JP4529692B2 - Method for dividing crystalline substrate and method for manufacturing liquid jet head - Google Patents

Description

  The present invention is a method for dividing a crystalline substrate, for example, by setting a planned cutting line on a substrate having crystallinity, such as a silicon wafer, and cutting the substrate from the planned cutting line and dividing it into a plurality of parts, and The present invention relates to a liquid jet head using the crystalline substrate.

  Examples of the liquid ejecting head that ejects liquid droplets from the nozzle openings by causing pressure fluctuations in the liquid in the pressure generating chamber include, for example, an ink jet recording head used in an image recording apparatus such as a printer (hereinafter simply referred to as a recording head). , Color material jet heads used in the manufacture of color filters such as liquid crystal displays, electrode material jet heads used for forming electrodes such as organic EL (Electro Luminescence) displays, FED (surface emitting displays), biochips (biochemical elements) There are bio-organic matter ejecting heads used in the manufacture of

  Taking the case of the recording head as an example, a nozzle plate having a plurality of nozzle openings, a flow path forming member that forms a liquid flow path including a pressure generation chamber that leads to the nozzle openings, and the pressure in the liquid in the pressure generation chamber The actuator unit is provided with a pressure generating element for imparting fluctuations. These constituent members, particularly the flow path forming member, are required to be improved in processing density and processing accuracy in order to cope with higher recording image density and higher recording operation speed. Therefore, as a material for the flow path forming member, for example, silicon capable of forming a fine shape with high dimensional accuracy is preferably used.

  When producing a flow path forming member using silicon as a base material, a plurality of areas to be flow path forming members are defined on a substantially circular silicon wafer, and a portion to be a liquid flow path is formed by etching in each area. Further, after assembling other constituent members such as a nozzle plate in a portion to be a flow path forming member, the silicon wafer is cut along a planned cutting line and divided into individual parts. As a method for dividing a silicon wafer, for example, there is a method using a cutting machine such as a dicer (for example, refer to Patent Document 1), and a method for cutting and dividing by irradiating a laser beam along a planned cutting line (for example, , See Patent Document 2). Also, there is a method in which a plurality of small through holes are formed by etching on the planned cutting line to form a break pattern, and the break pattern is broken by applying an external force to the silicon wafer and divided into a plurality of parts (for example, Patent Document 3). Thereby, a plurality of flow path forming members can be obtained from one silicon wafer.

JP 2002-373869 A JP 2002-172479 A JP 2004-181947 A

  However, in the dividing methods disclosed in Patent Document 1 and Patent Document 2, since processing scraps called dross and debris are generated during split processing, in addition to requiring measures to prevent the processing scraps from adhering to parts, lubrication It is necessary to use a liquid such as oil (grinding fluid) or cooling water, and this liquid may contaminate or damage the parts. In addition, the dividing method using a cutting machine as in Patent Document 1 has a problem that it is difficult to cut a complicated shape, for example, when a region to be a flow path forming member is partitioned in a staggered pattern on a silicon wafer. It was. In addition, the dividing method using a laser as in Patent Document 2 has a problem that it takes a long time to completely cut.

  In addition, in the dividing method using etching as in Patent Document 3, generally, wet etching using an etching solution is performed. In this case, it is necessary to mask other than the portion to be etched, and the etching solution. However, there is a problem that the process is more complicated than those disclosed in Patent Document 1 and Patent Document 2 because it requires fine management of the temperature and concentration and the etching time. Furthermore, a method using dry etching in which etching is performed with an etching gas excited by applying a high-frequency voltage is also conceivable, but it is not practical because it requires more time for processing than wet etching.

  The present invention has been made in view of such circumstances, and its purpose is to reduce the amount of processing as much as possible and to ensure the ease of division while shortening the processing time and reducing processing waste. It is another object of the present invention to provide a method for dividing a crystalline substrate and a liquid jet head.

The method for dividing a crystalline base material of the present invention is proposed in order to achieve the above object, and a cutting line is set on the surface of the base material having crystallinity, and cutting is performed along the cutting line. A method for dividing a crystalline base material, wherein a plurality of base points are formed, and the base material is cut along a planned cutting line from the cutting base point to divide the base material into a plurality of parts,
When the planned cutting line is set in the crystal orientation direction, the number of cutting base points on the planned cutting line is sparse,
When the planned cutting line is set to intersect with the crystal orientation plane on the surface of the base material, the number of cutting base points in the planned cutting line is compared with the case where the planned cutting line is set in the crystal orientation plane direction. It is characterized by being dense.

