JP2006135835A - Electronic component for high frequency signal processing and wireless communication system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component for high frequency power amplification (RF module) preventing degradation of AM suppression characteristics due to leakage of jamming. <P>SOLUTION: A bandpass filter (221) such as an SAW filter for removing unwanted waves from received signals, and a high frequency signal processing IC (210) incorporating a mixer (MIX, 232) which synthesizes, for frequency conversion, the signals from an impedance matching circuit (222), an oscillation circuit (252) for generating oscillation signals synthesized with the received signals, and the oscillation signal with the received signal that has passed the bandpass filter, are mounted on an insulating substrate of a high frequency signal processing electronic component (RF module). Elements (L1, L2; 214a and 214b) having inductance component are inserted at least in the middle of a power line (including a ground line) which supplies a power source voltage to the mixer as well as in the middle of the power source line of the oscillation circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a technology that is effective when applied to an electronic component incorporating a high-frequency signal processing semiconductor integrated circuit or a band-pass filter, which is used in a radio communication system such as a cellular phone and converts a high-frequency received signal. Voltage-controlled oscillation circuit) and a direct down-conversion high-frequency signal processing semiconductor having a mixer that synthesizes a local oscillation signal from the VCO and a high-frequency reception signal that has passed through a band-pass filter and directly converts the signal to a signal in the audio frequency band The present invention relates to a technique effective when applied to a high-frequency signal processing electronic component (RF module) incorporating an integrated circuit.

  In a wireless communication system (mobile communication system) such as a cellular phone, a received signal or a transmission signal is combined with a high-frequency local oscillation signal to down-convert or up-convert the frequency, or the transmission signal is modulated or received. A semiconductor integrated circuit (hereinafter referred to as a high-frequency signal processing IC) is used.

  Conventionally, in such a high frequency signal processing IC, a high frequency reception signal is once converted into an intermediate frequency signal, and then converted into an audio frequency band signal, and a transmission signal in the audio frequency band is once converted into an intermediate frequency signal. After that, a super-heterodyne high-frequency signal processing IC (Patent Document 1) that converts the frequency to a transmission frequency signal or after modulating an intermediate frequency oscillation signal with the transmission signal, a feedback signal from the VCO for transmission and the RF A so-called offset PLL type high frequency signal that generates an intermediate frequency signal by synthesizing the oscillation signal of the VCO and compares the phase of this signal with the modulated signal to generate and control an oscillation control signal of the transmission VCO. There is an IC (Patent Document 2).

  The superheterodyne type high frequency signal processing IC and the offset PLL type high frequency signal processing IC are unsuitable for downsizing the IC because the circuit scale is large, and the direct conversion method is effective.

By the way, in the field of mobile phones, there are high demands for downsizing and reducing the number of parts for electronic parts constituting the system in order to reduce the size of the main body. Therefore, a high-frequency signal processing IC incorporates a VCO that generates an oscillation signal to be combined with a transmission / reception signal, or a band-pass filter such as a high-frequency signal processing IC or a SAW filter that removes unwanted waves from a received signal and impedance matching. A technology for providing a circuit as a component (generally called an RF module) mounted on an insulating substrate such as ceramic has been developed.
JP 2001-244416 A Japanese Patent Application No. 2003-048631

  In order to achieve miniaturization of the module, it is important not only to miniaturize parts such as IC (semiconductor integrated circuit) and elements constituting the module, but also to reduce the space between the parts. However, there is a problem that the smaller the space between the components, the narrower the interval between the wirings connecting the module terminals (pads) and the IC chip pads, and the more likely the signal leakage occurs.

  The present inventors have designed and prototyped to provide an RF module in which a high frequency signal processing IC with a built-in VCO, a SAW filter, and an impedance matching circuit are mounted on a ceramic substrate. The GSM (Global System for Mobile Communication) The AM suppression characteristics defined in the standard were evaluated. The AM suppression characteristic is an index indicating the degree of difficulty in hearing a desired wave due to the jamming wave when the jamming wave is forcibly input while receiving the desired wave.

  The RF module prototyped by the present inventors has a problem that the AM suppression characteristic does not satisfy the standard even if the high frequency signal processing IC constituting the module alone satisfies the AM suppression characteristic. I found out. Therefore, various experiments were conducted to investigate the cause. As a result, it has been found that the AM suppression characteristic is deteriorated because the interference wave included in the input signal goes around the power source line such as the mixer or the VCO and leaks to the oscillation signal side.

