JP2006176813A - Film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system where a vapor deposition material can be film-deposited into a uniform film thickness. <P>SOLUTION: The film deposition system 30 has a plurality of rectangular, cylindrical partition members 23 arranged in parallel along the longitudinal direction L of vapor deposition sources 22 orthogonal to a scanning direction S. The opening part of each partition member 23 is provided with a shielding member 31 having a hexagonal opening 32. In each opening 32 of the shielding member 31, the adjoining sides are bent to the outside. In this way, the vapor deposition regions projected on the face 21a to be vapor-deposited are partially superimposed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a film forming apparatus that forms a deposition material on a flat deposition surface of a member to be deposited, for example, a film deposition apparatus that forms a metal back or getter on the inner surface of a front substrate of a flat display device.

  In recent years, a field emission display (FED), a display device (SED) having a surface conduction electron-emitting device, and the like are known as a flat display device having a flat envelope having a flat panel structure.

  FED and SED vacuum envelopes are formed by joining the front and back substrates facing each other with a predetermined spacing through spacers and joining the peripheral edges to each other with rectangular frame-shaped side walls, and making the inside vacuum. The

  A phosphor layer of three colors and a metal back covering the phosphor layer are formed on the inner surface of the front substrate, and a large number of phosphor layers corresponding to each pixel of the phosphor layer as an electron emission source for exciting and emitting the phosphor layer on the inner surface of the rear substrate. An electron-emitting device is disposed. Further, in order to maintain a high vacuum inside the vacuum envelope, a getter film may be formed on the inner surface of the front substrate.

  When driving the display device having the above structure, a high voltage of several kV is applied to the phosphor layer with respect to the electron-emitting device, and an electron beam is selectively emitted from each electron-emitting device according to an image signal. The emitted electron beam is accelerated by a high voltage to irradiate the corresponding phosphor layer. As a result, a number of phosphor layers are selectively excited to emit light, and a color image corresponding to the image signal is displayed (see, for example, Patent Document 1).

  In order to display a high-quality image with the display device, it is necessary to form a metal back or getter formed on the phosphor layer so as to be as uniform as possible. That is, when the electron beam for causing the phosphor layer to emit light passes through the metal back or getter, the transmittance changes depending on the film thickness. Therefore, in order to suppress luminance unevenness, the film thickness of the metal back or getter is reduced. It needs to be uniform. On the other hand, when the film thickness is non-uniform, the electron beam transmittance is lowered and darkened in the region where the metal back or getter is formed relatively thick, and conversely, the region becomes bright in the region where the film thickness is relatively thin.

  Ideally, it is desirable that the variation range of the luminance unevenness with respect to the average luminance is 5% or less. When this ideal range is replaced with the film thickness distribution of the metal back, the average value of the film thickness is Tave, When the maximum value of thickness is Tmax and the minimum value is Tmin, the variation in film thickness (Tmax−Tmin / Tave) is preferably within 10%.

However, when the metal back is formed by a conventional film forming apparatus, it is the limit to suppress the above-described variation in film thickness to about 20%. The number had to be increased significantly, and it was not able to withstand mass production from the viewpoint of price and reliability.
JP 2002-184331 A

  An object of the present invention is to provide a film forming apparatus capable of forming a film of a vapor deposition material uniformly.

  In order to achieve the above object, a film forming apparatus according to the present invention includes: a plurality of vapor deposition sources each having a vapor deposition member having a flat vapor deposition surface and a plurality of vapor deposition sources arranged in parallel and spaced apart from the vapor deposition surface; An apparatus for depositing a deposition material on the deposition surface by moving relative to a scanning direction intersecting with the alignment direction of the plurality of deposition sources, wherein the deposition materials diffusing from the plurality of deposition sources interfere with each other between adjacent deposition sources. A plurality of cylindrical partition members that are partitioned so as not to be disposed, and openings that face the deposition surface of the partition members that are spaced apart from the deposition sources, and the deposition material is deposited on the deposition surface. A plurality of shielding members each having an opening having a shape that defines a shape of the vapor deposition region, wherein the plurality of partition members and the plurality of shielding members are configured so that the deposition target member and the plurality of deposition sources are relative to each other in the scanning direction. To form a deposition material on the deposition surface. When, characterized in that said plurality of vapor deposition zones are designed to at least partially overlapping structure above the evaporation surface.

