JP2006134772A - Manufacturing method of display panel, its manufacturing device and display panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a display panel capable of improving manufacturing efficiency. <P>SOLUTION: When an address electrode pattern is formed on a back substrate 1 of a PDP, the surface temperature of the back substrate 1 is so kept as to be set above 60°C, and an address electrode material layer 2A containing, as a main constituent, Al used as a material of address electrodes 2 is formed on the back substrate 1 by an appropriate technique. Thereby, excellent adhesiveness between the address electrodes and the back substrate 1 can be secured even when the address electrodes are each formed as a single-layer structure of a metal material containing Al as a main constituent. Since each address electrode has the single-layer structure of the metal material containing AL as a main constituent, manhours in a photolithography process is reduced, and manufacturing efficiency can remarkably be improved as compared with the case where a conventional address electrode is formed in a three-layer structure of Cr/Al/Cr or Cr/Cu/Cr. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a display panel manufacturing method, a manufacturing apparatus therefor, and a display panel.

  Conventionally, a pair of flat glass substrates are arranged opposite to each other via a discharge space, and the discharge space is partitioned into a plurality of discharge cells by providing a grid-like or stripe-shaped partition wall on one glass substrate inner surface, There is known a plasma display panel that displays an image by selectively emitting light in the plurality of discharge cells (see, for example, Patent Document 1).

  FIG. 1 is an exploded perspective view showing a PDP (plasma display panel) described in Patent Document 1. As shown in FIG. In FIG. 1, reference numeral 100 denotes a PDP, and this PDP 100 includes a front substrate 101 and a rear substrate 102. The front substrate 101 and the rear substrate 102 are arranged to face each other via the discharge space 103. On the inner surface side of the front substrate 101, a plurality of transparent electrodes 104 arranged in parallel to each other, a bus electrode (not shown) provided along the transparent electrodes 104, and a plurality of black stripes 105 made of a light-absorbing material, A dielectric layer 106, a protective film 107, and the like are provided. On the inner surface side of the back substrate 102, a plurality of address electrodes 108, an address electrode protection layer 109, a cross-shaped partition 110, and the like, which are arranged in parallel with each other, are provided. Then, phosphor layers (112R, 112G, and 112B) of the three primary colors of red (R), green (G), and blue (B) are sequentially formed in the plurality of discharge cells 111 formed by the barrier ribs 110, respectively. ing. The inside of the discharge space 101, that is, the inside of each discharge cell 111, is filled with a discharge gas such as neon gas and sealed with the outside air.

  Here, when the plurality of address electrodes 108 are formed on the inner surface side of the back substrate 102, a metal material layer having a three-layer structure such as Cr / Al / Cr or Cr / Cu / Cr is formed on the entire surface of the back substrate 102 by sputtering or the like. There is known a configuration in which the address electrode 108 is formed by patterning these metal material layers using a photolithography method (see, for example, Patent Document 2). FIG. 2 is a cross-sectional view showing the back substrate 102 when the address electrode 108 is formed on the back substrate 102 with the configuration described in Patent Document 2. As shown in FIG. FIGS. 3 and 4 are diagrams for explaining each manufacturing process when the pattern of the address electrode 108 shown in FIG. 2 is formed on the back substrate 102.

  In FIG. 2, the address electrode 108 is formed on the inner surface of the back substrate 102 made of a glass substrate in a state where a first Cr (chrome) layer 108A1 and an Al (aluminum) layer 108B1 are laminated in order from the bottom to the top. ing.

  In order to form the address electrode 108 as shown in FIG. 2 on the back substrate 102, first, as shown in FIG. 3A, first, the first Cr electrode material is formed on the entire inner surface of the back substrate 102. The layer 108, the Al electrode material layer 108B, and the second Cr electrode material layer 108C are sequentially formed by sputtering. Then, as shown in FIG. 3B, a resist layer 108D, which is a photosensitive material, is uniformly applied and formed on the second Cr electrode material layer 108C. Further, as shown in FIG. 3C, the resist layer 108D formed in the previous step is irradiated with UV light through the electrode pattern mask 108E and exposed, and a resist pattern is formed by a portion of the resist layer 108D that is exposed and cured. 108D1 is formed. Thereafter, as shown in FIG. 4D, an uncured portion of the resist layer 108D that has not been exposed is removed with a developer. 4E, using the resist pattern 108D1 formed in the previous step as a mask, a part of the second Cr electrode material layer 108C not covered with the resist pattern 108D1 is etched with an etching solution for Cr. The second Cr layer 108C1 is formed by removing. Further, in FIG. 4F, using the second Cr layer 108C1 formed in the previous step as a mask, the portion of the Al electrode material layer 108B that is not covered with the second Cr layer 108C1 is removed with an etching solution for Al. Then, an Al layer 108B1 is formed. In FIG. 4G, the resist pattern 108D1 is removed with a resist stripper. Thereafter, the second Cr layer 108C1 and the portion of the first Cr electrode material layer 108A that is not covered with the Al layer 108B1 are removed with a Cr etching treatment solution, as shown in FIG. An address electrode 108 in which the first Cr layer 108A1 and the Al layer 108B1 are sequentially stacked is formed. In addition, the structure which forms an electrode on a glass substrate as mentioned above is not only PDP, but, for example, FED (Field Emission Display), LED (Light Emitting Diode) display panel, organic EL (Electro Luminescence), liquid crystal display Such a configuration is common to display panels.