An object of the present invention is to provide a high-frequency power amplification electronic component (RF module) capable of preventing deterioration of AM suppression characteristics due to leakage of interference waves.
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

Outlines of representative ones of the inventions disclosed in the present application will be described as follows.
That is, a band-pass filter such as a SAW filter that removes unwanted waves from the received signal, an impedance matching circuit, an oscillation circuit (VCO) that generates a local oscillation signal combined with the received signal, and a signal from the oscillation circuit and the band-pass In a high-frequency signal processing electronic component (RF module) in which a high-frequency signal processing IC having a built-in mixer that synthesizes the received signal that has passed through the filter and performs frequency conversion (down-conversion) is mounted on an insulating substrate, at least the mixer circuit An element having an inductance component is inserted in the middle of the power supply line or ground line for supplying the power supply voltage and in the middle of the power supply line or ground line of the oscillation circuit. Further, when the high-frequency signal processing IC has a buffer for amplifying the signal obtained by dividing the oscillation signal between the oscillation circuit and the mixer, the mixer power supply line or ground line and the buffer power supply line or ground line You may make it interpose the element which has an inductance component in the middle.

  According to the above-described means, when an interference wave is forcibly input to the signal input terminal side, the interference component wraps around the power source line such as a mixer or VCO and leaks to the input path side of the local oscillation signal. This can be suppressed by the element having the same, and this can prevent the deterioration of the AM suppression characteristic defined in the GSM standard.

  Here, an RF module suitable for application of the present invention is a direct conversion system having a mixer that synthesizes a local oscillation signal from a VCO and a high-frequency received signal that has passed through a band-pass filter and directly converts the signal into a signal in the audio frequency band. RF module incorporating a high frequency signal processing IC. Super heterodyne and offset PLL high frequency signal processing ICs require multiple VCOs and loop filters, have a large chip size and a large number of external elements. This is because an RF module incorporating a high-frequency signal processing IC of this type can be easily reduced in size, thereby increasing the density of elements and wiring on the module substrate and causing signal leakage.

  Furthermore, an RF module suitable for application of the present invention is such that the high frequency signal processing IC has a plurality of power supply pads according to the internal circuit, and the insulating substrate on which the band pass filter and the high frequency signal processing IC are mounted, This is a module composed of a multilayer substrate in which a plurality of substrates on which conductive patterns to be wirings are formed on the front surface or the front and back are laminated. The use of the multilayer substrate facilitates the miniaturization of the module, while the use of the multilayer substrate reduces the interval between the power supply lines that supply the power supply voltage to each circuit in the high frequency signal processing IC having a plurality of power supply pads. This is because the leakage of the interference wave to be solved by the present invention is likely to occur.

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
That is, according to the present invention, it is possible to realize a high-frequency power amplification electronic component (RF module) that can prevent deterioration of AM suppression characteristics due to leakage of interference waves.

Preferred embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a block diagram showing a configuration example of a high frequency power amplification electronic component (RF module) to which the present invention is applied and a radio communication system using the same. In this specification, a plurality of semiconductor chips and discrete components are mounted on an insulating substrate such as a ceramic substrate with printed wiring on the surface or inside, and each component has a predetermined role in the printed wiring or bonding wire. A module that can be handled as one electronic component is called a module.

  The wireless communication system of FIG. 1 includes a front end module 100 that includes an antenna ANT that transmits and receives signal radio waves, a switch 110 that switches between transmission and reception, and a high-frequency power amplifier (power amplifier) 120 that amplifies the transmission signal and outputs it to the antenna. And an RF module 200 having a high-frequency signal processing IC 210 that down-converts the received signal and up-converts the transmitted signal, and a baseband circuit 300 that performs baseband processing of the transmitted signal and the received signal. . The baseband circuit 300 includes one or several ICs including a microprocessor, DPS, and the like, and has a function of controlling the front end module 100 and the RF module 200.

