JP2006269507A - Groove formation method for forming groove on wafer by applying laser beams - Google Patents

Groove formation method for forming groove on wafer by applying laser beams Download PDF

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JP2006269507A
JP2006269507A JP2005081832A JP2005081832A JP2006269507A JP 2006269507 A JP2006269507 A JP 2006269507A JP 2005081832 A JP2005081832 A JP 2005081832A JP 2005081832 A JP2005081832 A JP 2005081832A JP 2006269507 A JP2006269507 A JP 2006269507A
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groove
width direction
separation line
laser beam
forming step
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JP4684697B2 (en
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Satoshi Genda
悟史 源田
Nobuyasu Kitahara
信康 北原
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Disco Corp
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Disco Abrasive Systems Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a groove formation method for forming a groove by applying laser beams to a wafer, where the wafer can be broken along a separation line fully reliably by applying outer force to the wafer. <P>SOLUTION: The formation of the groove by applying laser beams is repeated for a plurality of times in a required form, thus forming grooves 10, 16 where the bottom section is nearly flat instead of being tapered. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ウエーハの分離ラインに沿ってレーザ光線を照射して分離ラインに沿って延びる溝を形成する溝形成方法に関する。   The present invention relates to a groove forming method for forming a groove extending along a separation line by irradiating a laser beam along the separation line of the wafer.

半導体デバイスの製造においては、当業者には周知の如く、ウエーハの表面に格子状に配列した分離ライン（一般にストリートと称されている）によって多数の矩形領域を区画し、かかる矩形領域の各々に半導体回路を形成している。しかる後に、ウエーハを分離ラインに沿って分離して矩形領域を個々に分離し、かくして半導体デバイスを生成している。分離ラインに沿ったウエーハの分離は、通常、ダイヤモンド粒子を含有した回転切断刃によってウエーハを分離ラインに沿って切断することによって遂行されているが、特にウエーハがＧａＡｓ或いはサファイヤの如き難切削材から構成されている場合には、下記特許文献１に開示されている如く、回転切断刃による切断に代えて、ウエーハの分離ラインに沿ってレーザ光線を照射して分離ラインに沿って溝を形成し、次いでウエーハに外力を加えて溝に沿ってウエーハを破断することが提案されている。
特開平１０−３０５４２０号公報 In the manufacture of semiconductor devices, as is well known to those skilled in the art, a large number of rectangular areas are defined by separation lines (generally referred to as streets) arranged in a lattice pattern on the surface of the wafer. A semiconductor circuit is formed. Thereafter, the wafer is separated along a separation line to separate the rectangular regions individually, thus producing a semiconductor device. Separation of the wafer along the separation line is usually performed by cutting the wafer along the separation line with a rotary cutting blade containing diamond particles. In particular, the wafer is separated from difficult-to-cut materials such as GaAs or sapphire. In the case where it is configured, as disclosed in Patent Document 1 below, instead of cutting with a rotary cutting blade, a laser beam is irradiated along the separation line of the wafer to form a groove along the separation line. Then, it has been proposed to apply an external force to the wafer to break the wafer along the groove.
JP-A-10-305420

而して、レーザ光線を照射して分離ラインに沿って溝を形成することを含む従来の方法には、ウエーハに外力を加えた時にウエーハが分離ラインに沿って破断されることなく、ウエーハの破断が分離ラインからずれて進行してしまう傾向があるという問題がある。   Thus, in the conventional method including forming a groove along the separation line by irradiating a laser beam, the wafer is not broken along the separation line when an external force is applied to the wafer. There is a problem that the fracture tends to proceed with deviation from the separation line.

本発明は上記事実に鑑みてなされたものであり、その主たる技術的課題は、ウエーハに外力を加えることによってウエーハを充分確実に分離ラインに沿って破断することを可能にする溝を、ウエーハにレーザ光線を照射して形成する、新規且つ改良された溝形成方法を提供することである。   The present invention has been made in view of the above-mentioned facts, and a main technical problem thereof is to provide a groove on the wafer that allows the wafer to be sufficiently broken along the separation line by applying an external force to the wafer. It is to provide a new and improved groove forming method which is formed by irradiation with a laser beam.

本発明者等は鋭意検討の結果、従来の溝形成方法においては、レーザ光線を照射することによって形成される溝は、その底部が下方に向かって先細形態であるが、かような形態の溝ではなく、レーザ光線の照射による溝の形成を所要様式で複数回繰り返し遂行して、底面が略平坦な溝を形成することによって、上記主たる技術的課題を達成することができることを見出した。   As a result of intensive studies, the present inventors have found that in the conventional groove forming method, the groove formed by irradiating the laser beam has a tapered shape with its bottom portion tapered downward. Instead, it has been found that the above-mentioned main technical problem can be achieved by repeatedly forming a groove by irradiating a laser beam several times in a required manner to form a groove having a substantially flat bottom surface.

