JP2006237123A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit Download PDF

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Publication number
JP2006237123A
JP2006237123A JP2005046832A JP2005046832A JP2006237123A JP 2006237123 A JP2006237123 A JP 2006237123A JP 2005046832 A JP2005046832 A JP 2005046832A JP 2005046832 A JP2005046832 A JP 2005046832A JP 2006237123 A JP2006237123 A JP 2006237123A
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wiring
semiconductor integrated
circuit
integrated circuit
correction
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Akinobu Kadota
晃宜 門田
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Sharp Corp
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Sharp Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To reduce substantially a cost in the time of a circuit correction by making a connection wiring so that existing wiring layout is not changed as much as possible and that the mask correction number of layers may be reduced as much as possible in the time of the circuit correction. <P>SOLUTION: In consideration of the circuit correction after the mask formation, as shown in an arrangement view in Fig. 6, in the same way as a conventional technology, a spare cell 101 is beforehand located to a place which does not have a function cell 102. The necessary input pin of the spare cell 101 for the circuit correction is connected to the power supply/ground wiring 202 of the upper layer in a chip, and the wiring 203 shown in Fig. 1 wired by the necessary output pin is connected to the lowest wiring layer through the top wiring layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体集積回路にかかわり、特にマスク製造後の回路修正を容易に行えるレイアウト設計手法を応用した半導体集積回路に関するものである。   The present invention relates to a semiconductor integrated circuit, and more particularly to a semiconductor integrated circuit to which a layout design technique that can easily correct a circuit after manufacturing a mask is applied.

特定用途向けLSIを開発する上で、設計方法としては、主にゲートアレイ(Gate
Array)方式とスタンダードセル(Standard Cell)方式の二つに分類される。上記したスタンダードセル方式は、個別のチップごとに全層のマスク製造を行う必要があり、マスク作成後に回路修正を行う場合、その都度セルの配置/配線を変更しなければならず、再度全層のマスク製造を行う必要があり開発期間/コストが増大する問題があった。
In developing LSIs for specific applications, the design method is mainly gate array (Gate
There are two types: an array method and a standard cell method. In the standard cell method described above, it is necessary to manufacture masks for all layers for each individual chip. When circuit correction is performed after mask creation, cell placement / wiring must be changed each time, and all layers are again formed. However, there is a problem that the development period / cost increases.

特許文献1(「特開平11−126823号公報」)に、上記の問題を解決する半導体集積回路及びその製造方法が開示されている。   Patent Document 1 ("Japanese Patent Laid-Open No. 11-126823") discloses a semiconductor integrated circuit that solves the above problems and a method for manufacturing the same.

上記特許文献1では、図6に示すように、スタンダードセル方式の半導体集積回路において、予め未配線のスペアセル101をチップ301内に配置することで、アルミ配線のマスクを変更するだけで、容易に回路変更が可能になり、ゲートアレイ方式のように回路修正が容易に行えるようになることが記載されている。
特開平11−126823号公報
In the above-mentioned Patent Document 1, as shown in FIG. 6, in a standard cell type semiconductor integrated circuit, an unwired spare cell 101 is arranged in advance in a chip 301, so that it is easy to change an aluminum wiring mask. It is described that the circuit can be changed and the circuit can be easily corrected as in the gate array system.
JP-A-11-126823

しかしながら、上記の従来技術を用いた回路修正では、以下のような問題点を有する。   However, the circuit correction using the above-described conventional technique has the following problems.

マスク作成後の回路修正では、予め挿入した、未配線のスペアセル101の接続情報を変更し、既存の配線情報を極力保ったまま、変更箇所のみの接続を行う、ECO(Engineering Change Order)という技術を用いて配線工程を行うが、通常のECO配線工程では、修正箇所を最短距離で接続するため、多層にまたがった配線を行ってしまい、全配線層もしくは、複数層のマスク修正を行う必要があり、回路修正の際のマスク製造コストが増大してしまう。   In circuit correction after mask creation, a technology called ECO (Engineering Change Order) is used, in which connection information of spare cells 101 that have been inserted in advance is changed, and only the changed portions are connected while keeping existing wiring information as much as possible. However, in the normal ECO wiring process, the correction points are connected at the shortest distance, so that wiring is performed across multiple layers, and it is necessary to correct the mask of all wiring layers or multiple layers. Yes, the mask manufacturing cost for circuit correction increases.

