JP2006272818A - Liquid jet head manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a liquid jet head which can prevent foreign matter from blocking nozzles. <P>SOLUTION: The liquid jet head manufacturing method comprises the process of joining a reservoir forming substrate 30 in which a reservoir portion 31 is formed to a channel forming substrate 10 through an adhesive layer, the process of forming a pressure generation chamber 12 and a communication portion 13 by wet etching the channel forming substrate 10 from the other side, the process of removing a discontinuous metal layer 95 in the area opposite to a through hole 50a by wet etching for forming the reservoir 100 by making the reservoir portion 31 and the communication portion 13 communicate and the process of forming a protective film 15 made of a liquid resistant material in the internal wall surface of at least the reservoir 100, and implements the process of at least removing the eaves portion 35a of the adhesive layer 35 projecting into the reservoir portion 31 before the process of forming the protective film 15. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid ejecting head that ejects liquid, and more particularly, to a method for manufacturing an ink jet recording head that ejects ink as a liquid.

  As an ink jet recording head that is a liquid ejecting head, for example, a flow path forming substrate in which a pressure generation chamber communicating with a nozzle opening and a communication portion communicating with the pressure generation chamber are formed, and one of the flow path forming substrates is provided. Some include a piezoelectric element formed on the surface side, and a reservoir forming substrate having a reservoir portion that is joined to the surface of the flow path forming substrate on the piezoelectric element side and forms a part of the reservoir together with the communication portion. And this reservoir forms a penetration part by mechanically punching the diaphragm and the laminated film provided on this diaphragm, and makes the reservoir part and the communication part communicate with each other through this penetration part. It was formed (for example, refer to Patent Document 1).

  However, when the penetrating portion is formed by such mechanical processing, there is a problem that foreign matter such as machining residue is generated and the foreign matter enters a flow path such as a pressure generating chamber, which causes discharge failure and the like. In addition, after forming a penetration part, foreign substances, such as a processing residue, can be removed to some extent by performing washing etc., for example, but it is difficult to remove a foreign substance completely. Further, when the penetrating portion is mechanically processed, a crack or the like is generated around the penetrating portion, and there is a problem that a discharge failure occurs due to the occurrence of the crack. That is, when ink is filled in a cracked state and discharged from the nozzle opening, there is a problem in that a broken piece falls off from the cracked portion, and the broken piece is clogged in the nozzle opening to cause a discharge failure.

  Further, the flow path forming substrate and the reservoir forming substrate are generally bonded by an adhesive. The adhesive receives pressure from both the substrates and is cured, for example, in a state of protruding into the reservoir. In addition, a protective film made of an ink-resistant material is formed on the inner surface of the flow path of the reservoir or the like to prevent erosion by ink, and this protective film is formed on the surface of the adhesive that protrudes into the reservoir. Is also formed. However, since the thermal expansion coefficient of the protective film formed on the surface of the adhesive is greatly different from that of the protective film, the protective film is relatively easily peeled off due to a change in the environmental temperature, etc. There is a possibility that nozzle clogging or the like may occur due to the protective film.

  Such a problem exists not only in an ink jet recording head that ejects ink, but also in a method of manufacturing another liquid ejecting head that ejects liquid other than ink.

JP 2003-159801 A (FIGS. 7 to 8)

  In view of such circumstances, it is an object of the present invention to provide a method of manufacturing a liquid ejecting head that can reliably prevent ejection failure such as nozzle clogging due to foreign matter.

A first aspect of the present invention that solves the above problem is a flow path forming substrate that includes a pressure generation chamber that is formed of a silicon substrate and communicates with a nozzle opening that ejects liquid, and a communication portion that communicates with the pressure generation chamber. Forming a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode on one surface side through a vibration plate, removing the vibration plate in a region serving as the communication portion, and forming a through hole; and Forming a lead electrode drawn from the element and comprising the same layer as the lead electrode, but the lead electrode is sealed with the discontinuous metal layer and the through hole is communicated with the communicating portion; A step of bonding a reservoir forming substrate on which a reservoir portion constituting a part of the reservoir is formed to the one surface side of the flow path forming substrate via an adhesive layer; and wet etching the flow path forming substrate from the other surface side Forming the pressure generating chamber and the communication portion, and removing the discontinuous metal layer in a region facing the through hole by wet etching to cause the reservoir portion and the communication portion to communicate with each other. And forming a protective film made of a material having liquid resistance on at least the inner wall surface of the reservoir, and before the step of forming the protective film, the projecting into the reservoir portion In the method of manufacturing a liquid ejecting head, the method includes a removing step of removing at least a collar portion of the adhesive layer.
In the first aspect, the protective film can be satisfactorily formed on the inner wall of the reservoir without forming the protective film on the surface of the adhesive layer. Therefore, it is possible to prevent the protective film from being peeled off from the inner wall of the reservoir, and it is possible to prevent the occurrence of ejection failure such as nozzle clogging due to the peeled off protective film.

