JP2006175668A - Break pattern forming method and liquid ejection head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a break pattern forming method which facilitates cutting a silicon wafer into individual parts and can prevent the silicon wafer from being inadvertently broken in normal handling, and a liquid ejection head. <P>SOLUTION: A horizontal cutting line L1 is provided to the silicon wafer making the front surface 37 as a (110) face, in the surface direction of the first (111) surface 42 orthogonal to the (110) face. A penetration hole 40, which makes the first (111) face 42 as a long side and the second (111) face 43 crossing with the first (111) face 42 and orthogonal to the (110) face as a short side, is formed on the horizontal cutting line L1 by etching. In the forming process of the penetration hole, erosion by etching is stopped after the penetration of the silicon wafer in the width direction, before the edge of the third (111) face 44 tilting to the (110) face reaches the top point V of the acute angel part 46 of the penetration hole, to form the residual part 47 constituted of the third (111) face 44 on the acute angle part of the penetration hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a break pattern forming method for forming a break pattern by etching on a planned cutting line of a crystalline substrate such as a silicon wafer, and a liquid jet head.

  Examples of the liquid ejecting head that ejects liquid droplets from the nozzle openings by causing pressure fluctuations in the liquid in the pressure generating chamber include, for example, an ink jet recording head used in an image recording apparatus such as a printer (hereinafter simply referred to as a recording head). , Color material jet heads used in the manufacture of color filters such as liquid crystal displays, electrode material jet heads used for forming electrodes such as organic EL (Electro Luminescence) displays, FED (surface emitting displays), biochips (biochemical elements) There are bio-organic matter ejecting heads used in the manufacture of

  Taking the case of the recording head as an example, a nozzle forming member having a plurality of nozzle openings, a flow path forming member that forms a liquid flow path including a pressure generation chamber that communicates with the nozzle openings, and pressure applied to the liquid in the pressure generation chamber The actuator unit is provided with a pressure generating element for imparting fluctuations. These constituent members, particularly the flow path forming member, are required to be improved in processing density and processing accuracy in order to cope with higher recording image density and higher recording operation speed. Therefore, as the material of the flow path forming member, a base material having crystallinity such as silicon that can form a fine shape with high dimensional accuracy by etching is preferably used.

  When a flow path forming member is manufactured using silicon as a base material, for example, a plurality of regions to be flow path forming members are partitioned on a substantially circular silicon wafer, and a portion to be a liquid flow path is formed in each region. It is formed by etching. Similarly, a plurality of small through holes are formed on the planned cutting line by etching to form a break pattern. In this break pattern, a portion between adjacent through holes becomes a weak portion, and when an external force is applied, this portion is broken and divided into a plurality of parts. Thereby, a plurality of channel formation members can be obtained from one silicon wafer (for example, refer to patent documents 1).

  As described above, in the case where a recording head component is manufactured from a silicon wafer, the number of flow path forming members obtained from one silicon wafer is limited, and thus a surface area capable of obtaining more flow path forming members. It is desirable to use a larger silicon wafer. For example, in the example of the recording head described above, a silicon wafer having a diameter of 4 inches (about 10 cm) has been mainstream, but recently, a wafer having a diameter of 6 inches (15 cm) may be used.

JP 2004-181947 A

  By the way, the thickness of the silicon wafer becomes the thickness of the flow path forming member as it is, and is constant regardless of the diameter of the silicon wafer (for example, 400 μm). However, if the diameter of the silicon wafer is increased without changing the thickness, the degree of force acting on the break pattern changes due to the aspect ratio. Specifically, the force acting on the break pattern is likely to increase. As a result, for example, when the silicon wafer is transported after the break pattern is created, there may be a problem that the break pattern is carelessly broken due to some external force during the handling of the silicon wafer.

  The present invention has been made in view of such circumstances, and its purpose is to be able to be easily cut when divided into individual parts, and to be difficult to break carelessly during normal handling. Another object of the present invention is to provide a break pattern forming method and a liquid jet head that can be used.

