JP2006100586A - Grinding method for laminate - Google Patents

Grinding method for laminate Download PDF

Info

Publication number
JP2006100586A
JP2006100586A JP2004285100A JP2004285100A JP2006100586A JP 2006100586 A JP2006100586 A JP 2006100586A JP 2004285100 A JP2004285100 A JP 2004285100A JP 2004285100 A JP2004285100 A JP 2004285100A JP 2006100586 A JP2006100586 A JP 2006100586A
Authority
JP
Japan
Prior art keywords
grinding
plate
gap
laminate
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004285100A
Other languages
Japanese (ja)
Other versions
JP4734677B2 (en
Inventor
Manjiro Watanabe
万次郎 渡辺
Yoshihisa Negishi
能久 根岸
Hiroshi Maeda
弘 前田
Hitoshi Shimamura
均 嶋村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Fujifilm Microdevices Co Ltd
Original Assignee
Fujifilm Microdevices Co Ltd
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004285100A priority Critical patent/JP4734677B2/en
Application filed by Fujifilm Microdevices Co Ltd, Fuji Photo Film Co Ltd filed Critical Fujifilm Microdevices Co Ltd
Priority to US11/663,561 priority patent/US20080003926A1/en
Priority to KR1020087023300A priority patent/KR100902520B1/en
Priority to EP05787658A priority patent/EP1800340A4/en
Priority to KR1020077006409A priority patent/KR100884508B1/en
Priority to PCT/JP2005/018233 priority patent/WO2006035963A1/en
Priority to TW094133634A priority patent/TWI305377B/en
Publication of JP2006100586A publication Critical patent/JP2006100586A/en
Application granted granted Critical
Publication of JP4734677B2 publication Critical patent/JP4734677B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a grinding method for a laminate which can prevent a substrate from being damaged by fragments of a plate-like object occurring at the time of grind-cutting the plate-like object of a laminate which is made by joining the plate-like object to the substrate with an extremely narrow gap part left in-between. <P>SOLUTION: When grind-cutting the plate-like object by cutting with a grinding stone into the gap part of the laminate made by joining the substrate and the plate-like object with the gap part left in-between, a protection layer for the substrate is formed in advance in the gap part to prevent the substrate from being damaged by the fragments of the plate-like object occurring during the grinding operation. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、積層体の研削加工方法に関し、特にチップサイズパッケージ(CSP)タイプの固体撮像装置等の中空構造を有する積層体を研削切断する研削加工方法に関するものである。   The present invention relates to a method for grinding a laminate, and more particularly to a grinding method for grinding and cutting a laminate having a hollow structure such as a chip size package (CSP) type solid-state imaging device.

デジタルカメラや携帯電話に用いられるCCDやCMOSからなる固体撮像装置は、益々小型化が要求されている。このため、固体撮像素子チップ全体をセラミックス等のパッケージに気密封止した従来の大型パッケージから最近では、固体撮像素子チップの大きさと略等しい大きさのチップサイズパッケージ(CSP)タイプに移行しつつある。   A solid-state imaging device composed of a CCD or a CMOS used for a digital camera or a mobile phone is increasingly required to be downsized. For this reason, the conventional large package in which the entire solid-state image sensor chip is hermetically sealed in a ceramic package or the like has recently been shifted to a chip size package (CSP) type having a size substantially equal to the size of the solid-state image sensor chip. .