即ち、本発明によれば、上記主たる技術的課題を達成する溝形成方法として、ウエーハの分離ラインに沿ってレーザ光線を照射して該分離ラインに沿って延びる溝を形成する溝形成方法において、
該分離ラインにおける第一の幅方向所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第一の溝部を形成する第一の溝部形成工程と、
該第一の溝部形成工程の後に、該分離ラインにおける、該第一の幅方向所定部位の片側に隣接する第二の幅方所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第二の溝部を形成する第二の溝部形成工程と、
該第二の溝部形成工程の後に、該分離ラインにおける、該第一の幅方向所定部位の他側に隣接する第三の幅方向所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第三の溝部を形成する第三の溝部形成工程と、
を含み、底部が下方に向かって先細形態でない溝を形成する、ことを特徴とする溝形成方法が提供される。 That is, according to the present invention, as a groove forming method for achieving the main technical problem, a groove forming method for irradiating a laser beam along a wafer separation line to form a groove extending along the separation line.
A first groove forming step of forming a first groove extending along the separation line by irradiating a laser beam along the first width direction predetermined portion in the separation line;
After the first groove forming step, the separation line is irradiated with a laser beam along the second width predetermined portion adjacent to one side of the first width direction predetermined portion, along the separation line. A second groove part forming step of forming a second groove part extending by
After the second groove forming step, the separation line is irradiated with a laser beam along a third width direction predetermined portion adjacent to the other side of the first width direction predetermined portion in the separation line. A third groove forming step for forming a third groove extending along the line;
And forming a groove whose bottom portion is not tapered toward the bottom.

好ましくは、該第一の幅方向所定部位と該第二の幅方向所定部位との幅方向間隔と該第一の幅方向所定部位と該第三の幅方向所定部位との幅方向間隔とは実質上同一である。該第三の溝部形成工程の後に、該分離ラインにおける該第一の幅方向所定部位に沿ってレーザ光線を照射して、該第一の溝部に重畳して第四の溝部を形成する第四の溝部形成工程と、該第四の溝部形成工程の後に、該分離ラインにおける該第二の幅方向所定部位に沿ってレーザ光線を照射して、該第二の溝部に重畳して第五の溝部を形成する第五の溝部形成工程と、該第五の溝部形成工程の後に、該分離ラインにおける該第三の幅方向所定部位に沿ってレーザ光線を照射して、該第三の溝部に重畳して第六の溝部を形成する第六の溝部形成工程とを含むのが好適である。更に、該第六の溝部形成工程の後に、該分離ラインにおける該第一の幅方向所定部位に沿ってレーザ光線を照射して、該第一の溝部及び該第三の溝部に重畳して第七の溝部を形成する第七の溝部形成工程を含むのが好ましい。   Preferably, a width direction interval between the first width direction predetermined portion and the second width direction predetermined portion and a width direction interval between the first width direction predetermined portion and the third width direction predetermined portion are: It is substantially the same. After the third groove portion forming step, the fourth groove portion is formed by irradiating the laser beam along the first width direction predetermined portion of the separation line and forming a fourth groove portion overlapping the first groove portion. After the groove forming step and the fourth groove forming step, a laser beam is irradiated along the second width direction predetermined portion in the separation line, and the fifth groove portion is superimposed on the second groove portion. After the fifth groove portion forming step for forming the groove portion and the fifth groove portion forming step, the third groove portion is irradiated with a laser beam along the predetermined portion in the third width direction in the separation line. It is preferable to include a sixth groove portion forming step of forming a sixth groove portion so as to overlap. Further, after the sixth groove forming step, a laser beam is irradiated along the first predetermined portion in the first width direction in the separation line so as to overlap the first groove and the third groove. It is preferable to include a seventh groove forming step for forming the seventh groove.

底部が下方に向かって先細形態である溝を形成した場合にウエーハの破断が分離ラインからずれて進行する傾向がある理由は必ずしも明確ではないが、本発明者等は、先細形態の溝を形成した場合には一見すると先細底端に応力が集中し、従って溝の延在方向に沿って、即ち分離ラインに沿って、充分確実に破断を進行せしめることができるかの如くに思われるが、レーザ光線の照射によって材料を溶融除去して形成される溝の底端は溝全体に渡って分離ラインに沿って充分真直に延びるのではなく、種々の要因に起因して局部的に延在方向が変動しており、ウエーハの破断が変動する溝底端の延在方向に付随して変動することに起因してウエーハの破断が分離ラインからずれてしまうと推定している。これに対して、レーザ光線の照射による溝の形成を所要様式で複数回繰り返し遂行して、底部が先細形状ではなく、底面が略平坦な溝を形成すると、ウエーハの破断を充分確実に分離ラインに沿って進行せしめることができる。その理由は、各溝形成工程における底端の延在方向の変動が相互作用によって消失され或いは緩和される故であると推定している。   The reason why the wafer tends to break apart from the separation line when the bottom part is formed with a taper in the downward direction is not necessarily clear, but the present inventors have formed a taper form groove. In this case, it seems that stress concentrates on the tapered bottom end at first glance. Therefore, it seems as if the breakage can proceed sufficiently reliably along the extending direction of the groove, that is, along the separation line. The bottom end of the groove formed by melting and removing the material by laser beam irradiation does not extend sufficiently straight along the separation line over the entire groove, but extends locally due to various factors. It is estimated that the wafer breakage deviates from the separation line due to the fact that the wafer breakage fluctuates accompanying the extending direction of the groove bottom end. On the other hand, if the groove formation by laser beam irradiation is repeated several times in the required manner to form a groove with a bottom that is not tapered but a substantially flat bottom, the separation line can be reliably separated. You can make it progress along. The reason is presumed that the fluctuation in the extending direction of the bottom end in each groove forming step is eliminated or alleviated by the interaction.

