JP2006232575A - Dielectric porcelain composition for high frequency, dielectric resonator, dielectric filter, dielectric duplexer and communication equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric porcelain composition for high frequency having high specific dielectric constant (εr), high Q value, small absolute temperature coefficient (τf) of resonant frequency and capable of efficiently recovering the Q value by a low temperature heat treatment after laser machining, and to provide a dielectric resonator, a dielectric filter, a dielectric duplexer and communication equipment, which use the same. <P>SOLUTION: The dielectric porcelain composition for high frequency contains Fe in an amount ranging from >1.0 to ≤2.5 pts.wt. expressed in terms of Fe<SB>2</SB>O<SB>3</SB>based on 100 pts.wt. main components, wherein x,y,z,s,t and u being expressed by general formula, xBaO-yTiO-zä(1-s-t-u)SmO<SB>3/2</SB>-sNdO<SB>3/2</SB>-tPrO<SB>11/6</SB>-uCeO<SB>2</SB>} satisfy relations of 0.10≤x≤0.20, 0.55≤y≤0.68, 0.15≤z≤0.35, 0.20≤s≤0.65, 0≤t≤0.25, 0≤u≤0.03 and x+y+z=1. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a high-frequency dielectric ceramic composition used in a high-frequency region such as a microwave or a millimeter wave, and a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device configured using the same About.

  In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used as materials constituting dielectric resonators and circuit boards.

  When such a high-frequency dielectric ceramic is used for a dielectric resonator, a dielectric filter, or the like, it is required to have the following dielectric characteristics.

(1) Since the relative dielectric constant (εr) is high (that is, the wavelength of electromagnetic waves is shortened to 1 / (εr) ^1/2 in the dielectric, from the viewpoint of improving the compatibility with miniaturization, The relative dielectric constant (εr) is required to be high).
(2) The dielectric loss is small (that is, the Q value is high).
(3) The temperature stability of the resonance frequency is good (that is, the temperature coefficient (τf) of the resonance frequency is around 0 ppm / ° C.).

The temperature coefficient (τf) of the resonance frequency is the slope when the resonance frequency temperature curve is linearly approximated using the resonance frequency (f ₂₅ ) at 25 ° C. and the value of the resonance frequency (f ₅₅ ) at 55 ° C. and represents the (primary differential coefficient), the value is determined by .tau.f = formula _{(f 55 -f 25) / (} f 25 · (55 ℃ -25 ℃)).

Therefore, BaO—Sm ₂ O ₃ − is a BaO—Sm ₂ O ₃ − high-frequency dielectric ceramic composition that can satisfy the above-described requirements and has a large relative dielectric constant εr and unloaded Q and a small absolute value of the temperature coefficient τf. Nd ₂ O ₃ —CeO ₂ —TiO ₂ based dielectric ceramics for microwaves have been proposed (Patent Document 1).

In addition to the main component of BaO—Sm ₂ O ₃ —Nd ₂ O ₃ —Pr ₆ O ₁₁ —CeO ₂ —TiO ₂ , an oxide of Fe as a subcomponent is added to Fe ₂ O _3. For example, a dielectric ceramic composition added with 1.0% by weight or less has been proposed (Patent Document 2).

  And when the dielectric ceramic for microwaves of patent document 1 as mentioned above and the dielectric ceramic composition of patent document 2 are used, it is possible to obtain a high dielectric constant and a high Q value in the microwave band. As a result, it becomes possible to realize a temperature coefficient having a good resonance frequency.

By the way, in recent years, in a dielectric resonator, a dielectric filter, and the like, in order to obtain desired characteristics, a process for processing an electrode formed on the dielectric with high precision by a laser processing method is required. Yes.
However, when the dielectric ceramic for microwave of Patent Document 1 and the electrode formed on the surface of the dielectric ceramic composition of Patent Document 2 are laser processed, the dielectric ceramic for microwave and dielectric ceramic composition are also used. There is a problem that the laser processing is affected and the characteristics such as the Q value are deteriorated.
Therefore, in order to recover the characteristics such as the Q value, a method of recovering the characteristics such as the Q value by re-oxidizing the damaged ceramic (dielectric ceramic) after laser processing has been considered.
However, in the case of the dielectric ceramics for microwaves of Patent Document 1 and the dielectric ceramic composition of Patent Document 2, it is not easy to sufficiently recover the Q value even by heat treatment, and a product having desired characteristics is obtained. There is a problem that it is difficult to obtain.