このような中で、ウェーハ(半導体基板)上に多数形成された各固体撮像素子の受光部を包囲する位置に対応させて、透明ガラス板にスペーサを形成するとともに、隣同士との分離溝を形成し、一方ウェーハにも隣のチップとの分離溝を形成し、この透明ガラス板をスペーサ部分でウェーハに接着してウェーハとの間に空隙部を形成し、しかる後に透明ガラス板及びウェーハを化学的機械研磨(CMP)で分離溝に達するまで研磨して個々の固体撮像装置に分離する方法が提案されている。この透明ガラス板の分離溝の幅は、固体撮像素子の受光部の外側に形成され外部から配線等を行うためのパッド面を露出させるのに必要な幅がとられている(例えば、特許文献1参照。)。   Under such circumstances, a spacer is formed on the transparent glass plate in correspondence with the position surrounding the light receiving portion of each solid-state imaging device formed on the wafer (semiconductor substrate), and a separation groove between adjacent ones is formed. On the other hand, a separation groove with the adjacent chip is also formed on the wafer, and this transparent glass plate is bonded to the wafer at the spacer portion to form a gap between the wafer, and then the transparent glass plate and the wafer are bonded. There has been proposed a method in which chemical mechanical polishing (CMP) is performed until the separation grooves are reached and separated into individual solid-state imaging devices. The width of the separation groove of the transparent glass plate is a width necessary for exposing a pad surface formed on the outside of the light receiving portion of the solid-state imaging device for performing wiring and the like from the outside (for example, Patent Documents). 1).

しかし、この特許文献1に記載された技術では、個々の固体撮像装置に分離するために、透明ガラス板及びウェーハの双方に予め分離溝を形成する工程が必要であり、更に化学的機械研磨によって透明ガラス板及びウェーハを研磨して分離溝に達するまで厚さを減じているため、分離のための時間が長いという問題があった。
特開2004−6834号公報
However, in the technique described in Patent Document 1, in order to separate the individual solid-state imaging devices, a step of forming separation grooves in advance on both the transparent glass plate and the wafer is necessary, and further by chemical mechanical polishing. Since the thickness is reduced until the transparent glass plate and the wafer are polished and reach the separation groove, there is a problem that the time for separation is long.
JP 2004-6834 A

このような問題を解決するために、例えばダイシング装置等を使用して、ウェーハのパッド面を露出させるのに必要な幅を有する円盤状砥石(ダイシングブレード)を用い、砥石の最下点が前述の空隙部分を通過するように透明ガラス板を研削切断し、続いて別の薄い円盤状砥石(ダイシングブレード)でウェーハ部分を研削切断する方法が考えられる。   In order to solve such a problem, for example, using a dicing machine or the like, a disc-shaped grindstone (dicing blade) having a width necessary for exposing the pad surface of the wafer is used. A method is conceivable in which the transparent glass plate is ground and cut so as to pass through the gap portion, and then the wafer portion is ground and cut with another thin disc-like grindstone (dicing blade).

しかし、このような砥石を用いて研削切断する方法の場合、例えばウェーハと透明ガラス板との間に形成された空隙部の隙間が100μm程度と極く狭い場合は、図5(a)、及び図5(a)のA−A’断面と一部拡大図を表わす図5(b)に示すように、透明ガラス板12の研削切断を進めていく中で生ずるガラス破片12Aが排出時に砥石52とウェーハ11との隙間に巻き込まれ、掻き回され、極端には引きずられることで、ウェーハ11側に損傷を与えてしまうという重大な問題があった。   However, in the case of a method of grinding and cutting using such a grindstone, for example, when the gap of the gap formed between the wafer and the transparent glass plate is as narrow as about 100 μm, FIG. As shown in FIG. 5 (b) showing the AA 'cross-section and a partially enlarged view of FIG. 5 (a), the glass fragments 12A generated during the grinding and cutting of the transparent glass plate 12 are removed when the grinding stone 52 is discharged. There is a serious problem that the wafer 11 is damaged by being caught in the gap between the wafer 11 and the wafer 11, being stirred, and being extremely dragged.

本発明は、このような事情に鑑みてなされたもので、例えば固体撮像装置のように、極く狭い空隙部を有して接合された基板と板状物とで構成された積層体の板状物を研削切断するにあたり、研削切断中に生ずる板状物の破片によって基板が損傷されるのを防止することの出来る、積層体の研削加工方法を提供することを目的とする。   The present invention has been made in view of such circumstances. For example, as in a solid-state imaging device, a laminate plate composed of a substrate and a plate-like object joined with an extremely narrow gap. An object of the present invention is to provide a method for grinding a laminated body, which can prevent a substrate from being damaged by plate-like fragments generated during grinding and cutting.

