JP2006191465A - Electronic apparatus - Google Patents

Electronic apparatus Download PDF

Info

Publication number
JP2006191465A
JP2006191465A JP2005002707A JP2005002707A JP2006191465A JP 2006191465 A JP2006191465 A JP 2006191465A JP 2005002707 A JP2005002707 A JP 2005002707A JP 2005002707 A JP2005002707 A JP 2005002707A JP 2006191465 A JP2006191465 A JP 2006191465A
Authority
JP
Japan
Prior art keywords
signal processing
processing device
peltier element
substrate
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005002707A
Other languages
Japanese (ja)
Inventor
Matsuo Kishi
松雄 岸
Kosuke Yamamoto
幸祐 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2005002707A priority Critical patent/JP2006191465A/en
Publication of JP2006191465A publication Critical patent/JP2006191465A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic apparatus enabling improvement of image quality of an output image by preventing temperature rise of a signal processing device and solid state image sensors caused by the heat generated therefrom, in the electronic apparatus having the solid state image sensors, represented by CCD image sensors, laminated on the signal processing device. <P>SOLUTION: The signal processing device for signal processing by receiving electric signals from the solid state image sensor including the CCD image sensors is deposited on a Peltier device, and further the solid state image sensors including a CCD image sensor and a CMOS imaging sensor are deposited in a laminated manner on the above signal processing device. The above devices are fabricated in a module by means of a member for retaining the above devices, optical components including a lens and a filter, and a member for retaining the optical components. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ＣＣＤイメージセンサーやＣＭＯＳイメージセンサーなどの固体撮像素子を用い画像をセンシングし、映像化あるいは写真化するための電子機器に関する。   The present invention relates to an electronic device that senses an image using a solid-state imaging device such as a CCD image sensor or a CMOS image sensor, and visualizes or photographs the image.

デジタルカメラやビデオカメラ等では、画像のセンシングにＣＣＤイメージセンサーやＣＭＯＳイメージセンサー等の半導体を用いた固体撮像素子を用いているが、これらの半導体を用いたイメージセンサーは、温度上昇と共に暗電流が増化する。この暗電流の増化は、センシングした画像の画質の低下をもたらしている。   In digital cameras and video cameras, solid-state image sensors using semiconductors such as CCD image sensors and CMOS image sensors are used for image sensing. However, image sensors using these semiconductors have dark current as temperature rises. Increase. This increase in dark current results in a decrease in the image quality of the sensed image.

また、上記イメージセンサーから出力される電気信号は、信号処理デバイスにより処理されることにより画像化されるが、この信号処理デバイスは、高速動作するため非常に大きな電力を消費し、大きな発熱源となる。   The electrical signal output from the image sensor is imaged by being processed by a signal processing device. This signal processing device consumes a large amount of power because of its high-speed operation, and has a large heat source. Become.

一方、電子機器や光学部品の小型化要求に対して、レンズやフィルターなどの光学系とイメージセンサーを保持し、電気的に実装する基板をパッケージとし、イメージセンサーをこの中に封入する構造がとられてきているが、さらに、イメージセンサーと信号処理デバイスは非常に近接した位置に実装されるようになってきており、信号処理デバイスの上にイメージセンサーを直接接着し、実装しモジュール化したものが多用されるようになった。たとえば、このような例が、特許文献１や特許文献２に開示されている。
特開平１１−２６１０４４号公報 特開２００４−６５６４号公報 On the other hand, in response to the demand for miniaturization of electronic equipment and optical components, a structure that holds an optical system such as a lens and a filter and an image sensor, and an electrically mounted substrate is packaged, and the image sensor is enclosed in this package. In addition, the image sensor and the signal processing device have been mounted at very close positions, and the image sensor is directly bonded on the signal processing device, mounted and modularized. Has come to be heavily used. For example, such an example is disclosed in Patent Document 1 and Patent Document 2.
JP-A-11-261044 JP 2004-6564 A

しかしながら、上記特許文献１に記載された従来のモジュール化されたものには、イメージセンサーや信号処理デバイスからの熱を放出するために、ヒートシンクが取付けられるが、信号処理デバイスから発熱した熱の影響は避けられず、イメージセンサーが加熱され、温度上昇をきたすため画質の劣化が著しかった。   However, the conventional module described in Patent Document 1 is provided with a heat sink in order to release heat from the image sensor and the signal processing device. Was inevitable, and the image sensor was heated, causing the temperature to rise and the image quality deteriorated significantly.

本発明は、前記課題を解決するために以下の手段を提供する。   The present invention provides the following means in order to solve the above problems.