  According to the above invention, the vapor deposition member and the plurality of vapor deposition sources are relatively moved, and the vapor deposition material diffused from each vapor deposition source is formed so as to partially overlap the vapor deposition surface.

  Since the vapor deposition apparatus according to the present invention has the above-described configuration and action, the film thickness of the vapor deposition material can be uniformly formed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, an SED will be described as an example of a display device manufactured using a film forming apparatus (described in detail later) according to an embodiment of the present invention.

  As shown in FIG. 1 to FIG. 3, the SED 1 includes a front substrate 2 (deposition member) and a rear substrate 4 each made of a rectangular glass plate having a rectangular shape of 1 to 2 mm. They are arranged opposite each other with a gap of 1.0 to 2.0 mm. The front substrate 2 and the back substrate 4 are joined together via a rectangular frame-shaped side wall 6 to constitute a vacuum envelope 10 whose inside is a vacuum.

  A phosphor screen 12 for displaying an image is formed on the inner surface (deposition surface) of the front substrate 2. The phosphor screen 12 has a configuration in which red, blue, and green phosphor layers R, G, and B and a light shielding layer 11 are arranged and the phosphor layer is covered with a metal back 14. The phosphor layers R, G, and B are formed in stripes or dots, and the metal back 14 is formed of a metal thin film such as aluminum (evaporation material).

  On the inner surface of the back substrate 4, a number of surface conduction electron-emitting devices 16 that emit an electron beam for exciting and emitting the phosphor layers R, G, and B are provided. These electron-emitting devices 16 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel, and are configured by an electron-emitting unit (not shown) and a pair of device electrodes for applying a voltage to the electron-emitting unit. Further, on the inner surface of the back substrate 4, a large number of wirings 18 for applying a driving voltage to the respective electron-emitting devices 16 are provided in a matrix shape, and end portions thereof are drawn out of the vacuum envelope 10. Yes.

  The front substrate 2 and the rear substrate 4 are degassed and fired in a vacuum atmosphere, and the peripheral portions are sealed together to form a vacuum envelope 10. Prior to sealing, the front substrate 2 and the rear substrate 4 are sealed in the vacuum atmosphere. A getter made of barium or the like (evaporation material) is formed over the entire inner surface so that a high vacuum can be maintained after the paneling.

  In the SED 1, when an image is displayed, a voltage is applied between the element electrodes of the electron-emitting device 16 through the wiring 18 to emit an electron beam from an electron-emitting portion of the arbitrary electron-emitting device 16 and the phosphor screen 12. The electron beam is accelerated by the anode voltage applied to the phosphor screen 12 to irradiate the phosphor screen 12. As a result, the desired phosphor layers R, G, and B are excited to emit light and display an image.

  Here, the soft flash structure of the metal back 14 described above will be described with reference to FIG. FIG. 4 shows a structure in which the metal back 14 is divided into a plurality of island-like regions 14a for each of the phosphor layers R, G, and B (pixels). Here, in order to clarify the illustration, the sizes of the regions 14a and the pixels R, G, and B with respect to the substrate 2 are different from the actual ratio. Further, although FIG. 4 shows an example in which the metal back 14 is divided into island-shaped regions 14a covering the respective pixels, the metal back 14 may be divided into a plurality of regions covering a plurality of pixels. In any case, in the present embodiment, the metal back 14 is divided into a plurality of small regions 14a, and the plurality of regions 14a are connected by a high resistance member 14b.

  The higher the resistance of the high resistance member 14b between the regions 14a, the more the discharge current can be suppressed. On the other hand, an anode voltage drop is caused by the electron beam current for image display. The optimum resistance value of the high-resistance member 14b cannot be uniformly mentioned because the discharge current suppressing effect depends on the structure of the division and the withstand voltage characteristics between the divisions, but is generally a value of 1 kΩ to 10 MΩ. By making the metal back 14 have such a soft flash structure, even if a discharge occurs, the metal back 14 is divided into small regions 14a. Therefore, it is possible to limit the discharge current and suppress damage caused by the discharge.