前記目的を達成するために、請求項1に記載の発明は、板状物と基板とが該板状物に形成された凸部又はスペーサを介して接合され、前記基板と前記板状物との間に空隙部が設けられた積層体の、前記空隙部内まで砥石で切り込んで前記板状物を研削切断する積層体の研削加工方法において、予め前記空隙部に保護材料を配置して前記基板の保護層を形成し、前記板状物を研削切断することを特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, a plate-like object and a substrate are joined via a convex portion or a spacer formed on the plate-like object, and the substrate, the plate-like object, In the method of grinding a laminated body in which a gap portion is provided, the laminate is cut into the gap portion with a grindstone to grind and cut the plate-like material, a protective material is disposed in advance in the gap portion, and the substrate The protective layer is formed, and the plate-like material is ground and cut.

請求項1の発明によれば、板状物を研削切断する前に、予め空隙部に基板の保護層を形成するので、極く狭い空隙部であっても板状物の研削切断中に生ずる破片によって基板が損傷されることがない。   According to the first aspect of the present invention, since the protective layer of the substrate is previously formed in the gap before grinding and cutting the plate-like material, even if the gap is extremely narrow, it occurs during the grinding and cutting of the plate-like material. The substrate is not damaged by debris.

請求項2に記載の発明は、請求項1の発明において、前記空隙部に流動性材料を充填することによって前記保護層を形成することを特徴としている。請求項2の発明によれば、空隙部に流動性材料を充填するので、極く狭い空隙部であっても容易に保護層を形成することができる。   The invention according to claim 2 is characterized in that, in the invention according to claim 1, the protective layer is formed by filling the gap with a fluid material. According to the second aspect of the present invention, since the fluid material is filled in the gap, the protective layer can be easily formed even if the gap is extremely narrow.

請求項3に記載の発明は、請求項2の発明において、前記流動性材料を減圧環境下で前記空隙部に充填することを特徴としている。請求項3の発明によれば、減圧環境下で流動性材料を空隙部に充填するので、極く狭い空隙部であっても容易流動性材料を充填することができる。   A third aspect of the invention is characterized in that, in the second aspect of the invention, the fluid material is filled in the gap under a reduced pressure environment. According to the third aspect of the present invention, since the fluid material is filled in the voids under a reduced pressure environment, the fluid material can be filled easily even in an extremely narrow void.

請求項4に記載の発明は、請求項2または請求項3の発明において、前記研削加工の前に、前記空隙部に充填した前記流動性材料を冷却して固化させることを特徴としている。請求項4の発明によれば、研削加工の前に流動性材料を冷却して固化させるので、良好な保護層として機能し、板状物の研削切断中に生ずる破片によって基板が損傷されることがない。   The invention of claim 4 is characterized in that, in the invention of claim 2 or claim 3, the fluid material filled in the gap is cooled and solidified before the grinding. According to the invention of claim 4, since the fluid material is cooled and solidified before the grinding process, it functions as a good protective layer, and the substrate is damaged by debris generated during grinding and cutting of the plate-like object. There is no.

請求項5に記載の発明は、請求項4の発明において、前記研削加工を前記流動性材料の融点以下の温度環境で行うことを特徴としている。請求項5の発明によれば、流動性材料の融点以下の温度環境で研削加工を行うので、固化された流動性材料が固化の状態を維持したまま研削され、保護層としての機能が良好に維持される。   The invention according to claim 5 is characterized in that, in the invention according to claim 4, the grinding is performed in a temperature environment below the melting point of the flowable material. According to the invention of claim 5, since grinding is performed in a temperature environment below the melting point of the flowable material, the solidified flowable material is ground while maintaining the solidified state, and the function as a protective layer is good. Maintained.

請求項6に記載の発明は、請求項5の発明において、前記研削加工は、前記積層体を冷却機能を有するテーブルに載置して行うことを特徴としている。請求項6の発明によれば、積層体を載置するテーブルが冷却機能を有するので、流動性材料の融点以下の温度環境を維持したまま研削加工を行うことができる。   The invention according to claim 6 is the invention according to claim 5, wherein the grinding is performed by placing the laminated body on a table having a cooling function. According to invention of Claim 6, since the table which mounts a laminated body has a cooling function, it can grind, maintaining the temperature environment below melting | fusing point of a fluid material.