本発明の電子機器は、イメージセンサーが取付けられた信号処理デバイスをその裏面よりペルチェ素子により冷却することによりイメージセンサーの温度上昇を防ぎ、さらに、下げることができることを特徴とするものである。   The electronic apparatus according to the present invention is characterized in that the temperature of the image sensor can be prevented from rising and further lowered by cooling the signal processing device to which the image sensor is attached from the back surface thereof with a Peltier element.

また、ペルチェ素子を発熱体である信号処理デバイスに直接とりつけるため、吸熱効率が高まると同時に、全体の大きさを小さく留めることが出来る。   Further, since the Peltier element is directly attached to the signal processing device which is a heating element, the heat absorption efficiency is enhanced and the overall size can be kept small.

さらに、光学部品や保持部品・配線部品等によりパッケージされるので、ペルチェ素子により室温以下に冷却した場合においても、雰囲気より結露を生じることが無くなる。   Further, since it is packaged by an optical component, a holding component, a wiring component, or the like, dew condensation does not occur from the atmosphere even when it is cooled to room temperature or lower by a Peltier element.

本発明によれば、イメージセンサーの温度上昇を押さえるだけでなく下げることができるので、イメージセンサーの性能に係わる暗電流を下げることがきる。これにより、優れた質の画像出力できる電子機器を提供することができる。   According to the present invention, it is possible not only to suppress the temperature rise of the image sensor but also to reduce it, so that the dark current related to the performance of the image sensor can be reduced. Thereby, it is possible to provide an electronic apparatus that can output an image of excellent quality.

（第１実施形態）
以下、本発明の第１実施形態に係る電子機器について、図面を参照して説明する。図１は、本発明である電子機器の主要部の断面図である。電気配線が施された基板１上にペルチェ素子２が接着剤等により固定され、電気的にはワイヤー３により基板１上の配線に接続され電力が供給されるようになっている。ペルチェ素子２は、その放熱面側が基板１側となるように配置されている。信号処理デバイス４はペルチェ素子２の吸熱面側に取付けられペルチェ素子２と同様にワイヤー３により基板１に電気的に接続され信号の入出力ができるようになっている。さらに、ＣＣＤイメージセンサー５は信号処理デバイス４に接続されており、電気的にはワイヤー３により外部と接続が取られている。このペルチェ素子２、信号処理デバイス４およびＣＣＤイメージセンサー５は、フィルター７およびレンズ８を保持した鏡筒６と、ペルチェ素子２、信号処理デバイス４及びＣＣＤイメージセンサー５を保持すると共にこれらに電力を供給する前記基板１により覆われることで、パッケージ化された状態にたもたれ、いわゆるカメラモジュール９を構成した形となっている。 (First embodiment)
Hereinafter, an electronic apparatus according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a main part of an electronic apparatus according to the present invention. A Peltier element 2 is fixed on a substrate 1 to which electrical wiring is applied by an adhesive or the like, and is electrically connected to wiring on the substrate 1 by a wire 3 so that electric power is supplied. The Peltier element 2 is arranged so that the heat radiating surface side is the substrate 1 side. The signal processing device 4 is attached to the heat absorbing surface side of the Peltier element 2 and is electrically connected to the substrate 1 by the wire 3 in the same manner as the Peltier element 2 so that signals can be input and output. Further, the CCD image sensor 5 is connected to the signal processing device 4, and is electrically connected to the outside by a wire 3. The Peltier element 2, the signal processing device 4 and the CCD image sensor 5 hold the lens barrel 6 holding the filter 7 and the lens 8, the Peltier element 2, the signal processing device 4 and the CCD image sensor 5, and supply power to them. By being covered by the substrate 1 to be supplied, it is in a packaged state and forms a so-called camera module 9.