The break pattern forming method of the present invention has been proposed in order to achieve the above object, and is a silicon wafer having a (110) surface as a surface, on a (110) surface, and on the (110) surface. Set a planned cutting line in the plane direction of the first (111) plane that is orthogonal,
Through-holes having the first (111) plane as a long side by etching and the second (111) plane intersecting the first (111) plane and orthogonal to the (110) plane as a short side Is a break pattern forming method of forming a break pattern on the planned cutting line,
In the process of forming the through hole, after the penetration in the thickness direction of the silicon wafer, before the edge of the third (111) plane inclined with respect to the (110) plane reaches the apex of the acute angle portion of the through hole, The remaining portion constituted by the third (111) plane is formed at the acute angle portion of the through hole by stopping the erosion by etching.

  According to the above configuration, the remaining part formed at the acute angle part of the through hole reinforces the break pattern, so that it is difficult to break carelessly during normal handling while ensuring easy division into individual parts. It becomes possible to do.

  In the above configuration, the ratio of the sum of the distance in the planned cutting line direction between the apexes of the acute angle portions in adjacent through holes and the width in the planned cutting line direction of the remaining portion to the total extension of the planned cutting line is 10 to 12%. It is desirable that

  According to this configuration, since the width of the remaining portion in the direction of the planned cutting line is defined according to the total length of the planned cutting line, the break pattern can be set to a more optimal strength.

  In the liquid jet head according to the present invention, a break pattern forming method having any one of the above-described configurations is formed, in which a portion serving as a liquid flow path of at least one of the pressure generation chambers leading to a nozzle opening for discharging a common liquid chamber liquid is formed. A flow path forming member obtained by cutting a break pattern formed on the silicon wafer with a planned cutting line, and a pressure generating element serving as a driving source for discharging the liquid in the pressure generating chamber from the nozzle opening. It is characterized by that.

  The best mode for carrying out the present invention will be described below with reference to the accompanying drawings. In the embodiments described below, various limitations are made as preferred specific examples of the present invention. However, the scope of the present invention is not limited to the following description unless otherwise specified. However, the present invention is not limited to these embodiments. In the following description, an ink jet recording head (hereinafter simply referred to as a recording head) mounted on an ink jet recording apparatus (a type of liquid ejecting apparatus; hereinafter simply referred to as a printer) is taken as an example of the liquid ejecting head of the present invention. To do.

  FIG. 1 is a schematic perspective view of a recording head 1 in the present embodiment, and FIG. The illustrated recording head 1 includes a cartridge base 2 (hereinafter referred to as “base”), a drive substrate 5, a case 10, a flow path unit 11, and an actuator unit 13 as main components. The base 2 is molded from, for example, a synthetic resin such as an epoxy resin, and a plurality of ink introduction needles 4 are attached to the upper surface of the base 2 with a filter 3 interposed therebetween. These ink introduction needles 4 are fitted with ink cartridges (not shown) that store ink.

  The drive substrate 5 is provided with a wiring pattern for supplying a drive signal from the printer main body (not shown) to the piezoelectric vibrator 19 and a connector 6 for connection with the printer main body, a resistor, a capacitor, etc. The electronic parts 8 and the like are mounted. A wiring member such as an FFC (flexible flat cable) is connected to the connector 6, and the driving substrate 5 receives a driving signal from the printer main body side via the FFC. The driving substrate 5 is disposed on the bottom surface side of the base 2 opposite to the ink introduction needle 4 with a sheet 7 functioning as a packing interposed.

  The case 10 is a hollow box-shaped member made of synthetic resin, the flow path unit 11 is joined to the front end surface (lower surface), the actuator unit 13 is accommodated in the accommodation space 12 formed inside, The drive substrate 5 is attached to the substrate attachment surface 14 on the side opposite to the flow path unit 11 side. A head cover 16 made of a metal thin plate member is attached to the front end surface side of the case 10 so as to surround the peripheral edge portion from the outside of the flow path unit 11. The head cover 16 functions to protect the flow path unit 11 and the case 10 and adjust the nozzle plate 25 of the flow path unit 11 to the ground potential to prevent troubles such as noise caused by static electricity generated from recording paper or the like. .