以下、添付図面を参照して、本発明の溝形成方法の好適実施形態について更に詳述する。   Hereinafter, preferred embodiments of the groove forming method of the present invention will be described in more detail with reference to the accompanying drawings.

図１には、本発明の溝形成方法の好適実施形態が適用されるウエーハの典型例が図示されている。全体を番号２で示すウエーハは円板形状であり、その周縁には位置付け用切欠４が形成されている。ウエーハ２の表面には、格子状に配列された複数個の分離ライン６が形成されており、かかる分離ライン６によって複数個の矩形領域８が規定されている。矩形領域８の各々には回路が形成されている。かようなウエーハ２には、その分離ライン６に沿ってウエーハ２の表面或いは裏面からレーザ光線が照射され、分離ライン６に沿って溝が形成され、しかる後にウエーハ２に外力を加えることによってウエーハ２が分離ライン６に沿って破断され、矩形領域８が個々に分離される。   FIG. 1 shows a typical example of a wafer to which a preferred embodiment of the groove forming method of the present invention is applied. The wafer denoted as a whole by number 2 has a disk shape, and a positioning notch 4 is formed on the periphery thereof. A plurality of separation lines 6 arranged in a lattice pattern are formed on the surface of the wafer 2, and a plurality of rectangular regions 8 are defined by the separation lines 6. A circuit is formed in each of the rectangular areas 8. Such a wafer 2 is irradiated with a laser beam from the front or back surface of the wafer 2 along the separation line 6 to form a groove along the separation line 6, and then an external force is applied to the wafer 2. 2 is broken along the separation line 6 and the rectangular regions 8 are separated individually.

図２−ａ乃至ｃは、本発明に従って構成された溝形成方法の好適実施形態を図示している。かかる実施形態は図２−ａに図示する第一の溝部形成工程、図２−ｂに図示する第二の溝部形成工程、及び図２−ｃに図示する第三の溝部形成工程から構成されている。   2a-c illustrate a preferred embodiment of a groove forming method constructed in accordance with the present invention. This embodiment is composed of a first groove forming step shown in FIG. 2-a, a second groove forming step shown in FIG. 2-b, and a third groove forming step shown in FIG. 2-c. Yes.

図２−ａに図示する第一の溝部形成工程においては、ウエーハ２に形成されている分離ラインにおける、例えば幅方向中央部位でよい幅方向所定部位Ａに沿ってレーザ光線を照射し、かくして分離ライン６に沿って第一の溝部１０−１を形成する。照射するレーザ光線は、例えば波長３５５ｎｍ、出力５Ｗ、繰り返し周波数３０ｋＨｚ、スポット径１０μｍであるＹＡＧレーザ光線でよい。ＧａＡｓ或いはサファイヤから構成されているウエーハ２における分離ライン６に沿ってレーザ光線を照射（レーザ光線の送り速度は例えば６００ｍｍ／秒程度でよい）すると、図２−ａに明確に図示する如く、底部が先細形態である第一の溝部１０−１が分離ライン６に沿って形成される。   In the first groove forming step shown in FIG. 2A, the laser beam is irradiated along the predetermined portion A in the width direction, which may be, for example, the central portion in the width direction in the separation line formed on the wafer 2 and thus separated. A first groove 10-1 is formed along the line 6. The laser beam to be irradiated may be a YAG laser beam having a wavelength of 355 nm, an output of 5 W, a repetition frequency of 30 kHz, and a spot diameter of 10 μm, for example. When a laser beam is irradiated along the separation line 6 in the wafer 2 made of GaAs or sapphire (the laser beam feed speed may be about 600 mm / second, for example), as shown clearly in FIG. A first groove portion 10-1 is formed along the separation line 6.

次いで、図２−ｂに図示する第二の溝部形成工程においては、分離ライン６における、上記幅方向所定部位Ａの片側、図２−ｂにおいて左側、に隣接する第二の幅方向所定部位Ｂに沿ってレーザ光線を照射して第二の溝部１０−２を形成する。かかる第二の溝部１０−２も、第一の溝部１０−１と同様に底部が先細形態である。図２に図示する実施形態においては、第二の溝部１０−２の片側部、図２−ｂにおいて右側部、は第一の溝部１０−１の片側部、図２−ｂにおいて左側部、に重なり合って形成されている。   Next, in the second groove portion forming step illustrated in FIG. 2B, the second predetermined width portion B adjacent to the one side of the predetermined width direction A in the separation line 6 and the left side in FIG. The second groove portion 10-2 is formed by irradiating with a laser beam. The second groove portion 10-2 also has a tapered bottom at the bottom like the first groove portion 10-1. In the embodiment illustrated in FIG. 2, one side of the second groove 10-2, the right side in FIG. 2-b, the one side of the first groove 10-1, and the left side in FIG. Overlapping is formed.