請求項7に記載の発明は、請求項5又は請求項6の発明において、前記研削加工では不凍液を混合した研削液を用いることを特徴としている。請求項7の発明によれば、研削液には不凍液が混合されているので、低温環境下においても研削液が凍結することがなく、良好な研削を行うことができる。   A seventh aspect of the invention is characterized in that, in the invention of the fifth or sixth aspect, a grinding liquid mixed with an antifreeze liquid is used in the grinding process. According to the seventh aspect of the present invention, since the antifreezing liquid is mixed with the grinding liquid, the grinding liquid does not freeze even in a low temperature environment, and good grinding can be performed.

請求項8に記載の発明は、請求項2又は請求項3の発明において、前記積層体を前記流動性材料に浸漬した状態で前記研削加工を行うことを特徴としている。請求項8の発明によれば、積層体を流動性材料に埋没した状態で研削加工するので、研削中に流動性材料が空隙部から流出することがなく、保護層としての機能を維持できる。   The invention according to claim 8 is characterized in that, in the invention of claim 2 or claim 3, the grinding is performed in a state where the laminate is immersed in the fluid material. According to the invention of claim 8, since the laminate is ground while being buried in the fluid material, the fluid material does not flow out of the gap during grinding, and the function as the protective layer can be maintained.

請求項9に記載の発明は、請求項1の発明において、前記板状物を前記基板に接合する前に、前記板状物の前記空隙部を形成する側の面に前記保護材料を塗布することを特徴としている。請求項9の発明によれば、板状物を基板に接合する前に板状物の空隙部を形成する側の面に予め保護材料を塗布するので、極く狭い空隙部であっても容易に保護層を形成することができる。   According to a ninth aspect of the present invention, in the first aspect of the invention, before the plate-like object is bonded to the substrate, the protective material is applied to the surface of the plate-like object on the side where the gap is formed. It is characterized by that. According to the ninth aspect of the present invention, since the protective material is applied in advance to the surface of the plate-like object on which the void is formed before the plate-like object is bonded to the substrate, it is easy even if the gap is extremely narrow. A protective layer can be formed.

以上説明したように本発明の積層体の研削加工方法によれば、板状物と基板とが空隙部を設けて積層された積層体の板状物を研削切断するにあたり、予め空隙部に基板の保護層を形成してから研削切断するので、極く狭い空隙部であっても、板状物の研削切断中に生ずる破片によって基板が損傷されることがない。   As described above, according to the method for grinding a laminated body of the present invention, when the plate-like object of the laminated body in which the plate-like object and the substrate are laminated with a gap portion is ground and cut, the substrate is previously placed in the gap portion. Since the protective layer is formed and then ground and cut, the substrate is not damaged by debris generated during the grinding and cutting of the plate-like object even in a very narrow gap.

以下添付図面に従って、本発明に係る積層体の研削加工方法の好ましい実施の形態について詳説する。尚、本実施の形態ではCSPタイプの固体撮像装置の製造工程への適用例について説明する。また、各図において同一部材には同一の番号または記号を付している。   Hereinafter, preferred embodiments of a method of grinding a laminate according to the present invention will be described in detail with reference to the accompanying drawings. In this embodiment, an application example of a CSP type solid-state imaging device to a manufacturing process will be described. In each figure, the same member is given the same number or symbol.

最初に、本発明の研削加工方法を適用するCSPタイプ固体撮像装置の製造工程の概略について説明する。図1はCSPタイプの固体撮像装置の製造工程を表わす説明図である。図1(b)に示すように、半導体基板(ウェーハ)11(本発明の基板に相当)上に固体撮像素子11Aが多数形成される。   Initially, the outline of the manufacturing process of the CSP type solid-state imaging device to which the grinding method of the present invention is applied will be described. FIG. 1 is an explanatory view showing a manufacturing process of a CSP type solid-state imaging device. As shown in FIG. 1B, a large number of solid-state imaging elements 11A are formed on a semiconductor substrate (wafer) 11 (corresponding to the substrate of the present invention).

