JP2006120932A - Forming method of through-wiring for substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a forming method of through-wiring for a substrate capable of surely forming the wiring extending from one surface of the substrate to the other surface thereof in a through-hole. <P>SOLUTION: A first resin layer 27 and a metal layer 40 are laminated and formed in this order on a semiconductor substrate 24. A first through-hole 44 is formed in the metal layer 40, and a second through-hole 45 and a non-through-hole 46 are formed to be in communication with the first through-hole 44 in the first resin layer 27 and the semiconductor substrate 24, respectively. When an electrically conductive resin material 62 is supplied to the first through-hole 44, the conductive resin material 62 does not extend over the surface of the metal layer 40 because the contact angle is large between the metal layer 40 and the conductive resin material 62, so that the first through-hole 44 can surely be blocked and the conductive resin material 62 can surely be injected into the non-through-hole 46 utilizing pressure difference. The through-wiring 21 is formed by curing the conductive resin material 62 and removing a part of the semiconductor substrate 24 from the other surface 36 side. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for forming a through wiring on a substrate.

  One of the factors that led to the rapid spread of mobile phones and portable information terminal devices is the dramatic reduction in size of these devices. In order to further reduce the size of these devices, it is necessary to reduce the size of the semiconductor components and increase the density of the semiconductor components.

  As a technique for dramatically improving the mounting density of semiconductor components, a semiconductor substrate on which a large scale integration circuit (Large Scale Integration: abbreviated LSI) including a semiconductor element and the like is formed is thinned. A three-dimensional system LSI technology in which a plurality of semiconductor substrates are stacked to constitute a semiconductor component has attracted attention. In order to realize this three-dimensional system LSI, it is necessary to be able to exchange electrical signals between spaced semiconductor substrates. Therefore, it is necessary to form a through wiring that penetrates in the thickness direction of the semiconductor substrate. The electrical signals can be exchanged between the separated semiconductor substrates through the through wiring of the semiconductor substrate sandwiched between the separated semiconductor substrates.

In the first conventional technique, the through wiring of the semiconductor substrate is formed as follows.
FIG. 8 is a cross-sectional view schematically showing a part of a semiconductor substrate in the process of forming a through wiring according to the first prior art. First, the semiconductor substrate 1 in which the through hole 4 is formed on the stage 2 which is kept horizontal is installed. At this time, the pressure of the atmosphere of the semiconductor substrate 1 is kept lower than the atmospheric pressure. Next, as shown in FIG. 8 (1), the conductive paste is formed so as to cover the peripheral hole 10 of the semiconductor substrate 1 facing the through hole 4 on one surface 6 in the thickness direction of the semiconductor substrate 1 and close the through hole 4. Material 3 is applied. Next, the pressure of the atmosphere of the semiconductor substrate 1 is returned to atmospheric pressure. At this time, the pressure in the closed space 7 formed by the inner peripheral surface 5 of the semiconductor substrate 1 facing the through hole 4, the stage 2, and the conductive paste material 3 is lower than the pressure outside the closed space 7. Due to this pressure difference, as shown in FIG. 8B, the conductive paste material 3 is filled into the through hole 4 with a differential pressure. Next, the conductive paste material 3 is cured by heating to form the through wiring 8 (see, for example, Patent Document 1).

  In the first conventional technique, after the conductive paste material 3 is filled into the through holes 4 using the differential pressure filling method, the excess conductive paste material 3 remains on the one surface 6 of the semiconductor substrate 1. When the conductive paste material 3 remaining on the one surface 6 of the semiconductor substrate 1 is cured by heating, an unnecessary flash 9 is formed on the one surface 6 of the semiconductor substrate 1. The flash 9 formed on the one surface 6 of the semiconductor substrate 1 is removed by the deburring process, but may remain without being completely removed. In this case, the flash 9 formed on the one surface 6 of the semiconductor substrate 1 may be electrically connected to the semiconductor element formed on the one surface portion 11 of the semiconductor substrate 1.

  In view of the above-described problem, in the second conventional technique, the through wiring of the semiconductor substrate is formed as follows.

  FIG. 9 is a cross-sectional view schematically showing a part of a semiconductor substrate in the process of forming a through wiring according to the second prior art. First, the resin layer 15 is formed on the one surface 13 of the semiconductor substrate 16. Next, a through hole 14 that penetrates the resin layer 15 in the thickness direction is formed in the resin layer 15. Next, the non-through holes 12 extending from one surface 13 in the thickness direction of the semiconductor substrate 16 toward the other surface 83 and communicating with the through holes 14 of the resin layer 15 are formed. Next, the pressure of the atmosphere of the semiconductor substrate 16 is kept lower than the atmospheric pressure. Next, as shown in FIG. 9 (1), a conductive paste is formed so as to cover the peripheral hole 18 of the resin layer 15 facing the through hole 14 on one surface 17 in the thickness direction of the resin layer 15 and close the through hole 14. Material 3 is applied. Next, the pressure of the atmosphere of the semiconductor substrate 16 is returned to atmospheric pressure.

  FIG. 9B is a cross-sectional view schematically showing a part of the semiconductor substrate 16, the resin layer 15, and the conductive paste material 3 when the pressure of the atmosphere of the semiconductor substrate 16 is returned to atmospheric pressure. is there. When the atmospheric pressure of the semiconductor substrate 16 is returned to atmospheric pressure, it is formed by the inner peripheral surface 19 of the resin layer 15 facing the through hole 14 and the inner peripheral surface 80 of the semiconductor substrate 16 desired by the non-through hole 12. The pressure in the closed space 81 is lower than the pressure outside the closed space 81. Due to this pressure difference, the conductive paste material 3 is filled in the non-through holes 12 with a differential pressure.

  FIG. 9 (3) is a cross-sectional view schematically showing a part of the semiconductor substrate 16 and the through wiring layer 82. Next, the filled conductive paste material 3 is heated and cured to form the through wiring layer 82. Next, the resin layer 15 is removed, a part of the semiconductor substrate 16 is removed from the other surface 83 side to expose the through wiring layer 82, and the semiconductor substrate 84 and the through wiring that penetrates the semiconductor substrate 84 in the thickness direction are exposed. Form. In the above method, unnecessary flash is not formed on one surface 85 of the semiconductor substrate 84.

JP 2003-257891 A

  In the second conventional technique, there is a case where the conductive paste material 3 cannot be filled in the non-through holes 12, and there is a possibility that the through wiring is not formed in the semiconductor substrate 84.

  FIG. 10 is a cross-sectional view schematically showing a part of a semiconductor substrate in the middle of forming a through wiring according to the second conventional technique. In a reduced pressure atmosphere lower than the atmospheric pressure, the conductive paste material 3 is covered so as to cover the peripheral edge 18 of the resin layer 15 facing the through hole 14 on one surface 17 in the thickness direction of the resin layer 15 and close the through hole 14. Even when applied, when the contact angle between one surface 17 of the resin layer 15 and the conductive paste material 3 is small, the conductive paste material 3 spreads on the one surface 17 in the thickness direction of the resin layer 15. Therefore, the through hole 14 may not be blocked by the conductive paste material 3. In this case, even if the pressure of the atmosphere of the semiconductor substrate 16 is returned to atmospheric pressure, the pressure of the gas in contact with the inner peripheral surface 80 of the semiconductor substrate 16 facing the non-through hole 12 and the pressure of the atmosphere of the semiconductor substrate 16 are different. Thus, the conductive paste material 3 cannot be filled into the non-through holes 12 with a differential pressure. When the conductive paste material 3 is heated and cured in a state where the conductive paste material 3 is not filled in the non-through holes 12, and the through wiring layer is formed, the resin layer 15 is removed, and a part of the semiconductor substrate 16 is replaced with another part. Even if it is removed from the surface 83 side to expose the through wiring layer, there is a possibility that the wiring penetrating in the thickness direction of the semiconductor substrate 84 may not be formed. When a through wiring is formed on a substrate, not limited to a semiconductor substrate, the same problem as described above may occur.

  When the contact angle between the resin layer 15 and the conductive paste material 3 is small, the through-hole 14 is covered with the peripheral edge 18 of the resin layer 15 facing the through-hole 14 on the one surface 17 in the thickness direction of the resin layer 15. Even if the conductive paste material 3 is applied so as to be closed, the conductive paste material 3 spreads on the one surface 17 of the resin layer 15. Therefore, even if the conductive paste material 3 is filled in the non-through holes 12 using the differential pressure filling method, an unnecessary flash is formed on the one surface 17 of the resin layer 15 when the conductive paste material 3 is heated and cured. Is done. When this flash is removed, there is a possibility that one surface 85 of the semiconductor substrate 84 may be damaged.

  Accordingly, an object of the present invention is to provide a method for forming a through-wiring of a substrate that can reliably form a wiring extending from one surface of the substrate to the other surface in the through-hole and can form the through-wiring without damaging the substrate. It is to be.

