JP2002328004A - Sensor for recognizing shape of surface and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sensor for recognizing a shape of surface capable of detecting the shape such as a fingerprint or the like with high sensitivity. SOLUTION: An upper electrode 110a is movably formed, and a photosensitive resin layer 301 is coated thereon, and a pattern is formed by exposing and developing a prescribed pattern thereon, and then a heat treating process is carried out for thermosetting at 300 deg.C and for 30 minutes. Then, a protective layer having plural projections 311a at a region on a lower electrode 104a is formed so as to cover the upper electrode 110a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface shape recognizing sensor used for detecting a surface shape having minute irregularities such as a human fingerprint or an animal nose pattern, and a method of manufacturing the same.

[0002]

2. Description of the Related Art With the progress of the information society and the environment of the modern society, interest in security technology is increasing.
For example, in the information-oriented society, personal authentication technology for system construction such as electronic cashing is an important key. In addition, research and development on authentication technologies to prevent theft and unauthorized use of credit cards are being actively conducted (for example, Yoshimasa Shimizu et al.,
Study on IC card with personal authentication function, IEICE Technical Report of IEICE OFS92-32, P25 30 (199
2)).

[0003] There are various authentication methods such as fingerprint and voice.
Above all, many technologies have been developed for fingerprint authentication technology. Fingerprint authentication methods are broadly classified into an optical reading method and a method of using human electrical characteristics and detecting unevenness of a fingerprint and replacing it with an electric signal. The optical reading method is a method of reading fingerprint data mainly by using light reflection and an image sensor (CCD) and performing collation (for example, Seigo Igaki et al., Personal collation method and apparatus, Japanese Patent Application Laid-Open No. 61-1986). 221883 publication). In addition, a method of reading a pressure difference due to unevenness of a fingerprint using a piezoelectric thin film has also been developed (for example, Masanori Sumihara et al., Fingerprint Sensor, JP-A-5-61965).

[0004] Further, an authentication method for detecting a fingerprint by detecting a change in resistance or detecting a change in capacitance using a pressure-sensitive sheet, thereby replacing a change in electrical characteristics caused by contact with the skin with a distribution of electric signals. (For example, Kazuhiro Hemi et al., Surface Shape Sensor, Individual Authenticator and Activated System Using It, JP-A-7-168)
930).

However, in the above-described conventional techniques, first, the optical reading method is difficult to miniaturize and general-purpose, and its application is limited. Further, in the method of detecting the unevenness of the fingerprint using a pressure-sensitive sheet or the like, it is conceivable that the material is special and the workability is difficult, so that it is difficult to put into practical use and the reliability is poor.

On the other hand, "Marco Tartagni" and others have developed a capacitive fingerprint sensor using LSI manufacturing technology (Marco Tartagni).
Tartagni and Robert Guerrieri, A 390 dpi Live Finge
rprint Imager Based on Feedback Capacitive Sensin
g Scheme, 1997 IEEE International Solid-State Circuit
its Conference, p200 201 (1997)). This fingerprint sensor uses a feedback capacitance method to detect a skin uneven pattern using a sensor chip in which small capacitance detection sensors are two-dimensionally arranged on an LSI.

The above capacitance detection sensor is formed by forming two plates on the uppermost layer of an LSI and forming a passivation film thereon. In this capacitance detection sensor,
The surface of the skin functions as a third plate, is isolated by an insulating layer made of air, and detects a fingerprint by performing sensing at this difference in distance. The fingerprint authentication system using this structure is characterized in that a special interface is not required and the size can be reduced as compared with the conventional optical system.

[0008] In principle, a fingerprint sensor using a capacitance detection sensor has a lower electrode formed on a semiconductor substrate and a passivation film formed thereon, and the fingerprint sensor is formed by the skin and the lower electrode via the passivation film. Detect capacity,
This is a method for detecting fine irregularities on a fingerprint. As shown in FIG. 21, the capacitance detection sensor includes a lower electrode 2102 formed on a semiconductor substrate 2101 via an interlayer insulating film 2101a, and a passivation film 2103 covering the lower electrode 2102.

The fingerprint sensor chip has a plurality of capacitance detection sensors arranged in a matrix on a semiconductor substrate 2101. Although not shown in FIG. 21, the interlayer insulating film 2
On the semiconductor substrate 2101 below the semiconductor substrate 101a, for example, an integrated circuit having a plurality of MOS transistors and a wiring structure is formed. The lower electrode 2102 is connected to the integrated circuit by a wiring (not shown), and a plurality of lower electrodes 2102 are connected.
Is detected and output by a detection circuit or the like formed in the integrated circuit.

In this sensor chip, when a finger to be detected as a fingerprint contacts the passivation film 2103, on each lower electrode 2102, the skin that has touched the passivation film 2103 functions as an electrode. Form capacitance. The formed capacitance is detected by the detection circuit via a wiring connected to the lower electrode 2102 (not shown).

Here, since the fingerprint is formed by the unevenness of the skin, the distance between the skin as an electrode in contact with the passivation film 2103 and each lower electrode 2102 is equal to the distance between the convex portion forming the fingerprint and the lower electrode 2102. Differs with recesses. This difference in distance is detected as a difference in capacitance. If a distribution of different capacitances from the respective lower electrodes 2102 is detected, a fingerprint pattern is obtained. As described above, the sensor chip using the capacitance detection sensor is a surface shape recognition sensor that can detect minute irregularities on the skin.

However, in the above-described sensor chip using the capacitance detection sensor, since the skin is an electrode, static electricity generated at a fingertip causes electrostatic damage to an integrated circuit such as a sensor circuit built in the sensor chip. There was a problem that it easily occurred. On the other hand, in order to prevent electrostatic destruction of the above-mentioned capacitance type fingerprint sensor, a surface shape recognition sensor provided with a capacitance detection sensor having a sectional structure as shown in FIG. 22 has been proposed. The sensor shown in FIG. 22 will be described.
A lower electrode 2203 formed through the lower electrode 202, a deformable plate-shaped upper electrode 2204 arranged at a predetermined distance from the lower electrode 2203, and a lower electrode 2203 around the lower electrode 2203. And a support member 2205 for supporting the upper electrode 2204.

In the sensor configured as described above, when a finger to be subjected to fingerprint detection comes into contact with the upper electrode 2204, pressure from the finger deflects the upper electrode 2204 toward the lower electrode 2203, and a gap between the lower electrode 2203 and the upper electrode 2204. Change the capacitance formed on the substrate. This change in capacitance is
Detection is performed by a detection circuit (not shown) on the semiconductor substrate 2201 via a wiring (not shown) connected to the lower electrode 2203. In this surface shape recognition sensor, if the upper electrode 2204 is grounded via the conductive support member 2205, even if the static electricity generated at the fingertip is discharged to the upper electrode 2204, the support member 22
Flow to ground via 05. For this reason, the lower electrode 22
The detection circuit built in under 03 is protected from electrostatic destruction.

[0014]

However, the above-mentioned conventional fingerprint sensor has a problem that a desired high sensitivity is not obtained. For example, in the fingerprint sensor having the configuration shown in FIG. 21, since the sensitivity greatly changes depending on the state of the surface of the finger, it is not easy to obtain high sensitivity. Further, the fingerprint sensor having the configuration shown in FIG. 22 has a problem that a large change in the upper electrode cannot be obtained, and high sensitivity cannot be obtained.

The present invention has been made to solve the above problems, and has as its object to provide a surface shape recognition sensor capable of detecting a shape of a fingerprint or the like with higher sensitivity.

[0016]

According to one aspect of the present invention, there is provided a sensor for recognizing a surface shape, comprising: a lower electrode which is insulated and separated from each other on the same plane of an interlayer insulating film formed on a semiconductor substrate; And a plurality of capacitance detecting elements formed of a deformable plate-shaped upper electrode made of a metal having a plurality of openings and arranged at predetermined intervals on the lower electrode, and a lower electrode around the lower electrode A support member that is disposed insulated and separated from the lower electrode and supports the upper electrode, a protective film that is disposed on the upper electrode to cover the opening, and that detects the capacitance of the protective film. And a plurality of projection-like structures arranged in a region on the element. According to the surface shape recognition sensor, since the plurality of protrusion-like structures are provided, for example, the probability that one upper electrode changes is increased.

According to another aspect of the present invention, there is provided a sensor for recognizing a surface shape, comprising: a lower electrode which is insulated and separated from each other on the same plane of an interlayer insulating film formed on a semiconductor substrate; A plurality of capacitance detecting elements, each composed of a deformable plate-shaped upper electrode made of a metal having a plurality of openings and arranged at predetermined intervals on the electrode, are insulated from the lower electrode around the lower electrode. A support member that is separately disposed and is formed higher than the lower electrode to support the upper electrode; a protective film that is disposed on the upper electrode and formed to cover the opening; And a protruding structure made of metal disposed in the region. According to this surface shape recognition sensor, since the protruding structure is made of a metal having high mechanical strength and easy to process, for example, a higher and thinner electrode structure can be formed. Even if the amount is increased and the surface of the object to be measured has poor rigidity, it is possible to prevent the protruding structures from being buried in them, and it is possible to perform detection that more reflects the surface shape of the object to be measured.

According to one embodiment of the present invention, there is provided a method of manufacturing a sensor for recognizing a surface shape, comprising the steps of: forming an interlayer insulating film on a semiconductor substrate; forming a first metal film on the interlayer insulating film; A first portion having an opening in a predetermined region on the metal film;
Forming the first mask pattern, forming the first metal pattern on the surface of the first metal film exposed at the bottom of the opening of the first mask pattern by plating, and removing the first mask pattern. Forming a second mask pattern having an opening disposed around the first metal pattern on the first metal film and the first metal pattern; and forming an opening in the second mask pattern. Forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed at the bottom by plating, and removing the first metal pattern and the second metal pattern after removing the second mask pattern. The first metal film is removed by etching using the first metal film as a mask, and a lower electrode made of the first metal film and the first metal pattern and a support made of the first metal film and the second metal pattern are removed. Forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the support member; and an upper electrode having a plurality of openings on the sacrificial film and the support member. Forming the upper electrode, selectively removing only the sacrificial film through the opening after forming the upper electrode, and forming a protective film on the upper electrode after removing the sacrificial film. Forming a photosensitive resin film having photosensitivity on the protective film, and exposing and developing a predetermined pattern on the photosensitive resin film to form a plurality of protrusions on the region of the protective film on the capacitance detecting element. Forming a structure, and forming a plurality of capacitance detecting elements composed of a lower electrode and an upper electrode.