  According to the above configuration, in the planned cutting line set in the crystal orientation plane direction, the number of cutting base points formed is sparse, and in the planned cutting line set in a state intersecting with the crystal orientation plane, the number of cutting base points formed is cut. Since the planned line is denser than when the crystal orientation plane is set, the cutting line is reduced when dividing the base material while minimizing the processing amount to shorten the processing time and reduce processing waste. It becomes possible to cut along with.

  In addition, even when the base material is divided into parts having a relatively complicated shape, it is only necessary to form the cutting base point along the shape of the part, so that the degree of freedom of the divided shape can be secured more widely. .

  The said structure WHEREIN: It is desirable for the said cutting | disconnection base point to be comprised by the through-hole penetrated the thickness direction of the said base material.

  Moreover, the structure which made the said cutting | disconnection base point into the hollow drilled to the middle of the thickness direction of the said base material can also be employ | adopted.

  According to this configuration, it is not necessary to completely penetrate the substrate for processing the cutting base point, so that the processing time can be further shortened and the generation of processing waste can be further reduced.

  The said structure WHEREIN: The said cutting | disconnection origin may be comprised by the weak part formed by condensing a laser beam inside the said base material and damaging only a condensing part.

  According to this configuration, since the cutting base point is formed only inside the base material, it is possible to more reliably prevent the generation of processing waste.

Further, the method for dividing a crystalline base material according to the present invention is a crystal in which a groove to be cut is formed in a base material having crystallinity, and the base material is cut along the planned cutting groove to be divided into a plurality of parts. A method for dividing a functional substrate,
When the cutting planned groove is set in the crystal orientation direction, the depth of the cutting planned groove is made shallower,
When the planned cutting groove is set to intersect the crystal orientation plane, the depth of the planned cutting groove is set deeper than when the planned cutting groove is set in the crystal orientation plane direction.

  According to the above configuration, the depth of the cutting planned groove set in the crystal orientation plane direction is made shallower, and the depth of cutting the cutting planned groove set in a state intersecting with the crystal orientation plane is set to Since it is deeper than the case where it is set in the direction of the crystal orientation plane, the processing amount can be minimized and processing time can be shortened and processing waste can be reduced. It is possible to cut it.

  In addition, the liquid ejecting head according to the invention includes the above-described structures each having a crystalline base material in which a portion serving as the liquid flow path of at least one of the pressure generation chambers leading to the common liquid chamber or the nozzle opening for discharging the liquid is formed. It is characterized by comprising a flow path forming member obtained by dividing by the method for dividing a crystalline substrate.

  The best mode for carrying out the present invention will be described below with reference to the accompanying drawings. In the embodiments described below, various limitations are made as preferred specific examples of the present invention. However, the scope of the present invention is not limited to the following description unless otherwise specified. However, the present invention is not limited to these embodiments. In the following description, an ink jet recording head (hereinafter simply referred to as a recording head) mounted on an ink jet recording apparatus (a type of liquid ejecting apparatus; hereinafter simply referred to as a printer) is taken as an example of the liquid ejecting head of the present invention. To do.

  FIG. 1 is a schematic perspective view of a recording head 1 in the present embodiment, and FIG. The illustrated recording head 1 includes a cartridge base 2 (hereinafter referred to as “base”), a drive substrate 5, a case 10, a flow path unit 11, and an actuator unit 13 as main components. The base 2 is molded from, for example, a synthetic resin such as an epoxy resin, and a plurality of ink introduction needles 4 are attached to the upper surface of the base 2 with a filter 3 interposed therebetween. These ink introduction needles 4 are fitted with ink cartridges (not shown) that store ink.

  The drive substrate 5 is provided with a wiring pattern for supplying a drive signal from the printer main body (not shown) to the piezoelectric vibrator 19 and a connector 6 for connection with the printer main body, a resistor, a capacitor, etc. The electronic parts 8 and the like are mounted. A wiring member such as an FFC (flexible flat cable) is connected to the connector 6, and the driving substrate 5 receives a driving signal from the printer main body side via the FFC. The driving substrate 5 is disposed on the bottom surface side of the base 2 opposite to the ink introduction needle 4 with a sheet 7 functioning as a packing interposed.