On the other hand, when heat treatment is performed at a high temperature in order to recover the Q value, the ceramic (dielectric ceramic) is re-oxidized to recover the Q value. In addition, there is a problem that the electrodes (such as the inner conductor and the outer conductor in the dielectric resonator) are oxidized and the characteristics of the product are impaired.
JP-A-2-239150 JP 2004-123466 A

  The invention of the present application solves the above-described problems, and the relative dielectric constant (εr) and Q value are high, the absolute value of the temperature coefficient (τf) of the resonance frequency is small, and after laser processing, To provide a dielectric ceramic composition for high frequency capable of efficiently recovering the Q value by heat treatment at a low temperature, a dielectric resonator using the same, a dielectric filter, a dielectric duplexer, and a communication device. With the goal.

In order to solve the above problems, the dielectric ceramic composition for high frequency of the present invention (Claim 1) is:
General formula: When represented xBaO-yTiO ₂ -z in {(1-s-t- u) SmO 3/2 -sNdO 3/2 -tPrO 11/6 -uCeO 2}), x, y, z, s , T and u are respectively
0.10 ≦ x ≦ 0.20,
0.55 ≦ y ≦ 0.68,
0.15 ≦ z ≦ 0.35
0.20 ≦ s ≦ 0.65
0 ≦ t ≦ 0.25,
0 ≦ u ≦ 0.03
x + y + z = 100
For 100 parts by weight of the main component satisfying the relationship
Fe is contained in an amount exceeding 1.0 part by weight and not exceeding 2.5 parts by weight in terms of Fe ₂ O ₃ .

  The dielectric resonator according to the present invention (Claim 2) is a dielectric resonator in which the dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the dielectric ceramic is claimed in claim. It is characterized by comprising the dielectric ceramic composition for high frequency described in 1.

  A dielectric filter according to the present invention (Claim 3) includes the dielectric resonator according to Claim 2 and external coupling means connected to an input / output terminal of the dielectric resonator. It is a feature.

  The dielectric duplexer of the present invention (Claim 4) includes at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and an antenna commonly connected to the dielectric filters. A dielectric duplexer comprising connecting means, wherein at least one of the dielectric filters is the dielectric filter according to claim 3.

  According to a fifth aspect of the present invention, there is provided a communication apparatus comprising a dielectric duplexer according to claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and the transmission circuit. A reception circuit connected to at least one input / output connection means different from the input / output means connected to the antenna, and an antenna connected to the antenna connection means of the dielectric duplexer. .

High frequency dielectric ceramic composition of the present invention (claim 1) has the general _{formula: xBaO-yTiO 2 -z {(} 1-s-t-u) SmO 3/2 -sNdO 3/2 -tPrO 11/6 −uCeO ₂ }), x, y, z, s, t, and u are 0.10 ≦ x ≦ 0.20, 0.55 ≦ y ≦ 0.68, and 0.15 ≦ z ≦, respectively. 0.35, 0.20 ≦ s ≦ 0.65, 0 ≦ t ≦ 0.25, 0 ≦ u ≦ 0.03, 100 parts by weight of the main component satisfying the relationship x + y + z = 100, Fe is Since it is contained in the range exceeding 1.0 part by weight and not exceeding 2.5 parts by weight in terms of Fe ₂ O ₃ , the relative dielectric constant (εr) and the Q value are high, and the temperature coefficient of the resonance frequency Even if the absolute value of (τf) is small and the heat treatment temperature after laser processing is low, the Q value can be sufficiently recovered. High-frequency dielectric ceramic composition.