  Next, an example of a general film forming apparatus 20 for forming the metal back 14 on the inner surface of the front substrate 2 will be described with reference to FIGS. Note that a mask member such as a rib is used for film formation of the metal flash 14 having the soft flash structure described above. Here, the film formation apparatus 20 for forming a vapor deposition material on the vapor deposition surface 21a of the flat substrate 21 is used. explain. In other words, the film forming apparatus described below can be applied to any member having a flat deposition surface. In the following description, the film forming atmosphere of the film forming apparatus is a vacuum of E-3 Pa level.

  As shown in FIG. 5, the film forming apparatus 20 has five vapor deposition sources 22 arranged in parallel in a line at a regular interval of 360 mm in the direction of arrow L (alignment direction) in the drawing within a substantially horizontal plane. . Each deposition source 22 is an electron beam deposition source, which irradiates Al, which is a deposition material placed in a hearth, with an electron beam, and heats and evaporates the Al material by the electron beam power.

  Above each vapor deposition source 22 in the figure, a rectangular cylindrical partition member 23 is provided for partitioning the vapor deposition material to diffuse so as not to interfere between adjacent vapor deposition sources 22. Here, the side surfaces of the five partition members 23 are connected and closely arranged in the arrow L direction. In addition, although shown in a cylindrical shape in the figure, in practice, in order to prevent an increase in pressure due to the gas released from the vapor deposition source, an opening with an eaves that does not scatter on the substrate 21 side is provided on the side surface. In addition, each partition member 23 has a rectangular opening 23a at an end away from the corresponding vapor deposition source 22, and the openings 23a are opposed to each other by a predetermined distance from the substrate 21 arranged along a substantially horizontal plane. Are arranged to be. The substrate 21 is disposed along a substantially horizontal plane that is 650 mm away from the vapor deposition source 22.

  More specifically, each partition member 23 has an opening 23a having a long side (360 mm) extending in the arrow L direction and a short side (131.0 mm) extending in the arrow S direction (scanning direction) in the drawing. In addition, four side walls having a height of 627.7 mm toward the substrate 21 are provided. The substrate 21 has a long side 21b (1400 mm) extending in the arrow L direction and a short side 21c (800 mm) extending in the arrow S direction. Further, the distance between each opening 23 a and the deposition surface 21 a of the substrate 21 is 22.3 mm, and the five openings 23 a are arranged in the longitudinal direction of the substrate 21.

  Then, the substrate 21 and the vapor deposition source 22 (and the partition member 23) are moved at a relatively constant speed in the direction of the arrow S. Here, only the substrate 21 is moved (scanned) at the constant speed in the direction of the arrow S, and each vapor deposition is performed. The vapor deposition material diffusing from the source 22 is vapor-deposited on the vapor deposition surface 21a of the substrate 21 through the opening 23a of each partition member 23 to form the vapor deposition material on the vapor deposition surface 21a.

  At this time, each partition member 23 limits the incident angle at which the vapor deposition material is applied to the vapor deposition surface 21a from the corresponding vapor deposition source 22 within ± 20 ° with respect to the direction perpendicular to the vapor deposition surface 21a. To work. Thus, by limiting the incident angle of the vapor deposition material with respect to the deposition surface 21a, the distribution of the film thickness depending on the diffusion angle of the vapor deposition material can be made as uniform as possible. Moreover, when using mask members, such as the rib mentioned above, the irradiation angle of a vapor deposition material can be brought close as vertical as possible, and the malfunction which a vapor deposition material connects with the side surface of a rib can be prevented.

  Further, the shape of the opening 23a of each partition member 23 is a region of a vapor deposition material (hereinafter, vapor deposition) that is vapor deposited (projected) on the vapor deposition surface 21a of the substrate 21 in a state where the substrate 21 is not scanned in the arrow S direction. Shape). Here, since the shape of each opening part 23a is a rectangle (360 * 131.0 mm), the shape of the vapor deposition area | region projected on the to-be-deposited surface 21a also becomes a rectangular shape similar to opening shape. That is, the vapor deposition material diffuses from the vapor deposition source 22, and the opening 23a of each partition member 23 is spaced 22.3 mm from the vapor deposition surface 21a of the substrate 21, and is thus projected onto the vapor deposition surface 21a. In the vapor deposition region, adjacent vapor deposition regions partially overlap each other.