  The case 10 is a hollow box-shaped member made of synthetic resin, the flow path unit 11 is joined to the front end surface (lower surface), the actuator unit 13 is accommodated in the accommodation space 12 formed inside, The drive substrate 5 is attached to the substrate attachment surface 14 on the side opposite to the flow path unit 11 side. A head cover 16 made of a metal thin plate member is attached to the front end surface side of the case 10 so as to surround the peripheral edge portion from the outside of the flow path unit 11.

  The actuator unit 13 includes a plurality of piezoelectric vibrators 19 (a kind of pressure generating elements) arranged in a comb-like shape, a fixing plate 20 to which the piezoelectric vibrators 19 are joined, and a drive for the piezoelectric vibrators 19. A wiring member 21 such as a TCP (tape carrier package) for transmitting a drive signal from the substrate 5 is formed. Each piezoelectric vibrator 19 has a fixed end portion bonded to the fixed plate 20, and a free end portion protruding outward from the front end surface of the fixed plate 20. That is, each piezoelectric vibrator 19 is mounted on the fixed plate 20 in a so-called cantilever state. The fixing plate 20 that supports each piezoelectric vibrator 19 is made of, for example, stainless steel having a thickness of about 1 mm. The actuator unit 13 is housed and fixed in the housing space 12 by bonding the back surface of the fixed plate 20 to the inner wall surface of the case that defines the housing space 12.

  The flow path unit 11 is manufactured by joining and integrating with an adhesive or the like in a state where the elastic plate 23, the flow path forming substrate 24 (corresponding to the flow path forming member in the present invention), and the nozzle plate 25 are laminated. A series of ink flow paths from the common ink chamber 27 (corresponding to the common liquid chamber in the present invention) to the nozzle opening 30 through the ink supply port 28 and the pressure generating chamber 29 (corresponding to the liquid flow path in the present invention). ) Is a member formed. The flow path forming substrate 24 is a pressure generation chamber 29 that communicates with a portion that becomes an ink flow path, specifically, an empty portion that becomes a common ink chamber 27, a groove portion that becomes an ink supply port 28, and a nozzle opening that discharges liquid. A plurality of plate-like members are formed in correspondence with the nozzle openings 30 provided in the nozzle plate 25 in a state where the empty space is partitioned by the partition walls. In the present embodiment, the flow path forming substrate 24 is produced by etching a silicon wafer. In this embodiment, the flow path forming substrate 24 is configured to include both the pressure generation chamber 29 and the common ink chamber 27. In short, at least one ink of the common ink chamber 27 or the pressure generation chamber 29 is used. Any structure may be used as long as a portion to be a flow path is formed. For example, the common ink chamber 27 may be formed by a member different from the flow path forming substrate 24.

  The pressure generation chamber 29 is formed as an elongated chamber in a direction perpendicular to the direction in which the nozzle openings 30 are arranged (nozzle row direction). The common ink chamber 27 is a chamber into which ink from the side of the ink introduction needle 4 inserted into the ink cartridge is introduced. The ink introduced into the common ink chamber 27 is supplied to each pressure generating chamber 29 through the ink supply port 28. The elastic plate 23 is a composite plate material having a double structure in which an elastic film is laminated on a metal support plate such as stainless steel. An island 32 for joining the tip of the free end of the piezoelectric vibrator 19 is formed in a portion corresponding to the pressure generating chamber 29 of the elastic plate 23, and this portion functions as a diaphragm portion. Further, the elastic plate 23 seals one opening surface of the empty portion that becomes the common ink chamber 27 and also functions as the compliance portion 33. A portion corresponding to the compliance portion 33 is made of only an elastic film.

  In the recording head 1, when a driving signal is supplied from the driving substrate 5 through the wiring member 21, the piezoelectric vibrator 19 expands and contracts in the longitudinal direction of the element, and accordingly, the island portion 32 moves into the pressure generating chamber 29. Move in the direction of approaching or separating. As a result, the volume of the pressure generating chamber 29 changes, and the pressure in the ink in the pressure generating chamber 29 varies. An ink droplet (a kind of droplet) is ejected from the nozzle opening 30 by this pressure fluctuation.

