JP2006233247A - Thin film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a production apparatus for producing a long-length oxide superconductive wire rod of high quality by preventing deterioration in superconductive properties at the time of forming a film. <P>SOLUTION: The thin film forming apparatus is provided with: a treatment vessel storing long-length base materials 3; at least a pair of winding member groups 5 obtained by coaxially arranging winding members for winding the long-length base materials; a target holder provided adjacently to the long-length base materials wound around these winding member groups; and a laser light emitting means of emitting laser light to a target 9 held by the target holder, and constituted so that vapor deposition particles produced by emitting laser light to the surface of the target are deposited on the surfaces of the long-length base materials wound around the winding member group and arranged in parallel in a state where a plurality of the lines are made close by circulating these winding material groups, wherein the winding member group 25 is constituted so that a plurality of winding members 24, wherein an outer circumferential edge face to be wound with the long-length base materials is flat, are coaxially arranged. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film forming apparatus, and more specifically, by irradiating a target with laser light and depositing vapor deposition particles that have been knocked out or evaporated from the target on a substrate, such as an oxide superconductor thin film or the like. The present invention relates to an apparatus for forming a thin film that can be suitably used for forming a thin film, and that can improve the efficiency and improve the characteristics of an oxide superconducting wire using a long base.

In order to use an oxide superconductor as a conductor, it is necessary to form a thin film of an oxide superconductor with good crystal orientation on a long substrate such as a tape-shaped substrate. Since the metal tape itself is polycrystalline and its crystal structure is significantly different from that of the oxide superconductor, it is difficult to form a thin film of an oxide superconductor with good crystal orientation directly on the metal tape. Therefore, a polycrystalline intermediate thin film such as yttria-stabilized zirconia (YSZ) excellent in crystal orientation is formed on a base material made of a metal tape such as hastelloy tape, and the critical temperature is set on the polycrystalline intermediate thin film. A thin film of a Y ₁ Ba ₂ Cu ₃ O _x oxide superconductor having a magnetic field characteristic in liquid nitrogen (77K) superior to that of a Bi oxide oxide superconductor and excellent in stability is formed at about 90K. In order to form a thin film of this oxide superconductor, a thin film forming method by a laser vapor deposition method is employed.

  By the way, in the conventional method for forming a thin film by the laser vapor deposition method, scanning is performed by reciprocating the laser beam along the same path on the surface of the target. As a result, the flying direction of the vapor deposition particles struck from the target is biased, and the vapor deposition particles cannot be uniformly deposited on the polycrystalline intermediate thin film. There has been a problem that the orientation is varied and the superconducting properties such as critical current density are lowered. Therefore, the applicant of the present invention is a method for forming a thin film by laser vapor deposition that can deposit vapor deposition particles uniformly on the surface of a long substrate. A plurality of times, and depositing the vapor deposition particles on the long base material for each passage, and forming a thin film consisting of a plurality of layers on the long base material (for example, (See Patent Document 1).

In the prior art described in this patent document 1, in order to pass the elongate base material 3 several times in the deposition area | region of the said vapor deposition particle, as shown in FIGS. 6-8, the elongate base material 3 is wound. A pair of winding member groups 5 and 6 formed by coaxially arranging a plurality of winding members 4 to be rotated coaxially with the roll receiving shaft 21 are disposed opposite to each other in the processing container 2, and the pair of winding member groups 5, The long base material 3 wound around 6 is made to circulate to form a plurality of rows, and the flow of vapor deposition particles ejected from the target 9 (hereinafter referred to as plume 20) is applied to these to form a plurality of rows of the long base materials 3. A thin film is formed by depositing vapor-deposited particles on the surface. According to this conventional method, a thin film consisting of a plurality of layers can be efficiently formed on the surface of the substrate.
JP 2004-263227 A

  However, in the above-described prior art, as shown in FIGS. 8 and 9, the winding member 4 is provided with the flange portions 22 projecting in the radial direction on both sides in the thickness direction of the outer peripheral surface. Since the disk-shaped roll with the guide groove forming the guide groove 23 for introducing the long base material 3 between the portions 22 is used, the flange portion 22 of the winding member 4 is deposited as shown in FIG. In some cases, the diffusion of the particles in the direction of the long substrate surface is hindered, and the thin film cannot be stably formed. It has become clear from the study of the present inventors that this is a cause of deterioration of the superconducting properties of the obtained wire, particularly in the production of oxide superconducting wire. That is, when a roll with a guide groove is used as the winding member 4 and an oxide superconductor thin film is formed on the surface of the long base 3, the width of the long base 3 is increased as shown in FIG. There was a problem that the superconducting properties deteriorated in the thin film portion where the density of the vapor deposition particles occurred and the vapor deposition particles increased.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a manufacturing apparatus capable of manufacturing a high quality long oxide superconducting wire while preventing deterioration of superconducting characteristics during film formation.

