JP2003332207A - Aligner using electron beam and processing device using the electron beam - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam aligner which is capable of projecting a pattern accurately on a wafer for exposure with a plurality of electron beams. <P>SOLUTION: The electron beam aligner is equipped with a first electromagnetic lens system which enables a plurality of the electron beams impinging nearly vertically on a first plane to impinge nearly vertically on a second plane, a second electromagnetic lens system which enables the electron beams impinging nearly vertically on the second plane to impinge nearly vertically on a wafer, and a plurality of rotation correcting lenses which make up for the rotation of the electron beams caused by the first electromagnetic lens system and/or the second electromagnetic lens system. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus and an electron beam processing apparatus. In particular, the present invention relates to an electron beam exposure apparatus capable of accurately exposing a pattern on a wafer with a plurality of electron beams.

[0002]

2. Description of the Related Art With the recent miniaturization of semiconductor devices,
Various electron beam exposure apparatuses have been developed in order to realize high resolution and high throughput. For example, Japanese Laid-Open Patent Publication No. 11-176737 discloses a split transfer type electron beam exposure for correcting deflection distortion of an electron beam according to a transfer position on the wafer, a height of the wafer, a beam current, and a degree of pattern dispersion. A device is disclosed. Further, Japanese Patent Application Laid-Open No. 9-245708 discloses an electron beam exposure apparatus that pre-corrects aberrations that occur when the electron beam is reduced. In addition, Japanese Patent Laid-Open No. 2001-26
Japanese Patent No. 7221 discloses an electron beam exposure apparatus that corrects distortion aberrations of a plurality of electron beams formed by dividing an electron beam.

[0003]

However, in the electron beam exposure apparatus disclosed in Japanese Patent Laid-Open No. 11-176737, the transfer position on the wafer, the height of the wafer, the beam current, Also, since the correction data calculated according to the degree of dispersion of the pattern is supplied, there is a problem that the function for calculating the correction data becomes complicated. Further, an electron beam exposure apparatus disclosed in Japanese Patent Laid-Open No. 9-245708, and Japanese Patent Laid-Open No. 2001-2001
The electron beam exposure apparatus disclosed in Japanese Patent No. 267221 has a problem that it is difficult to correct the rotation of the image of the electron beam that occurs when the electron beam is reduced.

Therefore, an object of the present invention is to provide an electron beam exposure apparatus and an electron beam processing apparatus which can solve the above problems. This object is achieved by a combination of features described in independent claims of the invention. The dependent claims define further advantageous specific examples of the present invention.

[0005]

That is, according to a first aspect of the present invention, there is provided an electron beam exposure apparatus which exposes a wafer with a plurality of electron beams, which is incident substantially perpendicularly to a first surface. A plurality of electron beams that are incident on the second surface substantially perpendicularly to the first electromagnetic lens system, and a plurality of electron beams that are incident substantially perpendicular to the second surface are substantially perpendicular to the wafer. A second electromagnetic lens system that is incident and a plurality of first rotation correction lenses that respectively correct the rotations of the plurality of electron beams by the first electromagnetic lens system and / or the second electromagnetic lens system are provided.

The first electromagnetic lens system reduces the plurality of electron beams incident on the first surface and makes them incident on the second surface, and the second electromagnetic lens system makes the electron beam incident on the second surface. The plurality of electron beams incident on the third surface may be reduced and incident on the third surface.

The first rotation correction lens may correct the rotation of the electron beam based on the irradiation position on the wafer of the electron beam passing through the first rotation correction lens.
The first rotation correction lens may correct the rotation of the electron beam based on the passing position of the electron beam passing through the first rotation correction lens on the first surface. The first rotation correction lens may be provided between the first surface and the second surface.

A plurality of first magnification correction lenses for respectively correcting the magnifications of the plurality of electron beams may be further provided. The first magnification correction lens may correct the magnification of the electron beam based on the irradiation position of the electron beam passing through the first magnification correction lens on the wafer. The first magnification correction lens may correct the magnification of the electron beam passing through the first magnification correction lens based on the passing position on the first surface of the electron beam.

The first magnification correction lens may correct the magnification of the electron beam by the rotation correction lens through which the electron beam passing through the first magnification correction lens passes. The first magnification correction lens may correct the magnification of the electron beam by the first electromagnetic lens system and / or the second electromagnetic lens system. The first magnification correction lens may be provided between the first surface and the second surface.

The first electromagnetic lens system has a plurality of first lens apertures through which a plurality of electron beams respectively pass, and a first multi-axis electromagnetic lens which independently focuses the plurality of electron beams,
A second lens aperture having a plurality of second lens apertures through which a plurality of electron beams pass, respectively, for independently focusing the plurality of electron beams.
A second electromagnetic lens system, wherein the second electromagnetic lens system has a plurality of third lens openings through which the plurality of electron beams pass, and independently focuses the plurality of electron beams. A third electromagnetic lens, a plurality of fourth lens openings through which a plurality of electron beams pass, and a second multi-axis electromagnetic lens fourth electromagnetic lens that independently focuses a plurality of electron beams are also included. Good.

The first multi-axis electromagnetic lens has a first focal length and the second multi-axis electromagnetic lens has a second focal length.
The first multi-axis electromagnetic lens is provided at a distance substantially the sum of the first focal length and the second focal length, and the third multi-axis electromagnetic lens has a third focal length, The 4-multiaxial electromagnetic lens may have a fourth focal length, and may be provided at a distance from the third multiaxial electromagnetic lens that is substantially the sum of the third focal length and the fourth focal length. .

The first multi-axis electromagnetic lens forms a magnetic field in a first direction, and the second multi-axis electromagnetic lens forms a magnetic field in a second direction which is substantially opposite to the first direction, The third multi-axis electromagnetic lens may form a magnetic field in the second direction and the fourth multi-axis electromagnetic lens may form a magnetic field in the first direction.

The first rotation correction lens may be provided in the magnetic field formed by the second lens opening of the second multi-axis electromagnetic lens. The first rotation correction lens may correct the rotation of the electron beam based on the strength of the magnetic field formed by the second lens opening. The first rotation correction lens may be provided at substantially the same position as the second multi-axis electromagnetic lens in the electron beam irradiation direction.

A first magnification correction lens, which is provided with the lens axis of the first rotation correction lens substantially at the center and corrects the magnification of the electron beam by the first rotation correction lens, may be further provided. The first magnification correction lens may be provided with the focal position of the second multi-axis electromagnetic lens substantially at the center.

A second rotation correction lens, which is provided about the lens axis of the first rotation correction lens and corrects the rotation of the electron beam by the first electromagnetic lens system and / or the second electromagnetic lens system, may be further provided. Good. The second rotation correction lens may be provided in the magnetic field formed by the first lens opening of the first multi-axis electromagnetic lens. The second rotation correction lens may correct the rotation of the electron beam based on the strength of the magnetic field formed by the first lens opening. The second rotation correction lens may be provided at substantially the same position as the first multi-axis electromagnetic lens in the electron beam irradiation direction.

