JP2006270068A - Semiconductor chip cooling system, structure and manufacturing method of heat exchange device for the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cooling system of a CPU semiconductor chip or the like, a heat exchange device and its manufacturing method. <P>SOLUTION: A semiconductor chip cooling system comprises a fluid-cooled heat sink 23, a heat exchange device 31, a pumping device 25, and conduits 211 and 251 constituting the circulation path of a cooling fluid. This heat sink dissipates the heat generated of a semiconductor chip 21 to cool it. The heat exchange device blast-cools the heat of the cooling fluid, circulated via the conduits from the heat sink by the pumping device by a fan 241. The cooling fins and the heat sink pieces of the heat exchange device are formed, by coating the surface of a cast of carbon fine powders of a metal material having proper thermal conductivity and of a diamond-like structure or a molding formed of the metal material having proper thermal conductivity with carbons of a diamond-like structure. The carbons of the diamond-like structure are superior in thermal conductivity and can improve the cooling capacity. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor chip cooling system and a structure and manufacturing method of the heat exchange device, characterized in that the semiconductor chip cooling system is formed from a metal material and a heat conductive material made of carbon having a diamond-like structure.

The application of large-scale integrated circuits by semiconductor processes has already been widely used in general society in recent years. For example, personal computers, server machines, portable memories, various types of integrated circuits for driving, intelligent home appliances, etc. In addition, the rapid growth of the semiconductor industry has been promoted, and the government has promoted the “Two trillion star industrial economic development plan”, which includes the development and development plan of the semiconductor industry, They are trying to build a competitive edge in technology. The importance of the semiconductor industry has already become a high common consciousness of the people, not only to help improve the national competitiveness, but also to enable the people to fully enjoy the convenience brought about by the application of the semiconductor industry.

With the rapid development of the semiconductor industry, it is desirable for large-scale integrated circuits to further reduce the volume and increase the density of the manufacturing process, and each manufacturer invests a large amount of money to research and improve integrated circuits that are semiconductor manufacturing processes. Has been implemented. Among each type of integrated circuit, CPU semiconductor chip is the center of research and improvement, and it is applied to the core system such as personal computer and each type of server machine. The processing performance of personal computer and server depends mainly on the performance of CPU semiconductor chip. Has been decided. With the improvement of the CPU semiconductor chip manufacturing process, the CPU clock frequency has increased and the performance has improved, but on the other hand, the increase in the amount of generated heat cannot be avoided, and when the generated heat cannot be removed in a timely manner, The performance of electronic components of CPU semiconductor chips is degraded and may be damaged. Efficiently removing heat from the system is a very important issue. Applications of various cooling systems and heat conduction materials In this case, it is expected to improve the cooling efficiency.

As shown in FIG. 1, a known forced air cooling type semiconductor chip cooling system includes a semiconductor chip 11, a substrate 12, and a heat sink 13. The semiconductor chip 11 includes a plurality of pins 111, the semiconductor chip 11 is connected to a substrate 12, and the substrate 12 is a known main substrate and graphic board. The heat sink 13 includes a fan 131, and can adhere to the upper surface of the semiconductor chip 11 by applying cooling grease 132. Heat generated during operation of the semiconductor chip 11 is transmitted to the heat sink 13 via the cooling grease 132, and the heat sink 13 can release heat to the outside by an air flow formed by the fan 131.

However, since the cooling system of the system described above is configured to discharge heat to the outside by the air flow formed by the fan 131, the cooling capacity is limited by the size and rotation speed of the fan 131, and heat is immediately transferred from the heat sink 13 to the outside. Thus, the semiconductor chip 11 cannot immediately conduct heat to the heat sink 13, and excessive heat accumulates in the semiconductor chip 11, leading to performance degradation.

As shown in FIG. 2, the known water-cooled semiconductor chip cooling system includes a semiconductor chip 21, a substrate 22, a heat sink 23, a heat exchange device 24, and a pump device 25. The semiconductor chip 21 includes a plurality of pins 211, and the semiconductor chip 21 is connected to a main board 22, which can be a known main board or graphic board. The heat sink 23 adheres to the upper surface of the semiconductor chip 21 by applying cooling grease 231. The pump device 25, the heat sink 23, and the heat exchange device 24 can be further connected to each other by a conduit 251. The pump device 25 sends a water flow and circulates between the heat sink 23 and the heat exchange device 24 via the conduit 251. It can be made to flow.

