JP2006270115A - Substrate treatment apparatus and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent products generated accompanying the treatment of a substrate from sticking to the front surface of the substrate after the treatment of the substrate surface is performed by supplying treatment liquid including hydrofluoric acid. <P>SOLUTION: This substrate treatment apparatus is equipped with a holding member 113 that holds a wafer W, driving motor 110 that rotates a spin base 112, treatment liquid supply nozzle 130 that supplies a first treatment liquid including hydrofluoric acid to the front surface of the wafer W and a second treatment liquid including deionized water and acid also to the front surface of the wafer W, and control section 150 that makes the treatment liquid supply nozzle 130 perform wafer surface treatment by supplying the first treatment liquid to the front surface of the wafer W in a state where the wafer W held by the holding member 113 is rotated while chemical treatment is performed by sulfuric acid hydrogen peroxide cleaning, ozone flushing cleaning or RCA cleaning, and after a period in which the wafer W is rotated for a predetermined amount of time, that makes the treatment liquid supply nozzle 130 perform the surface treatment of the wafer W by supplying the second treatment liquid to the front surface of the wafer W while the wafer W is rotated. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for supplying a processing liquid to a substrate such as a semiconductor wafer, a glass substrate for liquid crystal display, and a plasma display panel and performing a predetermined process such as cleaning on the surface of the substrate.

  A conventional substrate processing apparatus includes a holding mechanism that holds a wafer, which is a kind of substrate, a rotating mechanism that rotates a holding mechanism that holds the wafer in order to rotate the wafer, and a nozzle that supplies processing liquid to the surface of the wafer. A single wafer type spin cleaning apparatus equipped with the above, and this spin cleaning apparatus processes the surface of the wafer as follows.

First, a chemical solution is supplied to the surface of the wafer while the wafer held by the holding mechanism is rotated to perform chemical cleaning of the wafer surface. The chemical solution herein, ozone (O ₃₎ water or the like. Next, hydrofluoric acid (HF) is supplied to the surface of the wafer while the wafer is rotated to perform an etching process on the surface of the wafer. Immediately after the etching process is completed, pure water is supplied to the surface of the wafer while the rotation of the wafer is continued to clean the surface of the wafer with pure water. Finally, the wafer surface is dried by rotating the wafer at a high speed without supplying any processing liquid to the wafer surface. Thus, a series of chemical solution cleaning processing, etching processing, pure water cleaning processing, and drying processing are completed.

Japanese Patent Laid-Open No. 11-102884

  However, in a conventional substrate processing apparatus, when hydrofluoric acid (HF) is supplied to the wafer surface and the etching process on the wafer surface is completed, pure water is supplied to the wafer surface while the wafer is rotated. Since the surface of the wafer is cleaned with pure water, there is a problem that fluorosilicic acid, which is a product after the etching process, adheres to the surface of the wafer after the pure water cleaning process.

  Further, when elemental analysis is performed on the surface of the wafer after the pure water cleaning process using XPS (X-ray Photoelectron Spectroscopy), there is a problem that the fluorine (F) concentration becomes high. If the processing is continued in a state where the fluorine concentration is high, the device characteristics of the wafer may be adversely affected in the subsequent device manufacturing stage.

  The present invention has been made in view of such circumstances, and after supplying a treatment liquid containing hydrofluoric acid to the surface of the substrate and processing the surface of the substrate, the substrate of the product accompanying the processing of the substrate It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method that suppress adhesion of the substrate to the surface.

  In order to achieve the above-described object, a substrate processing apparatus according to the present invention is a substrate processing apparatus that performs a predetermined process on a substrate, the substrate holding means for holding the substrate, and the substrate holding for holding the substrate. A driving means for rotating the means, and an SC-1 treatment liquid or hydrochloric acid / permeate mixed with sulfuric acid / hydrogen peroxide, ozone water, ammonia water / hydrogen peroxide water / water as a chemical solution on the surface of the substrate held by the substrate holding means. Chemical solution supply means for supplying an SC-2 treatment liquid mixed with hydrogen oxide water and water, and first treatment liquid supply means for supplying a first treatment liquid containing hydrofluoric acid to the surface of the substrate held by the substrate holding means A second treatment liquid supply means for supplying a second treatment liquid obtained by adding hydrochloric acid, sulfuric acid, or carbonic acid to pure water to the surface of the substrate held by the substrate holding means; Chemical solution supplier After the chemical liquid processing with the chemical liquid from is performed, the first processing liquid is supplied to the surface of the substrate by the first processing liquid supply means in a state where the substrate held by the substrate holding means is rotated by the driving means. When the surface of the substrate is processed and the processing is completed, the substrate is rotated without supplying the treatment liquid to the surface of the substrate for a predetermined time, and the hydrofluoric acid is shaken off from the outer periphery of the substrate, and then the substrate is rotated. And control means for supplying the second processing liquid to the surface of the substrate by the second processing liquid supply means and processing the surface of the substrate.