  In order to achieve the above object, the present invention comprises a processing container for storing a long base material, and a plurality of winding members that are arranged in the processing container and wind the long base material. A laser beam is irradiated to at least a pair of winding member groups, a target holder provided in the vicinity of the long base material wound around these winding member groups, and a target held by the target holder Laser light emitting means, irradiating the surface of the target with the laser light, and depositing the evaporated particles that have been knocked out or evaporated from the target and wound around the winding member group. In the thin film forming apparatus for depositing on the surface of the long base material arranged in parallel with a plurality of rows approaching each other, the winding member group has a flat outer peripheral end surface on which the long base material is wound Coaxial multiple winding members To provide a thin film forming apparatus characterized by being constructed by arranging.

  In the thin film forming apparatus of the present invention, it is preferable that a guide roller for guiding the track of the long base material is provided in the vicinity of the winding member.

  In the thin film forming apparatus of the present invention, the target is preferably an oxide superconductor material, and the thin film is preferably an oxide superconductor thin film.

The thin film forming apparatus of the present invention uses a winding member group configured by coaxially arranging a plurality of winding members having flat outer peripheral end surfaces around which a long base material is wound. Compared to the case of using a winding member provided with ridges projecting in the radial direction on both sides in the vertical direction, the vapor deposition particles do not accumulate on the buttock, and the diffusion of the vapor deposition particles in the surface direction becomes smooth, Since vapor deposition particles uniformly adhere and deposit on the surface of the long base material, a uniform thin film with little variation in thickness and characteristics in the width direction and the longitudinal direction can be formed.
In particular, when an oxide superconductor thin film is formed on the surface of a long substrate, an environment in which a plume is sprayed on a smooth surface is obtained, so that the crystal growth of the oxide superconductor thin film in a stable and constant direction is possible. Thus, an oxide superconducting wire excellent in superconducting characteristics can be manufactured.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 to 6 are diagrams for explaining an embodiment of a thin film forming apparatus according to the present invention. FIG. 1 is a side view of a main part of the thin film forming apparatus, and FIG. 2 is a plan view of a portion A in FIG. 3 is a cross-sectional view of CC ′ portion in FIG. 2, FIG. 4 is a cross-sectional view of B portion in FIG. 1, and FIG. 5 is a cross-sectional view showing an example of an oxide superconducting wire manufactured by the thin film forming apparatus of the present invention. FIG. 6 is a block diagram showing an example of a thin film forming apparatus. In addition, in this embodiment, as shown in FIG. 5, the case where the oxide superconducting wire 30 which forms the superconducting layer 33 which consists of an oxide superconductor on the tape-shaped long base material 3 is illustrated is illustrated. ing.

  The thin film forming apparatus according to the present embodiment includes a winding member group configured by coaxially arranging a plurality of winding members 24 having a flat outer peripheral end surface around which the long base material 3 is wound on the roll receiving shaft 21. Except for using 25, it can be configured in the same manner as a conventionally known thin film forming apparatus disclosed in Patent Document 1. A thin film forming apparatus 1 shown in FIG. 6 includes a processing container 2 that houses a long base material 3 and a plurality of winding members 24 that are arranged in the processing container 2 and wind the long base material 3. A pair of winding member groups 25 and 6 arranged coaxially with the target member 10, and a target holder 10 provided in the vicinity of the long base material 3 wound around the winding member groups 25 and 6. And a laser light emitting means 11 for irradiating the target 9 held by the target holder 10 with the laser light 12, and irradiating the surface of the target 9 with the laser light 12, and depositing the evaporated particles which have been struck or evaporated from the target, It is configured to be deposited on the surface of the long base material 3 which is wound around the winding member groups 25 and 6 and circulates around these winding member groups 25 and 6 in a state in which a plurality of rows approach each other. Has been.