  FIG. 3 is a plan view of a silicon wafer 35 that serves as a base material of the flow path forming substrate 24. The illustrated silicon wafer 35 is a silicon single crystal substrate whose thickness is set to 400 μm, which is equal to the thickness of the flow path forming substrate 24, and its surface 37 is set to a crystal orientation plane (110) plane. Further, the first (111) plane orthogonal to the (110) plane constitutes an orientation flat (OF) serving as a reference plane in the etching process. Like the silicon wafer 35, a substrate having crystallinity tends to break along the closest crystal orientation plane when the external force is applied or an impact is applied, for example, In the case of the face-centered cubic structure (FCC structure) like the silicon wafer 35, it is easy to break along the (111) plane, and in the case of the body-centered cubic structure (BCC structure), it is easy to break along the (110) plane. In the case of the silicon wafer 35 of the present embodiment, as shown in FIG. 4, the first (111) plane (A in FIG. 4) and an angle of about 70 degrees with respect to the first (111) plane. At the same time, it easily breaks along the second (111) plane (FIG. B) perpendicular to the (110) plane (surface 37). In addition, FIG. 4 shows an example to the last, and is not necessarily broken as in this example.

  In the present embodiment, a planned cutting line L1 in the horizontal direction is set on the surface 37 of the silicon wafer 35 in the first (111) plane direction, and a cutting plan in the vertical direction perpendicular to the planned cutting line L1 is set. The line L2 is set so as to intersect both the first (111) plane and the second (111) plane. A plurality of (10 in the present embodiment) staggered substrate regions 24 ′ to be the flow path forming substrate 24 are defined by the planned cutting lines L 1 and L 2, and the ink flow paths are arranged in each region 24 ′. A portion (not shown) to be formed is formed by etching. Note that the planned cutting lines L1 and L2 may be virtual lines or actually drawn lines.

  Then, after assembling other components such as the nozzle plate 25 and the elastic plate 23 in each region 24 ′ where the ink flow path is formed, the silicon wafer 35 is cut along the planned cutting lines L1 and L2. Divide into parts (channel unit 11). The silicon wafer 35 is provided with a plurality of cutting base points 40 for inducing cracks along the planned cutting lines L1 and L2 in order to cut along the planned cutting lines L1 and L2 and divide into individual parts. It has been. In this embodiment, the cutting base point 40 is formed by a through-hole penetrating the thickness direction of the silicon wafer 35 by laser light, and the number of the cutting base points 40 is sparse and longitudinal in the horizontal cutting line L1. The planned cutting line L2 is denser than the planned cutting line L1. That is, since the cutting planned line L1 set in the first (111) plane direction is easily broken along the first (111) plane, the number of cutting base points 40 formed on the cutting planned line L1 is minimal. Is suppressed. Specifically, three cutting base points 40 are formed for each piece of the substrate region 24 ′. On the other hand, the planned cutting line L2 set so as to intersect the first (111) plane and the second (111) plane is harder to break than the planned cutting line L1, so the cutting base points 40 are formed densely. By making it more fragile, it is designed to actively induce cracks when splitting.

  FIG. 5 is a schematic diagram illustrating the configuration of a laser processing apparatus 41 used for forming the cutting base point 40. In the figure, the silicon wafer 35 is indicated by a cross section taken along a planned cutting line. The laser processing device 41 includes a laser light source 42 that generates laser light, a reflection mirror 43 that adjusts the traveling direction of the laser light generated from the laser light source 42, and a laser beam from the reflection mirror 43 that is branched into a plurality of pieces. The branch element 44 and the like condensing on the silicon wafer 35. In this embodiment, the cutting base point 40 is formed using a YAG laser having a high energy absorption rate with respect to silicon. In addition, as long as the silicon wafer 35 can be processed, not only this YAG laser but also other lasers can be used.

Further, as the branch element 44, an optical diffraction element using light diffraction, a Fresnel type phase grating, or the like can be used. By using this branch element 44, simultaneous processing at a plurality of locations is possible, so that the cutting base point 40 can be formed efficiently. Then, using two types of branch elements 44 having different numbers of branches according to the planned cutting lines L1 and L2, the number of cutting base points 40 formed per unit length is determined by the planned cutting line L1 and the planned cutting line L2. Change. That is, when the cutting base points 40 are formed along the planned cutting line L1, the number of cutting base points 40 formed per unit length is made sparse by using branch elements 44 having a relatively small number of branches. On the other hand, when the cutting base point 40 is formed along the planned cutting line L2, the cutting base point 40 per unit length is formed by using the branch element 44 having a larger number of branches than the planned cutting line L1. Close the number.
In the present embodiment, the branch element 44 has both the laser beam branch function and the light condensing function. However, the branch element 44 has only the branch function, and has a condensing function. May be used separately.