  In addition, since the Q value can be recovered at a low heat treatment temperature, for example, when a dielectric resonator including an inner conductor and an outer conductor is configured using the dielectric ceramic composition for high frequency of the present invention. In addition, it is possible to prevent the inner conductor and the outer conductor from being oxidized in the heat treatment step after laser processing, and to obtain a product having desired characteristics.

That is, in the dielectric ceramic composition for high frequency of the present invention, Fe exceeds 1.0 part by weight and exceeds 2.5 parts by weight in terms of Fe ₂ O ₃ with respect to 100 parts by weight of the main component. Since it is contained within a range, even after the laser processing, even if the heat treatment temperature is low, it becomes possible to perform the reoxidation efficiently and the Q value can be sufficiently recovered. .

  In the present invention, the range of x is 0.10 ≦ x ≦ 0.20 because when x is out of the range of 0.10 to 0.20, the absolute value of the temperature coefficient (τf) of the resonance frequency Is larger than 20 (ppm / ° C.), which is not preferable.

  Further, the range of y is set to 0.55 ≦ y ≦ 0.68 because if y is less than 0.55, sintering becomes difficult, and if y exceeds 0.68, the relative dielectric constant (εr) is increased. This is because it becomes smaller and undesirable.

  Further, the range of z is set to 0.15 ≦ z ≦ 0.35 because when z is out of the range of 0.15 to 0.35, the absolute value of the temperature coefficient (τf) of the resonance frequency is 20 (ppm) / ° C), which is not preferable.

  The range of s is set to 0.20 ≦ s ≦ 0.65 because when s is out of the range of 0.20 to 0.65, the absolute value of the temperature coefficient (τf) of the resonance frequency is 20 (ppm) / ° C), which is not preferable.

  Also, the range of t is set to 0 ≦ t ≦ 0.25 because when t exceeds 0.25, the absolute value of the temperature coefficient (τf) of the resonance frequency becomes larger than 20 (ppm / ° C.), Because it is not preferable.

  In addition, the range of u is set to 0 ≦ u ≦ 0.03 because when u exceeds 0.03, the absolute value of the temperature coefficient (τf) of the resonance frequency becomes larger than 20 (ppm / ° C.), Because it is not preferable.

  The dielectric resonator according to the present invention (Claim 2) is a dielectric resonator in which a dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the high frequency according to Claim 1 is used as the dielectric ceramic. Dielectric porcelain comprising a dielectric ceramic composition for use (that is, having a high relative dielectric constant (εr), a high Q value, a small absolute value of the temperature coefficient (τf) of the resonance frequency, and laser processing Is used, a dielectric ceramic capable of sufficiently recovering the Q value even when the heat treatment temperature is low) is used, so that the size is small, the dielectric loss is small, and the temperature stability of the resonance frequency is improved. Since the Q value can be recovered by heat treatment at a low temperature even after laser processing, the characteristics can be adjusted with high accuracy, and a dielectric resonator having desired characteristics can be obtained. It becomes possible to provide.

  Moreover, since the dielectric filter of the present invention (Claim 3) includes the dielectric resonator according to Claim 2 and external coupling means connected to the input / output terminals of the dielectric resonator, It is possible to provide a dielectric filter having a small size and good characteristics.

  The dielectric duplexer of the present invention (Claim 4) includes at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filters. A dielectric duplexer comprising: and a dielectric duplexer having good characteristics because the dielectric filter according to claim 3 is used as at least one of the dielectric filters. It becomes possible.

  A communication device according to the present invention (Claim 5) is connected to the dielectric duplexer according to Claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and a transmission circuit. A receiving circuit connected to at least one input / output connection means different from the input / output means and an antenna connected to the antenna connection means of the dielectric duplexer. It is possible to provide a communication device provided.

  The features of the present invention will be described in more detail below with reference to examples of the present invention.