JP 2002-334660 A (refer to the left column on page 2-the right column on page 2) JP 2003-16946 A (refer to the left column on page 4)

  By the way, in the configuration of Patent Document 2 described above, the first Cr electrode material layer 108A is provided between the Al layer 108B1 and the back substrate 102 in order to bring the Al layer 108B1 into close contact with the back substrate 102. The second Cr electrode material layer 108C is provided between the Al electrode material layer 108B and the resist layer 108D as a mask or the like when a part of the Al electrode material layer 108B is etched.

  However, in the configuration described in Patent Document 2 described above, a part of the first Cr electrode material layer 108A and the second Cr electrode material layer 108C is removed by the etching solution for Cr. Hexavalent chromium which is a harmful substance will be included. For this reason, the problem that a waste liquid process for removing hexavalent chromium from a waste liquid appropriately takes time and manufacturing efficiency may be reduced is cited as an example. In addition, since the address electrode 108 is formed after a metal material layer having a three-layer structure such as Cr / Al / Cr or Cr / Cu / Cr is formed on the back substrate 102, there are many manufacturing processes. As an example, there is a problem that cost and manufacturing time may be increased.

  In view of the above-described problems, it is an object of the present invention to provide a display panel manufacturing method, a manufacturing apparatus, and a display panel that can improve manufacturing efficiency.

  The invention according to claim 1 is a method of manufacturing a display panel by forming a plurality of electrode patterns on at least one glass substrate of a pair of glass substrates arranged opposite to each other with a light emitting region interposed therebetween, Production of a display panel characterized in that a surface temperature of one glass substrate is maintained at 60 ° C. or more, and a metal material layer mainly composed of Al as a material of the electrode is formed on the glass substrate. Is the method.

  The invention according to claim 7 is an apparatus for manufacturing a display panel by forming a plurality of electrode patterns on at least one glass substrate among a pair of glass substrates arranged opposite to each other with a light emitting region interposed therebetween, A heating part that heat-treats one glass substrate to 60 ° C. or more, and a metal material layer mainly composed of Al as a material of the electrode are formed on the one glass substrate that is heat-treated by the heating part. Forming the metal material layer on the one glass substrate while maintaining the surface temperature of the one glass substrate at 60 ° C. or higher. It is the manufacturing apparatus of the display panel characterized.

  The invention according to claim 9 is a display panel manufactured by the method for manufacturing a display panel according to any one of claims 1 to 6.

[Configuration of the embodiment]
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a configuration in which a plurality of address electrode patterns are formed on the back substrate of a plasma display panel as a display panel will be described as an example. However, the present invention is not limited to this, and for example, FED, LED display panel, organic EL Any configuration can be applied as long as the electrode pattern is formed on the glass substrate, such as a liquid crystal display. FIG. 5 is a perspective view showing a back substrate of the plasma display panel according to the present embodiment. FIG. 6 is a schematic configuration diagram of a film forming apparatus. FIG. 7 shows a process of forming address electrodes on the back substrate, (A) is a cross-sectional view of the back substrate after the first step, and (B) is a cross-section of the back substrate after the second step. (C) is a cross-sectional view of the back substrate after the third step, (D) is a cross-sectional view of the back substrate after the fourth step, and (E) is a view after the fifth step. It is sectional drawing of a back substrate, (F) is sectional drawing of the back substrate after a 6th process. Note that the dimensions of the address electrodes are relatively large with respect to the substrate for the sake of explanation and drawing, and the number of address electrodes is omitted from the actual illustration. In addition, the dimensions of the discharge cells formed by the barrier ribs are also relatively large with respect to the substrate for convenience of explanation and drawing, and the number thereof is greatly omitted from the actual display.

(Configuration of display panel)
In the present embodiment, reference numeral 1 denotes a back substrate of a plasma display panel. The back substrate 1 is, for example, soda lime glass or high strain point glass having a strain point higher than that of soda lime glass (eg, PD200 manufactured by Asahi Glass Co., Ltd.). ) Etc. are rectangular flat glass plates. The back substrate 1 includes an address electrode 2 as a plurality of electrode patterns, an address electrode protection layer 3 that is a dielectric layer, a partition wall 4, and three primary colors of red (R), green (G), and blue (B). Phosphor layers (5R, 5G, 5B), and the like. The region of the back substrate 1 where the partition walls 4 are formed becomes a discharge space as a light emitting region, and the front substrate 1A is disposed facing the back substrate 1 across the discharge space. The surface of the front substrate 1A opposite to the surface where the discharge space is formed is a display surface. The configuration of the front substrate 1A is the same as that of the conventional back substrate 102 shown in FIG.