  In FIG. 6, the substrate 21 is stopped at a position where the five openings 23a face the center of the substrate 21 in the direction of arrow S, and the deposition material is diffused from each deposition source 22 to form the deposition material on the deposition surface 21a. The film thickness distribution of the vapor deposition material is shown. FIG. 7 is a graph showing values obtained by integrating the film thickness distribution of FIG. 6 in the arrow S direction.

  According to this, it turns out that the film thickness of the part which adjacent vapor deposition area | regions overlapped is significantly thick compared with another part. Such a film thickness distribution along the direction in which the vapor deposition sources 22 are arranged (the direction of the arrow L) indicates that when the substrate 21 is scanned to form a film on the entire vapor deposition surface 21a, a plurality of stripe irregularities along the scan direction. appear. That is, in the portion where the film thickness of the vapor deposition material is thicker, the energy loss when the electron beam passes is larger than that in the other portions, the luminance is lowered, and it appears as black streak unevenness.

  In order to prevent such streak unevenness, a shielding member having a rectangular opening that is slightly reduced in consideration of the diffusion angle of the vapor deposition material is provided in each opening 23a, or each partition member 23 is separated in the direction of arrow L. For example, a method of eliminating the overlap of the adjacent vapor deposition regions by separating the adjacent openings 23a can be considered. However, even if such a method is adopted, it is difficult to successfully connect the vapor deposition regions at the boundary portions of the adjacent vapor deposition regions on the deposition surface 21a, and the portions where the vapor deposition materials partially overlap due to mechanical errors or the like. The site | part with insufficient film thickness of a vapor deposition material will arise.

  For this reason, in this Embodiment, the shielding member which has an opening of the shape which can cancel the overlap of a vapor deposition material was provided in the opening part 23a of each division member 23, and it was made to eliminate the problem of the above-mentioned stripe unevenness. Here, the case where the unevenness is eliminated by providing a shielding member having an opening of a special shape in the opening 23a of each partition member 23 will be described. However, the shape of the vapor deposition region on the vapor deposition surface 21a of the substrate 21 is described. You may employ | adopt the other method which can control. For example, the partition member itself may be processed and its cross-sectional shape may be controlled.

  A film forming apparatus 30 according to the first embodiment of the present invention will be described below with reference to FIGS. In this film forming apparatus 30, the shielding member 31 having a hexagonal opening 32 is provided in the opening 23a of each partition member 23, and the width of each partition member 23 along the arrow S direction is different (this book). (In the embodiment, 403.7 mm), the component having substantially the same structure as the above-described film forming apparatus 20, the same reference numerals are given to components that function in the same manner as the above-described film forming apparatus 20, and the detailed description thereof is given. Is omitted.

  As shown in FIGS. 8 and 9, a plate-shaped shielding member 31 having a hexagonal opening 32 is provided in the opening 23 a of each partition member 23. The shielding member 31 is not necessarily provided separately for each opening 23a, and may be formed by a single plate that simultaneously covers the five openings 23a.

  As shown in FIG. 9, the hexagonal opening 32 of the shielding member 31 of the present embodiment has a width along the arrow L direction of 360 mm which is the same as the pitch of the vapor deposition source 22 and a width along the arrow S direction of 307. .1 mm, and bent in a U shape so that both ends of the arrow L direction protrude outward. The width along the arrow L direction of the bent inclined side is 86.1 mm.

  In FIG. 10, the substrate 21 is stopped at a position where the five openings 23 a face the center in the arrow S direction of the substrate 21, and the vapor deposition material is diffused from each vapor deposition source 22 to pass through the opening 32 of the shielding member 31 described above. The film thickness distribution of the vapor deposition material when the vapor deposition material is formed on the deposition surface 21a is shown. FIG. 11 is a graph showing values obtained by integrating the film thickness distribution of FIG. 10 in the arrow S direction.