[Fabrication of dielectric ceramic composition for high frequency use]
(1) As starting materials, high-purity barium carbonate (BaCO ₃ ), rare earth oxides (Sm ₂ O ₃ , Nd ₂ O ₃ , Pr ₆ O ₁₁ , CeO ₂ ), titanium oxide (TiO ₂ ), iron oxide ( Each powder of Fe ₂ O ₃ ) was prepared.
(2) Next, the general formula: when expressed in _{xBaO-yTiO 2 -z {(1} -s-t-u) SmO 3/2 -sNdO 3/2 -tPrO 11/6 -uCeO 2}), Each of the above starting raw material powders was prepared so that x, y, z, s, t, and u had values as shown in Tables 1, 2, 3, and 4.
Note that the iron oxide (Fe ₂ O _3), relative to 100 parts by weight of the main component represented by the general formula described above, as shown in Tables 1-4, 0.0 parts by weight to 3.0 parts by weight It mix | blended in the ratio which becomes the range of.
(3) Then, this blended powder was wet-mixed for 16 hours using a ball mill and dispersed uniformly, and then subjected to dehydration and drying treatments to obtain adjusted powder.
(4) The adjusted powder is calcined at a temperature of 1000 to 1200 ° C. for 3 hours, an appropriate amount of binder is added to the obtained calcined powder, and wet pulverized again using a ball mill for 16 hours. A powder was obtained.
(5) Then, press molding the powder for burning, to ^{1500kgf / cm 2 ~2500kgf / cm 2} (1.47 × 10 2 MPa~2.45 × 10 2 MPa) cylindrical at a pressure of (disc-like) After that, firing was performed at 1300 to 1400 ° C. for 4 hours in the atmosphere, and as shown in FIG. 1, a cylindrical (disk-shaped) having a diameter (D) of 7.50 mm and a thickness (T) of 3.75 mm. Sample 1 was obtained.

[Measurement of characteristics]
(a) Measurement of characteristics before laser processing Then, for each of the obtained sintered bodies (each sample), the relative dielectric constant (εr) and the Q value at a measurement frequency f of 6 to 7 GHz are calculated as both-end short-circuited dielectric resonance. It measured by the device method and converted into Qxf value. Further, the resonance frequency was measured by a cavity method using the TE _01δ mode, and the temperature coefficient (τf) of the resonance frequency in the temperature range of 25 to 55 ° C. was measured. The Q × f value obtained by the above measurement was defined as the initial characteristic (before laser processing) Q.

(b) Measurement of characteristics after laser processing Then, the outer peripheral surface 2 of the cylindrical (disc-shaped) sample 1 produced as described above is laser processed, and the subsequent Q × f value is the same as that of the above method. It measured by the method of this, and it was set as Q after laser processing.

(c) Measurement of characteristics after heat treatment after laser processing The sample after laser processing as described above was heat-treated in a reducing atmosphere with an oxygen concentration of 10 ppm (30 minutes at 300 ° C. or 30 minutes at 350 ° C. ), The Q × f value was measured by the same method as described above, and the Q after heat treatment at 300 ° C. and the Q after heat treatment at 350 ° C. were respectively obtained.

[Characteristic evaluation]
Initial characteristics (relative permittivity (εr), Q before laser processing, and temperature coefficient of resonance frequency (τf)), characteristics after laser processing (Q and Q decrease after laser processing) measured as described above Table 1, 2, 3, and 4 show the properties after heat treatment (Q after heat treatment, and Q recovery rate). Here, the Q reduction rate after laser processing is an index indicating how much the Q after laser processing has decreased with reference to Q before laser processing, and (Q after laser processing-Q before laser processing). / Given by Q × 100 before laser processing. The Q recovery rate after laser processing is an index indicating to what percentage of Q before laser processing is recovered by heat treatment, and is given by Q after heat processing / Q × 100 before laser processing.
In addition, the samples after the laser processing and after the heat treatment were not examined for the samples (sample numbers 1, 2, 8, 20, 25, 27, 29, 30, 31, 34, 36) whose initial characteristics are defective. .

  In Tables 1, 2, 3, and 4, the sample numbers marked with * are samples outside the scope of the present invention.

  From Tables 1, 2, 3, and 4, as a whole, when laser processing is performed on each sample, the Q value decreases (substantially halves), but the Q value tends to recover by heat treatment. I understand.