A second magnification correction lens, which is provided with the lens axis of the second rotation correction lens substantially at the center and corrects the magnification of the electron beam by the second rotation correction lens, may be further provided. The second magnification correction lens may be provided in the magnetic field formed by the first lens opening of the first multi-axis electromagnetic lens.
A third magnification correction lens, which is provided with the lens axis of the second rotation correction lens substantially at the center and corrects the magnification of the electron beam by the second rotation correction lens, may be further provided. Second
The magnification correction lens and the third magnification correction lens may be provided at positions facing each other with the second rotation correction lens interposed therebetween.

The first rotation correction lens may be provided in the magnetic field formed by the second lens opening of the second multi-axis electromagnetic lens.

A deflection system, which is provided between the second surface and the third surface and which deflects the plurality of electron beams, may be further provided at a position on the wafer to be irradiated with the plurality of electron beams. A plurality of electron guns that respectively generate a plurality of electron beams, and an irradiation electron optical system that makes a plurality of electron beams respectively generated by the plurality of electron guns enter substantially perpendicularly to the first surface may be provided. A plurality of correction electron optical systems may be further provided for dividing each of the plurality of electron beams incident substantially perpendicularly to the first surface into a plurality of electron beams.

According to a second aspect of the present invention, there is provided an electron beam exposure apparatus which exposes a wafer with a plurality of electron beams, wherein the plurality of electron beams incident substantially perpendicularly to the first surface are respectively irradiated. A first electromagnetic lens system that is incident substantially perpendicularly to the second surface, and a second electromagnetic lens system that makes a plurality of electron beams incident substantially perpendicularly to the second surface incident substantially perpendicularly to the wafer. , First electromagnetic lens system and / or second
An electron beam exposure apparatus comprising: a plurality of first magnification correction lenses that respectively correct magnifications of a plurality of electron beams by an electromagnetic lens system.

According to the third aspect of the present invention, a first electromagnetic lens system for respectively injecting a plurality of electron beams, which are incident substantially perpendicularly to the first surface, substantially perpendicularly to the second surface, A second electromagnetic lens system, and a first electromagnetic lens system and / or a second electromagnetic lens system, in which a plurality of electron beams that are incident substantially perpendicularly to the second surface are incident substantially perpendicularly to the third surface, respectively. And a plurality of first rotation correction lenses for respectively correcting the rotations of a plurality of electron beams according to the above.

According to the fourth aspect of the present invention, a first electromagnetic lens system for respectively injecting a plurality of electron beams, which are incident substantially perpendicularly to the first surface, substantially perpendicularly to the second surface, A second electromagnetic lens system, and a first electromagnetic lens system and / or a second electromagnetic lens system, in which a plurality of electron beams that are incident substantially perpendicularly to the second surface are incident substantially perpendicularly to the third surface, respectively. And a plurality of first rotation correction lenses for respectively correcting magnifications of a plurality of electron beams according to the above.

The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the claimed invention, and the features described in the embodiments Not all combinations are essential to the solution of the invention.

FIG. 1 shows an example of the configuration of an electron beam exposure apparatus 10 according to an embodiment of the present invention. The electron beam exposure apparatus 10 includes an exposure unit 100 that performs a predetermined exposure process on the wafer 146 with an electron beam, and a control system 200 that controls the operation of each component of the exposure unit 100. The dashed line in the figure indicates the optical axis A of the electron beam, and the dotted lines indicate the focal plane B1, the focal plane B2, and the focal plane B of the electron beam.
3 shows the focal plane B4.

The exposure unit 100 has a plurality of electron guns 110 that generate electron beams and enter the focal plane B1 inside the housing 102, and a cross section of the plurality of electron beams that enter the focal plane B1. Irradiation electron optical system 1 which expands each and focuses a plurality of electron beams to enter a focal plane B2.
16, a plurality of correction electron optical systems 118 for dividing the plurality of electron beams and generating an electron beam including the plurality of divided electron beams, and a plurality of cross sections of the plurality of electron beams incident from the focal plane B2 respectively. , A plurality of first electromagnetic lens systems 124 that focus a plurality of electron beams respectively and make them incident on the focal plane B3, and a plurality of rotation / magnification correction lens systems 125 that respectively correct rotation and / or magnification of the plurality of electron beams. , The second electromagnetic lens system 130 that reduces the cross sections of the plurality of electron beams incident from the focal plane B3, focuses each of the plurality of electron beams, and makes the electron beams incident on the focal plane B4 (that is, the surface of the wafer 146), and the wafer. 146, a plurality of deflection systems 142 for respectively deflecting a plurality of electron beams to a position to be irradiated with the electron beams, and a focal plane B4 (that is, a surface of the wafer 146). A backscattered electron detector 144 for detecting the reflected electrons of the electron beam irradiated on the mark in)
A wafer stage 148 on which the wafer 146 is placed.

The electron gun 110 has a cathode 104, a grid 106, and an anode 108. Cathode 1
The electron beam emitted from 04 forms a crossover image between the grid 106 and the anode 108. The size of the crossover image is changed by changing the voltage applied to the grid 106.

The irradiation electron optical system 116 has a first multi-axis electromagnetic lens 112 and a second multi-axis electromagnetic lens 114. The first multi-axis electromagnetic lens 112 has a plurality of lens openings 111 through which each of a plurality of electron beams passes. The second multi-axis electromagnetic lens 114 also has a plurality of lens openings 113 through which a plurality of electron beams pass. Then, the irradiation electron optical system 116 expands the plurality of electron beams generated by the plurality of electron guns 110 by the first multi-axis electromagnetic lens 112 and the second multi-axis electromagnetic lens 114, respectively, and makes them perpendicular to the focal plane B2. Incident. That is,
The irradiation electron optical system 116 includes a plurality of correction electron optical systems 118.
A plurality of electron beams are made to enter a desired area in each of the above-mentioned directions substantially vertically.

The correction electron optical system 118 has an aperture array, a blanker array, an electromagnetic lens array, and a stopper array, which will be described later, and splits the electron beam incident substantially perpendicularly to the focal plane B2 into a plurality of electron beams, An electron beam including a plurality of split electron beams is generated. Then, the correction electron optical system 118 adjusts the focal positions of the plurality of divided electron beams.

The first electromagnetic lens system 124 has a third multi-axis electromagnetic lens 120 and a fourth multi-axis electromagnetic lens 122.
The third multi-axis electromagnetic lens 120 has a plurality of lens openings 119 through which a plurality of electron beams pass, respectively. Further, the fourth multi-axis electromagnetic lens 122 has a lens opening 121 through which a plurality of electron beams respectively pass.