図２−ｃに図示する第三の溝部形成工程においては、分離ライン６における、上記幅方向所定部位Ａの他側、図２−ｃにおいて右側、に隣接する第三の幅方向所定部位Ｃに沿ってレーザ光線を照射して第三の溝部１０−３を形成する。第一の幅方向所定部位Ａと第二の幅方向所定部位Ｂとの幅方向間隔Ｗ１と第一の幅方向所定部位と第三の幅方向所定部位Ｃとの間隔Ｗ２とは実質上同一であるのが好適である。かかる第三の溝部１０−３も、第一の溝部１０−１及び第二の溝部１０−２と同様に底部が先細形態である。図２に図示する実施形態においては、第三の溝部１０−３の片側部、図２−ｃにおいて左側部、は第一の溝部１０−１の他側部、図２−ｃにおいて右側部、に重なり合って形成されている。   In the third groove forming step shown in FIG. 2C, the third width direction predetermined portion C adjacent to the other side in the width direction predetermined portion A, the right side in FIG. A third groove portion 10-3 is formed by irradiating the laser beam along. The width direction interval W1 between the first width direction predetermined portion A and the second width direction predetermined portion B and the interval W2 between the first width direction predetermined portion and the third width direction predetermined portion C are substantially the same. Preferably there is. The third groove portion 10-3 also has a tapered bottom at the bottom like the first groove portion 10-1 and the second groove portion 10-2. In the embodiment illustrated in FIG. 2, one side of the third groove 10-3, the left side in FIG. 2-c, the other side of the first groove 10-1, the right side in FIG. 2-c, It is formed to overlap.

上述したとおりの第一乃至第三の溝部形成工程を遂行すると、図２−ｃに明確に図示する如く、相互に部分的に重なり合う第一の溝部１０―１、第二の溝部１０−２及び第三の溝部１０−３が協働して溝１０を規定し、かかる溝１０は略平坦な底を有する。かような溝１０を形成した後に、ウエーハ２に所要外力を加えれば、ウエーハ２を充分確実に分離ライン６に沿って破断することができる。   When the first to third groove forming steps as described above are performed, the first groove 10-1, the second groove 10-2, and the second groove 10-2 that partially overlap each other as clearly shown in FIG. The third groove portion 10-3 cooperates to define the groove 10, and the groove 10 has a substantially flat bottom. If a required external force is applied to the wafer 2 after the groove 10 is formed, the wafer 2 can be sufficiently broken along the separation line 6.

図２に図示する実施形態においては、第一の溝部１０−１を形成した後に、この第一の溝部１０−１の片側に隣接せしめて第二の溝部１０−２を形成し、次いで第一の溝部１０−１の他側に隣接せしめて第三の溝部１０−３を形成することが重要である。本発明者等の経験によれば、例えば図３に図示する如く、左から右に向けて順次に第一の溝部１２−１、第二の溝部１２−２及び第三の溝部１２−３を形成した場合、最終的に形成される溝１２の底の片縁、図３において右縁、から下方に細く延出する付加部１４が生成される傾向がある。そして、かような付加部１４が生成されると、ウエーハ２に外力を加えてウエーハ２を破断する際に破断が分離ライン６からずれて進行する傾向が発生する。   In the embodiment shown in FIG. 2, after forming the first groove 10-1, the second groove 10-2 is formed adjacent to one side of the first groove 10-1, and then the first groove 10-1 is formed. It is important to form the third groove portion 10-3 adjacent to the other side of the groove portion 10-1. According to the experience of the present inventors, for example, as shown in FIG. 3, the first groove portion 12-1, the second groove portion 12-2, and the third groove portion 12-3 are sequentially formed from left to right. When formed, there is a tendency that an additional portion 14 extending narrowly downward from one edge of the bottom of the groove 12 to be finally formed, the right edge in FIG. When such an additional portion 14 is generated, when the wafer 2 is broken by applying an external force to the wafer 2, the breakage tends to deviate from the separation line 6.

図４−ａ乃至ｇは、本発明に従って構成された溝形成方法の他の実施形態を図示している。かかる実施形態は図４−ａに図示する第一の溝部形成工程、図４−ｂに図示する第二の溝部形成工程、図４−ｃに図示する第三の溝部形成工程、図４−ｄに図示する第四の溝部形成工程、図４−ｅに図示する第五の溝部形成工程、図４−ｆに図示する第六の溝部形成工程及び図４−ｇに図示する第七の溝部形成工程から構成されている。   4a-g illustrate another embodiment of a groove forming method constructed in accordance with the present invention. Such an embodiment includes a first groove forming step shown in FIG. 4-a, a second groove forming step shown in FIG. 4-b, a third groove forming step shown in FIG. The fourth groove forming step shown in FIG. 4-e, the fifth groove forming step shown in FIG. 4-e, the sixth groove forming step shown in FIG. 4-f, and the seventh groove forming shown in FIG. 4-g. It consists of processes.