固体撮像素子11Aの製造には一般的な半導体素子製造工程が適用され、固体撮像素子11Aは、ウェーハ11に形成された受光素子であるフォトダイオード、励起電圧を外部に転送する転送電極、開口部を有する遮光膜、層間絶縁膜、層間絶縁膜の上部に形成されたインナーレンズ、インナーレンズの上部に中間層を介して設けられたカラーフィルタ、カラーフィルタの上部に中間層を介して設けられたマイクロレンズ等で構成された微細素子が平面アレー上に配列された構造となっている。   A general semiconductor element manufacturing process is applied to manufacture the solid-state imaging device 11A. The solid-state imaging device 11A includes a photodiode that is a light receiving element formed on the wafer 11, a transfer electrode that transfers excitation voltage to the outside, and an opening. Light shielding film, interlayer insulating film, inner lens formed on the upper part of the interlayer insulating film, color filter provided on the upper part of the inner lens via an intermediate layer, provided on the upper part of the color filter via an intermediate layer The microelements composed of microlenses and the like are arranged on a planar array.

固体撮像素子11Aはこのように構成されているため、外部から入射する光がマイクロレンズ及びインナーレンズによって集光されてフォトダイオードに照射され、有効開口率が上がるようになっている。   Since the solid-state imaging device 11A is configured in this way, light incident from the outside is condensed by the microlens and the inner lens and irradiated to the photodiode, so that the effective aperture ratio is increased.

また、固体撮像素子11Aの外側には、図1(b)に示すように、外部との配線を行うためのパッド11B、11B、…が形成されている。   Further, as shown in FIG. 1B, pads 11B, 11B,... For wiring with the outside are formed outside the solid-state imaging device 11A.

図1に示した工程は、前述した固体撮像素子11Aが形成されたウェーハ11に透明ガラス板12(板状物に相当)を貼付して固体撮像素子11Aの受光部を密閉し、次いで個々の固体撮像装置21に分割する工程を概念的に表わしたものである。   In the process shown in FIG. 1, a transparent glass plate 12 (corresponding to a plate-like object) is pasted on the wafer 11 on which the above-described solid-state imaging device 11A is formed, and the light-receiving portion of the solid-state imaging device 11A is sealed, The process of dividing into the solid-state imaging device 21 is represented conceptually.

先ず、図1(a)に示すように、透明ガラス板12にシリコンからなるスペーサ13を形成する。スペーサ13の形成は、透明ガラス板12に接着剤13Aを塗布し、そこにシリコン板を接着する。次いで、フォトリソグラフィーとドライエッチング技術を用いて必要な形状のスペーサ13を形成し、最後にスペーサ13部分のみに接着剤13Bを転写する。   First, as shown in FIG. 1A, a spacer 13 made of silicon is formed on a transparent glass plate 12. The spacer 13 is formed by applying an adhesive 13A to the transparent glass plate 12 and bonding a silicon plate thereto. Next, a spacer 13 having a required shape is formed by using photolithography and dry etching technology, and finally, the adhesive 13B is transferred only to the spacer 13 portion.

次に、このようにして1面にスペーサ13が設けられた透明ガラス板12をスペーサ13を介してウェーハ11に接着する。これにより、図1(b)に示すように、ウェーハ11と透明ガラス板12との間に空隙部14を有し固体撮像素子11Aの受光部が密閉された構造の固体撮像装置21がウェーハレベルで多数形成された積層体20が製造される。   Next, the transparent glass plate 12 thus provided with the spacer 13 on one surface is bonded to the wafer 11 through the spacer 13. As a result, as shown in FIG. 1B, the solid-state imaging device 21 having a structure in which the gap portion 14 is provided between the wafer 11 and the transparent glass plate 12 and the light-receiving portion of the solid-state imaging element 11A is sealed is obtained at the wafer level. Thus, the laminate 20 formed in a large number is manufactured.