The first electromagnetic lens system 124 is a doublet in which the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 122 are arranged side by side in the direction of the optical axis A. In other words, the first electromagnetic lens system 124 includes the third multi-axis electromagnetic lens 1
It has a plurality of doublets constituted by a plurality of 20 lens openings 119 and a plurality of lens openings 121 of the fourth multi-axis electromagnetic lens 122. Third multi-axis electromagnetic lens 1
20 focal length (ie focal length of lens aperture 119)
Is f1 and the focal length of the fourth multi-axis electromagnetic lens 122 (that is, the focal length of the lens opening 121) is f2, the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 1
22 is provided with a distance that is the sum of f1 and f2. The object point of the first electromagnetic lens system 124 is at the focal position (that is, the focal plane B2) of the third multi-axis electromagnetic lens 120, and
The image point of the electromagnetic lens system 124 is the fourth multi-axis electromagnetic lens 12
The focus position is 2 (that is, the focal plane B3). And the first
The electromagnetic lens system 124 reduces the cross sections of the plurality of electron beams to f2 / f1.

Further, it is desirable that the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 122 form magnetic fields acting in opposite directions. Third multi-axis electromagnetic lens 120
The fourth multi-axis electromagnetic lens 122 has a coil wound around the optical axis A as a center. The lens opening 119 of the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 122 form a magnetic field substantially parallel to the optical axis A. When the lens opening 119 of the third multi-axis electromagnetic lens 120 forms a magnetic field in the first direction substantially parallel to the optical axis A, the lens opening 121 of the fourth multi-axis electromagnetic lens 122 is aligned with the first direction. It is desirable to create a magnetic field in the second direction of light, which is generally in the opposite direction. By forming a magnetic field in which the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 122 act in opposite directions, aberration of the electron beam generated by the optical system can be reduced. In particular, it is possible to reduce chromatic aberration, rotation, etc. related to magnification.

The rotation / magnification correction lens system 125 includes a first rotation / magnification correction lens 125a, a second rotation / magnification correction lens 125b, and a third rotation / magnification correction lens 125c.
And the fourth rotation / magnification correction lens 125d and the fifth rotation /
It has a magnification correction lens 125e. First rotation / magnification correction lens 125a, second rotation / magnification correction lens 125
b, the third rotation / magnification correction lens 125c, the fourth rotation / magnification correction lens 125d, and the fifth rotation / magnification correction lens 125e are preferably electrostatic lenses, and more preferably unipotential lenses.

First rotation / magnification correction lens 125a, second
The rotation / magnification correction lens 125b, the third rotation / magnification correction lens 125c, the fourth rotation / magnification correction lens 125d, and the fifth rotation / magnification correction lens 125e are provided between the focal plane B2 and the focal plane B3. Is desirable. Also,
The lens axis of the first rotation / magnification correction lens 125a and the second
The lens axis of the rotation / magnification correction lens 125b, the lens axis of the third rotation / magnification correction lens 125c, the lens axis of the fourth rotation / magnification correction lens 125d, and the lens axis of the fifth rotation / magnification correction lens 125e. Are preferably on substantially the same straight line.

The second rotation / magnification correction lens 125b includes a first multi-axis electromagnetic lens 112, a second multi-axis electromagnetic lens 114,
Third multi-axis electromagnetic lens 120, fourth multi-axis electromagnetic lens 12
2, the optical axis A of the electron beam by at least one of the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 128
Correct the rotation of the electron beam with respect to. Specifically, the second rotation / magnification correction lens 125b corrects the amount of rotation of the electron beam image on the wafer 146.

The second rotation / magnification correction lens 125b corrects the rotation of the electron beam passing through the second rotation / magnification correction lens 125b based on the irradiation position on the wafer 146 (that is, the focal plane B4). To do. Further, the second rotation / magnification correction lens 125b may correct the rotation of the electron beam based on the passing position of the electron beam passing through the second rotation / magnification correction lens 125b on the focal plane B2. Also, the second rotation / magnification correction lens 125b is
The rotation of the electron beam passing through b may be corrected based on the passing position in the third multi-axis electromagnetic lens 120. In addition, the second rotation / magnification correction lens 125
b is the lens opening 119 of the third multi-axis electromagnetic lens 120.
The rotation of the electron beam may be corrected based on the strength of the magnetic field formed by.

The second rotation / magnification correction lens 125b is preferably provided in the magnetic field formed by the lens opening 119 of the third multi-axis electromagnetic lens 120. Further, the second rotation / magnification correction lens 125b is preferably provided at a position substantially the same as the third electromagnetic lens 120 in the electron beam irradiation direction. That is, the second rotation / magnification correction lens 1
25b is the lens opening 1 of the third multi-axis electromagnetic lens 120.
It is preferable to be provided at the center of the 19 lens. By providing the second rotation / magnification correction lens 125b at the lens center of the lens opening 119, the rotation of the electron beam on the wafer 146 can be efficiently corrected.

The first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 125c correct the magnification (that is, reduction ratio) of the electron beam by the second rotation / magnification correction lens 125b. Specifically, the first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 125c are
The size of the electron beam image on the wafer 146 is corrected. In addition, the first rotation / magnification correction lens 125a and the third
The rotation / magnification correction lens 125c includes a first multi-axis electromagnetic lens 112, a second multi-axis electromagnetic lens 114, a third multi-axis electromagnetic lens 120, a fourth multi-axis electromagnetic lens 122, a fifth multi-axis electromagnetic lens 126, and a fifth multi-axis electromagnetic lens 126. The rotation of the electron beam by at least one of the six-multiaxial electromagnetic lens 128 may be corrected.

The first rotation / magnification correction lens 125a corrects the magnification of the electron beam passing through the first rotation / magnification correction lens 125a based on the irradiation position of the electron beam on the wafer 146 (that is, the focal plane B4). To do. Further, the first rotation / magnification correction lens 125a may correct the magnification of the electron beam based on the passing position of the electron beam passing through the first rotation / magnification correction lens 125a on the focal plane B2. Further, the first rotation / magnification correction lens 125a is the same as the first rotation / magnification correction lens 125a.
The magnification of the electron beam passing through a may be corrected based on the passing position of the electron beam in the third multi-axis electromagnetic lens 120. In addition, the first rotation / magnification correction lens 125
a is the lens opening 119 of the third multi-axis electromagnetic lens 120.
The rotation of the electron beam may be corrected based on the strength of the magnetic field formed by.

The third rotation / magnification correction lens 125c corrects the magnification of the electron beam passing through the third rotation / magnification correction lens 125c based on the irradiation position on the wafer 146 (that is, the focal plane B4). To do. Further, the third rotation / magnification correction lens 125c may correct the magnification of the electron beam based on the passing position of the electron beam passing through the third rotation / magnification correction lens 125c on the focal plane B2. In addition, the third rotation / magnification correction lens 125c is the third rotation / magnification correction lens 125c.
The magnification of the electron beam passing through c may be corrected based on the passing position in the third multi-axis electromagnetic lens 120. In addition, the third rotation / magnification correction lens 125
c is the lens opening 119 of the third multi-axis electromagnetic lens 120.
The rotation of the electron beam may be corrected based on the strength of the magnetic field formed by.

The first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 125c are preferably provided in the magnetic field formed by the lens opening 119 of the third multi-axis electromagnetic lens 120. The first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 125c are
It is preferable that the second rotation / magnification correction lens 125b is provided with its lens axis substantially at the center. In addition, the first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 12
5c is preferably provided at a position opposed to the second rotation / magnification correction lens 125b.

