JP2006209971A - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置 Download PDF

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Publication number
JP2006209971A
JP2006209971A JP2006130990A JP2006130990A JP2006209971A JP 2006209971 A JP2006209971 A JP 2006209971A JP 2006130990 A JP2006130990 A JP 2006130990A JP 2006130990 A JP2006130990 A JP 2006130990A JP 2006209971 A JP2006209971 A JP 2006209971A
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JP
Japan
Prior art keywords
data
memory cells
program
error
bit
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Pending
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JP2006130990A
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English (en)
Japanese (ja)
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JP2006209971A5 (enExample
Inventor
Kenshirou Arase
謙士朗 荒瀬
Masanori Noda
昌敬 野田
Hisanobu Sugiyama
寿伸 杉山
Tadahachi Naiki
唯八 内貴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006130990A priority Critical patent/JP2006209971A/ja
Publication of JP2006209971A publication Critical patent/JP2006209971A/ja
Publication of JP2006209971A5 publication Critical patent/JP2006209971A5/ja
Pending legal-status Critical Current

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JP2006130990A 1996-12-03 2006-05-10 半導体不揮発性記憶装置 Pending JP2006209971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006130990A JP2006209971A (ja) 1996-12-03 2006-05-10 半導体不揮発性記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32301196 1996-12-03
JP32429396 1996-12-04
JP2006130990A JP2006209971A (ja) 1996-12-03 2006-05-10 半導体不揮発性記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP05576997A Division JP3941149B2 (ja) 1995-12-04 1997-03-11 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JP2006209971A true JP2006209971A (ja) 2006-08-10
JP2006209971A5 JP2006209971A5 (enExample) 2007-07-26

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ID=36966592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006130990A Pending JP2006209971A (ja) 1996-12-03 2006-05-10 半導体不揮発性記憶装置

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JP (1) JP2006209971A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010500699A (ja) * 2006-08-31 2010-01-07 インテル・コーポレーション メモリデバイス内のセクタごとに許容できるビットエラー
JP2011008913A (ja) * 2007-02-20 2011-01-13 Sandisk Corp 不揮発性記憶装置のための可変書き込み
JP2011123964A (ja) * 2009-12-11 2011-06-23 Toshiba Corp 半導体記憶装置
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
US8427871B2 (en) 2009-08-27 2013-04-23 Samsung Electronics Co., Ltd. Nonvolatile memory device, memory system incorporating same, and method of operating same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010500699A (ja) * 2006-08-31 2010-01-07 インテル・コーポレーション メモリデバイス内のセクタごとに許容できるビットエラー
JP2011008913A (ja) * 2007-02-20 2011-01-13 Sandisk Corp 不揮発性記憶装置のための可変書き込み
US8427871B2 (en) 2009-08-27 2013-04-23 Samsung Electronics Co., Ltd. Nonvolatile memory device, memory system incorporating same, and method of operating same
JP2011123964A (ja) * 2009-12-11 2011-06-23 Toshiba Corp 半導体記憶装置
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置

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