  The RF module 200 includes, on the insulating substrate, in addition to the high-frequency signal processing IC 210, an element that forms a band-pass filter 221 that removes unwanted waves from the received signal, and between the band-pass filter 221 and the high-frequency signal processing IC 210. An element constituting an impedance matching circuit 222 that performs impedance matching, an element constituting a bandpass filter 261 that removes harmonic components from a transmission signal, and an impedance matching circuit that performs impedance matching between the bandpass filter 261 and the power amplifier 120 The element which comprises 262 is mounted.

  Although not particularly limited, in the RF module of this embodiment, the reception-side bandpass filter 221 is configured by a SAW filter, and the transmission-side bandpass filter 261 is configured by a capacitive element and a resistance element. Further, the impedance matching circuits 222 and 262 are constituted by capacitive elements and inductance elements made of discrete components, and these elements are mounted on an insulating substrate by soldering or the like. The impedance matching circuits 222 and 262 can also be configured by a transmission line made of a microstrip line or the like formed on the substrate surface and a capacitive element connected between a predetermined location of the transmission line and a ground point. is there. In addition, when the substrate has a multilayer structure in which a plurality of dielectric plates are stacked, the capacitor element is configured using an interpolating capacitor having electrodes as conductor layers formed on the front and back of one of the dielectric plates. be able to.

  The high-frequency signal processing IC 210 includes a reception system circuit 230, a transmission system circuit 240, and a control system circuit 250 common to the transmission / reception system. Although not particularly limited, the receiving system circuit 230 of the high-frequency signal processing IC 210 of this embodiment is a direct conversion system circuit that down-converts a received signal in the GSM standard frequency band directly into a signal in the audio frequency band. ing. The transmission system circuit 240 is also a direct conversion system that up-converts a transmission signal in the voice frequency band directly to a signal of the transmission frequency of the final carrier wave.

The reception system circuit 230 demodulates and down-converts the low noise amplifier (LNA) 231 that amplifies the reception signal and the orthogonal signal generated by the frequency dividing circuit 254 to the reception signal amplified by the low noise amplifier 231. Demodulation & frequency conversion circuit 232 comprising mixers MIX1 and MIX2 for conversion, high gain amplification circuits 233a and 233b for amplifying the demodulated I and Q signals and outputting them to baseband circuit 300, and unnecessary waves from the amplified signals Are composed of low pass filters LPF1, LPF2, and the like. The mixers MIX1 and MIX2 output signals having the largest frequency component corresponding to the frequency difference f0-f0L, where f0 is the frequency of the received signal and f0L is the frequency of the signal φL from the frequency dividing circuit 254 side. In this embodiment, since the oscillation frequency of the local oscillation circuit (RFVCO) 252 is set so that the frequency difference f0-f0L is several tens to several hundreds kHz with respect to a reception signal of several GHz, f0≈f0L.
The high-frequency signal processing IC of this embodiment is configured to share the oscillation signal generated by the local oscillation circuit (RFVCO) 252 for transmission and reception.

  The control system circuit 250 includes a control circuit 251 that generates a control signal inside the chip, a local signal that generates a signal that is combined with a reception signal in the mixers MIX1 and MIX2, and a signal that is combined with a signal that is transmitted in the mixers MIX3 and MIX4. An oscillation circuit 252, an RF synthesizer 253 that constitutes a PLL circuit together with the local oscillation circuit 252, and frequency divider circuits 254 and 255 that generate signals shifted in phase by 90 ° while dividing the signal from the local oscillation circuit 252. And a buffer 256 that amplifies the received signal and supplies the amplified signal to the mixers MIX1 and MIX2. The local oscillation circuit 252 is configured by a VCO (voltage controlled oscillation circuit) capable of generating an oscillation signal of 3296 to 3820 MHz necessary for transmission and an oscillation signal φRF of 3476 to 3980 MHz necessary for reception.

  The transmission system circuit 240 includes input circuits 241a and 241b each composed of an attenuator or an amplifier for amplifying the I signal and the Q signal supplied from the baseband circuit 300, and harmonic components from the attenuated or amplified I signal and Q signal. Filter unit 242 composed of low-pass filters LPF3 and LPF4, and the filtered I signal and Q signal and the quadrature signals having a phase difference of 90 ° from the frequency dividing circuit 255 are combined to perform quadrature modulation and up-conversion. The modulation & frequency conversion unit 243 including the mixers MIX3 and MIX4 performed at the same time, the amplification unit 244 that amplifies and outputs the modulated signal, the output level control signal Vcont supplied from the baseband circuit 300, and the power amplifier 120 The gain of the amplifier 244 is controlled from the output detection signal Vdet. And a gain control circuit 245 to be controlled.