  The address electrodes 2 are provided in close contact with the inner surface where the discharge space of the rear substrate 1 is formed, and are formed in parallel along one end side direction of the rear substrate 1 as a plurality of strip patterns. The address electrode 2 is made of a metal material whose main component is Al (aluminum) and is formed as a single layer structure. The metal material used for the address electrode 2 is Al metal alone or at least one of Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, Pd, Pt, Au, and Zn using Al as a base material. Al alloy included as a product. And it is preferable that the addition amount of these additives is 20 weight% or less. More preferably, it is 5% by weight or less.

  The address electrode protective layer 3 is made of glass paste, and is formed on the inner surface of the rear substrate 1 so as to cover the address electrodes 2. The barrier ribs 4 are formed, for example, in a grid pattern using the same glass paste as that of the address electrode protective layer 3, and a plurality of rectangular discharge cells 40 are formed by partitioning the discharge space with the grid-shaped barrier ribs 4. The discharge cell 40 is filled with a rare gas when the back substrate 1 and the front substrate 1A are bonded together. The phosphor layers (5R, 5G, and 5B) of the three primary colors of red (R), green (G), and blue (B) are sequentially formed inside the plurality of discharge cells 40. The phosphor layers 5R, 5G, and 5B are excited by ultraviolet light generated in the respective discharge cells 40, and emit visible light of three primary colors of red (R), green (G), and blue (B).

(Display panel manufacturing equipment)
Next, a film forming apparatus constituting a part of a display panel manufacturing apparatus for manufacturing the rear substrate 1 will be described with reference to FIG. In FIG. 6, reference numeral 10 denotes a film forming apparatus. This film forming apparatus 10 forms an Al-based metal material layer mainly composed of Al as a material of the address electrode 2 on the entire inner surface side of the back substrate 1. A film forming process is performed. The film forming apparatus 10 includes a transfer means (not shown) for transferring the back substrate 1, a film forming preparation chamber 20, a film forming section 30 that is a main part for performing a film forming process, a discharge chamber (not shown), and the like. It has.

  The transfer means transfers the rear substrate 1 into the film formation preparation chamber 20 and then transfers the film from the film formation preparation chamber 20 into the film formation unit 30. In addition, the transfer means transfers the rear substrate 1 from the film forming unit 30 to the discharge chamber, and further transfers the back substrate 1 from the discharge chamber to the next process apparatus.

  The film formation preparation chamber 20 is a room for heat-treating the back substrate 1 in advance under high vacuum in order to perform the film formation process on the back substrate 1 in the film forming unit 30, and the inside thereof is appropriately sealed. . The film forming preparation chamber 20 is provided with a heater 21 as a heating unit inside, and a vacuum pump (not shown) is provided outside thereof. The heater 21 is a radiant heating type heater that heats the back substrate 1. The heater 21 is provided, for example, in the upper part of the film forming preparation chamber 20, and is configured to heat the back substrate 1 conveyed by the conveying means from above.

  The heater 21 heats the back substrate 1 in a temperature range of 60 ° C. or higher. More preferably, the heater 21 heat-treats the back substrate 1 in a temperature range of 60 ° C. or higher and 100 ° C. or lower. For example, when the temperature of the back substrate 1 is 60 ° C. or lower, when the film forming unit 30 performs the film forming process on the back substrate 1, the metal material thin film mainly composed of Al and the back substrate 1 It is not possible to ensure sufficient adhesion. In addition, about the adhesiveness of the Al type metal material thin film which has Al as a main component, and the back substrate 1, it verifies in the experimental example mentioned later. On the other hand, when the temperature of the back substrate 1 is 100 ° C. or higher, there is no problem in terms of product adhesion with the back substrate 1, but there is a possibility that each part of the film forming apparatus 10 may be affected by heat, or the film is formed. Large heat-resistant means must be provided on the inner wall of the apparatus 10 and the manufacturing cost may increase. Therefore, it is desirable that the heater 21 heat-treats the back substrate 1 in a temperature range of 60 ° C. or higher and 100 ° C. or lower. The vacuum pump maintains the inside of the film formation preparation chamber 20 in a high vacuum state.

  The film forming unit 30 performs a film forming process on the back substrate 1 and is appropriately sealed in a state where the inside is filled with an inert gas such as Ar gas. The film forming unit 30 includes a heater (not shown), a film forming processing unit (not shown), a film forming source 31 serving as a material source for the address electrodes 2 of the rear substrate 1, a substrate support unit (not shown), and a vacuum pump (not shown). , Etc. The heater is a radiant heating type heater that heats the back substrate 1. This heater heats the back substrate 1 inside the film forming unit 30, and adjusts the temperature of the back substrate 1 to a temperature range of 60 ° C. or more and 100 ° C. or less when a film forming process is performed on the back substrate 1. The film forming unit performs a vacuum film forming process by a sputtering method or a vacuum evaporation method in which the material component of the film forming source 31 is in close contact with the back substrate 1 at an atomic level under high vacuum. The film forming source 31 is made of the same material as the address electrode 2 and is provided, for example, below the film forming chamber. The substrate support unit supports the back substrate 1 transported by the transport unit, and holds the processing surface of the back substrate 1 so as to face the film forming source 31. The vacuum pump maintains the inside of the film forming unit 30 in a high vacuum state similar to that of the film forming preparation chamber 20.

