JP2006237479A5 - - Google Patents

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Publication number
JP2006237479A5
JP2006237479A5 JP2005053180A JP2005053180A JP2006237479A5 JP 2006237479 A5 JP2006237479 A5 JP 2006237479A5 JP 2005053180 A JP2005053180 A JP 2005053180A JP 2005053180 A JP2005053180 A JP 2005053180A JP 2006237479 A5 JP2006237479 A5 JP 2006237479A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005053180A
Other languages
Japanese (ja)
Other versions
JP2006237479A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005053180A priority Critical patent/JP2006237479A/ja
Priority claimed from JP2005053180A external-priority patent/JP2006237479A/ja
Priority to CNB2006800006571A priority patent/CN100442456C/zh
Priority to PCT/JP2006/303152 priority patent/WO2006092997A1/ja
Priority to KR1020077003580A priority patent/KR100861826B1/ko
Priority to US11/660,862 priority patent/US20080115728A1/en
Priority to TW095106127A priority patent/TW200644047A/zh
Publication of JP2006237479A publication Critical patent/JP2006237479A/ja
Publication of JP2006237479A5 publication Critical patent/JP2006237479A5/ja
Pending legal-status Critical Current

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JP2005053180A 2005-02-28 2005-02-28 プラズマ処理装置 Pending JP2006237479A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005053180A JP2006237479A (ja) 2005-02-28 2005-02-28 プラズマ処理装置
CNB2006800006571A CN100442456C (zh) 2005-02-28 2006-02-22 等离子体处理装置
PCT/JP2006/303152 WO2006092997A1 (ja) 2005-02-28 2006-02-22 プラズマ処理装置
KR1020077003580A KR100861826B1 (ko) 2005-02-28 2006-02-22 플라즈마 처리 장치
US11/660,862 US20080115728A1 (en) 2005-02-28 2006-02-22 Plasma Processing Apparatus
TW095106127A TW200644047A (en) 2005-02-28 2006-02-23 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005053180A JP2006237479A (ja) 2005-02-28 2005-02-28 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2006237479A JP2006237479A (ja) 2006-09-07
JP2006237479A5 true JP2006237479A5 (enExample) 2008-04-03

Family

ID=36941031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005053180A Pending JP2006237479A (ja) 2005-02-28 2005-02-28 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20080115728A1 (enExample)
JP (1) JP2006237479A (enExample)
KR (1) KR100861826B1 (enExample)
CN (1) CN100442456C (enExample)
TW (1) TW200644047A (enExample)
WO (1) WO2006092997A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI341872B (en) * 2006-08-07 2011-05-11 Ind Tech Res Inst Plasma deposition apparatus and depositing method thereof
JP2008147526A (ja) * 2006-12-12 2008-06-26 Phyzchemix Corp 基板周縁部の不要物除去方法及び装置、並びに半導体製造装置
US8956500B2 (en) * 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
JP5649153B2 (ja) * 2008-07-11 2015-01-07 住友重機械工業株式会社 プラズマ処理装置およびプラズマ処理方法
TWI498053B (zh) 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
JP5449239B2 (ja) * 2010-05-12 2014-03-19 東京エレクトロン株式会社 基板処理装置、基板処理方法及びプログラムを記録した記憶媒体
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
US9941100B2 (en) * 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
US20140007811A1 (en) * 2012-07-09 2014-01-09 Shenzhen China Star Optoelectronics Technology Co. Ltd. Repairing device for repairing disconnected line
JP6096547B2 (ja) * 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
KR101962915B1 (ko) * 2014-02-20 2019-03-27 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
JP6297509B2 (ja) * 2015-01-26 2018-03-20 東京エレクトロン株式会社 基板処理装置
WO2018187494A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Gas phase particle reduction in pecvd chamber
CN111132449B (zh) * 2020-01-02 2025-03-25 成都理工大学 一种球栅阵列封装pcb基板及其阻抗匹配方法
CN113445015A (zh) * 2020-03-26 2021-09-28 中国科学院微电子研究所 一种集成镀膜设备的样品传输装置
KR102820371B1 (ko) * 2022-10-17 2025-06-13 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6270617B1 (en) * 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JPH0997786A (ja) * 1995-09-29 1997-04-08 Kobe Steel Ltd プラズマ処理方法及びその装置
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JP3348768B2 (ja) * 1997-08-22 2002-11-20 日本電気株式会社 アルミ及びアルミ合金膜のドライエッチング装置、ドライエッチング方法、半導体装置の製造装置、半導体装置の製造方法及び半導体装置
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
JP2004140219A (ja) * 2002-10-18 2004-05-13 Nec Kyushu Ltd 半導体装置の製造方法
KR100988085B1 (ko) * 2003-06-24 2010-10-18 삼성전자주식회사 고밀도 플라즈마 처리 장치

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