  According to this, also in the present embodiment, it can be seen that the vapor deposition regions adjacent to each other on the vapor deposition surface 21a partially overlap with each other in a state where the substrate 21 and the vapor deposition source 22 are not relatively moved. As a result, even if a mechanical shift occurs, it is possible to suppress the occurrence of large stripe unevenness in the boundary region.

  More specifically, in the present embodiment, the area of the portion where the adjacent vapor deposition regions overlap with the vapor deposition surface 21a and the area of the portion where no vapor deposition region exists are the lengths along the arrow S direction of each vapor deposition region ( In this embodiment, the shape of the opening 32 of each shielding member 31 and the position of the partition member 23 with respect to the substrate 21 are designed so that the respective vapor deposition regions are formed in substantially the same shape within the range of 407.3 mm). ing. In other words, the shape of the opening 32 of the shielding member 31 is not limited to a hexagon, and may be any shape as long as the shape satisfies the above-described conditions. However, considering that the film thickness is distributed depending on the incident angle of the vapor deposition material with respect to the deposition surface 21a, it is desirable that the shape of the opening 32 of the shielding member 31 is close to a circle, as in the present embodiment. It is effective to use a hexagon.

  Therefore, when the deposition material is deposited on the deposition surface 21a using the deposition apparatus 30 of the present embodiment, adjacent deposition regions are related to the thickness of the deposition material deposited on the entire deposition surface 21a. The thickness of the overlapping portion is substantially the same as the thickness of the portion where the vapor deposition regions do not overlap. In other words, the shape of the opening 32 of each shielding member 31 is the value obtained by integrating the film thickness of the portion where the vapor deposition regions overlap with each other with respect to the film thickness of the vapor deposition material deposited on the entire surface to be vapor-deposited 21a, It is designed to have a shape in which the value obtained by integrating the film thickness of the portion where the vapor deposition regions do not overlap with each other in the direction of the arrow S is substantially equal. By adopting this opening shape, the film thickness of the vapor deposition material can be made uniform. In addition, according to the present embodiment, a margin for mechanical displacement of the shielding member 31 can be ensured, and even when the displacement occurs, the unevenness of the stripe can be made inconspicuous.

  In the first embodiment described above, the shape of the opening 32 of each shielding member 31 is hexagonal, but shielding members having various shapes of openings that satisfy the above-described conditions can be employed.

  12 and 13 show a modification of the above-described first embodiment. FIG. 12 shows two openings 34 of the shielding member 31 provided in the opening 23 a of the adjacent partition member 23. FIG. 13 shows a region of the vapor deposition material deposited on the deposition target surface 21a through the two openings 34.

  According to this, the opening 34 of the shielding member has a curved shape so that both ends of the partition members 23 in the arrangement direction protrude outward. Also in this modified example, an opening shape in which the area of the portion where the vapor deposition region overlaps on the deposition surface 21a and the area of the portion where the vapor deposition region does not exist are substantially equal within the length range along the arrow S direction of the vapor deposition region. Has been. That is, even if the shielding member having such an opening shape is employed, the same effect as that of the first embodiment described above can be obtained, and the film thickness of the vapor deposition material can be made uniform.

  By the way, in the embodiment described above, the problem of streak unevenness at the boundary between adjacent vapor deposition regions can be solved, but the variation in film thickness over the entire vapor deposition surface 21a has reached a sufficiently satisfactory level. Absent. For example, referring to FIG. 11, the film thickness is the thickest at the center of each opening 32, the film thickness is the thinnest between adjacent openings 32, and the film thickness distribution along the direction in which the vapor deposition sources 22 are arranged is nonuniform. It has become. In the example shown in FIG. 11, the ratio of the difference between the maximum film thickness value and the minimum film thickness value with respect to the average value of the film thickness over the entire deposition surface 21a (that is, the variation in film thickness) is about 20%. Is not enough.

  That is, it is known that the film thickness distribution along the arrow L direction perpendicular to the scanning direction becomes non-uniform depending on the incident angle of the vapor deposition material diffused from the vapor deposition source 22 on the vapor deposition surface 21a. It is known that uneven brightness occurs due to a uniform film thickness distribution. That is, assuming that the tilt angle with respect to the axis perpendicular to the deposition surface 21a of the substrate 21 is Φ, the film thickness is reduced as Φ is increased by about 2 to the third power of cos Φ. Therefore, in order to make the film thickness distribution along the arrow L direction uniform to an allowable level, the above-described opening shape of the shielding member is further improved.