そこで、本発明は、上記した課題の解決を図るべく、創作したものであり、回路修正で既存の配線形状を出来るだけ変更しないよう配線の接続を行い、回路修正時のマスク修正層数を極力減らし、回路修正の際のコストを大幅に削減する半導体集積回路を提供することを目的とする。   Therefore, the present invention was created in order to solve the above-described problems. The wiring is connected so as not to change the existing wiring shape as much as possible by circuit correction, and the number of mask correction layers at the time of circuit correction is minimized. An object of the present invention is to provide a semiconductor integrated circuit that can reduce the cost for circuit correction significantly.

本発明は、上記した目的を達成するため、以下に記載する技術構成を採用するものである。   In order to achieve the above-described object, the present invention employs the technical configuration described below.

本発明に係る半導体集積回路は、スタンダードセル方式の半導体集積回路において、回路修正用スペアセルの所要な入力ピンの電位を安定させるために、チップ中の上位階層に配線されている電源/グランド配線に接続させたことを特徴とする。   In a semiconductor integrated circuit according to the present invention, in a standard cell type semiconductor integrated circuit, in order to stabilize the potential of a required input pin of a spare cell for circuit correction, power supply / ground wiring is wired to an upper layer in the chip. It is characterized by being connected.

また、本発明に係る半導体集積回路は、上記構成に加え、所要の出力ピンに最上位配線層を通り最下位配線層まで配線された配線を接続したことを特徴とする。   Further, the semiconductor integrated circuit according to the present invention is characterized in that, in addition to the above-described configuration, a wiring routed from the highest wiring layer to the lowest wiring layer is connected to a required output pin.

また、本発明に係る半導体集積回路は、上記構成において、各配線層を階段状に配線することを特徴とする。   A semiconductor integrated circuit according to the present invention is characterized in that, in the above configuration, each wiring layer is wired stepwise.

さらに、本発明に係る半導体集積回路は、上記構成において、半導体集積回路の回路変更を行うレイアウト手法を用いる場合に、配線層のみを用いて、回路修正を行うことを特徴とする。   Furthermore, the semiconductor integrated circuit according to the present invention is characterized in that, in the above configuration, when a layout technique for changing the circuit of the semiconductor integrated circuit is used, the circuit is corrected by using only the wiring layer.

本発明に係る半導体集積回路によれば、スペアセルの入出力ピンを予め各配線層に対して配線しておくことにより、回路修正する場合、再利用でき、1つの配線層と1つのコンタクト層の2層のマスク製造コストで実現でき、コストを大幅に削減することが可能となる。   According to the semiconductor integrated circuit of the present invention, the input / output pins of the spare cell are wired in advance to each wiring layer, so that it can be reused when the circuit is modified, and one wiring layer and one contact layer can be reused. This can be realized with a two-layer mask manufacturing cost, and the cost can be greatly reduced.

また、上記の配線構造を階段状に配線することで、配線1層のみのマスク製造コストで実現でき、回路修正のコストを極限まで削減することが可能となる。   Further, by wiring the above wiring structure stepwise, it can be realized at a mask manufacturing cost of only one wiring layer, and the cost of circuit correction can be reduced to the limit.

以下、本発明の実施形態について添付図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the accompanying drawings.

図1〜図5は発明を実施する形態の一例であって、図中、図と同一の符号を付した部分は同一物を表わし、基本的な構成は図に示す従来のものと同様である。
(第1の実施形態の説明)
1 to 5 show examples of embodiments of the present invention. In the drawings, the same reference numerals as those in the drawings denote the same components, and the basic configuration is the same as the conventional one shown in the drawings. .
(Description of First Embodiment)

以下、本発明に係る半導体集積回路の回路変更を行うレイアウトを用いた半導体集積回路の第1の実施形態について図面を参考にしながら説明する。   Hereinafter, a first embodiment of a semiconductor integrated circuit using a layout for changing the circuit of a semiconductor integrated circuit according to the present invention will be described with reference to the drawings.

図1は、第1の実施形態に係る半導体集積回路の配線模式図である。   FIG. 1 is a schematic wiring diagram of the semiconductor integrated circuit according to the first embodiment.

