JP2006147904A - Method of manufacturing electronic-element package, and electronic-element package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To conduct a sealing with a high reliability in an electronic-element package. <P>SOLUTION: In the electronic-element package 1, an electronic element 21 is stored by bonding a first substrate 22 with a mounted electronic element 21 and a second substrate 23. In the electronic-element package 1, the first substrate 22 and the second substrate 23 are joined by fitting a gold metal wall 221 surrounding the electronic element 21 to the first substrate 22. The width and height of the metal wall 221 are formed in 1 μm or more, and the first substrate 22 and the second substrate 23 are metal-joined while plastically deforming the metal wall 221 in the height direction in this case. Accordingly, the bonding can be conducted while absorbing the irregularities and warps of the substrates by the metal wall 221, and the sealing in the electronic-element package 1 can be conducted with the high reliability. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing an electronic device package for storing an electronic device in a sealed internal space, and an electronic device package.

Conventionally, as a technique for protecting semiconductor elements, surface acoustic wave elements, and other various electronic elements from the effects of moisture, oxygen, etc. existing in the atmosphere, the electronic elements are housed inside a concave container, and the top surface of the container A technique has been proposed in which a solder, glass material, adhesive, or the like is supplied to a metal, a ceramic plate is joined, the inside of the container is sealed, and the electronic element is sealed. For example, in Patent Document 1, a metallized layer, nickel plating, and gold plating are sequentially provided on the top surface of a concave ceramic container, and a seal ring is used by seam welding to a metal lid on which a metal film is formed via silver brazing. A technique for improving airtightness and reducing the unit price of a container is disclosed.
JP 11-31748 A

  By the way, when sealing with solder, glass powder, silver brazing, etc., it is necessary to heat to 200 ° C. or higher, but the device placed in the internal space is heat resistant like a small mechanical switch, mechanical filter, etc. If the property is low, there is a problem that the device is damaged by heat or a sufficiently reliable sealing cannot be performed. Of course, a method of sealing at a low temperature with a resin-based adhesive is also conceivable, but a device whose characteristics deteriorate due to surrounding gas such as a high-frequency mechanical filter is hermetically sealed in a reduced pressure state of 1 Pa or less, When it is necessary to prevent the influence of humidity like a minute mechanical switch, sealing with a resin adhesive is not preferable.

  The present invention has been made in view of the above problems, and it is a main object of the present invention to provide a technique that can perform highly reliable sealing in sealing an electronic device package and can be applied to bonding at a relatively low temperature. It is aimed.

  The invention according to claim 1 is a method of manufacturing an electronic device package, wherein a width is 1 μm or more and 1 mm or less, a height is 0.1 μm or more and 35 μm or less, and an annular metal wall surrounding a predetermined region is formed. A preparation step of preparing a first container member and a second container member having a joint corresponding to the metal wall, a positioning step of facing the joint and the metal wall, and the joint And the metal wall are pressed against each other, and the first container member and the second container member are pressed in a direction approaching each other, so that the metal wall is plastically deformed with respect to the height direction. And a pressing step for forming at least a part of a space in which the electronic element is arranged by metal bonding the entire upper surface and the bonding portion.

  According to a second aspect of the present invention, there is provided the electronic device package manufacturing method according to the first aspect, wherein the height of the metal wall is not less than 1 μm and not more than 10 μm.

  According to a third aspect of the present invention, in the electronic device package manufacturing method according to the first aspect, the height of the metal wall is 2 μm or more and 5 μm or less.

  Invention of Claim 4 is a manufacturing method of the electronic element package in any one of Claim 1 thru | or 3, Comprising: An energy wave is irradiated to the said metal wall and the said junction part before the said press process. The method further includes a step, wherein the metal bonding is performed at 300 ° C. or less in the pressing step.

  Invention of Claim 5 is a manufacturing method of the electronic element package of Claim 4, Comprising: The said press process is performed in a pressure-reduced environment, The said space by which the said electronic element is arrange | positioned by the said press process is provided. Fully sealed.

  A sixth aspect of the present invention is the electronic element package manufacturing method according to any one of the first to fifth aspects, wherein the metal wall is formed of gold, copper or aluminum.