In another aspect of the present invention, there is provided a method of manufacturing a sensor for recognizing a surface shape, comprising the steps of: forming an interlayer insulating film on a semiconductor substrate; forming a first metal film on the interlayer insulating film; Forming a first mask pattern having an opening in a predetermined region on the first metal film; and plating the first metal film surface exposed at the bottom of the opening of the first mask pattern by plating. Forming a first metal pattern;
Forming a second mask pattern having an opening disposed around the first metal pattern on the first metal film and the first metal pattern after removing the first mask pattern; Forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed at the bottom of the opening of the second mask pattern by plating, and after removing the second mask pattern, The first metal film is etched away using the first metal pattern and the second metal pattern as a mask, and the lower electrode including the first metal film and the first metal pattern, the first metal film, and the second metal Forming a supporting member comprising a pattern; forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the supporting member; and forming a plurality of openings on the sacrificial film and the supporting member. Forming an upper electrode having,
After forming the upper electrode, a step of selectively removing only the sacrificial film through the opening, and after removing the sacrificial film, a step of forming a photosensitive resin film having photosensitivity on the upper electrode By exposing and developing a predetermined pattern on the photosensitive resin film, a protective film covering the upper electrode and a plurality of projecting structures arranged in a region of the protective film on the capacitance detecting element are formed at the same time. And forming a plurality of capacitance detecting elements composed of a lower electrode and an upper electrode.

According to another aspect of the present invention, there is provided a method of manufacturing a sensor for recognizing a surface shape, comprising the steps of: forming an interlayer insulating film on a semiconductor substrate; forming a first metal film on the interlayer insulating film; Forming a first mask pattern having an opening in a predetermined region on the first metal film; and plating the first metal film surface exposed at the bottom of the opening of the first mask pattern by plating. Forming a first metal pattern;
Forming a second mask pattern having an opening disposed around the first metal pattern on the first metal film and the first metal pattern after removing the first mask pattern; Forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed at the bottom of the opening of the second mask pattern by plating, and after removing the second mask pattern, The first metal film is etched away using the first metal pattern and the second metal pattern as a mask, and the lower electrode including the first metal film and the first metal pattern, the first metal film, and the second metal Forming a supporting member comprising a pattern; forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the supporting member; and forming a plurality of openings on the sacrificial film and the supporting member. Forming an upper electrode having,
A step of selectively removing only the sacrificial film through the opening after forming the upper electrode; a step of forming a protective film on the upper electrode after removing the sacrificial film; Forming a second metal film, forming a third mask pattern having an opening in a predetermined region on the second metal film, and forming a third mask pattern exposed at the bottom of the opening of the third mask pattern. 2
Forming a third metal pattern on the surface of the metal film by a plating method, removing the third mask pattern, etching away the second metal film using the third metal pattern as a mask, Forming a protruding structure composed of a metal film and a third metal pattern, so as to form a plurality of capacitance detecting elements each composed of a lower electrode and an upper electrode.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. <First Embodiment> FIGS. 1 to 3 are process diagrams illustrating a method of manufacturing a surface shape recognition sensor according to an embodiment of the present invention. Hereinafter, the manufacturing method will be described with reference to FIGS. First, as shown in FIG. 1A, an interlayer insulating film 101a is formed on a substrate 101 made of a semiconductor material such as silicon. Although not shown, another integrated circuit such as a detection circuit is formed on the substrate 101 below the interlayer insulating film 101a, and has a wiring structure including a plurality of wirings.

After forming the interlayer insulating film 101a, first,
A titanium film having a thickness of 0.1 μm and a thickness of 0.
A seed layer (first metal film) 102 composed of a two-layer film of a 1-μm gold film is formed. Next, as shown in FIG. 1B, a film thickness 5 having an opening 103a on the seed layer 102 is formed.
μm resist pattern (first mask pattern)
103 is formed. The resist pattern 103 is formed by a known photolithography technique. After the resist pattern 103 is formed, a metal pattern (first metal pattern) 104 made of a gold plating film is formed to a thickness of about 1 μm on the seed layer 102 exposed in the opening 103a by an electrolytic plating method. .

Next, after removing the resist pattern 103, as shown in FIG. 1C, a new opening 105a is formed.
Is formed with a resist pattern (second mask pattern) 105 having a thickness of about 5 μm. At this time, the metal pattern 104 is covered with the resist pattern 105. After forming the resist pattern 105, the opening 1
A metal pattern (second metal pattern) 106 made of a gold plating film is formed on the seed layer 102 exposed at 05a.
Is formed to a thickness of about 3 μm by electrolytic plating.

Next, after removing the resist pattern 105, the seed layer 102 is selectively etched using the metal pattern 104 and the metal pattern 106 as a mask. In this etching, first, an etching solution composed of iodine, ammonium iodide, water, and ethanol is used.
Gold on the seed layer 102 is selectively removed. Then
Using an HF-based etchant, titanium under the seed layer 102 is selectively removed. In the wet etching of gold, the etching rate is 0.05 μm per minute.

As a result, as shown in FIG. 1D, on the substrate 101, a lower electrode 104a whose upper layer is made of gold, and a supporting member 106 which is insulated and separated from the lower electrode 104a.
a is formed. The support member 106a supports an upper electrode, which will be described later, and is formed on the substrate 101 in a lattice shape, for example, as shown in the plan view of FIG. In addition, a plurality of lower electrodes 104a are arranged at the center of a region surrounded by the lattice-shaped support member 106a.

In a region where one lower electrode 104a and the lower electrode 104 surrounded by the grid-like support member 106a are arranged, one sensor cell (capacitance detecting element) is formed. Note that the shape of the support member 106a is not limited to a lattice shape. For example, a plurality of support members each having a square pillar with a bottom surface may be arranged around the lower electrode 104a (for example, on an extension of the four corners).

Next, as shown in FIG. 1E, a photosensitive resin film 107 is formed on the substrate 101 by spin coating so as to cover the lower electrode 104a and the support member 106a. The resin film 107 has a positive photosensitivity, and is obtained by adding a positive photosensitizer to a base resin (polyimide) such as polyamide, polyamic acid, or polybenzoxazole (or a precursor thereof).

The formed resin film 107 is subjected to a heat treatment (pre-bake) by placing the substrate 101 on a hot plate at about 120 ° C. for about 4 minutes. Then
The support member 106 is formed by a known photolithography technique.
Exposure is performed on the upper region a and the subsequent development process is performed, so that the opening 107a exposing the upper portion of the support member 106a is formed in the resin film 107, as shown in FIG. I do. After the development processing, about 3
A heat treatment at a temperature of 10 ° C. is performed to thermally cure the resin film 107.

Next, the cured resin film 107 is etched back by chemical mechanical polishing to form a sacrifice film 117 having a flattened surface as shown in FIG. At this stage, the upper surface of the support member 106a and the surface of the sacrificial film 117 are substantially the same plane, and the upper surface of the support member 106a is exposed. Next, as shown in FIG. 2B, a titanium film having a thickness of 0.1 μm and a gold film having a thickness of 0.1 μm are formed on the sacrificial film 117 having been flattened and exposing the upper surface of the support member 106 a by vapor deposition or the like. A seed layer 108 composed of a two-layer film is formed.

Next, as shown in FIG. 2C, a resist pattern 109 having a mesh-shaped opening region is formed, and electrolytic plating is performed on the seed layer 108 exposed in a region where the resist pattern 109 does not exist. A metal film 110 made of a gold plating film is formed to a thickness of about 0.4 μm by a method. The metal film 110 is formed in a mesh shape. Next, after removing the resist pattern 109, the seed layer 108 is selectively etched away using the formed metal film 110 as a mask.

In this etching, first, gold in the upper layer of the seed layer 108 is selectively removed using an etching solution containing iodine, ammonium iodide, water, and ethanol.
Next, using an HF-based etchant, the seed layer 108 is formed.
The lower titanium layer is selectively removed. In the wet etching of gold, the etching rate is 0.05 μm per minute.

As a result, as shown in FIG. 2D, a mesh-shaped upper electrode 110a having a plurality of openings is formed. The upper electrode 110a is integrally formed over a plurality of sensor cells.

Next, the substrate 101 formed up to the upper electrode 110a is exposed to a plasma mainly containing oxygen gas.
The etching species generated by the plasma are transferred to the upper electrode 1
The sacrifice film 117 is removed by contacting the sacrifice film 117 through the opening 10a. As a result, as shown in FIG. 2E, a space is formed below the upper electrode 110a in a state where the upper electrode 110a is supported by the support member 106a, and the upper electrode 110a and the lower electrode 104a are The separated structure is formed.

Next, as shown in FIG. 3A, a photosensitive resin film 301 (film thickness: 10 μm) of a sheet film 302 on which a photosensitive resin film 301 made of photosensitive polyimide was formed. The surface is bonded onto the upper electrode 110a. The photosensitive resin film 301 is previously formed on the sheet film 302 by spin coating or the like. In order to attach the sheet film 302, the substrate 101
Is placed in a container evacuated to a predetermined degree of vacuum, a load is applied between the substrate 101 and the sheet film 302,
Further, by applying a temperature from the sheet film 302, the photosensitive resin film 301 is heated, so that the photosensitive resin film 301 is adhered to the upper electrode 110a.

The degree of vacuum was about 1.3 × 10 ³ Pa, the load was 5 kg, the heating temperature was 150 ° C., and the load and heating were applied for about 1 minute. After this, the upper electrode 1
The sheet film 302 is peeled off from the photosensitive resin film 301 adhered to 10a, and as shown in FIG. 3B, a state in which a 10 μm-thick photosensitive resin film 301 is formed (transferred) on the upper electrode 110a. I do. The formation of the photosensitive resin film 301 by the bonding described above is performed by STP (Spin coa
ting film Transfer and hot Pressing). The formation of the photosensitive resin film 301 on the sheet film 302 is not limited to the spin coating, and another coating method may be used.