The present invention is a method for forming a through-wiring of a substrate, wherein the through-wiring is formed on the substrate using a conductive paste material,
A resin layer forming step of forming a resin layer formed of resin on one surface in the thickness direction of the substrate;
A metal layer forming step of forming a metal layer formed of metal on one surface in the thickness direction of the resin layer;
A first through hole forming step of forming a first through hole penetrating the metal layer in a thickness direction of the metal layer;
A second through hole forming step of forming a second through hole penetrating the resin layer in the thickness direction of the resin layer and communicating with the first through hole;
A non-through hole forming step for forming a non-through hole extending from one surface in the thickness direction of the substrate toward the other surface and communicating with the second through hole in the base material;
A closed space is formed by covering the first through hole with the conductive paste material so as to cover a peripheral portion of the metal layer facing the first through hole on one surface in the thickness direction of the metal layer. Process,
By increasing the pressure outside the closed space higher than the pressure in the closed space, the conductive paste material closing the first through hole in the closed space forming step is injected into the non-through hole. Paste material injection process,
A through-wiring layer forming step of curing the conductive paste material injected into the non-through holes and forming a through-wiring layer;
A part of the base material is removed from the other surface side to expose the through wiring layer, and includes a substrate and a through wiring forming step of forming a through wiring that penetrates the substrate in the thickness direction,
The metal layer is formed such that a contact angle between the metal layer and the conductive paste material in the closed space forming step is larger than a contact angle between the resin layer and the conductive paste material. This is a method for forming a through wiring of a substrate.

  According to the present invention, the metal layer is formed such that the contact angle between the metal layer and the conductive paste material in the closed space forming step is larger than the contact angle between the resin layer and the conductive paste material. . The conductive paste material is a mixture of a resin binder and conductive metal particles. When the conductive paste material is supplied so as to cover the peripheral edge of the metal layer facing the first through hole in one surface in the thickness direction of the metal layer and close the first through hole, the metal layer and the conductive paste material Therefore, the conductive paste material does not spread on one surface in the thickness direction of the metal layer. Since the supplied conductive paste material does not spread on one surface in the thickness direction of the metal layer, the first through hole of the metal layer can be reliably closed by the conductive paste material.

  In addition, since the supplied conductive paste material does not spread on one surface in the thickness direction of the metal layer, even if the conductive paste material is cured to form a through wiring layer, it is unnecessary on the one surface in the thickness direction of the metal layer. No burr is formed.

  Further, since the resin layer is interposed between the base material and the metal layer, the metal layer is not directly formed on one surface of the base material. When a metal layer is directly formed on one surface of the base material, there is a risk of damaging one surface of the base material when the metal layer is removed, but a resin layer is interposed between the base material and the metal layer. When removing the metal layer, the resin layer protects one surface of the substrate. Therefore, when removing the metal layer, one surface of the substrate is not damaged.

In the present invention, the substrate is formed of at least a semiconductor,
An insulating film forming step of covering an inner peripheral surface of the base material facing the non-through hole with an insulating film made of an electrically insulating material between the non-through hole forming step and the closed space forming step; It is characterized by.

According to the present invention, the substrate is formed of at least a semiconductor.
The inner peripheral surface of the base material facing the non-through hole is covered with an insulating film.

In the present invention, the insulating film forming step includes
An insulating paste material made of a resin material and having an electrical insulating property covers the peripheral edge of the metal layer facing the first through hole on one surface in the thickness direction of the metal layer, thereby closing the first through hole. A second closed space forming step for forming a second closed space;
By making the pressure outside the second closed space higher than the pressure in the second closed space, the insulating paste material that has closed the first through-hole in the second closed space forming step is used as the unsealed paste material. An inner peripheral surface covering step for injecting into the through hole and covering the inner peripheral surface of the base material facing the non-through hole with the insulating paste material,
An insulating paste material curing step of curing the insulating paste material covering the inner peripheral surface of the base material facing the non-through hole to form the insulating film,
The metal layer is formed such that a contact angle between the metal layer and the insulating paste material in the second closed space forming step is larger than a contact angle between the resin layer and the insulating paste material. It is characterized by that.

  According to the present invention, the metal layer is formed such that the contact angle between the metal layer and the insulating paste material in the second closed space forming step is larger than the contact angle between the resin layer and the insulating paste material. Is done. The insulating paste material is made of a resin having electrical insulation. When the insulating paste material is supplied so as to cover the peripheral edge of the metal layer facing the first through hole in one surface in the thickness direction of the metal layer and close the first through hole, the metal layer and the insulating paste material Therefore, the insulating paste material does not spread on one surface in the thickness direction of the metal layer. Since the supplied insulating paste material does not spread on one surface in the thickness direction of the metal layer, the first through hole of the metal layer can be reliably closed by the insulating paste material.

  In the closed space forming step, the present invention arranges a mask body in which a hole penetrating in the thickness direction is formed with one surface in the thickness direction of the metal layer facing the other surface in the thickness direction of the mask body, The conductive paste material is supplied from one surface in the thickness direction of the mask body to the first through hole through the hole of the mask body.

  According to the present invention, the conductive paste material is supplied from one surface in the thickness direction of the mask body to the first through hole of the metal layer through the hole of the mask body. Since the conductive paste material is supplied through the mask body, when a plurality of through holes are formed in the metal layer, the conductive paste material can be simultaneously supplied to the plurality of through holes.

In the closed space forming step, the present invention arranges a mask body in which a hole penetrating in the thickness direction is formed with one surface in the thickness direction of the metal layer facing the other surface in the thickness direction of the mask body, Supplying the conductive paste material from one surface in the thickness direction of the mask body to the first through hole through the hole of the mask body;
In the second closed space forming step, one surface in the thickness direction of the metal layer and the other surface in the thickness direction of the mask body are arranged to face each other, and the insulating paste material is disposed from one surface in the thickness direction of the mask body. The first through hole is supplied through a hole of the mask body.

  According to the present invention, the conductive paste material and the insulating paste material are supplied from one surface in the thickness direction of the mask body to the first through hole of the metal layer through the hole of the mask body. Since the conductive paste material and the insulating paste material are supplied through the mask body, when a plurality of through holes are formed in the metal layer, the conductive paste material and the insulating paste material are simultaneously applied to the plurality of through holes. Can be supplied.

  The present invention is characterized in that, in the closed space forming step, the conductive paste material is supplied to the first through hole using a dispenser.

  According to the present invention, the conductive paste material is supplied to the first through hole of the metal layer using a dispenser. Since the dispenser is used, the conductive paste material can be accurately supplied to a predetermined position. Moreover, it becomes easy to adjust the supply amount of the conductive paste material.

In the closed space forming step, the present invention supplies the conductive paste material to the first through hole using a dispenser,
In the second closed space forming step, the insulating paste material is supplied to the first through hole using a dispenser.

  According to the present invention, the conductive paste material and the insulating paste material are supplied to the first through hole of the metal layer using a dispenser. Since the dispenser is used, the conductive paste material and the insulating paste material can be accurately supplied to a predetermined position. Moreover, it becomes easy to adjust the supply amount of the conductive paste material and the insulating paste material.

In the present invention, the first through hole forming step includes
A second resin layer through-hole forming step for forming a second resin layer formed of a resin and having a hole penetrating in the thickness direction on one surface in the thickness direction of the metal layer;
A metal layer through-hole forming step of forming in the metal layer the first through-hole penetrating in the thickness direction of the metal layer and communicating with the hole of the second resin layer,
In the second through hole forming step, the second resin layer is peeled off by a peeling solution, and the resin layer is penetrated by the peeling solution in the thickness direction of the resin layer and communicated with the first through hole. A second through hole is formed.

  According to the present invention, the resin layer and the second resin layer are formed from a material soluble in the same stripping solution. Therefore, formation of the 2nd through-hole of a resin layer and exfoliation of the 2nd resin layer can be performed by one process.

The present invention is characterized in that the second resin layer is formed of a positive resist.
According to the present invention, the second resin layer is formed of a positive resist. Compared with the case where the second resin layer is formed using a negative resist, when the second resin layer is formed using a positive resist, the resolution becomes higher when developed. Therefore, it is possible to accurately form a hole having a predetermined shape at a predetermined position of the second resin layer.

The present invention is characterized in that the resin layer is formed of a positive resist.
According to the present invention, the resin layer and the second resin layer are formed of a positive resist and are soluble in the same stripping solution. Therefore, formation of the 2nd through-hole of a resin layer and exfoliation of the 2nd resin layer can be performed by one process.

In the present invention, the resin layer forming step includes
A photosensitive resin layer forming step of forming a photosensitive resin layer by applying a photosensitive resin on one surface in the thickness direction of the substrate;
A photosensitive resin layer exposure step of exposing the entire photosensitive resin layer from one surface side in the thickness direction of the photosensitive resin layer;
A photosensitive resin layer curing step of curing the exposed photosensitive resin layer to form the resin layer.

  According to the present invention, since the resin layer is formed by exposing the entire photosensitive resin and then curing, the resin layer is easily dissolved in the stripping solution. Therefore, when the formation of the second through hole of the resin layer and the peeling of the second resin layer are performed in the same process, the second through hole of the resin layer is easily formed. In addition, since the metal layer is formed on one surface in the thickness direction of the resin layer after the resin layer is cured, the relative position between the metal layer and the substrate is fixed.