  Further, in the substrate processing apparatus according to the present invention, the control means includes a drive means control means for controlling the rotational speed of the drive means, and supply and stop of the first treatment liquid from the first treatment liquid supply means, And a processing liquid control means for controlling the supply and stop of the second processing liquid from the second processing liquid supply means, respectively.

  The substrate processing apparatus and the substrate processing method according to the present invention are characterized in that the second processing liquid is a processing liquid obtained by adding 0.1% or less of the acid to pure water.

  The substrate processing apparatus according to the present invention is characterized in that the first processing liquid supply means and the second processing liquid supply means are shared by a single nozzle.

  The substrate processing apparatus according to the present invention further includes pure water supply means for supplying pure water to the surface of the substrate held by the substrate holding means, and the control means is configured to perform the chemical processing after the chemical solution processing is completed. The pure water treatment is performed by supplying pure water from the pure water supply means to the surface of the substrate before the treatment with the first treatment liquid is started.

  The substrate processing method according to the present invention is a substrate processing method for performing predetermined processing on a substrate, and after performing chemical treatment by sulfuric acid / hydrogen peroxide cleaning, ozone water cleaning or RCA cleaning on a substrate, A first step of supplying a first treatment liquid containing hydrofluoric acid to the surface of the substrate in a rotated state to treat the surface of the substrate, and rotating the substrate in a state where the treatment liquid is not supplied to the surface of the substrate. A second step in which the acid is shaken off from the outer periphery of the substrate, and a second treatment liquid obtained by adding hydrochloric acid, sulfuric acid, or carbonic acid to pure water is supplied to the surface of the substrate while the substrate is rotated. And a third step of performing the above process.

  In the substrate processing method according to the present invention, the first step supplies pure water to the surface of the substrate before the processing with the first processing liquid is started after the chemical processing is completed. Processing is performed.

  In the case of “holding the substrate by the substrate holding means”, when holding a plurality of locations at the end of the substrate, the support member may support a plurality of locations on the back surface of the substrate. In addition, the “first treatment liquid containing hydrofluoric acid” includes a treatment liquid containing only hydrofluoric acid. Furthermore, “a treatment of the surface of the substrate for supplying the first treatment liquid to the surface of the substrate” may be an etching treatment for etching the surface of the substrate on which an oxide film or the like is formed.

  According to the substrate processing apparatus of the present invention, the SC-1 treatment liquid in which sulfuric acid / hydrogen peroxide, ozone water, ammonia water / hydrogen peroxide water / water are mixed, or SC-2 in which hydrochloric acid / hydrogen peroxide water / water is mixed. After the chemical liquid processing with the processing liquid is performed on the substrate, the first processing liquid containing hydrofluoric acid is supplied to the surface of the substrate by the first processing liquid supply means in a state where the substrate held by the substrate holding means is rotated. After the substrate surface is processed and the processing is completed, the substrate is rotated without supplying the treatment liquid to the substrate surface for a predetermined time, and the hydrofluoric acid is shaken off from the outer periphery of the substrate. 2 The substrate processing is performed by supplying a second processing solution obtained by adding hydrochloric acid, sulfuric acid, or carbonic acid to pure water to the surface of the substrate by the processing solution supply means. Accompanying product There is an effect of suppressing the adhesion of the surface of the plate.

  Further, according to the substrate processing method of the present invention, after performing chemical treatment by sulfuric acid / hydrogen peroxide cleaning, ozone water cleaning or RCA cleaning on the substrate, hydrofluoric acid is applied to the surface of the substrate while the substrate is rotated. The first processing liquid is supplied to process the surface of the substrate, the substrate is rotated without supplying the processing liquid to the surface of the substrate, hydrofluoric acid is spun off from the outer periphery of the substrate, and pure water is rotated while the substrate is rotated. Since the substrate surface is treated by supplying a second treatment solution to which hydrochloric acid, sulfuric acid, or carbonic acid is added to the surface of the substrate, the product attached to the surface of the substrate is not attached to the substrate surface. There is an effect that it can be suppressed.