Further, from the comparison of the characteristics before and after the 300 ° C. heat treatment of the sample No. 11 to which Fe ₂ O ₃ was not added and the samples No. 12 to 19 to which Fe ₂ O ₃ was added, Fe ₂ O ₃ It can be seen that the sample to which is added has a high Q value recovery rate.
However, in the samples Nos. 12, 13, and 14 in which the Fe ₂ O ₃ addition amount is 1.0 part by weight or less, the Q recovery rate is less than 98% even when heat-treated at 350 ° C., and the addition amount of Fe As for Fe ₂ O ₃ , it is understood that it is desirable to make the amount more than 1.0 part by weight with respect to 100 parts by weight of the main component.
Further, in the case of samples Nos. 4, 5, 6, and Nos. 21 and 22 in which the Fe ₂ O ₃ addition amount is 1.0 part by weight or less, the Q recovery rate when heat-treated at 350 ° C. is 98%. From this result, it can be seen that the addition amount of Fe is desirably more than 1.0 part by weight with respect to 100 parts by weight of the main component as Fe ₂ O ₃ .

On the other hand, when the Fe ₂ O ₃ addition amount exceeds 2.5 parts by weight, as in the sample of Sample No. 20 in which the Fe ₂ O ₃ addition amount is 3.0 parts by weight, the Q value of the initial characteristics becomes 5000 or less. It will decline. Therefore, it can be seen that the addition amount of Fe is desirably not more than 2.5 parts by weight as Fe ₂ O _{3 with} respect to 100 parts by weight of the main component.

  Further, when x <0.10 as in the sample of sample number 1 or when x> 0.20 as in the sample of sample number 36, the absolute value of the temperature coefficient (τf) of the resonance frequency. Becomes larger than 20 (ppm / ° C.). From this result, it can be seen that in the high frequency dielectric ceramic composition of the present invention, it is desirable that the range of x is 0.10 ≦ x ≦ 0.20.

  In addition, when y <0.55 as in the samples with sample numbers 2 and 30, sintering is difficult, and when y> 0.68 as in the samples with sample numbers 31 and 34, The relative dielectric constant εr is smaller than 55. From this result, it can be seen that in the high frequency dielectric ceramic composition of the present invention, the range of y is preferably 0.55 ≦ y ≦ 0.68.

  In addition, when z <0.15 as in the sample of sample number 34 or when z> 0.35 as in the sample of sample number 2, the absolute value of the temperature coefficient (τf) of the resonance frequency. Becomes larger than 20 (ppm / ° C.). From this result, it can be seen that the range of z is preferably 0.15 ≦ z ≦ 0.35.

  Further, when s <0.20 as in the sample of sample number 8 or when s> 0.65 as in the sample of sample number 25, the absolute value of the temperature coefficient (τf) of the resonance frequency. Becomes larger than 20 (ppm / ° C.). From this result, it can be seen that the range of s is preferably 0.20 ≦ s ≦ 0.65.

  Further, as in the sample of sample number 27, when t> 0.25, the temperature coefficient (τf) of the resonance frequency is larger than +20 (ppm / ° C.). From this, it can be seen that it is desirable to set the range of t to 0 ≦ t ≦ 0.25.

  Further, as in the sample of sample number 29, when u> 0.03, the temperature coefficient (τf) of the resonance frequency is larger than +20 (ppm / ° C.). From this, it can be seen that the range of u is preferably 0 ≦ u ≦ 0.03.

  FIG. 2 is a diagram showing a dielectric resonator manufactured using the high frequency dielectric ceramic composition of the present invention (for example, the high frequency dielectric ceramic composition of sample number 9 in Table 1). A perspective view and (b) are front sectional views.

