JP2006196655A - Manufacturing method of microstructure - Google Patents

Manufacturing method of microstructure Download PDF

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JP2006196655A
JP2006196655A JP2005006247A JP2005006247A JP2006196655A JP 2006196655 A JP2006196655 A JP 2006196655A JP 2005006247 A JP2005006247 A JP 2005006247A JP 2005006247 A JP2005006247 A JP 2005006247A JP 2006196655 A JP2006196655 A JP 2006196655A
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substrate
fine structure
manufacturing
microstructure
filling
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JP4808971B2 (en
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Norio Sato
昇男 佐藤
Hitoshi Ishii
仁 石井
Junichi Kodate
淳一 小舘
Katsuyuki Machida
克之 町田
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Nippon Telegraph and Telephone Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To uniformly seal a hollow microstructure through formation of a sealing film using a transfer method such as lamination or STP method or the like. <P>SOLUTION: First, a filling structure 103 is formed on a substrate 100 between the adjacent microstructures 110 to fill the periphery of substrate 100a. Almost identical flat surfaces are formed with the upper surface of the microstructure 110 and the upper surface of the filling structure 103. Moreover, since a recess 103a is provided to the filling structure 103, the surface conditions of the planes formed become almost uniform. Thereafter, a sealing film 105 of the uniformed structure is formed, for example, with the STP method on the microstructure 110 and filling structure 103. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、
ＭＥＭＳなどを構成する複数の微細構造体が封止された状態で基板の上に形成された微細構造体の製造方法に関するものである。 The present invention
The present invention relates to a method for manufacturing a fine structure formed on a substrate in a state where a plurality of fine structures constituting a MEMS or the like are sealed.

ＭＥＭＳ（MicroElectro Mechanical System）などに用いられる微細な構造体では、外部から遮断されて封止された空間内に可動する微細な構造体を収容して用いている。また、より低い誘電率を得るために、半導体集積回路では、配線間に封止された空間を設けるようにしている。これらの封止された空間を形成する技術の１つに、ＳＴＰ（Spin-coating film Transfer and hot-Pressing technique）法やラミネーションなどの転写を用いた薄膜形成方法がある。ＳＴＰ法は、フィルムを用いた薄膜形成方法であり、フィルムに塗布形成した膜を減圧された環境の中で熱圧着することにより、膜と基板とを接着させ、この後、膜よりフィルムを剥離することで、膜をフィルムから基板に転写するようにしたものである。   A fine structure used in MEMS (MicroElectro Mechanical System) or the like accommodates and uses a fine structure that moves in a sealed space that is blocked from the outside. In order to obtain a lower dielectric constant, a sealed space is provided between wirings in a semiconductor integrated circuit. One of the techniques for forming these sealed spaces includes a STP (Spin-Coating Film Transfer and Hot-Pressing Technique) method and a thin film forming method using transfer such as lamination. The STP method is a method for forming a thin film using a film. The film applied to the film is thermocompression bonded in a reduced pressure environment to bond the film and the substrate, and then the film is peeled off from the film. By doing so, the film is transferred from the film to the substrate.

また、ラミネーションでは、粘着層をもったフィルムを圧力を加えて基板に貼り付ける技術である。従来の微細な中空構造作製及び封止方法では、まず、犠牲膜の上に天井壁を積層して形成した後、天井壁にエッチング用の微細な貫通孔を形成し、形成した貫通孔を通して犠牲膜をエッチング除去し、天井壁と基板との間に中空構造が形成された状態とする。この後、上述した転写の技術により、天井壁の上に封止膜が形成された状態とすることで、形成された中空構造が封止された状態としていた。前述した薄膜形成の方法を用いれば、空間内部に膜の材料を流入させることなく、比較的大きな貫通孔を封止することが可能となる。   Lamination is a technique in which a film having an adhesive layer is applied to a substrate by applying pressure. In a conventional method for producing and sealing a fine hollow structure, first, a ceiling wall is laminated on a sacrificial film, and then a fine through hole for etching is formed on the ceiling wall, and sacrifice is made through the formed through hole. The film is removed by etching so that a hollow structure is formed between the ceiling wall and the substrate. After that, the formed hollow structure was sealed by setting the sealing film on the ceiling wall by the transfer technique described above. If the above-described thin film forming method is used, it is possible to seal a relatively large through-hole without flowing a film material into the space.