  In the discharge chamber, the back substrate 1 subjected to the film forming process in the film forming unit 30 is installed, and the back substrate 1 is returned from the high vacuum state to the atmospheric pressure in the discharge chamber.

(Display panel manufacturing method)
Next, a process of forming the address electrode 2 as an electrode pattern on the back substrate 1 will be described with reference to FIGS.

  First, the surface of the back substrate 1 is sufficiently cleaned in advance by ultrasonic cleaning or water washing using a neutral detergent. Then, as shown in FIG. 7A, an address electrode material layer 2A, which is a material of the address electrode 2, is formed on the entire inner surface of the back substrate 102.

  Specifically, the back substrate 1 whose surface has been subjected to a cleaning process is carried into the film forming preparation chamber 20 of the film forming apparatus 10 shown in FIG. After the rear substrate 1 is carried in, the film formation preparation chamber 20 is sealed, the inside of the film formation preparation chamber 20 is brought into a high vacuum state by a vacuum pump, and the temperature of the rear substrate 1 is set to 60 ° C. or higher by the heater 21. It is adjusted to below ℃.

  When the temperature of the rear substrate 1 is adjusted to 60 ° C. or higher and 100 ° C. or lower in the film formation preparation chamber 20, the rear substrate 1 is transferred to the film forming unit 30, and the processing target surface of the rear substrate 1 is a film formation source 31 is supported by the substrate support portion so as to face the substrate 31. The inside of the film forming unit 30 is adjusted to a high vacuum state similar to the inside of the film forming preparation chamber 20 by a vacuum pump, and the back substrate 1 is heated to a temperature range of 60 ° C. to 100 ° C. by a heater. And a film-forming process is implemented with respect to the whole inner surface side surface of the back substrate 1 by a sputtering method or a vacuum evaporation method with a vacuum film-forming apparatus. Here, in the sputtering method or the vacuum evaporation method, the material component of the film forming source 31 jumps out toward the processing surface side of the back substrate 1 and is vacuum-deposited on the processing surface of the back substrate 1 at the atomic level. In addition, since the material component popping out from the film forming source 31 moves linearly, the material component popping out from the film forming source 31 does not reach the opposite side of the processing surface of the back substrate 1. This film forming process is performed for a predetermined time, and the address electrode material layer 2A having a predetermined film thickness is uniformly formed on the processing surface side of the back substrate 1. When the address electrode material layer 2A is formed with a predetermined film thickness, the rear substrate 1 is transferred to the discharge chamber.

  Thereafter, when the back substrate 1 is returned from the high vacuum to the atmospheric pressure in the discharge chamber, the back substrate 1 proceeds to the next photoresist process. 7B, on the surface of the address electrode material layer 2A of the back substrate 1, a resist layer 2B having excellent adhesion to a metal material that is a photosensitive material and has Al as a main component is film laminated or the like. To form uniformly. Then, as shown in FIG. 7C, the formed resist layer 2B is irradiated and exposed to UV light through the address electrode pattern mask 2C.

  Further, as shown in FIG. 7D, after the resist layer 2B is exposed to light, the uncured portion of the resist layer 108D that has not been exposed to light is removed with a developer, whereby the resist layer 2B. Of these, only the exposed and cured portion remains on the back substrate 1, and a resist pattern 2B1 is formed. The back substrate 1 is washed with water and dried, and then subjected to a heat treatment, that is, a post-bake treatment in order to improve the adhesion between the address electrode material layer 2A and the resist pattern 2B1.

  Thereafter, as shown in FIG. 7E, using the resist pattern 2B1 formed in the previous step as a mask, a portion of the address electrode material layer 2A that is not covered with the resist pattern 2B1 is removed with an etching solution for Al. Then, the address electrode 2 is formed. After the etching process, the back substrate 1 is washed with water and dried. Next, in FIG. 7F, only the plurality of address electrodes 2 remain on the inner surface of the back substrate 1 by removing the resist pattern 2B1 with a resist stripping solution. Then, the back substrate 1 is washed with water and dried.

  Here, the metal material used for the address electrode 2 is an Al alloy containing at least one of Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, Pd, Pt, Au, and Zn as additives. Since it has excellent corrosion resistance, it is not corroded by the developing solution in the developing step shown in FIG. 7D or the resist removing solution in the resist removing step shown in FIG. The corrosion resistance of the address electrode 2 will be shown in an experimental example described later.

  After the address electrode 2 is formed on the inner surface of the back substrate 1, the address electrode protection layer 3 and the partition 4 are formed on the address electrode 2. Thereafter, the back substrate 1 is baked, and the address electrode protective layer 3 and the partition 4 are solidified. Further, phosphor pastes of three primary colors of red (R), green (G), and blue (B) are applied to the inside of the discharge cells 40 formed by the barrier ribs 4 by screen printing or the like, and these phosphor pastes are baked. . By this firing treatment, the phosphor paste is solidified to form phosphor layers (5R, 5G, 5B). Further, a sealing material made of glass paste is applied to the end portion of the back substrate 1, the back substrate 1 and the front substrate 1A manufactured in a separate process are bonded together, and the sealing material is sintered, thereby causing the PDP. Is almost completed.