Heat generated during operation of the semiconductor chip 21 can be conducted to the heat sink 23 via the cooling grease 231. The heat sink 23 conducts heat to the heat exchange device by the circulation flow of the water flow, and the heat exchange device 24 Further, a fan 241 is provided, and heat of the heat exchange device 24 can be released to the outside by an air flow formed by the fan 241.

The cooling system of the above system circulates and flows a high specific heat material such as water and conducts heat to the heat exchange device 24. Therefore, the cooling capacity is increased by accelerating the circulation and flow rate of water passing through the pump device 25. Can be improved. Since the heat exchanging device 24 is installed on the substrate 22, there is no volume limitation, and the cooling capacity can be improved by increasing the size of the fan and increasing the rotational speed. Therefore, this system is excellent in improving the cooling efficiency of the semiconductor chip 21.

The water flow velocity can accelerate the water circulation by pressurizing the pump device, but if the heat exchange material is not good in heat conduction, the heat carried by the water flow cannot be processed immediately and still cooled. This will lead to a defect problem. Many of the heat conduction materials that are currently applied to heat exchange devices in general are made of aluminum, copper, silver, or alloys, and have high heat conduction coefficient characteristics, but dramatically improve the performance of semiconductor chips. In addition, the amount of heat generated by the heat conduction material is greatly increased, and the high cooling efficiency already required by these heat conduction materials cannot be satisfied, and research on new heat conduction materials has become an important issue.

Known diamond materials have become one of the most important materials in the process than before because they have characteristics such as high hardness, high thermal conductivity, light transmittance in a wide wavelength range, and corrosion resistance. Its thermal conductivity coefficient is 5 times that of copper at room temperature, and the infrared radiation of diamond is further enhanced at high temperatures, and since it is easily cooled and its thermal expansion coefficient is small, it is expected to improve the cooling efficiency at high temperatures. . The high cooling effect of diamond is generally widely used to determine whether the diamond is genuine. However, the cost of natural diamond is very high, and the technology of artificial diamond has been developed to lower the manufacturing cost in order to provide it for industrial application. Artificial diamond technology is a well-known technology, and various technologies and production methods have already been developed. However, there are most methods of directly decomposing using a charcoal compound, such as MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition), HFCVD (Hot Filament Chemical Vapor Deposition) can form a film with a polycrystalline diamond film, and the physical characteristics of this polycrystalline diamond film can be equivalent to those of natural diamond. Thus, attempts have been made to apply diamond in a wide range of industries.
JP 2005-347500 A JP 2004-173233 A

The structure and manufacturing method of the semiconductor chip cooling system and the heat exchange device thereof provided by the present invention can satisfy the semiconductor chip cooling efficiency currently required, greatly improve the operational quality of the semiconductor chip, and the semiconductor The process not only increases the industrial competitive rate of integrated circuits, but also allows users of products that use integrated circuits to enjoy the highest quality.

The present invention provides a structure and manufacturing method of a semiconductor chip cooling system and its heat exchange device. The semiconductor chip cooling system includes a heat sink, a heat exchange device, a pump device, and at least two conduits. The heat exchanging device includes a plurality of fin-type heat sink pieces, and the fin-type heat sink pieces are formed by an injection molding method, a cutting technology molding method, a pressing technology method, and a powder injection technology molding method. The plurality of fin-type heat sink pieces thus formed can form a heat exchange device by a folding method and a welding method. The heat exchange device can form a plurality of through holes on a plurality of fin-type heat sink pieces of the heat exchange device using a drill method. The heat exchange device is formed of a heat conductive material, and the heat conductive material is formed of a metallic material and diamond-like carbon. The heat conductive material may be copper, aluminum, silver, an alloy, or other metal material having a high thermal conductivity, and the diamond-like carbon may be diamond. In addition to this, carbon having a diamond-like structure may cover the surface of the metal material, or may be directly mixed in the metal material, or may be provided with both at the same time. The manufacturing method of the heat conductive material applied to the heat exchange device can be CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), melting, or other material maintenance methods. The above heat sink can be greatly increased in the cooling efficiency of the heat exchange device by being covered or directly mixed with diamond-like carbon having a high thermal conductivity coefficient.

The structure and the manufacturing method of the semiconductor chip cooling system and its cooling exchange apparatus provided by the present invention greatly improve the cooling efficiency and solve the problem of heat generation that occurs in large quantities in the integrated circuit semiconductor chip.