  FIG. 1 is a cross-sectional view of a substrate processing apparatus according to the present invention. The substrate processing apparatus 100 supplies a processing liquid to the surface of a wafer W, which is a kind of substrate, performs an etching process, supplies a cleaning liquid to perform a cleaning process, or rotates the wafer W to rotate the surface of the wafer W. It is the washing | cleaning apparatus which performs the drying process. A drive motor 110 is provided at the center of the substrate processing apparatus 100. The drive motor 110 is provided with a spin base 112 configured to be rotatable via a rotating shaft 111. The rotation speed of the spin base 112 can be freely changed by a drive motor control unit 152 (see FIG. 2) of the control unit 150 to be described later, and the end portion of the wafer W is held on the upper surface of the spin base 112. Three holding members 113 are provided, and the holding members 113 hold the wafer W horizontally.

  An annular cup 120 made of resin or metal is provided outside the spin base 112 so as to surround the spin base 112 and prevent a plurality of treatment liquids from scattering. The cup 120 is provided with an inclined portion on the inner side so as to become narrower toward the top. The diameter of the opening 121 of the cup 120 is set to a size that allows the wafer W in a horizontal state to be lowered and stored in the cup 120 as it is.

  A plurality of drainage pipes 125 are connected to the bottom surface 122 of the cup 120 (two in FIG. 1). On the bottom surface 122 of the cup 120, an annular wall 123 having a smaller diameter than the wafer W is erected. At the upper end of the annular wall 123, a rectifying plate 124 is disposed near the back surface of the spin base 112. The peripheral portion of the rectifying plate 124 is configured to be inclined downward toward the outside.

  A treatment liquid supply nozzle 130 is disposed above the cup 120. The processing liquid supply nozzle 130 is connected to a plurality of supply sources as described below.

First, the processing liquid supply nozzle 130 is connected to a pure water supply source 232 via a pipe 131 and a pipe 132, and control of supply and stop of pure water (H ₂ O) to the processing liquid supply nozzle 130 is as follows. This is performed by an on-off valve 132A provided in the pipe 132.

  The treatment liquid supply nozzle 130 is connected to a hydrofluoric acid supply source 233 via a pipe 131 and a pipe 133, and the supply and stop of the hydrofluoric acid (HF) to the treatment liquid supply nozzle 130 is controlled by the pipe 133. This is performed by the on-off valve 133A provided in

Further, the processing liquid supply nozzle 130 is connected to a carbonated water supply source 234 via a pipe 131 and a pipe 134, and control of supply and stop of carbonic acid (CO ₂ / H ₂ O) to the processing liquid supply nozzle 130. Is performed by an on-off valve 134 </ b> A provided in the pipe 134.

Further, the processing liquid supply nozzle 130 is connected to a sulfuric acid supply source 235 via a pipe 131 and a pipe 135, and control of supply and stop of sulfuric acid (H ₂ SO ₄ ) to the processing liquid supply nozzle 130 is performed by a pipe. This is performed by an on-off valve 135 </ b> A provided at 135.

Further, the treatment liquid supply nozzle 130 is connected to an ozone water supply source 236 via a pipe 131 and a pipe 136, and supply and stop of ozone water (O ₃ / H ₂ O) to the treatment liquid supply nozzle 130 are performed. The control is performed by an on-off valve 136A provided in the pipe 136.

  The treatment liquid supply nozzle 130 is connected to a hydrochloric acid supply source 237 via a pipe 131 and a pipe 137, and supply and stop control of hydrochloric acid (HCl) to the treatment liquid supply nozzle 130 is provided in the pipe 137. This is performed by the open / close valve 137A.

Further, the treatment liquid supply nozzle 130 is connected to a sulfuric acid / hydrogen peroxide supply source 238 via a pipe 131 and a pipe 138, and supplies a sulfuric acid / hydrogen peroxide (H ₂ SO 4 / H ₂ O / H ₂ O ₂ ) treatment liquid. Control of supply and stop to the nozzle 130 is performed by an on-off valve 138A provided in the pipe 138.

  As described above, since one processing liquid supply nozzle 130 is used to supply each processing liquid to the surface of the wafer W, there is an effect that the configuration is simple.

  FIG. 2 is a diagram showing a control system of the substrate processing apparatus according to the present invention.