このカメラモジュール９にヒートシンクを取り付け、ＣＣＤイメージセンサー５、信号処理デバイス４および関連周辺部品を動作させ画像を取り込んだ。このとき、ペルチェ素子２を動作させずに動作した場合、ＣＣＤイメージセンサー５の温度は、初期温度２５℃であったものが、４２℃まで上昇した。これは、ＣＣＤイメージセンサー５の発熱に加え、信号処理デバイス４の発熱が加わったため、このような大幅な温度上昇をきたしたものである。つぎに、ペルチェ素子２に電流を流し、このペルチェ素子２上に取付けられたＣＣＤイメージセンサー５と信号処理デバイス４の冷却を行った。ヒートシンク能力とのバランスをとりながらペルチェ素子２への投入電力を調整したところ、ＣＣＤイメージセンサー５の温度は２０℃となった。   A heat sink was attached to the camera module 9, and the CCD image sensor 5, the signal processing device 4 and related peripheral components were operated to capture images. At this time, when operated without operating the Peltier element 2, the temperature of the CCD image sensor 5 was raised from the initial temperature of 25 ° C. to 42 ° C. This is because the heat generation of the signal processing device 4 in addition to the heat generation of the CCD image sensor 5 causes such a large temperature increase. Next, a current was passed through the Peltier element 2 to cool the CCD image sensor 5 and the signal processing device 4 mounted on the Peltier element 2. When the input power to the Peltier device 2 was adjusted while balancing the heat sink capability, the temperature of the CCD image sensor 5 was 20 ° C.

ペルチェ素子を取付けていない従来の品の構造を図２に示す。これに対しても同様の実験を行ったところ、ＣＣＤイメージセンサー５の温度は４０℃となっていた。このことから、本発明によるＣＣＤイメージセンサー５に対する冷却効果は４０℃−２０℃＝２０℃ということになる。一般に、シリコンを用いたＣＣＤイメージセンサー５では、８℃の温度低下に対して、ノイズは半減する。したがって、本実施形態では、ノイズが約１８％、すなわち、８２％のノイズ低減が図れたことになる。   The structure of a conventional product without a Peltier element is shown in FIG. When the same experiment was conducted for this, the temperature of the CCD image sensor 5 was 40 ° C. From this, the cooling effect on the CCD image sensor 5 according to the present invention is 40 ° C.−20 ° C. = 20 ° C. In general, in the CCD image sensor 5 using silicon, the noise is halved for a temperature drop of 8 ° C. Therefore, in this embodiment, the noise can be reduced by about 18%, that is, 82%.

(第２実施形態)
次に、図３をもとに本発明の第２実施形態について説明する。 (Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG.

図３に示すように、ペルチェ素子に取り付ける基板１にスルーホール（貫通孔）を形成し、基板表面およびスルーホール内を熱伝導率が高い金属、例えば銅などによりメタライズして熱伝導層１０を形成する。この熱伝導層１０の上にペルチェ素子２の放熱面を配置することにより、熱が貫通孔内の熱伝導層を通って基板裏側の熱伝導層に伝わる。従って、ペルチェ素子２およびこれに搭載されているＣＣＤイメージセンサー５と信号処理デバイス４からの熱の放散性を高めることができる。   As shown in FIG. 3, through holes (through holes) are formed in the substrate 1 attached to the Peltier element, and the heat conduction layer 10 is formed by metallizing the surface of the substrate and the through holes with a metal having high thermal conductivity, such as copper. Form. By disposing the heat radiation surface of the Peltier element 2 on the heat conductive layer 10, heat is transmitted to the heat conductive layer on the back side of the substrate through the heat conductive layer in the through hole. Therefore, heat dissipation from the Peltier element 2 and the CCD image sensor 5 and signal processing device 4 mounted on the Peltier element 2 can be enhanced.

（第３実施形態）
さらに、熱の放散性を高めるためには、図４に示すような金属等からなる熱伝導性の高いヒートシンク１１を直接ペルチェ素子２に接続してもよい。図４では、基板１に穴部を設け、この基板の裏面に設けたヒートシンク１１の一部を穴部から突出させて直接ペルチェ素子２の放熱側と接続する構造となっている。 (Third embodiment)
Furthermore, in order to improve heat dissipation, a heat sink 11 having a high thermal conductivity made of metal or the like as shown in FIG. 4 may be directly connected to the Peltier element 2. In FIG. 4, a hole portion is provided in the substrate 1, and a part of the heat sink 11 provided on the back surface of the substrate is protruded from the hole portion and directly connected to the heat dissipation side of the Peltier element 2.

なお、本実施形態では、ＣＣＤイメージセンサーを用いたが、ＣＭＯＳイメージセンサーでも同様の効果が得られることはいうまでもない。   In this embodiment, the CCD image sensor is used, but it goes without saying that the same effect can be obtained with a CMOS image sensor.

本発明の第１実施形態に係わる電子機器の概要を示す図である。It is a figure which shows the outline | summary of the electronic device concerning 1st Embodiment of this invention. 従来例の概要を示す図である。It is a figure which shows the outline | summary of a prior art example. 本発明の第１実施形態に係わる電子機器の別の例の概要を示す図である。It is a figure which shows the outline | summary of another example of the electronic device concerning 1st Embodiment of this invention. 本発明の第１実施形態に係わる電子機器の別の例の概要を示す図である。It is a figure which shows the outline | summary of another example of the electronic device concerning 1st Embodiment of this invention.