  Next, formation of the cutting base point 40 using the laser processing apparatus 41 will be described. Note that it is desirable that the processing atmosphere be reduced to a pressure lower than the atmospheric pressure during processing. In this way, the time for silicon molecules that have been scattered and turned into gas during processing to float in the air can be extended, and the time until the scattered molecules recombine can be extended. Can be eliminated. As a result, it is possible to suppress the generation of processing waste such as dross and debris.

  The laser light generated from the laser light source 42 first enters the reflection mirror 43 and is reflected by the reflection mirror 43 toward the branch element 44 side. The laser beam from the reflection mirror 43 enters the branch element 44, is branched by the branch element 44, and is condensed and irradiated onto the planned cutting line on the surface 37 of the silicon wafer 35. As a result, a plurality of locations in the planned cutting line begin to melt simultaneously, and after a while, the cutting base point 40 is formed through the thickness direction of the silicon wafer 35. Then, this processing is sequentially performed along the planned cutting lines as indicated by the arrows in FIG. 4, thereby forming the cutting base points 40 on the respective planned cutting lines L1 and L2.

  Once the cutting base points 40 are formed along the planned cutting lines L1 and L2 through the above steps, the silicon wafer 35 is then cut along the planned cutting lines L1 and L2 to be divided into individual parts. . When the silicon wafer 35 is divided, the silicon wafer 35 may be divided by applying bending stress to the planned cutting lines L1 and L2 using hands and jigs. A description will be given of division by so-called expanded break in which a member is attached to the surface of the silicon wafer 35 before division, and the sheet member is stretched in the plane direction of the silicon wafer 35 to cut along the planned cutting lines L1 and L2.

  FIG. 6 is a schematic diagram for explaining an expanded break. In this expanded break, first, a sheet member 47 (dicing tape) having extensibility is attached to the surface of the silicon wafer 35 on which the cutting base points 40 are formed. A holding ring 48 whose inner diameter is set larger (for example, 180 mm) than the outer diameter (for example, 150 mm) of the silicon wafer 35 is attached to the peripheral portion of the sheet member 47.

  Then, as shown in FIG. 6A, the silicon wafer 35 with the sheet member 47 adhered is placed on the table 49, and the inner diameter thereof is aligned with the holding ring 48 above it. An expanding ring 50 is arranged. When the expand ring 50 is lowered downward in this state, the expand ring 50 contacts the holding ring 48. Thereafter, when the expand ring 50 is further lowered, as shown in FIG. 6B, the sheet member 47 expands, and the silicon wafer 35 is pulled radially from the center. As a result, the silicon wafer 35 is cut along the planned cutting lines L1 and L2 from each cutting base point 40 and divided into individual flow path forming substrates 24. At this time, the planned cutting line L1 has a smaller number of cutting base points 40 than the planned cutting line L2, but is set along the first (111) plane where cracking is likely to occur. it can. On the other hand, in the planned cutting line L2, the cutting base points 40 formed more than the planned cutting line L1 induce cracks along the planned cutting line L2, so that the cutting can be reliably performed on the planned cutting line L2.

  As described above, according to the above configuration, when the planned cutting line is set in the direction of the crystal orientation of the silicon wafer 35 (the first (111) plane in the above example), the cutting base point on the planned cutting line is as follows. When the number of formations of 40 is made sparse and the planned cutting line is set to intersect with the crystal orientation plane (excluding the surface 37), the number of cutting base points 40 formed in this planned cutting line is set in the crystal orientation plane direction. Since it is dense compared to the set case, it cuts along the planned cutting lines when dividing the silicon wafer 35 while minimizing the processing amount to shorten the processing time and reducing the processing waste. It becomes possible to do.

  Further, even when dividing into parts with relatively complicated shapes, it is only necessary to form the cutting base point 40 along the shape of the parts, so that the degree of freedom of the divided shape can be secured more widely.