The present invention is a method for forming a through-wiring of a substrate, wherein the through-wiring is formed on the substrate using a conductive paste material,
A paste material supply layer forming step of forming a paste material supply layer in which the conductive paste material is supplied on one surface in the thickness direction of the substrate;
A through-hole forming step for forming a through-hole penetrating in the thickness direction of the paste material supply layer in the paste material supply layer;
A non-through hole forming step for forming a non-through hole extending from one surface in the thickness direction of the substrate toward the other surface and communicating with the through hole in the base material;
A closed space forming step of forming a closed space by covering the peripheral edge portion of the paste material supply layer facing the through hole in the thickness direction surface of the paste material supply layer with the conductive paste material, thereby closing the through hole. When,
Paste material injecting step of injecting the conductive paste material, which has closed the through hole in the closed space forming step, into the non-through hole by making the pressure outside the closed space higher than the pressure in the closed space When,
A through-wiring layer forming step of curing the conductive paste material injected into the non-through holes and forming a through-wiring layer;
A part of the base material is removed from the other surface side to expose the through wiring layer, and includes a substrate and a through wiring forming step of forming a through wiring that penetrates the substrate in the thickness direction,
The paste material supply layer is formed so that a contact angle between the paste material supply layer and the conductive paste material in the closed space forming step is selected to be 60 ° or more and less than 80 °. This is a wiring formation method.

  According to the present invention, the paste material supply layer is formed such that the contact angle between the paste material supply layer and the conductive paste material in the closed space forming step is selected to be 60 ° or more and less than 80 °. When the conductive paste material is supplied so as to cover the peripheral edge of the paste material supply layer facing the through hole in one surface in the thickness direction of the paste material supply layer and close the through hole, the conductive paste material is electrically conductive with the paste material supply layer. Since the contact angle with the paste material is large, the conductive paste material does not spread on one surface in the thickness direction of the paste material supply layer. Since the supplied conductive paste material does not spread on one surface in the thickness direction of the paste material supply layer, the conductive paste material can reliably block the through hole of the paste material supply layer.

  In addition, since the supplied conductive paste material does not spread on one surface in the thickness direction of the paste material supply layer, even if the conductive paste material is cured to form a through-wiring layer, it remains on one surface in the thickness direction of the metal layer. Unnecessary flashes are not formed.

  According to the present invention, the first through hole of the metal layer can be reliably plugged with the conductive paste material, so that the conductive paste material is reliably injected into the non-through hole of the base material by utilizing the pressure difference. can do. After the injected paste material is cured to form a through wiring layer, a part of the base material is removed from the other surface side, so that the wiring extending from one surface of the substrate to the other surface is surely inserted into the through hole of the substrate. Can be formed.

  Moreover, an unnecessary flash is not formed on the surface of the metal layer in the thickness direction. If an unnecessary flash is formed on one surface in the thickness direction of the metal layer, it is necessary to perform flash removal, and there is a possibility that one surface in the thickness direction of the substrate may be damaged when performing flash removal. In the present invention, since unnecessary flash is not formed on the surface in the thickness direction of the metal layer, it is not necessary to perform deburring and the surface in the thickness direction of the substrate is not damaged.

  Further, since the resin layer is interposed between the base material and the metal layer, the metal layer is not directly formed on one surface of the base material. When a metal layer is directly formed on one surface of the base material, there is a risk of damaging one surface of the base material when the metal layer is removed, but a resin layer is interposed between the base material and the metal layer. When removing the metal layer, the resin layer protects one surface of the substrate. Therefore, when removing the metal layer, one surface of the substrate is not damaged.

  Moreover, according to this invention, the 1st through-hole of a metal layer can be reliably plugged up with an electrically conductive paste material. It is difficult to fill the non-through holes of the semiconductor substrate with a high aspect ratio with the paste material, but the first through holes of the metal layer can be reliably closed by the conductive paste material, so use the pressure difference Thus, the conductive paste material can be reliably injected into the non-through holes of the semiconductor substrate having a high aspect ratio. By curing the injected conductive paste material to form a through wiring layer and removing a part of the semiconductor substrate from the other surface side, the wiring extending from one surface of the semiconductor substrate to the other surface is passed through the semiconductor substrate through hole. Can be reliably formed.

  Moreover, since the inner peripheral surface of the base material facing the non-through hole is covered with the insulating film, the through wiring layer and the base material are not in contact with each other. Therefore, the through wiring and the substrate are separated by the insulating film. Therefore, a through wiring that is electrically insulated from the substrate can be formed.

  In addition, according to the present invention, the first through hole of the metal layer can be reliably closed by the insulating paste material, so that the insulating paste material can be reliably put into the non-through hole of the substrate by utilizing the pressure difference. The inner peripheral surface of the base material facing the non-through hole of the base material can be reliably covered with the insulating paste material. Forming an insulating film that reliably covers the inner peripheral surface of the base material facing the non-through hole of the base material by curing the insulating paste material that covers the inner peripheral surface of the base material facing the non-through hole of the base material Can do. Therefore, when the conductive paste material is injected into the non-through hole, the inner peripheral surface of the base material facing the non-through hole of the base material does not contact the conductive paste material. When the through-wiring that penetrates the substrate and the substrate in the thickness direction is formed by curing the injected conductive paste material to form a through-wiring layer and removing a part of the base material from the other surface side, the substrate Thus, a through wiring that is more reliably electrically insulated can be formed on the substrate.

  Moreover, according to this invention, an electroconductive paste material can be simultaneously supplied to the several through-hole of a metal layer. Therefore, the time for supplying the conductive paste material can be shortened, and the through wiring of the substrate can be efficiently formed.

  According to the present invention, the conductive paste material and the insulating paste material can be simultaneously supplied to the plurality of through holes of the metal layer. Therefore, the time for supplying the conductive paste material and the insulating paste material can be shortened, and the through wiring of the substrate can be efficiently formed.

  In addition, according to the present invention, the conductive paste material can be accurately supplied to a predetermined position and the supply amount can be easily adjusted, so that the first through hole of the metal layer can be more reliably formed by the conductive paste material. Can be closed. Therefore, it is possible to reliably inject the conductive paste material through the non-through holes of the base material by utilizing the pressure difference. By curing the injected conductive paste material to form a through wiring layer, and removing a part of the base material from the other surface side, the wiring extending from one surface of the substrate to the other surface is transferred to the through hole of the substrate. It can form more reliably.

  Further, according to the present invention, the conductive paste material and the insulating paste material can be accurately supplied to a predetermined position, and the supply amount thereof can be easily adjusted. It can be more reliably blocked by the material and the insulating paste material. Therefore, it is possible to reliably inject the paste material through the non-through holes of the base material by utilizing the pressure difference. The injected insulating paste material can be cured to form an insulating film that reliably covers the inner peripheral surface of the substrate facing the non-through hole. Also, the injected conductive paste material is cured to form a through wiring layer, and a part of the base material is removed from the other surface side, so that it is more reliably electrically insulated from the substrate, and the substrate The wiring extending from one surface to the other surface can be reliably formed by the through hole of the substrate.

  In addition, according to the present invention, since the formation of the second through hole of the resin layer and the peeling of the second resin layer can be performed in one process, the process of forming the through wiring on the substrate can be facilitated.

  Further, according to the present invention, since the second resin layer is formed of a positive resist, it is possible to accurately form a hole having a predetermined shape at a predetermined position of the second resin layer. The first through hole of the metal layer is formed in communication with the hole of the second resin layer through the hole of the second resin layer. The second through hole of the resin layer is formed in communication with the first through hole via the first through hole of the metal layer. The non-through hole of the substrate is formed in communication with the second through hole of the resin layer via the second through hole of the resin layer. Therefore, the position and shape of the non-through hole of the base material depend on the position and shape of the hole of the second resin layer. By filling the non-through holes with conductive paste material, curing the filled conductive paste material to form a through wiring layer, and removing a part of the substrate from the other surface side, the through wiring is formed. The Therefore, the position and shape of the through wiring are determined by the position and shape of the non-through hole. Therefore, by forming the hole having the predetermined shape with high accuracy at the predetermined position of the second resin layer, the through wiring with the predetermined shape can be formed with high accuracy at the predetermined position of the substrate.

  According to the invention, since the resin layer and the second resin layer are formed of a positive resist and are soluble in the same stripping solution, the formation of the second through hole of the resin layer and the peeling of the second resin layer Can be performed in one step. Therefore, the process of forming the through wiring on the substrate can be facilitated.

  Further, according to the present invention, the resin layer is formed by exposing the entire photosensitive resin and then curing it, so that the resin layer is easily dissolved in a stripping solution for stripping the second resin layer. Therefore, when the formation of the second through hole of the resin layer and the peeling of the second resin layer are performed in one process, the second through hole of the resin layer can be easily formed by the peeling solution. In addition, since the metal layer is formed on one surface in the thickness direction of the resin layer after the resin layer is cured, the relative position between the metal layer and the substrate is fixed. The non-through hole of the substrate is formed through the second through hole of the resin layer and the first through hole of the metal layer. Therefore, since the relative position between the metal layer and the substrate is fixed, if a hole with a predetermined shape is formed at a predetermined position in the metal layer, the non-through hole with a predetermined shape is accurately placed at a predetermined position on the base material. Can be well formed. The through wiring is formed by filling a non-through hole with a conductive paste material, heat-curing the filled conductive paste material to form a through wiring layer, and removing a part of the substrate from the other surface side. The Therefore, the position and shape of the through wiring are determined by the position and shape of the non-through hole. Since the relative position of the metal layer and the substrate is fixed, the through hole of the predetermined shape is accurately placed at the predetermined position of the substrate by accurately forming the hole of the predetermined shape at the predetermined position of the metal layer. It can be formed well.