次に、厚さ0.6〜1.2mm程度の砥石で空隙部14内まで切り込んで積層体20の透明ガラス板12のみを研削切断し、透明ガラス板12の分割とウェーハ11上のパッド11B、11B、…の露出とを行う(図1(c))。次いでウェーハ11のパッド11Bとパッド11Bとの間の部分を砥石で研削切断し、個々の固体撮像装置21に分割する(図1(d))。   Next, it cuts into the space | gap part 14 with the grindstone of about 0.6-1.2 mm in thickness, and only the transparent glass plate 12 of the laminated body 20 is grinding-cut, the division | segmentation of the transparent glass plate 12, and pad 11B on the wafer 11 , 11B,... Are exposed (FIG. 1C). Next, a portion between the pad 11B and the pad 11B of the wafer 11 is cut by grinding with a grindstone and divided into individual solid-state imaging devices 21 (FIG. 1D).

なお、ウェーハ11が単結晶シリコンウェーハを用いるのが一般的であるので、スペーサ13の材質は、ウェーハ11及び透明ガラス板12と熱膨張係数等の物性が類似した材質が望ましいため、多結晶シリコンが好適である。   Since the wafer 11 is typically a single crystal silicon wafer, the material of the spacer 13 is preferably a material having physical properties similar to those of the wafer 11 and the transparent glass plate 12, such as a thermal expansion coefficient. Is preferred.

この図1(c)で示した透明ガラス板12の研削切断工程では、固体撮像装置21の薄型化により、ウェーハ11と透明ガラス板12との空隙部14の隙間は100μm程度と極度に狭いため、前述の図5(a)、及び図5(b)で説明したように、透明ガラス板12の研削切断を進めていく中で生ずるガラス破片12Aが砥石52とウェーハ11との隙間に巻き込まれ、掻き回され、或いは引きずられて、ウェーハ11側に損傷を与える。そのため、この透明ガラス板12の研削切断工程に本発明の研削加工方法が好適に用いられる。   In the grinding and cutting process of the transparent glass plate 12 shown in FIG. 1C, the gap between the gap portion 14 between the wafer 11 and the transparent glass plate 12 is extremely narrow at about 100 μm due to the thinning of the solid-state imaging device 21. As described above with reference to FIGS. 5A and 5B, the glass fragments 12 </ b> A generated during the grinding and cutting of the transparent glass plate 12 are caught in the gap between the grindstone 52 and the wafer 11. It is scratched or dragged to damage the wafer 11 side. Therefore, the grinding method of the present invention is suitably used for the grinding and cutting step of the transparent glass plate 12.

図2、及び図3は、本発明を説明する概念図である。なお、図2、及び図3における積層体20は、実際にはウェーハレベルで製造されているが、図では簡略化のため、1つの研削加工部分のみで記載している。以下図4、5においても同様である。   2 and 3 are conceptual diagrams illustrating the present invention. 2 and FIG. 3 is actually manufactured at the wafer level, but for the sake of simplification, only one grinding portion is illustrated. The same applies to FIGS.

本発明では、積層体20の空隙部14にウェーハ11を保護する保護層15の流動性材料(ゲル状のものも含む)を充填する。そのために、積層体20を保護層15の流動性材料が満たされたトレー81A中に漬し、真空ポンプ82で減圧した真空チャンバ81内に所定時間留める。これにより、積層体20の空隙部14内の空気が排出され、空隙部14内に流動性の保護層15の材料が容易に充填される。   In the present invention, the gap portion 14 of the laminate 20 is filled with a fluid material (including a gel-like material) of the protective layer 15 that protects the wafer 11. For this purpose, the laminate 20 is dipped in a tray 81A filled with the fluid material of the protective layer 15 and kept in the vacuum chamber 81 decompressed by the vacuum pump 82 for a predetermined time. As a result, the air in the gap portion 14 of the laminate 20 is discharged, and the material of the fluid protective layer 15 is easily filled in the gap portion 14.

次に、図3に示すように、積層体20をダイシング装置のウェーハテーブル51上に固定し、ダイシングブレード(砥石)52の刃先の最下端が空隙部14内に僅かに入り込む位置にセットして透明ガラス板12を研削切断する。この時、透明ガラス板12の研削切断を進めていく中でガラス破片12Aが生じても、空隙部14内に保護層15が存在するので、ウェーハ11が傷付けられることがない。   Next, as shown in FIG. 3, the laminated body 20 is fixed on the wafer table 51 of the dicing apparatus, and is set at a position where the lowermost end of the cutting edge of the dicing blade (grinding stone) 52 slightly enters the gap portion 14. The transparent glass plate 12 is ground and cut. At this time, even if glass fragments 12A are produced while grinding and cutting the transparent glass plate 12, the protective layer 15 is present in the gap portion 14, so that the wafer 11 is not damaged.