  The control unit 150 controls each part of the substrate processing apparatus 100 and includes an on-off valve control unit 151 corresponding to the processing liquid control unit and a drive motor control unit 152 corresponding to the drive unit control unit. . The on-off valve controller 150 controls the on-off operation of the on-off valve 132A, on-off valve 133A, on-off valve 134A, on-off valve 135A, on-off valve 136A, on-off valve 137A, and on-off valve 138A. The drive motor control unit 152 controls the number of rotations of the drive motor 110. In the control unit 150, the on-off valve control unit 151 and the drive motor control unit 152 are connected.

  Next, a plurality of types of processing operations of the substrate processing method according to the present invention and the substrate processing apparatus 100 described above will be described.

(First processing operation)
First, the first processing operation of the substrate processing apparatus 100 will be described. FIG. 3 is a flowchart showing a first processing operation of the substrate processing apparatus.

  First, the drive motor control unit 152 controls the drive motor 110 to rotate the wafer W held on the holding member 113 (the rotation speed of the wafer W at this time is 250 rpm to 350 rpm). The chemical solution is supplied to the surface of the wafer W to perform the chemical treatment of the wafer W (step S11).

  In addition, in the chemical treatment at this stage, sulfuric acid / hydrogen peroxide cleaning, ozone water cleaning, and RCA (Radio Corporation of America) cleaning can be considered. In the case of sulfuric acid / hydrogen peroxide cleaning, the on / off valve control unit 151 sets the on / off valve 138A to “open” so that sulfuric acid is supplied from the sulfuric acid / hydrogen peroxide supply source 238 to the surface of the wafer W from the processing liquid supply nozzle 130 via the pipe 138 and the pipe 131. Overwater is supplied to clean the surface of the wafer W with a chemical solution. In the case of ozone water cleaning, the on-off valve control unit 151 opens the on-off valve 136A, and the ozone water is supplied from the treatment liquid supply nozzle 130 to the surface of the wafer W from the ozone water supply source 236 through the pipe 136 and the pipe 131. To clean the surface of the wafer W with a chemical solution. In the case of RCA cleaning, although not shown in FIG. 1, cleaning with SC-1 treatment liquid with a predetermined ratio of ammonia water, hydrogen peroxide water, and water, or hydrochloric acid, hydrogen peroxide water, and water at a predetermined ratio. The surface of the wafer W is cleaned with the SC-2 processing liquid. When the chemical liquid processing of the wafer W in step S11 is completed, the on-off valve control unit 150 “closes” each on-off valve.

  Next, in a state in which the rotation of the wafer W is continued, the on-off valve control unit 151 opens the on-off valve 132A, and the processing liquid supply nozzle 130 is supplied from the pure water supply source 232 through the pipe 132 and the pipe 131. Then, pure water is supplied from the surface of the wafer W to the surface of the wafer W, and the surface of the wafer W is treated with pure water (step S12). Thereby, the surface of the wafer W is cleaned with pure water.

  When the pure water treatment in step S12 is completed, the open / close valve control unit 151 sets the open / close valve 133A to “open” while the rotation of the wafer W is continued, and the hydrofluoric acid supply source 233 passes through the pipe 133 and the pipe 131. Etching is performed by supplying hydrofluoric acid from the processing liquid supply nozzle 130 to the surface of the wafer W and performing HF processing on the surface of the wafer W (step S13).

  When the HF process in step S13 is completed, the on-off valve control unit 151 causes the on-off valve 133A to be “closed” and keeps the wafer W rotated for a period of 0.03 seconds to 10.00 seconds. Thereby, the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W (step S14).

  When the swing-off process in step S14 is completed, the surface of the wafer W is processed with the processing liquid obtained by adding 0.1% or less of acid to pure water, that is, pure water / acid treatment, while the rotation of the wafer W is continued. (Step S15).

For example, when the acid is hydrochloric acid (HCl), the on-off valve control unit 151 opens the on-off valve 132A and the on-off valve 137A, and a treatment liquid in which 0.1% or less of hydrochloric acid is added to pure water is supplied to the pipe 131. Then, the processing liquid is supplied from the processing liquid supply nozzle 130 to the surface of the wafer W, and the surface of the wafer W is cleaned. Further, when the acid is sulfuric acid (H ₂ SO ₄ ), the on / off valve control unit 151 opens the on / off valve 132A and the on / off valve 135A, and the treatment liquid is obtained by adding 0.1% or less sulfuric acid to pure water. The processing liquid applied to the surface of the wafer W is supplied from the processing liquid supply nozzle 130 via the pipe 131 to perform the cleaning process on the surface of the wafer W. Further, when the acid is carbonic acid (CO ₂ ), the opening / closing valve 134A is opened by the opening / closing valve control unit 151, and carbon dioxide in which 0.1% or less of carbon dioxide gas is dissolved in pure water is added to the piping 134 and the piping 131. Then, the surface of the wafer W is supplied to the surface of the wafer W from the processing liquid supply nozzle 130 to perform a cleaning process.