図４−ａに図示する第一の溝部形成工程においては、ウエーハ２に形成されている分離ラインにおける、例えば幅方向中央部位でよい幅方向所定部位Ａに沿ってレーザ光線を照射し、かくして分離ライン６に沿って第一の溝部１６−１を形成する。照射するレーザ光線は、図２に図示する実施形態の場合と同様に、例えば波長３５５ｎｍ、出力５Ｗ、繰り返し周波数３０ｋＨｚ、スポット径１０μｍであるＹＡＧレーザ光線でよい。ＧａＡｓ或いはサファイヤから構成されているウエーハ２における分離ライン６に沿ってレーザ光線を照射（レーザ光線の送り速度は例えば６００ｍｍ／秒程度でよい）すると、図４−ａに明確に図示する如く、底部が先細形態である第一の溝部１６−１が分離ライン６に沿って形成される。   In the first groove forming step shown in FIG. 4A, the laser beam is irradiated along the predetermined portion A in the width direction, which may be, for example, the central portion in the width direction in the separation line formed on the wafer 2 and thus separated. A first groove 16-1 is formed along the line 6. The laser beam to be irradiated may be, for example, a YAG laser beam having a wavelength of 355 nm, an output of 5 W, a repetition frequency of 30 kHz, and a spot diameter of 10 μm, as in the embodiment shown in FIG. When a laser beam is irradiated along the separation line 6 in the wafer 2 made of GaAs or sapphire (the laser beam feed speed may be about 600 mm / second, for example), as shown clearly in FIG. A first groove portion 16-1 having a tapered shape is formed along the separation line 6.

次いで、図４−ｂに図示する第二の溝部形成工程においては、分離ライン６における、上記幅方向所定部位Ａの片側、図４−ｂにおいて左側、に隣接する第二の幅方向所定部位Ｂに沿ってレーザ光線を照射して第二の溝部１６−２を形成する。かかる第二の溝部１６−２も、第一の溝部１６−１と同様に底部が先細形態である。図２に図示する実施形態の場合における第一の幅方向所定部位Ａと第二の幅方向所定部位Ｂとの幅方向間隔Ｗ１と比べて、図４に図示する実施形態における第一の幅方向所定部位Ａと第二の幅方向所定部位Ｂとの幅方向間隔Ｗ３は幾分大きく設定されており、第二の溝部１６−２は第一の溝部１６−１と実質上重なり合うことなくその片側に隣接して形成されている。   Next, in the second groove forming step illustrated in FIG. 4B, the second predetermined width portion B adjacent to the separation line 6 on one side of the predetermined width direction A in the separation line 6 and on the left side in FIG. A second laser beam 16-2 is formed by irradiating a laser beam along the line. The second groove portion 16-2 also has a tapered bottom at the bottom like the first groove portion 16-1. Compared to the width direction interval W1 between the first width direction predetermined portion A and the second width direction predetermined portion B in the case of the embodiment shown in FIG. 2, the first width direction in the embodiment shown in FIG. The width direction interval W3 between the predetermined portion A and the second width direction predetermined portion B is set to be somewhat large, and the second groove portion 16-2 is substantially overlapped with the first groove portion 16-1 on one side thereof. Is formed adjacent to.

図４−ｃに図示する第三の溝部形成工程においては、分離ライン６における、上記幅方向所定部位Ａの他側、図４−ｃにおいて右側、に隣接する第三の幅方向所定部位Ｃに沿ってレーザ光線を照射して第三の溝部１６−３を形成する。第一の幅方向所定部位Ａと第二の幅方向所定部位Ｂとの幅方向間隔Ｗ３と第一の幅方向所定部位と第三の幅方向所定部位Ｃとの間隔Ｗ４とは実質上同一であるのが好適である。かかる第三の溝部１６−３も、第一の溝部１６−１及び第二の溝部１６−２と同様に底部が先細形態である。第三の溝部１６−３は第一の溝部１６−１と実質上重なり合うことなくその他側に隣接して形成されている。   In the third groove portion forming step shown in FIG. 4C, the third width direction predetermined portion C adjacent to the other side in the width direction predetermined portion A, the right side in FIG. A third groove portion 16-3 is formed by irradiating the laser beam along. The width direction interval W3 between the first width direction predetermined portion A and the second width direction predetermined portion B and the interval W4 between the first width direction predetermined portion and the third width direction predetermined portion C are substantially the same. Preferably there is. The third groove portion 16-3 has a tapered bottom at the bottom like the first groove portion 16-1 and the second groove portion 16-2. The third groove 16-3 is formed adjacent to the other side without substantially overlapping the first groove 16-1.

次いで、図４−ｄに図示する第四の溝部形成工程においては、分離ライン６における上記第一の幅方向所定部位Ａに沿ってレーザ光線を照射して第四の溝部１６−４を形成する。この際のレーザ光線の照射は、上記第一乃至第三の溝部形成工程におけるレーザ光線の照射に比べて、次の点で異なる。即ちレーザ光線の焦点位置が例えば０．１ｍｍ程度下方に変位せしめられ、そして又レーザ光線の送り速度が例えば５００ｍｍ／秒に減速（従って単位面積当りの照射エネルギは増大）される。第四の溝部１６−４は第一の溝部１６−１に重畳せしめて形成され、従って第一の溝部１６−１を拡張した形態となる。第四の溝部１６−４の底部も先細形態である。   Next, in the fourth groove portion forming step shown in FIG. 4D, the fourth groove portion 16-4 is formed by irradiating the laser beam along the first width direction predetermined portion A in the separation line 6. . The laser beam irradiation in this case differs from the laser beam irradiation in the first to third groove forming steps in the following points. That is, the focal position of the laser beam is displaced downward by, for example, about 0.1 mm, and the feed rate of the laser beam is decelerated to, for example, 500 mm / second (thus, the irradiation energy per unit area is increased). The fourth groove portion 16-4 is formed so as to overlap the first groove portion 16-1, so that the first groove portion 16-1 is expanded. The bottom of the fourth groove 16-4 is also tapered.