Next, a predetermined pattern is exposed on the photosensitive resin film 301 formed on the upper electrode 110a, and is developed to form a pattern, which is thermally cured by heating at 300 ° C. for 30 minutes. As shown in FIG. 3 (c), the lower electrode 1
A plurality of projections (projection-like structures) 31
The protective film 311 having 1a is formed to cover the upper electrode 110a. By adjusting the amount of exposure or the amount of development (time), the protrusion 311a can be formed with the protective film 311 remaining below.

FIG. 3 formed by the above description.
In the surface shape recognition sensor of which part (one sensor cell) is shown in (c), when the tip of the finger contacts the projection 311a, the projection 311a is pushed downward according to the fingerprint shape of the contacted finger. The upper electrode 110a is deformed, and the capacitance formed by the upper electrode 110a and the lower electrode 104a changes. Each lower electrode 104a corresponding to this fingerprint shape
If the shading data is added according to the change in the capacitance formed above (the sensor cell), the shape of the fingerprint can be reproduced.

In this embodiment, since one sensor cell is provided with a plurality of projections 311a,
For example, the sensitivity can be expected to improve due to an increase in the probability that the upper electrode 110a of one sensor cell changes due to contact with an object, as compared to the case where one projection is formed on one sensor cell. Become like

The detection of the capacitance in the sensor cell due to the deformation of the upper electrode 110a and the conversion to the grayscale data are performed by an integrated circuit (not shown) formed on the substrate 101, for example. Here, for example, FIG.
As shown in (c), the upper electrode 110a is connected to the protection circuit 3
If the static electricity generated on the target object is discharged to the upper electrode 110a, the static electricity flows to the ground via the protection circuit 321 if it is grounded via the component 21 or the like. As described above, by connecting the upper electrode 110a to the ground, the integrated circuit can be protected from electrostatic breakdown.

Second Embodiment Next, another embodiment of the present invention will be described. In the above embodiment, the upper electrode 1
The protective film 311 and the plurality of protrusions 311a are formed at the same time by processing the resin film transferred on the 10a. However, as described below, these may be formed separately.

First, as shown in FIGS. 1A to 2E, a lower electrode 104a, a support member 106a and a mesh-like upper portion supported by the lower electrode 104a are provided on a substrate 101 (interlayer insulating film 101a). The electrode 110a is formed. Next, as shown in FIG. 4A, a polyimide resin film is transferred onto the upper electrode 110a by the above-described STP method, and is thermally cured by a heat treatment at 300 ° C. for 30 minutes to form a film made of a polyimide resin. A protective film 401 having a thickness of 1 μm is formed.

Next, a photosensitive polyimide is applied on the protective film 401, and as shown in FIG.
m of the photosensitive resin film 402 is formed. The formed photosensitive resin film 402 is subjected to a heat treatment (pre-bake) by placing the substrate 101 on a hot plate at about 120 ° C. for about 4 minutes. Next, exposure is performed on a region other than the region where the projection is desired to be formed by a known photolithography technique, and subsequently, a development process is performed.
As shown in (c), the protruding structure 4 is formed on the protective film 401.
02a is formed. After the development process, a heat treatment at a temperature of about 300 ° C.
The protruding structure 402a is thermally cured.

In the above description, the protective film is formed on the upper electrode 110a by a bonding transfer method such as the STP method. However, the present invention is not limited to this. For example, any method, such as a CVD (Chemical Vapor Deposition) method or a coating method, may be used as long as a protective film can be formed on the upper electrode 110a with the plurality of openings of the upper electrode 110a closed.

Third Embodiment Next, another embodiment of the present invention will be described. In the present embodiment, a protruding structure made of metal is provided on the upper electrode. This manufacturing method will be described below. First, FIG.
As shown in FIGS. 2A to 2E, a lower electrode 104a and a support member 1 are formed on a substrate 101 (interlayer insulating film 101a).
06a and mesh-shaped upper electrode 1 supported by the same
10a is formed.

Next, as shown in FIG. 5A, a 1 μm-thick protective film 501 made of a polyimide resin is formed on the upper electrode 110a by the above-described STP method. The conditions for the transfer were a vacuum of about 1.3 × 10 ³ Pa and a load of 5 k.
g, a heating temperature of 150 ° C., and a load and heating are applied for about 1 minute. Next, a titanium film having a thickness of 0.1 μm and a film thickness of 0.1 μm are formed on the protective film 501 by, for example, an evaporation method.
A seed layer (second metal film) 502 composed of a two-layer film of a 1 μm gold film is formed.

Next, as shown in FIG. 5B, an opening (third mask pattern) 503 a is formed on the seed layer 502.
Is formed with a thickness of about 30 μm. The resist pattern 503 is formed by a known photolithography technique. Resist pattern 50
After the formation of No. 3, a metal pattern (third metal pattern) 504 made of a gold plating film is formed to a thickness of about 20 μm on the seed layer 502 exposed in the opening 503a by an electrolytic plating method.

After removing the resist pattern 503, the seed layer 502 is selectively etched using the metal pattern 504 as a mask. In this etching, first, gold in the upper layer of the seed layer 502 is selectively removed using an etching solution containing iodine, ammonium iodide, water, and ethanol. Next, titanium under the seed layer 502 is selectively removed using an HF-based etchant. In the case of wet etching of gold, the etching rate is set at 0.1 / min.
05 μm.

As a result, as shown in FIG. 5C, a protruding structure 504a whose upper layer is made of gold is formed in a region above the lower electrode 104a on the protective film 501. As described above, in the present embodiment, since the protruding structure 504a is made of metal, the surface shape recognition sensor can be made to have high mechanical strength, and the sensitivity can be improved. Further, since the projecting structure is formed by the plating method, a higher projecting structure can be obtained than forming the projecting structure from a resin as in the above-described embodiment. As for the point, the sensitivity when contacting the object can be increased.

Incidentally, a plurality of protruding structures made of metal may be provided in one sensor cell. As shown in FIG. 6A, a resist pattern 603 having a thickness of about 30 μm and having a plurality of openings 603a is formed on the seed layer 502, and is formed on the seed layer 502 exposed to the plurality of openings 603a. A metal pattern 604 made of a gold plating film is formed to a thickness of about 20 μm by electrolytic plating.

After removing the resist pattern 603 and selectively etching the seed layer 502 using the metal pattern 604 as a mask, as shown in FIG. 6B, a region above the lower electrode 104a on the protective film 501 is formed. Next, a plurality of protruding structures 604a whose upper layer is made of gold are formed in one sensor cell. According to the present embodiment, since the protruding structure is made of a metal having high mechanical strength and easy to process, for example, a higher and thinner electrode structure can be formed. It can be increased and the probability of contact with the measurement object can be increased.

<Embodiment 4> By the way, in the above-described embodiment, as shown in FIGS. 2 (d) and 2 (e),
The upper electrode 110 is exposed to plasma mainly containing oxygen gas.
The sacrificial film 117 is removed through the opening a. As the plasma mainly containing oxygen gas, for example, plasma of a mixed gas of CF ₄ and oxygen gas may be used. . However, in such dry etching, a polymer is newly formed due to the plasma of the mixed gas.
For this reason, there is a problem that a residue formed by etching is formed in the formed space such that the polymer adheres to the lower surface of the upper electrode 110a and the upper surface of the lower electrode 104a, and a desired space cannot be realized.

In the above-mentioned dry etching, since the plasma of the oxygen gas is used, the metal constituting the upper electrode 110a and the lower electrode 104a is oxidized and deteriorated, and, for example, the conductivity is lowered. was there. This is to increase the space formed under the upper electrode,
When a thick sacrificial film is used, the processing time by oxygen plasma becomes longer, which causes a more significant problem.

Therefore, in the steps shown in FIGS. 2D and 2E, the sacrificial film 117 may be removed as follows. First, the substrate 101 on which the upper electrode 110a is formed is heated to, for example, 250 to 300 [deg.] C. in an ozone atmosphere so that ozone is brought into contact with the sacrificial film 117 through the plurality of openings of the upper electrode 110a. 117 is removed. As a result, as shown in FIG. 2E, in a state where the upper electrode 110a is supported by the support member 106a, a space is formed below the upper electrode 110a, and the upper electrode 110a is formed.
a and the lower electrode 104a are formed in a fine structure in a state where they are separated from each other by a space. Upper electrode 110a and lower electrode 10
4a is spaced apart from the space, so that
For example, air has a very low dielectric constant. If the upper electrode 110a is deformable, the upper electrode 110a can be moved.

As described above, according to the present embodiment, when removing the sacrificial film under the upper electrode 110a, plasma is not used, so that damage to the upper electrode 110a can be suppressed to a low level. Further, since the sacrificial film 117, which is a resin, is ashed using ozone, a polymer is not generated unlike the case where plasma is used, and the sacrificial film 117 can be removed without any residue.

<Embodiment 5> In the above-described embodiment, the protective film is formed on the upper electrode by bonding and transferring the resin film formed on the sheet film. It is not limited to. As shown below, a protective film may be formed by coating. First, as described with reference to FIG. 2B, the seed layer 108 is formed on the sacrificial film 117 exposing the upper surface of the support member 106a, and the columnar resist pattern 7 is formed thereon.
9 is formed, and as shown in FIG. 7A, a metal film 7 made of a gold plating film is formed on the seed layer 108 exposed in a region where there is no resist pattern 709 by an electrolytic plating method.
10 is formed to a film thickness of about 0.4 μm.

After removing the resist pattern 709, the seed layer 108 is selectively etched away using the formed metal film 110 as a mask, thereby forming a plurality of openings 709a as shown in FIG. Upper electrode 710 provided
a is formed. The opening 709a is separated from the supporting member 106a forming portion, as shown in the plan view of FIG.
In addition, the state is arranged outside the region on the lower electrode 104a. In the present embodiment, the opening 709a has a circular shape in plan view having a diameter of 4 μm, and is arranged at a distance of 8 μm from the inner end of the support member 106a.