  When the cleaning process using pure water / acid treatment in step S15 is completed, the open / close valve control unit 151 sets the open / close valve 132A to “open” in a state where the rotation of the wafer W is continued, so that pure water is supplied to the surface of the wafer W. Supply and perform a pure water process (step S16). Thereby, the surface of the wafer W is cleaned with pure water.

  In step S13, after performing the etching process by performing the HF process on the surface of the wafer W, in step S14, the on-off valve control unit 151 sets the on-off valve 133A to “closed”, and 0.03 seconds to 10. The wafer W is kept rotated for a time of 00 seconds, and the wafer W is continuously rotated in step S15, and the surface of the wafer W is treated with a processing solution obtained by adding 0.1% or less acid to pure water. Therefore, after the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W, cleaning is performed by pure water / acid treatment, and as a result, the product after the etching treatment is performed. Is prevented from adhering to the surface of the wafer W. Also. Since there is an effect that the fluorine (F) concentration is lowered, the device characteristics of the wafer W are not adversely affected in the subsequent device manufacturing stage.

  In step S15, the pure water / acid treatment is performed by adding 0.1% or less of acid, that is, hydrochloric acid, sulfuric acid, or carbonic acid, to the pure water while the rotation of the wafer W is continued. The wafer W after the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W can be effectively cleaned.

  Further, in step S16, pure water is supplied to the surface of the wafer W to perform pure water treatment, so that the acid supplied in step S15 can be completely removed from the surface of the wafer W.

  When the pure water process in step S16 is completed, the drive motor control unit 152 controls the drive motor 110 to set the rotation speed of the wafer W held on the holding member 113 to 1000 rpm to 2000 rpm, and to dry the surface of the wafer W. This is performed (step S17). When the drying process for a predetermined time is performed, the drive motor 110 of the drive motor control unit 152 is controlled to stop the rotation of the wafer W. Thus, the series of first processing operations ends.

(Second processing operation)
Next, the second processing operation of the substrate processing apparatus 100 will be described. FIG. 4 is a flowchart showing a second processing operation of the substrate processing apparatus.

  First, the drive motor control unit 152 controls the drive motor 110 to rotate the wafer W held on the holding member 113 (the rotation speed of the wafer W at this time is 250 rpm to 350 rpm). The chemical solution is supplied to the surface of the wafer W to perform the chemical treatment of the wafer W (step S21). In the chemical solution processing at this stage, the same chemical solution cleaning as in step S11 of FIG. 3 described above is performed.

  When the chemical processing in step S21 is completed, the on / off valve control unit 151 sets the on / off valve 132A to “open” in a state where the rotation of the wafer W is continued, and the pure water supply source 232 through the pipe 132 and the pipe 131. Then, pure water is supplied from the processing liquid supply nozzle 130 to the surface of the wafer W to perform a pure water treatment on the surface of the wafer W (step S22). Thereby, the surface of the wafer W is cleaned with pure water.

  When the pure water treatment in step S22 is completed, the on / off valve control unit 151 opens the on / off valve 133A while the wafer W continues to rotate, and the hydrofluoric acid supply source 233 passes through the pipe 133 and the pipe 131. Etching is performed by supplying hydrofluoric acid from the processing liquid supply nozzle 130 to the surface of the wafer W and performing HF processing on the surface of the wafer W (step S23).

  When the HF process in step S23 is completed, the on-off valve control unit 151 sets the on-off valve 133A to “closed” and keeps the wafer W rotated for a period of 0.03 seconds to 10.00 seconds. Thereby, the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W (step S24).

  When the swing-off process in step S24 is completed, the open / close valve control unit 151 again opens the open / close valve 133A while the wafer W continues to rotate, and the hydrofluoric acid supply source 233 passes through the pipe 133 and the pipe 131. Etching is performed by supplying hydrofluoric acid from the processing liquid supply nozzle 130 to the surface of the wafer W and performing HF processing on the surface of the wafer W (step S25).

  When the HF process in step S25 is completed, the surface of the wafer W, that is, the pure water / acid process is performed with a processing solution obtained by adding 0.1% or less of acid to pure water (step S26).