  In the above, an example in which the cutting base point 40 is configured by a through-hole penetrating the thickness direction of the silicon wafer 35 by laser light has been shown. It can also be comprised with the hollow drilled. In this case, since it is not necessary to completely penetrate the silicon wafer 35, the processing time can be further shortened and the generation of processing waste can be further reduced. In addition, the cutting base point 40 can be formed using a cutting machine such as a dicer as well as the laser beam. Thereby, the cutting | disconnection base point 40 can be formed by the process for a short time rather than the case where a laser beam is used. Further, it is possible to form the cutting base point 40 by etching. In this case, the etching liquid can be prevented from wrapping around the back surface of the silicon wafer 35 by forming a recess (so-called half-etching) that is formed halfway without penetrating the cutting base point 40. Therefore, it is not necessary to mask the back surface of the silicon wafer 35, and the process can be simplified.

  Next, a second embodiment of the present invention will be described. In the present embodiment, for example, using a femtosecond laser processing apparatus, the laser beam is condensed inside the silicon wafer 35, and the cutting base point 40 ′ is configured by the weak part formed by damaging only the condensed part. It has the feature in being. In this femtosecond laser, energy concentrates on the condensing portion in a very short time, so that processing proceeds before heat is generated, processing of only the condensing portion is induced, and the surroundings are not damaged. That is, the cutting base point 40 ′ cannot be visually recognized on the surface of the silicon wafer 35 in appearance. Since other configurations are the same as those in the above embodiment, the description thereof will be omitted as appropriate.

  FIG. 7 is an enlarged view of a main part for explaining the formation of the cutting base point 40 ′ in the present embodiment, and the silicon wafer 35 is shown by a cross section along a planned cutting line. In the figure, reference numeral 55 denotes a condensing lens for condensing the laser light from the femtosecond laser processing apparatus. By adjusting the position of the condensing lens 55, the condensing point of the laser light is changed to silicon. Set inside the wafer 35. As a result, a phenomenon of optical damage due to multiphoton absorption occurs inside the silicon wafer 35. Due to the optical damage, a cutting base point 40 ′ that is weaker than other portions is formed only inside the silicon wafer 35. Similarly to the cutting base point 40 in the above-described embodiment, the cutting base point portion 40 ′ also serves as a base point for splitting when the silicon wafer 35 is split and also serves to induce cracking.

  Also in the present embodiment, in the planned cutting line set in the crystal orientation plane direction (first (111) plane), the number of cutting base points 40 ′ is sparse and the planned cutting line is set to intersect with the crystal orientation plane. Then, by making the number of cutting base points 40 formed dense compared to the case where the crystal orientation plane direction is set, the amount of processing is reduced as much as possible and the processing time is shortened while ensuring the easy division. It becomes possible to do. In particular, in the case of the present embodiment, since the cutting base point 40 ′ is formed only inside the silicon wafer 35, it is possible to more reliably prevent the generation of processing waste.

Next, a third embodiment of the present invention will be described.
FIG. 8 is a partially enlarged view illustrating the configuration of the silicon wafer 35 in the present embodiment. In each of the embodiments described above, the configuration in which the cutting base point 40 (40 ′) is intermittently formed on the planned cutting line is shown, but in the present embodiment, the cutting is planned along the planned cutting lines L1 and L2 of the silicon wafer 35. The groove 60 is engraved. Since other parts are the same as those in the above embodiment, description thereof is omitted as appropriate.

  In the present embodiment, as shown in FIG. 9, the depth D1 of the planned cutting groove 60 set in the crystal orientation direction (first (111) plane) is made shallower, and the crystal orientation plane (first The depth D2 is set to be deeper than the depth D1 with respect to the cutting planned groove 60 set so as to intersect the (111) plane and the second (111) plane). That is, with respect to the planned cutting groove 60 set in the first (111) plane direction, the processing amount is suppressed as much as possible by reducing the depth D1, thereby shortening the processing time and generating the processing waste. We are trying to reduce it. On the other hand, the groove 60 to be cut set in a state intersecting with the crystal orientation plane (excluding the (110) plane of the surface 37) is harder to crack than in the case where the crystal orientation plane direction is set. By making it deeper and weaker, cracks are actively induced along the planned cutting line L2 at the time of division. As described above, the same effects as those of the above embodiments can be obtained also by the configuration of the present embodiment. In other words, it is possible to cut along each planned cutting line (scheduled cutting groove) at the time of dividing the silicon wafer 35 while minimizing the processing amount to shorten the processing time and the processing waste. Become.