Next, by removing the sacrificial film 117 through the opening of the upper electrode 710a, the upper electrode 710a is supported by the support member 106a as shown in FIG. A space is formed below 710a,
The upper electrode 710a and the lower electrode 104a form a structure separated from each other by a space.

Next, as shown in FIG. 8A, a protective film (coating film) 801 is formed on the upper electrode 710a by spin-coating an organic polymer resin. As the organic polymer resin, those having poor wettability to the gold plating film are preferable. For example, polybenzoxazole (or a precursor thereof) is used. As the resin based on polybenzoxazole, for example, “CRC8300” manufactured by Sumitomo Bakelite Co., Ltd. is available. For example,
By spin-coating the polybenzoxazole resin in a state where the substrate 101 is rotated at 7000 rpm for 12 seconds, a protective film 801 having a thickness of 1 μm can be formed. The resin is not limited to the organic polymer resin, and another resin having a high viscosity may be used.

After forming the protective film 801 in this manner, as shown in FIG. 8B, the surface on which the protective film 801 is formed is immediately turned down, and the substrate 101 is heated at 120 ° C. (10 minutes). By this heating, the solvent component of the protective film 801 is evaporated, and the fluidity of the protective film 801 is reduced. In this manner, by disposing the applied protective film 801 on the lower side, that is, on the side on which gravity acts, it is possible to prevent the protective film 801 from entering the space below the upper electrode 710a from the opening 709a of the upper electrode 710a. Suppress.

The requirement here is that the protective film 801 must be
01 and the upper electrode 710a on the side where force (gravity) acts. In other words, the upper electrode 710a does not exist in the direction of the force acting on the applied protective film 801. As described below, the wettability of the material of the protective film 801 to be applied to the upper electrode 710a is not good, and the surface tension of the material to be applied that has reached the inner wall of the opening 709a is lower than that of the material that has reached the inner wall. When the applied gravity is larger than the applied gravity, it is not necessary to invert the substrate 101 so that the surface on which the protective film 801 is formed is disposed below.

Further, by continuously annealing the protective film 801 at 310 ° C. for 30 minutes, a solute portion of the organic polymer resin (protective film 801) undergoes a dehydration and ring-closing reaction, and the protective film 801 is thermally cured. By this curing, the protective film 80
8, the opening 709a is closed by the protective film 801 and the surface shape recognition sensor in which the space below the upper electrode 710a is completely sealed is obtained as shown in FIG. Can be Thereafter, in the same manner as described with reference to FIGS. 4A to 4C, as shown in FIG. 8D, the protruding structure 402a is formed on the protective film 801 formed by coating. A formed state is obtained.

Referring to FIG. 8C, a method of fabricating a hollow structure in the case where it is desired to remove portions other than the sealing film near the opening will be described with reference to FIG. FIG. 9A shows the same state as FIG. 8A. Next, as described above, the protective film (coating film) 80
The substrate 101 is heated at 120 ° C. (10 minutes) with the surface on which the substrate 1 is formed facing downward. By this heating, the solvent component of the protective film 801 is evaporated, and the fluidity of the protective film 801 is reduced. Next, a portion other than the vicinity of the opening is exposed by a known photolithography method, and the exposed portion is removed by development.
As shown in (b), only the protective film 801a near the opening is left.

Thereafter, as shown in FIG.
Upside down so that it is vertically downward with respect to gravity,
Annealing is performed by heating to 310 ° C. for 30 minutes in a nitrogen gas atmosphere to thermally cure the protective film 801a. Note that if the partially left protective film 801a has almost no fluidity, it is not necessary to turn the substrate 101 upside down in the thermosetting stage. Further, if the protruding structure 402a is formed in the same manner as described above, a sealed state including the protruding structure 402a is obtained as shown in FIG. 9D.

As described above, according to the present embodiment, after the lower sacrificial layer is removed by using the opening of the upper electrode to provide a space, the sealing film is formed on the upper electrode by coating. , The sealing can be easily performed. According to the present embodiment configured as described above, the opening of the upper electrode provided for forming the space is arranged so as not to be in contact with the supporting member, thereby preventing the liquid to be applied from flowing into the space. I did it. The liquid to be applied forms a protective film. Therefore, even in the sealed state, the space formed below the upper electrode can maintain the state before the sealing. As a result, according to the present embodiment, even when the upper electrode is formed to be movable, the movement of the upper electrode after sealing is not hindered.

Next, the principle shown in FIGS. 8A and 9A for enabling sealing by applying a liquid material will be described with reference to FIG. FIG. 10 (a)
Is a sealing liquid 1001 that becomes a protective film by spin coating.
Are the openings 1002 of the upper electrode 1003 to be sealed
FIG. 4 is a schematic cross-sectional view showing a state in which the upper part has been reached. First, the opening 1002 is separated from the support member 1003a. The sealing liquid 1001 in the upper part of the opening 1002 is as shown in FIG.
As shown in FIG.
It flows into the lower internal space 1004.

FIG. 10 (c) is an enlarged view of FIG. 10 (b). When the sealing liquid 1001 flows, the opening 10
02, the volume of the sealing liquid 1001b in the upper region is v, the density of the sealing liquid 1001 is ρ, the radius of the circular opening 1002 is r, the contact angle between the sealing liquid 1001 and the opening inner wall 1005 is φ, The magnitude of the surface tension between the sealing liquid 1001 and the material forming the opening inner wall 1005 is γ, and the gravitational acceleration is g. Here, the material forming the opening inner wall 1005 is the same as the material forming the upper electrode 1003.

When the contact angle φ is an acute angle, it is referred to as “the sealing liquid wets the inner wall of the opening”, and the surface tension acts in a direction in which the sealing liquid 1001 flows. On the other hand, when the contact angle φ is an obtuse angle, it is referred to as “the sealing liquid does not wet the inner wall of the opening”, and the surface tension acts in a direction to prevent the flow of the sealing liquid 1001. The force for flowing the sealing liquid 1001 by gravity is indicated by an arrow 1007, and the direction is vertically downward and the magnitude is vρg. On the other hand, the surface tension when the contact angle φ is an obtuse angle is indicated by an arrow 1008.

When the contact angle φ is obtuse and the sealing liquid 1001 does not wet the inner wall 1005 of the opening, the force acting in the vertical upward direction to prevent the flow of the sealing liquid 1001 due to the surface tension γ is 2πrγcos (π−φ ). vρg> 2π
If rγcos (π-φ), the sealing liquid 1001 flows in,
If vρg ≦ 2πrγcos (π−φ), the sealing liquid 100
The inflow of 1 stops. Therefore, if a material having a large surface tension γ and not allowing the sealing liquid 1001 to wet the opening inner wall 1005 is selected, the sealing liquid 1001 travels along the opening inner wall 1005 as shown in FIG. The inflow stops before reaching the space 1004.

On the other hand, the surface tension γ is small,
1 has a small contact angle φ with the inner wall 1005 of the opening, the tip of the sealing liquid 1001 reaches the upper wall 1009 of the internal space, and as shown in FIG.
I try to spread through 9.

Since the contact angle is a fixed value determined by the combination of materials, the sealing liquid 1001
When reaching the upper wall 1009 of the internal space from above, the direction of the surface tension is rotated by up to 90 degrees. As shown in FIG. 10D, assuming that the rotation angle (change in contact angle) in the process of expanding the inner space upper wall 1009 is α, the vertically upward force due to surface tension is 2πrγcos (π− (φ +
α)) = 2πrγcos ((π−φ) −α).

Since φ is an obtuse angle, (π−φ) is an acute angle, and considering that 0 ≦ α ≦ 90 °, there is a state where the surface tension is completely vertically upward in the middle of the process. Take 2πrγ. Therefore, if vρg ≦ 2πrγ, as shown in FIG. 10B, even if the sealing liquid 1001 does not stop at the opening inner wall 1005, the inner space upper wall 100
The inflow stops before spreading 9. On the other hand, vpg>
In the case of 2πrγ, the sealing liquid 1001 spreads along the inner space upper wall 1009 as shown in FIG.

At this time, since the surface tension is proportional to the length of the outer periphery where the sealing liquid 1001 and the inner space upper wall 1009 are in contact with each other, the total surface tension increases as the sealing liquid 1001 spreads. At the same time, the sealing liquid 1001 also has a droplet shape and spreads to increase the volume, so that the force for expanding the sealing droplet 1001c by gravity increases. As shown in FIG. 10 (e), when the sealing droplet 1001c is approximated to a hemisphere and the radius is r ′, the surface tension increases in proportion to r ′,
The gravity on the sealing droplet 1001c increases in proportion to the cube of r '.

Therefore, the flow of the sealing liquid 1001 does not stop, and the sealing liquid 1001 reaches the lower wall 1010 of the internal space or the internal space 1004 is filled with the sealing liquid 1001. However, as shown in FIG.
This is not the case when the volume decreases due to the depression of the protective film 1001 on the upper part 02. As described above, the flow of the sealing liquid 1001 is stopped when the opening 1002 is separated from the support member 1003a.

By the way, let the density of the liquid material be ρ, and let the volume of the liquid material be the sum of the part that entered the opening at the stage when the coating film was formed and the part of the area above it, v
Where r is the radius of the opening, γ is the surface tension of the liquid material on the inner wall of the opening, and g is the gravitational acceleration.
If the relationship of vρg ≦ 2πrγ is satisfied, the inflow of the sealing liquid can be suppressed. However, this is the case where the opening is substantially cylindrical.

In the case where the opening has another pillar shape or the like, the following will be shown. When the thickness of the coating film in the region other than the opening when the coating film is formed is t, the cross-sectional area of the opening at the boundary between the outside of the space and the opening is a, and the opening at the boundary between the space and the opening is Let b be the perimeter of the cross section of b, the volume in the opening be c, and the magnitude of the surface tension between the portion of the coating film entering the opening and the side wall of the opening at the boundary between the space and the opening. Is d, the density of the coating film is e, and the gravitational acceleration is g, (c + a × t) × e × g
If the relationship of ≦ b × d is satisfied, it is possible to suppress the inflow of the sealing liquid (the portion that has entered the opening of the coating film).