  Further, according to the present invention, since the through hole of the paste material supply layer can be reliably closed by the conductive paste material, the conductive paste material can be reliably attached to the non-through hole of the base material by utilizing the pressure difference. Can be injected. After the injected conductive paste material is cured to form a through wiring layer, a part of the base material is removed from the other surface side so that the wiring extending from one surface of the substrate to the other surface can be transferred to the through hole of the substrate. It can be reliably formed.

  Moreover, an unnecessary flash is not formed on one surface in the thickness direction of the paste material supply layer. When an unnecessary flash is formed on one surface in the thickness direction of the paste material supply layer, it is necessary to perform flash removal, which may damage the surface in the thickness direction of the substrate. In the present invention, unnecessary flash is not formed on one surface in the thickness direction of the paste material supply layer, so that it is not necessary to perform deburring and the one surface in the thickness direction of the substrate is not damaged.

FIG. 1 is a flowchart showing a method for forming a through wiring of a substrate according to an embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing a part of the semiconductor substrate 20 on which the through wiring 21 is formed by the procedure shown in the flowchart of FIG. 3 to 6 are cross-sectional views schematically showing a part of the semiconductor substrate 20 in the process of forming the through wiring 21.
When the formation process of the through wiring 21 is started, the process proceeds from step S0 to step S1.

  FIG. 3A is a cross-sectional view schematically showing a part of the semiconductor substrate 24 after step S1. The semiconductor substrate 24 includes a semiconductor substrate body 25, a connection terminal portion 22, and a protective film 26. The semiconductor base body 25 is made of, for example, single crystal silicon (Si) or gallium arsenide (GaAs). The thickness of the semiconductor substrate body 25 is selected as the first thickness T1. The first thickness T1 is selected from 625 μm to 725 μm, for example.

  An oxide film is formed on one surface portion 30 in the thickness direction of the semiconductor base body 25. On one surface portion 30 in the thickness direction of the semiconductor base body 25, a large scale integrated circuit (abbreviated as LSI) including a semiconductor element is formed. The thickness direction of the semiconductor substrate 24 is defined as a first direction Z. The connection terminal portion 22 is made of a metal such as aluminum (Al) and gold (Au). The connection terminal portion 22 is formed on the one surface portion 30 in the first direction Z of the semiconductor base body 25. On one surface portion 30 of the semiconductor base body 25, wiring for electrically connecting the connection terminal portion 22 and the semiconductor element is formed. The protective film 26 is formed on the remaining surface of the semiconductor base body 25 in the first direction Z one surface 31 excluding a portion in contact with the connection terminal portion 22. The protective film 26 protects the surface of the semiconductor element. The protective film 26 is made of, for example, silicon nitride (SiN).

  In step S <b> 1, a substantially right cylindrical terminal portion through-hole 23 that penetrates in the first direction Z is formed in the connection terminal portion 22 by photolithography. Next, in the oxide film formed on the one surface portion 30 of the semiconductor base body 25, a portion exposed to the terminal portion through hole 23 is removed by photolithography. The first direction Z-one surface 32 of the semiconductor substrate 24 is the remaining surface of the first direction Z-one surface 31 of the semiconductor substrate body 25 except for the portion in contact with the protective film 26 or the connection terminal portion 22, and the protective film. 26, and a first direction Z-one surface 28 of the connection terminal portion 22. In the embodiment of the present invention, the term “substantially right circular cylinder” includes a right circular cylinder.

  When step S1 ends, the process proceeds to step S2. In step S <b> 2, a positive photosensitive resin material is applied on the first direction Z one surface 32 of the semiconductor substrate 24 by, for example, a spin coating method to cover the first direction Z one surface 32 of the semiconductor substrate 24. A photosensitive resin layer is formed. The positive photosensitive resin material is composed mainly of, for example, a novolac type epoxy resin. The photosensitive resin layer forming step corresponds to step S2.

  When step S2 ends, the process proceeds to step S3. In step S3, pre-cure is performed on the first photosensitive resin layer. The first photosensitive resin layer is semi-cured by placing the semiconductor substrate 24 coated with the positive photosensitive resin material in an atmosphere of 90 ° C. to 110 ° C. for 1 minute to 5 minutes, for example. The process performed in step S3 is referred to as a first precure.

When step S3 ends, the process proceeds to step S4. In step S4, the entire first photosensitive resin layer is exposed from one surface side in the first direction Z of the first photosensitive resin layer. The photosensitive resin layer exposure step corresponds to step S4.
When step S4 ends, the process proceeds to step S5.

FIG. 3B is a cross-sectional view schematically showing a part of the semiconductor substrate 24 and the first resin layer 27 after step S5. In step S5, the first photosensitive resin layer is post-cured to form the first resin layer 27. The first photosensitive resin layer is cured, for example, by placing it in an atmosphere of 120 ° C. to 150 ° C. for 1 minute to 5 minutes to form the first resin layer 27 in which the thickness in the first direction Z becomes the second thickness T2. To do. The second thickness T2 is selected from 5 μm to 10 μm, for example. The photosensitive resin layer curing step corresponds to step S5.
When step S5 ends, the process proceeds to step S6.

  FIG. 3 (3) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 after the end of step S <b> 6. In step S6, first, the metal layer 40 having the third thickness T3 is formed on the first direction Z surface 33 of the first resin layer 27 by, for example, sputtering or electroless plating. The metal layer 40 is made of, for example, gold (Au) or nickel (Ni). The metal layer 40 is preferably made of Au. When the metal layer 40 is made of Au, the third thickness T3 is selected from 0.05 μm to 0.5 μm, for example. The metal layer forming process corresponds to step S6.

When step S6 ends, the process proceeds to step S7. In step S <b> 7, a positive photosensitive resin material is applied onto the first direction Z one surface 34 of the metal layer 40 by, for example, a spin coating method, and the second photosensitivity covering the first direction Z one surface 34 of the metal layer 40. A resin layer 41 is formed. The positive photosensitive resin material is composed mainly of, for example, a novolac type epoxy resin.
When step S7 ends, the process proceeds to step S8.

  FIG. 3 (4) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the second photosensitive resin layer 41 after step S8. In step S8, the second photosensitive resin layer 41 is pre-cured. The second photosensitive resin layer 41 is semi-cured by placing the semiconductor substrate 24 coated with the positive photosensitive resin material in an atmosphere of 90 ° C. to 110 ° C. for 1 minute to 5 minutes, for example. The process performed in step S8 is referred to as a second precure.

  When step S8 ends, the process proceeds to step S9. In step S <b> 9, a region of the second photosensitive resin layer 41 in which the terminal portion through hole 23 is formed as viewed from one side in the first direction Z is defined as one surface in the first direction Z of the second photosensitive resin layer 41. Exposure from the 35 side.

When step S9 ends, the process proceeds to step S10. In step S <b> 10, the second photosensitive resin layer 41 is developed to form a resist through hole 42. When the second photosensitive resin layer 41 is developed with the developer, the exposed portion of the second photosensitive resin layer 41 in step S9 is removed and penetrates the second photosensitive resin layer 41 in the first direction Z. A resist through hole 42 having a substantially right cylindrical shape is formed.
When step S10 ends, the process proceeds to step S11.

FIG. 4A is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the second resin layer 43 after step S11. In step S11, the second photosensitive resin layer 41 is cured. The second photosensitive resin layer 41 is post-cured, for example, by placing it in an atmosphere of 120 ° C. to 150 ° C. for 1 minute to 5 minutes, so that the thickness in the first direction Z becomes the fourth thickness T4. Form. The fourth thickness T4 is selected from 1 μm to 2 μm, for example. A 2nd resin layer through-hole formation process respond | corresponds to step S7-step S11.
When step S11 ends, the process proceeds to step S12.

FIG. 4B is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the second resin layer 43 after step S12 is completed. In step S <b> 12, the first through hole 44 is formed in the metal layer 40. The semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the second resin layer 43 are immersed in, for example, an etching solution maintained at 80 to 110 ° C. for 5 to 15 minutes. The etching solution passes through the resist through-hole 42 and comes into contact with the remaining surface of the metal layer 40 in the first direction Z one surface 34 except for the portion in contact with the second resin layer 43. A portion of the metal layer 40 that is in contact with the etching solution is removed, and the first through hole 44 having a substantially right circular cylindrical shape penetrating in the first direction Z is formed in the metal layer 40. Since the first through hole 44 is formed via the resist through hole 42, it communicates with the resist through hole 42. The second inner peripheral surface 58 of the metal layer 40 facing the first through hole 44 and the first inner peripheral surface 59 of the second resin layer 43 facing the resist through hole 42 are continuous. The metal layer through-hole forming step corresponds to step S12.
When step S12 ends, the process proceeds to step S13.