  The actuator unit 13 includes a plurality of piezoelectric vibrators 19 (a kind of pressure generating elements) arranged in a comb shape, a fixed plate 20 to which the piezoelectric vibrators 19 are joined, and driving from the driving substrate 5. A wiring member 21 such as a TCP (tape carrier package) for transmitting a signal to the piezoelectric vibrator 19 is formed. Each piezoelectric vibrator 19 has a fixed end portion bonded to the fixed plate 20, and a free end portion protruding outward from the front end surface of the fixed plate 20. That is, each piezoelectric vibrator 19 is mounted on the fixed plate 20 in a so-called cantilever state. The fixing plate 20 that supports each piezoelectric vibrator 19 is made of, for example, stainless steel having a thickness of about 1 mm. The actuator unit 13 is housed and fixed in the housing space 12 by bonding the back surface of the fixed plate 20 to the inner wall surface of the case that defines the housing space 12.

  The flow path unit 11 is manufactured by joining and integrating with an adhesive or the like in a state where the elastic plate 23, the flow path forming substrate 24 (corresponding to the flow path forming member in the present invention), and the nozzle plate 25 are laminated. A series of ink flow paths from the common ink chamber 27 (corresponding to the common liquid chamber in the present invention) to the nozzle opening 30 through the ink supply port 28 and the pressure generating chamber 29 (corresponding to the liquid flow path in the present invention). ) Is a member formed. The flow path forming substrate 24 divides a portion that becomes an ink flow path, specifically, a void portion that becomes a common ink chamber 27, a groove portion that becomes an ink supply port 28, and a void portion that becomes a pressure generation chamber 29 by partition walls. In this state, a plurality of plate-like members are formed corresponding to the nozzle openings 30 opened in the nozzle plate 25. In the present embodiment, the flow path forming substrate 24 is manufactured by etching a silicon wafer that is a base material having crystallinity.

  The pressure generation chamber 29 is formed as an elongated chamber in a direction perpendicular to the direction in which the nozzle openings 30 are arranged (nozzle row direction). The common ink chamber 27 is a chamber into which ink from the side of the ink introduction needle 4 inserted into the ink cartridge is introduced. The ink introduced into the common ink chamber 27 is supplied to each pressure generating chamber 29 through the ink supply port 28. The elastic plate 23 is a composite plate material having a double structure in which an elastic film is laminated on a metal support plate such as stainless steel. An island 32 for joining the tip of the free end of the piezoelectric vibrator 19 is formed in a portion corresponding to the pressure generating chamber 29 of the elastic plate 23, and this portion functions as a diaphragm portion. Further, the elastic plate 23 seals one opening surface of the empty portion that becomes the common ink chamber 27 and also functions as the compliance portion 33. A portion corresponding to the compliance portion 33 is made of only an elastic film.

  In the recording head 1, when a driving signal is supplied from the driving substrate 5 through the wiring member 21, the piezoelectric vibrator 19 expands and contracts in the longitudinal direction of the element, and accordingly, the island portion 32 moves into the pressure generating chamber 29. Move in the direction of approaching or separating. As a result, the volume of the pressure generating chamber 29 changes, and the pressure in the ink in the pressure generating chamber 29 varies. An ink droplet (a kind of droplet) is ejected from the nozzle opening 30 by this pressure fluctuation.

  FIG. 3 is a plan view of a silicon wafer 35 that is a material of the flow path forming substrate 24. The silicon wafer 35 is a silicon single crystal substrate having a surface 37 set to a crystal orientation plane (110) plane and a thickness set to 400 μm, which is equal to the thickness of the flow path forming substrate 24. On the surface 37 of the silicon wafer 35, a plurality of (in this embodiment, 10 locations) substrate regions 24 ′ to be the flow path forming substrate 24 are partitioned, and the portions to be the ink flow paths are formed in each region by etching. Similarly, a plurality of elongated small holes 40 (see FIG. 4 and the like) are formed on the horizontal cutting line L1 by etching, and a plurality of through holes are formed on the vertical cutting line L2 orthogonal to the horizontal cutting line L1. To form a break pattern. A horizontal cutting line L1 (corresponding to a planned cutting line in the present invention) in FIG. 3 is set on the (110) plane and in the plane direction of the first (111) plane orthogonal to the (110) plane. Yes. Further, the vertical cutting line L2 in the vertical direction is set in the axial direction perpendicular to the first (111) plane. Note that the first (111) plane constitutes an orientation flat (so-called orientation flat) OF which serves as a reference plane in the etching process.