例えば、図７（ａ）の断面図に示すように、配列された複数の中空構造を備えた微細構造１１０１が、基板１１００の上に形成された構造が提案されている(特許文献１参照)。微細構造１１０１は、一体に形成された上部電極１１０３，下部電極１１０４，及び支持電極１１０５から構成されている。また、上部電極１１０３には、中空構造形成のための貫通孔１１０６が形成され、封止膜１１０７により塞がれている。図７（ｂ）の平面図に示すように、正方配列された複数の微細構造セル１１０１ａに渡って、上部電極１１０３は共通に形成され、微細構造セル１１０１ａの中で、４つの角の領域に、４つの貫通孔１１０６が形成されている。図７に示す微細構造では、可撓性を有する上部電極１１０３と下部電極１１０４とにより形成される容量の変化を検出する圧力センサが構成されている。   For example, as shown in the cross-sectional view of FIG. 7A, a structure in which a microstructure 1101 having a plurality of arranged hollow structures is formed on a substrate 1100 has been proposed (see Patent Document 1). . The microstructure 1101 includes an upper electrode 1103, a lower electrode 1104, and a support electrode 1105 that are integrally formed. Further, a through hole 1106 for forming a hollow structure is formed in the upper electrode 1103 and is closed with a sealing film 1107. As shown in the plan view of FIG. 7B, the upper electrode 1103 is formed in common across the plurality of square-structured fine structure cells 1101a, and is formed in four corner regions in the fine structure cell 1101a. Four through holes 1106 are formed. In the fine structure shown in FIG. 7, a pressure sensor for detecting a change in capacitance formed by the flexible upper electrode 1103 and the lower electrode 1104 is configured.

なお、出願人は、本明細書に記載した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を出願時までに発見するには至らなかった。
特許第３５１６９４５号 The applicant has not yet found prior art documents related to the present invention by the time of filing other than the prior art documents specified by the prior art document information described in this specification.
Japanese Patent No. 3516945

しかしながら、上述した転写法により封止膜を形成する場合、微細構造が配置されている領域の境界部分において、封止膜に異常が発生するという問題があった。例えば、上述した複数の微細構造を備えた圧力センサのチップは、複数のチップが配列されたウエハより切り出すことで形成されている。このような場合、１つのチップ領域においては、チップの周辺領域には微細構造を配置しないようにしている。チップの周辺領域は、ウエハより切り出すときの断裁領域に隣接しているため、この領域に微細な構造体が配置されると、断裁時に破損しやすく異物発生の原因となる。このため、一般には、チップ周辺領域には、必要のない構造体（パターン）は、配置しないようにしている。   However, when the sealing film is formed by the transfer method described above, there is a problem that an abnormality occurs in the sealing film at the boundary portion of the region where the fine structure is arranged. For example, a chip of a pressure sensor having a plurality of fine structures described above is formed by cutting out from a wafer on which a plurality of chips are arranged. In such a case, in one chip region, a fine structure is not arranged in the peripheral region of the chip. Since the peripheral area of the chip is adjacent to the cutting area when cutting out from the wafer, if a fine structure is disposed in this area, the chip is easily damaged during cutting and causes foreign matter. For this reason, in general, unnecessary structures (patterns) are not arranged in the chip peripheral region.

このような場合、図８に示すように、チップの周辺領域１１００ａとこれより内側の領域とは、微細構造１１０１の有無により段差のある状態となっている。このような状態の周辺領域１１００ａにおいては、図８（ａ）に示すように、微細構造が形成されていない基板１１００と貼り合わされた封止膜１１０７との間に、間隙が発生する。また、ＳＴＰ法などの転写による封止膜１１０７の形成では、段差の部分では均一な加重が得られないため、例えば図８（ｂ）に示すように、周辺領域１１００ａにおいて、封止膜１１０７が形成されない破断部分が発生する。また、図８（ｃ）に示すように、封止膜１１０７の端部剥がれが発生する。   In such a case, as shown in FIG. 8, the peripheral area 1100a of the chip and the area inside the chip are stepped depending on the presence or absence of the microstructure 1101. In the peripheral region 1100a in such a state, as shown in FIG. 8A, a gap is generated between the substrate 1100 on which the fine structure is not formed and the sealing film 1107 bonded thereto. In addition, in the formation of the sealing film 1107 by transfer such as the STP method, a uniform load cannot be obtained at the stepped portion. Therefore, as shown in FIG. 8B, for example, the sealing film 1107 is formed in the peripheral region 1100a. Broken portions that are not formed are generated. Further, as shown in FIG. 8C, the end portion of the sealing film 1107 is peeled off.

