JP2009160923A - Method of manufacturing liquid jetting head, and liquid jetting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a liquid jetting head, the yield of which is improved by easily removing foreign matters. <P>SOLUTION: The manufacturing method for the liquid jetting head is equipped with a flow passage forming board 10 provided with pressure generating chambers 12 communicating with a nozzle opening provided thereon, pressure generating means 300, which are provided on one side of the flow passage forming board 10 and generate pressure change in the pressure generating chambers 12 and a protective board 30, which is joined to the side with the pressure generating means 300 thereon of the flow passage forming board 10 and on the surface of which wirings 220 are formed. The method includes a dry-cleaning process for executing dry-etching in plasma etching mode over the surface on the wiring 220 side of the protective board 30, and a cleaning process consisting of a liquid cleaning process for cleaning over the surface on the pressure generating chamber 12 side of the flow passage forming board 10 with cleaning solution. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid ejecting head that ejects liquid and a liquid ejecting apparatus, and more particularly to a method for manufacturing an ink jet recording head that ejects ink as a liquid and an ink jet recording apparatus.

  As an ink jet recording head that is a liquid ejecting head, for example, a flow path forming substrate in which a pressure generation chamber communicating with a nozzle opening is formed, a piezoelectric element formed on one surface side of the flow path forming substrate, And a reservoir forming substrate provided with a reservoir portion which is bonded to a surface of the path forming substrate on the piezoelectric element side and which constitutes a part of a common ink chamber of the pressure generating chamber (for example, see Patent Document 1). ).

  As a method for manufacturing such an ink jet recording head, a piezoelectric element is formed on one side of a flow path forming substrate, a reservoir forming substrate is bonded to the flow path forming substrate, and then the other surface of the flow path forming substrate is used. A pressure generating chamber is formed by anisotropic etching from the side. And the nozzle plate in which the nozzle opening was provided in the surface side which the pressure generation chamber of a flow path formation board | substrate opens is joined via an adhesive agent.

  Further, Patent Document 1 discloses wiring of a reservoir forming substrate in order to prevent an etching solution from adhering to a surface provided with wiring on the reservoir forming substrate when anisotropically etching the flow path forming substrate. The structure which sticks a protective film on the surface in which was formed is disclosed.

JP-A-2006-272913 (FIGS. 1 to 5, pages 4 to 10)

  However, even if the protective film adhered to the reservoir forming substrate is peeled off, a part of the adhesive adhered to the protective film remains on the wiring, and the remaining adhesive becomes a foreign substance, and the wiring becomes a bonding wire or the like. When other wiring is connected, there is a problem that a connection failure due to foreign matter occurs.

  In addition, there is a problem that nozzles are clogged when foreign matter is present in a liquid flow path such as a pressure generating chamber of the flow path forming substrate. In addition, it is conceivable that the foreign matter in the liquid flow path of the flow path forming substrate is a foreign matter mainly due to adhesion of an adhesive or the like on the reservoir forming substrate.

  Further, when the bonding surface of the flow path forming substrate is subjected to a hydrophilic process such as a primer process before the nozzle plate is bonded to the flow path forming substrate, foreign substances are present in the liquid flow path such as the pressure generating chamber of the flow path forming substrate. If present, the foreign matter adheres to the partition wall of the liquid flow path due to the hydrophilic treatment, and there is a problem that the foreign matter is peeled off at an unexpected timing such as when ink is ejected and the nozzle is clogged.

  Such a problem exists not only in the method of manufacturing an ink jet recording head but also in the method of manufacturing a liquid ejecting head that ejects liquid other than ink.

  SUMMARY An advantage of some aspects of the invention is that it provides a liquid ejecting head manufacturing method and a liquid ejecting apparatus that improve yield by easily removing foreign matters.

An aspect of the present invention that solves the above problems includes a flow path forming substrate provided with a pressure generating chamber communicating with a nozzle opening, and a pressure change in the pressure generating chamber provided on one side of the flow path forming substrate. A method of manufacturing a liquid jet head, comprising: a pressure generating means to be generated; and a protective substrate having a wiring formed on a surface thereof bonded to a surface side of the flow path forming substrate on which the pressure generating means is provided. A dry cleaning step of cleaning the wiring side surface of the protective substrate by dry etching in a plasma etching mode, and a liquid cleaning step of cleaning the pressure generation chamber side surface of the flow path forming substrate with a cleaning liquid. A method of manufacturing a liquid jet head comprising a cleaning step.
In such an embodiment, foreign matters such as adhesive adhered on the wiring in the dry cleaning process can be removed, and connection failure of other wiring can be prevented, and the liquid flow in the pressure generating chamber or the like can be prevented in the liquid cleaning process. Foreign matters in the path can be removed, and the occurrence of clogging of the nozzle openings can be reduced.