According to a second aspect of the present invention, in the first aspect, in the removing step, the flange portion is removed so that an end portion of the adhesive layer is located outside an edge portion of the through hole. The liquid jet head manufacturing method is characterized.
In the second aspect, it is possible to more reliably prevent the protective film from being formed on the surface of the adhesive layer.

According to a third aspect of the present invention, in the first or second aspect, the removal step is performed after the step of forming the reservoir.
In this 3rd aspect, since the collar part of an contact bonding layer is completely exposed, a collar part can be removed favorably in a short time.

According to a fourth aspect of the present invention, in the third aspect, in the removing step, the flange is removed from the communication portion side in the removing step.
In the fourth aspect, the region from which the adhesive layer is removed can be adjusted relatively easily.

According to a fifth aspect of the present invention, in the liquid jet head manufacturing method according to any one of the first to fourth aspects, the flange is removed by dry etching.
In the fifth aspect, the flange portion of the adhesive layer can be removed relatively easily in a short time.

According to a sixth aspect of the present invention, in any one of the first to fifth aspects, a tantalum oxide is used as a material for the protective film.
In the sixth aspect, it is possible to more reliably prevent the flow path forming substrate and the reservoir forming substrate from being eroded by the liquid supplied inside the reservoir or the like.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
1 is an exploded perspective view showing an ink jet recording head manufactured by a manufacturing method according to Embodiment 1 of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG. As shown in the figure, the flow path forming substrate 10 is formed of a silicon single crystal substrate having a plane orientation (110) in this embodiment, and one surface thereof is previously formed of silicon dioxide by thermal oxidation to a thickness of 0.5 to 2 μm. The elastic film 50 is formed.

  A plurality of pressure generating chambers 12 are arranged in parallel in the width direction of the flow path forming substrate 10. In addition, a communication portion 13 is formed in a region on the outer side in the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and each pressure generation chamber communicates with the communication portion 13 via the ink supply path 14. The communication part 13 communicates with a reservoir part 31 of a reservoir forming substrate 30 to be described later and constitutes a part of the reservoir 100 serving as a common ink chamber for each pressure generating chamber 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

Here, the flow path formed in the flow path forming substrate 10, in this embodiment, the inner wall surfaces of the pressure generation chamber 12, the communication portion 13, and the ink supply path 14 is made of a material having ink resistance, such as pentoxide. A protective film 15 made of tantalum oxide such as tantalum (Ta ₂ O ₅ ) is provided with a thickness of about 50 nm, for example. Here, the ink resistance refers to etching resistance against alkaline ink. In the present embodiment, the protective film 15 is also provided on the surface of the flow path forming substrate 10 on the side where the pressure generating chambers 12 and the like are open, that is, the bonding surface to which the nozzle plate 20 is bonded. Of course, since the ink is not substantially in contact with such a region, the protective film 15 may not be provided.

The material of the protective film 15 is not limited to tantalum oxide, and depending on the pH value of the ink used, for example, zirconium oxide (ZrO ₂ ), nickel (Ni), chromium (Cr), or the like is used. Also good.

Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive. Or a heat-welded film or the like. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 ⁻⁶ / ° C.], glass ceramics, silicon It consists of a single crystal substrate or stainless steel.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. For example, an insulator film 55 having a thickness of about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 A piezoelectric element 300 composed of an upper electrode film 80 of .05 μm is formed. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.