In this example, the second rotation / magnification correction lens 125b corrects the rotation of the electron beam, and the first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 1 are used.
25c corrects the electron beam magnification, but in another example, the second rotation / magnification correction lens 125b corrects the electron beam magnification, and the first rotation / magnification correction lens 125a and the third rotation / magnification correction lens 125a. 125c may correct the rotation of the electron beam.

The fifth rotation / magnification correction lens 125e includes a first multi-axis electromagnetic lens 112, a second multi-axis electromagnetic lens 114,
Third multi-axis electromagnetic lens 120, fourth multi-axis electromagnetic lens 12
2, the optical axis A of the electron beam by at least one of the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 128
Correct the rotation of the electron beam with respect to. Specifically, the fifth rotation / magnification correction lens 125e corrects the rotation amount of the electron beam image on the wafer 146.

The fifth rotation / magnification correction lens 125e corrects the rotation of the electron beam passing through the fifth rotation / magnification correction lens 125e based on the irradiation position on the wafer 146 (that is, the focal plane B4). To do. The fifth rotation / magnification correction lens 125e may correct the rotation of the electron beam passing through the fifth rotation / magnification correction lens 125e based on the passing position on the focal plane B2. In addition, the fifth rotation / magnification correction lens 125e is the fifth rotation / magnification correction lens 125e.
The rotation of the electron beam passing through e may be corrected based on the passing position in the fourth multi-axis electromagnetic lens 122. Also, the fifth rotation / magnification correction lens 125
e is the lens opening 121 of the fourth multi-axis electromagnetic lens 122.
The rotation of the electron beam may be corrected based on the strength of the magnetic field formed by.

The fifth rotation / magnification correction lens 125e is preferably provided in the magnetic field formed by the lens opening 121 of the fourth multi-axis electromagnetic lens 122. Further, it is preferable that the fifth rotation / magnification correction lens 125e is provided at a position substantially equal to the fourth electromagnetic lens 122 in the electron beam irradiation direction. That is, the fifth rotation / magnification correction lens 1
25e is the lens opening 1 of the fourth multi-axis electromagnetic lens 122.
21 is preferably provided at the center of the lens. Since the fifth rotation / magnification correction lens 125e is provided at the lens center of the lens opening 121, the rotation of the electron beam on the wafer 146 can be efficiently corrected.

The fourth rotation / magnification correction lens 125d corrects the magnification of the electron beam passing through the fourth rotation / magnification correction lens 125d based on the irradiation position on the wafer 146 (that is, the focal plane B4). To do. Further, the fourth rotation / magnification correction lens 125d may correct the magnification of the electron beam based on the passing position of the electron beam passing through the fourth rotation / magnification correction lens 125d on the focal plane B2. Further, the fourth rotation / magnification correction lens 125d is
The magnification of the electron beam passing through d may be corrected based on the passing position in the fourth multi-axis electromagnetic lens 122. Also, the fourth rotation / magnification correction lens 125
d is the lens opening 119 of the fourth multi-axis electromagnetic lens 122.
The rotation of the electron beam may be corrected based on the strength of the magnetic field formed by.

The fourth rotation / magnification correction lens 125d is an electron beam passing through the focal position C1 of the fourth multi-axis electromagnetic lens 122 (that is, the focus position of the lens opening 119), that is, the fourth rotation / magnification correction lens 125d. Preferably, the crossover position of the image is substantially centered. In addition, the fourth rotation / magnification correction lens 125d
It is preferable that the magnification correction lens 125e is provided with its lens axis substantially at the center. Fourth rotation / magnification correction lens 12
Since 5d is provided with the crossover position of the image of the electron beam as substantially the center, the magnification of the electron beam on the wafer 146 can be efficiently corrected.

A first rotation / magnification correction lens 125a, a second rotation / magnification correction lens 125b, and a third rotation / magnification correction lens 1 provided near the third multi-axis electromagnetic lens 120.
In the doublet where the correction effects may be canceled by making the arrangement of 25c different from the arrangement of the fourth rotation / magnification correction lens 125d and the fifth rotation / magnification correction lens 125e provided near the fourth electromagnetic lens 122. Also, the rotation and magnification of the electron beam can be corrected.

In the present example, the fifth rotation / magnification correction lens 125e corrects the rotation of the electron beam, and the fourth rotation / magnification correction lens 125d corrects the magnification of the electron beam. In other examples, 5 rotation / magnification correction lens 12
5e may correct the electron beam magnification, and the fourth rotation / magnification correction lens 125d may correct the electron beam rotation.

The second electromagnetic lens system 130 has a fifth multi-axis electromagnetic lens 126 and a sixth multi-axis electromagnetic lens 128.
The fifth multi-axis electromagnetic lens 126 has a plurality of lens openings 123 through which a plurality of electron beams pass, respectively. Further, the sixth multi-axis electromagnetic lens 128 has a lens opening 127 through which a plurality of electron beams respectively pass.

The second electromagnetic lens system 130 is a doublet in which the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 128 are arranged side by side in the direction of the optical axis A. In other words, the second electromagnetic lens system 130 includes the fifth multi-axis electromagnetic lens 1
It has a plurality of doublets constituted by a plurality of 26 lens openings 123 and a plurality of lens openings 127 of the sixth multi-axis electromagnetic lens 128. Fifth multi-axis electromagnetic lens 1
26 focal length (ie focal length of lens aperture 123)
Is f3, and the focal length of the sixth multi-axis electromagnetic lens 128 (that is, the focal length of the lens opening 127) is f4, the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 1
28 is provided so as to be separated by a distance obtained by adding f3 and f4. The object point of the second electromagnetic lens system 130 is at the focal position of the fifth multi-axis electromagnetic lens 126 (that is, the focal plane B3), and
The image point of the electromagnetic lens system 130 is the sixth multi-axis electromagnetic lens 12
The focus position is 8 (that is, the focal plane B4). And the second
The electromagnetic lens system 130 reduces the cross sections of the plurality of electron beams to f4 / f3, respectively.

Further, it is desirable that the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 128 form magnetic fields acting in mutually opposite directions. Fifth multi-axis electromagnetic lens 126
The sixth multi-axis electromagnetic lens 128 has a coil wound around the optical axis A as a center. The lens opening 123 of the fifth multi-axis electromagnetic lens 126 and the sixth multi-axis electromagnetic lens 127 form a magnetic field substantially parallel to the optical axis A. When the lens opening 119 of the third electromagnetic lens 120 forms a magnetic field in the first direction, it is desirable that the lens opening 123 of the fifth electromagnetic lens 126 forms a magnetic field in the second direction. Furthermore, when the lens opening 123 of the fifth multi-axis electromagnetic lens 126 forms a magnetic field in the second direction, the lens opening 127 of the sixth multi-axis electromagnetic lens 128 forms a magnetic field in the second direction. Is desirable. Fifth multi-axis electromagnetic lens 1
26 and the sixth multi-axis electromagnetic lens 128 form a magnetic field acting in opposite directions, so that the aberration of the electron beam caused by the optical system can be reduced. In particular, it is possible to reduce chromatic aberration, rotation, etc. related to magnification.