For example, when the acid is hydrochloric acid (HCl), the on-off valve control unit 151 opens the on-off valve 132A and the on-off valve 137A, and a treatment liquid in which 0.1% or less of hydrochloric acid is added to pure water is connected to the pipe 131. Then, the processing liquid is supplied from the processing liquid supply nozzle 130 to the surface of the wafer W, and the surface of the wafer W is cleaned. Further, when the acid is sulfuric acid (H ₂ SO ₄ ), the on / off valve controller 151 turns the on / off valve 132A and the on / off valve 135A to “open” to add 0.1% or less sulfuric acid to pure water. The processing liquid applied to the surface of the wafer W is supplied from the processing liquid supply nozzle 130 via the pipe 131 to perform the cleaning process on the surface of the wafer W. Further, when the acid is carbonic acid (CO ₂ ), the on-off valve control unit 151 opens the on-off valve 134A, and carbon dioxide in which carbon dioxide gas is dissolved to 0.1% or less in pure water is supplied via the pipe 131. By supplying the surface of the wafer W from the processing liquid supply nozzle 130, the surface of the wafer W is cleaned.

  When the cleaning process using pure water / acid process in step S26 is completed, the open / close valve control unit 151 opens the open / close valve 132A while the wafer W continues to rotate to perform pure water treatment (step S27). ). Thereby, the surface of the wafer W is cleaned with pure water.

  In step S23, after performing the etching process by performing the HF process on the surface of the wafer W, in step S24, the on-off valve control unit 151 sets the on-off valve 133A to “closed”, and 0.03 seconds to 10. The state in which the wafer W is kept rotated for a time of 00 seconds, and after the etching process is performed by performing the HF process on the surface of the wafer W in step S25, the rotation of the wafer W is continued in step S26. Then, since the surface of the wafer W is treated with a treatment liquid obtained by adding 0.1% or less acid to pure water, the hydrofluoric acid adhering to the surface of the wafer W was shaken off from the outer periphery of the wafer W. Later, the surface of the wafer W of fluorosilicic acid, which is a product after the etching process, is performed by etching again and cleaning with pure water / acid treatment. Deposition is suppressed. Also. Since there is an effect that the fluorine (F) concentration is lowered, the device characteristics of the wafer W are not adversely affected in the subsequent device manufacturing stage.

  In step S26, the pure water / acid treatment is performed by adding 0.1% or less of acid, ie, hydrochloric acid, sulfuric acid, or carbonic acid, to the pure water while the rotation of the wafer W is continued. The wafer W after the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W can be effectively cleaned.

  Furthermore, in step S27, pure water is supplied to the surface of the wafer W to perform pure water treatment, so that the acid supplied in step S26 can be completely removed from the surface of the wafer W.

  When the pure water treatment in step S27 is completed, the drive motor control unit 152 controls the drive motor 110 to set the rotation speed of the wafer W held on the holding member 113 to 1000 rpm to 2000 rpm, and to dry the surface of the wafer W. This is performed (step S28). When the drying process for a predetermined time is performed, the drive motor 110 of the drive motor control unit 152 is controlled to stop the rotation of the wafer W. Thus, the series of second processing operations is completed.

(Third processing operation)
Finally, the third processing operation of the substrate processing apparatus 100 will be described. FIG. 5 is a flowchart showing a third processing operation of the substrate processing apparatus.

  First, the drive motor control unit 152 controls the drive motor 110 to rotate the wafer W held on the holding member 113 (the rotation speed of the wafer W at this time is 250 rpm to 350 rpm). The chemical solution is supplied to the surface of the wafer W to perform the chemical treatment of the wafer W (step S31). In the chemical treatment at this stage, the same chemical cleaning is performed as in step S11 in FIG. 3 and step S21 in FIG. 5 described above.

  When the chemical processing in step S31 is completed, the on-off valve control unit 151 opens the on-off valve 132A while the wafer W continues to rotate, and the pure water supply source 232 through the pipe 132 and the pipe 131 is opened. Then, pure water is supplied from the processing liquid supply nozzle 130 to the surface of the wafer W to perform a pure water treatment on the surface of the wafer W (step S32). Thereby, the surface of the wafer W is cleaned with pure water.

  When the pure water treatment in step S32 is completed, the open / close valve control unit 151 sets the open / close valve 133A to “open” while the rotation of the wafer W is continued, and the hydrofluoric acid supply source 233 passes through the pipe 133 and the pipe 131. Etching is performed by supplying hydrofluoric acid from the processing liquid supply nozzle 130 to the surface of the wafer W and performing HF processing on the surface of the wafer W (step S33).