  The amplifying unit 244 following the modulation & frequency converting unit 243 is provided with a limiter amplifier LIM having a limiter function for GSM mode that performs GMSK modulation, and a variable gain amplifier VGA for EDGE mode that performs 8-PSK modulation. Yes. The selection of which of the limiter amplifier LIM and the variable gain amplifier VGA is selected is performed by a control signal S1 indicating a selection mode output from the control circuit 251 in response to a command from the baseband circuit 300. Specifically, the limiter amplifier LIM is selected by the control signal S1 in the GMSK modulation mode, and the variable gain amplifier VGA is selected in the 8-PSK modulation mode transmission. Although not particularly limited, these control signals S1 are also supplied to the front end module 100 and used to set the bias point of the power amplifier 120 and the like.

  The baseband circuit 300 supplies a control voltage Vcont for controlling the gain of the variable gain amplifier VGA to the gain control circuit 245 of the high frequency signal processing IC 210. The GSM standard stipulates that the output power of a transmission signal must be within a predetermined time mask. The radio communication system of this embodiment is configured to realize the rise and fall of the output level within the time mask by controlling the gain of the variable gain amplifier VGA with the control voltage Vcont.

  In the high-frequency signal processing IC 210 of this embodiment, a register is provided in the control circuit 251, and this register is configured to be set based on a signal from the baseband circuit 300. Specifically, a synchronization clock signal CLK, a data signal DATA, and a load enable signal LE as a control signal are supplied from the baseband circuit 300 to the high-frequency signal processing IC 210. The control circuit 251 When the load enable signal LE is asserted to a valid level, the data signal DATA transmitted from the baseband circuit 300 is sequentially fetched in synchronization with the clock signal CLK and set in the register. Although not particularly limited, the data signal DATA is transmitted serially.

FIG. 2 shows a main part of a first embodiment of the receiving system circuit 230 of the RF module 200 to which the present invention is applied.
In this embodiment, on the chip of the high-frequency signal processing IC 210, the power supply voltage terminal T1 of the frequency conversion circuit 232 (mixers MIX1, 2) and the power supply voltage terminal T2 of the local oscillation circuit 252 are provided as separate terminals. . Also on the ceramic substrate 211 on which the high-frequency signal processing IC 210 is mounted, the power supply pad P1 for the frequency conversion circuit 232 and the power supply pad P2 for the local oscillation circuit 252 are provided as separate pads. T1 and P1 and T2 and P2 are connected by lines 212a and 212b, and the power supply voltage Vcc applied from the outside of the module is supplied from P1 to T1 and from P2 to T2. Inductors L1 and L2 are inserted in the middle of these power supply lines 212a and 212b, respectively. The optimum inductance values of the inductors L1 and L2 are several nH to several tens nH.

  In a module in which the inductors L1 and L2 are not inserted, the low-noise amplifier (LNA) 231 side moves from the desired wave to the frequency conversion circuit 232 together with the desired wave W0 having the frequency fo as shown in FIG. When the interference wave Wb having the frequencies fb1 and fb2 and having a higher intensity than the desired wave is input, the frequency component of the interference wave passes through the power supply line 212a of the frequency conversion circuit 232 and the power supply line 212a and the local oscillation circuit. As shown in FIG. 3B, the coupling capacitor Cs between the power supply line 212b of 252, the power supply line 212b, the frequency dividing circuit 254, and the buffer 256 are superimposed on the local oscillation signal φL of the frequency foL. The leakage component (spurious signal) of the interference wave having relatively large frequencies fbL 1 and fbL 2 is input to the frequency conversion circuit 232. As a result, an interference wave component appears at the output of the frequency conversion circuit 232.