  Hereinafter, a film forming apparatus 40 according to a second embodiment of the present invention provided with a shielding member having an improved opening shape will be described with reference to FIGS. In this case as well, components that function in the same manner as the film forming apparatus 30 of the first embodiment described above are assigned the same reference numerals, and detailed descriptions thereof are omitted.

  As shown in FIGS. 14 and 15, the opening 41 of the shielding member incorporated in the film forming apparatus 40 in the present embodiment has a width in the arrow S direction as compared with the opening 32 of the first embodiment described above. Is narrowed, and is bent into a square shape so that both ends of the arrow S direction are recessed inward. The shape of this edge is only required to be devised to take the S-direction opening width according to the reciprocal of the above-mentioned cosΦ rule, and is not limited to the square shape but may be gently curved. Of these, at least one side should be narrow in the center in the arrow L direction.

  More specifically, as shown in FIG. 15, the opening 41 of the shielding member is designed so that the width in the arrow L direction is 360 mm, which is the same as the pitch of the vapor deposition source 22, and the width in the arrow S direction is 131.0 mm. The width along the arrow S direction at the center of the arrow L direction is designed to be 94.3 mm.

  In FIG. 16, the substrate 21 is stopped at the position where the five openings 23 a face the center of the substrate 21 in the direction of arrow S, and the vapor deposition material is diffused from each vapor deposition source 22 to pass through the above-described opening 41 of the shielding member. The film thickness distribution of the vapor deposition material when the vapor deposition material is formed on the deposition surface 21a is shown. FIG. 17 is a graph showing values obtained by integrating the film thickness distribution of FIG. 16 in the arrow S direction.

  According to this, it can be seen that the fluctuation of the film thickness distribution along the arrow L direction is smaller than the film thickness distribution of the first embodiment described in FIG. That is, by designing the width of the opening 41 along the arrow L direction to be narrow at the center as in the present embodiment, variations in the film thickness distribution depending on the irradiation angle of the vapor deposition material can be offset, and The film thickness of the vapor deposition material could be made more uniform over the entire vapor deposition surface 21a.

  Specifically, when the shielding member having the opening shape of the present embodiment is used, the incident angle with respect to the deposition surface 21a of the vapor deposition material can be about 16 ° at the maximum, and the film thickness maximum value with respect to the film thickness average value The ratio of the difference in the minimum film thickness could be within 5%. However, it is possible to further improve the film thickness uniformity by curving the opening shape of the shielding member in more detail in a substantially elliptical arc shape.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-described embodiments. For example, you may delete some components from all the components shown by embodiment mentioned above. Furthermore, you may combine the component covering different embodiment suitably.