The deflection system 142 includes a sub deflector 136 and a first deflector 136.
It has a main deflector 138 and a second main deflector 140. The first main deflector 138 and the second main deflector are used to deflect the electron beam between subfields including a plurality of regions (shot regions) that can be irradiated with one shot electron beam. Further, the sub deflector 136 has a smaller deflection amount than the first main deflector 138 and the second main deflector 140, and is used for deflecting between shot areas in a subfield. The sub-deflector 136, the first main deflector 138, and the second main deflector 140 are preferably multipolar cylindrical electrodes having eight or more electrodes, and have a unipotential lens effect depending on the applied signal polarity. It is preferable.

The deflection system 142 includes a focal plane B3 and a focal plane B4.
It is desirable to be provided between the surface of the wafer 146 and the surface of the wafer 146. Further, the first main deflector 138 is configured so that the focal position C2 of the sixth multi-axis electromagnetic lens 128 (that is, the lens opening 127).
It is preferable that the center position be substantially the center position of the electron beam image passing through the first main deflector 138. In addition, the first main deflector 138
Performs astigmatism correction of the electron beam, and the second main deflector 140
May perform electron beam focus correction.

The focal plane B2 is between the electron gun 110 and the wafer 146, and the focal plane B3 is between the focal plane B2 and the wafer 146. Also, focal plane B1 and focal plane B
2, the focal plane B3, and the focal plane B4 are substantially perpendicular to the optical axis A.

The control system 200 includes an integrated control unit 202 and an individual control unit 204. The integrated control unit 202 is, for example, a workstation, and comprehensively manages each control unit included in the individual control unit 204. The individual control unit 204
An irradiation electron optical system control unit 206, a correction electron optical system control unit 208, a rotation / magnification correction lens system control unit 210, an electromagnetic lens system control unit 212, a deflection system control unit 216, and a reflection electron processing unit 218, Wafer stage controller 220.

The irradiation electron optical system control unit 206 controls the power supplied to the first multi-axis electromagnetic lens 112 and the second multi-axis electromagnetic lens 114 included in the irradiation electron optical system 116. The irradiation electron optical system control unit 206 includes the first multi-axis electromagnetic lens 11
By individually adjusting the electric power supplied to each of the second and second multi-axis electromagnetic lenses 114, the cross sections of the plurality of electron beams imaged on the focal plane B2 are enlarged,
Further, a plurality of electron beams are made to enter the correction electron optical system 118 substantially vertically.

The correction electron optical system controller 208 controls a plurality of correction electron optical systems 118 having an aperture array, a blanker array, an electromagnetic lens array, and a stopper array. Specifically, the correction electron optical system control unit 208
The voltage applied to each of the blanking electrodes of the blanker array is controlled. Further, the correction electron optical system control unit 208 controls the power supplied to each of the plurality of electromagnetic lenses of the electromagnetic lens array.

The rotation / magnification correction lens system controller 210
A plurality of first rotation / magnification correction lenses 125a and a plurality of second
Rotation / magnification correction lens 125b, multiple third rotation / magnification correction lenses 125c, multiple fourth rotation / magnification correction lenses 125d, and multiple fifth rotation / magnification correction lenses 125.
The voltage applied to e is controlled respectively. The rotation / magnification correction lens system control unit 210 adjusts the plurality of rotation / magnification correction lens systems 125 so that each of the plurality of electron beams has a cross-sectional shape of a desired orientation and a desired size. Irradiate 146.

The electromagnetic lens system controller 212 includes a first multi-axis electromagnetic lens 112, a second multi-axis electromagnetic lens 114, a third multi-axis electromagnetic lens 120, a fourth multi-axis electromagnetic lens 122, and a fifth multi-axis electromagnetic lens 126. , And the electric power supplied to the sixth multi-axis electromagnetic lens 128. Specifically, the electromagnetic lens system controller 212 controls the third multi-axis electromagnetic lens 120 and the fourth multi-axis electromagnetic lens 122 so as to form a doublet.
The amount of current supplied to the coil of the multi-axis electromagnetic lens 120 and the coil of the fourth multi-axis electromagnetic lens 122 is adjusted. Further, the electromagnetic lens system control unit 212 controls the fifth multi-axis electromagnetic lens 126.
The amount of current supplied to the coil of the fifth multi-axis electromagnetic lens 126 and the coil of the sixth multi-axis electromagnetic lens 128 is adjusted so that and the sixth multi-axis electromagnetic lens 128 form a doublet.

The deflection system control unit 216 includes a plurality of sub-deflectors 1
36, the plurality of first main deflectors 138, and the plurality of second main deflectors 140 respectively control the deflection amounts of the plurality of electron beams. Further, the deflection system control unit 216 may control the first main deflector 138 so that the first main deflector 138 performs astigmatism correction of the electron beam. Further, the deflection system control unit 216 may control the voltage applied to the first main deflector 138 so that the first main deflector 138 performs astigmatism correction of the electron beam. In addition, the deflection system control unit 216
The voltage applied to the second main deflector 140 may be controlled so that the second main deflector 140 corrects the focus of the electron beam.

The backscattered electron processing unit 218 detects digital data indicating the amount of electrons based on the electric signal detected by the backscattered electron detection unit 144 and notifies the integrated control unit 202. The wafer stage controller 220 uses the wafer stage 1
Move 48 to the desired position.

FIG. 2 shows a top view of the first multi-axis electromagnetic lens 112 according to this embodiment. The second multi-axis electromagnetic lens 114, the third multi-axis electromagnetic lens 120, the fourth multi-axis electromagnetic lens 122, the fifth multi-axis electromagnetic lens 126, and the sixth multi-axis electromagnetic lens 128 included in the electron beam exposure apparatus 10 are also included. , First
It is preferable to have the same configuration as the multi-axis electromagnetic lens 16.

The first multi-axis electron lens 112 includes the coil unit 4
00 and a lens unit 402. The lens unit 402 is
A lens opening 111 through which the electron beam passes, and a lens area 4 which is a predetermined area including the lens opening 111
Has 06. The coil part 400 is provided around the lens part 402 and generates a magnetic field. Then, the plurality of lens openings 111 each generate a magnetic field to form a lens. The plurality of lens openings 111 through which the plurality of electron beams respectively pass are arranged corresponding to the positions of the plurality of sub deflectors 136, the plurality of first main deflectors 138, and / or the plurality of second main deflectors 140. Preferably. In addition, the lens portion 402 may have a plurality of dummy openings, through which the electron beam does not pass, on the outer periphery of the lens region 406 so that the magnetic fields formed by the plurality of lens openings 111 are made uniform.

FIG. 3 is a sectional view of the first multi-axis electromagnetic lens 112 according to this embodiment. The second multi-axis electromagnetic lens 114, the third multi-axis electromagnetic lens 120, the fourth multi-axis electromagnetic lens 122, the fifth multi-axis electromagnetic lens 126, and the sixth multi-axis electromagnetic lens 128 included in the electron beam exposure apparatus 10 are also included. , First
It is preferable to have the same configuration as the multi-axis electromagnetic lens 16.