従来の技術と同様に、マスク製造後の回路修正を考慮するため、図6に示す配置図のように、予めスペアセル101をファンクションセル102のない場所に配置するとともに、回路修正用スペアセル101の所要な入力ピンを図7に示す電源/グランド配線図のようにMesh配線を行った電源/グランド配線202に接続させたことを特徴とする半導体集積回路である。   As in the conventional technique, in order to consider circuit correction after mask manufacturing, as shown in the layout diagram of FIG. 6, the spare cell 101 is arranged in advance in a place without the function cell 102 and the circuit correction spare cell 101 is required. This is a semiconductor integrated circuit characterized in that various input pins are connected to a power / ground wiring 202 having a mesh wiring as shown in the power / ground wiring diagram shown in FIG.

このように、本実施形態では、図1の半導体集積回路の配線模式図で示すように、回路修正用スペアセル101の所要な入力ピンをチップ中の上位階層の電源/グランド配線202に接続させたことによって、電位を安定させ、電源降下を防ぐこともできる。
(第2の実施形態の説明)
Thus, in this embodiment, as shown in the schematic wiring diagram of the semiconductor integrated circuit of FIG. 1, the required input pins of the circuit correction spare cell 101 are connected to the power / ground wiring 202 in the upper layer in the chip. As a result, it is possible to stabilize the potential and prevent a power supply drop.
(Description of Second Embodiment)

以下、本発明に係る半導体集積回路の回路変更を行うレイアウトを用いた半導体集積回路の第2の実施形態について図面を参考にしながら説明する。   Hereinafter, a second embodiment of a semiconductor integrated circuit using a layout for changing the circuit of the semiconductor integrated circuit according to the present invention will be described with reference to the drawings.

第1の実施形態と同様なスペアセルにおいて、所要の出力ピンに最上位配線層を通り最下位配線層まで配線された図1に示す配線203を接続したことを特徴とする半導体集積回路である。   In a spare cell similar to that of the first embodiment, the wiring 203 shown in FIG. 1 wired to the lowest wiring layer through the uppermost wiring layer is connected to a required output pin.

ここで、例えば、図8の配線模式図で示すように、ファンクションセル103,104が配線204で接続されているような場合において、マスク製造後に回路修正が必要となり、ファンクションセル103とファンクションセル104との接続の間にスペアセル101を接続する回路修正が発生した場合、従来技術の未配線のスペアセル101では、配線距離が最短となるよう、図9の配線模式図のように配線205を削除し、配線206,207を追加するECO配線が行われ、全配線層もしくは、最善の方法でも複数層の配線層の修正が必要となりマスク製造コストが増大してしまう。   Here, for example, as shown in the schematic wiring diagram of FIG. 8, when the function cells 103 and 104 are connected by the wiring 204, circuit correction is necessary after the mask is manufactured, and the function cell 103 and the function cell 104. 9 is deleted, the wiring 205 is deleted as shown in the schematic wiring diagram of FIG. 9 so that the wiring distance of the spare cell 101 of the prior art that has not been wired is minimized. Then, ECO wiring for adding the wirings 206 and 207 is performed, and it is necessary to modify all wiring layers or a plurality of wiring layers even by the best method, and the mask manufacturing cost increases.

一方、本実施形態では、図3の配線模式図のようにECO配線が行われる。第1の実施形態の技術を用いたスペアセルであれば、配線208を追加し、コンタクト401,402を削除すれば、ファンクションセル103とスペアセル101の接続を変更することができる。   On the other hand, in this embodiment, ECO wiring is performed as shown in the wiring schematic diagram of FIG. If the spare cell uses the technique of the first embodiment, the connection between the function cell 103 and the spare cell 101 can be changed by adding the wiring 208 and deleting the contacts 401 and 402.