  The invention according to claim 7 is a method of manufacturing an electronic device package, wherein a first container member formed with a metal wall having a plurality of annular portions surrounding a predetermined region, and a joint corresponding to the metal wall A preparation step of preparing a second container member having a portion, an alignment step of facing the joint portion and the metal wall, contacting the joint portion and the metal wall, and further the first container Pressing the member and the second container member in a direction approaching each other to form a metal space between the metal wall and the joint portion to form at least a part of a space in which the electronic element is disposed; Prepare.

  The invention according to claim 8 is the method of manufacturing the electronic device package according to claim 7, wherein the metal wall is between the two annular portions of the plurality of annular portions. It further has a some connection part which connects an annular part.

  The invention according to claim 9 is an electronic element package, which is manufactured by the method for manufacturing an electronic element package according to any one of claims 1 to 8.

  The invention according to claim 10 is an electronic element package, comprising: an electronic element; and a first container member and a second container member that form an internal space in which the electronic element is stored, The container member includes a metal wall having a plurality of annular portions surrounding a region in contact with the internal space, and the joint portion of the second container member is metal-bonded to the metal wall.

  An eleventh aspect of the present invention is the electronic device package according to the tenth aspect, in which the metal wall includes the two annular portions between any two annular portions of the plurality of annular portions. It further has a plurality of connecting portions to be connected.

  According to the present invention, the electronic element package can be sealed with high reliability. In the inventions of claims 2 and 3, the sealing can be easily performed.

  In invention of Claim 4, an electronic element with low heat-resistant temperature can be accommodated, and in invention of Claim 5, the electronic element which dislikes presence of gas can be accommodated appropriately. In the inventions according to claims 8 and 11, the sealing reliability can be further improved.

  FIG. 1 is a longitudinal sectional view showing an electronic element package 1 according to a first embodiment of the present invention. The electronic element package 1 includes a first substrate 22 on which the electronic element 21 is mounted, and a second substrate 23 having a cavity 230 that forms a space for accommodating the electronic element 21 by being bonded to the first substrate 22. . That is, in the electronic element package 1, the first substrate 22 and the second substrate 23 serve as container members that store the electronic elements 21. For example, a SAW (Surface Acoustic Wave) filter is used as the electronic element 21, and the first substrate 22 is formed of silicon and the second substrate 23 is formed of silicon or glass, and has a size of 6 mm square.

  FIG. 2 is a plan view showing the first substrate 22 and the electronic element 21 before the first substrate 22 and the second substrate 23 are bonded together. The periphery of the electronic element 21 of the first substrate 22 is appropriately thinly plated as necessary, and an annular gold metal wall 221 surrounding the region where the electronic element 21 is mounted is plated on the uppermost surface. Formed. In FIG. 2, the width of the metal wall 221 is emphasized and drawn thick. On the other hand, as shown in FIG. 1, the lower surface of the second substrate 23 corresponding to the metal wall 221 is a joint portion 231 that is metallized with gold, and the metal wall 221 and the joint portion 231 are metal-joined. Thus, the space in which the electronic element 21 is accommodated is hermetically sealed.

  FIG. 3 is a diagram illustrating a manufacturing process of the electronic element package 1. When the electronic device package 1 is manufactured, a first substrate 22 is prepared by forming a metal wall 221 on the substrate by plating and mounting the electronic device 21 in advance, and the cavity 230 is formed. Two substrates 23 are also prepared (step S1). As shown in FIG. 4, the first substrate 22 is placed on the stage 52 in the plasma processing chamber 51, and the second substrate 23 is held by the chuck 53. As a result, the joint portion 231 of the second substrate 23 and the metal wall 221 of the first substrate 22 face each other (see FIG. 1). Thereafter, a camera (not shown) is temporarily inserted into the chamber 51, and the joining portion 231 is aligned with the metal wall 221 (step S2).

  The stage 52 and the chuck 53 are electrodes facing each other. After the pressure in the chamber 51 is reduced (for example, the pressure is reduced to 1 Pa or less), argon gas is introduced in a necessary amount, and the stage 52 and the chuck 53 are introduced. A plasma is generated by applying an alternating high-frequency voltage between and the surface of the metal wall 221 of the first substrate 22 and the bonding portion 231 of the second substrate 23 (so-called plasma cleaning treatment). (Step S3).