The coil portion 400 includes a coil portion magnetic conductor member 401 which is a magnetic conductor member and a coil 4 which generates a magnetic field.
I have 03. In addition, the lens portion 402 has a first lens portion magnetic conductor member 404 and a second lens portion biasing conductor member 405 which are magnetic conductor members. Then, the first lens portion magnetic conductor member 404 and the second lens portion magnetic conductor member 40.
A plurality of lens openings 111 of 5 form a lens through which the electron beam passes. In the lens opening 111,
A magnetic field is formed by the first lens portion magnetic conductor member 404 and the second lens portion magnetic conductor member 405. The electron beams that have respectively entered the plurality of lens openings 111 are affected by the magnetic fields generated by the first lens portion magnetic conductor member 404 and the second lens portion magnetic conductor member 405, and are independently focused.

FIG. 4 shows an example of the configuration of the correction electron optical system 118 according to this embodiment. The correction electron optical system 118 is
Aperture array 300, X direction blanker array 30
2, Y-direction bunker array 304, electromagnetic lens array 3
06 and a stopper array 308.

In the aperture array 300, a plurality of apertures that define the cross-sectional shape of the electron beam are formed in the substrate, and the electron beam incident on the correction electron optical system 118 substantially perpendicularly is divided into a plurality of divided electron beams. 310a, 310
b, 310c ... The X-direction blanker array 302 has a plurality of individual deflectors, and deflects each of the plurality of split electron beams split by the aperture array 300 in the X-direction. The Y-direction blanker array 304 has a plurality of minute deflectors, and deflects each of the plurality of divided electron beams divided by the aperture array 300 in the Y direction.

The electromagnetic lens array 306 has a plurality of electrostatic lenses and focuses each of the plurality of split electron beams that have passed through the X-direction blanker array 302 and the Y-direction blanker array 304. The electromagnetic lens array 306 independently focuses each of the plurality of divided electron beams, and adjusts the focal position of each of the plurality of divided electron beams, so that the first electromagnetic lens system 124 and / or the second electromagnetic lens system 130. Corrects distortion due to. Stopper array 3
Reference numeral 08 denotes a substrate having a plurality of openings formed therein, and blocks the split electron beam deflected by the X-direction blanker array 302 and / or the Y-direction blanker array 304.
Like the divided electron beam 310b, the divided electron beam deflected in the X direction by the X-direction blanker array 302 does not pass through the stopper array 308 and is blocked from entering the wafer 146. Further, like the divided electron beams 310 a and 310 c, the divided electron beams not deflected by the X-direction blanker array 302 and the Y-direction blanker array 304 pass through the stopper array 308 and are incident on the wafer 146.

The operation of the electron beam exposure apparatus 10 according to this embodiment will be described below with reference to FIGS. 1, 2, 3, and 4. A wafer 146 to be exposed is placed on the wafer stage 148. The wafer stage controller 220 moves the wafer stage 148 so that the region of the wafer 146 to be exposed is located near the optical axis A. In addition, since the electron gun 110 always irradiates the electron beam during the exposure process, the X-direction blanker array 302 and / or the Y-direction blanker array 304 prevents the wafer 146 from being irradiated with the electron beam before the exposure is started. Deflect the beam.

The irradiation electron optical system control unit 206 causes the first multi-axis electromagnetic lens 11 to make a plurality of electron beams incident on the desired regions of the correction electron optical system 118 substantially vertically.
The second and second multi-axis electromagnetic lenses 114 are adjusted. The correction electron optical system control unit 208 includes a plurality of electrostatic lenses of the electromagnetic lens array 306 included in each of the correction electron optical systems 118 so that each of the plurality of divided electron beams has a desired imaging condition. Adjust. The rotation / magnification correction lens system control unit 210 causes each of the plurality of electron beams having the plurality of divided electron beams to have a cross-sectional shape of a desired orientation and a desired size on the wafer 146.
A plurality of first rotation / magnification correction lenses 125a and a plurality of second
Rotation / magnification correction lens 125b, multiple third rotation / magnification correction lenses 125c, multiple fourth rotation / magnification correction lenses 125d, and multiple fifth rotation / magnification correction lenses 125.
Adjust e respectively. The electromagnetic lens system controller 212 is
The first multi-axis electromagnetic lens 120, the second multi-axis electromagnetic lens 122, so that each of the plurality of electron beams has a desired orientation and a desired cross-sectional shape on the wafer 146.
Third multi-axis electromagnetic lens 126 and fourth multi-axis electromagnetic lens 1
Adjust 28. The deflection system control unit 216 controls the wafer 146.
In order to irradiate multiple electron beams to the desired area of
The plurality of sub-deflectors 136, the plurality of first main deflectors 138, and the plurality of second main deflectors 140 are respectively adjusted.

Irradiation electron optical system 116, correction electron optical system 1
18, the first electromagnetic lens system 124, the plurality of rotation / magnification correction lens systems 125, the second electromagnetic lens system 130, and the plurality of deflection systems 142 are adjusted, and then the plurality of correction electron optical systems 1
Deflection of the electron beam by the X-direction blanker array 302 and / or the Y-direction blanker array 304 is stopped. Thereby, as shown below, a plurality of electron beams are applied to the wafer 146.

First, the irradiation electron optical system 116 enlarges the cross sections of a plurality of electron beams generated by a plurality of electron guns 110, respectively, and adjusts the focal position to a plurality of correction electron optical systems 1.
18 to adjust a plurality of correction electron optical systems 118.
Irradiate each of the predetermined regions of each of the above substantially vertically. And
In the plurality of correction electron optical systems 118, the aperture array 300 divides the electron beam into a plurality of divided electron beams and forms the cross section into a rectangular shape. Then, the X-direction blanker array 302 and / or the Y-direction blanker array 304
Switches whether to irradiate the wafer 146 by applying a voltage to each of the plurality of blanking electrodes. The split electron beam that is not deflected by the X-direction blanker array 302 and / or the Y-direction blanker array 304 is focused by the electromagnetic lens array 306 and passes through the opening of the stopper array 308. The split electron beam deflected by the X-direction blanker array 302 and / or the Y-direction blanker array 304 cannot pass through the opening of the stopper array 308 after the focus is adjusted by the electromagnetic lens array 306, and the stop array 30
Shut off at 8.

Next, the first electromagnetic lens system 124 reduces the electron beams having the plurality of split electron beams that have passed through the plurality of correction electron optical systems 118, respectively. The plurality of rotation / magnification correction lens systems 125 rotate the electron beam with respect to the optical axis A generated when the first electromagnetic lens system 124 and the second electromagnetic lens system 130 rotate and reduce the plurality of electron beams, respectively. And / or the electron beam magnification (that is, reduction rate) is corrected.