The dielectric resonator 10 is a type of dielectric resonator that is operated by electromagnetic coupling of the dielectric ceramic to the input / output terminals. As shown in FIGS. 2 (a) and 2 (b), the through-hole 12 is used. A rectangular parallelepiped dielectric block (dielectric ceramic) 11, an outer conductor 13 formed on the outer peripheral surface of the dielectric block 11, and an inner conductor formed on the inner peripheral surface of the through hole 12 of the dielectric block 11 14. The outer conductor 13 is formed on the one end face 15 of the dielectric block 11, but the outer conductor is not formed on the other end face 16 facing the one end face 15, and the dielectric ceramic is exposed. have.
In the dielectric resonator 10 of the second embodiment, base metal Cu is used as a constituent material of the inner conductor 14 and the outer conductor 13.

  In this dielectric resonator 10, the inner conductor 14 formed on the inner peripheral surface of the through hole 12 or the outer conductor 13 formed on the outer peripheral surface of the dielectric block 11 is laser-processed (inner conductor 14 and The characteristics are adjusted (for example, the resonance frequency is adjusted) by removing a part of the outer conductor 13).

  Since this dielectric resonator 10 uses a high frequency dielectric ceramic composition (for example, the high frequency dielectric ceramic composition of sample number 9 in Table 1) having the requirements of the present invention, the inner conductor 14 After the outer conductor 13 is laser processed, the dielectric block 11 affected by the laser processing is sufficiently heat-treated at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm. The Q value can be recovered. Therefore, after laser processing, the characteristics can be recovered and a dielectric resonator having desired characteristics can be obtained.

  As described above, in the dielectric resonator 10 of the second embodiment, the base metal Cu is used as the constituent material of the inner conductor 14 and the outer conductor 13, but the Q value after laser processing is recovered. For example, the heat treatment is performed at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm, so that the inner conductor 14 and the outer conductor 13 are prevented from being oxidized, and thus desired. A dielectric resonator having the following characteristics can be obtained.

  FIG. 3 is a perspective view showing a dielectric filter manufactured using the high frequency dielectric ceramic composition of the present invention (for example, the high frequency dielectric ceramic composition of Sample No. 9 in Table 1).

As shown in FIG. 3, the dielectric filter 20 includes a rectangular parallelepiped dielectric block (dielectric ceramic) 21 having a plurality of through holes 22, and an outer conductor 23 formed on the outer peripheral surface of the dielectric block 21. The inner conductor 24 formed on the inner peripheral surface of the through hole 22 of the dielectric block 21, the external coupling means 27a formed from the upper surface 28 to the front end surface 29a, and the outer coupling formed from the upper surface 28 to the rear end surface 29b. Means 27b are provided. The outer conductor 23 is formed on one end face (right end face) 25 of the dielectric block 21, but the outer conductor is formed on the other end face (left end face) 26 facing the one end face (right end face) 25. However, the dielectric ceramic is exposed.
Also in the dielectric filter 20 of the third embodiment, base metal Cu is used as a constituent material of the inner conductor 24 and the outer conductor 23.

  In this dielectric filter 20, the characteristics of the inner conductor 24 formed on the inner peripheral surface of the through hole 22 or the outer conductor 23 formed on the outer peripheral surface of the dielectric block 21 are adjusted by laser processing ( For example, the filter waveform is adjusted).

In this dielectric filter 20, since the high frequency dielectric ceramic composition (for example, the high frequency dielectric ceramic composition of sample number 9 in Table 1) having the requirements of the present invention is used, the inner conductor 24 and After the outer conductor 23 is laser processed, the dielectric block 21 affected by the laser processing is sufficiently heat-treated at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm. The Q value can be recovered. Therefore, after performing laser processing, characteristics can be recovered and a dielectric filter having desired characteristics can be reliably manufactured.
As described above, the dielectric filter 20 of Example 3 also uses the base metal Cu as the constituent material of the inner conductor 24 and the outer conductor 23, but recovers the Q value after laser processing. For example, the heat treatment is performed at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm, so that the inner conductor 24 and the outer conductor 23 are prevented from being oxidized, and the desired heat treatment is performed. A dielectric filter having characteristics can be obtained.

  FIG. 4 is a perspective view showing a dielectric duplexer manufactured using the high frequency dielectric ceramic composition of the present invention (for example, the high frequency dielectric ceramic composition of Sample No. 9 in Table 1).