  FIG. 4 is a partially enlarged view illustrating the configuration of the break pattern formed on the horizontal cutting line L1 in the silicon wafer 35. As shown in FIG. In this embodiment, the thin portion 41 thinner than other portions is provided by etching the periphery of the break pattern halfway in the thickness direction of the silicon wafer 35 (so-called half-etching). In the horizontal cutting line L1, a portion separating adjacent through holes 40 becomes a weakened portion 48, and a plurality of the weakened portions 48 and the through holes 40 are alternately arranged to form a break pattern. The through hole 40 in this break pattern has a first (111) plane 42 as a long side, a second (111) plane 43 that intersects the first (111) plane 42 and is orthogonal to the (110) plane. It is formed in an elongated parallelogram shape with a short side. The second (111) plane 43 intersects the first (111) plane 42 at an angle of about 70 ° on the (110) plane (surface 37). The shape of the through hole 40 is an example, and is not limited to the illustrated one.

  When an external force is applied to the silicon wafer 35 on which such a break pattern is formed, the fragile portion 48 in the break pattern is broken and is divided into individual flow path forming substrates 24. In this embodiment, as a method of dividing the silicon wafer 35 by cutting with a break pattern, a sheet member having extensibility is attached to the surface of the silicon wafer 35 before the division, and this sheet member is attached to the surface of the silicon wafer 35. A so-called expanded break is employed in which the break pattern is broken by extending radially in the direction. This expand break will be described later.

  As described above, in the case where a plurality of flow path forming substrates 24 are manufactured from the silicon wafer 35 by etching, it is difficult to inadvertently break during normal handling after the break pattern is formed and before the expanded break is performed. Therefore, when dividing into individual flow path forming substrates 24, it is important to enable reliable cutting with a break pattern. For this reason, in the present embodiment, the above two conditions are achieved by devising the shape of the through hole in the break pattern.

  Specifically, when the surface 37 of the silicon wafer 35, that is, the (110) plane is eroded by etching, a third (111) plane 44 inclined with respect to the (110) plane appears, but the silicon wafer 35 After the penetration in the thickness direction, the erosion is stopped halfway before the edge of the third (111) surface 44 reaches the apex of the acute angle portion 46 of the through hole 40, thereby causing the acute angle portion 46 of the through hole 40 to A part of the third (111) surface 44 is intentionally left as the remaining portion 47. By adjusting the size of the remaining portion 47, the strength of the fragile portion 48 between the adjacent through holes 40 can be set to an optimum strength capable of satisfying both of the above two conditions. Hereinafter, this point will be described in more detail.

FIGS. 5A to 5E are state transition diagrams for explaining the formation process of the through hole 40 in the break pattern of FIG. 4, and FIGS. 6A to 6E are A-A in each state of FIG. FIG. In order to produce the break pattern, first, a silicon oxide film (SiO ₂ ) 49 having a thickness of about 1 μm to 2 μm is formed on the surface 37 (front and back (110) surfaces) of the silicon wafer 35 by thermal oxidation. (Hereinafter simply referred to as the oxide film 49). The method for forming the oxide film 49 is not limited to the illustrated method, and other methods such as CVD (chemical vapor deposition) or ion implantation may be employed. In addition to the silicon oxide film, a so-called p-type silicon film to which boron or gallium atoms are added, or an n-type silicon film to which arsenic or antimony atoms are added may be formed. Thereafter, using a resin resist, a resist pattern having an opening corresponding to the through hole 40 is provided, and the oxide film 49 exposed in the opening is removed with an etching solution such as a hydrofluoric acid (so-called hydrofluoric acid) solution. Thus, as shown in FIGS. 5A and 6A, a mask pattern for etching is formed.

  If the mask pattern by the oxide film 49 is formed, for example, an etching solution made of a potassium hydroxide (KOH) aqueous solution adjusted to a temperature of 78 ° C. and a concentration of 20% by weight is used, and the surface 37 (front side and The back side (110) plane) is anisotropically etched (first etching step). When the first etching process is started, as shown in FIGS. 5B and 6B, a third (111) plane 44 inclined by about 30 degrees with respect to the surface 37 ((110) plane) is formed. Appear. Etching erosion proceeds simultaneously from the front side and the back side in the direction perpendicular to the third (111) plane 44, and after a while, penetrates the thickness direction of the silicon wafer 35 (FIG. 5 (c), FIG. 6 (c)). In the present embodiment, this first etching step is performed for 160 to 180 minutes.