  The processing container 2 is provided with a transparent window 13 for introducing laser light 12 from the outside into the container, and an exhaust port 14 connected to a vacuum exhaust device 15 for maintaining the inside of the container in a decompressed state. Further, in the processing container 2, a delivery reel 7 for the long base material 3 and a take-up reel 8 for taking up the oxide superconducting wire after film formation are provided. The long wire 3 is pulled out from the delivery reel 7 and wound between the pair of winding member groups 25 and 6, and after passing through a large number of winding members 24, the long wire 3 is wound around the winding reel 8. Is provided. Between these winding member groups 25 and 6, a heater built-in base 19 for heating the long base material 3 to an appropriate film formation temperature is disposed.

  The target holder 10 provided in the processing container 2 is provided so as to be able to rotate around the center of the target 9 and to move laterally (reciprocate). As described above, by providing the target 9 so as to be rotatable and laterally movable, the surface of the target 9 is scraped almost uniformly even when film formation is continued for a long time, and the shape of the surface of the target 9 is disturbed. Therefore, the problem of changing the direction of the plume 20 can be prevented, and the superconducting layer 33 having a uniform film thickness can be formed in the longitudinal direction of the long base 3.

The target 9 attached to the target holder 10 has a composition equivalent to or close to that of the superconducting layer 33 to be formed, or a composite oxide sintered body or oxide containing many components that are easily escaped during film formation. It consists of a plate such as a superconductor. Accordingly, the oxide superconductor target 9 has a composition of Y ₁ Ba ₂ Cu ₃ O _x , Y ₂ Ba ₄ Cu ₈ O _x , Y ₃ Ba ₃ Cu ₆ O _x , (Bi, Pb) ₂ Ca ₂ Sr _3. Cu ₄ O _x having a composition, or _{Tl 2 Ba 2 Ca 2 Cu 3} O x, Tl 1 Ba 2 Ca 2 Cu 3 O x, Tl 1 Ba 2 Ca 3 Cu 4 O x having a composition of critical temperature typified It is preferable to use the same composition as that of the high superconducting layer 33 or a composition similar to it.

The laser light emitting means 11 for irradiating the target 9 with the laser light 12 may be Ar-F (193 nm), Kr-F as long as the laser light 12 capable of knocking vapor deposition particles from the target 9 is generated. Any excimer laser such as (248 nm), YAG laser, CO ₂ laser or the like may be used. The laser beam 12 emitted from the laser beam emitting means 11 passes through necessary optical systems such as the reflection mirrors 16 and 18 and the condenser lens 17 and enters the container through the transparent window 13 provided in the processing container 2. The surface of the target 9 is irradiated.

  The adjustment of the laser irradiation output can be performed by adjusting the output of an amplifying device (not shown) that supplies power to the laser light emitting means 11. The laser irradiation frequency indicates the number of laser pulses intermittently oscillated per second. This adjustment supplies power to the laser light emitting means 11 intermittently at a constant frequency. Alternatively, it can be adjusted by providing a mechanical shutter such as a rotating sector somewhere in the path through which the laser beam 12 passes and operating this mechanical shutter at a constant frequency.

  Among the pair of winding member groups 25, 6, at least one winding member group 25 includes a plurality of winding members 24 having a flat outer peripheral end surface around which the long base material 3 is wound. They are arranged coaxially. The winding member 24 has a disk shape with no irregularities such as a flange or a groove on the outer peripheral end surface. As shown in FIG. 4, a long base material 3 is wound around the outer peripheral end surface. The surface (film formation surface) of the scale substrate 3 is the outermost side. When the long base material 3 is wound around the winding member 24 to form a film, when the plume 20 is applied as shown in FIG. 1, the outer peripheral end surface of the winding member 24 is flat. As shown in FIG. 4, it is smoothly diffused in the surface direction of the long base material 3 and deposited uniformly.

  In the vicinity of the winding member 24, a plurality of guide rollers 28 for guiding the track of the long base material 3 are provided. In the present embodiment, as shown in FIGS. 2 and 3, these guide rollers 28 are provided so as to form a pair on both sides of the long base 3, and both ends of the long base 3 are guided by guide grooves 29. By guiding, the track of the long base material 3 is secured.

  Next, using the thin film forming apparatus 1 of the present embodiment configured as described above, a superconducting layer 33 made of an oxide superconductor is formed on the surface of the long base material 3, and the cross-sectional structure shown in FIG. A method for manufacturing the oxide superconducting wire 30 will be described.