符号の説明Explanation of symbols

１・・・基板
２・・・ペルチェ素子
３・・・ワイヤー
４・・・信号処理デバイス
５・・・ＣＣＤイメージセンサー
６・・・鏡筒
７・・・フィルター
８・・・レンズ
９・・・カメラモジュール
１０・・・熱伝導層
１１・・・ヒートシンク DESCRIPTION OF SYMBOLS 1 ... Board | substrate 2 ... Peltier element 3 ... Wire 4 ... Signal processing device 5 ... CCD image sensor 6 ... Lens barrel 7 ... Filter 8 ... Lens 9 ... Camera module 10 ... heat conduction layer 11 ... heat sink

Claims (7)

ペルチェ素子と、
前記ペルチェ素子上に配置され撮像素子からの電気信号を受けて信号処理を行う信号処理デバイスと、
前記信号処理デバイス上に配置された撮像素子と、からなることを特徴とする電子機器。 Peltier element,
A signal processing device arranged on the Peltier element and receiving an electrical signal from the image sensor to perform signal processing;
An electronic device comprising: an image sensor disposed on the signal processing device. 前記ペルチェ素子を搭載し、前記ペルチェ素子、前記信号処理デバイス、及び前記撮像素子に電力を供給する基板と、
前記撮像素子の上に配置された光学部品を保持する保持部材と、からなり、
前記基板と前記保持部材とで、前記ペルチェ素子、前記信号処理デバイス、及び前記撮像素子を覆ったことを特徴とする請求項１記載の電子機器。 A substrate that mounts the Peltier element and supplies power to the Peltier element, the signal processing device, and the imaging element;
A holding member for holding an optical component disposed on the imaging element,
2. The electronic apparatus according to claim 1, wherein the substrate and the holding member cover the Peltier element, the signal processing device, and the imaging element. 前記基板に取り付けられた放熱部材を有し、この放熱部材に前記ペルチェ素子の放熱面が接続されていることを特徴とする請求項２記載の電子機器。 The electronic apparatus according to claim 2, further comprising a heat dissipation member attached to the substrate, wherein the heat dissipation surface of the Peltier element is connected to the heat dissipation member. 前記放熱部材は、前記基板の裏面に設けられ、前記基板に設けられた穴部から上方に突出することで前記ペルチェ素子の放熱面と接続することを特徴とする請求項３記載の電子機器。 4. The electronic apparatus according to claim 3, wherein the heat radiating member is provided on a back surface of the substrate and is connected to a heat radiating surface of the Peltier element by protruding upward from a hole provided in the substrate. 前記基板表面に設けられた熱伝導層を有し、この熱伝導層に前記ペルチェ素子の放熱面が接続されていることを特徴とする請求項２記載の電子機器。 3. The electronic apparatus according to claim 2, further comprising a heat conductive layer provided on the surface of the substrate, wherein a heat dissipation surface of the Peltier element is connected to the heat conductive layer. 前記基板は貫通孔を有し、この貫通孔内にも熱伝導層を設けたことを特徴とする請求項５記載の電子機器。 6. The electronic apparatus according to claim 5, wherein the substrate has a through hole, and a heat conductive layer is provided in the through hole. 前記電子機器はカメラモジュールであることを特徴とする請求項１から６のうちのいずれか１項に記載の電子機器。 The electronic device according to claim 1, wherein the electronic device is a camera module.
JP2005002707A 2005-01-07 2005-01-07 Electronic apparatus Pending JP2006191465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005002707A JP2006191465A (en) 2005-01-07 2005-01-07 Electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005002707A JP2006191465A (en) 2005-01-07 2005-01-07 Electronic apparatus

Publications (1)

Publication Number Publication Date
JP2006191465A true JP2006191465A (en) 2006-07-20

Family

ID=36798156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005002707A Pending JP2006191465A (en) 2005-01-07 2005-01-07 Electronic apparatus

Country Status (1)