  FIG. 4 (3) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 after the end of step S <b> 13. In step S <b> 13, the second resin layer 43 is peeled off and the second through hole 45 is formed in the first resin layer 27. The semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the second resin layer 43 are immersed in a stripping solution maintained at 80 ° C. to 110 ° C. for 5 minutes to 15 minutes, for example. The second resin layer 43 is removed with a stripping solution. In addition, the first resin layer 27 is formed by curing the same positive photosensitive resin as that of the second resin layer 43 after exposing the entire surface, and thus is soluble in a stripping solution for stripping the second resin layer 43. The stripping solution for stripping the second resin layer 43 passes through the first through-hole 44 and contacts the remaining surface of the first surface Z one surface 33 of the first resin layer 27 excluding the portion in contact with the metal layer 40. . Therefore, a portion of the first resin layer 27 that is in contact with the stripping solution is removed, and the second through hole 45 having a substantially right circular cylindrical shape penetrating in the first direction Z is formed in the first resin layer 27. Since the second through hole 45 is formed via the first through hole 44, the second through hole 45 communicates with the first through hole 44. The third inner peripheral surface 57 and the second inner peripheral surface 58 of the first resin layer 27 facing the second through hole 45 are continuous. The second through hole forming step corresponds to step S13.

Since the first resin layer 27 and the second resin layer 43 are soluble in the same stripping solution, the stripping of the second resin layer 43 and the formation of the second through holes 45 can be performed in one step. Therefore, the through wiring formation process can be facilitated.
When step S13 ends, the process proceeds to step S14.

  FIG. 5A is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 after the end of step S14. In step S14, the non-through hole 46 is formed in the semiconductor substrate 24 by, for example, a dry etching method. Of the first surface Z one surface 32 of the semiconductor substrate 24, the portion in contact with the first resin layer 27 is protected from the etching gas by the first resin layer 27 and is not etched. Therefore, the semiconductor substrate 24 is etched from the remaining surface of the first surface 32 of the semiconductor substrate 24 in the first direction Z except for the portion in contact with the first resin layer 27. A non-through hole 46 extending from the one surface 32 in the direction Z toward the other surface 36 is formed. Since the non-through hole 46 is formed via the first through hole 44 and the second through hole 45, it communicates with the first through hole 44 and the second through hole 45. The fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46 is continuous with the second inner peripheral surface 58 and the third inner peripheral surface 57. The non-through hole forming step corresponds to step S14.

As a specific example of dry etching, an etching apparatus using inductive coupled plasma (abbreviation ICP) is used, and reactive etching (Reactive Ion) is used.
When the non-through hole 46 is formed by the Etching (abbreviation RIE) method, when the diameter of the first through hole 44 is 75 μm to 90 μm, the semiconductor substrate 24 made of silicon has a depth of 100 μm in the first direction Z. A 150 μm non-through hole 46 can be formed. At this time, SF ₆ and C ₄ F ₈ are used as the etching gas. SF ₆ is responsible for etching the semiconductor substrate. C ₄ F ₈ forms a polymer protective film on the inner peripheral surface of the semiconductor substrate facing the hole formed by etching, and is perpendicular to the first direction Z of the inner peripheral surface of the semiconductor substrate facing the hole. It plays the role which makes the remaining surface except a surface hard to be etched. By using the RIE method, the non-through hole 46 having a high aspect ratio can be formed in the semiconductor substrate 24.
When step S14 ends, the process proceeds to step S15.

  FIG. 5 (3) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the insulating resin material 47 after step S15. In step S15, first, the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is set to a first pressure P1. The first pressure P1 is selected from 1 kpa to 5 kpa. Preferably, the first pressure P1 is selected to be about 1 kpa. In the steps S15 to S16, the temperature of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is kept at room temperature. The normal temperature is, for example, 20 ° C to 30 ° C.

  Next, the plate-like printing mask body 51 having a flat one surface 38 in the thickness direction and the other surface 37 has the other surface 37 in the thickness direction of the printing mask body 51 and the first surface Z one surface 34 of the metal layer 40. Arrange to face each other. The mask 51 for printing is formed with a mask through-hole 50 having a substantially right cylindrical shape that penetrates in the thickness direction. At this time, the printing mask body 51 is arranged so that the central axis of the mask through hole 50 and the central axis of the first through hole 44 coincide. The diameter of the mask through hole 50 is preferably about the same as or slightly larger than the diameter of the first through hole 44. The first direction Z other surface 37 of the printing mask body 51 and the first direction Z one surface 34 of the metal layer 40 are separated from each other by a first distance L1. The first distance L1 is selected from 500 μm to 750 μm, for example.

  Next, a paste-like insulating resin material 47 having thermosetting properties is arranged on the first direction Z one surface 38 of the printing mask body 51. The insulating resin material 47 is made of, for example, an epoxy resin. The insulating resin material 47 has electrical insulation. When the viscosity of the insulating resin material 47 is less than 10 pa · s, since the viscosity is low, the peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40, and It becomes difficult to adjust the amount of the insulating resin material 47 supplied to the first through hole 44. Moreover, when the viscosity of the insulating resin material 47 is 40 pa · s or more, the viscosity is high, and therefore it is difficult to inject the insulating resin material 47 into the non-through hole 46. Therefore, the viscosity of the insulating resin material 47 is selected as the first viscosity U1. The first viscosity U1 is preferably selected from 10 pa · s to less than 40 pa · s. When the viscosity of the insulating resin material 47 is selected as the first viscosity U1, the amount of the insulating resin material 47 supplied can be easily adjusted, and the insulating resin material 47 can be easily injected into the non-through holes 46. The insulating paste material corresponds to the insulating resin material 47.

  Next, the insulating resin material 47 is printed by moving the squeegee 52 from one side in the second direction perpendicular to the first direction Z on the first surface Z one surface 38 of the printing mask body 51 to the other side. It extends on the first direction Z one surface 38 of the mask body 51. When viewed from one side in the first direction Z, when the squeegee 52 passes through the mask through hole 50, the insulating resin material 47 is pushed into the mask through hole 50 by the squeegee 52, and the first through hole 44 and the metal layer. 40 of the first direction Z one surface 34 of 40 is supplied to the peripheral portion 53 of the metal layer 40 facing the first through hole 44. The peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40 is the first direction Z of the metal layer 40 when viewed from one side in the first direction Z. Of the surface 34, the radius R ranges from the periphery of the metal layer 40 facing the first through hole 44 to the center axis of the first through hole 44. The radius R is selected from 90 μm to 110 μm, for example.

  When the squeegee 52 is moved from one of the second directions on the surface 38 in the first direction Z of the printing mask body 51 to the other, the squeegee 52 causes the printing mask body 51 to move from the first direction Z to the other. Subject to direction pressure. Due to the pressure, the printing mask body 51 is bent toward the metal layer 40 side. Since the first direction Z one surface 34 of the metal layer 40 and the first direction Z other surface 37 of the printing mask body 51 are spaced apart by the first distance L1, the printing mask body 51 is located on the metal layer 40 side. Even if it bends, the first direction Z one surface 34 of the metal layer 40 and the first direction Z other surface 37 of the printing mask body 51 are not too close to each other. Accordingly, the other surface 37 in the first direction Z of the printing mask body 51 is not in contact with the supplied insulating resin material 47, and the supplied insulating resin material 47 is in the first direction Z of the metal layer 40 by capillary action. It does not spread on the surface 34.

  When a method of supplying the insulating resin material 47 to the first through hole 44 through the mask through hole 50 of the printing mask body 51 is used, when the plurality of first through holes 44 are formed in the metal layer 40, At the same time, the insulating resin material 47 can be supplied to the plurality of through holes, and the supply time can be shortened. Therefore, the through wiring can be efficiently formed on the substrate.

Since the thickness of the metal layer 40 is selected as the third thickness T3, the insulating resin material 47 and the one surface 33 of the first resin layer 27 are not in contact with each other. The supplied insulating resin material 47 is in contact with the peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40. Since the metal layer 40 is made of, for example, gold (Au) or nickel (Ni), the contact angle between the metal layer 40 and the insulating resin material 47 is such that the first resin layer 27 and the insulating resin material 47 Is larger than the contact angle. The contact angle between the metal layer 40 and the insulating resin material 47 is large and is not less than 60 ° and less than 80 °. Since the contact angle between the metal layer 40 and the insulating resin material 47 is large, the supplied insulating resin material 47 does not spread on the first direction Z-one surface 34 of the metal layer 40. Therefore, the first through hole 44 can be reliably closed by the insulating resin material 47, and the insulating resin closed space 54 can be reliably formed. The insulating resin closed space 54 includes a fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46, a third inner peripheral surface 57 of the first resin layer 27 facing the second through hole 45, and It is a space surrounded by a part of the surface of the insulating resin material 47 that closes the first through hole 44. The second closed space corresponds to the insulating resin closed space 54. The second closed space forming process corresponds to step S15.
When step S15 ends, the process proceeds to step S16.

In step S16, first, the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is set to the second pressure P2. The relationship between the first pressure P1 and the second pressure P2 is shown in Expression (1).
P1 <P2 (1)

The first pressure P1 is selected to be, for example, about 1 kpa. The second pressure P2 is selected to be about 100 kpa, for example. Therefore, a pressure difference is generated between the pressure in the insulating resin closed space 54 and the external pressure. The pressure outside the insulating resin enclosed space 54 is the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40. Due to this pressure difference, the supplied insulating resin material 47 is reliably injected into the non-through hole 46. At this time, the fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46 is reliably covered with the insulating resin material 47. The inner peripheral surface covering step corresponds to step S16.
When step S16 ends, the process proceeds to step S17.