As shown in FIG. 4, the dielectric duplexer 30 includes a rectangular parallelepiped dielectric block 31 having a plurality of (four) through holes 32, an outer conductor 33 formed on the outer peripheral surface of the dielectric block 31, An inner conductor 34 formed on the inner peripheral surface of the through hole 32 of the dielectric block 31, an input connection means 36, an output connection means 37, and an antenna connection means 38 formed so as to go from the upper surface 39 to the left end surface 39 b. ing. The outer conductor 33 is formed on one end face (right end face) 39a of the dielectric block 31, but the outer conductor is formed on the other end face (left end face) 39b facing the one end face (right end face) 39a. However, the dielectric ceramic is exposed.
Also in the dielectric duplexer 30 of the fourth embodiment, base metal Cu is used as a constituent material of the inner conductor 34 and the outer conductor 33.

  In the dielectric duplexer 30, the characteristics are adjusted by laser processing the inner conductor 34 formed on the inner peripheral surface of the through hole 32 or the outer conductor 33 formed on the outer peripheral surface of the dielectric block 31. It is configured as follows.

In this dielectric duplexer 30, the high frequency dielectric ceramic composition having the requirements of the present invention (for example, the high frequency dielectric ceramic composition of sample number 9 in Table 1) is used. After the outer conductor 33 is laser processed, the dielectric block 31 affected by the laser processing is sufficiently heat-treated at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm. The Q value can be recovered. Therefore, after laser processing, the characteristics can be recovered and a dielectric duplexer having desired characteristics can be reliably manufactured.
As described above, the dielectric duplexer 30 of the fourth embodiment also uses base metal Cu as the constituent material of the inner conductor 34 and the outer conductor 33, but recovers the Q value after laser processing. For example, since the heat treatment is performed at a low temperature such as 300 to 350 ° C. in a reducing atmosphere having an oxygen concentration of about 10 ppm, the inner conductor 34 and the outer conductor 33 are prevented from being oxidized, and the desired heat treatment is performed. A dielectric duplexer having characteristics can be obtained.

  FIG. 5 is a block diagram showing an example of a communication device configured using the dielectric resonator 10 of the second embodiment shown in FIG.

The communication device 40 shown in FIG. 5 includes a dielectric duplexer 42, a transmission circuit 44, a reception circuit 46, and an antenna 48.
The transmission circuit 44 is connected to the input connection means 50 of the dielectric duplexer 42, and the reception circuit 46 is connected to the output connection means 52 of the dielectric duplexer 42.
The antenna 48 is connected to the antenna connection means 54 of the dielectric duplexer 42.

  The dielectric duplexer 42 constituting the communication device 40 includes two dielectric filters 56 and 58. The dielectric filters 56 and 58 are configured by connecting the external coupling means 60 to the dielectric resonator 10 of the present invention. In the embodiment shown in FIG. 5, each of the dielectric filters 56 and 58 is configured by connecting the external coupling means 60 to the input / output terminals provided in the dielectric resonator 10.

  One dielectric filter 56 is disposed between the input connection means 50 and the other dielectric filter 58, and the other dielectric filter 58 is connected between the one dielectric filter 56 and the output connection means 52. It is arranged in between.

  In this communication device 40, a dielectric resonator 10 using a high frequency dielectric ceramic composition (for example, a high frequency dielectric ceramic composition of sample number 9 in Table 1) having the requirements of the present invention is used. Therefore, after laser processing the inner conductor and outer conductor of the dielectric resonator 10, the dielectric block affected by the laser processing can be heat treated at a low temperature to recover the Q value. . Therefore, by using a dielectric resonator using the high frequency dielectric ceramic composition of the present invention, it becomes possible to reliably obtain a communication device having desired characteristics.

  The invention of the present application is not limited to the above-described embodiments. The presence or absence of a trace amount additive to the dielectric ceramic composition for high frequency, specific firing conditions, heat treatment conditions after laser processing, dielectric resonator With respect to specific configurations of the dielectric filter, the dielectric duplexer, and the communication device, various applications and modifications can be added within the scope of the invention.