本発明は、以上のような問題点を解消するためになされたものであり、ラミネーションやＳＴＰ法などの転写法を用いた封止膜の形成で、中空微細構造の封止が均一に行えるようにすることを目的とする。   The present invention has been made to solve the above-described problems. By forming a sealing film using a transfer method such as lamination or STP, the hollow fine structure can be uniformly sealed. The purpose is to.

本発明に係る微細構造体の製造方法は、基板の面に対向配置されて貫通孔を備えた天井壁とこの天井壁を基板の上に支持する側壁枠とを備えた複数の微細構造体が、基板の上に配列された状態とする工程と、基板の面に対向する平坦な上面を備えて微細構造体と同一の高さに形成された複数の充填構造体が、微細構造体の間の基板の上に配列された状態とする工程と、充填構造体が配列された後、圧着により、全ての天井壁の上面に、封止膜が形成された状態とする工程とを少なくとも備え、側壁枠と天井壁とに囲まれた領域に封止された空間を備えた状態に微細構造体が形成されるようにしたものである。従って、封止膜が圧着されるときは、貫通孔の部分より大きな段差のない状態となっている。   A method for manufacturing a microstructure according to the present invention includes: a plurality of microstructures including a ceiling wall that is disposed opposite to a surface of a substrate and includes a through hole; and a side wall frame that supports the ceiling wall on the substrate. A plurality of filling structures formed at the same height as the fine structure and having a flat upper surface opposite to the surface of the substrate are arranged between the fine structures. And a step of forming a sealing film on the upper surface of all ceiling walls by pressure bonding after the filling structure is arranged, and The fine structure is formed so as to have a sealed space in a region surrounded by the side wall frame and the ceiling wall. Therefore, when the sealing film is pressure-bonded, there is no level difference larger than the portion of the through hole.

上記微細構造体の製造方法において、充填構造体の上面に凹部を備えるようにしてもよい。このとき、凹部は、貫通孔と平面視で同一の形状に形成され、貫通孔と同一に配列されているとよい。また、充填構造体は、微細構造体の外形と等しい直方体に形成され、平面視で、凹部の合計面積は、貫通孔の合計面積より小さい状態としておくとよい。   In the fine structure manufacturing method, a recess may be provided on the upper surface of the filling structure. At this time, the recesses are preferably formed in the same shape as the through holes in plan view and arranged in the same manner as the through holes. Further, the filling structure is formed in a rectangular parallelepiped that is equal to the outer shape of the fine structure, and the total area of the recesses is preferably smaller than the total area of the through holes in plan view.

上記微細構造体の製造方法において、基板の上に側壁枠が形成された状態とする工程と、側壁枠の内側を充填する犠牲膜が形成された状態とする工程と、犠牲膜及び側壁枠の上に天井壁が形成された状態とする工程と、天井壁の貫通孔を介して犠牲膜を除去する工程とを少なくとも備え、犠牲膜が除去された後、天井壁の上面に、封止膜が形成された状態とすれば、側壁枠と天井壁とに囲まれた領域に封止された空間が得られる。このように形成された微細構造体の内部には、可動部を備えた素子が配置されている。   In the microstructure manufacturing method, a step of forming a side wall frame on the substrate, a step of forming a sacrificial film filling the inside of the side wall frame, a sacrificial film and a side wall frame And a step of removing the sacrificial film through the through-holes in the ceiling wall. After the sacrificial film is removed, a sealing film is formed on the upper surface of the ceiling wall. If the state is formed, a space sealed in a region surrounded by the side wall frame and the ceiling wall can be obtained. Inside the microstructure thus formed, an element having a movable part is arranged.