  When the HF process in step S33 is completed, the surface of the wafer W, that is, the pure water / acid process is performed with a processing solution obtained by adding 0.1% or less of acid to pure water while the rotation of the wafer W is continued. (Step S34).

For example, when the acid is hydrochloric acid (HCl), the on-off valve control unit 151 opens the on-off valve 132A and the on-off valve 137A, and a treatment liquid in which 0.1% or less of hydrochloric acid is added to pure water is connected to the pipe 131. Then, the processing liquid is supplied from the processing liquid supply nozzle 130 to the surface of the wafer W, and the surface of the wafer W is cleaned. Further, when the acid is sulfuric acid (H ₂ SO ₄ ), the on / off valve control unit 151 opens the on / off valve 132A and the on / off valve 135A, and the treatment liquid is obtained by adding 0.1% or less sulfuric acid to pure water. The processing liquid applied to the surface of the wafer W is supplied from the processing liquid supply nozzle 130 via the pipe 131 to perform the cleaning process on the surface of the wafer W. Further, when the acid is carbonic acid (CO ₂ ), the on-off valve control unit 151 opens the on-off valve 134A, and carbon dioxide in which 0.1% or less of carbon dioxide gas is dissolved in pure water is passed through the pipe 131. By supplying the surface of the wafer W from the processing liquid supply nozzle 130, the surface of the wafer W is cleaned.

  When the pure water / acid treatment in step S34 is completed, the on-off valve control unit 151 sets all the on-off valves to “closed” and keeps the wafer W rotated for 0.03 seconds to 10.00 seconds. To do. Thereby, the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W (step S35).

  When the swing-off process in step S35 is completed, the surface of the wafer W is processed again with a processing solution in which an acid of 0.1% or less is added to pure water while the rotation of the wafer W is continued (step S36). Specifically, the cleaning process for the surface of the wafer W is performed in the same manner as in step S34 described above.

  When the cleaning process by the pure water / acid process in step S36 is completed, the open / close valve 132A is opened by the open / close valve control unit 151 in a state where the rotation of the wafer W is continued (step S37). ). Thereby, the surface of the wafer W is cleaned with pure water.

  In step S33, after performing an etching process by performing an HF process on the surface of the wafer W, in step S34, an acid of 0.1% or less was added to pure water while the rotation of the wafer W was continued. The surface of the wafer W is processed with the processing liquid, and the open / close valve 133A is closed by the open / close valve control unit 151 in step S35, and the wafer W remains rotated for a time of 0.03 seconds or less. In step S36, the surface of the wafer W is processed with a processing solution obtained by adding 0.1% or less of acid to pure water while the rotation of the wafer W is continued in step S36. After the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W, cleaning is performed by pure water / acid treatment. As a result, the product of the fluorosilicic acid wafer W that is the product after the etching treatment Adhesion to the surface can be suppressed. Also. Since there is an effect that the fluorine (F) concentration is lowered, the device characteristics of the wafer W are not adversely affected in the subsequent device manufacturing stage.

  Further, in step S34 and step S36, in a state where the rotation of the wafer W is continued, 0.1% or less acid, that is, either hydrochloric acid, sulfuric acid or carbonic acid is added to pure water to perform pure water / acid treatment. Therefore, the wafer W after the hydrofluoric acid adhering to the surface of the wafer W is shaken off from the outer periphery of the wafer W can be effectively cleaned.

  Further, in step S37, pure water is supplied to the surface of the wafer W to perform pure water treatment, so that the acid supplied in step S36 can be completely removed from the surface of the wafer W.

  When the pure water process in step S37 is completed, the drive motor control unit 152 controls the drive motor 110 to set the wafer W held on the holding member 113 to 1000 rpm to 2000 rpm, and to dry the surface of the wafer W (step) S38). When the drying process for a predetermined time is performed, the drive motor control unit 152 controls the drive motor 110 to stop the rotation of the wafer W. Thus, the series of third processing operations ends.

  The present invention can be applied to a substrate processing apparatus and a substrate processing method for supplying a processing liquid to a substrate such as a semiconductor wafer, a glass substrate for liquid crystal display, or a plasma display panel and performing a predetermined process such as cleaning on the surface of the substrate. it can.