  On the other hand, in the module of the embodiment in which the inductors L1 and L2 are inserted in the middle of the power supply lines 212a and 212b, the desired wave W0 having the frequency fo is transferred from the low noise amplifier 231 side to the frequency conversion circuit 232 as shown in FIG. When the disturbing wave Wb having the frequencies fb1 and fb2 is input, the leak component of the disturbing wave is attenuated by the inductors L1 and L2 in the middle of the power supply lines 212a and 212b, and is relatively as shown in FIG. Since the leakage components (spurious signals) of the interference waves having small frequencies fbL1 ′ and fbL2 ′ are only superimposed on the local oscillation signal φL of the frequency foL and input to the frequency conversion circuit 232, the frequency conversion circuit 232 Almost no disturbing wave component appears in the output. Therefore, the deterioration of AM suppression characteristics defined by the GSM standard is reduced.

FIG. 4 shows a main part of a second embodiment of the receiving system circuit 230 of the RF module 210 to which the present invention is applied.
In the embodiment of FIG. 2, the inductors L1 and L2 are inserted in the middle of the power supply lines 212a and 212b for supplying the power supply voltage Vcc to the frequency conversion circuit 232 (mixers MIX1 and MIX2) and the local oscillation circuit 252, respectively. On the other hand, in the embodiment of FIG. 4, in addition to the frequency conversion circuit 232 and the local oscillation circuit 252, the buffer 256 also has its power supply voltage terminal provided as a separate terminal T3, and this terminal T3 is shared with the local oscillation circuit 252. A power supply voltage Vcc applied from the outside of the module is connected to the power supply voltage pad P2 through a separate power supply line 212c. In this embodiment, inductors L1 and L2 are inserted in the middle of power supply lines 212a and 212c for supplying a power supply voltage Vcc to the frequency conversion circuit 232 and the buffer 256, respectively.

  Depending on the arrangement of the power supply voltage terminals provided on the chip of the high-frequency signal processing IC 210, the arrangement of the power supply pads on the module substrate, and the layout of the power supply lines 212a, 212b, and 212c, the inductor L1 may be provided in the middle of the power supply lines 212a and 212c. , L2 may be inserted to reduce spurious due to interference waves. Therefore, in such a case, it is desirable to apply the embodiment of FIG.

FIG. 5 shows a main part of a third embodiment of the receiving system circuit 230 of the RF module 210 to which the present invention is applied.
In this embodiment, the ground potential GND applied to the ground pads P3 and P4 on the substrate from the outside of the module is midway along the ground lines 213a and 213b for supplying the frequency conversion circuit 232 (mixers MIX1 and 2) and the local oscillation circuit 252. Inductors L1 and L2 are inserted respectively. Depending on the arrangement of the power supply voltage terminals provided on the chip of the high frequency signal processing IC 210, the arrangement of the power supply pads on the module substrate, and the layout of the power supply lines 212a, 212b, and 212c, the inductor L1 may be provided in the middle of the ground lines 213a and 213b. , L2 may be inserted to reduce spurious due to interference waves. Therefore, in such a case, it is desirable to apply the embodiment of FIG.

  Note that both the embodiment of FIG. 2 and the embodiment of FIG. 5 may be applied, thereby further reducing spurious. However, doing so increases the number of components to be mounted on the module substrate and makes it difficult to reduce the size of the module, so the effect of applying both is not as significant as the effect of applying only one of them. In some cases, it is desirable to apply only one of the embodiments.

  FIG. 6 shows a specific example of the device structure of the RF module 210 of the first embodiment. Note that FIG. 6 does not accurately represent the structure of the RF module of the embodiment, but is a structural diagram in which some components and wirings are omitted so that the outline thereof can be understood.

  As shown in FIG. 6, the substrate of the module of the present embodiment has a structure in which a plurality of dielectric layers 211 made of a ceramic plate such as alumina are laminated and integrated. A conductor layer 212 made of a conductive material such as copper having a predetermined pattern and gold-plated on the surface is provided on the front surface or the back surface of each dielectric layer 211. Patterns 212a to 212d having a mesh on the surface of the substrate are also conductive patterns constituting a power line made of a conductor layer and microstrip lines as signal transmission paths. In addition, each dielectric layer 211 is provided with a hole called a through hole for connecting the conductive patterns on the front and back of each dielectric layer 211, and a conductive material is filled in the hole to form a via 213. Has been.