また、第2の実施形態の技術を用いたスペアセルであれば、配線209を追加し、コンタクト403を削除すれば、ファンクションセル104とスペアセル101の接続を変更できる。上記の修正は、配線層2とコンタクト1層の2層のマスク製造で回路修正が行われ、回路修正するコストを最小限に抑えることが可能となる。
(第3の実施形態の説明)
If the spare cell uses the technique of the second embodiment, the connection between the function cell 104 and the spare cell 101 can be changed by adding the wiring 209 and deleting the contact 403. In the above correction, the circuit correction is performed by manufacturing the two-layer mask of the wiring layer 2 and the contact 1 layer, and the cost for correcting the circuit can be minimized.
(Description of the third embodiment)

以下、本発明に係る半導体集積回路の回路変更を行うレイアウトを用いた半導体集積回路の第3の実施形態について図面を参考にしながら説明する。   Hereinafter, a third embodiment of a semiconductor integrated circuit using a layout for changing the circuit of the semiconductor integrated circuit according to the present invention will be described with reference to the drawings.

図2は、第3の実施形態に係る半導体集積回路の配線模式図である。   FIG. 2 is a schematic wiring diagram of the semiconductor integrated circuit according to the third embodiment.

本発明の第1,2の実施形態と同様なスペアセルにおいて、配線工程で各配線層を図2のように階段状に配線することを特徴とする半導体集積回路である。   In a spare cell similar to the first and second embodiments of the present invention, a semiconductor integrated circuit is characterized in that each wiring layer is wired stepwise as shown in FIG. 2 in a wiring process.

本実施形態では、図4に示すように各配線階層を階段状に配線することにより、配線210を削除し、配線211を追加することで、一階層の配線層を変更することで、接続情報を変更できる。同様に、配線212も、配線層2のみの変更で、上記の回路修正を極限の一階層のみのマスク製造コストで実現できる。
(第4の実施形態の説明)
In the present embodiment, as shown in FIG. 4, each wiring layer is wired stepwise, the wiring 210 is deleted, and the wiring 211 is added to change the wiring layer of one layer, thereby connecting information. Can be changed. Similarly, the wiring 212 can be realized by changing only the wiring layer 2 and the above circuit correction can be realized at a mask manufacturing cost of only one layer.
(Explanation of Fourth Embodiment)

以下、本発明に係る半導体集積回路の回路変更を行うレイアウトを用いた半導体集積回路の第4の実施形態について説明する。   Hereinafter, a fourth embodiment of a semiconductor integrated circuit using a layout for changing the circuit of the semiconductor integrated circuit according to the present invention will be described.

上記回路修正用スペアセルに接続された配線201、203のみ用いて回路修正を行うことを特徴とする半導体集積回路である。   In the semiconductor integrated circuit, the circuit correction is performed using only the wirings 201 and 203 connected to the circuit correction spare cell.

アンテナ違反の問題が発生した場合、アンテナダイオードセル、もしくは、上位階層へ接続を変更して、アンテナ違反を回避する。上記のアンテナ回避手法では、少なくとも複数層のマスク製造が必要となる。ここで、図5の配線204でアンテナ違反が発生した場合、第3の実施形態の技術を用いると、図3のように、コンタクト404,405を削除し、配線203を配線204に配線214のように接続し、配線213を削除することで、最上位階層への接続が配線層4とコンタクト1層の2層のマスク製造変更で実現する。さらに、第3の実施形態の技術を用いれば、配線層4のマスク製造費だけで実現する。   If an antenna violation problem occurs, change the connection to the antenna diode cell or higher layer to avoid the antenna violation. In the antenna avoidance method described above, at least a plurality of layers of masks must be manufactured. Here, when an antenna violation occurs in the wiring 204 in FIG. 5, if the technique of the third embodiment is used, the contacts 404 and 405 are deleted and the wiring 203 is connected to the wiring 204 as shown in FIG. 3. By connecting in this manner and deleting the wiring 213, the connection to the highest layer is realized by changing the mask manufacturing of the two layers of the wiring layer 4 and the contact 1 layer. Furthermore, if the technique of the third embodiment is used, it can be realized only by the mask manufacturing cost of the wiring layer 4.

尚、本発明は、上記した実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々変更を加え得ることは勿論である。   It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made without departing from the gist of the present invention.