  A lead electrode 90 composed of an adhesion layer 91 and a metal layer 92 is connected to the upper electrode film 80 of each piezoelectric element 300, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. Is applied. As will be described in detail later, the same layer as the lead electrode 90, in this embodiment, the adhesion layer 91 and the elastic layer 50 and the insulator film 55 in the region corresponding to the peripheral edge of the opening of the communication portion 13 are also provided. A discontinuous metal layer 95 made of the metal layer 92 but discontinuous from the lead electrode 90 remains.

  On the surface of the flow path forming substrate 10 on the piezoelectric element 300 side, a reservoir forming substrate 30 having a reservoir portion 31 constituting at least a part of the reservoir 100 is an adhesive layer made of, for example, an epoxy-based adhesive. 35 is bonded. The reservoir portion 31 of the reservoir forming substrate 30 communicates with the communication portion 13 through through holes 50 a and 55 a provided in the elastic film 50 and the insulator film 55, and the reservoir 100 is formed by the reservoir portion 31 and the communication portion 13. Has been.

  In addition, a piezoelectric element holding portion 32 is provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30. Since the piezoelectric element 300 is formed in the piezoelectric element holding portion 32, the piezoelectric element 300 is protected in a state hardly affected by the external environment. In addition, the piezoelectric element holding | maintenance part 32 may be sealed and does not need to be sealed. Examples of the material of the reservoir forming substrate 30 include glass, ceramic material, metal, resin, and the like, but it is preferable that the reservoir forming substrate 30 be formed of a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  A connection wiring 200 formed in a predetermined pattern is provided on the reservoir forming substrate 30, and a driving IC 210 for driving the piezoelectric element 300 is mounted on the connection wiring 200. Then, the leading end portion of each lead electrode 90 drawn from each piezoelectric element 300 to the outside of the piezoelectric element holding portion 32 and the driving IC 210 are electrically connected via the driving wiring 220.

  Furthermore, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto a region corresponding to the reservoir portion 31 of the reservoir forming substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The sealing film 41 seals one surface of the reservoir unit 31. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then subjected to pressure according to a recording signal from the driving IC 210. By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the generation chamber 12 to bend and deform the piezoelectric element 300 and the diaphragm, the pressure in each pressure generation chamber 12 is increased. Ink is ejected from the opening 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 5 are sectional views in the longitudinal direction of the pressure generating chamber 12, and FIG. 6 is an enlarged sectional view in the vicinity of the reservoir.

  First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface thereof. To do. In this embodiment, a silicon wafer having a relatively thick film thickness of about 625 μm and a high rigidity is used as the flow path forming substrate wafer 110.

Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Specifically, after forming a zirconium (Zr) layer on the elastic film 50 (silicon dioxide film 51) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. Thus, the insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed.

  Next, as shown in FIG. 3C, after the lower electrode film 60 is formed by stacking platinum and iridium on the insulator film 55, for example, the lower electrode film 60 is patterned into a predetermined shape. Next, as shown in FIG. 3 (d), a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT) and an upper electrode film 80 made of, for example, iridium are connected to a wafer 110 for flow path forming substrate. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing the pressure generation chambers 12. In addition, after the piezoelectric element 300 is formed, the insulator film 55 and the elastic film 50 are patterned, and the insulator film 55 and the elastic film 50 in a region where a communication portion (not shown) of the flow path forming substrate wafer 110 is formed. To penetrate. That is, the insulating film 55 is etched to form the through hole 55a, and the elastic film 50 is further etched to form the through hole 50a. In the present embodiment, the through hole 55a of the insulator film 55 is formed to have an opening area larger than that of the through hole 50a of the elastic film 50. Of course, these through holes 50a and 55a may be formed in the same size.

Here, as a material of the piezoelectric layer 70 constituting the piezoelectric element 300, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), niobium, nickel, magnesium, bismuth, yttrium or the like is used. A relaxor ferroelectric or the like to which any of the above metals is added is used. The composition may be appropriately selected in consideration of the characteristics, use, etc. of the piezoelectric element 300. For example, PbTiO ₃ (PT), PbZrO ₃ (PZ), Pb (ZrxTi1-x) O ₃ (PZT), Pb (Mg _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PMN-PT), Pb (Zn _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PZN-PT), Pb (Ni _1/3 Nb _{2/3) O 3 -PbTiO3 (PNN-} PT), Pb (In 1/2 Nb 1/2) O 3 -PbTiO 3 (PIN-PT), Pb (Sc 1/3 Ta 2/3) O 3 - _{PbTiO 3 (PST-PT),} Pb (Sc 1/3 Nb 2/3) O 3 -PbTiO 3 (PSN-PT), BiScO 3 -PbTiO 3 (BS-PT), BiYbO 3 -PbTiO 3 (BY-P ), And the like.