  Here, the dry cleaning process is preferably performed after the liquid cleaning process. According to this, even if the foreign matter scattered by the dry cleaning process is reattached in the liquid flow path such as the pressure generation chamber, the reattached foreign matter can be removed and the foreign matter generation rate can be reduced.

  In addition, it is preferable that the method further includes a step of bonding a nozzle plate provided with the nozzle opening on the opening surface side of the flow path forming substrate where the pressure generating chamber opens after the cleaning step. According to this, a foreign material larger than a nozzle opening can be removed by removing a foreign material before joining a nozzle plate.

  In addition, after performing the cleaning step, at least a region of the flow path forming substrate to be bonded to the nozzle plate is subjected to a hydrophilic treatment, and then the nozzle plate is bonded to the flow path forming substrate with an adhesive. Is preferred. According to this, the bonding strength between the flow path forming substrate and the nozzle plate can be improved, and the foreign substance in the liquid flow path is not fixed by the hydrophilic treatment, and the foreign substance is peeled off at an unexpected timing. It is possible to prevent clogging of the nozzle opening.

  Moreover, it is preferable to further include a step of forming a liquid-resistant protective film on the inner surface of the pressure generating chamber of the flow path forming substrate before performing the cleaning step. According to this, the flow path forming substrate can be protected from the liquid by the protective film, and foreign matters on the flow path forming substrate can be removed without changing the film thickness of the protective film by the liquid cleaning process.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing a schematic configuration of an ink jet recording head which is an example of a liquid jet head according to Embodiment 1 of the present invention. FIG. 2 is a plan view of FIG. FIG.

As shown in the figure, the flow path forming substrate 10 is composed of a silicon single crystal substrate having a plane orientation (110) in this embodiment, and one surface thereof is made of silicon oxide (SiO ₂ ) formed by thermal oxidation in advance. An elastic film 50 is formed.

  A plurality of pressure generating chambers 12 are arranged in parallel in the width direction of the flow path forming substrate 10. In addition, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and the communication portion 13 and each pressure generation chamber 12 are provided for each pressure generation chamber 12. Communication is made via a supply path 14 and a communication path 15. The communication part 13 communicates with a reservoir part 31 of a protective substrate, which will be described later, and constitutes a part of a reservoir that becomes a common ink chamber of the pressure generation chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13. In this embodiment, the ink supply path 14 is formed by narrowing the width of the flow path from one side. However, the ink supply path may be formed by narrowing the width of the flow path from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path. Further, each communication passage 15 is formed by extending the partition walls 11 on both sides in the width direction of the pressure generating chamber 12 to the communication portion 13 side to partition the space between the ink supply path 14 and the communication portion 13. Yes. That is, the flow path forming substrate 10 has an ink supply path 14 having a cross-sectional area smaller than the cross-sectional area of the pressure generating chamber 12 in the width direction, and communicates with the ink supply path 14 and disconnects the ink supply path 14 in the width direction. It is divided and provided by the several partition 11 which consists of the communicating path 15 which has a larger cross-sectional area than an area.

  The flow path forming substrate 10 is formed with a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15.

Further, a protective film 16 made of a material having ink resistance, for example, tantalum oxide such as tantalum pentoxide (Ta ₂ O ₅ ) is provided on the inner surface of the liquid flow path of the flow path forming substrate 10. Yes. The ink resistance referred to here is etching resistance against alkaline ink. The material of the protective film 16 is not limited to tantalum oxide, and depending on the pH value of the ink (liquid) used, for example, zirconium oxide (ZrO ₂ ), nickel (Ni), chromium (Cr) or the like is used. Also good. However, when an acidic liquid is used, an acid-resistant protective film is of course used.

  Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive. Or a heat-welded film or the like. In the present embodiment, as will be described in detail later, a first hydrophilic treatment layer 17 is provided by performing a hydrophilic treatment on the surface of the flow path forming substrate 10 to which the nozzle plate 20 is bonded. The surface to be bonded to the flow path forming substrate 10 is provided with a second hydrophilic treatment layer 22 by performing a hydrophilic treatment, and the first hydrophilic treatment layer 17 and the second hydrophilic treatment layer 22 are bonded to each other with an adhesive 23. It was made to adhere through.

  Examples of the material of the nozzle plate 20 include glass ceramics, a silicon single crystal substrate, and stainless steel.

On the other hand, the elastic film 50 is formed on the side opposite to the opening surface of the flow path forming substrate 10 as described above, and the elastic film 50 is made of, for example, zirconium oxide (ZrO ₂ ). An insulator film 55 is formed. Further, a lower electrode film 60, a piezoelectric layer 70, and an upper electrode film 80 are laminated on the insulator film 55 by a process to be described later, thereby constituting the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one of the electrodes of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the present invention is not limited to this, and for example, the elastic film 50 and the insulator film 55 are provided. Instead, only the lower electrode film 60 may act as a diaphragm. Further, the piezoelectric element 300 itself may substantially serve as a diaphragm.

The piezoelectric layer 70 is made of a piezoelectric material having an electromechanical conversion effect formed on the lower electrode film 60. The piezoelectric layer 70 is preferably a crystal film having a perovskite structure. For example, a ferroelectric material such as lead zirconate titanate (PZT) or a metal oxide such as niobium oxide, nickel oxide, or magnesium oxide is used. Those to which is added are suitable. Specifically, lead titanate (PbTiO ₃ ), lead zirconate titanate (Pb (Zr, Ti) O ₃ ), lead zirconate (PbZrO ₃ ), lead lanthanum titanate ((Pb, La), TiO ₃ ) ) Lead lanthanum zirconate titanate ((Pb, La) (Zr, Ti) O ₃ ) or lead magnesium titanate zirconate titanate (Pb (Zr, Ti) (Mg, Nb) O ₃ ) or the like is used. it can. The piezoelectric layer 70 is formed thick enough to suppress the thickness so as not to generate cracks in the manufacturing process and to exhibit sufficient displacement characteristics. For example, in this embodiment, the piezoelectric layer 70 is formed with a thickness of about 1 to 2 μm.

  Further, each upper electrode film 80 that is an individual electrode of the piezoelectric element 300 is drawn from the vicinity of the end on the ink supply path 14 side and extended to the insulator film 55, for example, gold (Au) or the like. The lead electrode 90 which consists of is connected.

  On the flow path forming substrate 10 on which such a piezoelectric element 300 is formed, that is, on the lower electrode film 60, the elastic film 50, and the lead electrode 90, a protection having a reservoir portion 31 constituting at least a part of the reservoir 100. The substrate 30 is bonded via an adhesive 35. In the present embodiment, the reservoir portion 31 is formed through the protective substrate 30 in the thickness direction and across the width direction of the pressure generation chamber 12. As described above, the communication portion 13 of the flow path forming substrate 10. The reservoir 100 is configured as a common ink chamber for the pressure generation chambers 12. Alternatively, the communication portion 13 of the flow path forming substrate 10 may be divided into a plurality of pressure generation chambers 12 and only the reservoir portion 31 may be used as the reservoir. Further, for example, only the pressure generation chamber 12 is provided in the flow path forming substrate 10, and a reservoir and a member interposed between the flow path forming substrate 10 and the protective substrate 30 (for example, the elastic film 50, the insulator film 55, etc.) An ink supply path 14 that communicates with each pressure generating chamber 12 may be provided.

  A piezoelectric element holding portion 32 having a space that does not hinder the movement of the piezoelectric element 300 is provided in a region of the protective substrate 30 that faces the piezoelectric element 300. The piezoelectric element holding part 32 only needs to have a space that does not hinder the movement of the piezoelectric element 300, and the space may be sealed or unsealed.

  As such a protective substrate 30, it is preferable to use substantially the same material as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, ceramic material, etc. In this embodiment, the same material as the flow path forming substrate 10 is used. The silicon single crystal substrate was used.

  The protective substrate 30 is provided with a through hole 33 that penetrates the protective substrate 30 in the thickness direction. The vicinity of the end portion of the lead electrode 90 drawn from each piezoelectric element 300 is provided so as to be exposed in the through hole 33.