  In the module of the embodiment of FIG. 6, for example, six dielectric layers 211 are laminated, and a conductor layer 212p serving as a signal input / output pad and a conductor layer 212p serving as a power supply pad are formed on the back surface of the bottom dielectric layer. In addition, a conductor layer 212g serving as a ground layer is formed, and the power supply voltage Vcc and the ground potential GND can be applied from the outside of the module. A plurality of conductor layers serving as signal input / output pads and conductor layers 212p serving as power supply pads are formed at a predetermined pitch along the periphery of the back surface of the lowermost dielectric layer, and ground layers are formed in regions other than these pads. The conductor layer 212g is formed almost entirely.

  The power supply voltage Vcc and the ground potential GND applied to the power supply pad and the ground layer are the uppermost dielectric through the via 213 formed in the upper dielectric layer and the conductive pattern 212 composed of the conductor layer. The conductive patterns 212a, 212b, and 212g formed on the surface of the layer are drawn out.

  On the first dielectric layer 211, conductive patterns 212e and 212f having bonding portions are formed at a predetermined interval from the conductive patterns 212a and 212b, and between the conductive patterns 212a and 212e and 212b. Inductance elements 214a and 214b made of discrete components are mounted between 212f and 212f, respectively. Here, the bonding part and the conductive patterns 212a and 212b can be regarded as power supply nodes. At the same time, a recess is formed in a part of the substrate from the first layer to the third dielectric layer 211, and the semiconductor chip 210 ′ on which the high-frequency signal processing IC 210 is formed is mounted in the recess. The external terminals (pads) on the upper surface of the semiconductor chip 210 ′ and the pad portions of the conductive patterns 212e and 212f on the surface of the dielectric layer 211 are electrically connected by bonding wires 215a and 215b.

  Further, a conductive pattern 212g serving as a ground line is formed on the first dielectric layer 211 so as to surround the semiconductor chip 210 ′, and an external terminal for applying a ground potential to the semiconductor chip 210 ′. Are formed, and the external terminals and the conductive pattern 212g on the dielectric layer 211 are electrically connected by a plurality of bonding wires 215c, 215d, 215e, and the like. In addition, conductive patterns 212h, 212i... Serving as microstrip lines constituting the impedance matching circuit 222 shown in FIG. 1 are formed on the surface of the first dielectric layer 211, and impedance matching is performed. Discrete components 216a, 216b, 216c,... Such as a capacitance element and an inductance element constituting the circuit 222 and the band pass filter 261, and a SAW filter element 221 are mounted.

  The capacitor constituting the impedance matching circuit 222 may be a discrete component, but may be configured as an interpolating capacitor with conductive patterns formed so as to face each other on the front and back of the dielectric layer 211 of either layer. Good. In the embodiment, it has been described that the inductance elements 214a and 214b made of discrete components are connected in order to reduce the leakage of the interference wave. However, instead of the discrete components, the front surface or the back surface of the dielectric layer 211 of any one of the layers. An interpolated inductance element made of a spiral wiring pattern formed in the above may be used, or another element having an inductance component such as an element called a ferrite bead may be used.

  The ferrite bead has a structure in which a current-carrying internal electrode is embedded in a ferrite element, and is an element that absorbs a high-frequency current component when the ferrite acts as a magnetic substance. In the module prototyped by the present inventors, AM suppression characteristics were better when ferrite beads were used than when inductance elements were used.

  FIG. 7 shows AM suppression characteristics of a module to which the embodiment of the present invention is applied and a module to which the embodiment is not applied. In FIG. 7, symbol A is an AM suppression characteristic when a general choke coil is used as an inductance element, symbol B is an AM suppression characteristic when a ferrite bead is used as an inductance element, and symbol C is an inductance element. The AM suppression characteristics in the case where no inductance element is inserted in the middle of the power line or the ground line are shown. FIG. 7 shows that by applying the embodiment, the AM suppression characteristic can be suppressed to 20% or less defined by the GSM standard.

  The device structure of the RF module 210 of the second and third embodiments is basically the same except that the layout of the conductive pattern 212 formed on the surface of the dielectric layer 211 and the positions where the inductance elements 213a and 213b are mounted are slightly different. Since this is the same as FIG. 6, a specific structure and description thereof will be omitted.