This long base material 3 is made of one or two or more layers of polycrystals made of Gd ₂ Zr ₂ O ₇ , CeO ₂ , YSZ or the like on a metal tape-like base material 31 such as Hastelloy by ion beam assisted sputtering. The intermediate thin film 32 is formed.

  As a constituent material of the base material 31, a long metal tape appropriately selected from various metal materials such as stainless steel, copper, or a nickel alloy such as hastelloy can be used. The base material 31 has a thickness of 0.01 to 0.5 mm, preferably 0.02 to 0.15 mm. If the thickness of the base material 31 is 0.5 mm or more, it is thicker than the film thickness of the superconducting layer 33 described later, and the critical current density per overall (oxide superconducting conductor total cross-sectional area) is lowered. On the other hand, if the thickness of the base material 31 is less than 0.01 mm, the strength of the base material 31 is lowered and the reinforcing effect of the superconducting layer 33 is lost.

The polycrystalline intermediate thin film 32 is formed by joining and integrating a large number of fine crystal grains in which crystals having a cubic crystal structure are joined to each other via a crystal grain boundary. The c-axis is oriented substantially perpendicular to the upper surface (deposition surface) of the substrate 1, and the a-axis and the b-axis of each crystal grain are oriented in the same plane in the same direction. Yes. The thickness of the polycrystalline intermediate thin film 32 is 0.1 to 1.0 μm. Even if the thickness of the polycrystalline intermediate thin film 32 exceeds 1.0 μm, an increase in the effect can no longer be expected, which is economically disadvantageous. On the other hand, if the thickness of the polycrystalline intermediate thin film 32 is less than 0.1 μm, the superconducting layer 33 may not be sufficiently supported because it is too thin. As a constituent material of the polycrystalline intermediate thin film 32, MgO, SrTiO ₃ or the like can be used in addition to Gd ₂ Zr ₂ O ₇ , CeO ₂ , YSZ.

The superconducting layer 33 made of an oxide superconductor obtained after the film formation is composed of Y ₁ Ba ₂ Cu ₃ O _x , Y ₂ Ba ₄ Cu ₈ O _x , Y ₃ Ba ₃ Cu ₆ O _x , (Bi, Pb). ₂ Ca ₂ Sr ₃ Cu ₄ O _x , or Tl ₂ Ba ₂ Ca ₂ Cu ₃ O _x , Tl ₁ Ba ₂ Ca ₂ Cu ₃ O _x , Tl ₁ Ba ₂ Ca ₃ Cu ₄ O _x It is made of an oxide superconductor having a high critical temperature. The thickness of the superconducting layer 33 is about 0.5 to 5 μm and has a uniform thickness. Further, the film quality of the superconducting layer 33 is uniform, and the c-axis, a-axis, and b-axis of the crystal of the superconducting layer 33 are epitaxially grown and crystallized so as to match the crystal of the polycrystalline intermediate thin film 32. The orientation is excellent.

  In order to form the superconducting layer 33 on the long base 3 using the thin film forming apparatus 1 shown in FIG. 6, a pair of windings are taken out while pulling out the long base 3 wound on the delivery reel 20. The winding members 25 and 6 are sequentially wound, and then fixed to the take-up reel 8 so as to be rewound. Accordingly, the long base material 3 wound around the pair of winding member groups 25 and 6 circulates around the winding member groups 25 and 6, and the long base materials 3 are arranged in a plurality of rows at the portion where the plume 20 hits. Move side by side. Further, the target 9 is attached to the target holder 10. Thereafter, the vacuum exhaust device 15 is driven, and the inside of the processing container 2 is depressurized. At this time, oxygen gas may be introduced into the processing container 2 as necessary to make the inside of the container an oxygen atmosphere.

  Next, the heater of the heater built-in base 19 provided between the pair of winding member groups 25 and 6 is energized, and the long base material 3 wound around these winding member groups 25 and 6 is predetermined. The film is heated to an appropriate film formation temperature.

  Next, the laser beam 12 is generated from the laser beam emission means 11 while feeding the long base material 3 from the delivery reel 7, the laser beam 12 is introduced into the processing container 2 through the transparent window 13, and the target 9 is irradiated. . At this time, the target 9 may be irradiated with the laser beam 12 while performing scanning that moves the irradiation position of the laser beam 11 on the surface of the target 9. The target 9 is rotated and reciprocated in the lateral direction. Since the laser beam 12 draws a circular trajectory by the rotational movement of the target 9, the surface of the target 9 is cut into a circular shape, and the laser beam 12 moves in the radial direction of the target 9 by the reciprocating motion. 9 is also scraped from the circumferential side to the center side, so that the constituent material of the target 9 at different locations is knocked out or evaporated.