It is sectional drawing of the substrate processing apparatus which concerns on this invention. It is a figure which shows the control system of the substrate processing apparatus which concerns on this invention. It is a flowchart which shows the 1st processing operation of a substrate processing apparatus. It is a flowchart which shows the 2nd processing operation of a substrate processing apparatus. It is a flowchart which shows the 3rd processing operation of a substrate processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Substrate processing apparatus 110 ... Drive motor 112 ... Spin base 113 ... Holding member 130 ... Processing liquid supply nozzle 131 ... Pipe 132 ... Pipe 132A ... Open / close valve 133 ... Pipe 133A ... Open / close valve 134 ... Pipe 134A ... Open / close valve 135 ... Pipe 135A ... Open / close valve 136 ... Piping 136A ... Open / close valve 137 ... Pipe 137A ... Open / close valve 150 ... Control unit 151 ... Open / close valve control unit 152 ... Drive motor control unit 232 ... Pure water supply source 233 ... Hydrofluoric acid supply source 234 ... Carbonic acid supply Source 235 ... Sulfuric acid supply source 236 ... Ozone water supply source 237 ... Hydrochloric acid supply source 238 ... Sulfuric acid / hydrogen peroxide supply source

Claims (8)

A substrate processing apparatus for performing predetermined processing on a substrate,
Substrate holding means for holding the substrate;
Driving means for rotating the substrate holding means holding the substrate;
The surface of the substrate held by the substrate holding means was mixed with SC-1 treatment solution or hydrochloric acid / hydrogen peroxide solution / water mixed with sulfuric acid / hydrogen peroxide, ozone water, ammonia water / hydrogen peroxide solution / water as a chemical solution. Chemical supply means for supplying SC-2 treatment liquid;
First treatment liquid supply means for supplying a first treatment liquid containing hydrofluoric acid to the surface of the substrate held by the substrate holding means;
Second treatment liquid supply means for supplying a second treatment liquid obtained by adding hydrochloric acid, sulfuric acid, or carbonic acid to pure water on the surface of the substrate held by the substrate holding means;
After the chemical liquid processing with the chemical liquid from the chemical liquid supply means is performed on the substrate, the surface of the substrate is rotated by the first processing liquid supply means in a state where the substrate held by the substrate holding means is rotated by the driving means. When the processing is completed by supplying the first processing liquid to the substrate, the substrate is rotated without supplying the processing liquid to the surface of the substrate for a predetermined time, and the hydrofluoric acid is spun off from the outer periphery of the substrate. Control means for supplying a second processing liquid to the surface of the substrate by the second processing liquid supply means in a state where the substrate is rotated, and processing the surface of the substrate;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The control means includes a drive means control means for controlling the number of rotations of the drive means, supply and stop of the first treatment liquid from the first treatment liquid supply means, and second supply from the second treatment liquid supply means. And a processing liquid control means for controlling supply and stop of the processing liquid, respectively. The substrate processing apparatus according to claim 1 or 2, wherein
The substrate processing apparatus, wherein the second processing liquid is a processing liquid obtained by adding 0.1% or less of the acid to pure water. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus, wherein the first processing liquid supply means and the second processing liquid supply means are shared by a single nozzle. A substrate processing apparatus according to claim 1, wherein:
Further comprising pure water supply means for supplying pure water to the surface of the substrate held by the substrate holding means;
The control means performs pure water treatment by supplying pure water from the pure water supply means to the surface of the substrate before the treatment with the first treatment liquid is started after the chemical liquid treatment is completed. A substrate processing apparatus. A substrate processing method for performing predetermined processing on a substrate,
After performing chemical treatment by sulfuric acid / hydrogen peroxide cleaning, ozone water cleaning or RCA cleaning on the substrate, a first processing liquid containing hydrofluoric acid is supplied to the surface of the substrate while the substrate is rotated to A first step of processing;
A second step of rotating the substrate and shaking off the hydrofluoric acid from the outer periphery of the substrate without supplying the treatment liquid to the surface of the substrate;
A third step of treating the surface of the substrate by supplying a second treatment liquid obtained by adding hydrochloric acid, sulfuric acid, or carbonic acid to pure water to the surface of the substrate while the substrate is rotated;
A substrate processing method comprising: The substrate processing method according to claim 6, comprising:
The substrate processing method, wherein the second processing liquid is a processing liquid obtained by adding 0.1% or less of the acid to pure water. The substrate processing method according to claim 6 or 7, wherein
In the first step, the pure water treatment is performed by supplying pure water to the surface of the substrate before the treatment with the first treatment liquid is started after the chemical treatment is completed. .

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