1 is an external perspective view showing a vacuum envelope of an SED according to an embodiment of the present invention. FIG. 2 is a cross-sectional perspective view of the vacuum envelope of FIG. 1 cut along line II-II. The partial expanded sectional view which expands and shows the cross section of FIG. 2 partially. The schematic diagram which shows the state which divided | segmented the metal back of the phosphor screen of a front substrate inner surface into island shape. Schematic which shows an example of the general film-forming apparatus for forming a metal back. The figure which shows the film thickness distribution of the vapor deposition material along the arrangement direction of a vapor deposition source at the time of vapor-depositing a vapor deposition material on a to-be-deposited surface with the film-forming apparatus of FIG. The graph which shows the value which integrated the film thickness distribution of FIG. 6 in the scanning direction. BRIEF DESCRIPTION OF THE DRAWINGS Schematic which shows the structure of the principal part of the film-forming apparatus which concerns on 1st Embodiment of this invention. The figure which shows the opening shape of the shielding member integrated in the film-forming apparatus of FIG. The figure which shows the film thickness distribution of the vapor deposition material along the arrangement direction of a vapor deposition source at the time of vapor-depositing a vapor deposition material on the to-be-deposited surface with the film-forming apparatus of FIG. The graph which shows the value which integrated the film thickness distribution of FIG. 10 in the scanning direction. The figure which shows the opening shape of the shielding member which concerns on the modification of 1st Embodiment. The figure which shows the state which vapor-deposited the vapor deposition material on the to-be-deposited surface using the shielding member which has the opening shape of FIG. Schematic which shows the structure of the principal part of the film-forming apparatus which concerns on 2nd Embodiment of this invention. The figure which shows the opening shape of the shielding member integrated in the film-forming apparatus of FIG. The figure which shows the film thickness distribution of the vapor deposition material along the row direction of a vapor deposition source at the time of vapor-depositing a vapor deposition material on a to-be-deposited surface with the film-forming apparatus of FIG. The graph which shows the value which integrated the film thickness distribution of FIG. 16 in the scanning direction.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... SED, 2 ... Front substrate, 4 ... Back substrate, 6 ... Side wall, 8 ... Spacer, 10 ... Vacuum envelope, 12 ... Phosphor screen, 14 ... Metal back, 16 ... Electron emission element, 18 ... Wiring, DESCRIPTION OF SYMBOLS 21 ... Substrate, 21a ... Deposition surface, 22 ... Deposition source, 23 ... Partition member, 23a ... Opening part, 30, 40 ... Film-forming apparatus, 31 ... Shielding member, 32, 34, 41 ... Opening, L ... Arrangement direction , S: scanning direction, R, G, B: phosphor layers.

Claims (8)

Relatively moving a vapor deposition member having a flat vapor deposition surface and a plurality of vapor deposition sources arranged in parallel to be spaced apart from the vapor deposition surface in a scanning direction intersecting the alignment direction of the vapor deposition sources, In the film forming apparatus for forming a vapor deposition material on the deposition surface,
A plurality of cylindrical partition members that partition so that the vapor deposition material diffusing from each of the plurality of vapor deposition sources does not interfere between adjacent vapor deposition sources,
A plurality of openings each having a shape that defines a shape of a vapor deposition region in which a vapor deposition material is vapor-deposited on the surface to be vapor-deposited, each provided in an opening facing the surface to be vapor-deposited of each partition member spaced from each vapor deposition source. And a shielding member
The plurality of partition members and the plurality of shielding members are formed by depositing a deposition material on the deposition surface by moving the deposition target member and the plurality of deposition sources relative to each other in the scanning direction. Is formed into a structure that at least partially overlaps with the deposition surface.   The plurality of shielding members are related to the film thickness of the vapor deposition material formed on the deposition surface, and the film thickness of the part where the vapor deposition areas overlap is substantially the same as the film thickness of the part where the vapor deposition areas do not overlap. The film forming apparatus according to claim 1, wherein the film forming apparatus has an opening shape.   The openings of the plurality of shielding members have an area of a portion where adjacent vapor deposition regions overlap each other without relatively scanning the vapor deposition target member and a plurality of vapor deposition sources, and an area of a portion where no vapor deposition region exists. The film forming apparatus according to claim 2, wherein the film forming apparatus is formed in a shape that is substantially equal within a range of a length along the scanning direction.   The film forming apparatus according to claim 3, wherein the opening of each shielding member has a curved shape so that both ends of the shielding member in the arrangement direction protrude outward.   The film forming apparatus according to claim 3, wherein the opening of each shielding member has a shape bent so that both ends of the shielding member in the arrangement direction protrude outward.   The plurality of shielding members include a value obtained by integrating a film thickness of a portion where the vapor deposition regions overlap each other with respect to the film thickness of the vapor deposition material formed on the deposition surface, and a portion where the vapor deposition regions do not overlap with each other. The film forming apparatus according to claim 1, wherein the film forming apparatus has an opening shape that is substantially equal to a value obtained by integrating the film thickness in the scanning direction.   The openings of the respective shielding members are recessed inward at least one of the two ends in the scanning direction so as to uniformize the film thickness distribution along the alignment direction depending on the diffusion angle of the vapor deposition material. The film forming apparatus according to claim 1, wherein the film forming apparatus is provided.   The film forming apparatus according to claim 1, wherein the atmosphere during the film formation is a vacuum of E-3 Pa level.

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