As shown in FIG. 3, the semiconductor chip cooling system of the present invention includes a semiconductor chip 21, a substrate 22, a heat sink 23, a heat exchange device 31, and a pump device 25. The semiconductor chip 21 can be composed of a CPU, and includes a plurality of pins 211 to connect the semiconductor chip 21 to the substrate 22, and the substrate 22 is preferably a known main substrate or graphic board. The heat sink 23 adheres to the upper surface of the semiconductor chip 21 by applying cooling grease 231. The pump device 25, the heat sink 23, and the heat exchange device 31 are further connected to each other by a conduit 251, and the pump device 25 sends out a fluid having a high specific heat coefficient and passes between the heat sink 23 and the heat exchange device 31 via the conduit 251. To circulate. The heat exchanging device 31 is made of a heat conductive material, and the heat conductive material is made of a metal material and diamond-like carbon, and the metal material is made of copper, aluminum, silver, an alloy, or other heat conductive material. It is made of a metal material having a high coefficient, and the diamond-like carbon can be made of diamond. In addition, the diamond-like carbon can be used only to cover the surface of the metal material, or can be mixed directly into the metal material, or both of the above can be used simultaneously.

Heat generated during operation of the semiconductor chip 21 is conducted to the heat sink 23 via the cooling grease 231, and the heat sink 23 conducts heat to the heat exchange device 31 via the circulation flow of the water flow, and the heat exchange device 31. Further includes an air flow generation device 241, and releases heat of the heat exchange device 31 to the outside by an air flow formed by the air flow generation device 241.

As shown in FIG. 4, one fin-type heat sink piece 32 of the heat exchanging device 31 shown in FIG. 3 is drilled with a precision drill to form at least one through hole 321. The heat exchanger 31 is formed by welding and is formed of a metal material and diamond-like carbon, and the metal material is made of copper, aluminum, silver. Alternatively, it is made of an alloy or other metal material having a high thermal conductivity, and the diamond-like carbon can be made of diamond. As shown in FIG. 5, the heat exchange device 31 has a structure in which a conduit 251 is connected to the inside of the welded heat exchange device 31, and a through hole 321 is formed on the heat exchange device that has been assembled. In addition, the assembled heat exchange device is formed of a metal material and diamond-like carbon, and the metal material is copper, aluminum, silver, an alloy, or other metal material having a high thermal conductivity coefficient. The carbon having the diamond-like structure can be made of diamond. The through-hole 321 formed on the heat exchange device that has been assembled becomes an opening for allowing the fluid to enter. The fluid flows in the heat sink 23 and conducts heat to the heat exchange device 31. Heat is released to the outside by the airflow that forms.

  As shown in the above-mentioned embodiments, the heat exchange device 31 is formed of the heat conductive material of the present invention, and since the heat conduction coefficient is high, the heat exchange device 31 can quickly accept the heat carried by the water flow. The fluid is pressurized by the pump device 25 and can circulate and flow quickly between the heat sink 23 and the heat exchange device 31. The heat of the heat sink 23 is quickly carried to the heat exchange device 31, and the heat Further, the efficiency of the exchange device 31 can be increased by the airflow generation device 241. The airflow generation device is a fan, which improves the effect of releasing the heat of the heat exchange device 31 to the outside, and improves the cooling efficiency of the entire system. Can be improved. The cooling efficiency of the semiconductor chip 21 can be improved via the above-described system.

As shown in FIG. 6, the manufacturing method of the heat exchange device of the semiconductor chip cooling system of the present invention adopts a known metal injection molding technique, and includes a casting raw material feeder 41, a casting raw material injection device 42, and a die cast. It consists of a mold 43. In order to perform metal injection molding, the casting raw material of the casting raw material supply device 41 is press-fitted into the die cast mold 43 via the casting raw material injection device 42 to fill the cavity 44. The casting raw material can be made of metal or a material in which metal and diamond-like carbon fine powder are suspended. The metal material is copper, aluminum, silver, an alloy, or other metal material having a high thermal conductivity coefficient, and the melting point of carbon of the diamond-like structure is higher than the melting point of any of the aforementioned metals. And diamond-like carbon can be combined to form a cast product.
The structure of the metal injection molded product is the shape of a cavity 44. In the embodiment, the shape of the cavity 44 can be, for example, a fin-type heat sink piece 32 shown in FIG. At least one through hole 321 is formed, and a heat sink assembled and welded as shown in FIG. 5 and a heat exchange device 31 as shown in FIG. 3 are formed by a welding method.