  The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide. The piezoelectric layer 70 may be formed using, for example, a MOD (Metal-Organic Decomposition) method.

  Next, as shown in FIG. 4A, a metal layer 92 is formed through an adhesion layer 91 for ensuring adhesion over the entire surface of the flow path forming substrate wafer 110. For example, from a resist or the like. The lead electrode 90 is formed by patterning the metal layer 92 and the adhesion layer 91 for each piezoelectric element 300 through a mask pattern (not shown).

  At this time, the adhesion layer 91 and the metal layer 92 in the region corresponding to the through holes 50 a and 55 a are left discontinuous with the lead electrode 90. That is, a discontinuous metal layer 95 composed of an adhesive layer 91 discontinuous with the lead electrode 90 and a metal layer 92 is formed in at least a part of the region facing the through holes 50a and 55a. The through holes 50a and 55a are sealed. The discontinuous metal layer 95 plays a role of regulating the spread of etching when the pressure generating chamber 12 and the like are formed in the flow path forming substrate wafer 110 by etching in a process described later.

  The main material of the metal layer 92 constituting the lead electrode 90 is not particularly limited as long as the material is relatively highly conductive, and examples thereof include gold (Au), aluminum (Al), and copper (Cu). In this embodiment, gold (Au) is used. The material of the adhesion layer 91 may be any material that can ensure the adhesion of the metal layer 92. Specifically, titanium (Ti), titanium tungsten compound (TiW), nickel (Ni), chromium (Cr ) Or a nickel chromium compound (NiCr) or the like. In this embodiment, a nickel chromium compound (NiCr) is used.

  Next, as shown in FIG. 4B, the reservoir forming substrate wafer 130 is bonded onto the flow path forming substrate wafer 110 via an adhesive layer 35 made of, for example, an epoxy-based adhesive. At this time, since the adhesive layer 35 receives a certain amount of pressure from both substrates, the adhesive layer 35 is cured in a state of protruding from the end portions of both substrates, although not shown here. Naturally, the adhesive layer 35 is cured in a state of protruding into the reservoir portion 31.

  The reservoir forming substrate wafer 130 is preliminarily formed with a reservoir portion 31, a piezoelectric element holding portion 32, and the like, and the above-described connection wiring 200 is preliminarily formed on the reservoir forming substrate wafer 130.

  Next, as shown in FIG. 4C, after the flow path forming substrate wafer 110 is polished to a certain thickness, the flow path forming substrate wafer 110 is further etched to a predetermined thickness by wet etching with hydrofluoric acid. Say it. For example, in this embodiment, the flow path forming substrate wafer 110 is processed to have a thickness of about 70 μm by polishing and wet etching. Next, as shown in FIG. 5A, a mask film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, as shown in FIG. 5B, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 52, and the pressure generating chamber 12 is applied to the flow path forming substrate wafer 110. The communication part 13 and the ink supply path 14 are formed. That is, in a state where the through holes 50a and 55a are sealed with the discontinuous metal layer 95, the flow path forming substrate wafer 110 is etched with an etchant such as a potassium hydroxide (KOH) aqueous solution. Then, by etching the flow path forming substrate wafer 110 until the elastic film 50 and the discontinuous metal layer 95 are exposed, the pressure generating chamber 12, the communication portion 13, and the ink supply path 14 are formed simultaneously.

  At this time, since the through holes 50a and 55a are sealed by the discontinuous metal layer 95 including the adhesion layer 91 and the metal layer 92, the etching solution is supplied to the reservoir forming substrate wafer 130 side through the through holes 50a and 55a. There is no flow. As a result, the etching solution does not adhere to the connection wiring 200 provided on the surface of the reservoir forming substrate wafer 130, and the occurrence of defects such as disconnection can be prevented. Further, there is no possibility that the etching solution enters the reservoir portion 31 and the reservoir forming substrate wafer 130 is etched.

