secondary electron beams emitted from the sample are separated from the primary beam by a beam separator, and a distance between the plurality of secondary electron beams is expanded by an expanding optical system. An electron beam device that is incident on the detector,
An electron beam apparatus comprising: a correction lens that corrects axial chromatic aberration of the plurality of primary beams, wherein the beam separator is disposed between the correction lens and the sample. The primary beam is shaped into a rectangular cross section and focused by an objective lens to irradiate the sample, the secondary electron beam emitted from the sample is accelerated and focused by the objective lens, and magnified by a magnifying optical system including an NA aperture plate An electron beam device that detects with a sensor,
The objective lens is an electromagnetic lens;
An electron beam apparatus characterized in that an optical conjugate plane of the NA aperture plate is located at a position where the secondary electron beam emitted around a direction specified with respect to a normal direction of the sample passes. . A method of manufacturing a device using the electron beam apparatus according to claim 1,
a. A process of preparing a wafer;
b. Performing the wafer process; and
c. Evaluating the wafer that has undergone the step b;
d. Repeating steps a to c as many times as necessary;
e. Cutting the wafer after step d and assembling it into a device;
A device manufacturing method comprising:

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