Next, the second electromagnetic lens system 130 reduces each of the plurality of electron beams reduced by the first electromagnetic lens system 124, and adjusts so that the wafer 146 is focused.
Further, the deflection system 142 deflects the electron beam by the sub-deflector 136, the first main deflector 138, and the second main deflector 140 so that a predetermined shot area on the wafer 146 is irradiated with the electron beam. Then, the plurality of electron beams form the wafer 146.
Respectively, and the pattern image of the opening of the aperture array 300 is transferred to a predetermined shot area on the wafer 146. Through the above process, a pattern having the shape of the opening of the aperture array 300 is exposed in a predetermined shot area on the wafer 146.

Electron beam exposure apparatus 10 according to this embodiment
According to this, a plurality of rotation / correction lenses (first rotation / magnification correction lens 125a, second rotation / magnification correction lens 125a,
b, the third rotation / magnification correction lens 125c, the fourth rotation / magnification correction lens 125d, and the fifth rotation / magnification correction lens 125e) rotate the electron beam by the first electromagnetic lens system 124 and the second electromagnetic lens system 130. , The static error amount such as magnification is corrected, so the rotation of the electron beam, the magnification,
Aberration and the like can be accurately corrected. Further, since the rotation / correction lens system 125 is provided for each electron beam,
It is possible to accurately correct the rotation, magnification, aberration, etc. of each of the plurality of electron beams.

The electron beam exposure apparatus 1 according to the present invention.
0 may be an electron beam exposure apparatus using a variable rectangle or an electron beam exposure apparatus using a blanking aperture array device. The electron beam exposure apparatus 10 is an example of the electron beam processing apparatus according to the present invention. The electron beam processing apparatus according to the present invention may be an electron microscope, an electron beam tester or the like in addition to the electron beam exposure apparatus.

Although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. Various changes or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

[0078]

As is apparent from the above description, according to the present invention, it is possible to provide an electron beam exposure apparatus that exposes a pattern on a wafer with a plurality of electron beams with high precision.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a configuration of an electron beam exposure apparatus 10 according to an embodiment of the present invention.

FIG. 2 is a top view of a first electromagnetic lens 112 according to this embodiment.

FIG. 3 is a cross-sectional view of a first electromagnetic lens 112 according to this embodiment.

FIG. 4 is a diagram showing an example of a configuration of a correction electron optical system 118 according to the present embodiment.

[Explanation of symbols]

10 ... Electron beam exposure apparatus, 100 ... Exposure unit,
102 ... Casing, 104 ... Cathode, 106 ...
-Grid, 108 ... Anode, 110 ... Electron gun, 111 ... First lens opening, 112 ... First
Multi-axis electromagnetic lens, 113 ... Second lens opening, 11
4 ... second multi-axis electromagnetic lens, 116 ... irradiation electron optical system, 118 ... correction electron optical system, 119 ... third
Lens opening, 120 ... Third multi-axis electromagnetic lens, 12
1 ... 4th lens opening part, 122 ... 4th multi-axis electromagnetic lens, 123 ... 5th lens opening part, 124 ...
First electromagnetic lens system, 125 ... Rotation / magnification correction lens system, 125a ... First rotation / magnification correction lens, 125
b ... 2nd rotation / magnification correction lens, 125c ... 3rd rotation / magnification correction lens, 125d ... 4th rotation / magnification correction lens, 125e ... 5th rotation / magnification correction lens, 126 ... .... Fifth multi-axis electromagnetic lens, 127 ... Sixth lens opening, 128 ... Sixth multi-axis electromagnetic lens, 1
30 ... Second electromagnetic lens system, 136 ... Sub-deflector,
138 ... First main deflector, 140 ... Second main deflector, 142 ... Deflection system, 144 ... Backscattered electron detector, 146 ... Wafer, 148 ... Wafer stage, 200 ... Control system, 202 ... General control unit, 2
04 ... Individual control unit, 206 ... Irradiation electron optical system control unit, 208 ... Correction electron optical system control unit, 210 ...
Rotation / magnification correction lens system control unit, 212 ... Electromagnetic lens system control unit, 216 ... Deflection system control unit, 218 ...
Reflection electron processing unit, 220 ... Wafer stage control unit, 300 ... Aperture array, 302 ... X direction blanker array, 304 ... Y direction blanker array, 306 ... Electromagnetic lens array, 308. ..Stopper array, 310a ... Split electron beam, 310b
... split electron beam, 310c ... split electron beam, 400 ... coil portion, 401 ... coil portion magnetic conductor member, 402 ... lens portion, 403 ... coil, 404 ... 1st part magnetic conductor member, 405 ... 2nd part magnetic conductor member, 406 ... lens area

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/30 541A 541D (72) Inventor Shinichi Hamaguchi 1-32-1 Asahimachi, Nerima-ku, Tokyo Stocks Company Advantest (72) Inventor Susumu Goto 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Yasunari Hayata 1-280, Higashikoigakubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory F-term (reference) 2H097 CA16 LA10 5C033 DE07 JJ01 JJ05 5C034 BB02 BB08 5F056 AA07 AA33 BA08 BB01 BD02 CB18 CB29 CB30 CB40 EA03 EA04 EA05 EA08

Claims (34)