  By the way, the present invention is not limited to the above-described embodiment, and various modifications can be made based on the description of the scope of claims.

  In the above, an example in which the flow path forming substrate 24 of the recording head 1 is manufactured using the silicon wafer 35 has been described. However, the present invention is not limited to this. For example, when a semiconductor element or the like is manufactured using a silicon wafer. The present invention can be applied.

  In the above description, the ink jet recording head 1 has been described as an example of the liquid ejecting head, but the present invention can also be applied to other liquid ejecting heads. For example, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an electrode material ejecting head used for forming an electrode such as an organic EL (Electro Luminescence) display, an FED (surface emitting display), a biochip (biochemical element) The present invention can also be applied to bioorganic matter ejecting heads and the like used in the production of

FIG. 2 is an exploded perspective view illustrating a configuration of a recording head. FIG. 3 is a cross-sectional view of a main part for explaining the configuration of a recording head. It is a top view of the silicon wafer used as the base material of a flow-path formation board | substrate. It is a schematic diagram explaining an example of how to break a silicon wafer. It is a figure explaining the structure of the laser processing apparatus used for formation of a cutting | disconnection base point. It is a schematic diagram explaining an expanded break. It is a principal part enlarged view explaining formation of the cutting | disconnection base point in 2nd Embodiment. It is a partially expanded view explaining the structure of the silicon wafer in 3rd Embodiment. (A) is sectional drawing of the cutting plan groove | channel set along the 1st (111) surface, (b) is in the state which cross | intersects the 1st (111) surface and the 2nd (111) surface. It is sectional drawing of the set cutting plan groove | channel.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Recording head, 2 Cartridge base, 3 Filter, 4 Ink introduction needle, 5 Driving substrate, 6 Connector, 7 Sheet, 8 Electronic component, 10 Case, 11 Flow path unit, 12 Housing empty part, 13 Actuator unit, 14 Substrate mounting surface, 16 head cover, 19 piezoelectric vibrator, 20 fixed plate, 21 flexible cable, 23 elastic plate, 24 flow path forming substrate, 25 nozzle plate, 27 common ink chamber 28 ink supply port, 29 pressure generating chamber, 30 nozzle Aperture, 32 islands, 35 silicon wafer, 37 silicon wafer surface, 40 cutting origin, 41 laser processing device, 42 laser light source, 43 reflection mirror, 44 branch element, 47 sheet member, 48 holding ring, 49 table, 50 expanding Ring, 55 condenser lens, 0 cut groove

Claims (6)

A cutting line is set on the surface of the substrate having crystallinity, a plurality of cutting base points are formed along the cutting line, and the base material is cut from the cutting base line along the cutting line. A method for dividing a crystalline base material, which is divided into
When the planned cutting line is set in the crystal orientation direction, the number of cutting base points on the planned cutting line is sparse,
When the planned cutting line is set to intersect the previous crystal orientation plane, the number of cutting base points formed in the planned cutting line is made dense compared to the case where the planned cutting line is set in the crystal orientation plane direction. A method for dividing a crystalline base material, comprising:   The method for dividing a crystalline base material according to claim 1, wherein the cutting base point is constituted by a through-hole penetrating the thickness direction of the base material.   The method for dividing a crystalline base material according to claim 1, wherein the cutting base point is constituted by a recess formed partway in the thickness direction of the base material.   2. The crystalline group according to claim 1, wherein the cutting base point is constituted by a fragile portion formed by condensing laser light inside the base material and damaging only the condensing portion. How to divide the material. A method for dividing a crystalline base material, in which a groove to be cut is formed in a base material having crystallinity, and the base material is cut along the planned cutting groove and divided into a plurality of parts,
When the cutting planned groove is set in the crystal orientation direction, the depth of the cutting planned groove is made shallower,
Crystallinity characterized in that, when the cutting-scheduled groove is set in a state intersecting with the crystal orientation plane, the depth of the cutting-scheduled groove is set deeper than when the cutting-scheduled groove is set in the crystal orientation plane direction. Substrate dividing method. The crystal substrate according to any one of claims 1 to 5, wherein the substrate has crystallinity in which at least one liquid flow path of a pressure generation chamber communicating with a common liquid chamber or a nozzle opening for discharging liquid is formed. A liquid jet head manufacturing method comprising: a flow path forming member obtained by dividing by a functional substrate dividing method .

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