  FIG. 5 (4) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the insulating film 55 after step S <b> 17 is completed. The insulating resin material 47 injected into the non-through hole 46 in step S16 is cured by heating for 60 minutes to 90 minutes in an atmosphere of 150 ° C. to 160 ° C., for example. An insulating film 55 is formed to cover the inner peripheral surface 56. The insulating paste material curing step corresponds to step S17.

For example, when the insulating resin material 47 is a thermosetting epoxy resin having a viscosity of 30 pa · s to 50 pa · s, the insulating film 55 having a thickness of 5 μm to 10 μm is formed. Can do. Here, the thickness of the insulating film 55 is defined as the distance between the one surface 60 in contact with the non-through hole 46 of the insulating film 55 and the other surface 61.
When step S17 ends, the process proceeds to step S18.

  FIG. 6B is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, and the conductive resin material 62 after step S <b> 18. In step S18, first, the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is set to the third pressure P3. The third pressure P3 is selected from 1 kpa to 5 kpa. Preferably, the third pressure P3 is selected to be about 1 kpa. In steps S18 to S19, the temperature of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is kept at room temperature.

  Next, the plate-like printing mask body 51 having a flat one surface 38 in the thickness direction and the other surface 37 has the other surface 37 in the thickness direction of the printing mask body 51 and the first surface Z one surface 34 of the metal layer 40. Arrange to face each other. The mask 51 for printing is formed with a mask through-hole 50 having a substantially right cylindrical shape that penetrates in the thickness direction. At this time, the printing mask body 51 is arranged so that the central axis of the mask through hole 50 and the central axis of the first through hole 44 coincide. The diameter of the mask through hole 50 is preferably about the same as or slightly larger than the diameter of the first through hole 44. The first direction other surface 37 of the printing mask body 51 and the first direction Z one surface 34 of the metal layer 40 are separated from each other by a second distance L2. The second distance L2 is selected from 500 μm to 750 μm, for example.

  Next, for example, a paste-like conductive resin material 62 having thermosetting properties is disposed on the first surface Z one surface 38 of the printing mask body 51. The conductive resin material 62 is, for example, a mixture of a binder made of an epoxy resin and metal particles made of Ag. The conductive resin material 62 is electrically conductive. When the viscosity of the conductive resin material 62 is less than 50 pa · s, since the viscosity is low, the peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40, and It becomes difficult to adjust the amount of the conductive resin material 62 supplied to the first through hole 44. Further, when the viscosity of the conductive resin material 62 is 150 pa · s or higher, the viscosity is high, so that it is difficult to inject the conductive resin material 62 into the non-through hole 46. Therefore, the viscosity of the conductive resin material 62 is selected as the second viscosity U2. The second viscosity U2 is preferably selected from 50 pa · s to less than 150 pa · s. When the viscosity of the conductive resin material 62 is selected as the second viscosity U2, the amount of the conductive resin material 62 supplied can be easily adjusted, and the conductive resin material 62 can be easily injected into the non-through holes 46. The conductive paste material corresponds to the conductive resin material 62.

  Next, the squeegee 52 is moved from one of the second directions on the surface 38 in the first direction Z of the printing mask body 51 to the other side, so that the conductive resin material 62 is moved to the first of the printing mask body 51. Direction Z extends on one surface 38. When viewed from one side in the first direction Z, when the squeegee 52 passes through the mask through-hole 50, the conductive resin material 62 is pushed into the mask through-hole 50 by the squeegee 52, and the first direction Z of the metal layer 40. The first surface 34 is supplied to the peripheral portion 53 of the metal layer 40 facing the first through hole 44 and the first through hole 44. When the squeegee 52 is moved from one of the second directions on the surface 38 in the first direction Z of the printing mask body 51 to the other, the squeegee 52 causes the printing mask body 51 to move from one to the other in the first direction Z. Receive pressure of direction. Due to the pressure, the printing mask body 51 is bent toward the metal layer 40 side. Since the first direction Z one surface 34 of the metal layer 40 and the first direction Z other surface 37 of the printing mask body 51 are arranged apart from each other by the second distance L2, the printing mask body 51 is disposed on the metal layer 40 side. Even if it bends, the 1st direction Z one surface 34 of the metal layer 40 and the 1st direction Z other surface 37 of the mask body 51 for printing do not approach too much. Therefore, even if the printing mask body 51 is bent toward the metal layer 40, the first direction Z other surface 37 of the printing mask body 51 does not contact the supplied conductive resin material 62, and the supplied conductive resin. The material 62 does not spread on the first direction Z surface 34 of the metal layer 40 by capillary action.

  When the conductive resin material 62 is supplied to the first through-hole 44 through the mask through-hole 50 of the printing mask body 51, when the plurality of first through-holes 44 are formed in the metal layer 40, a plurality of through-holes are simultaneously formed. The conductive resin material 62 can be supplied to the holes, and the supply time can be shortened. Therefore, the through wiring can be efficiently formed on the substrate.

Since the thickness of the metal layer 40 is selected as the third thickness T3, the conductive resin material 62 and the one surface 33 of the first resin layer 27 do not contact each other. The supplied conductive resin material 62 is in contact with the peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40. Since the metal layer 40 is made of, for example, gold (Au) or nickel (Ni), the contact angle between the metal layer 40 and the conductive resin material 62 is such that the first resin layer 27 and the conductive resin material 62 Is larger than the contact angle. The contact angle between the metal layer 40 and the conductive resin material 62 is large and is not less than 60 ° and less than 80 °. Further, since the first resin layer 27 is formed by curing a photosensitive resin material mainly composed of a novolak type epoxy resin or the like, the contact angle between the first resin layer 27 and the conductive resin material 62 is 45 ° or more and less than 60 °. Since the contact angle between the metal layer 40 and the conductive resin material 62 is large, the supplied conductive resin material 62 does not spread on the first direction Z-one surface 34 of the metal layer 40. Therefore, the first through hole 44 can be reliably closed with the conductive resin material 62, and the conductive resin closed space 63 can be reliably formed. The conductive resin closed space 63 is a space surrounded by the other surface 61 of the insulating film 55 and a part of the surface of the conductive resin material 62 that closes the first through hole 44. The closed space corresponds to the conductive resin closed space 63. The closed space forming process corresponds to step S18.
When step S18 ends, the process proceeds to step S19.

In step S19, first, the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 is set to the fourth pressure P4. The relationship between the third pressure P3 and the fourth pressure P4 is shown in Expression (2).
P3 <P4 (2)

  The third pressure P3 is selected to be, for example, about 1 kpa. The fourth pressure P4 is selected to be about 100 kpa, for example. Therefore, a pressure difference is generated between the pressure of the conductive resin closed space 63 and the external pressure. The pressure outside the conductive resin enclosed space 63 is the pressure of the atmosphere surrounding the semiconductor substrate 24, the first resin layer 27, and the metal layer 40. Due to this pressure difference, the supplied conductive resin material 62 is reliably injected into the non-through hole 46. Thereby, the conductive resin material 62 can be reliably filled in the non-through holes 46. The conductive paste material injection step corresponds to step S19.

The relationship between the capacity of the insulating resin material 47 injected into the non-through hole 46 and the capacity of the conductive resin material 62 is that the capacity of the conductive resin material 62 decreases when the capacity of the insulating resin material 47 is large. When the capacity of the insulating resin material 47 is small, the capacity of the conductive resin material 62 is increased. The ratio of the capacity V1 of the insulating resin material 47 injected into the non-through hole 46 and the capacity V2 of the conductive resin material 62 is such that the capacity V1 of the insulating resin material 47 is set to 1. The capacity V2 is selected from 0.3 to 2.5, for example.
When step S19 ends, the process proceeds to step S20.

  FIG. 6 (3) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the first resin layer 27, the metal layer 40, the insulating film 55, and the through wiring layer 64 after step S <b> 20 is completed. The conductive resin material 62 injected into the non-through hole 46 in step S19 is cured by heating for 60 minutes to 90 minutes in an atmosphere of 150 ° C. to 160 ° C., for example, and the through wiring layer 64 is formed. The through wiring layer forming step corresponds to step S20.

  When step S20 ends, the process proceeds to step S21. In step S21, the semiconductor substrate 24, the first resin layer 27, and the metal layer 40 are immersed in an etching solution maintained at, for example, 25 ° C. to 40 ° C. for 5 minutes to 10 minutes. The metal layer 40 is removed by the etching solution.

  When the metal layer 40 is removed, the etching solution for removing the metal layer 40 and a part of the surface of the through wiring layer 64 are in contact with each other through the first through hole 44 and the second through hole 45. Therefore, in order to protect the through wiring layer 64 from the etching solution, the metal layer 40 may be removed by the etching solution after forming a protective film on the first direction Z surface 65 of the through wiring layer 64. The protective film for protecting the through wiring layer 64 is formed by a method similar to the method for forming the insulating film 55 and the through wiring layer 64.