図４−ｅに図示する第五の溝部形成工程においては、分離ライン６における上記第二の幅方向所定部位Ｂに沿ってレーザ光線を照射して第五の溝部１６−５を形成する。この際のレーザ光線の照射も、第四の溝部形成工程におけるレーザ光線の照射と同様に、上記第一乃至第三の溝部形成工程におけるレーザ光線の照射に比べて、レーザ光線の焦点位置が例えば０．１ｍｍ程度下方に変位せしめられ、そして又レーザ光線の送り速度が例えば５００ｍｍ／秒に減速（従って単位面積当りの照射エネルギは増大）される。第五の溝部１６−５は第二の溝部１６−２に重畳せしめて形成され、従って第二の溝部１６−２を拡張した形態となる。第五の溝部１６−５の底部も先細形態である。   In the fifth groove forming step shown in FIG. 4E, the fifth groove 16-5 is formed by irradiating a laser beam along the second predetermined portion B in the width direction in the separation line 6. The laser beam irradiation at this time is also similar to the laser beam irradiation in the fourth groove forming step, as compared with the laser beam irradiation in the first to third groove forming steps. The laser beam is moved downward by about 0.1 mm, and the feed rate of the laser beam is reduced to, for example, 500 mm / second (thus, the irradiation energy per unit area is increased). The fifth groove portion 16-5 is formed so as to overlap the second groove portion 16-2. Therefore, the second groove portion 16-2 is expanded. The bottom of the fifth groove 16-5 is also tapered.

図４−ｆに図示する第六の溝部形成工程においては、分離ライン６における上記第三の幅方向所定部位Ｃに沿ってレーザ光線を照射して第六の溝部１６−６を形成する。この際のレーザ光線の照射も、第四の溝部形成工程及び第五の溝部形成工程におけるレーザ光線の照射と同様に、上記第一乃至第三の溝部形成工程におけるレーザ光線の照射に比べて、レーザ光線の焦点位置が例えば０．１ｍｍ程度下方に変位せしめられ、そして又レーザ光線の送り速度が例えば５００ｍｍ／秒に減速（従って単位面積当りの照射エネルギは増大）される。第六の溝部１６−６は第三の溝部１６−３２に重畳せしめて形成され、従って第二の溝部１６−２を拡張した形態となる。第六の溝部１６−６の底部も先細形態である。   In the sixth groove forming step shown in FIG. 4F, the sixth groove 16-6 is formed by irradiating a laser beam along the third width direction predetermined portion C in the separation line 6. The irradiation of the laser beam at this time is also similar to the irradiation of the laser beam in the first to third groove forming steps, similarly to the irradiation of the laser beam in the fourth groove forming step and the fifth groove forming step, The focal position of the laser beam is displaced downward, for example, by about 0.1 mm, and the feed rate of the laser beam is reduced to, for example, 500 mm / second (thus, the irradiation energy per unit area is increased). The sixth groove portion 16-6 is formed so as to overlap the third groove portion 16-32. Therefore, the second groove portion 16-2 is expanded. The bottom of the sixth groove 16-6 is also tapered.

図４に図示する実施形態においては、更に図４−ｇに図示する第七の溝部形成工程が遂行される。この第七の溝部形成工程においては、分離ライン６における上記第一の幅方向所定部位Ａに沿ってレーザ光線を照射して第七の溝部１６−７を形成する。この際のレーザ光線は、上記第四の溝部形成工程乃至第六の溝部形成工程におけるレーザ光線と比べて、レーザ光線の焦点位置が更に例えば０．２ｍｍ程度下方に変位せしめられる。レーザ光線の送り速度は例えば５００ｍｍ／秒である。第七の溝部１６−７は第一の溝部１６−１及びこれに重畳せしめて形成された第四の溝部１６−４に重畳せしめて形成され、従って第四の溝部１６−４を拡張した形態となる。第七の溝部１６−７の底部も先細形態である。   In the embodiment shown in FIG. 4, a seventh groove forming process shown in FIG. 4-g is further performed. In the seventh groove portion forming step, the seventh groove portion 16-7 is formed by irradiating the laser beam along the first width direction predetermined portion A in the separation line 6. In this case, the focal position of the laser beam is further displaced downward by about 0.2 mm, for example, compared with the laser beams in the fourth to sixth groove forming steps. The feed rate of the laser beam is, for example, 500 mm / second. The seventh groove portion 16-7 is formed so as to overlap the first groove portion 16-1 and the fourth groove portion 16-4 formed so as to overlap with the first groove portion 16-1, and thus the fourth groove portion 16-4 is expanded. It becomes. The bottom of the seventh groove 16-7 is also tapered.