Next, the case where the opening provided for etching the sacrificial layer is in contact with the side wall of the internal space will be described. This is a case where the opening 1002a is adjacent to the support member 1003a and a part of the opening inner wall 1005a is continuous with the support member 1003a, as shown in FIG. FIG. 11A shows a state in which the sealing liquid 1001 has been applied and a part of the liquid has entered the opening 1002a.

As described above, when the surface tension is greater than the magnitude of gravity, that is, vρg ≦ 2πrγco
If s (π−φ), the inflow of the liquid stops as in the case shown in FIG. On the other hand, when the surface tension is smaller than the gravity, as shown in FIG. 11B, part of the sealing liquid 1001 that has entered the opening 1002a reaches the inner space upper wall 1009. However, in this case, the area where the direction of the surface tension rotates is smaller than that in the case shown in FIG.

The portion where the sealing liquid 1001 is in contact with the inner space upper wall 1009 changes the direction of the surface tension to increase the vertical upward component, but the portion where the sealing liquid 1001 is in contact with the inner space side wall 1005a. Does not change the direction of the surface tension. Therefore, as shown in FIG.
a is adjacent to the support member 1003a, the sealing liquid 1
001 has a small force to prevent the inflow, and the sealing liquid 1001 can easily flow. As a result, after the sealing liquid 1001 reaches the inner space lower wall 1010 along the inner space side wall 1003, as shown in FIG. 1001 is satisfied.

In the above, the relationship of the force at the time of inflow of the sealing liquid has been described. In the actual process, as shown in FIG. 9A, after applying the sealing liquid to form the protective film 801, The substrate 101 is heated upside down. By heating, the viscosity increases due to the volatilization of the solvent component of the applied protective film 801 (sealing liquid), and finally solidifies (hardens). As shown in FIG. 10A to FIG. 10D, the time required for the sealing liquid 1001 to travel along the inner wall 1005 of the opening and enter the internal space 1004 is longer as the viscosity is larger.

This is apparent from Poiseuille's equation that "the flow rate of a liquid flowing through a thin tube within a certain time is inversely proportional to the viscosity." Also, the upper electrode 100
3, the longer the opening 1002 is, the longer it takes to flow. Also, by turning the substrate 101 upside down during baking, the direction of gravity described in FIG. 4 acts in a direction that does not allow the sealing liquid 1001 to flow into the internal space 1004.

As described above, by arranging the opening so as not to be adjacent to the side wall of the internal space, the upward component of the surface tension can be increased, and the inflow of the sealing liquid can be prevented. At this time, the sealing liquid hardly wets the material forming the opening, and the larger the surface tension between them,
Alternatively, as the radius of the opening is smaller, or as the opening is longer, or as a sealing liquid, a material having a higher viscosity at room temperature and a higher viscosity due to heating and solidification is used. The shorter the time before the application is turned upside down, the more the sealing liquid can be sealed without flowing into the internal space through the opening.

<Embodiment 6> By the way, for example, FIG.
In the surface shape recognition sensor shown in (c) and the like, when the pressure from the surface shape recognition target such as a finger is excessive, the upper electrode may bend too much and contact the lower electrode, resulting in a short circuit in a circuit. is there. To prevent this, the upper surface of the lower electrode may be covered with an insulating film as described below.
Hereinafter, a main part of the method for manufacturing the surface shape recognition sensor according to the present embodiment will be described.

First, as shown in FIG. 1A to FIG. 1D, as shown in FIG. 12A, a lower electrode 104a of which the upper layer is made of gold and a lower electrode
4a and the supporting member 106a which is insulated and separated. Next, as shown in FIG. 12B, an insulating film 1201 made of a silicon oxide film is formed to a thickness of 0.1 μm by ECR (Electron Cyclotron Resonance) plasma CVD (Chemical Vapor Deposition). Using SiH ₄ and O ₂ gas as source gas,
A silicon oxide film was formed at a gas flow rate of 10 sccm and 20 sccm and a microwave power of 200 W. In addition,
The insulating film 1201 is not limited to a silicon oxide film, but may be another insulating material such as a silicon nitride film.

Next, as shown in FIG. 12C, a resist pattern 1202 having a thickness of about 1 μm is formed in the upper region of the lower electrode 104a on the insulating film 1201 so as to cover the entire lower electrode 104a. Resist pattern 1202
May be formed by a known photolithography technique. After that, the insulating film 1201 is selectively etched using the resist pattern 1202 as a mask. This etching is performed by dry etching using CHF ₃ gas and O ₂ gas as etching gas, each gas flow rate is set to 30 sccm and 5 sccm, and microwave power is set to 3 sccm.
00W. As a result, as shown in FIG.
An electrode insulating film 1201a covering the lower electrode 104a is formed.

Thereafter, as shown in FIGS. 1E to 3C, a plurality of projections 311a are formed in the region above the lower electrode 104a as shown in FIG. 12E. The protective film 311 may be formed so as to cover the upper electrode 110a. According to this surface shape recognition sensor, the electrode insulating film 1201a is provided on the lower electrode 104a. Therefore, even if the upper electrode 110a is largely bent downward, the lower part of the upper electrode 110a is electrically connected to the lower electrode 104a. No contact is made.

The lower electrode 104a and the upper electrode 110
In order to avoid the contact with “a”, these intervals are made longer than necessary, and the formed capacitance may become small and the sensitivity may be reduced. In contrast, FIG.
According to the surface shape recognition sensor (e), the distance between the lower electrode and the upper electrode can be reduced, so that the sensitivity does not decrease. Furthermore, the upper electrode 11
When excessive pressure is applied to the upper electrode 110a
In some cases, the plastic deformation did not return to the original state. However, according to the surface shape recognition sensor of FIG. 12E, such a problem can be suppressed.

Next, another method of manufacturing the electrode insulating film will be described. First, in the same manner as in the above-described embodiment, as shown in FIG.
Resist pattern 10 having a film thickness of about 5 μm and having a thickness of 03a
Form 3 After forming the resist pattern 103,
On the seed layer 102 exposed in the opening 103a, a metal pattern 10 made of a gold plating film by electrolytic plating.
4 is formed to a thickness of about 1 μm.

In the present embodiment, the resist pattern
Using the ECR plasma CVD method without removing the
The insulating film 1301 made of a silicon oxide film has a thickness of 0.3 μm.
It is formed with a film thickness of about m (FIG. 13B). even here,
SiH as source gas_Four, O _TwoUsing gas, each source gas
Microwave power is set to 10sccm and 20sccm.
Was set to 200 W to form a silicon oxide film.

Next, the resist pattern 103 is removed. At this time, the resist pattern 103 is formed on the insulating film 1301.
Is removed by lift-off. As a result, only the insulating film 1301a on the metal pattern 104 remains (FIG. 13C). Thereafter, as in FIG. 1C, a resist pattern 105 is formed, and a metal pattern 106 made of a gold plating film is formed by electrolytic plating (FIG. 13D). Thereafter, the resist pattern 105
Is removed (FIG. 13E).

Next, the formed metal patterns 104,
The seed layer 102 is selectively etched using the mask 106 as a mask. In this etching, first, gold in the upper layer of the seed layer 102 is selectively removed using an etching solution containing iodine, ammonium iodide, water, and ethanol.
Next, the seed layer 102 is formed using an HF-based etchant.
The lower titanium layer is selectively removed. At this time, the insulating film 1301a is also etched by the HF-based etchant. However, the thickness of the insulating film 1301a is 0.3 μm, and the entire insulating film 1301a is not removed while the 0.1 μm titanium film is etched, and remains as an electrode insulating film 1301b described later. .

As a result, as shown in FIG. 13F, a lower electrode 104a whose upper layer is made of gold is
The upper electrode insulating film 1301b and the lower electrode 104
a and the supporting member 106a that is insulated and separated from the electrode insulating film 1301b. FIG. 13F shows FIG.
This corresponds to the state of (d), and thereafter, FIGS.
Through the same steps as in (c), a surface shape recognition sensor as shown in FIG. 12 (e) is formed.

In this embodiment, the insulating film 13
Although a silicon oxide film is taken as an example as 01, another insulator such as a silicon nitride film may be used as long as it is not etched during the etching of gold, titanium, and the sacrificial film, or if only a small amount of etching is required. It may be used.

The electrode insulating film may be manufactured as described below. First, as in the above-described embodiment,
As shown in FIG. 14A, a resist pattern 1 having an opening 103a on the seed layer 102 and having a thickness of about 5 μm is formed.
03 is formed. After forming the resist pattern 103, a metal pattern 104 made of a gold plating film is formed to a thickness of about 1 μm on the seed layer 102 exposed in the opening 103a by electrolytic plating.

Next, in this embodiment, the resist pattern 103 is removed, and thereafter, an insulating film 1401 made of a silicon oxide film is formed to a thickness of 0.1 μm on the seed layer 102 so as to cover the metal pattern 104. I do. Insulating film 14
01 may be formed in a manner similar to that of the insulating film 1201 shown in FIG.

Next, as shown in FIG. 14C, an upper region of the insulating film 1401 and the metal pattern 104
A resist pattern 1402 having a thickness of 1.0 μm is formed by a known photolithography technique. After the formation of the resist pattern 1402, the insulating film 1401 is selectively removed by etching using this as a mask (FIG. 14).
(D)). In this dry etching, CHF ₃ and O ₂ are used as etching gases, and the flow rates of these gases are each 3
0 sccm and 5 sccm, and the microwave power was 300 W. Next, if the resist pattern 1402 is removed,
As shown in FIG. 14E, an electrode insulating film 1401a made of a silicon oxide film is formed on the metal pattern 104.

Thereafter, similarly to FIG. 1C, a metal pattern 106 made of a gold plating film is formed by resist pattern formation and electrolytic plating (FIG. 14F), and the resist pattern is removed (FIG. 14F). FIG. 14 (g)). FIG.
(G) corresponds to the state of FIG. 12 (d), and thereafter, FIG.
12 (e) to FIG. 3 (c).
A sensor for recognizing the surface shape as shown in FIG. Note that the insulating film 1401 is not etched when the gold, titanium, and sacrificial films are etched, or another insulator such as a silicon nitride film may be used as long as a small amount of etching is required. good.