When step S21 ends, the process proceeds to step S22. In step S22, the semiconductor substrate 24 and the first resin layer 27 are immersed in a stripping solution maintained at, for example, 80 ° C. to 110 ° C. for 5 minutes to 15 minutes. The first resin layer 27 is removed by the stripping solution.
When step S22 ends, the process proceeds to step S23.

FIG. 6 (4) is a cross-sectional view schematically showing a part of the semiconductor substrate 24, the through wiring layer 64, and the conductive cap 66 after step S <b> 23 is completed. In step S23, the conductive cap 66 that covers a part of the first direction one surface 29 of the connection terminal portion 22 and the first direction Z one surface 65 of the through wiring layer 64 is formed by sputtering, for example. The conductive cap 66 is made of, for example, aluminum (Al). The connection terminal portion 22 and the through wiring layer 64 are electrically connected via a conductive cap 66.
When step S23 ends, the process proceeds to step S24.

  FIG. 2 is a cross-sectional view schematically showing a part of the semiconductor substrate 20, the through wiring 21, and the conductive cap 66 after step S24. In FIG. 2, the first direction Z other surface 36 of the semiconductor substrate 24 after the end of step S23 is indicated by phantom lines. The semiconductor substrate 24 is mechanically polished from the other surface 36 side of the semiconductor substrate 24, for example, to expose the through wiring layer 64 on the surface of the semiconductor substrate 24, and the semiconductor substrate 20 and the first direction of the semiconductor substrate 20 A through wiring 21 penetrating Z is formed. In FIG. 6 (4), the first direction Z other surface 69 of the semiconductor substrate 20 formed by polishing the semiconductor substrate 24 from the other surface 36 side is indicated by phantom lines. The through wiring forming process corresponds to step S24.

  When step S24 ends, the process proceeds to step S25, and the formation process of the through wiring 21 of the semiconductor substrate 20 ends.

  When a plurality of semiconductor substrates on which through wiring is formed are stacked, the semiconductor element formed on one surface portion of the stacked semiconductor substrate is another semiconductor substrate stacked through the connection terminal portion and the through wiring Electrically connected to a semiconductor element formed on one surface portion.

  Since the second resin layer 43 is formed of a positive resist, the resolution is higher when developed compared to the case where the second resin layer 43 is formed of a negative resist. Therefore, the resist through hole 42 having a predetermined shape can be accurately formed at a predetermined position of the second resin layer 43. As described above, the first through hole 44 is formed through the resist through hole 42. The second through hole 45 is formed through the first through hole 44. The non-through hole 46 is formed through the first through hole 44 and the second through hole 45. Therefore, the position where the non-through hole 46 is formed and the shape thereof depend on the position where the resist through hole 42 is formed and the shape thereof. Further, since the through wiring 21 is formed by the through wiring layer 64 formed in the non-through hole 46, the position and the shape of the through wiring 21 are the position and the shape of the resist through hole 42. Will depend on. Therefore, by forming the second resin layer 43 with a positive resist, the resist through hole 42 having a predetermined shape can be accurately formed at a predetermined position in the second resin layer 43, and a through wiring having a predetermined shape can be formed. 21 can be accurately formed at a predetermined position of the semiconductor substrate 20.

  By the method described above, the fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46 of the semiconductor substrate 24 can be reliably covered with the insulating film 55, so that the semiconductor substrate 20 and the through wiring 21 Is reliably separated from each other by the insulating film 55. Therefore, it is possible to form the through wiring 21 that is electrically reliably insulated from the semiconductor substrate 20.

  Further, the conductive resin material 62 can be reliably filled into the non-through holes 46 of the semiconductor substrate 24. The filled conductive resin material 62 is cured to form the through wiring layer 64, and a part of the semiconductor substrate 24 is removed from the other surface 36 side, thereby extending from one surface 68 of the semiconductor substrate 20 to the other surface 69. The wiring can be reliably formed in the through hole of the semiconductor substrate 20.

  In addition, the insulating resin material 47 and the conductive resin material 62 are attached to the first through hole 44 and the peripheral portion 53 of the metal layer 40 facing the first through hole 44 in the first direction Z one surface 34 of the metal layer 40. Since the contact angle between the metal layer 40 and the insulating resin material 47 and the contact angle between the metal layer 40 and the conductive resin material 62 are large, the supplied insulating resin material 47 and conductive resin are supplied. The material 62 does not spread on the first direction Z surface 34 of the metal layer 40. Therefore, when the insulating resin material 47 and the conductive resin material 62 are cured, unnecessary flash is not formed on the first direction Z-one surface 34 of the metal layer 40. When an unnecessary flash is formed on the first direction Z surface 34 of the metal layer 40, it is necessary to perform flash removal. When performing deburring, one surface 32 of the semiconductor substrate 24 may be damaged, but in the embodiment of the present invention, unnecessary flash is not formed on the first surface Z one surface 34 of the metal layer 40, Since it is not necessary to perform deburring, the one surface 32 of the semiconductor substrate 24 is not damaged.

  In another embodiment of the present invention, the substrate on which the through wiring formed by the above-described method for forming a through wiring on the substrate is not limited to a semiconductor substrate, but may be a printed wiring board or the like. When the substrate has electrical insulation, it is not necessary to form the insulating film 55 for electrically insulating the through wiring and the substrate, and the steps S15 to S17 in the above-described embodiment are omitted. May be.

  In still another embodiment of the present invention, the shape of the first to fifth through holes described above is not limited to a substantially cylindrical shape, and may be a polygonal column shape, for example.

  In still another embodiment of the present invention, the first resin layer 27 and the second resin layer 43 described above are not limited to positive photosensitive resins, but are made of negative photosensitive resins that are soluble in the same stripping solution. It may be formed. In this case, when the second through hole 45 is formed, in order to make the first resin layer 27 easily dissolved in the stripping solution, the first resin layer 27 is formed by thermosetting the negative photosensitive resin without exposing it. To do. By forming the first resin layer 27 and the second resin layer 43 from a material soluble in the same stripping solution, the peeling of the second resin layer 43 and the formation of the second through hole 45 can be performed simultaneously. . Therefore, the process of forming the through wiring on the substrate can be facilitated.

  In still another embodiment of the present invention, the conductive resin material 62 may be filled into the non-through hole 46 by repeating the steps from step S18 to step S19 of the above-described embodiment a plurality of times. .

  As an example of filling the non-through holes 46 with the conductive resin material 62 by repeating the steps from Step S18 to Step S19 a plurality of times, a printing mask made of stainless steel (abbreviated as SUS) and having a thickness of 50 μm. The body 51 is used, and the conductive resin material 62 is a mixture of a binder made of a thermosetting paste-like epoxy resin and metal particles made of Ag, and has a viscosity of 50 pa · s to 100 pa · s. When the material is used, the process from step S18 to step S19 is repeated three times to inject the conductive resin material 62 into the non-through hole 46, so that the diameter is 75 μm to 90 μm and the depth in the first direction Z is The conductive resin material 62 can be completely filled in the non-through holes 46 of 100 μm to 150 μm.

  In still another embodiment of the present invention, instead of the first resin layer 27 and the metal layer 40 formed on the semiconductor substrate 24, a single paste material supply layer made of, for example, Au may be formed. Good. The contact angle between the paste material supply layer formed on the first surface Z one surface 32 of the semiconductor substrate 24 and the conductive resin material 62 is large and selected from 60 ° to less than 80 °.

  FIG. 7 is a flowchart showing a method for forming a through wiring of a substrate according to still another embodiment of the present invention. The method for forming a through-wiring of a substrate according to this embodiment and the method for forming a through-wiring of a substrate according to the above-described embodiment are the insulating resin in step S15 of the method for forming a through-wiring of a substrate according to the above-described embodiment. Only the supply process of the material 47 and the supply process of the conductive resin material 62 in step S18 are different. Each process of step A0 to step A14 shown in the flowchart of FIG. 7 of the present embodiment corresponds to each process of step S0 to step S14 shown in the flowchart of FIG. 1 of the above-described embodiment. Each process of step A16 and step A17 shown in the flowchart of FIG. 7 of the present embodiment corresponds to each process of step S16 and step S17 shown in the flowchart of FIG. 1 of the above-described embodiment. Each process of step A19 to step A25 shown in the flowchart of FIG. 7 of the present embodiment corresponds to each process of step S19 to step S25 shown in the flowchart of FIG. 1 of the above-described embodiment. For this reason, the corresponding parts are denoted by the same reference numerals and redundant description is omitted.

  In Step A15, the insulating resin material 47 is applied to the peripheral portion 53 of the metal layer 40 facing the first through hole 44 out of the first through hole 44 and the first direction Z surface 34 of the metal layer 40 using a dispenser. Supply.

  Since the dispenser is used, the insulating resin material 47 can be accurately supplied to a predetermined position. In addition, the supply amount can be easily adjusted. Therefore, the first through hole 44 can be more reliably closed with the insulating resin material 47. Therefore, the insulating resin material 47 can be reliably injected into the non-through holes 46 of the semiconductor substrate 24 using the pressure difference, and the semiconductor substrate facing the non-through holes 46 by the insulating resin material 47. The fourth inner peripheral surface 56 of 24 can be covered more reliably. Therefore, by curing the insulating resin material 47, it is possible to form the insulating film 55 that covers the fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46 more reliably.