  When the surface treatment is completed, the shaft 54 connected to the chuck 53 is lowered, and as shown in FIG. 5, the joint portion 231 and the metal wall 221 come into contact with each other (see FIG. 1). The two substrates 23 are pressed toward each other (Step S4). FIG. A and FIG. B is an enlarged view showing a state of the metal wall 221 before and after pressing. FIG. A and FIG. As shown in B, the entire upper surface of the metal wall 221 and the bonding portion 231 are metal-bonded (that is, bonded at the metal atom level) while the metal wall 221 is plastically deformed in the height direction by pressing. Thereby, the sealed space in which the electronic element 21 is disposed is formed. Further, during the surface treatment and bonding, the first substrate 22 and the second substrate 23 are set to 150 ° C. or lower to prevent the electronic element 21 from being damaged by heat.

  As described above, in the electronic element package 1, metal bonding between the first substrate 22 and the second substrate 23 is performed while plastic deformation of the metal wall 221 in the height direction at the time of manufacture. As a result, bonding can be performed while absorbing the unevenness of the upper surface of the first substrate 22 and the lower surface of the second substrate 23 and the warpage of the substrate itself by the metal wall 221, and sealing the space in which the electronic element 21 is accommodated Reliability can be improved. In addition, by using the metal wall 221, the width of a region necessary for bonding can be minimized, and the electronic device package can be reduced in size.

  Further, the sealing by pressing is performed in a reduced pressure environment, and at this time, the space where the electronic element 21 is disposed is completely sealed (that is, the entire region serving as the internal space is formed), so that the mechanical Even an electronic element 21 that dislikes the presence of gas, such as a filter, can be stored and sealed appropriately, and furthermore, even an electronic element 21 that dislikes moisture such as a micro mechanical switch by metal bonding. Highly reliable sealing can be performed.

  Here, the cross-sectional shape of the metal wall 221 will be described. In order to form the metal wall 221 at a low cost, the metal wall 221 is preferably formed by a plating method (an etching method may be used) using a resist (more preferably a dry film resist). In general, in a processing method involving an exposure process, the width of the metal wall 221 (W1 shown in FIG. 6.A) is preferably 1 μm or more, and the height (H1 shown in FIG. 6.A) is usually 0.8. 1 μm or more. However, considering the flatness of the first substrate 22 and the second substrate 23, the accuracy of the bonding apparatus, etc., the height H1 is preferably set to 1 μm or more. Further, in view of the use of the electronic element package 1, it is preferable that the width W1 is 1 mm or less and the height H1 is 35 μm or less from the plating range. From the viewpoint that the metal wall 221 can be easily formed, the height H1 is preferably 10 μm or less, and the amount of plastic deformation of the metal wall 221, that is, FIG. A height H1 shown in FIG. The height H1 of the metal wall 221 is set to be 2 μm or more and 5 μm or less in consideration of the point that the difference from the height H2 shown in B is preferably 1 to 2 μm and various materials required for forming the metal wall, work efficiency, and the like. Most preferably.

  7 and 8 are diagrams showing another example of the surface treatment applied to the first substrate 22 and the second substrate 23. FIG. In FIG. 7, the surface treatment is performed by irradiating the first substrate 22 placed on the stage 63 and the second substrate 23 held by the chuck 64 from the energy wave irradiation source 62 in the decompressed chamber 61 with the energy wave. Is called. As the energy wave, an electron beam, a fast atom beam (FAB), an ion beam, ultraviolet light, laser light, or the like is used. After the surface treatment, the first substrate 22 and the second substrate 23 are pressed against each other in the chamber 61 by the shaft 65 being lowered, and the metal wall 221 is plastically deformed in the height direction, and the joint portion 231 and the metal wall 221 are Is metal-bonded.

  In FIG. 8, the first substrate 22 placed on the stage 72 and the second substrate 23 held by the chuck 73 are irradiated with ultraviolet rays using an excimer ultraviolet lamp 71 in the atmosphere, thereby causing a metal wall. It is a figure which shows a mode that surface treatment is given to 221 and the junction part 231. FIG. After the ultraviolet irradiation, the shaft 74 connected to the chuck 73 is lowered, and the metal wall 221 of the first substrate 22 is plastically deformed to be metal-bonded with the bonding portion 231 of the second substrate 23 in the atmosphere. 4 and 7, the first substrate 22 and the second substrate 23 may be taken out from the chamber after the surface treatment, and metal bonding may be performed by pressing in the atmosphere. Furthermore, ultrasonic vibration may be used in an auxiliary manner. As described above, as long as metals are directly bonded at an atomic level without using a brazing material, various bonding methods may be employed as the metal bonding.