  Next, the thin portion 41 is formed around the through hole 40 simultaneously with the formation of the through hole 40. Therefore, as shown in FIGS. 5D and 6D, after removing the oxide film 49 in the portion where the thin portion 41 is formed, the etching is further advanced (second etching step). In this second etching step, a potassium hydroxide aqueous solution adjusted to a temperature of 78 ° C. and a concentration of 37% by weight is used until the depth of the thin portion 41 from the surface 37 becomes 80 μm. When the etching is stopped at this timing, the edge EG of the third (111) surface 44 is at the apex V of the acute angle portion 46 of the through hole 40 as shown in FIGS. 5 (e) and 6 (e). Erosion stops before it reaches. As a result, a remaining portion 47 composed of the third (111) surface 44 is formed in the acute angle portion 46.

The remaining portion 47 serves to reinforce the fragile portion 48 in the break pattern. By adjusting the size of the remaining portion 47 in accordance with the total extension Lt (see FIG. 3) of the transverse cutting line L1, the break pattern can be set to an optimum intensity. Specifically, as shown in FIG. 4, the distance (width of the fragile portion 48) between the acute corner vertices V in the adjacent through holes 40 in the direction of the transverse cutting line L 1 is La, and the transverse cutting line L 1 of the remaining portion 47. Assuming that the width in the direction is Lb and the number of the fragile portions 48 in the transverse cutting line L1 is n, the ratio of the sum of the width La of the fragile portion 48 and the width Lb of the remaining portion 47 in the transverse cutting line L1 to the total extension Lt is The width Lb of the remaining portion 47 is adjusted so as to be 10 to 12%. That is, the etching time of the first etching step is set so as to satisfy the following formula (1).
{La + (Lb × 2)} × n = 0.1 to 0.12 (1)
Actually, when the length of the total extension Lt is 12600 μm, the width Lb of the remaining portion 47 is 10 to 30 μm. Note that the size of the remaining portion 47 is not limited to the time, but can be adjusted by changing the concentration and temperature of the etching solution.

In this way, when the width Lb of the remaining portion 47 is defined according to the total extension Lt, the width Lb of the remaining portion 47 becomes smaller at the transverse cutting line L1 where the total extension Lt is relatively short, while the total extension Lt However, the width Lb of the remaining portion 47 becomes larger at the relatively long horizontal cutting line L1.
Here, the force acting on the fragile portion 48 when an external force is applied to the silicon wafer 35 varies depending on the length of the total extension Lt of the transverse cutting line L1, and the longer the total extension Lt, the more the individual fragile portions 48 are affected. The acting force is large, and the force acting on each fragile portion 48 tends to be smaller as the total extension Lt is shorter. Therefore, if the width Lb of the remaining portion 47 is adjusted based on the total extension Lt, the break pattern (fragile portion 48) can be set to a more optimal strength. That is, the strength of the fragile portion 48 in the break pattern can be made uniform regardless of the length of the total extension Lt of the transverse cutting line L1.

If a break pattern is formed through the above steps, the silicon wafer 35 is then cut by the break pattern by the break, and divided into individual parts (channel formation substrate 24) (expand break step).
FIG. 7 is a schematic diagram for explaining this expanding break process. In the expanding break process, first, a sheet member 51 (dicing tape) having extensibility is attached to the surface of the silicon wafer 35 on which the break pattern is formed. A ring-shaped holding ring 52 whose inner diameter is set larger (for example, 180 mm) than the outer diameter (for example, 150 mm) of the silicon wafer 35 is attached to the peripheral portion of the sheet member 51.

  Then, as shown in FIG. 7A, the silicon wafer 35 in a state where the sheet member 51 is adhered is placed on the table 53, and the inner diameter thereof is aligned with the holding ring 52 above it. An expanding ring 54 is arranged. When the expand ring 54 is lowered in this state, the expand ring 54 comes into contact with the holding ring 52. Thereafter, when the expand ring 54 is further lowered, as shown in FIG. 7B, the sheet member 51 expands and the silicon wafer 35 is pulled radially from the center. As a result, the silicon wafer 35 is cut by the break pattern and divided into individual flow path forming substrates 24.

