JP2006269504A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce time and expenses required for correction for changing the value of resistance in a resistor device formed by a semiconductor formation process. <P>SOLUTION: N contacts 23-1 to 23-N are dispersed and formed at equal intervals over the entire length along the longitudinal direction on a resistor 22, and alumina wiring patterns 24, 25 are connected to two contacts 23-1 to 23-N selected from N contacts 23-1 to 23-N. When changing the value of resistance, only the alumina wiring pattern is changed, and connection is made to another contact corresponding to a target value of resistance for formation. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device provided with a resistor formed by a semiconductor process.

  A semiconductor device provided with an integrated circuit has a resistor device formed by a semiconductor process. FIG. 5A shows a portion of the resistor device 1 in the conventional semiconductor device. As shown in FIG. 1A, the resistor device 1 has two contacts 3 and 4 formed at predetermined positions of a long and narrow resistor 2 having a width W1, and an aluminum wiring pattern 5 is connected to the contact 3 In this configuration, the aluminum wiring pattern 6 is connected to the contact 4, and a predetermined resistance value is provided between the aluminum wiring pattern 5 and the aluminum wiring pattern 6. This resistor device 1 includes a resistor forming step 10 for forming a resistor 2 and a contact forming step for forming two contacts 3 and 4 at predetermined positions of the resistor 2 as shown in FIG. 11 and an aluminum wiring pattern forming step 12 for forming aluminum wiring patterns 5 and 6.

  For example, it may be necessary to change the resistance value between the aluminum wiring pattern 5 and the aluminum wiring pattern 6 in accordance with a change in the design of the integrated circuit.

FIG. 5C shows the resistor device 1A when the resistance value is changed. The resistor device 1 </ b> A has a contact 4 </ b> A instead of the first contact 4 formed first, and an aluminum wiring pattern 6 </ b> A instead of the aluminum wiring pattern 6. This resistor device 1A includes a resistor forming step 10 for forming the resistor 2 and a contact forming step for forming two contacts 3 and 4A at predetermined positions of the resistor 2, as shown in FIG. 11A and an aluminum wiring pattern forming step 12A for forming the aluminum wiring patterns 5 and 6A.
JP 2000-340752 A

  In the conventional semiconductor device, when the resistance value is changed, a contact forming mask and an aluminum wiring pattern forming mask are newly manufactured, and two processes of a contact forming process 11A and an aluminum wiring pattern forming process 12A are performed. Therefore, it is necessary to replace the mask with a new mask different from the mask used so far, and the time required for correcting the semiconductor device becomes long.

  Therefore, an object of the present invention is to provide a semiconductor device that solves the above-described problems.

The present invention comprises a resistor and a plurality of contacts distributed on the resistor along the longitudinal direction thereof,
And a wiring pattern connected to a contact selected from the plurality of contacts.

  According to the present invention, the resistance value can be changed to a target value only by correcting the mask of the wiring pattern forming step without changing the step of forming the resistor and the step of forming the plurality of contacts. Is possible. Therefore, it is possible to reduce the time and cost required for correcting the semiconductor device for changing the resistance value.

  Next, an embodiment of the present invention will be described.

  1A and 2A show a portion of the resistor device 20 in the semiconductor device according to the first embodiment of the present invention. FIG. 4B is a manufacturing process diagram, and FIG. 4D is an equivalent circuit of the resistor device 20. 2A shows a cross section taken along line IIA-IIA in FIG. 1A, and FIG. 2B shows a cross section taken along line IIB-IIB in FIG. The semiconductor device has an integrated circuit (not shown), and a resistor device 20 is formed in a part thereof.

  As shown in FIGS. 1A and 2A, the resistor device 20 has an elongated resistor 22 made of a p-type diffusion layer on an n-type silicon substrate 21. N contacts 23-1 to 23-N are formed at equal intervals along the longitudinal direction, and an aluminum wiring pattern 24 is connected to the contacts 23-1. Another aluminum wiring pattern 25 is connected to 23-N, and a predetermined resistance value R1 is provided between the aluminum wiring pattern 24 and the aluminum wiring pattern 25. Reference numeral 26 denotes an insulating film. The resistor 22, the contacts 23-1 to 23-N, the aluminum wiring patterns 24 and 25, and the insulating film 26 are all formed by a semiconductor formation process for forming an integrated circuit. When this resistor device 20 is shown by an equivalent circuit, it becomes as shown in FIG.

  The aluminum wiring patterns 24 and 25 are connected to two contacts 23-1 and 23 -N selected from the N contacts 23-1 to 23 -N. The remaining contacts 23-2 to 23- (N-1) are not used and are vacant, and are used when the resistance value is reduced.

  As shown in FIG. 1B, the resistor device 20 includes a resistor forming step 30 for forming the resistor 22 and a contact forming step 31 for forming contacts 23-1 to 23-N on the resistor 22. And a wiring pattern forming step 32 for forming the aluminum wiring patterns 24 and 25.

Here, the length L1 between the contacts 23-1 and 23-N at both ends of the resistor 22 is, for example, 120 μm, the width W1 is, for example, 3 μm, the size of the contact 23 is 2.0 μm ² , and N is 28 The pitch p1 of the contacts 23 is 4.2 μm. Under the above conditions, the resistance value changes by 3.5% by changing one contact from which the aluminum wiring pattern is drawn out from the contact 23-N to the adjacent contact 23- (N-1).

  A case will be described in which the resistance value R1 is changed to, for example, 3.5% lower than the resistance value R1 with a change in the design of the integrated circuit.