  FIG. 9 is a longitudinal sectional view showing an electronic element package 1a according to the second embodiment of the present invention, and FIG. 10 is a plan view of the first substrate 22 of the electronic element package 1a. As shown in FIG. 10, in the electronic device package 1a, the metal walls 221 are substantially lattice-shaped, and the other points are the same as in the first embodiment, and the second substrate 23 having the first substrate 22 and the cavity 230 is provided. Is metal-bonded to form an internal space in which the electronic element 21 is accommodated. 9 and 10, the same reference numerals as those in FIGS. 1 and 2 are attached as appropriate.

  As shown in FIG. 10, the metal wall 221 of the electronic device package 1 a has a plurality of annular portions 31 surrounding the periphery of the electronic device 21, that is, surrounding a region in contact with the internal space. The spaces are connected by a plurality of connecting portions 32. A plurality of minute spaces are formed between the first substrate 22 and the second substrate 23 by the metal wall 221, and the metal bonding between the metal wall 221 and the bonding portion 231 is partially incomplete. Even if it is damaged, the sealing of the internal space is maintained by the bonding at other parts. As a result, the reliability of sealing is improved.

  The manufacturing method of the electronic element package 1a is the same as that in the case of FIG. 3 except that the shape of the metal wall 221 of the first substrate 22 to be handled is different. That is, the first substrate 22 on which the metal wall 221 having the plurality of annular portions 31 and the plurality of connecting portions 32 surrounding the region where the electronic element 21 is mounted is formed, and the first substrate 22 having the joint portion 231 corresponding to the metal wall 221. After the two substrates 23 are prepared (step S1), the bonding portion 231 and the metal wall 221 are aligned to face each other (step S2), and the metal wall 221 and the bonding portion 231 are subjected to surface treatment ( In step S3), the bonding portion 231 and the metal wall 221 are brought into contact with each other, and further, the first substrate 22 and the second substrate 23 are pressed in a direction approaching each other (step S4), whereby the metal wall 221 and the bonding portion 231 are Are joined to form a space in which the electronic element 21 is disposed. However, since the metal walls 221 are multiple, even if the amount of plastic deformation of the metal walls 221 is smaller than that of the first embodiment, highly reliable sealing can be performed.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various deformation | transformation is possible.

  For example, in the above embodiment, a space for storing the electronic element 21 is formed by the first substrate 22 and the second substrate 23, but the electronic element 21 is stored by three or more members such as an upper lid, a side wall, and a lower lid. When the space to be formed is formed, the metal wall 221 having the height and the width as in the first embodiment or the metal wall 221 having the shape as in the second embodiment is used for joining the members. be able to. That is, at least a part of the space in which the electronic element 21 is disposed may be formed by metal bonding using the metal wall 221. The material of the first substrate 22 and the second substrate 23 may be other materials such as metal and ceramics.

  The stored electronic element 21 is not limited to the SAW filter, and may be various other electronic elements such as a mechanical switch, a semiconductor circuit, and a sensor.

  The metal bonding in the above embodiment is performed at 150 ° C. or lower, and thereby, bonding can be performed at a lower temperature than in the case of using solder, but the metal bonding may be performed at 300 ° C. or lower. Even in this case, when an electronic device having a heat resistance of 300 ° C. or lower is accommodated, sealing can be performed while avoiding a bonding method using only heat such as thermal diffusion that requires a temperature exceeding 300 ° C. Further, instead of the energy wave irradiation, only ultrasonic vibration may be applied at the time of bonding.

  In the above embodiment, the metal wall 221 is formed of gold, and the joint portion 231 is also formed of gold. However, these portions may be formed of other metals that are easily plastically deformed, such as copper, aluminum, and solder. Good. However, gold, copper, or aluminum is preferably used from the viewpoint of appropriately performing metal bonding with plastic deformation, and gold is most preferable from the viewpoint of easily performing high-quality bonding. Furthermore, the cross-sectional shape of the metal wall 221 may be other shapes such as a triangle or a trapezoid in addition to the substantially rectangular shape, and the metal wall 221 may be formed by a method other than the plating method or the etching method.