  Here, in the baking process such as the post-baking process, the baking process of the partition walls 4, the baking process of the phosphor paste, and the baking process of the sealing material, the back substrate 1 is subjected to a high temperature such as 600 ° C., for example. Be exposed. At this time, both the address electrodes 2 are also exposed to a high temperature, and atomic diffusion occurs inside the address electrodes 2. As a result, the electrical conductivity of the address electrode 2 changes. However, since the address electrode 2 is formed as a single layer structure with a metal material mainly composed of Al (aluminum), the resistance value hardly changes in the subsequent firing process after being fired once. The relationship between the firing step and the resistance value of the address electrode 2 will be shown in an experimental example described later.

  Further, in the above-described firing process, the address electrode 2 made of Al alone or an Al-based alloy to which various additive elements are added does not deteriorate in corrosion resistance after being exposed to a high temperature. This has been shown in the experimental examples described below.

  In the PDP manufactured with the above configuration, visible light emitted from the phosphor layers 5R, 5G, and 5B passes through the front substrate 1A and is displayed from the display surface side of the front substrate 1A. At this time, all visible light generated in the phosphor layers 5R, 5G, and 5B does not go to the display surface side of the front substrate 1A, but also goes to the back substrate 1 side. The light traveling toward the back substrate 1 is reflected by the address electrodes 2 and travels toward the front substrate 1A. Here, since the address electrode 2 is formed of a metal material mainly composed of Al having a high reflectance, the light directed toward the back substrate 1 is reflected with high efficiency.

  And since Al used as the material of the address electrode 2 is a metal material that is lighter than materials such as Cu and Cr, the PDP manufactured by the above configuration is lightened as a whole. In addition, since the additive amount of the additive is adjusted to 20% by weight or less in the metal material mainly composed of Al which is the material of the address electrode 2, the additive reduces the reflectivity of the address electrode 2 or the PDP. There is no effect of increasing the weight of the.

[Display Panel Manufacturing Method, Manufacturing Apparatus, and Operational Effect of Display Panel]
As described above, in the above embodiment, when the address electrode 2 is formed on the rear substrate 1 of the PDP, the surface temperature of the rear substrate 1 is maintained at 60 ° C. or higher and an appropriate method is used. An address electrode material layer 2 </ b> A mainly composed of Al, which is a material of the address electrode 2, is formed on the back substrate 1. For this reason, even if the address electrode 2 is formed as a single layer structure of a metal material containing Al as a main component, good adhesion between the address electrode 2 and the back substrate 1 can be secured. Further, since the address electrode 2 has a single-layer structure of a metal material mainly composed of Al, the number of steps in the photolithography process is reduced, and the conventional three-layer structure such as Cr / Al / Cr and Cr / Cu / Cr is used. Manufacturing efficiency can be greatly improved as compared with the case where the address electrode is formed. In addition, since Cr is not used for the address electrode 2, the waste liquid after the etching process in the photolithography process does not contain hexavalent chromium, so that it is possible to solve the problem that the conventional waste liquid process is troublesome.

  Further, the back substrate 1 is exposed to a high temperature such as 600 ° C. in a baking process such as a post-baking process, a baking process of the partition walls 4, a baking process of a phosphor paste, and a baking process of a sealing material. Is done. At this time, since the address electrode 2 is formed as a single layer structure with a metal material containing Al (aluminum) as a main component, the resistance value hardly changes in the subsequent baking process after being once baked. For this reason, the resistance value of the address electrode 2 in the completed PDP can be easily controlled.

  When the address electrode material layer 2A is formed on the back substrate 1, the surface temperature of the back substrate 1 is maintained at 100 ° C. or less by the heater 21 in the film formation preparation chamber 20 and the heater in the film formation unit 30. Is done. For this reason, sufficient adhesion between the back substrate 1 and the address electrode material layer 2A made of a metal material mainly composed of Al can be secured. Further, each part of the film forming apparatus 10 is not affected by the heat of the heater 21 in the film forming preparation chamber 20 and the heater in the film forming part 30, and it is necessary to provide a large heat-resistant means on the inner wall of the film forming apparatus 10 or the like. Disappear.

  Further, the film forming apparatus 10 performs a film forming process on the entire inner surface side of the back substrate 1 by a sputtering method or a vacuum evaporation method. Therefore, the material component of the film forming source 31 jumps out toward the processing surface side of the back substrate 1 and is vacuum-deposited on the processing surface of the back substrate 1 at the atomic level. Therefore, a dense and uniform address electrode material layer 2A can be formed on the processing surface side of the back substrate 1. In addition, since the material component popping out from the film forming source 31 moves linearly, the material component popping out from the film forming source 31 does not reach the opposite side of the processing surface of the back substrate 1. For this reason, it is not necessary to devise special measures so that the material component of the film forming source 31 does not adhere to the opposite side of the processing surface of the back substrate 1.