Next, the operation of the surface shape recognition sensor showing the manufacturing steps in the above embodiment will be described. FIG. 15 shows the operating principle of the surface shape recognition sensor. An object such as a finger as a surface shape recognition target is pressed against a sensor chip in which the surface shape recognition sensor is two-dimensionally arranged. At this time, the concave portion of the object having the irregularities does not contact the surface shape recognition sensor (FIG. 15A). On the other hand, the convex part of the object contacts the upper part of the surface shape recognition sensor,
Pressure is applied to the protruding structure 504a (FIG. 15).
(B)). Depending on the magnitude of the pressure at this time, the upper electrode 1
10a bends. Here, a case of a surface shape recognition sensor using a protruding structure 504a made of metal will be described as an example.

When the upper electrode 110a bends, the upper electrode 11
The capacitance formed between Oa and the lower electrode 104a increases. The increase in the capacitance is detected by an integrated circuit on the substrate 101 (not shown). Further, the magnitude of the change in capacitance is converted into grayscale data, and the surface shape is detected. In this operation, when a large pressure is applied from the outside, the upper electrode 110a
According to the present embodiment, the upper electrode 110a and the lower electrode 104a can be prevented from being in contact with each other, because the electrode insulating film 1201a is provided. Therefore,
Short circuit between the upper electrode 110a and the lower electrode 104a due to contact is avoided, and the upper electrode 110a and the lower electrode 1
04a can be prevented from sticking to the metal surface.

Further, since the electrode insulating film 1201a is a dielectric, the change in capacitance formed between the upper electrode 110a and the lower electrode 104a can be increased. In addition, by setting the electrode insulating film 1201a to an appropriate thickness and giving an upper limit to the movable depth of the upper electrode 110a, mechanical fatigue and destruction of the upper electrode 110a due to deformation can be prevented.

A method of designing an electrode insulating film for realizing the above advantages will be described below. For simplicity,
As shown in FIG. 16A, the bending direction of the upper electrode 110a is positive, and the upper electrode 110a when no pressure is applied.
An axis is set with the center of a as the origin. Further, the thickness of the electrode insulating film 1201a is represented by t, and the distance between the upper electrode 110a and the electrode insulating film 1201a is represented by dt. FIG.
As shown in FIG. 6B, the position at which the upper electrode 110a bends due to external pressure is x.

First, FIG. 17A, FIG. 17B, FIG.
As shown in FIG. 7C, a case where the thickness of the electrode insulating film 1201a is different while the movable depth dt of the upper electrode 110a is fixed. In this state, the upper electrode 110a
FIG. 17 (d) shows the change in capacitance when x is moved from x = 0 to the position of x = dt. As can be seen from this figure, the smaller the thickness of the electrode insulating film 1201a, the wider the dynamic range of the capacitance.

Next, as shown in FIGS. 18 (a), 18 (b) and 18 (c), while the thickness of the electrode insulating film 1201a is constant, the movable depth of the upper electrode 110a is changed. (D ₁ −t <d ₂ −t <d ₃ −t). FIG. 18D shows a change in capacitance when the upper electrode 110a is moved from x = 0 to a possible value in this state.

By the way, in order to work as a sensor, the upper electrode must be deformed by pressure when pressure is applied, and return to the original state without deformation when pressure is not applied. The upper electrode has a threshold value within the range of elastic deformation that returns to the original state if the deformation amount is equal to or less than a certain value, but falls within the range of plastic deformation that does not return to the original state when the deformation amount exceeds a certain value.

In FIG. 18, when the amount of movement of the upper electrode, which is the threshold value of the elastic deformation and the plastic deformation, is d ₂ -t,
Elastic deformation occurs when 0 ≦ x ≦ d ₂ −t, and plastic deformation occurs when d ₂ −t ≦ x. Therefore, the upper electrode 1
Even if 10a and the electrode insulating film 1201a between like d = d ₃ which distance is free large, an allowable range of the movable as the sensor is 0 ≦ x ≦ d ₂ -t. For this reason, looking at the dynamic range of the capacitance in FIG. 18D, it can be seen that the widest is when d = d ₂ . That is, the dynamic range is largest when the upper electrode can be deformed maximum within the range of elastic deformation.

Next, the case where the thickness of the electrode insulating film 1201a and the movable depth of the upper electrode 110a are fixed and the dielectric constant ε of the electrode insulating film is changed will be described. FIG.
As shown in FIGS. 9 (a), 19 (b) and 19 (c),
When electrode insulating films having dielectric constants different from ε ₃ <ε ₂ <ε ₁ are used, the corresponding dynamic range of capacitance is as shown in FIG. That is, the larger the dielectric constant of the electrode insulating film, the wider the dynamic range of the capacitance in the sensor.

Next, the shape of the electrode insulating film 1201a will be described. Lower electrode 104a and electrode insulating film 1201
a are both squares, with their centers at the origin,
The axis is set as shown in FIG. FIG. 20 (a)
FIG. 20B shows a state where the lower electrode 104a and the electrode insulating film 1201a are viewed from above. Lower electrode 104a
Is a square with one side b, and the electrode insulating film 1201a is one side a
Square.

With such a configuration, when a is increased from 0, the lower electrode 104a and the upper electrode 1
FIG. 20C shows the capacitance formed between 10a. The capacitance at a = a ₁ where 0 ≦ a ≦ b is a = b
Smaller than the capacitance at. The capacitance at a = a ₂ where a> b is equal to the capacitance at a = b. However, a>
The region b is not preferable because the capacitance between the lower electrode 104a and the support member 106a increases.

For the above reasons, the electrode insulating film 1201a
Is formed so as to cover the lower electrode 104a without excess or shortage. In an actual process, it is difficult to form a completely congruent shape, so a margin of about 1 μm is taken into consideration.
20 (a), 20 (b), and 20 (c), the shape of the lower electrode 104a is assumed to be a square, but it goes without saying that the above fact can be applied even if the shape is not a square.

In summary, in order to amplify the difference between external irregularities and detect with high sensitivity, a wider dynamic range of capacitance is better.
The electrode insulating film 1201a is formed as thin as possible,
This shape may be the same as the shape of the lower electrode 104a, and the surface of the electrode insulating film 1201a may be formed at a position where the upper electrode 110a does not exceed the limit of elastic deformation.

[0110]

As described above, according to the present invention,
Since a plurality of protruding structures are provided on the upper electrode via the protective film, an excellent effect that sensitivity can be improved can be obtained. In addition, since the upper electrode that is movable apart from the lower electrode is provided on the lower electrode, first, the surface shape recognition of the present invention is performed such that there is no electrostatic breakdown caused by static electricity generated at the time of sensing. The sensor for use has excellent stability, high sensitivity, miniaturization, and versatility.

[Brief description of the drawings]

FIG. 1 is a schematic process diagram showing a manufacturing process of a surface shape recognition sensor according to an embodiment of the present invention.

FIG. 2 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 3 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 4 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 5 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 6 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 7 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 8 is a schematic process diagram illustrating a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 9 is a schematic process diagram showing a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view illustrating the principle of enabling sealing by applying a liquid material in the manufacture of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view for explaining a problem in the case of sealing by applying a liquid material.

FIG. 12 is a schematic cross-sectional view showing a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view showing a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view showing a manufacturing process of the surface shape recognition sensor according to the embodiment of the present invention.

FIG. 15 is a schematic cross-sectional view showing an operation state of the surface shape recognition sensor.

FIG. 16 is a schematic cross-sectional view showing an operation state of the surface shape recognition sensor.

FIG. 17 is a schematic sectional view (a), (b), (c) for explaining an operation state of a surface shape recognition sensor according to another embodiment of the present invention, and a graph (d) showing characteristics. It is.

FIG. 18 is a schematic sectional view (a), (b), (c) for explaining an operation state of a surface shape recognition sensor according to another embodiment of the present invention, and a graph (d) showing characteristics. It is.

FIG. 19 is a schematic cross-sectional view (a), (b), (c) for explaining an operation state of a surface shape recognition sensor according to another embodiment of the present invention, and a graph (d) showing characteristics. It is.

FIG. 20 is a schematic cross-sectional view (a), a plan view (b), and a graph (c) showing characteristics of a sensor for recognizing a surface shape according to another embodiment of the present invention. .

FIG. 21 is a schematic cross-sectional view showing the configuration of a conventional surface shape recognition sensor.

FIG. 22 is a schematic sectional view showing a configuration of a surface shape recognition sensor having a movable upper electrode.

[Explanation of symbols]

101: substrate, 101a: interlayer insulating film, 102: seed layer (first metal film), 103: resist pattern (first
, 103a ... opening, 104 ... metal pattern (first metal pattern), 104a ... lower electrode, 105 ... resist pattern (second mask pattern), 105a ... opening, 106 ... metal pattern (first 2
106a: support member, 107: resin film, 107a: opening, 108: seed layer, 109: resist pattern, 110: metal film, 110a: upper electrode, 117: sacrificial film, 301: photosensitive resin Membrane, 302 ...
Sheet film, 311: protective film, 311a: projection (projection-like structure), 321: protection circuit.