以上説明したように、本発明によれば、基板の面に対向する平坦な上面を備えて微細構造体と同一の高さに形成された複数の充填構造体が、微細構造体の間の基板の上に配列された状態とし、この後、圧着により、全ての天井壁の上面に封止膜を形成するようにしたので、ラミネーションやＳＴＰ法などの転写法を用いた封止膜の形成で、中空微細構造体の封止が均一に行えるようになるという優れた効果が得られる。   As described above, according to the present invention, a plurality of filling structures having a flat upper surface opposed to the surface of the substrate and formed at the same height as the microstructure are formed between the substrates between the microstructures. After that, the sealing film is formed on the upper surface of all the ceiling walls by pressure bonding, so that the sealing film can be formed by using a transfer method such as lamination or STP method. The excellent effect that the hollow fine structure can be uniformly sealed can be obtained.

以下、本発明の実施の形態について図を参照して説明する。図１は、本発明の実施の形態における微細構造体の製造方法例を説明するための工程図である。まず、図１（ａ）に示すように、基板１００の上に、側壁枠１０１及び天井壁１０２から構成された複数の微細構造体１１０が形成された状態とする。例えば、基板１００の上に、側壁枠１０１が形成された状態とした後、側壁枠１０１により囲われた領域が充填されるように犠牲膜（図示せず）が形成された状態とする。ついで、犠牲膜及び側壁枠１０１の上に貫通孔１０２ａを備えた天井壁１０２が形成された状態とし、この後、貫通孔１０２ａを利用して犠牲膜が除去された状態とすることで、側壁枠１０１及び天井壁１０２に囲われた空間を備えた微細構造体１１０が形成できる。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a process diagram for explaining an example of a manufacturing method of a fine structure according to an embodiment of the present invention. First, as shown in FIG. 1A, a plurality of microstructures 110 including a side wall frame 101 and a ceiling wall 102 are formed on a substrate 100. For example, after the side wall frame 101 is formed on the substrate 100, a sacrificial film (not shown) is formed so as to fill the region surrounded by the side wall frame 101. Then, the ceiling wall 102 provided with the through hole 102a is formed on the sacrificial film and the side wall frame 101, and then the sacrificial film is removed using the through hole 102a. A microstructure 110 having a space surrounded by the frame 101 and the ceiling wall 102 can be formed.

なお、基板１００は、例えば、半導体集積回路が形成されたシリコンウエハ（チップ）であり、図示していない絶縁層が形成されている。また、図１（ａ）に示すように、基板周辺部１００ａには、微細構造体１１０は形成されていない。また、複数の微細構造体１１０は、所定の間隔を開けて配列されている。なお、図１には示していないが、微細構造体１１０の内部空間には、例えば、スイッチなどの可動部を備えたマイクロマシーン（素子）が配置されている。   The substrate 100 is, for example, a silicon wafer (chip) on which a semiconductor integrated circuit is formed, and an insulating layer (not shown) is formed thereon. Further, as shown in FIG. 1A, the microstructure 110 is not formed in the substrate peripheral portion 100a. Further, the plurality of fine structures 110 are arranged with a predetermined interval. Although not shown in FIG. 1, for example, a micromachine (element) including a movable part such as a switch is disposed in the internal space of the fine structure 110.

次に、隣り合う微細構造体１１０の間、及び基板周辺部１００ａを埋めるように、基板１００の上に充填構造体１０３が形成された状態とする（図１（ｂ），（ｃ））。充填構造体１０３は、外形が微細構造体１１０と同一の直方体に形成され、上面に、凹部１０３ａを備える。また、凹部１０３ａは、貫通孔１０２ａと同様の平面形状で同様に配列されている。従って、図１（ｃ）に示すように、基板１００を下方とした場合、微細構造体１１０の上面と充填構造体１０３の上面とにより、ほぼ同一の平面が形成された状態となる。また、充填構造体１０３に凹部１０３ａを備えるようにしたので、形成された面の表面状態が、ほぼ均一な状態となっている。   Next, the filling structure 103 is formed on the substrate 100 so as to fill the space between the adjacent microstructures 110 and the peripheral portion 100a of the substrate (FIGS. 1B and 1C). The filling structure 103 is formed in a rectangular parallelepiped shape that is the same as that of the fine structure 110, and includes a recess 103a on the upper surface. The recesses 103a are similarly arranged in the same planar shape as the through holes 102a. Accordingly, as shown in FIG. 1C, when the substrate 100 is positioned below, substantially the same plane is formed by the upper surface of the microstructure 110 and the upper surface of the filling structure 103. Further, since the filling structure 103 is provided with the recess 103a, the surface state of the formed surface is substantially uniform.