  A connection wiring 220 formed in a predetermined pattern is formed on the protective substrate 30, and a drive circuit 200 for driving the piezoelectric element 300 is mounted on the connection wiring 220. As the drive circuit 200, for example, a circuit board, a semiconductor integrated circuit (IC), or the like can be used. Then, the leading end portion of each lead electrode 90 drawn from each piezoelectric element 300 to the outside of the piezoelectric element holding portion 32 and the drive circuit 200 are electrically connected via the drive wiring 210.

  In addition, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. Here, the sealing film 41 is made of a material having low rigidity and flexibility, and one surface of the reservoir portion 31 is sealed by the sealing film 41. The fixing plate 42 is formed of a relatively hard material. Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an ink introduction port connected to an external ink supply means (not shown), and the interior from the reservoir 100 to the nozzle opening 21 is filled with ink. In accordance with the recording signal from, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generating chamber 12, and the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer. By bending and deforming 70, the pressure in each pressure generating chamber 12 is increased, and ink droplets are ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 7 are cross-sectional views in the width direction of the pressure generating chamber showing the method of manufacturing the ink jet recording head which is an example of the liquid ejecting head according to the first embodiment of the invention.

First, as shown in FIG. 3A, silicon dioxide (SiO ₂₎ constituting an elastic film 50 on the surface of a flow path forming substrate wafer 110, which is a silicon wafer in which a plurality of flow path forming substrates 10 are integrally formed. ) Is formed. Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Next, as shown in FIG. 3C, the lower electrode film 60 is formed on the entire surface of the insulator film 55 and patterned into a predetermined shape. The material of the lower electrode film 60 is not particularly limited. However, when lead zirconate titanate (PZT) is used as the piezoelectric layer 70, it is desirable that the material has little change in conductivity due to diffusion of lead oxide. . For this reason, platinum, iridium or the like is preferably used as the material of the lower electrode film 60.

  Next, as shown in FIG. 4A, the piezoelectric layer 70 and the upper electrode film 80 are sequentially stacked on the lower electrode film 60. Here, in this embodiment, a so-called sol in which an organometallic compound is dissolved and dispersed in a solvent is applied, dried, gelled, and further fired at a high temperature to obtain a piezoelectric layer 70 made of a metal oxide. The piezoelectric layer 70 is formed using a gel method. The method for manufacturing the piezoelectric layer 70 is not limited to the sol-gel method, and for example, a PVD (Physical Vapor Deposition) method such as a MOD (Metal-Organic Decomposition) method, a sputtering method, or a laser ablation method may be used. Good. The upper electrode film 80 can be made of a highly conductive metal such as iridium (Ir).

  Next, as shown in FIG. 4B, the piezoelectric layer 300 is formed by simultaneously patterning the piezoelectric layer 70 and the upper electrode film 80.

  Next, the lead electrode 90 is formed. Specifically, as shown in FIG. 4C, after the lead electrodes 90 are formed over the entire surface of the flow path forming substrate wafer 110, for example, each through a mask pattern (not shown) made of a resist or the like. Each piezoelectric element 300 is formed by patterning.

  Next, as shown in FIG. 5A, a protective substrate wafer 130 that is a silicon wafer and serves as a plurality of protective substrates 30 is disposed on the piezoelectric element 300 side of the flow path forming substrate wafer 110 via an adhesive 35. Join. The protective substrate wafer 130 is formed with the reservoir portion 31, the piezoelectric element holding portion 32, the through hole 33, and the connection wiring 220 formed in advance.

  Next, as shown in FIG. 5B, the flow path forming substrate wafer 110 is thinned to a predetermined thickness. Next, as shown in FIG. 5C, a mask film 52 is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape.

  6A, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) using an alkaline solution such as KOH through the mask film 52, whereby the piezoelectric element 300 is formed. Corresponding pressure generating chambers 12, communication portions 13, ink supply passages 14, communication passages 15 and the like are formed. At this time, although not particularly illustrated, the connection wiring 220 of the protection substrate wafer 130 is actually provided to prevent the protection substrate wafer 130 from being etched at the same time and to protect the connection wiring 220. The surface is protected by a sealing film. Examples of such a sealing film include materials having alkali resistance (etching resistance), such as PPS (polyphenylene sulfide) and PPTA (polyparaphenylene terephthalamide). By providing the sealing film in this way, it is possible to more reliably prevent defects such as disconnection of the connection wiring 220 provided on the surface of the protective substrate wafer 130.