  The metal material used for the address electrode 2 is made of at least one of Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, Pd, Pt, Au, and Zn using Al metal alone or Al as a base material. It consists of Al alloy contained as an additive. For this reason, since the address electrode 2 has excellent corrosion resistance, it is not corroded by the resist stripping solution even in the resist stripping step in FIG.

  Further, the back substrate 1 is exposed to a high temperature such as 600 ° C. in a baking process such as a post-baking process, a baking process of the partition walls 4, a baking process of a phosphor paste, and a baking process of a sealing material. Is done. At this time, the address electrode 2 is similarly exposed to a high temperature, but the corrosion resistance of the Al-based metal material layer used as the address electrode 2 is not lowered after the heat treatment. For this reason, it is possible to prevent a decrease in yield in the manufacturing process of the PDP.

  In the PDP manufactured with the above configuration, visible light emitted from the phosphor layers 5R, 5G, and 5B is transmitted through the front substrate 1A and displayed from the display surface side of the front substrate 1A. At this time, all visible light generated in the phosphor layers 5R, 5G, and 5B does not go to the display surface side of the front substrate 1A, but also goes to the back substrate 1 side. The light traveling toward the back substrate 1 is reflected by the address electrodes 2 and travels toward the front substrate 1A. Here, since the address electrode 2 is formed of a metal material mainly composed of Al having a high reflectance, the light directed toward the back substrate 1 is reflected with high efficiency. Therefore, the PDP can display a clear image even with low power. Moreover, since Al used as the material of the address electrode 2 is a lighter metal material than materials such as Cu and Cr, a lighter PDP can be manufactured.

  Further, the additive amount of the additive is adjusted to 20% by weight or less in the metal material mainly composed of Al which is the material of the address electrode 2. Therefore, it is possible to use Al, Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, Pd, Pt, Au, and Zn as additives without using Cr having excellent oxidation resistance. It is possible to reinforce the oxidation resistance. Further, the reflectance of the address electrode 2 is not lowered by the additive, and the weight of the PDP is not increased. That is, it is possible to manufacture a lightweight PDP having good luminous efficiency.

[Experimental Example 1]
Next, Experimental Example 1 for confirming the effect of the present embodiment will be described. As Example 1 and Example 2 of the present embodiment, two samples in which electrodes composed of a single layer of an Al alloy having different film thickness were formed on a glass substrate were produced. Further, as Comparative Examples 1 to 3, an electrode made of a metal material layer having a Cr / Al two-layer structure was formed on a glass substrate, and three samples differing only in the thickness of the Al layer were produced. These samples were prepared by sputtering, and the Al alloy used for the Al layer was Al3003 (JIS standard, 0.6% Si, 0.7% Fe, 0.05-0.20% Cu, 1.0 To 1.5% Mn, 0.1% Zn). Then, the firing test was repeated three times for each sample. The firing temperature in the first firing test was 600 ° C. The firing temperature in the second firing test was 600 ° C. The firing temperature in the third firing test was 500 ° C. Moreover, the resistance value of each sample after each firing experiment was measured, and the measurement results are shown in Table 1. 8 is a graph in which the resistance values of the electrodes in Example 1 and Example 2 in Table 1 are plotted. FIG. 9 is a graph in which the resistance values of the electrodes in Comparative Examples 1 to 3 in Table 1 are plotted. is there.

  From Table 1 and FIG. 8, in Example 1 and Example 2, the resistance value decreased to about 1/2 by performing the firing experiment once, and the samples after the second and subsequent firing experiments have their resistance values. Changed little. Moreover, it can be seen by comparing Example 1 and Example 2 that the resistance value decreases as the electrode film thickness increases. On the other hand, from Table 1 and FIG. 9, in Comparative Examples 1 to 3, it was observed that the resistance value continued to change by repeating the firing experiment. Further, comparing each of Comparative Examples 1 to 3, it can be seen that as the Cr layer increases, the resistance value increases and the amount of change in the resistance value increases remarkably.

  In manufacturing the PDP, the rear substrate 1 is subjected to a heat treatment such as a post-baking process, a partition forming process, and a phosphor layer forming process. In the configuration in which the address electrode 2 is formed of a single layer of a metal material mainly composed of Al as in the present embodiment, the resistance value of the electrode is reduced to about half by one heat treatment, and the resistance value is reduced in the subsequent heat treatment. It does not change. From this, it can be said that an address electrode having a desired resistance value can be obtained by controlling the film thickness of the metal material layer, and the device design of the PDP becomes easy. On the other hand, if the address electrode has a Cr / Al two-layer structure, the resistance value of the electrode after completion of the PDP differs depending on the mixing ratio of the Cr layer and the Al layer, and it is considered that control becomes difficult.

[Experimental example 2]
Next, Experimental Example 2 for confirming the effect of this embodiment will be described. In Experimental Example 2, six types of samples in which an Al-based metal thin film was formed on a glass substrate by a sputtering method using six types of metal materials having the compositions shown in Table 2 as a film formation source were produced. And after performing the baking test with respect to each sample, the corrosion resistance of each sample was examined. Table 2 shows the test results together with the composition of each sample, where the samples having good corrosion resistance are indicated by ◯ and the samples having poor corrosion resistance are indicated by ×. The sputtering conditions were a substrate temperature of 100 ° C.