次に、図１（ｄ）に示すように、微細構造体１１０及び充填構造体１０３の上に、例えば、ＳＴＰ法により、一体構造の封止膜１０５が形成された状態とする。ＳＴＰ法について簡単に説明すると、まず、シートフィルムに予め塗布形成した樹脂膜を、減圧環境の中で微細構造体１１０及び充填構造体１０３の上に熱圧着する。ついで、シートフィルムを樹脂膜から剥離し、付けられた樹脂膜を、３００℃の温度で１時間程度保持する熱処理により硬化する。このことにより、微細構造体１１０及び充填構造体１０３上に上記樹脂膜からなる封止膜１０５が形成される。樹脂膜は、例えば、ポリアミド、ポリアミド酸、ポリベンゾオキサゾール（もしくはこの前駆体）などのベース樹脂（ポリイミド）である。   Next, as shown in FIG. 1D, a monolithic sealing film 105 is formed on the fine structure 110 and the filling structure 103 by, for example, the STP method. The STP method will be briefly described. First, a resin film preliminarily applied and formed on a sheet film is thermocompression bonded onto the microstructure 110 and the filling structure 103 in a reduced pressure environment. Next, the sheet film is peeled off from the resin film, and the attached resin film is cured by heat treatment that is held at a temperature of 300 ° C. for about 1 hour. As a result, the sealing film 105 made of the resin film is formed on the fine structure 110 and the filling structure 103. The resin film is, for example, a base resin (polyimide) such as polyamide, polyamic acid, polybenzoxazole (or a precursor thereof).

上述したＳＴＰ法による封止膜１０５の形成において、樹脂膜を熱圧着するときに、周辺領域１００ａにかけて転写面がほぼ平坦な状態となっているため、封止膜１０５は、周辺領域１００ａにおいても、剥がれや破断部分などの発生がない状態に形成される。また、充填構造体１０３の上面に凹部１０３ａを備えるようにしたので、転写面における微細な凹凸の状態が、微細構造体１１０から充填構造体１０３にかけて同様となっている。この結果、封止膜１０５は、全域に渡って同様に加重がかけられた状態に形成され、ほぼ全域に渡って均一な状態に形成される。なお、ＳＴＰ法に限らず、圧着により、全ての天井壁１０２の上面に、封止膜１０５が形成された状態とすればよい。   In the formation of the sealing film 105 by the STP method described above, when the resin film is thermocompression bonded, the transfer surface is almost flat over the peripheral region 100a. Therefore, the sealing film 105 is also formed in the peripheral region 100a. It is formed in a state in which no peeling or breakage occurs. Further, since the concave portion 103 a is provided on the upper surface of the filling structure 103, the fine unevenness on the transfer surface is the same from the fine structure 110 to the filling structure 103. As a result, the sealing film 105 is formed in a state where a load is similarly applied over the entire region, and is formed in a uniform state over substantially the entire region. Note that the sealing film 105 is not limited to the STP method, and the sealing film 105 may be formed on the upper surfaces of all the ceiling walls 102 by pressure bonding.

また、基板１００が、これら複数が配列されたウエハより切り出して形成されるものである場合、基板周辺部１００ａは、ウエハより切り出すときの断裁領域に隣接した状態となる。しかしながら、上述した製造方法によれば、基板周辺部１００ａには、微細構造体１１０が配置されずに、内部空間を持たない充填構造体１０３が配置されているので、断裁においても破損しにくく、異物などが発生しにくい。   Further, when the substrate 100 is formed by cutting out a plurality of these wafers, the substrate peripheral portion 100a is in a state adjacent to the cutting area when cutting out from the wafer. However, according to the manufacturing method described above, the fine structure 110 is not disposed in the substrate peripheral portion 100a, and the filling structure 103 having no internal space is disposed. Foreign matter is less likely to occur.