  FIG. 1C and FIG. 2B show a resistor device 20A in which the resistance value is changed to R2. In the resistor device 20A, instead of the aluminum wiring pattern 25, the aluminum wiring pattern 25A is connected to the contact 23- (N-1) adjacent to the contact 23-N that has been connected so far. A target resistance value R2 is provided between the aluminum wiring pattern 24 and the aluminum wiring pattern 25A.

  When the resistance value is changed in this way, as shown in FIG. 1B, the resistor forming step 30 and the contact forming step 31 are performed in the same manner as before, and a new mask for forming an aluminum wiring pattern is newly provided. The aluminum wiring pattern forming step 32A may be performed by exchanging the aluminum wiring pattern forming mask with the conventional aluminum wiring pattern forming mask. That is, the semiconductor device is corrected only by the aluminum wiring pattern forming step 32A, which is the last step, and the time required for correcting the semiconductor device can be shorter than the conventional method.

  It should be noted that, according to the target resistance value, two contacts are selected from the N contacts 23-1 to 23-N, and an aluminum wiring pattern is drawn from the selected two contacts, thereby achieving the target resistance. A value can be obtained.

  FIG. 3 shows a portion of the resistor device 40 in the semiconductor device according to the first embodiment of the present invention. The resistor device 40 includes a resistor 22 in which N contacts 23-1 to 23-N are dispersed at equal intervals, and N contacts 23-1A to 23-NA are dispersed at equal intervals. The resistor 22A is formed in parallel with the X1-X2 direction at a sufficient distance A so that the resistor 22A does not interfere with each other, and the resistor 22 and the resistor 22A are connected in series to have a predetermined resistance value. It is the composition which becomes.

  An aluminum wiring pattern 24 is formed to connect to the X2 end contact 23-1 on the resistor 22, and an aluminum wiring pattern 41 is formed to connect to the X1 end contact 23-1A on the resistor 22A. In addition, an aluminum wiring pattern 42 is formed between the X1-end contact 23-1 on the resistor 22 and the X1-end contact 23- (N-2) A on the resistor 22A. Therefore, between the aluminum wiring pattern 24 and the aluminum wiring pattern 41, the entire resistor 22 and a part of the resistor 22A are connected in series, and between the aluminum wiring pattern 24 and the aluminum wiring pattern 40. The resistance value is a resistance value obtained by adding the resistance value of the length 22 of the resistor 22 and the resistance value of the length L2 of the resistor 22A.

  The resistor device 40 can obtain a larger resistance value than the resistor device 20 shown in FIG.

  For example, the resistance value between the aluminum wiring pattern 24 and the aluminum wiring pattern 41 can be changed by changing the aluminum wiring pattern 42 and connecting it to another contact on the resistor 22A.

  Further, when the potential of the contact 23- (N-2) A and the potential of the contact 23-3A are the same, the aluminum wiring pattern 50 and the aluminum are utilized by utilizing the X2 side portion of the resistor 22A. Another resistance value can be obtained with the wiring pattern 51.

  Further, it is possible to adopt a configuration in which three or more resistors are arranged in parallel and three or more resistors are electrically connected in series.

  FIG. 4A shows a portion of the resistor device 20B in the semiconductor device according to the third embodiment of the present invention. FIG. 5B is an equivalent circuit of the resistor device 20B. The resistor device 20B has an elongated resistor 22B having a width W2 that is approximately twice as wide as that of the resistor 22, and is formed on the resistor 22B over the entire length along the longitudinal direction thereof. N contacts 23-1 to 23-N in the first row 51 and contacts 23-1B to 23- (N-1) B in the second row 52 are formed in two rows in a staggered arrangement. It is. The pitch p2 in the column direction between the first row contact and the second row contact is 1/2 of the pitch p1 in FIG. Further, the aluminum wiring pattern 24 is connected to the first row of contacts 23-1, and the aluminum wiring pattern 25 is also formed to be connected to the first row of contacts 23 -N. Between 25 is a predetermined resistance value.

  By forming the aluminum wiring pattern 25 connected to the second row of contacts 23- (N-1) B as indicated by reference numeral 25B, the resistance value becomes smaller than that in the case of FIG. Changed. That is, the resistance value can be finely changed.

  In each embodiment, the resistors 22, 22A and 22B may be polysilicon resistors.

It is a figure which shows the resistor apparatus of the semiconductor device which becomes Example 1 of this invention. It is sectional drawing of the resistor apparatus of FIG. It is a figure which shows the resistor apparatus of the semiconductor device which becomes Example 2 of this invention. It is a figure which shows the resistor apparatus of the semiconductor device which becomes Example 3 of this invention. It is a figure which shows the resistor device of the conventional semiconductor device.

Explanation of symbols

20, 20A, 20B, 40 Resistor device 22, 22A, 22B Resistor 23-1 to 23-N, 23-1A to 23-NA, 23-1B to 23- (N-2) Contact 24, 25.25A 25B, 40, 41 Aluminum wiring pattern

Claims (4)

A resistor, and a plurality of contacts distributed on the resistor along the longitudinal direction thereof;
A semiconductor device comprising: a wiring pattern connected to a contact selected from among the plurality of contacts. The semiconductor device according to claim 1,
The semiconductor device according to claim 1, wherein the plurality of contacts are formed over the entire length of the resistor. The semiconductor device according to claim 1 or 2,
Two or more of the resistors are arranged side by side,
A semiconductor device characterized in that one contact of one resistor and one contact of another resistor are connected by a wiring pattern. The semiconductor device according to claim 1 or 2,
2. The semiconductor device according to claim 1, wherein the plurality of contacts are arranged in a staggered manner along the longitudinal direction of the resistor.

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