  Next, the mask film 52 on the surface of the flow path forming substrate wafer 110 is removed, and as shown in FIG. 6B, the inner surface of the liquid flow path, that is, the pressure generation chamber 12, the communication portion 13, and the ink supply path 14. A protective film 16 is formed on the inner surface of the communication path 15. As described above, the protective film 16 is made of, for example, a material having liquid resistance (ink resistance) such as oxide or nitride, and in the present embodiment, is made of tantalum pentoxide. Moreover, the formation method of the protective film 16 is not particularly limited, but can be formed by, for example, a CVD method.

  Next, the bonded body of the flow path forming substrate wafer 110 and the protective substrate wafer 130 is cleaned (cleaning step). In the present embodiment, first, as shown in FIG. 6C, after performing a dry cleaning step of cleaning the surface of the protective substrate wafer 130 on which the connection wiring 220 is provided by performing dry etching in a plasma etching mode. As shown in FIG. 7A, a liquid cleaning step of cleaning the surface on the liquid flow path side including the pressure generating chamber 12 of the flow path forming substrate wafer 110 with a cleaning liquid is performed.

  Here, the dry etching in the plasma etching mode (PE mode) is generally a method using a reaction gas obtained by mixing a chlorine gas and an oxygen gas, or a reaction gas obtained by adding an organic gas to the reaction gas. Thus, the foreign matter attached to the connection wiring 220 on the surface of the protective substrate wafer 130 is removed. Note that a large amount of adhesive when the sealing film is peeled off as a foreign substance is attached to the connection wiring 220, and the residue of this adhesive is mainly removed by a dry cleaning process. Thereby, it is possible to prevent a connection failure from occurring when the drive circuit 200 and the external wiring are connected to the connection wiring 220.

  Further, the liquid cleaning step is to remove the foreign matter adhering in the liquid flow path with the cleaning liquid. In this embodiment, for example, after removing the foreign matter with ethanol, the ethanol is removed by washing with water, and thereafter The water was removed with isopropyl alcohol (IPA). By this liquid cleaning process, foreign substances adhering to the liquid flow path, particularly adhesives scattered and reattached in the plasma etching mode can be surely removed. In the liquid cleaning process of the present embodiment, as shown in FIG. 7A, the cleaning tank 400 is filled with the joined body in which the flow path forming substrate wafer 110 and the protective substrate wafer 130 are bonded. This was performed by immersing in the cleaning solution 401. Of course, the cleaning method in the liquid cleaning step is not particularly limited to this, and for example, the cleaning liquid may be sprayed onto the surface of the flow path forming substrate wafer 110 where the liquid flow path is provided.

  In this embodiment, the liquid cleaning process is performed after the dry cleaning process. Thereby, the foreign matter scattered by the dry cleaning process and reattached to the liquid channel can be reliably removed by the liquid cleaning process.

  Here, in a plurality of bonded wafers, a cleaning process for performing a liquid cleaning process after performing a dry cleaning process as in the present embodiment, and a cleaning process for performing a dry cleaning process after performing a liquid cleaning process; And the occurrence rate of foreign matters in the liquid flow path in each cleaning step was measured. The results are shown in Table 1 below. Note that the foreign matter in the liquid channel is a foreign matter having an inner diameter (for example, 15 μm in this embodiment) or more of the nozzle opening 21 and the foreign matter generation rate indicates the number of chips in which the foreign matter exists.

  As shown in Table 1, by performing the liquid cleaning process after performing the dry cleaning process of the present embodiment, it is possible to reduce the generation of foreign matter compared to the case where the liquid cleaning is performed first. That is, it is conceivable that the foreign matter scattered in the dry cleaning process reattaches in the liquid flow path, and this reattached foreign matter can be removed in the subsequent liquid cleaning process.

  In this embodiment, the liquid cleaning process is performed after the dry cleaning process. However, even if the dry cleaning process is performed after the liquid cleaning process, the foreign matter attached to the connection wiring 220 can be removed. .