  In Step A18, the conductive resin material 62 is applied to the peripheral portion 53 of the metal layer 40 facing the first through hole 44 out of the first through hole 44 and the first direction Z surface 34 of the metal layer 40 using a dispenser. Supply.

  Since the dispenser is used, the conductive resin material 62 can be accurately supplied to a predetermined position. In addition, the supply amount can be easily adjusted. Therefore, the first through hole 44 can be more reliably closed with the conductive resin material 62. Therefore, the conductive resin material 62 can be reliably injected through the non-through holes 46 of the semiconductor substrate 24 using the pressure difference. Since the insulating film 55 that reliably covers the fourth inner peripheral surface 56 of the semiconductor substrate 24 facing the non-through hole 46 is formed, the conductive resin material 62 injected into the non-through hole 46 is formed by the insulating film 55. It is more reliably separated from the semiconductor substrate 24.

  The conductive resin material 62 injected into the non-through hole 46 is cured to form the through wiring layer 64, and a part of the semiconductor base 24 is removed from the other surface 36 side, thereby more reliably connecting to the semiconductor substrate 20. The wiring that is electrically insulated and extends from one surface 68 of the semiconductor substrate 20 to the other surface 69 can be reliably formed by the through hole of the semiconductor substrate 20.

  Since the present embodiment has the same configuration as that of the above-described embodiment, the effect similar to that of the method of forming the through-wiring of the substrate of the above-described embodiment is described with respect to the formation of the through-wiring of the substrate of the present embodiment. The method is likewise obtained.

It is a flowchart showing the formation method of the penetration wiring of the board | substrate of one Embodiment of this invention. FIG. 2 is a cross-sectional view schematically showing a part of a semiconductor substrate on which a through wiring is formed by the procedure shown in the flowchart of FIG. 1. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of a penetration wiring. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of a penetration wiring. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of a penetration wiring. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of a penetration wiring. It is a flowchart showing the formation method of the penetration wiring of the board | substrate of other embodiment of this invention. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of the penetration wiring of the 1st prior art. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of the penetration wiring of the 2nd prior art. It is sectional drawing which shows typically a part of semiconductor substrate in the middle of formation of the penetration wiring of the 2nd prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 20 Semiconductor substrate 21 Through-wire 23 Terminal part through-hole 24 Semiconductor base material 27 1st resin layer 40 Metal layer 42 Resist through-hole 43 2nd resin layer 44 1st through-hole 45 2nd through-hole 46 Non-through-hole 47 Insulating resin Material 50 Mask through hole 51 Mask body for printing 52 Squeegee 54 Insulating resin closed space 55 Insulating film 62 Conductive resin material 63 Conductive resin closed space 64 Through wiring layer

Claims (12)

A method for forming a through-wiring of a substrate, wherein the through-wiring is formed on the substrate using a conductive paste material,
A resin layer forming step of forming a resin layer formed of resin on one surface in the thickness direction of the substrate;
A metal layer forming step of forming a metal layer formed of metal on one surface in the thickness direction of the resin layer;
A first through hole forming step of forming a first through hole penetrating the metal layer in a thickness direction of the metal layer;
A second through hole forming step of forming a second through hole penetrating the resin layer in the thickness direction of the resin layer and communicating with the first through hole;
A non-through hole forming step for forming a non-through hole extending from one surface in the thickness direction of the substrate toward the other surface and communicating with the second through hole in the base material;
A closed space is formed by covering the first through hole with the conductive paste material so as to cover a peripheral portion of the metal layer facing the first through hole on one surface in the thickness direction of the metal layer. Process,
By increasing the pressure outside the closed space higher than the pressure in the closed space, the conductive paste material closing the first through hole in the closed space forming step is injected into the non-through hole. Paste material injection process,
A through-wiring layer forming step of curing the conductive paste material injected into the non-through holes and forming a through-wiring layer;
A part of the base material is removed from the other surface side to expose the through wiring layer, and includes a substrate and a through wiring forming step of forming a through wiring that penetrates the substrate in the thickness direction,
The metal layer is formed such that a contact angle between the metal layer and the conductive paste material in the closed space forming step is larger than a contact angle between the resin layer and the conductive paste material. A method of forming a through-wiring on a substrate. The base material is formed of at least a semiconductor,
An insulating film forming step of covering an inner peripheral surface of the base material facing the non-through hole with an insulating film made of an electrically insulating material between the non-through hole forming step and the closed space forming step; The method for forming a through wiring of a substrate according to claim 1. The insulating film forming step includes
An insulating paste material made of a resin material and having an electrical insulating property covers the peripheral edge of the metal layer facing the first through hole on one surface in the thickness direction of the metal layer, thereby closing the first through hole. A second closed space forming step for forming a second closed space;
By making the pressure outside the second closed space higher than the pressure in the second closed space, the insulating paste material that has closed the first through-hole in the second closed space forming step is used as the unsealed paste material. An inner peripheral surface covering step for injecting into the through hole and covering the inner peripheral surface of the base material facing the non-through hole with the insulating paste material,
An insulating paste material curing step of curing the insulating paste material covering the inner peripheral surface of the base material facing the non-through hole to form the insulating film,
The metal layer is formed such that a contact angle between the metal layer and the insulating paste material in the second closed space forming step is larger than a contact angle between the resin layer and the insulating paste material. The method for forming a through wiring of a substrate according to claim 2.   In the closed space forming step, a mask body in which a hole penetrating in the thickness direction is arranged with one surface in the thickness direction of the metal layer facing the other surface in the thickness direction of the mask body, and the conductive paste 4. The through wiring of a substrate according to claim 1, wherein a material is supplied from one surface in the thickness direction of the mask body to the first through hole through a hole of the mask body. 5. Forming method. In the closed space forming step, a mask body in which a hole penetrating in the thickness direction is arranged with one surface in the thickness direction of the metal layer facing the other surface in the thickness direction of the mask body, and the conductive paste A material is supplied from one surface in the thickness direction of the mask body to the first through hole through the hole of the mask body;
In the second closed space forming step, one surface in the thickness direction of the metal layer and the other surface in the thickness direction of the mask body are arranged to face each other, and the insulating paste material is disposed from one surface in the thickness direction of the mask body. 4. The method for forming a through-wiring of a substrate according to claim 3, wherein the first through-hole is supplied to the first through-hole through the hole of the mask body.   The method for forming a through-wiring of a substrate according to claim 1, wherein, in the closed space forming step, the conductive paste material is supplied to the first through-hole using a dispenser. . In the closed space forming step, the conductive paste material is supplied to the first through hole using a dispenser,
4. The method of forming a through wiring on a substrate according to claim 3, wherein in the second closed space forming step, the insulating paste material is supplied to the first through hole using a dispenser. The first through hole forming step includes
A second resin layer through-hole forming step for forming a second resin layer formed of a resin and having a hole penetrating in the thickness direction on one surface in the thickness direction of the metal layer;
A metal layer through-hole forming step of forming in the metal layer the first through-hole penetrating in the thickness direction of the metal layer and communicating with the hole of the second resin layer,
In the second through hole forming step, the second resin layer is peeled off by a peeling solution, and the resin layer is penetrated by the peeling solution in the thickness direction of the resin layer and communicated with the first through hole. The method for forming a through wiring of a substrate according to claim 1, wherein a second through hole is formed.   9. The method for forming a through wiring of a substrate according to claim 8, wherein the second resin layer is formed of a positive resist.   10. The method of forming a through wiring on a substrate according to claim 9, wherein the resin layer is formed of a positive resist. The resin layer forming step includes
A photosensitive resin layer forming step of forming a photosensitive resin layer by applying a photosensitive resin on one surface in the thickness direction of the substrate;
A photosensitive resin layer exposure step of exposing the entire photosensitive resin layer from one surface side in the thickness direction of the photosensitive resin layer;
The method for forming a through wiring of a substrate according to claim 10, further comprising: a photosensitive resin layer curing step of curing the exposed photosensitive resin layer to form the resin layer. A method for forming a through-wiring of a substrate, wherein the through-wiring is formed on the substrate using a conductive paste material,
A paste material supply layer forming step of forming a paste material supply layer in which the conductive paste material is supplied on one surface in the thickness direction of the substrate;
A through-hole forming step for forming a through-hole penetrating in the thickness direction of the paste material supply layer in the paste material supply layer;
A non-through hole forming step for forming a non-through hole extending from one surface in the thickness direction of the substrate toward the other surface and communicating with the through hole in the base material;
A closed space forming step of forming a closed space by covering the peripheral edge portion of the paste material supply layer facing the through hole in the thickness direction surface of the paste material supply layer with the conductive paste material, thereby closing the through hole. When,
Paste material injecting step of injecting the conductive paste material, which has closed the through hole in the closed space forming step, into the non-through hole by making the pressure outside the closed space higher than the pressure in the closed space When,
A through-wiring layer forming step of curing the conductive paste material injected into the non-through holes and forming a through-wiring layer;
A part of the base material is removed from the other surface side to expose the through wiring layer, and includes a substrate and a through wiring forming step of forming a through wiring that penetrates the substrate in the thickness direction,
The paste material supply layer is formed so that a contact angle between the paste material supply layer and the conductive paste material in the closed space forming step is selected to be 60 ° or more and less than 80 °. Method for forming wiring.

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