本発明における半導体集積回路の配線模式図である。It is a wiring schematic diagram of a semiconductor integrated circuit in the present invention. 本発明の第3の実施形態における半導体集積回路の配線模式図である。It is a wiring schematic diagram of the semiconductor integrated circuit in the 3rd Embodiment of this invention. 本発明の第2の実施形態におけるECO配線後の配線模式図である。It is the wiring schematic diagram after ECO wiring in the 2nd Embodiment of this invention. 本発明の第3の実施形態におけるECO配線後の配線模式図である。It is the wiring schematic diagram after ECO wiring in the 3rd Embodiment of this invention. 本発明の第4の実施形態におけるECO配線後の配線模式図である。It is the wiring schematic diagram after ECO wiring in the 4th Embodiment of this invention. 従来の技術で使用するスペアセルの配置図である。It is a layout view of spare cells used in the conventional technology. 電源/グランド配線図である。It is a power supply / ground wiring diagram. 回路修正前の配線模式図である。It is a wiring schematic diagram before circuit correction. 従来の技術における、ECO配線後の配線模式図である。It is the wiring schematic diagram after ECO wiring in the prior art.

符号の説明Explanation of symbols

101 スペアセル
102、 103、 104 ファンクションセル
201 スペアセルの所要の入力ピンに接続された配線
202 電源/グランド配線
203 スペアセルの所要の出力ピンに接続された配線
204 既存の配線
205 従来の技術において、削除された配線
206, 207 従来の技術において、追加された配線
208, 209, 211, 212 本発明において、追加された配線
210 本発明のおいて、削除された配線
301 半導体集積回路
401, 402, 403, 404, 405 本発明において、削除されたコンタクト
101 Spare cell 102, 103, 104 Function cell 201 Wiring connected to required input pin of spare cell 202 Power supply / ground wiring 203 Wiring connected to required output pin of spare cell 204 Existing wiring 205 Deleted in conventional technology Wirings 206, 207 In the prior art, added wirings 208, 209, 211, 212 In the present invention, added wiring 210 In the present invention, deleted wiring 301 Semiconductor integrated circuits 401, 402, 403, 404, 405 In the present invention, deleted contacts

Claims (4)

スタンダードセル方式の半導体集積回路において、
回路修正用スペアセルの所要な入力ピンの電位を安定させるために、チップ中の上位階層に配線されている電源/グランド配線に接続させたことを特徴とする半導体集積回路。
In standard cell semiconductor integrated circuits,
A semiconductor integrated circuit characterized by being connected to a power supply / ground wiring that is wired in an upper layer in a chip in order to stabilize a potential of a required input pin of a circuit correction spare cell.
前記回路修正用スペアセルにおいて、所要の出力ピンに最上位配線層を通り最下位配線層まで配線された配線を接続したことを特徴とする請求項1に記載の半導体集積回路。   2. The semiconductor integrated circuit according to claim 1, wherein in the circuit correction spare cell, a wiring that passes through the highest wiring layer and reaches the lowest wiring layer is connected to a required output pin. 前記回路修正用スペアセルの配線工程において、各配線層を階段状に配線することを特徴とする請求項1または請求項2に記載の半導体集積回路。   3. The semiconductor integrated circuit according to claim 1, wherein each wiring layer is wired stepwise in the wiring step of the circuit correcting spare cell. 半導体集積回路の回路変更を行うレイアウト手法を用いる場合において、前記回路修正用スペアセルに接続された配線のみを用いて、回路修正を行うことを特徴とする請求項1から請求項3のいずれか1項に記載の半導体集積回路。   4. The circuit correction according to claim 1, wherein, when a layout technique for changing a circuit of a semiconductor integrated circuit is used, the circuit correction is performed using only the wiring connected to the circuit correction spare cell. The semiconductor integrated circuit according to Item.
JP2005046832A 2005-02-23 2005-02-23 Semiconductor integrated circuit Pending JP2006237123A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147331A (en) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit and method of modifying semiconductor integrated circuit
JP2008227035A (en) * 2007-03-12 2008-09-25 Nec Electronics Corp Cell data for spare cell, design method of semiconductor integrated circuit, and semiconductor integrated circuit
US8013627B2 (en) 2008-12-31 2011-09-06 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147331A (en) * 2006-12-08 2008-06-26 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit and method of modifying semiconductor integrated circuit
JP2008227035A (en) * 2007-03-12 2008-09-25 Nec Electronics Corp Cell data for spare cell, design method of semiconductor integrated circuit, and semiconductor integrated circuit
US8013627B2 (en) 2008-12-31 2011-09-06 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

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