  From Table 2, it can be seen that Mg, Mn, Ti, Si, and Zn are suitable as additive metals for the Al alloy. Moreover, since it is inferior to corrosion resistance when Cu component increases, it turns out that Cu is not suitable as an additive metal of Al alloy. Examples of the additive metal that improves the corrosion resistance of the Al alloy include Mo, Ta, Ni, Nd, Pd, Pt, and Au in addition to Mg, Mn, Ti, Si, and Zn. In addition to Cu, Fe can be cited as an additive metal that lowers the corrosion resistance of the Al alloy. Accordingly, in the present embodiment, those suitable as metals added to the metal material mainly composed of Al used for the address electrode 2 are Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, and Pd. , Pt, Au, Zn.

[Experimental Example 3]
Next, Experimental Example 3 for confirming the effect of the present embodiment will be described. In Experimental Example 3, various samples were generated by changing the substrate temperature from an unheated state to 100 ° C. and forming an Al-based metal material thin film mainly containing four types of Al on a glass substrate by a sputtering method. And about each sample, the peel test was implemented in order to verify the adhesiveness of an Al type metal material thin film and a glass substrate. For the peel test, a tape for peel test (631S manufactured by Teraoka Seisakusho Co., Ltd.) having a tape width of 10 mm and a peel strength of 1 to 2 kg / cm was used. Then, a tape was affixed to the Al-based metal material thin film of each sample and left for 30 minutes to be sufficiently adhered, and then the tape was peeled off. The peel angle was 90 degrees and the peel speed was 5 mm / sec. Table 3 shows the test results for each sample. In Table 3, when the Al-based metal material thin film was peeled off from the glass substrate by the tape, x was indicated, and when the Al-based metal material thin film was in close contact with the glass substrate, it was indicated as ◯. In Table 3, Al3003 and Al5052 are Al alloys defined by JIS standards, and their material components are shown in Table 2.

  From the results shown in Example 7 to Example 9 in Table 3, if the substrate temperature is 60 ° C. or higher and 100 ° C. or lower, the adhesion between the Al-based metal material thin film and the glass substrate is sufficiently secured in any sample. I understand. On the other hand, the results shown in Comparative Example 6 and Comparative Example 7 in Table 3 indicate that when the substrate temperature is lower than 60 ° C., the adhesion between the Al-based metal material thin film and the glass substrate is insufficient. Thus, in this embodiment, it can be said that it is desirable to form the address electrode material layer 2A in a state where the back substrate 1 is heat-treated in a temperature range of 60 ° C. or higher and 100 ° C. or lower.

[Modification of Embodiment]
In addition, this invention is not limited to embodiment mentioned above, The deformation | transformation shown below is included in the range which can achieve the objective of this invention.

  That is, as described above, in the present embodiment, the configuration in which the plurality of address electrodes 2 are formed on the back substrate 1 of the plasma display panel as a display panel is exemplified, but the present invention is not limited to this, for example, FED, LED display panel Any configuration can be applied as long as the electrode pattern is formed on the glass substrate, such as an organic EL or a liquid crystal display. Moreover, you may apply to the structure which forms the bus electrode in the front substrate of a plasma display panel.

  In the said embodiment, although the back substrate 1 was made into the rectangular planar glass plate, it is not restricted to this, For example, a square planar glass plate, the glass substrate of the state which bent the rectangular planar glass plate, etc. The present invention can be applied to glass substrates having various shapes.

  Moreover, although the back substrate 1 is configured to include the grid-like partition walls 4, the configuration is not limited thereto, and may be configured to include stripe-shaped partition walls. In this case, as the back substrate 1 is provided with stripe-shaped partition walls, the front substrate 1A also needs to be configured to correspond to the shape of the partition walls.

  Furthermore, although the plurality of address electrodes 2 formed on the back substrate 1 are a plurality of strip patterns, the present invention is not limited to this, and the address electrodes 2 may have various pattern shapes such as a plurality of rectangular waves or sinusoidal shapes. can do. The plurality of strip-like patterns of the address electrodes 2 are formed by photolithography. However, the present invention is not limited to this, and may be formed by using, for example, a photolithography lift-off method.

  The film formation preparation chamber 20 of the film formation apparatus 10 is configured to be provided with a vacuum pump. However, the present invention is not limited to this, and the film formation preparation chamber 20 is not provided with a vacuum pump. It is good also as a structure which provides a pump. In addition, the heater 21 in the film formation preparation chamber is configured to heat the rear substrate 1 provided on the upper part of the film formation preparation chamber 20 from the upper side, and is not limited thereto. The heater 21 may be provided at any position as long as the temperature can be heated to the above temperature, and a plurality of heaters 21 may be provided.

  Further, in the film forming process on the rear substrate 1 by the film forming apparatus 10, the heating process for the rear substrate 1 may be performed only in the film forming preparation chamber 20, and the film forming unit 30 may not be subjected to the heat processing. In the case of such a configuration, a configuration in which the rear substrate 1 heated in the film formation preparation chamber 20 is kept isothermally in the film formation unit 30 is required.