As described above, according to the present invention, the relative permittivity (εr) and the Q value are high, the absolute value of the temperature coefficient (τf) of the resonance frequency is small, and heat treatment is performed at a low temperature after laser processing. It becomes possible to provide a high frequency dielectric ceramic composition capable of restoring characteristics, and by using this high frequency dielectric ceramic composition, the dielectric resonance having a small size and excellent characteristics can be provided. Can be advantageously constructed of a device, a dielectric filter, a dielectric duplexer, and a communication device.
Therefore, the present invention can be widely used in fields such as dielectric resonators, dielectric filters, dielectric duplexers, and communication apparatus.

It is a figure which shows the column-shaped (disk shape) sample produced in order to investigate the characteristic of the high frequency dielectric ceramic composition concerning one Example of this invention. It is a figure which shows the dielectric resonator of Example 2 formed using the dielectric ceramic composition for high frequencies of this invention, (a) is a perspective view, (b) is front sectional drawing. It is a perspective view which shows the dielectric material filter concerning one Example (Example 3) of this invention. It is a perspective view which shows the dielectric duplexer concerning one Example (Example 4) of this invention. It is a block diagram which shows the communication apparatus concerning one Example (Example 5) of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sample 2 Outer peripheral surface 10 Dielectric resonator 11 Dielectric block (dielectric ceramic)
DESCRIPTION OF SYMBOLS 12 Through-hole 13 Outer conductor 14 Inner conductor 15 One end surface 16 The other end surface 20 Dielectric filter 21 Dielectric block (dielectric porcelain)
22 Through-hole 23 Outer conductor 24 Inner conductor 25 One end face (right end face) of the dielectric block
26 The other end face (left end face) of the dielectric block
27a, 27b External coupling means 28 Upper surface of dielectric block 29a Front end face of dielectric block 29b Rear end face of dielectric block 30 Dielectric duplexer 31 Dielectric block 32 Through hole 33 Outer conductor 34 Inner conductor 36 Input connection means 37 Output Connection means 38 Antenna connection means 39 Upper surface 39a of dielectric duplexer One end face (right end face) of dielectric duplexer
39b Dielectric duplexer other end face (left end face)
DESCRIPTION OF SYMBOLS 40 Communication apparatus 42 Dielectric duplexer 44 Transmission circuit 46 Reception circuit 48 Antenna 50 Input connection means 52 Output connection means 54 Antenna connection means 56, 58 Dielectric filter 60 External coupling means

Claims (5)

General formula: When represented xBaO-yTiO ₂ -z in {(1-s-t- u) SmO 3/2 -sNdO 3/2 -tPrO 11/6 -uCeO 2}), x, y, z, s , T and u are respectively
0.10 ≦ x ≦ 0.20,
0.55 ≦ y ≦ 0.68,
0.15 ≦ z ≦ 0.35
0.20 ≦ s ≦ 0.65
0 ≦ t ≦ 0.25,
0 ≦ u ≦ 0.03
x + y + z = 100
For 100 parts by weight of the main component satisfying the relationship
A dielectric ceramic composition for high frequency, wherein Fe is contained in an amount exceeding 1.0 part by weight and not exceeding 2.5 parts by weight in terms of Fe ₂ O ₃ .   2. A dielectric resonator in which a dielectric ceramic is operated by electromagnetic coupling to an input / output terminal, and the dielectric ceramic is made of the dielectric ceramic composition for high frequency according to claim 1. A dielectric resonator.   A dielectric filter comprising: the dielectric resonator according to claim 2; and an external coupling means connected to an input / output terminal of the dielectric resonator.   A dielectric duplexer comprising at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filter, wherein the dielectric The dielectric duplexer according to claim 3, wherein at least one of the filters is a dielectric filter according to claim 3.   5. The dielectric duplexer according to claim 4, a transmission circuit connected to at least one input / output connection means of the dielectric duplexer, and at least one input different from the input / output means connected to the transmission circuit. A communication apparatus comprising: a receiving circuit connected to an output connection means; and an antenna connected to an antenna connection means of the dielectric duplexer.

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