[Claims] 1. An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, wherein the plurality of electron beams incident substantially perpendicular to a first surface are respectively substantially perpendicular to a second surface. A first electromagnetic lens system that is made incident on the wafer, a second electromagnetic lens system that makes the plurality of electron beams made substantially perpendicular to the second surface enter the wafer, respectively, and An electron beam exposure apparatus comprising: a plurality of first rotation correction lenses that respectively correct the rotations of the plurality of electron beams by an electromagnetic lens system and / or the second electromagnetic lens system. 2. The first electromagnetic lens system reduces each of the plurality of electron beams incident on the first surface and makes the electron beams incident on the second surface, and the second electromagnetic lens system is , The plurality of electron beams incident on the second surface are respectively reduced to generate the third electron beam.
The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is incident on the surface of the. 3. The first rotation correction lens corrects the rotation of the electron beam based on the irradiation position of the electron beam passing through the first rotation correction lens on the wafer. The electron beam exposure apparatus according to. 4. The first rotation correction lens corrects the rotation of the electron beam based on the passing position of the electron beam passing through the first rotation correction lens on the first surface. The electron beam exposure apparatus according to claim 1. 5. The electron beam exposure apparatus according to claim 1, wherein the first rotation correction lens is provided between the first surface and the second surface. 6. The electron beam exposure apparatus according to claim 1, further comprising a plurality of first magnification correction lenses that respectively correct magnifications of the plurality of electron beams. 7. The first magnification correction lens corrects the magnification of the electron beam based on the irradiation position of the electron beam passing through the first magnification correction lens on the wafer. The electron beam exposure apparatus according to. 8. The first magnification correction lens corrects the magnification of the electron beam based on the passing position of the electron beam passing through the first magnification correction lens on the first surface. The electron beam exposure apparatus according to claim 6. 9. The first magnification correction lens corrects the magnification of the electron beam by the rotation correction lens through which the electron beam passing through the first magnification correction lens passes. The electron beam exposure apparatus according to. 10. The first magnification correction lens is the first magnification correction lens.
An electromagnetic lens system and / or the second electromagnetic lens system,
7. The electron beam exposure apparatus according to claim 6, wherein the magnification of the electron beam is corrected. 11. The first magnification correction lens is the first magnification correction lens.
The electron beam exposure apparatus according to claim 6, wherein the electron beam exposure apparatus is provided between the second surface and the second surface. 12. The first electromagnetic lens system has a plurality of first lens apertures through which the plurality of electron beams pass, and a first multi-axis electromagnetic lens that independently focuses the plurality of electron beams. A second multi-axis electromagnetic lens having a plurality of second lens openings through which the plurality of electron beams pass, and independently focusing the plurality of electron beams, the second electromagnetic lens system comprising: A second multi-axis electromagnetic lens third electromagnetic lens having a plurality of third lens openings through which the plurality of electron beams pass, and independently focusing the plurality of electron beams; and a plurality of the electron beams passing therethrough. The electron beam exposure apparatus according to claim 1, further comprising: a second multi-axis electromagnetic lens and a fourth electromagnetic lens that individually focus the plurality of electron beams. . 13. The first multi-axis electromagnetic lens has a first focal length, the second multi-axis electromagnetic lens has a second focal length, and from the first multi-axis electromagnetic lens, The third multi-axis electromagnetic lens has a third focal length, and the third multi-axis electromagnetic lens has a third focal length, and the third multi-axis electromagnetic lens has a third focal length. The lens has a fourth focal length, and is provided at a distance from the third multi-axis electromagnetic lens that is substantially the sum of the third focal length and the fourth focal length. The electron beam exposure apparatus according to claim 12. 14. The first multi-axis electromagnetic lens forms a magnetic field in a first direction, and the second multi-axis electromagnetic lens moves in a second direction which is a direction substantially opposite to the first direction. Forming a magnetic field, the third multi-axis electromagnetic lens forming a magnetic field in the second direction, and the fourth multi-axis electromagnetic lens forming a magnetic field in the first direction. The electron beam exposure apparatus according to claim 12. 15. The first rotation correction lens is the second rotation correction lens.
The electron beam exposure apparatus according to claim 12, wherein the electron beam exposure apparatus is provided in a magnetic field formed by the second lens opening of the multi-axis electromagnetic lens. 16. The first rotation correction lens is the second rotation correction lens.
16. The rotation of the electron beam is corrected based on the strength of the magnetic field formed by the lens opening.
The electron beam exposure apparatus according to. 17. The first rotation correction lens is provided at substantially the same position as the second multi-axis electromagnetic lens in the irradiation direction of the electron beam.
The electron beam exposure apparatus according to. 18. A first magnification correction lens, which is provided with a lens axis of the first rotation correction lens substantially as a center and corrects a magnification of the electron beam by the first rotation correction lens. Item 13. The electron beam exposure apparatus according to item 12. 19. The first magnification correction lens is the second magnification correction lens.
The electron beam exposure apparatus according to claim 18, wherein the focus position of the multi-axis electromagnetic lens is provided substantially at the center. 20. The second rotation, which is provided with a lens axis of the first rotation correction lens substantially as a center and corrects rotation of the electron beam by the first electromagnetic lens system and / or the second electromagnetic lens system. The electron beam exposure apparatus according to claim 12, further comprising a correction lens. 21. The second rotation correction lens is the first rotation correction lens.
The electron beam exposure apparatus according to claim 20, wherein the electron beam exposure apparatus is provided in a magnetic field formed by the first lens opening of the multi-axis electromagnetic lens. 22. The second rotation correction lens is the first rotation correction lens.
22. The rotation of the electron beam is corrected based on the strength of the magnetic field formed by the lens opening.
The electron beam exposure apparatus according to. 23. The electron beam exposure apparatus according to claim 20, wherein the second rotation correction lens is provided at a position substantially equal to the first multi-axis electromagnetic lens in the irradiation direction of the electron beam. 24. A second magnification correction lens, which is provided with a lens axis of the second rotation correction lens substantially as a center, and which corrects the magnification of the electron beam by the second rotation correction lens. The electron beam exposure apparatus according to claim 20. 25. The second magnification correction lens comprises the first
The electron beam exposure apparatus according to claim 24, wherein the electron beam exposure apparatus is provided in a magnetic field formed by the first lens opening of the multi-axis electromagnetic lens. 26. A third magnification correction lens, which is provided with the lens axis of the second rotation correction lens substantially as a center, and which corrects the magnification of the electron beam by the second rotation correction lens, is further provided. The electron beam exposure apparatus according to claim 24. 27. The electron beam exposure according to claim 26, wherein the second magnification correction lens and the third magnification correction lens are provided at positions facing each other with the second rotation correction lens interposed therebetween. apparatus. 28. The first rotation correction lens is the second rotation correction lens.
The electron beam exposure apparatus according to claim 12, wherein the electron beam exposure apparatus is provided in a magnetic field formed by the second lens opening of the multi-axis electromagnetic lens. 29. A deflection system which is provided between the second surface and the third surface and which deflects the plurality of electron beams to positions on the wafer where the plurality of electron beams should be irradiated. The method according to claim 1, further comprising:
The electron beam exposure apparatus according to. 30. A plurality of electron guns that respectively generate the plurality of electron beams, and irradiation electron optics that makes the plurality of electron beams respectively generated by the plurality of electron guns incident substantially perpendicularly to the first surface. The electron beam exposure apparatus according to claim 1, further comprising a system. 31. The apparatus further comprises a plurality of correction electron optical systems that divide each of the plurality of electron beams incident substantially perpendicularly to the first surface into a plurality of electron beams. Item 31. The electron beam exposure apparatus according to Item 30. 32. An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, wherein the plurality of electron beams incident substantially perpendicular to a first surface are respectively substantially perpendicular to a second surface. A first electromagnetic lens system that is made incident on the wafer, a second electromagnetic lens system that makes the plurality of electron beams made substantially perpendicular to the second surface enter the wafer, respectively, and An electron beam exposure apparatus comprising: a plurality of first magnification correction lenses for respectively correcting magnifications of the plurality of electron beams by an electromagnetic lens system and / or the second electromagnetic lens system. 33. A first electromagnetic lens system for respectively injecting the plurality of electron beams, which are incident substantially perpendicularly to the first surface, substantially perpendicularly to the second surface, and to the second surface. A plurality of electron beams that are incident on the third surface substantially perpendicularly to the second surface.
An electron beam, comprising: an electromagnetic lens system; and a plurality of first rotation correction lenses that respectively correct rotations of the plurality of electron beams by the first electromagnetic lens system and / or the second electromagnetic lens system. Processing equipment. 34. A first electromagnetic lens system for respectively injecting the plurality of electron beams, which are incident substantially perpendicularly to the first surface, substantially perpendicularly to the second surface, and to the second surface. A plurality of electron beams that are incident on the third surface substantially perpendicularly to the second surface.
An electron beam, comprising: an electromagnetic lens system; and a plurality of first rotation correction lenses for respectively correcting magnifications of the plurality of electron beams by the first electromagnetic lens system and / or the second electromagnetic lens system. Processing equipment.