Continuing on the front page (72) Inventor Kuragi Boku 2-3-1 Otemachi, Chiyoda-ku, Tokyo Within Nippon Telegraph and Telephone Corporation (72) Inventor Satoshi Shigematsu 2-3-1 Otemachi, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Inventor Hiroki Morimura 2-3-1 Otemachi, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Inventor Jin Ishii 2-chome Otemachi, Chiyoda-ku, Tokyo No. 1 Nippon Telegraph and Telephone Corporation (72) Inventor Toshishige Shimamura 2-3-1 Otemachi, Chiyoda-ku, Tokyo F-term within Nippon Telegraph and Telephone Corporation (reference) 2F063 AA43 BA29 CA09 CA17 CA34 DA02 DA05 DC08 DD07 HA04 NA06 4C038 FF01 FF05 FG00 5B047 AA25

Claims (57)

[Claims] 1. A lower electrode, each of which is insulated and separated and fixedly arranged on the same plane of an interlayer insulating film formed on a semiconductor substrate, and a plurality of openings arranged on the lower electrode at predetermined intervals. A plurality of capacitance detecting elements formed of a deformable plate-shaped upper electrode made of a metal having a portion; A support member for supporting the upper electrode, a protective film disposed on the upper electrode to cover the opening, and a plurality of protective films disposed in a region of the protective film on the capacitance detecting element. A sensor for recognizing a surface shape, comprising: a protruding structure. 2. The surface shape recognition sensor according to claim 1, wherein the protective film and the protruding structure are integrally formed. 3. The surface shape recognition sensor according to claim 1, wherein the support member is made of metal. 4. The sensor for recognizing a surface shape according to claim 1, further comprising an electrode insulating film disposed on the lower electrode, wherein the upper electrode has a predetermined shape on the electrode insulating film. A sensor for recognizing a surface shape, wherein the sensors are arranged at intervals. 5. The surface shape recognizing sensor according to claim 4, wherein, when the amount of movement of the central portion of the upper electrode when the upper electrode undergoes a maximum deformation within a range in which the upper electrode is elastically deformed is A, the upper electrode. Wherein the distance between the electrode and the electrode insulating film is equal to or less than A. 6. The surface shape recognition sensor according to claim 4, wherein the electrode insulating film is formed in substantially the same shape as the lower electrode, and is disposed so as to cover the lower electrode. A surface shape recognition sensor characterized by the following. 7. A lower electrode, each of which is insulated and separated and fixedly arranged on the same plane of an interlayer insulating film formed on a semiconductor substrate, and a plurality of openings arranged on the lower electrode at predetermined intervals. A plurality of capacitance detecting elements formed of a deformable plate-shaped upper electrode made of a metal having a portion; A support member for supporting the upper electrode, a protective film disposed on the upper electrode to cover the opening, and a metal disposed in a region of the protective film on the capacitance detection element. A sensor for recognizing a surface shape, comprising: 8. The surface shape recognition sensor according to claim 7, wherein the protruding structure is disposed in a region on the lower electrode. 9. The sensor for surface shape recognition according to claim 7, wherein the plurality of protrusion-like structures are arranged in a region on the capacitance detection element. 10. The surface shape recognition sensor according to claim 7, wherein the support member is made of a metal. 11. The surface shape recognition sensor according to claim 7, further comprising: an electrode insulating film disposed on the lower electrode, wherein the upper electrode has a predetermined shape on the electrode insulating film. A sensor for recognizing a surface shape, wherein the sensors are arranged at intervals. 12. The sensor for recognizing a surface shape according to claim 11, wherein, when the amount of movement of the central portion of the upper electrode when the upper electrode undergoes a maximum deformation in a range in which the upper electrode elastically deforms is A, the upper electrode. Wherein the distance between the electrode and the electrode insulating film is equal to or less than A. 13. The sensor for recognizing a surface shape according to claim 11, wherein the electrode insulating film is formed in substantially the same shape as the lower electrode, and is disposed so as to cover the lower electrode. A surface shape recognition sensor characterized by the following. 14. A step of forming an interlayer insulating film on a semiconductor substrate, a step of forming a first metal film on the interlayer insulating film, and an opening in a predetermined region on the first metal film. First
Forming a first mask pattern; and a first mask pattern exposed at a bottom of an opening of the first mask pattern.
Forming a first metal pattern on the surface of the metal film by a plating method; and removing the first mask pattern and then forming a second metal pattern having an opening disposed around the first metal pattern. Forming a mask pattern on the first metal film and the first metal pattern; and plating the second metal pattern on the surface of the first metal film exposed at the bottom of the opening by a plating method. Forming a metal pattern thicker than the first metal pattern; and removing the second mask pattern, etching the first metal film using the first metal pattern and the second metal pattern as a mask. Removing to form a lower electrode composed of the first metal film and the first metal pattern and a support member composed of the first metal film and the second metal pattern; Forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the support member; and forming an upper electrode having a plurality of openings on the sacrificial film and the support member. A step of selectively removing only the sacrificial film through the opening after forming the upper electrode; and forming a protective film on the upper electrode after removing the sacrificial film. Forming a photosensitive resin film having photosensitivity on the protective film, and exposing and developing a predetermined pattern on the photosensitive resin film, thereby forming a protective film on the capacitance detecting element. Forming a plurality of protruding structures in a region, and forming a plurality of capacitance detecting elements constituted by the lower electrode and the upper electrode. 15. The method of manufacturing a sensor for surface shape recognition according to claim 14, wherein the protective film is formed on the upper electrode by transfer. 16. The method for manufacturing a sensor for recognizing a surface shape according to claim 15, wherein the step of transferring the protective film is performed by using S
A method for manufacturing a sensor for recognizing a surface shape, characterized by using a TP method. 17. The method for manufacturing a surface shape recognition sensor according to claim 15, wherein the step of forming the lower electrode includes the step of forming a first metal film on the semiconductor substrate and the step of forming the first metal. Forming a first resist patterned on a film, forming the lower electrode in an opening of the first resist, and removing the first resist; Forming a second resist patterned on the first metal film;
A step of forming the supporting member in the opening of the second resist, a step of removing the second resist, and a step of etching the first metal film using the lower electrode and the supporting member as a mask. Forming the upper electrode; forming a sacrificial film on the lower electrode and the support member; removing the sacrificial film on the support member to expose the support member; And forming a second metal film on the sacrificial film;
A step of forming a patterned third resist on the second metal film, a step of forming the upper electrode in an opening of the third resist, and a step of removing the third resist; A step of etching the second metal film using the upper electrode as a mask; and a step of removing the sacrificial film. The step of transferring the protective film includes applying the protective film on the upper electrode by STP. The step of transferring, the step of forming the photosensitive resin film, the step of applying a photosensitive resin film on the protective film, the step of processing the photosensitive resin film into a protruding structure, A method for manufacturing a surface shape recognition sensor, comprising: a step of exposing a part of the photosensitive resin film; and a step of developing after exposure. 18. The method for manufacturing a sensor for surface shape recognition according to claim 14, wherein the sacrificial film is a resin made of polyimide. Method. 19. The method for manufacturing a sensor for surface shape recognition according to claim 18, wherein the sacrificial film is a resin made of a polybenzoxazole precursor. 20. The method for manufacturing a sensor for recognizing a surface shape according to claim 14, wherein the removal of the sacrificial film is performed by heating the sacrificial film and exposing the sacrificial film to an ozone atmosphere. A method for manufacturing a sensor for surface shape recognition, which is a feature of the present invention. 21. The method for manufacturing a sensor for recognizing a surface shape according to claim 14, wherein the lower electrode, the support member, and the upper electrode are made of gold. Of manufacturing surface shape recognizing sensor. 22. The method for manufacturing a sensor for recognizing a surface shape according to claim 14, wherein the opening is separated from a side wall of the support member on the sacrificial film and the support member. After forming the upper electrode, after removing the sacrificial film, a liquid material is applied on the upper electrode to form a coating film, which is solidified to form a protective film on the upper electrode. A method for manufacturing a sensor for recognizing a surface shape, wherein the sensor is formed and covers the opening. 23. The method for manufacturing a sensor for recognizing a surface shape according to claim 22, wherein in forming the coating film, the coating film is solidified in a state where the coating film is disposed on a side where a force acts on the substrate. Of manufacturing surface shape recognition sensor 24. The method for manufacturing a sensor for recognizing a surface shape according to claim 23, wherein in forming the coating film, the coating film is solidified while the coating film is disposed below the substrate. A method for manufacturing a surface shape recognition sensor. 25. The method for manufacturing a surface shape recognition sensor according to claim 22, wherein the thickness of the coating film in a region other than the opening when the coating film is formed is t, The sectional area of the opening at the boundary between the outside of the space formed between the lower electrode and the opening is defined as a, and the perimeter of the cross section of the opening at the boundary between the space and the opening is defined as b, the volume inside the opening is c, and the magnitude of the surface tension between the portion of the coating film entering the opening and the side wall of the opening at the boundary between the space and the opening. Where d is the density of the coating film, and g is the gravitational acceleration, the relationship of (c + a × t) × e × g ≦ b × d is satisfied. Manufacturing method of sensor. 26. The method for manufacturing a surface shape recognition sensor according to claim 22, wherein the upper electrode is formed by plating gold on the sacrificial film and around the sacrificial film. A method for manufacturing a sensor for recognizing a surface shape, wherein the material is applied to form the coating film. 27. The method for manufacturing a surface shape recognition sensor according to claim 26, wherein the coating film is formed by applying a liquid material composed of photosensitive polyimide, and the coating film is formed by photolithography. A surface shape, wherein a region other than the periphery of the opening is removed and a remaining portion is solidified to form a protective film on the region of the opening of the upper electrode to cover the opening. Manufacturing method of recognition sensor. 28. The method for manufacturing a surface shape recognition sensor according to claim 14, wherein the lower portion is lower than the support member on the lower electrode before the sacrificial film is formed. A method of manufacturing a sensor for recognizing a surface shape, comprising: forming a first insulating film covering an electrode; and selectively removing the first insulating film to form an electrode insulating film on the lower electrode. 29. The method for manufacturing a surface shape recognition sensor according to claim 14, wherein after forming the first metal pattern, the metal pattern is formed on the first metal pattern. Forming a first insulating film so as to cover the first mask pattern, forming an electrode insulating film on the first metal pattern by removing the first mask pattern, and thereafter forming the second mask pattern; A method for manufacturing a sensor for recognizing a surface shape, characterized in that: 30. The method for manufacturing a sensor for recognizing a surface shape according to claim 14, wherein the first metal pattern is removed, and then the first metal pattern is formed on the first metal pattern. Forming a first insulating film so as to cover a pattern, selectively removing the first insulating film, forming an electrode insulating film on the first metal pattern, and forming the electrode insulating film. Forming a second mask pattern, the method for manufacturing a sensor for surface shape recognition. 31. A step of forming an interlayer insulating film on a semiconductor substrate; a step of forming a first metal film on the interlayer insulating film; and providing an opening in a predetermined region on the first metal film. First