  In the metal wall 221 in the second embodiment, the connecting portion 32 may be omitted and only the annular portion 31 may be provided. Further, the connecting portion 32 may be left between at least any two of the annular portions 31. Even in such a case, the reliability of sealing is improved by multiple sealing by at least the plurality of annular portions 31.

  Furthermore, the shapes of the first substrate 22 and the second substrate 23 may be appropriately changed. For example, the first substrate 22 may have a cavity. When the electronic element 21 is formed directly on the second substrate 23 and is sufficiently thinner than the metal wall 221 after bonding, the second substrate 23 may be a flat substrate like the first substrate 22. Good.

  INDUSTRIAL APPLICABILITY The present invention can be used for an electronic device package in which various electronic devices are accommodated in an internal space and a manufacturing method thereof.

Vertical section of electronic device package Plan view of first substrate and electronic element Diagram showing manufacturing process of electronic device package Diagram showing chamber The figure which shows joining of the 1st substrate and the 2nd substrate The figure which shows the metal wall before pressing The figure which shows the metal wall after pressing The figure which shows the other example of surface treatment The figure which shows the further another example of surface treatment Vertical section of electronic device package Plan view of first substrate and electronic element

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1a Electronic device package 21 Electronic device 22 1st board | substrate 23 2nd board | substrate 31 Annular part 32 Connection part 221 Metal wall 231 Joining part S1-S4 Step

Claims (11)

A method for manufacturing an electronic device package, comprising:
A first container member having a width of 1 μm or more and 1 mm or less, a height of 0.1 μm or more and 35 μm or less and having an annular metal wall surrounding a predetermined region, and a joint portion corresponding to the metal wall. A preparation step of preparing two container members;
An alignment step of facing the joint and the metal wall;
While bringing the joint portion and the metal wall into contact with each other and further pressing the first container member and the second container member toward each other, the metal wall is plastically deformed in the height direction. A pressing step for forming at least a part of a space in which the electronic element is disposed by metal-joining the entire upper surface of the metal wall and the joining portion;
An electronic element package manufacturing method comprising: It is a manufacturing method of the electronic device package according to claim 1,
The height of the said metal wall is 1 micrometer or more and 10 micrometers or less, The manufacturing method of the electronic element package characterized by the above-mentioned. It is a manufacturing method of the electronic device package according to claim 1,
The height of the said metal wall is 2 micrometers or more and 5 micrometers or less, The manufacturing method of the electronic element package characterized by the above-mentioned. A method of manufacturing an electronic device package according to any one of claims 1 to 3,
Before the pressing step, further comprising a step of irradiating the metal wall and the joint with an energy wave,
In the pressing step, the metal bonding is performed at 300 ° C. or less. It is a manufacturing method of the electronic device package according to claim 4,
The method of manufacturing an electronic device package, wherein the pressing step is performed in a reduced pressure environment, and the space in which the electronic device is arranged is completely sealed by the pressing step. A method for manufacturing an electronic device package according to any one of claims 1 to 5,
The method of manufacturing an electronic device package, wherein the metal wall is formed of gold, copper, or aluminum. A method for manufacturing an electronic device package, comprising:
Preparing a first container member formed with a metal wall having a plurality of annular parts surrounding a predetermined region, and a second container member having a joint corresponding to the metal wall;
An alignment step of facing the joint and the metal wall;
By bringing the joint portion and the metal wall into contact with each other and further pressing the first container member and the second container member toward each other, the metal wall and the joint portion are metal-joined. A pressing step for forming at least a part of a space in which the electronic element is disposed;
An electronic element package manufacturing method comprising: It is a manufacturing method of the electronic device package according to claim 7,
The method of manufacturing an electronic device package, wherein the metal wall further includes a plurality of connecting portions that connect the two annular portions between any two annular portions of the plurality of annular portions.   An electronic element package manufactured by the method for manufacturing an electronic element package according to claim 1. An electronic device package,
An electronic element;
A first container member and a second container member forming an internal space in which the electronic element is stored;
With
The first container member includes a metal wall having a plurality of annular portions surrounding a region in contact with the internal space, and a joint portion of the second container member is metal-bonded to the metal wall. Electronic device package. The electronic device package according to claim 10,
The electronic device package, wherein the metal wall further includes a plurality of connecting portions for connecting the two annular portions between any two annular portions of the plurality of annular portions.

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