  The vapor deposition particles knocked out or evaporated from the target 9 become a plume 20 having an enlarged radial sectional area, wound around a pair of winding member groups 25 and 6, and circulates between a large number of winding members 4. By this, it adheres and is deposited on the surface of the long base material 3 that is moving side by side in a plurality of rows. As a result, a superconducting layer 33 made of an oxide superconductor is formed on the surface of the long base 3.

  The irradiation energy of the laser beam 12 is preferably in the range of 200 to 400 mJ. When the irradiation energy of the laser beam 12 is less than 200 mJ, the thermal energy applied to the target 9 is too small to sufficiently eject or evaporate the vapor deposition particles of the target 9, and the deposition rate of the superconducting layer 33 is reduced. This is because it is not efficient, and when the output of the laser beam 12 exceeds 400 mJ, the energy applied to the target 9 is too large and the target 9 may be cracked.

  Furthermore, the irradiation frequency of the laser beam 12 is preferably in the range of 10 to 200 Hz. If the irradiation frequency of the laser beam 12 is less than 10 Hz, even if the irradiation output is set to 400 mJ, the energy given to the target 9 is too small, and the vapor deposition particles of the target 9 cannot be knocked out sufficiently, and the superconducting layer 33 is formed. This is because the film speed decreases and is not efficient, and when the irradiation frequency of the laser beam 12 exceeds 200 Hz, even if the irradiation output is 200 mJ, the energy applied to the target 9 is too large and the target 9 is cracked. This is because it may occur.

  Thus, while the long base material 3 circulates the winding member groups 25 and 6, the long base material 3 passes through the region in contact with the plume 20 a plurality of times. Each time the long base material 3 passes through a region in contact with the plume 20, a thin film made of an oxide superconductor is sequentially formed. As a result, the thickness of each layer is substantially constant on the polycrystalline intermediate thin film 30. The superconducting layer 33 having such a laminated structure is formed, and the oxide superconducting wire 30 shown in FIG. 5 is obtained. After the superconducting layer 33 is formed, the obtained oxide superconducting wire 30 is taken up on the take-up reel 8.

  Since this thin film forming apparatus 1 uses a winding member group 25 configured by coaxially arranging a plurality of winding members 24 each having a flat outer peripheral end surface around which the long base material 3 is wound. Compared to the case of using the winding member 4 provided with the flanges 22 projecting in the radial direction on both sides in the thickness direction of the outer peripheral surface, the vapor deposition particles are not deposited on the flanges. Since diffusion in the surface direction becomes smooth and vapor deposition particles adhere and deposit uniformly on the surface of the long base material 3, it is possible to form a uniform thin film with little variation in thickness and characteristics in the width direction and longitudinal direction. it can.

  Further, by providing a guide roller 28 for guiding the track of the long base material 3 in the vicinity of the winding member 24, the track of the long base material 3 can be used even when the winding member 24 having a flat outer peripheral end surface is used. Can be secured sufficiently. Further, by using the guide roller 28 for the guide portion, friction at the guide portion can be almost eliminated, and there is no possibility of damaging the long base material 3.

  According to the thin film forming apparatus 1 of the present embodiment, when the superconducting layer 33 made of an oxide superconductor is formed on the surface of the long base material 3, an environment in which the plume 20 is sprayed on a smooth surface is obtained. The superconducting layer 33 can be stably grown in a certain direction, and the oxide superconducting wire 30 having excellent superconducting characteristics can be manufactured.

The above-described embodiment is merely an example of the present invention, and the present invention is not limited to the present embodiment, and various changes and modifications can be made.
For example, in the above-described embodiment, an apparatus for forming the superconducting layer 33 made of an oxide superconductor as a thin film is illustrated. However, the thin film forming apparatus of the present invention is a material that can be used for other laser deposition, for example, It can be applied to film formation of various ceramic materials and metal materials.
Moreover, the elongate base material 3 is not limited to tape shape, A cross-section circular wire etc. may be sufficient.