ところで、図１では、全ての隣り合う微細構造体１１０の間に、充填構造体１０３が配置されているが、これに限るものではない。例えば、図２の平面図に示すように、３行３列に隣接して配列された９個の微細構造体１１０の周囲に、充填構造体１０３が配置されているようにしてもよい。言い換えると、微細構造体１１０の配置されていない領域に、充填構造体１０３が配置されているようにすればよい。また、図２に示した構成例では、９個の微細構造体１１０の集団を１つの微細構造体とすると、微細構造体と充填構造体１０３とは、異なる大きさとなっている。ただし、図２に示す構成例においても、微細構造体と充填構造体とは、同一の高さに形成されている。   By the way, in FIG. 1, the filling structure 103 is arrange | positioned between all the adjacent fine structures 110, However, it is not restricted to this. For example, as shown in the plan view of FIG. 2, the filling structure 103 may be arranged around nine microstructures 110 arranged adjacent to each other in 3 rows and 3 columns. In other words, the filling structure 103 may be arranged in a region where the fine structure 110 is not arranged. In the configuration example shown in FIG. 2, if a group of nine microstructures 110 is a single microstructure, the microstructure and the filling structure 103 have different sizes. However, also in the configuration example shown in FIG. 2, the fine structure and the filling structure are formed at the same height.

また、図３の平面図に示すように、微細構造体１１０が、２つの貫通孔３０２ａ，貫通孔３０２ｂを備えた天井壁３０２から構成されている場合、貫通孔３０２ａ，貫通孔３０２ｂと同様に配置された２つの凹部３０３ａ，凹部３０３ｂを備えた微細構造体３０３を配置すればよい。この場合、凹部３０３ａ，凹部３０３ｂは、貫通孔３０２ａ，貫通孔３０２ｂと同一形状にしなくてもよく、また、凹部３０３ａと凹部３０３ｂとは同一形状であってもよい。   Further, as shown in the plan view of FIG. 3, when the fine structure 110 is constituted by a ceiling wall 302 having two through holes 302a and 302b, it is similar to the through holes 302a and 302b. The microstructure 303 including the two recessed portions 303a and 303b may be disposed. In this case, the recess 303a and the recess 303b may not have the same shape as the through hole 302a and the through hole 302b, and the recess 303a and the recess 303b may have the same shape.

また、図４の平面図に示すように、異なる形態の４つの微細構造体集団が配列されている場合、これらに対応させた４つの充填構造体集団が、隣り合う微細構造体集団の間に配置されていればよい。微細構造体集団は、４つの貫通孔４２１ａを備えた天井壁４２１と、中央部に比較的小さな貫通孔４２２ａを備えた天井壁４２２と、中央部に比較的大きな貫通孔４２３ａを備えた２つの天井壁４２３とから構成されている。また、充填構造体集団は、４つの凹部４３１ａを備えた充填構造体４３１と、中央部に比較的小さな凹部４３２ａを備えた充填構造体４３２と、中央部に比較的大きな凹部４３３ａを備えた２つの充填構造体４３３とから構成されている。なお、基板周辺部１００ａには、中央部に凹部４３４ａを備えた充填構造体４３４が配列されている。   Further, as shown in the plan view of FIG. 4, when four fine structure groups having different forms are arranged, four filling structure groups corresponding to these are arranged between adjacent fine structure groups. It only has to be arranged. The microstructure group includes two ceiling walls 421 having four through holes 421a, a ceiling wall 422 having a relatively small through hole 422a in the center, and two having a relatively large through hole 423a in the center. And a ceiling wall 423. The filling structure group includes a filling structure 431 having four recesses 431a, a filling structure 432 having a relatively small recess 432a in the center, and a relatively large recess 433a in the center. And two filling structures 433. In the substrate peripheral portion 100a, a filling structure 434 having a recess 434a at the center is arranged.