なお、図3(a)は研削切断方向と直交する方向の断面図を表わし、図3(b)は図3(a)におけるA−A’断面図を表わしている。   3A shows a cross-sectional view in a direction orthogonal to the grinding cutting direction, and FIG. 3B shows an A-A ′ cross-sectional view in FIG.

次に、ウェーハ11部分を別の薄いダイシングブレードでフルカットし、最後にスピン洗浄器で洗浄液を噴射して保護層15を取り除く。なお、積層体20はウェーハ11の裏面に図示しないダイシングシートが貼付されて研削切断加工される。そのため、個々の固体撮像装置21に分割されても、バラバラになることがない。   Next, the wafer 11 is fully cut with another thin dicing blade, and finally the cleaning liquid is sprayed with a spin cleaner to remove the protective layer 15. The laminate 20 is ground and cut by attaching a dicing sheet (not shown) to the back surface of the wafer 11. Therefore, even if it is divided into individual solid-state imaging devices 21, it does not fall apart.

次に、透明ガラス板12の厚さH1 =500μm、スペーサ13の厚さH2 =100μmの寸法で構成された積層体20に対し、ダイシングブレード52を透明ガラス板12上面からの切込み深さ530μm(即ち、ダイシングブレード52の刃先の最下端とウェーハ上面とのクリアランスH3 が70μm)で研削切断する場合において、保護層15がダイシングブレード52の回転力や研削液の噴射等によって欠乏してしまうことを抑制し、ウェーハ11の保護層として効果的に機能する実施例について説明する。 Next, the cutting depth of the dicing blade 52 from the upper surface of the transparent glass plate 12 with respect to the laminated body 20 having the thickness H 1 = 500 μm of the transparent glass plate 12 and the thickness H 2 of the spacer 13 = 100 μm. In the case of grinding and cutting at 530 μm (that is, the clearance H 3 between the lowermost edge of the dicing blade 52 and the upper surface of the wafer is 70 μm), the protective layer 15 is deficient due to the rotational force of the dicing blade 52 or the injection of grinding fluid. An example that effectively functions as a protective layer of the wafer 11 will be described.

なお、以下の実施例の共通事項として、保護層15の流動性材料を空隙部14に充填する際の真空チャンバ81の真空度は5〜80kPa程度、また、ダイシングブレード52は粒径8〜40μmのダイヤモンド砥粒をニッケルで結合したメタルボンドブレードで、直径100mm、厚さ1.0mmを用い、その回転数は4,000〜6,000rpmとした。また、ウェーハテーブル51の送り速度を0.2〜1.0mm/secとした。   In addition, as a common matter of the following examples, the vacuum degree of the vacuum chamber 81 when the fluid material of the protective layer 15 is filled in the gap portion 14 is about 5 to 80 kPa, and the dicing blade 52 has a particle size of 8 to 40 μm. The diamond abrasive grains were bonded to each other with a nickel-bonded metal blade having a diameter of 100 mm and a thickness of 1.0 mm, and the rotational speed was 4,000 to 6,000 rpm. Further, the feeding speed of the wafer table 51 was set to 0.2 to 1.0 mm / sec.

なお、ダイシングブレード52はダイヤモンド砥粒をフェノール樹脂等で結合したレジンボンドブレードの方が砥粒の自生作用が活発で切削性は良い。しかし摩耗が早いので、切込み深さを確保するためには頻繁に高さ調整をする必要があるため、実施例においてはメタルボンドブレードを使用した。   The dicing blade 52 is a resin-bonded blade in which diamond abrasive grains are bonded with a phenol resin or the like. However, since the wear is fast, it is necessary to frequently adjust the height in order to secure the depth of cut, so a metal bond blade was used in the examples.