  When forming such a pressure generating chamber 12 or the like, the surface of the reservoir forming substrate wafer 130 opposite to the flow path forming substrate wafer 110 is formed on an anti-alkali material such as PPS (polyphenylene sulfide). ), PPTA (polyparaphenylene terephthalamide) or the like may be further sealed. Thereby, defects such as disconnection of the connection wiring 200 can be more reliably prevented.

  Next, as shown in FIG. 6A, the discontinuous metal layer 95 in the region facing the reservoir portion 31 (through hole 50a) is removed. That is, the adhesion layer 91 is removed by wet etching from the communicating portion 13 side to expose the metal layer 92, and the exposed metal layer 92 is removed by further wet etching from the communicating portion 13 side. Thereby, the reservoir part 31 and the communicating part 13 communicate with each other to form the reservoir 100.

  In this way, by finally removing the discontinuous metal layer 95 by etching to form the reservoir 100, unlike the conventional mechanical processing, it is possible to prevent the generation of foreign matter such as processing residue. . Accordingly, it is possible to prevent the machining residue from remaining in the ink flow paths such as the pressure generation chamber 12 and the communication portion 13 and the occurrence of defective discharge such as nozzle clogging due to the remaining machining residue.

  When the adhesion layer 91 and the metal layer 92 are removed by wet etching in this way, the adhesion layer 91 and the metal layer 92 are etched (side-etched) not only in the thickness direction but also in the surface direction. For this reason, when the adhesion layer 91 and the metal layer 92 are removed by wet etching, the ends of the adhesion layer 91 and the metal layer 92 are located outside the edge of the elastic film 50, that is, the edge of the through hole 50a. It will be. When the discontinuous metal layer 95 in the region facing the reservoir portion 31 is removed in this way, only the collar portion 35a where the adhesive layer 35 protrudes remains in the reservoir 100 (reservoir portion 31). Become.

Next, as shown in FIG. 6B, a CF-based etching gas such as carbon tetrafluoride (CF ₄ ) is applied to the flange portion 35a of the adhesive layer 35 protruding into the reservoir portion 31 in this way. At least removed by the reactive dry etching used. The end portion of the adhesive layer 35 from which the flange portion 35a has been removed may be located outside the inner wall of the reservoir portion 31, but it is more than the end portion of the elastic film 50, that is, the edge portion of the through hole 50a. It is preferably located outside. The dry etching may be performed from any side of the communication unit 13 or the reservoir unit 31, but is preferably performed from the communication unit 13 side. Thereby, the position of the edge part of the contact bonding layer 35 can be adjusted comparatively easily.

  Further, in the present embodiment, when removing the flange 35a, the mask film 52 on the surface of the flow path forming substrate wafer 110 is also removed. Of course, the mask film 52 may be left without being removed.

  Then, after removing the flange 35a protruding in the reservoir 100 in this way, as shown in FIG. 6C, for example, on the inner surface of the flow path such as the pressure generating chamber 12, the reservoir 100, etc. A protective film 15 made of a material having (ink resistance), for example, tantalum pentoxide is formed by, for example, a CVD method.

  At this time, since the flange portion 35a of the adhesive layer 35 that protrudes to the inside of the inner wall of the reservoir portion 31 is removed, in particular, in this embodiment, the end portion of the adhesive layer 35 is outside the end portion of the elastic film 50. Therefore, the protective film 15 is not formed on the surface of the adhesive layer 35. That is, the protective film 15 is well formed on the inner wall of the reservoir 100, and the protective film 15 does not peel off from the inner surface of the reservoir 100. Therefore, it is possible to prevent the occurrence of ejection failure such as nozzle clogging due to the protective film 15 that has been peeled off.