Forming a first mask pattern; and a first mask pattern exposed at a bottom of an opening of the first mask pattern.
Forming a first metal pattern on the surface of the metal film by a plating method; and removing the first mask pattern and then forming a second metal pattern having an opening disposed around the first metal pattern. Forming a mask pattern on the first metal film and the first metal pattern; and plating the second metal pattern on the surface of the first metal film exposed at the bottom of the opening by a plating method. Forming a metal pattern thicker than the first metal pattern; and removing the second mask pattern, etching the first metal film using the first metal pattern and the second metal pattern as a mask. Removing to form a lower electrode composed of the first metal film and the first metal pattern and a support member composed of the first metal film and the second metal pattern; Forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the support member; and forming an upper electrode having a plurality of openings on the sacrificial film and the support member. A step of selectively removing only the sacrificial film through the opening after forming the upper electrode; and a step of forming a photosensitive layer on the upper electrode after removing the sacrificial film. Forming a conductive resin film, and exposing and developing a predetermined pattern on the photosensitive resin film, a protective film covering the upper electrode, and a protective film disposed in a region on the capacitance detecting element of the protective film. Forming a plurality of protrusion-like structures at the same time, and forming a plurality of capacitance detection elements constituted by the lower electrode and the upper electrode. 32. The method for manufacturing a sensor for surface shape recognition according to claim 31, wherein the photosensitive resin film is formed on the upper electrode by transfer. 33. The method of manufacturing a surface shape recognition sensor according to claim 32, wherein the step of transferring the photosensitive resin film uses an STP method as the transfer method. Manufacturing method. 34. The method of manufacturing a surface shape recognition sensor according to claim 32, wherein the step of forming the lower electrode includes the steps of: forming a first metal film on the semiconductor substrate; Forming a patterned first resist on the metal film, forming the lower electrode in an opening of the first resist, and removing the first resist. Forming a supporting member; forming a patterned second resist on the first metal film;
A step of forming the supporting member in the opening of the second resist, a step of removing the second resist, and a step of etching the first metal film using the lower electrode and the supporting member as a mask. Forming the upper electrode; forming a sacrificial film on the lower electrode and the support member; removing the sacrificial film on the support member to expose the support member; And forming a second metal film on the sacrificial film;
A step of forming a patterned third resist on the second metal film, a step of forming the upper electrode in an opening of the third resist, and a step of removing the third resist; A step of etching the second metal film using the upper electrode as a mask, and a step of removing the sacrificial film. The step of transferring the photosensitive resin film comprises: Transferring to an upper electrode, forming the protective film and a plurality of protrusion-like structures thereon, exposing a part of the photosensitive resin film, and developing after exposure. A method for manufacturing a surface shape recognition sensor, comprising: 35. The method for manufacturing a surface shape recognition sensor according to claim 31, wherein the sacrificial film is a resin made of polyimide. Method. 36. The method for manufacturing a sensor for surface shape recognition according to claim 35, wherein the sacrificial film is a resin made of a polybenzoxazole precursor. 37. The method of manufacturing a surface shape recognition sensor according to claim 31, wherein the removing of the sacrificial film is performed by heating the sacrificial film and exposing the sacrificial film to an ozone atmosphere. A method for manufacturing a sensor for surface shape recognition, which is a feature of the present invention. 38. The method for manufacturing a sensor for recognizing a surface shape according to claim 31, wherein the lower electrode, the support member, and the upper electrode are made of gold. Of manufacturing surface shape recognizing sensor. 39. The method of manufacturing a surface shape recognition sensor according to claim 31, wherein the lower portion is lower than the support member on the lower electrode before forming the sacrificial film. A method of manufacturing a sensor for recognizing a surface shape, comprising: forming a first insulating film covering an electrode; and selectively removing the first insulating film to form an electrode insulating film on the lower electrode. 40. The method for manufacturing a surface shape recognition sensor according to claim 31, wherein after forming the first metal pattern, the metal pattern is formed on the first metal pattern. Forming a first insulating film so as to cover the first mask pattern, forming an electrode insulating film on the first metal pattern by removing the first mask pattern, and thereafter forming the second mask pattern; A method for manufacturing a sensor for recognizing a surface shape, characterized in that: 41. The method for manufacturing a sensor for recognizing a surface shape according to claim 31, wherein the first mask pattern is removed, and then the first metal pattern is formed on the first metal pattern. Forming a first insulating film to cover the metal pattern; selectively removing the first insulating film to form an electrode insulating film on the first metal pattern; forming the electrode insulating film And forming the second mask pattern. 42. A step of forming an interlayer insulating film on a semiconductor substrate; a step of forming a first metal film on the interlayer insulating film; and providing an opening in a predetermined region on the first metal film. First
Forming a first mask pattern; and a first mask pattern exposed at a bottom of an opening of the first mask pattern.
Forming a first metal pattern on the surface of the metal film by a plating method; and removing the first mask pattern and then forming a second metal pattern having an opening disposed around the first metal pattern. Forming a mask pattern on the first metal film and the first metal pattern; and plating the second metal pattern on the surface of the first metal film exposed at the bottom of the opening by a plating method. Forming a metal pattern thicker than the first metal pattern; and removing the second mask pattern, etching the first metal film using the first metal pattern and the second metal pattern as a mask. Removing to form a lower electrode composed of the first metal film and the first metal pattern and a support member composed of the first metal film and the second metal pattern; Forming a sacrificial film on the interlayer insulating film so as to cover the lower electrode and expose the upper portion of the support member; and forming an upper electrode having a plurality of openings on the sacrificial film and the support member. A step of selectively removing only the sacrificial film through the opening after forming the upper electrode; and forming a protective film on the upper electrode after removing the sacrificial film. A step of forming a second metal film on the protective film; and a third step of forming an opening in a predetermined region on the second metal film.
Forming a second mask pattern, and a second mask pattern exposed at the bottom of the opening of the third mask pattern.
Forming a third metal pattern on the surface of the metal film by a plating method, and after removing the third mask pattern, etching and removing the second metal film using the third metal pattern as a mask; Forming a protruding structure composed of the second metal film and the third metal pattern, and forming a plurality of capacitance detecting elements composed of the lower electrode and the upper electrode. Of manufacturing surface shape recognizing sensor. 43. The method for manufacturing a sensor for surface shape recognition according to claim 42, wherein the protective film is formed on the upper electrode by transfer. 44. The method of manufacturing a sensor for recognizing a surface shape according to claim 43, wherein the step of transferring the protective film is performed by using S
A method for manufacturing a sensor for recognizing a surface shape, characterized by using a TP method. 45. The method for manufacturing a surface shape recognition sensor according to claim 42, wherein the sacrificial film is a resin made of polyimide. Method. 46. The method for manufacturing a sensor for surface shape recognition according to claim 45, wherein the sacrificial film is a resin made of a polybenzoxazole precursor. 47. The method of manufacturing a surface shape recognition sensor according to claim 42, wherein the removal of the sacrificial film is performed by heating the sacrificial film and exposing the sacrificial film to an ozone atmosphere. A method for manufacturing a sensor for surface shape recognition, which is a feature of the present invention. 48. The method of manufacturing a surface shape recognition sensor according to claim 42, wherein the lower electrode, the support member, and the upper electrode are made of gold. Of manufacturing surface shape recognizing sensor. 49. The method of manufacturing a surface shape recognition sensor according to claim 42, wherein the opening is separated from a side wall of the support member on the sacrificial film and the support member. After forming the upper electrode, after removing the sacrificial film, a liquid material is applied on the upper electrode to form a coating film, which is solidified to form a protective film on the upper electrode. A method for manufacturing a sensor for recognizing a surface shape, wherein the sensor is formed and covers the opening. 50. The method for manufacturing a sensor for recognizing a surface shape according to claim 49, wherein in forming the coating film, the coating film is solidified in a state where the coating film is arranged on a side where a force acts on the substrate. Of manufacturing surface shape recognition sensor 51. The method for manufacturing a sensor for recognizing a surface shape according to claim 50, wherein in forming the coating film, the coating film is solidified while the coating film is disposed below the substrate. A method for manufacturing a surface shape recognition sensor. 52. The method of manufacturing a sensor for surface shape recognition according to claim 49, wherein the thickness of the coating film in a region other than the opening when the coating film is formed is t, The sectional area of the opening at the boundary between the outside of the space formed between the lower electrode and the opening is defined as a, and the perimeter of the cross section of the opening at the boundary between the space and the opening is defined as b, the volume inside the opening is c, and the magnitude of the surface tension between the portion of the coating film entering the opening and the side wall of the opening at the boundary between the space and the opening. Where d is the density of the coating film, and g is the gravitational acceleration, the relationship of (c + a × t) × e × g ≦ b × d is satisfied. Manufacturing method of sensor. 53. The method of manufacturing a surface shape recognition sensor according to claim 49, wherein the upper electrode is formed by plating gold on the sacrificial film and around the sacrificial film. A method for manufacturing a sensor for recognizing a surface shape, wherein the material is applied to form the coating film. 54. The method for manufacturing a sensor for surface shape recognition according to claim 53, wherein the coating film is formed by applying a liquid material composed of a photosensitive polyimide, and the coating film is formed by photolithography. A surface shape, wherein a region other than the periphery of the opening is removed and a remaining portion is solidified to form a protective film on the region of the opening of the upper electrode to cover the opening. Manufacturing method of recognition sensor. 55. The method for manufacturing a surface shape recognition sensor according to claim 42, wherein the lower portion is lower than the support member on the lower electrode before the sacrificial film is formed. A method of manufacturing a sensor for recognizing a surface shape, comprising: forming a first insulating film covering an electrode; and selectively removing the first insulating film to form an electrode insulating film on the lower electrode. 56. The method of manufacturing a surface shape recognition sensor according to claim 42, wherein after forming the first metal pattern, the metal pattern is formed on the first metal pattern. Forming a first insulating film so as to cover the first mask pattern, forming an electrode insulating film on the first metal pattern by removing the first mask pattern, and thereafter forming the second mask pattern; A method for manufacturing a sensor for recognizing a surface shape, characterized in that: 57. The method for manufacturing a sensor for recognizing a surface shape according to claim 42, wherein the first mask pattern is removed and then the first metal pattern is formed on the first metal pattern. Forming a first insulating film to cover the metal pattern; selectively removing the first insulating film to form an electrode insulating film on the first metal pattern; forming the electrode insulating film And forming the second mask pattern.