また、図５の平面図に示すように、微細構造体１１０の貫通孔１０２ａとは異なる形態の凹部５０３ａを備えた充填構造体５０３が配置されていてもよい。図５に示す構成例は、図１に示す構成例の充填構造体１０３の代わりに、上面の中央部に凹部５０３ａを備えた充填構造体５０３を用いたものである。同様に、図６の平面図に示すように、４角の凹部６０３ａを備えた充填構造体６０３が、微細構造体１１０の無い箇所に配置されているようにしてもよい。これらの場合、平面視で、１つの天井壁１０２における貫通孔１０２ａの合計面積より、１つの充填構造体における凹部の合計面積の方が小さい状態であればよい。ただし、これらは、ほぼ同一である方が、よりよい。このようにすることで、封止膜１０５を形成するときに、全域に渡って同様に加重がかけられた状態が得られるようになる。   Further, as shown in the plan view of FIG. 5, a filling structure 503 including a recess 503 a having a form different from that of the through hole 102 a of the microstructure 110 may be arranged. The configuration example shown in FIG. 5 uses a filling structure 503 having a recess 503a at the center of the upper surface instead of the filling structure 103 of the configuration example shown in FIG. Similarly, as shown in the plan view of FIG. 6, the filling structure 603 including the four-dimensional recesses 603 a may be arranged at a place where the fine structure 110 is not present. In these cases, the total area of the recesses in one filling structure may be smaller than the total area of the through holes 102a in one ceiling wall 102 in plan view. However, it is better that these are substantially the same. By doing so, when the sealing film 105 is formed, a state in which a weight is similarly applied over the entire region can be obtained.

本発明の実施の形態における微細構造体の製造方法例を説明するための工程図である。It is process drawing for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. 本発明の実施の形態における微細構造体の製造方法例を説明するための途中工程を示す模式的な平面図である。It is a typical top view which shows the middle process for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. 本発明の実施の形態における微細構造体の製造方法例を説明するための途中工程を示す模式的な平面図である。It is a typical top view which shows the middle process for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. 本発明の実施の形態における微細構造体の製造方法例を説明するための途中工程を示す模式的な平面図である。It is a typical top view which shows the middle process for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. 本発明の実施の形態における微細構造体の製造方法例を説明するための途中工程を示す模式的な平面図である。It is a typical top view which shows the middle process for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. 本発明の実施の形態における微細構造体の製造方法例を説明するための途中工程を示す模式的な平面図である。It is a typical top view which shows the middle process for demonstrating the example of the manufacturing method of the microstructure in embodiment of this invention. ＭＥＭＳの構成例を示す断面図（ａ）及び平面図（ｂ）である。It is sectional drawing (a) and a top view (b) which show the structural example of MEMS. ＭＥＭＳの構成例を示す断面図ある。It is sectional drawing which shows the structural example of MEMS.

符号の説明Explanation of symbols

１００…基板、１００ａ…基板周辺部、１０１…側壁枠、１０２…天井壁、１０２ａ…貫通孔、１０３…充填構造体、１０３ａ…凹部、１０５…封止膜、１１０…微細構造体。
DESCRIPTION OF SYMBOLS 100 ... Substrate, 100a ... Peripheral part of substrate, 101 ... Side wall frame, 102 ... Ceiling wall, 102a ... Through-hole, 103 ... Filling structure, 103a ... Recess, 105 ... Sealing film, 110 ... Fine structure.

Claims (6)