  Incidentally, it may be possible to clean the surface of the flow path forming substrate wafer 110 on which the liquid flow path is provided by dry etching (dry cleaning process) in the plasma etching mode, but in the plasma etching mode, the surface is thinly removed. For this reason, the thickness of the protective film 16 provided on the surface of the liquid flow path becomes thin, which cannot be performed. Even if the protective film 16 is not provided, it cannot be performed because the film thickness of the diaphragm, the volume of the liquid flow path, and the like are changed by the dry cleaning process. In the present invention, by washing the liquid channel side with liquid, only the foreign matter in the liquid channel can be removed without changing the film thickness of the protective film 16 or the diaphragm, the volume of the liquid channel, or the like.

  Next, as shown in FIG. 7B, the surface of the flow path forming substrate wafer 110 where the liquid flow path opens is subjected to a hydrophilic treatment. The hydrophilic treatment is for improving the adhesive force of the adhesive 23 that adheres to the nozzle plate 20, and examples thereof include corona treatment, plasma treatment, UV irradiation, and treatment with a hydrophilic treatment agent. In the present embodiment, the first hydrophilic treatment layer 17 is formed by subjecting the flow path forming substrate wafer 110 to a primer treatment. The hydrophilic treatment may be performed at least in a region where the nozzle plate 20 of the flow path forming substrate 10 is joined. In this embodiment, the flow path forming substrate wafer 110 is dipped in the primer liquid to immerse the liquid flow path. The first hydrophilic treatment layer 17 was also formed on the inner surface.

  Moreover, the liquid washing | cleaning process mentioned above functions also as pre-processing which performs a hydrophilic process. That is, before the hydrophilic treatment, cleaning to remove the foreign matter on the surface to be subjected to the hydrophilic treatment is necessary. However, in this embodiment, the foreign matter is removed by the previous washing step, so the washing is performed by the hydrophilic treatment. There is no need to do it. Of course, the liquid cleaning process using the cleaning liquid may be performed again before the hydrophilic treatment.

  Further, a liquid cleaning process is performed before the flow path forming substrate wafer 110 is subjected to a hydrophilic treatment, so that the foreign matter adhering in the liquid flow path is covered with the first hydrophilic treatment layer 17, and an expectation such as when ink is discharged is expected. It is possible to reliably prevent the foreign matter from peeling off and clogging of the nozzles at the timing.

  Next, as illustrated in FIG. 7C, the nozzle plate 20 is bonded through an adhesive 23. A nozzle opening 21 is formed in the nozzle plate 20 in advance, and a second hydrophilic treatment layer 22 is formed by performing a hydrophilic treatment on the surface to be bonded to the flow path forming substrate wafer 110. deep. Thereby, the adhesive strength between the flow path forming substrate wafer 110 and the nozzle plate 20 can be improved.

  Thereafter, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. Then, the compliance substrate 40 is bonded to the protective substrate wafer 130, and the flow path forming substrate wafer 110 or the like is divided into the flow path forming substrate 10 or the like having one chip size as shown in FIG. Inkjet recording head.

(Other embodiments)
As mentioned above, although one Embodiment of this invention was described, the basic composition of this invention is not limited to what was mentioned above. For example, in Embodiment 1 described above, a silicon single crystal substrate having a crystal plane orientation of (110) is exemplified as the flow path forming substrate 10, but the present invention is not particularly limited thereto. For example, the crystal plane orientation is (100). A plane silicon single crystal substrate may be used, or a material such as an SOI substrate or glass may be used.

  In the first embodiment described above, the thin film type piezoelectric element 300 has been described as the pressure generating means for generating a pressure change in the pressure generating chamber 12 as the pressure generating means. Thick film type piezoelectric elements formed by a method such as attaching a green sheet, or longitudinal vibration type piezoelectric elements in which piezoelectric materials and electrode forming materials are alternately stacked to expand and contract in the axial direction are used. Can do. Also, as a pressure generating means, a heating element is arranged in the pressure generating chamber, and droplets are discharged from the nozzle opening by bubbles generated by the heat generated by the heating element, or static electricity is generated between the diaphragm and the electrode. Thus, it is possible to use one that deforms the diaphragm by electrostatic force and ejects droplets from the nozzle openings.

  In Embodiment 1 described above, in the liquid cleaning step, the cleaning liquid is cleaned using ethanol, water, and IPA in sequence. However, the cleaning liquid is not particularly limited, and the cleaning liquid is appropriately selected depending on the type of foreign matter (type of adhesive). do it.