Country Link
JP (1) JP2006191465A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051312B4 (en) * 2006-12-29 2009-09-10 Dongbu Hitek Co., Ltd. Method of manufacturing a CMOS device with Peltier element and photodiode
JP2010233015A (en) * 2009-03-27 2010-10-14 Canon Inc Image pickup device
JP2011187962A (en) * 2010-03-09 2011-09-22 Lg Innotek Co Ltd Light-emitting device
US8174597B2 (en) 2008-10-10 2012-05-08 Sony Corporation Solid-state imaging device and signal processing system
US8212887B2 (en) 2008-10-10 2012-07-03 Sony Corporation Solid-state image pickup device with optical communication unit and cooling unit
US8355049B2 (en) 2008-10-10 2013-01-15 Sony Corporation Solid-state imaging device including an optical communication section placed in proximity to an optical black area and signal processing system
US8368767B2 (en) 2008-10-10 2013-02-05 Sony Corporation Solid-state image pickup device, optical apparatus, signal processing apparatus, and signal processing system
US8704923B2 (en) 2008-10-10 2014-04-22 Sony Corporation Solid-state imager and signal processing system
CN103855110A (en) * 2012-11-30 2014-06-11 三星电子株式会社 Image sensors for performing thermal reset, methods thereof, and devices including the same
US9728487B2 (en) 2015-05-19 2017-08-08 Renesas Electronics Corporation Semiconductor device
WO2021131833A1 (en) * 2019-12-27 2021-07-01 ソニーセミコンダクタソリューションズ株式会社 Sensor device
WO2021235744A1 (en) * 2020-05-20 2021-11-25 엘지이노텍 주식회사 Image sensor package and camera device including same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051312B4 (en) * 2006-12-29 2009-09-10 Dongbu Hitek Co., Ltd. Method of manufacturing a CMOS device with Peltier element and photodiode
US8368767B2 (en) 2008-10-10 2013-02-05 Sony Corporation Solid-state image pickup device, optical apparatus, signal processing apparatus, and signal processing system
US8174597B2 (en) 2008-10-10 2012-05-08 Sony Corporation Solid-state imaging device and signal processing system
US8212887B2 (en) 2008-10-10 2012-07-03 Sony Corporation Solid-state image pickup device with optical communication unit and cooling unit
US8355049B2 (en) 2008-10-10 2013-01-15 Sony Corporation Solid-state imaging device including an optical communication section placed in proximity to an optical black area and signal processing system
US8704923B2 (en) 2008-10-10 2014-04-22 Sony Corporation Solid-state imager and signal processing system
JP2010233015A (en) * 2009-03-27 2010-10-14 Canon Inc Image pickup device
JP2011187962A (en) * 2010-03-09 2011-09-22 Lg Innotek Co Ltd Light-emitting device
US8546835B2 (en) 2010-03-09 2013-10-01 Lg Innotek Co., Ltd. Light emitting device
CN103855110A (en) * 2012-11-30 2014-06-11 三星电子株式会社 Image sensors for performing thermal reset, methods thereof, and devices including the same
US9728487B2 (en) 2015-05-19 2017-08-08 Renesas Electronics Corporation Semiconductor device
WO2021131833A1 (en) * 2019-12-27 2021-07-01 ソニーセミコンダクタソリューションズ株式会社 Sensor device
EP4084076A4 (en) * 2019-12-27 2023-04-19 Sony Semiconductor Solutions Corporation Sensor device
WO2021235744A1 (en) * 2020-05-20 2021-11-25 엘지이노텍 주식회사 Image sensor package and camera device including same

Similar Documents

Publication Publication Date Title
JP2006191465A (en) Electronic apparatus
JP4379295B2 (en) Semiconductor image sensor module and manufacturing method thereof
JP2008219704A (en) Semiconductor device
JP6529276B2 (en) Imaging device
JP2016502371A (en) Video shooting device
JP2008306303A (en) Imaging apparatus
JP2014535070A (en) Cooling aerial camera
US9668374B2 (en) Heat dissipating component and electronic device
TWI574561B (en) Imaging device having efficient heat transfer, and associated systems
JP2008131251A (en) Digital camera
JP2007134811A (en) Imaging apparatus
JP2008227653A (en) Semiconductor device having imaging element
JP5829430B2 (en) Imaging device
JPH01303745A (en) Package for solid-state image sensing element
JP5460178B2 (en) Imaging device
US20080297635A1 (en) Imaging apparatus
JP2002247594A (en) Image pickup device
JP6666027B2 (en) Semiconductor device and imaging device
JP2010226227A (en) Imaging apparatus
JP2006332841A (en) Image pickup device assembly
JP2010205916A (en) Semiconductor unit, and electronic imaging apparatus
JP2013172168A (en) Heat dissipation device, and imaging apparatus
JP2002072341A (en) Heat dissipating device
JP2008193358A (en) Imaging element unit
JP2010239581A (en) Imaging apparatus