  The invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Nor. For example, in the above-described embodiment, the power supply line for supplying the power supply voltage to the mixer and the VCO, the power supply line for supplying the power supply voltage to the mixer and the buffer for the oscillation signal, or the ground line for supplying the ground potential to the mixer and the VCO. In the above description, an inductance element is inserted to block leakage of interfering waves. However, when priority is given to downsizing the module, a power supply voltage or ground potential is applied to the mixer, the VCO, and the oscillation signal buffer. You may make it insert an inductance element in the middle of any one of the power supply line or ground line to supply.

  In that case, it is preferable to determine by measuring the location where the leakage of the interference wave can be cut off most effectively by inserting the inductance element. By the way, in the RF module prototyped by the present inventor, the leakage of the interference wave was large in the order of the VCO, the mixer, and the buffer. This order was determined based on the position of the power supply pad formed on the module substrate and the power supply voltage. Since it is considered that it varies depending on the layout of the conductive pattern to be supplied, the most effective position for inserting the inductance element varies depending on the structure of the device.

  In addition, when priority is given to blocking of interference wave leakage, an inductance element is provided in the middle of the power supply line or ground line for supplying the power supply voltage to the mixer, the VCO, and the oscillation signal buffer, or in the middle of the power supply line and the ground line. May be inserted. Further, in the embodiment, the inductance elements (214a, 214b) to be inserted in the middle of the power supply line are mounted between the conductive patterns formed on the surface of the first dielectric layer 211 at a predetermined interval. However, the mounting position is not limited to this, and may be anywhere between the power supply pad of the module and the power supply terminal of the circuit.

  Further, in the embodiments, the case where a multilayer substrate is used as the module substrate has been described. However, even when a single-layer substrate is used, the present invention can be used when the wiring pitch is narrow or the component mounting density is high. Is considered effective.

  In the above description, the case where the invention made by the present inventor is mainly applied to an RF module constituting a wireless communication system capable of transmitting and receiving GSM signals, which are the fields of use behind the invention, has been described. However, the present invention is not limited to this. For example, dual band systems capable of handling signals in two frequency bands such as 900 MHz band GSM and 1800 MHz band DCS (Digital Cellular System), and in addition to 900 MHz band GSM and DCS, For example, the present invention can be used for an RF module constituting a wireless communication system such as a mobile phone and a wireless LAN capable of handling a quad band system capable of handling 850 MHz band GSM and 1900 MHz PCS (Personal Communication System) signals.

It is a block diagram which shows the structural example of the high frequency power amplification electronic component (RF module) to which this invention is applied, and a radio | wireless communications system using the same. It is a block diagram which shows the principal part of the 1st Example of the receiving system circuit of RF module to which this invention is applied. (A) is a graph showing the intensity of a desired wave and an interference wave inputted from the LNA side of the reception system circuit of the RF module of the embodiment to the frequency conversion circuit, and (B) is an RFVCO side of the reception system circuit to which the embodiment is not applied. (C) is a graph showing the intensity of the leakage component of the local oscillation signal and interference wave input from the RF to the frequency conversion circuit, and (C) is the local oscillation signal input to the frequency conversion circuit from the RFVCO side of the receiving system circuit to which the embodiment is applied. It is a graph which shows the intensity | strength of the leak component of an interference wave. It is a block diagram which shows the principal part of the 2nd Example of the receiving system circuit of RF module to which this invention is applied. It is a block diagram which shows the principal part of the 3rd Example of the receiving system circuit of RF module to which this invention is applied. It is a partial cross section perspective view which shows the specific example of the device structure of RF module of 1st Example. It is a graph which shows the AM suppression characteristic of the module which applied the Example of this invention, and the module which is not applied.

Explanation of symbols

100 Front-end module 120 High-frequency power amplifier circuit 200 RF module 210 High-frequency signal processing IC
222 Impedance matching circuit 230 Reception system circuit 231 Low noise amplifier 232 Frequency conversion circuit for up-conversion 233 High gain amplifier circuit 240 Transmission system circuit 241 Input circuit (attenuator or amplifier)
243 Frequency conversion circuit for down-conversion 244 Amplifier section 245 Gain control circuit 250 Control system circuit 252 Local oscillation circuit 256 Buffer 262 Impedance matching circuit 300 Baseband circuit (baseband LSI)
MIX mixer LPF low pass filter

Claims (14)