  The ink jet recording head according to the first embodiment described above constitutes a part of a recording head unit including an ink flow path communicating with an ink cartridge and the like, and is mounted on an ink jet recording apparatus which is an example of a liquid ejecting apparatus. The FIG. 8 is a schematic view showing an example of the ink jet recording apparatus. As shown in FIG. 8, in the recording head units 1A and 1B having the ink jet recording head, cartridges 2A and 2B constituting ink supply means are detachably provided, and a carriage 3 on which the recording head units 1A and 1B are mounted. Is provided on a carriage shaft 5 attached to the apparatus body 4 so as to be movable in the axial direction. The recording head units 1A and 1B, for example, are configured to eject a black ink composition and a color ink composition, respectively. The driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted is moved along the carriage shaft 5. The On the other hand, the apparatus body 4 is provided with a platen 8 along the carriage shaft 5, and a recording sheet S, which is a recording medium such as paper fed by a paper feed roller (not shown), is conveyed on the platen 8. It is like that.

  In FIG. 8, an ink jet recording apparatus is shown as an example of a serial type liquid ejecting apparatus. However, the present invention can also be applied to an ink jet recording apparatus (line printer) that is an example of a line head type liquid ejecting apparatus. .

  In the first embodiment described above, the ink jet recording head has been described as an example of the liquid ejecting head. However, the present invention is widely applied to all liquid ejecting heads, and is a liquid ejecting liquid other than ink. Of course, the present invention can also be applied to an ejection head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like. A liquid ejecting apparatus equipped with these liquid ejecting heads is not limited to an ink jet recording apparatus, and can also be applied to a liquid ejecting apparatus that ejects liquid other than ink.

1 is an exploded perspective view showing a schematic configuration of a recording head according to Embodiment 1 of the invention. 2A and 2B are a plan view and a cross-sectional view of a recording head according to Embodiment 1 of the invention. FIG. 3 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 3 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 3 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 3 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 3 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. 1 is a schematic diagram of a recording apparatus according to an embodiment.

Explanation of symbols

  I ink jet recording head (liquid jet head), 10 flow path forming substrate, 12 pressure generating chamber, 13 communication portion, 14 ink supply path, 15 communication path, 16 protective film, 17 first hydrophilic treatment layer, 20 nozzle plate , 21 Nozzle opening, 30 Protection substrate, 31 Reservoir part, 32 Piezoelectric element holding part, 40 Compliance substrate, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 90 Lead electrode, 100 Reservoir, 200 Drive circuit, 210 Connection wiring, 300 piezoelectric element.

Claims (6)

A flow path forming substrate provided with a pressure generating chamber communicating with the nozzle opening, a pressure generating means provided on one side of the flow path forming substrate to cause a pressure change in the pressure generating chamber, and the flow path forming A method of manufacturing a liquid jet head comprising: a protective substrate bonded to a surface side of the substrate on which the pressure generating means is provided and having a wiring formed on the surface thereof;
Cleaning comprising: a dry cleaning step for cleaning the wiring side surface of the protective substrate by performing dry etching in a plasma etching mode; and a liquid cleaning step for cleaning the pressure generation chamber side surface of the flow path forming substrate with a cleaning liquid. A method for manufacturing a liquid jet head, comprising: a step.   The method of manufacturing a liquid jet head according to claim 1, wherein the dry cleaning step is performed after the liquid cleaning step.   2. The method according to claim 1, further comprising a step of bonding a nozzle plate provided with the nozzle openings on an opening surface side where the pressure generating chamber of the flow path forming substrate opens after the cleaning step. Or the manufacturing method of the liquid jet head of 2.   After performing the cleaning step, at least a region of the flow path forming substrate to be bonded to the nozzle plate is subjected to a hydrophilic treatment, and then the nozzle plate is bonded to the flow path forming substrate through an adhesive. A method of manufacturing a liquid jet head according to claim 3.   5. The method according to claim 1, further comprising a step of forming a liquid-resistant protective film on an inner surface of the pressure generation chamber of the flow path forming substrate before performing the cleaning step. A manufacturing method of the liquid jet head according to the above.   A liquid ejecting apparatus including the liquid ejecting head manufactured from the manufacturing method according to claim 1.

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