[Comparative example]
In the thin film forming apparatus shown in FIG. 6, a conventional thin film having winding member groups 5 and 6 formed by coaxially arranging a plurality of winding members 4 provided with flanges on the outer peripheral end face as shown in FIG. Using a forming apparatus, a superconducting layer made of Y ₁ Ba ₂ Cu ₃ O _x was formed on the surface of a tape-like long substrate. A superconducting layer made of Y ₁ Ba ₂ Cu ₃ O _x having a thickness of 1 μm was formed by continuous film formation for about 10 hours at a line speed of 10 m / hour, and an oxide superconducting wire having a total length of 100 m was manufactured. The critical current (Ic) of the obtained oxide superconducting wire was 100 m and Ic = 250A. Although the critical current of the wire at the start of film formation was as high as Ic = 350 A, the characteristics gradually decreased from the latter half of the film formation, and the critical current at the end of film formation was Ic = 250 A.
In order to investigate the cause of this Ic characteristic deterioration, the superconducting layer of the obtained oxide superconducting wire was subjected to XRD analysis. As a result, it was found that in the superconducting layer where the characteristic was gradually lowered from the latter half of the film formation, the number of a-axis oriented particles increased from that at the start of film formation.

[Example]
On the other hand, in the thin film forming apparatus shown in FIG. 6, as shown in FIG. 4, the thin film forming apparatus according to the present invention has a winding member group 25 in which a plurality of winding members 24 whose outer peripheral end surfaces are flat are arranged coaxially. A superconducting layer made of Y ₁ Ba ₂ Cu ₃ O _x was formed on the surface of the tape-like long base material in the same manner as in the comparative example. A superconducting layer made of Y ₁ Ba ₂ Cu ₃ O _x having a thickness of 1 μm was formed by continuous film formation for about 10 hours at a line speed of 10 m / hour, and an oxide superconducting wire having a total length of 100 m was manufactured. The critical current (Ic) of the obtained oxide superconducting wire was Ic = 400 A over the entire length of 100 m, and an oxide superconducting wire having higher characteristics than the comparative example could be produced.
Also, in the continuous film formation experiment for about 50 hours longer than this, the oxide superconducting wire having Ic = 380A with a total length of 500 m could be produced by the thin film forming apparatus according to the present invention.

It is a principal part side view which shows 1st Embodiment of the thin film forming apparatus of this invention. It is a top view of the A section in FIG. It is sectional drawing of the C-C 'part in FIG. It is sectional drawing of the B section in FIG. It is sectional drawing which shows an example of the oxide superconducting wire manufactured with the thin film forming apparatus of this invention. It is a block diagram which shows one Embodiment of the thin film forming apparatus of this invention. It is a principal part side view of the conventional thin film forming apparatus. It is a principal part top view of the conventional thin film forming apparatus. It is sectional drawing of the D section of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Thin film forming apparatus, 2 ... Processing container, 3 ... Long base material, 4 ... Winding member, 5,6 ... Winding member group, 7 ... Sending reel, 8 ... Winding reel, 9 ... Target, 10 ... Target holder, 11 ... laser light emitting means, 12 ... laser light, 13 ... transparent window, 14 ... exhaust port, 15 ... vacuum exhaust device, 16, 18 ... reflecting mirror, 17 ... condensing lens, 19 ... base with built-in heater 20 ... plume, 21 ... roll bearing shaft, 22 ... collar, 23 ... guide groove, 24 ... winding member, 25 ... winding member group, 28 ... guide roller, 29 ... guide groove, 30 ... oxide superconducting wire 31 ... Base material, 32 ... Polycrystalline intermediate thin film, 33 ... Superconducting layer (oxide superconductor thin film).

Claims (3)

A processing container for storing a long base material, at least a pair of winding member groups in which a plurality of winding members that are arranged in the processing container and wind the long base material are coaxially arranged, and these A target holder provided in the vicinity of the long base material wound around the winding member group, and laser light emitting means for irradiating the target held by the target holder with laser light, the laser light Is irradiated on the surface of the target, and the vapor deposition particles struck or evaporated from the target are wound around the winding member group and are rotated around the winding member group so that a plurality of rows approach each other in parallel. In the thin film forming apparatus for depositing on the surface of the long base material arranged in
The winding member group is configured by coaxially arranging a plurality of winding members having flat outer peripheral end surfaces around which the long base material is wound.   The thin film forming apparatus according to claim 1, wherein a guide roller that guides a track of the long base material is provided in the vicinity of the winding member. The thin film forming apparatus according to claim 1, wherein the target is an oxide superconductor material, and the thin film is an oxide superconductor thin film.

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