JP2006191076A5 - - Google Patents

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Publication number
JP2006191076A5
JP2006191076A5 JP2005376492A JP2005376492A JP2006191076A5 JP 2006191076 A5 JP2006191076 A5 JP 2006191076A5 JP 2005376492 A JP2005376492 A JP 2005376492A JP 2005376492 A JP2005376492 A JP 2005376492A JP 2006191076 A5 JP2006191076 A5 JP 2006191076A5
Authority
JP
Japan
Prior art keywords
ion
reflective
ultraviolet rays
reflective layer
photomask according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005376492A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006191076A (ja
Filing date
Publication date
Priority claimed from KR1020040115074A external-priority patent/KR100630728B1/ko
Application filed filed Critical
Publication of JP2006191076A publication Critical patent/JP2006191076A/ja
Publication of JP2006191076A5 publication Critical patent/JP2006191076A5/ja
Withdrawn legal-status Critical Current

Links

JP2005376492A 2004-12-29 2005-12-27 反射フォトマスク及びその製造方法 Withdrawn JP2006191076A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040115074A KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법

Publications (2)

Publication Number Publication Date
JP2006191076A JP2006191076A (ja) 2006-07-20
JP2006191076A5 true JP2006191076A5 (OSRAM) 2009-02-12

Family

ID=36612032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005376492A Withdrawn JP2006191076A (ja) 2004-12-29 2005-12-27 反射フォトマスク及びその製造方法

Country Status (4)

Country Link
US (1) US20060141370A1 (OSRAM)
JP (1) JP2006191076A (OSRAM)
KR (1) KR100630728B1 (OSRAM)
CN (1) CN1797192A (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP5521714B2 (ja) * 2010-04-06 2014-06-18 凸版印刷株式会社 Euv用反射型マスク製造方法
WO2011157643A1 (en) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask
DE102011003357A1 (de) * 2011-01-31 2012-08-02 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2013156328A2 (en) * 2012-04-18 2013-10-24 Asml Netherlands B.V. Mask for lithographic apparatus and methods of inspection
TWI835896B (zh) * 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

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