High-frequency signal processing semiconductor incorporating an oscillation circuit for generating an oscillation signal to be combined with a reception signal, and a frequency conversion circuit for combining the signal from the oscillation circuit and the reception signal and converting the signal to a signal in a baseband frequency band An electronic component for high-frequency signal processing in which an integrated circuit is mounted on a multilayer dielectric substrate,
In the middle of a power supply path for supplying a power supply voltage from the first power supply pad provided on the multilayer dielectric substrate to the frequency conversion circuit and from the second power supply pad provided on the multilayer dielectric substrate to the oscillation circuit An electronic component for high-frequency signal processing, wherein an inductance element is interposed at least in the middle of a power supply path for supplying a power supply voltage.   At least a part of the power supply path is formed to be exposed on the mounting surface of the electronic component for high frequency signal processing of the multilayer dielectric substrate, and a part of the cut part is provided in the exposed part, and the cut part is connected The high frequency signal processing electronic component according to claim 1, wherein the inductance element configured by individual components is mounted.   The first and second power supply pads are formed on a surface different from the mounting surface of the high frequency signal processing electronic component of the multilayer dielectric substrate, and the through holes formed in the multilayer dielectric substrate The high frequency signal processing electronic component according to claim 2, wherein the electronic component is electrically connected to a part of the exposed portion of the power supply path.   A high frequency signal processing semiconductor integrated circuit having a plurality of circuits each having a power supply terminal separated from each other and having a power supply voltage supplied from different power supply nodes is mounted on a multilayer dielectric substrate. An electronic component for high-frequency signal processing, wherein an inductance element is connected between a power supply pad provided on the multilayer dielectric substrate and at least one power supply node among the plurality of power supply nodes. Electronic components for high-frequency signal processing.   The power supply node is formed on the mounting surface of the electronic component for high frequency signal processing of the multilayer dielectric substrate, and the power supply pad is formed on a surface different from the mounting surface of the electronic component for high frequency signal processing of the multilayer dielectric substrate. The mounting surface is provided with a second power supply node electrically connected to the power supply pad through a through hole formed in the multilayer dielectric substrate, and the second power supply node and the second power supply node are connected to the power supply pad. The high frequency signal processing electronic component according to claim 4, wherein the inductance element is connected to a power supply node.   A high-frequency signal processing semiconductor integrated circuit having a receiving circuit for converting a high-frequency received signal into a baseband frequency band signal is mounted on a multilayer dielectric substrate, and a power supply voltage is supplied to the receiving circuit via an inductance element. An electronic component for high-frequency signal processing, wherein the electronic component is configured to be supplied.   7. The high-frequency signal processing according to claim 6, wherein the multilayer dielectric substrate is provided with a filter for removing unnecessary waves from the received signal and an impedance matching circuit on a transmission path of the received signal. Electronic components.   8. The high-frequency device according to claim 6, wherein the reception circuit includes a frequency conversion circuit that synthesizes a signal from an oscillation circuit and the high-frequency reception signal to convert the signal into a signal in a baseband frequency band. Electronic components for signal processing.   9. The electronic component for high-frequency signal processing according to claim 6, 7 or 8, further comprising a buffer amplifier that amplifies an output signal of the oscillation circuit and inputs the amplified signal to the frequency conversion circuit.   The high-frequency signal processing electronic component according to claim 1, wherein the inductance element is a ferrite bead.   10. The high-frequency signal processing semiconductor integrated circuit includes a transmission circuit that synthesizes a signal from an oscillation circuit and a transmission signal in a baseband frequency band and directly converts the signal into a high-frequency transmission signal. The electronic component for high-frequency signal processing according to any one of the above.   11. An electronic component for high-frequency signal processing according to claim 10, a second electronic component in which an amplification circuit for amplifying a signal output from the transmission circuit and a transmission / reception switching means are mounted on an insulating substrate, and baseband processing A wireless communication system having a baseband circuit for performing transmission and an antenna connected to the reception circuit and the transmission circuit via the transmission / reception switching means.   9. The high frequency signal processing electronic component according to claim 8, wherein a power supply voltage is supplied to the oscillation circuit via an inductance element.   The high-frequency signal processing electronic component according to claim 9, wherein a power supply voltage is supplied to the buffer amplifier via an inductance element.

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