上述したとおりの第一乃至第七の溝部形成工程を遂行すると、図４−ｇに明確に図示する如く、第一の溝部１６―１及び第四の溝部１６−４を拡張した形態である第七の溝部１６−７、第二の溝部１６−２を拡張した形態である第五の溝部、及び第三の溝部１６−３を拡張した形態である第六の溝部１６−６が協働して溝１６を規定し、かかる溝１６は略平坦は底を有する。かような溝１６を形成した後に、ウエーハ２に所要外力を加えれば、ウエーハ２を充分確実に分離ライン６に沿って破断することができる。   When the first to seventh groove forming steps as described above are performed, the first groove portion 16-1 and the fourth groove portion 16-4 are expanded as clearly shown in FIG. The seventh groove portion 16-7, the fifth groove portion 16-2 which is an expanded form of the second groove portion 16-2, and the sixth groove portion 16-6 which is an expanded form of the third groove portion 16-3 cooperate. And defining a groove 16, which is substantially flat and has a bottom. If the required external force is applied to the wafer 2 after the groove 16 is formed, the wafer 2 can be sufficiently broken along the separation line 6.

而して、図４に図示する実施形態においては、最後に第七の溝部形成工程を遂行して最終的な溝１６を形成しているが、所望ならば第四の溝部形成工程おけるレーザ光線照射条件と第五の溝部形成工程及び第六の溝部形成工程におけるレーザ光線照射条件とを適宜に調節することによって、第七の溝部形成工程を省略して、略平坦な底を有する溝１６を形成することもできる。   Thus, in the embodiment shown in FIG. 4, the final groove 16 is finally formed by performing the seventh groove forming step. If desired, the laser beam in the fourth groove forming step is formed. By appropriately adjusting the irradiation conditions and the laser beam irradiation conditions in the fifth groove portion forming step and the sixth groove portion forming step, the seventh groove portion forming step is omitted, and the groove 16 having a substantially flat bottom is formed. It can also be formed.

本発明の溝形成方法が適用されるウエーハの典型例を示す斜面図。The slope view which shows the typical example of the wafer to which the groove | channel formation method of this invention is applied. 本発明の溝形成方法の好適実施形態を示す簡略部分断面図。The simplified fragmentary sectional view which shows suitable embodiment of the groove | channel formation method of this invention. 第一の溝部乃至第三の溝部を片側から他側に向けて順次に形成した場合に発生する問題を示す簡略断面図。FIG. 5 is a simplified cross-sectional view showing a problem that occurs when first to third groove portions are formed sequentially from one side to the other side. 本発明の溝形成方法の他の好適実施形態を示す簡略部分断面図。The simplified fragmentary sectional view which shows other suitable embodiment of the groove | channel formation method of this invention.

符号の説明Explanation of symbols

２：ウエーハ
６：分離ライン
１０：溝
１０−１乃至１０−３：第一乃至第三の溝部
１６：溝
１６−１乃至１６−７：第一乃至第七の溝部 2: Wafer 6: Separation line 10: Groove 10-1 to 10-3: First to third groove 16: Groove 16-1 to 16-7: First to seventh groove

Claims (4)

ウエーハの分離ラインに沿ってレーザ光線を照射して該分離ラインに沿って延びる溝を形成する溝形成方法において、
該分離ラインにおける第一の幅方向所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第一の溝部を形成する第一の溝部形成工程と、
該第一の溝部形成工程の後に、該分離ラインにおける、該第一の幅方向所定部位の片側に隣接する第二の幅方所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第二の溝部を形成する第二の溝部形成工程と、
該第二の溝部形成工程の後に、該分離ラインにおける、該第一の幅方向所定部位の他側に隣接する第三の幅方向所定部位に沿ってレーザ光線を照射して、該分離ラインに沿って延びる第三の溝部を形成する第三の溝部形成工程と、
を含み、底部が下方に向かって先細形態でない溝を形成する、ことを特徴とする溝形成方法。 In the groove forming method of forming a groove extending along the separation line by irradiating a laser beam along the wafer separation line,
A first groove forming step of forming a first groove extending along the separation line by irradiating a laser beam along the first width direction predetermined portion in the separation line;
After the first groove forming step, the separation line is irradiated with a laser beam along the second width predetermined portion adjacent to one side of the first width direction predetermined portion, along the separation line. A second groove part forming step of forming a second groove part extending by
After the second groove forming step, the separation line is irradiated with a laser beam along a third width direction predetermined portion adjacent to the other side of the first width direction predetermined portion in the separation line. A third groove forming step for forming a third groove extending along the line;
And forming a groove whose bottom portion is not tapered toward the bottom. 該第一の幅方向所定部位と該第二の幅方向所定部位との幅方向間隔と該第一の幅方向所定部位と該第三の幅方向所定部位との幅方向間隔とは実質上同一である、請求項１記載の溝形成方法。   The width direction interval between the first width direction predetermined portion and the second width direction predetermined portion and the width direction interval between the first width direction predetermined portion and the third width direction predetermined portion are substantially the same. The groove forming method according to claim 1, wherein 該第三の溝部形成工程の後に、該分離ラインにおける該第一の幅方向所定部位に沿ってレーザ光線を照射して、該第一の溝部に重畳して第四の溝部を形成する第四の溝部形成工程と、
該第四の溝部形成工程の後に、該分離ラインにおける該第二の幅方向所定部位に沿ってレーザ光線を照射して、該第二の溝部に重畳して第五の溝部を形成する第五の溝部形成工程と、
該第五の溝部形成工程の後に、該分離ラインにおける該第三の幅方向所定部位に沿ってレーザ光線を照射して、該第三の溝部に重畳して第六の溝部を形成する第六の溝部形成工程と、
を含む、請求項１又は２記載の溝形成方法。 After the third groove portion forming step, the fourth groove portion is formed by irradiating the laser beam along the first width direction predetermined portion of the separation line and forming a fourth groove portion overlapping the first groove portion. A groove forming step of
After the fourth groove portion forming step, the fifth groove portion is formed by irradiating a laser beam along the second width direction predetermined portion of the separation line and overlapping the second groove portion. A groove forming step of
After the fifth groove portion forming step, a sixth groove portion is formed by irradiating a laser beam along the third width direction predetermined portion in the separation line and overlapping the third groove portion. A groove forming step of
The groove | channel formation method of Claim 1 or 2 containing these. 該第六の溝部形成工程の後に、該分離ラインにおける該第一の幅方向所定部位に沿ってレーザ光線を照射して、該第一の溝部及び該第三の溝部に重畳して第七の溝部を形成する第七の溝部形成工程を含む、請求項３記載の溝形成方法。   After the sixth groove portion forming step, a laser beam is irradiated along the first width direction predetermined portion in the separation line, and the seventh groove portion is superimposed on the first groove portion and the third groove portion. The groove | channel formation method of Claim 3 including the 7th groove part formation process which forms a groove part.
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Cited By (6)