基板の面に対向配置されて貫通孔を備えた天井壁とこの天井壁を前記基板の上に支持する側壁枠とを備えた複数の微細構造体が、前記基板の上に配列された状態とする工程と、
前記基板の面に対向する平坦な上面を備えて前記微細構造体と同一の高さに形成された複数の充填構造体が、前記微細構造体の間の前記基板の上に配列された状態とする工程と、
前記充填構造体が配列された後、圧着により、全ての前記天井壁の上面に、封止膜が形成された状態とする工程と
を少なくとも備え、
前記側壁枠と前記天井壁とに囲まれた領域に封止された空間を備える
ことを特徴とする微細構造体の製造方法。 A plurality of microstructures including a ceiling wall disposed opposite to the surface of the substrate and provided with a through-hole, and a side wall frame that supports the ceiling wall on the substrate; And a process of
A plurality of filling structures having a flat upper surface opposed to the surface of the substrate and formed at the same height as the microstructures are arranged on the substrate between the microstructures; And a process of
After the filling structure is arranged, it includes at least a step of forming a sealing film on the upper surface of all the ceiling walls by pressure bonding,
A sealed structure is provided in a region surrounded by the side wall frame and the ceiling wall. 請求項１記載の微細構造体の製造方法において、
前記充填構造体は、上面に凹部を備えることを特徴とする微細構造体の製造方法。 In the manufacturing method of the fine structure according to claim 1,
The filling structure is provided with a concave portion on an upper surface, and the method for manufacturing a fine structure is characterized in that: 請求項２記載の微細構造体の製造方法において、
前記凹部は、前記貫通孔と平面視で同一の形状に形成され、前記貫通孔と同一に配列されている
ことを特徴とする微細構造体の製造方法。 In the manufacturing method of the fine structure according to claim 2,
The concave portion is formed in the same shape as the through hole in plan view, and is arranged in the same manner as the through hole. 請求項２記載の微細構造体の製造方法において、
前記充填構造体は、前記微細構造体の外形と等しい直方体に形成され、
平面視で、前記凹部の合計面積は、前記貫通孔の合計面積より小さい
ことを特徴とする微細構造体の製造方法。 In the manufacturing method of the fine structure according to claim 2,
The filling structure is formed in a rectangular parallelepiped having the same outer shape as the microstructure.
The method for manufacturing a fine structure, wherein the total area of the recesses is smaller than the total area of the through holes in a plan view. 請求項１〜４のいずれか１項に記載の微細構造体の製造方法において、
前記基板の上に前記側壁枠が形成された状態とする工程と、
前記側壁枠の内側を充填する犠牲膜が形成された状態とする工程と、
前記犠牲膜及び前記側壁枠の上に前記天井壁が形成された状態とする工程と、
前記天井壁の貫通孔を介して前記犠牲膜を除去する工程と
を少なくとも備え、
前記犠牲膜が除去された後、前記天井壁の上面に、前記封止膜が形成された状態とする
ことを特徴とする微細構造体の製造方法。 In the manufacturing method of the microstructure according to any one of claims 1 to 4,
A step of forming the side wall frame on the substrate;
A step of forming a sacrificial film filling the inside of the side wall frame;
A step of forming the ceiling wall on the sacrificial film and the side wall frame;
And removing at least the sacrificial film through the through hole in the ceiling wall,
After the sacrificial film is removed, the sealing film is formed on the top surface of the ceiling wall. 請求項１〜５のいずれか１項に記載の微細構造体の製造方法において、
前記微細構造体の内部に可動部を備えた素子が配置されている
ことを特徴とする微細構造体の製造方法。
In the manufacturing method of the fine structure according to any one of claims 1 to 5,
An element having a movable part is disposed inside the fine structure. A method for producing a fine structure, wherein:
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JP2012182481A (en) * 2012-05-07 2012-09-20 Fujikura Ltd Semiconductor package and method for manufacturing the same
JP2013045893A (en) * 2011-08-24 2013-03-04 Seiko Epson Corp Electronic apparatus, manufacturing method of the same, and oscillator

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Publication number Priority date Publication date Assignee Title
JP2002328004A (en) * 2001-01-31 2002-11-15 Nippon Telegr & Teleph Corp <Ntt> Sensor for recognizing shape of surface and its manufacturing method
JP2002365153A (en) * 2001-06-06 2002-12-18 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing fine structure
JP2004255487A (en) * 2003-02-25 2004-09-16 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of mems

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JP2002328004A (en) * 2001-01-31 2002-11-15 Nippon Telegr & Teleph Corp <Ntt> Sensor for recognizing shape of surface and its manufacturing method
JP2002365153A (en) * 2001-06-06 2002-12-18 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing fine structure
JP2004255487A (en) * 2003-02-25 2004-09-16 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of mems

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Publication number Priority date Publication date Assignee Title
JP2013045893A (en) * 2011-08-24 2013-03-04 Seiko Epson Corp Electronic apparatus, manufacturing method of the same, and oscillator
JP2012182481A (en) * 2012-05-07 2012-09-20 Fujikura Ltd Semiconductor package and method for manufacturing the same

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