  After the protective film 15 is formed in this way, the driving IC 210 is mounted on the connection wiring 200 formed on the reservoir forming substrate wafer 130, and the driving IC 210 and the lead electrode 90 are connected by the driving wiring 220. (See FIG. 2). Thereafter, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 is bonded to the surface of the flow path forming substrate wafer 110 opposite to the reservoir forming substrate wafer 130, and the compliance substrate 40 is attached to the reservoir forming substrate wafer 130. The ink jet recording head having the above-described structure is manufactured by bonding and dividing the flow path forming substrate wafer 110 and the like into a single chip size flow path forming substrate 10 as shown in FIG.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, of course, this invention is not limited to embodiment mentioned above. For example, in the above-described embodiment, after the discontinuous metal layer 95 is removed and the reservoir 100 is formed, the removal step of removing at least the flange portion 35a of the adhesive layer 35 is performed. However, the present invention is not limited to this. The removal step may be performed at any timing before the protective film 15 is formed and after the adhesive layer 35 is completely cured.

  Further, the ink jet recording head of the above-described embodiment constitutes a part of a recording head unit including an ink flow path communicating with an ink cartridge or the like, and is mounted on the ink jet recording apparatus. FIG. 7 is a schematic view showing an example of the ink jet recording apparatus. As shown in FIG. 7, in the recording head units 1A and 1B having the ink jet recording head, cartridges 2A and 2B constituting ink supply means are detachably provided, and a carriage 3 on which the recording head units 1A and 1B are mounted. Is provided on a carriage shaft 5 attached to the apparatus body 4 so as to be movable in the axial direction. The recording head units 1A and 1B, for example, are configured to eject a black ink composition and a color ink composition, respectively. The driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted is moved along the carriage shaft 5. The On the other hand, the apparatus body 4 is provided with a platen 8 along the carriage shaft 5, and a recording sheet S, which is a recording medium such as paper fed by a paper feed roller (not shown), is conveyed on the platen 8. It is like that.

  In the above-described embodiments, the ink jet recording head has been described as an example of the liquid ejecting head. However, the present invention broadly applies to all liquid ejecting heads and ejects liquids other than ink. Of course, the present invention can also be applied to a method of manufacturing a liquid jet head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. FIG. 5 is an enlarged cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 2 is a schematic diagram of a liquid jet head according to an embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 13 Communication part, 14 Ink supply path, 15 Protective film, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board, 31 Reservoir part, 32 Piezoelectric element holding part, 35 Adhesive layer , 35a buttocks, 40 compliance substrate, 50 elastic film, 55 insulator film, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 91 adhesion layer, 92 metal layer, 100 reservoir, 110 flow Wafer for path forming substrate, 130 Wafer for reservoir forming substrate, 300 Piezoelectric element

Claims (6)

A lower electrode and a piezoelectric body via a vibration plate on one side of a flow path forming substrate in which a pressure generating chamber made of a silicon substrate and communicating with a nozzle opening for ejecting liquid and a communicating portion communicating with the pressure generating chamber are formed Forming a piezoelectric element composed of a layer and an upper electrode and removing the diaphragm in the region serving as the communicating portion to form a through hole; forming a lead electrode drawn from the piezoelectric element; and A reservoir formed of the same layer but having a step of sealing the through hole with a discontinuous metal layer that is discontinuous with the lead electrode, and a reservoir portion that is in communication with the communication portion and forms a part of the reservoir Bonding the forming substrate to the one surface side of the flow path forming substrate via an adhesive layer, and wet-etching the flow path forming substrate from the other surface side to form the pressure generating chamber and the communicating portion. Removing the discontinuous metal layer in the region facing the through hole by wet etching to connect the reservoir portion and the communicating portion to form the reservoir, and at least on the inner wall surface of the reservoir Forming a protective film made of a material having liquid resistance, and before the step of forming the protective film, a removing step of removing at least the ridge portion of the adhesive layer protruding into the reservoir portion A method of manufacturing a liquid jet head, comprising: 2. The method of manufacturing a liquid jet head according to claim 1, wherein, in the removing step, the flange portion is removed such that an end portion of the adhesive layer is positioned outside an edge portion of the through hole. 3. The method of manufacturing a liquid jet head according to claim 1, wherein the removing step is performed after the step of forming the reservoir. The method of manufacturing a liquid jet head according to claim 3, wherein, in the removing step, the flange portion is removed from the communication portion side. 5. The method of manufacturing a liquid jet head according to claim 1, wherein the flange portion is removed by dry etching. 6. The method of manufacturing a liquid jet head according to claim 1, wherein tantalum oxide is used as a material for the protective film.

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