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Publication number Priority date Publication date Assignee Title
JP2011049431A (en) * 2009-08-28 2011-03-10 Disco Abrasive Syst Ltd Method of processing wafer
CN102528290A (en) * 2010-11-17 2012-07-04 株式会社迪思科 Method for processing optical device unit
JP2013524521A (en) * 2010-04-02 2013-06-17 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Improved method and apparatus for laser singulation of brittle materials
KR20180006847A (en) 2016-07-11 2018-01-19 가부시기가이샤 디스코 Laser processing apparatus
CN107695529A (en) * 2017-09-26 2018-02-16 大族激光科技产业集团股份有限公司 A kind of method and apparatus for making deep trouth on aluminium alloy using laser
JP2019175976A (en) * 2018-03-28 2019-10-10 パナソニックＩｐマネジメント株式会社 Element chip manufacturing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844739A (en) * 1981-09-10 1983-03-15 Toshiba Corp Scribing method for sapphire substrate
JPH1022237A (en) * 1996-07-03 1998-01-23 Mitsubishi Electric Corp Semiconductor device and laser scribing method
JPH10305420A (en) * 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
JP2002261314A (en) * 2001-03-05 2002-09-13 Kanegafuchi Chem Ind Co Ltd Method of manufacturing thin-film photoelectric conversion module
JP2004311915A (en) * 2003-04-07 2004-11-04 Samsung Electro Mech Co Ltd Method for cutting semiconductor wafer by using laser scribing process
JP2005064231A (en) * 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
JP2005072174A (en) * 2003-08-22 2005-03-17 Disco Abrasive Syst Ltd Separation method of workpiece formed by substrate and laminate stacked on its front surface

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844739A (en) * 1981-09-10 1983-03-15 Toshiba Corp Scribing method for sapphire substrate
JPH1022237A (en) * 1996-07-03 1998-01-23 Mitsubishi Electric Corp Semiconductor device and laser scribing method
JPH10305420A (en) * 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
JP2002261314A (en) * 2001-03-05 2002-09-13 Kanegafuchi Chem Ind Co Ltd Method of manufacturing thin-film photoelectric conversion module
JP2004311915A (en) * 2003-04-07 2004-11-04 Samsung Electro Mech Co Ltd Method for cutting semiconductor wafer by using laser scribing process
JP2005064231A (en) * 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
JP2005072174A (en) * 2003-08-22 2005-03-17 Disco Abrasive Syst Ltd Separation method of workpiece formed by substrate and laminate stacked on its front surface

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011049431A (en) * 2009-08-28 2011-03-10 Disco Abrasive Syst Ltd Method of processing wafer
JP2013524521A (en) * 2010-04-02 2013-06-17 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Improved method and apparatus for laser singulation of brittle materials
CN102528290A (en) * 2010-11-17 2012-07-04 株式会社迪思科 Method for processing optical device unit
KR20180006847A (en) 2016-07-11 2018-01-19 가부시기가이샤 디스코 Laser processing apparatus
CN107695529A (en) * 2017-09-26 2018-02-16 大族激光科技产业集团股份有限公司 A kind of method and apparatus for making deep trouth on aluminium alloy using laser
CN107695529B (en) * 2017-09-26 2019-06-04 大族激光科技产业集团股份有限公司 A kind of method and apparatus for making deep trouth on aluminium alloy using laser
JP2019175976A (en) * 2018-03-28 2019-10-10 パナソニックＩｐマネジメント株式会社 Element chip manufacturing method
JP7142236B2 (en) 2018-03-28 2022-09-27 パナソニックＩｐマネジメント株式会社 Element chip manufacturing method
US11551974B2 (en) 2018-03-28 2023-01-10 Panasonic Intellectual Property Management Co., Ltd. Manufacturing process of element chip using laser grooving and plasma-etching

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