As shown in FIG. 7, another semiconductor chip cooling system heat exchange apparatus manufacturing method according to the present invention employs a well-known MPECVD (Microwave Enhanced Chemical Vapor Deposition), and uses fine structure carbon to form a metal. A surface is formed, and as a special example, it is applied to the surface of a heat exchange device 31 as shown in FIG. In the reaction process, first, a gas mixture to be reacted is sent from the gas inlet 51 to the gas reactant 52, and at the same time, the microwave transmitter 53 generates a microwave to activate the gas mixture to cause an ionization reaction. In addition, a carbon film having a diamond-like structure is formed on the surface of the metal material 55 on the support portion 54, and the carbon having the diamond-like structure can be made of diamond. The metal material 55 can form a heat exchange device by the forming method using the device shown in FIG. 6, and the heat exchange device is made of copper, aluminum, silver, an alloy thereof, or other metal material having a high heat conduction coefficient. The remaining gas is discharged via the waste outlet 56, and this reaction process can form a heat conductive material with the surface covered with diamond. The structure of the metal material 55 in this embodiment is bonded like a heat exchange device 31 shown in FIG. 3 after a diamond-like carbon film is deposited.

As shown in FIG. 8, the heat sink production method of another semiconductor chip cooling system according to the present invention uses a known IBS (Ion Beam Sputtering) method, and is one of IBS (Ion Beam Sputtering) PVD. (Physical Vapor Deposition) is used to form fine structure carbon on a metal surface, in particular, on the surface of the heat exchange device 31 shown in FIG. The angle between the angle of the first ion gun 62 and the ion beam emission direction of the first ion gun 62 is about 45 degrees. The carbon particles having a diamond-like structure hit and scattered by the first ion gun 62 are the second ion gun 63. To the carbon fine particles via the second ion gun 63. By depositing the opposite metallic material 64 on the surface to be film-formed giving an energy, carbon film of uniform diamond-like structure on the surface of the metallic material 64 is formed.
The metal material is a heat sink piece formed by the method shown in FIG. 6, and the heat sink piece is formed of copper, aluminum, silver, an alloy thereof, or other metal material having a high thermal conductivity, After the reaction, the remaining diamond-like carbon particles are discharged through the waste outlet 65. The metal material structure 64 in this embodiment is joined like a heat exchange device 31 shown in FIG. 3 after the diamond-like carbon film is deposited.

In the present invention, preferred embodiments have been disclosed as described above. However, the present invention is not limited to the present invention, and any person who is familiar with the technology can use various methods within the spirit and scope of the present invention. Therefore, the protection scope of the present invention is based on the content specified in the claims.

It is explanatory drawing of a well-known discharge-type semiconductor chip cooling system. It is explanatory drawing of a well-known water cooling type semiconductor chip cooling system. It is explanatory drawing of the water cooling type semiconductor chip cooling system of this invention. It is explanatory drawing of one fin type heat sink piece of the heat exchange apparatus structure of this invention. It is explanatory drawing of the fin type heat sink piece welded of the heat exchange apparatus structure of this invention. It is explanatory drawing of the metal powder injection molding method (MIM; Metal Injection Molding) of the heat exchange apparatus of the semiconductor chip cooling system of this invention. It is explanatory drawing of MPECVD (Microwave Enhanced Chemical Vapor Deposition) of the heat exchange apparatus of the semiconductor chip cooling system of this invention. It is explanatory drawing of IBS (Ion Beam Sputtering) of the heat exchange apparatus of the semiconductor chip cooling system of this invention.

Explanation of symbols

11 Semiconductor chip 111 Pin 12 Substrate 13 Heat sink 131 Fan 132 Cooling grease 21 Semiconductor chip 211 Pin 22 Substrate 23 Heat sink 231 Cooling grease 24 Heat exchange device 241 Air flow generator 25 Pump device 251 Conduit 31 Heat exchange device 32 Fin-type heat sink piece 321 Hole 41 Casting material supply device 42 Casting material injection device 43 Die-casting die 44 Cavity 51 Gas inlet 52 Gas reaction chamber 53 Microwave transmitter 54 Support 55 Metal material structure 56 Waste air outlet 61 Target 62 First ion gun 63 Second ion gun 64 Metal material structure 65 Waste air outlet

Claims (38)