  As described above, when the remaining portion 47 is provided at the acute angle portion 46 of the through-hole 40 in the break pattern, the remaining portion 47 reinforces the break pattern, so that it is easy to divide into individual parts in the expanding break process. However, it is possible to prevent the silicon wafer 35 from being carelessly cracked during normal handling other than the expanding break process. In addition, since the size (width Lb) of the remaining portion 47 is adjusted according to the total extension Lt of the transverse cutting line L1, the break pattern can be set to a more optimal strength.

  By the way, the present invention is not limited to the above-described embodiment, and various modifications can be made based on the description of the scope of claims.

In the above, an example in which the flow path forming substrate 24 of the recording head 1 is manufactured using the silicon wafer 35 has been described. However, the present invention is not limited to this. For example, when a semiconductor element or the like is manufactured using a silicon wafer. The present invention can be applied.
Further, the base material of the flow path forming substrate 24 is not limited to the silicon wafer 35, and other base materials having crystallinity can also be used.

  In the above description, the ink jet recording head 1 has been described as an example of the liquid ejecting head, but the present invention can also be applied to other liquid ejecting heads. For example, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an electrode material ejecting head used for forming an electrode such as an organic EL (Electro Luminescence) display, an FED (surface emitting display), a biochip (biochemical element) The present invention can also be applied to bioorganic matter ejecting heads and the like used in the production of

FIG. 2 is an exploded perspective view illustrating a configuration of a recording head. FIG. 3 is a cross-sectional view of a main part for explaining the configuration of a recording head. It is a top view of the silicon wafer used as the material of a channel formation substrate. It is a partially expanded view explaining the structure of the break pattern formed on the horizontal cutting line in a silicon wafer. (A)-(e) is a state transition diagram explaining the formation process of the through-hole in the break pattern of FIG. (A)-(e) is the sectional view on the AA 'line in each state of FIG. (A), (b) is a schematic diagram explaining an expanded break process.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Recording head, 2 Cartridge base, 3 Filter, 4 Ink introduction needle, 5 Driving substrate, 6 Connector, 7 Sheet, 8 Electronic component, 10 Case, 11 Flow path unit, 12 Housing empty part, 13 Actuator unit, 14 Substrate mounting surface, 16 head cover, 19 piezoelectric vibrator, 20 fixed plate, 21 flexible cable, 23 elastic plate, 24 flow path forming substrate, 25 nozzle plate, 27 common ink chamber 28 ink supply port, 29 pressure generating chamber, 30 nozzle Aperture, 32 islands, 35 silicon wafer, 37 silicon wafer surface, 40 through-hole, 42 first (111) surface, 43 second (111) surface, 44 third (111) surface, 46 acute angle portion , 47 Remaining part, 48 Fragile part, 49 Oxide film, 51 Sheet member, 52 Retaining ring, 53 Te Table, 54 Expanding ring

Claims (3)

A cutting planned line is set in the surface direction of the first (111) plane that is on the (110) plane and orthogonal to the (110) plane, on the silicon wafer having the surface as the (110) plane,
Through-holes having the first (111) plane as a long side by etching and the second (111) plane intersecting the first (111) plane and orthogonal to the (110) plane as a short side Is a break pattern forming method of forming a break pattern on the planned cutting line,
In the process of forming the through hole, after the penetration in the thickness direction of the silicon wafer, before the edge of the third (111) plane inclined with respect to the (110) plane reaches the apex of the acute angle portion of the through hole, A break pattern forming method, wherein a remaining portion constituted by the third (111) plane is formed at an acute angle portion of a through hole by stopping erosion by etching.   The ratio of the sum of the distance in the planned cutting line direction between the acute corner vertices in the adjacent through holes and the width in the planned cutting line direction of the remaining part to the total extension of the planned cutting line is 10 to 12%. The break pattern forming method according to claim 1, wherein: A portion serving as a liquid flow path of at least one of the pressure generating chambers leading to the nozzle opening for discharging the common liquid chamber liquid is formed, and is formed on the silicon wafer by the break pattern forming method according to claim 1 or 2. And a flow path forming member obtained by cutting the break pattern along a planned cutting line, and a pressure generating element serving as a driving source for discharging the liquid in the pressure generating chamber from the nozzle opening. Jet head.

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