[Effects of Embodiment]
As described above, in the above embodiment, when the address electrode 2 is formed on the rear substrate 1 of the PDP, the surface temperature of the rear substrate 1 is maintained at 60 ° C. or higher and an appropriate method is used. An address electrode material layer 2 </ b> A mainly composed of Al, which is a material of the address electrode 2, is formed on the back substrate 1. For this reason, even if the address electrode 2 is formed as a single layer structure of a metal material containing Al as a main component, good adhesion between the address electrode 2 and the back substrate 1 can be secured. Further, since the address electrode 2 has a single-layer structure of a metal material mainly composed of Al, the number of steps in the photolithography process is reduced, and the conventional three-layer structure such as Cr / Al / Cr and Cr / Cu / Cr is used. Manufacturing efficiency can be greatly improved as compared with the case where the address electrode is formed. Further, since Cr is not used for the address electrode 2, the waste liquid after the etching process in the photolithography process does not contain hexavalent chromium, and the problem that the conventional waste liquid process is troublesome can be solved.

It is the disassembled perspective view which showed the conventional PDP (plasma display panel). It is sectional drawing which showed the back substrate at the time of forming an address electrode on a back substrate by the conventional method. The process of forming the address electrode on the conventional back substrate is shown, (A) is a cross-sectional view of the back substrate after the first step, and (B) is a cross-sectional view of the back substrate after the second step. (C) is sectional drawing of the back substrate after a 3rd process. 8A and 8B show a process of forming an address electrode on a conventional back substrate, wherein FIG. 4D is a cross-sectional view of the back substrate after the fourth step, and FIG. (F) is a cross-sectional view of the back substrate after the sixth step, and (G) is a cross-sectional view of the back substrate after the seventh step. It is the perspective view which showed the back substrate of the plasma display panel in this Embodiment. It is a schematic block diagram of the film-forming apparatus in the said embodiment. FIG. 6 shows a process of forming address electrodes on the back substrate in the embodiment, wherein (A) is a cross-sectional view of the back substrate after the first step, and (B) is a back substrate after the second step. It is sectional drawing, (C) is sectional drawing of the back substrate after a 3rd process, (D) is sectional drawing of the back substrate after a 4th process, (E) is after a 5th process. FIG. 10F is a cross-sectional view of the back substrate of FIG. It is the graph which plotted the resistance value of the electrode in Example 1 and Example 2 of Table 1. FIG. 4 is a graph in which resistance values of electrodes in Comparative Examples 1 to 3 in Table 1 are plotted.

Explanation of symbols

1 Rear substrate (at least one of a pair of substrates disposed opposite to each other with a light emitting region in between)
2 Address electrodes (multiple electrode patterns)
2A Address electrode material layer (metal material layer mainly composed of Al)
10 Deposition device 21 Heater (heating unit)
30 Deposition unit

Claims (9)

A method of manufacturing a display panel by forming a plurality of electrode patterns on at least one of a pair of glass substrates disposed opposite to each other with a light emitting region interposed therebetween,
Holding the surface temperature of the one glass substrate at 60 ° C. or higher,
A method of manufacturing a display panel, comprising: forming a metal material layer mainly composed of Al as a material of the electrode on the glass substrate. A manufacturing method of a display panel according to claim 1,
A method of manufacturing a display panel, wherein when the metal material layer is formed on the one glass substrate, the surface temperature of the one glass substrate is maintained at 100 ° C. or lower. A method of manufacturing a display panel according to claim 1 or 2,
The method for manufacturing a display panel, wherein the metal material layer is formed by vacuum film formation by a sputtering method or a vacuum evaporation method. A method of manufacturing a display panel according to any one of claims 1 to 3,
The method for manufacturing a display panel, wherein the electrode pattern is formed by a printing method or a lift-off method. A method for manufacturing a display panel according to any one of claims 1 to 4,
A method for manufacturing a display panel, wherein an additive amount of the additive added to the metal material layer containing Al as a main component is set to 20% by weight or less. A method for manufacturing a display panel according to any one of claims 1 to 5,
The additive includes at least one of Mg, Mn, Ti, Mo, Ta, Si, Ni, Nd, Pd, Pt, Au, and Zn. An apparatus for manufacturing a display panel by forming a plurality of electrode patterns on at least one glass substrate among a pair of glass substrates arranged opposite to each other with a light emitting region interposed therebetween,
A heating unit that heat-treats the one glass substrate to 60 ° C. or higher;
A film forming unit that forms a metal material layer mainly composed of Al as a material of the electrode on the one glass substrate that has been heat-treated in the heating unit;
The said film-forming part forms the said metal material layer on said one glass substrate, keeping the surface temperature of said one glass substrate becoming 60 degreeC or more. The manufacturing apparatus of the display panel characterized by the above-mentioned. The display panel manufacturing apparatus according to claim 7,
The said film-forming part forms the said metal material layer on said one glass substrate by sputtering method or a vacuum evaporation method. The manufacturing apparatus of the display panel characterized by the above-mentioned.   A display panel manufactured by the method for manufacturing a display panel according to claim 1.

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