It consists of a liquid cooling heat sink, a heat exchange device, a conduit that constitutes the circulation path of the cooling fluid, a pump device,
The heat sink is disposed in contact with the semiconductor chip to conduct heat generation of the semiconductor chip, and the cooling fluid from the heat sink is configured to circulate between the heat exchange device by driving the pump device,
The heat exchange device includes a plurality of fin-type heat sink pieces, and the fin-type heat sink pieces are formed by molding a heat conductive material in which a metal material and diamond-structured carbon are mixed, or these molded bodies or It consists of a molded body in which a diamond-structured carbon film is formed on the surface of the molded body made of a metal material, etc.
A semiconductor chip cooling system characterized by that. The semiconductor chip cooling system according to claim 1, wherein the semiconductor chip is a CPU. The semiconductor chip cooling system according to claim 1, wherein the diamond-like carbon is diamond. The semiconductor chip cooling system according to claim 1, wherein the metal is made of a copper material. The semiconductor chip cooling system according to claim 1, wherein the metal is made of silver. The semiconductor chip cooling system according to claim 1, wherein the metal is made of an aluminum material. The semiconductor chip cooling system according to claim 1, wherein the metal is made of a metal alloy material of a metal having a high thermal conductivity coefficient. 2. The semiconductor chip cooling system according to claim 1, wherein the diamond-structured carbon film is formed by CVD (Chemical Vapor Deposition). The semiconductor chip cooling system according to claim 1, wherein the diamond-structured carbon film is formed by PVD (Physical Vapor Deposition). The semiconductor chip cooling system according to claim 1, wherein the molded body is formed of a dissolved material.   2. The semiconductor chip cooling system according to claim 1, wherein the heat exchange device includes a plurality of fin-type heat sink pieces.   The semiconductor chip cooling system according to claim 11, wherein the molded body constituting the fin-type heat sink piece is formed by injection molding.   The semiconductor chip cooling system according to claim 11, wherein the molded body constituting the fin-type heat sink piece is formed by a cutting technique. The semiconductor chip cooling system according to claim 11, wherein the molded body constituting the fin-type heat sink piece is formed by press working. The semiconductor chip cooling system according to claim 11, wherein the molded body constituting the fin-type heat sink piece is formed by powder molding. 12. The semiconductor chip cooling system according to claim 11, wherein the molded body constituting the plurality of fin-type heat sink pieces serves as the heat exchange device formed by folding. The semiconductor chip cooling system according to claim 11, wherein the plurality of fin-type heat sink pieces serve as the heat exchange device formed by welding. The semiconductor chip cooling system according to claim 11, wherein the plurality of fin-type heat sink pieces include a plurality of through holes formed by a drill. 12. The semiconductor chip cooling system according to claim 11, wherein the fin heat sink piece is made of a heat conductive material.   The semiconductor chip cooling system according to claim 1, wherein the heat exchange device further includes an airflow generation device.   21. The semiconductor chip cooling system according to claim 20, wherein the airflow generation device is a fan.   The semiconductor chip cooling system according to claim 1, wherein the fluid is water. A plurality of fins formed of a molded body in which a heat conductive material in which a metal material and diamond-structured carbon are mixed is molded, or a molded body in which a diamond-structured carbon film is formed on the surface of the molded body made of these molded body or metal material. Mold heat sink pieces,
A method of manufacturing a heat exchange device comprising each step of forming a plurality of through holes in the fin type heat sink piece by drilling and joining the plurality of fin type heat sink pieces to form the heat exchange device.   24. The method of manufacturing a heat exchange device according to claim 23, wherein the diamond-like carbon is diamond.   The method of manufacturing a heat exchange device according to claim 23, wherein the metal is a copper material. The method of manufacturing a heat exchange device according to claim 23, wherein the metal is a silver material. The method of manufacturing a heat exchange device according to claim 23, wherein the metal is an aluminum material. The method for manufacturing a heat exchange device according to claim 23, wherein the metal is a metal alloy material having a high thermal conductivity coefficient. 24. The method of manufacturing a heat exchange device according to claim 23, wherein the method of forming the diamond-like structure carbon film is by CVD (Chemical Vapor Deposition). 24. The method of manufacturing a heat exchange device according to claim 23, wherein the method of forming the diamond-like structure carbon film is based on PVD (Physical Vapor Deposition). 24. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces is formed of a molten material. 24. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces is formed by an injection molding method. 24. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces is formed by a cutting method. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces is formed by a press working method. 24. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces is formed by a powder molding method. The method of manufacturing a heat exchange device according to claim 23, wherein the molded body constituting the plurality of fin-type heat sink pieces forms the plurality of through holes by a drill. The heat exchange apparatus manufacturing method according to claim 23, wherein the plurality of fin-type heat sink pieces are joined by a welding method. The method according to claim 23, wherein the number of fin-type heat sink pieces are joined in a folding manner.

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