[ 実施例1]
積層体20を保護層15となる流動性材料に浸漬し、真空チャンバ81を使用して空隙部14に流動性材料を充填した。使用した流動性材料は、ゼラチン又は寒天の含有溶液で、一旦低温で冷却固化させると常温環境下に戻しても流動化しにくい材料とした。
[Example 1]
The laminate 20 was dipped in a fluid material to be the protective layer 15, and the vacuum chamber 81 was used to fill the void portion 14 with the fluid material. The fluid material used was a solution containing gelatin or agar, and once cooled and solidified at a low temperature, the fluid material was hardly fluidized even if it was returned to a normal temperature environment.

流動性材料を空隙部14に充填後、積層体20を冷蔵庫内(4〜8℃程度)で冷却し、流動性材料をプリン状に固化させて保護層15を形成した。   After filling the gap 14 with the fluid material, the laminate 20 was cooled in the refrigerator (about 4 to 8 ° C.), and the fluid material was solidified into a pudding to form the protective layer 15.

次いで、積層体20をダイシング装置にセットし、常温環境下で透明ガラス板12を研削切断し、パッド11B、11B、…を露出させた。加工後の積層体20をダイシング装置に備えられた観察光学系を用いてモニター画面で観察したところ、ガラス破片12Aによるウェーハ11の表面の傷は、回路配線を断線させるような大きく深い傷は見当たらず、大きさ10μm以下の傷も1チップあたり10個以下で、十分許容範囲以内であった。   Next, the laminate 20 was set in a dicing apparatus, and the transparent glass plate 12 was ground and cut under a normal temperature environment to expose the pads 11B, 11B,. When the processed laminate 20 is observed on a monitor screen using an observation optical system provided in the dicing apparatus, the surface of the wafer 11 due to the glass fragments 12A is found to have a large and deep scratch that breaks the circuit wiring. Furthermore, the number of scratches having a size of 10 μm or less was 10 or less per chip, which was well within the allowable range.

[ 実施例2]
積層体20を保護層15となる流動性材料に浸漬し、真空チャンバ81を使用して空隙部14に流動性材料を充填した。使用した流動性材料は、水又はオイルとした。加工にあたっては、ダイシング装置のウェーハテーブル51の周囲を堰で囲って水又はオイルを満たし、中に積層体20をドブ漬けにして固定し、常温環境下でドブ漬けのまま透明ガラス板12を研削切断し、パッド11B、11B、…を露出させた。
[Example 2]
The laminate 20 was dipped in a fluid material to be the protective layer 15, and the vacuum chamber 81 was used to fill the void portion 14 with the fluid material. The flowable material used was water or oil. In processing, the periphery of the wafer table 51 of the dicing apparatus is surrounded by a weir and filled with water or oil, and the laminated body 20 is soaked and fixed inside, and the transparent glass plate 12 is ground while being soaked at room temperature. It cut | disconnected and the pad 11B, 11B, ... was exposed.

加工後の積層体20をモニター画面で観察したところ、ウェーハ11表面の傷は、大きさ10μmを超える傷が1チップあたり1〜2個点在するものの回路配線を断線させるような大きく深い傷は見当たらず、大きさ10μm以下の傷も1チップあたり10個程度で、許容範囲以内であった。   When the processed laminate 20 is observed on the monitor screen, the scratches on the surface of the wafer 11 are large and deep scratches that break the circuit wiring even though one or two scratches exceeding 10 μm are scattered per chip. It was not found, and there were about 10 scratches with a size of 10 μm or less per chip, which was within the allowable range.

[ 実施例3]
保護層15となる流動性材料として10℃で凍結するシリコンオイル系の高分子溶液を用い、積層体20をこの溶液に浸漬し、真空チャンバ81を使用して空隙部14に充填した。この状態で積層体20を冷蔵庫内(0〜6℃程度)に保管し、溶液を凍結固化させて保護層15を形成した。
[Example 3]
A silicon oil-based polymer solution frozen at 10 ° C. was used as the flowable material to form the protective layer 15, and the laminate 20 was immersed in this solution, and the gap portion 14 was filled using the vacuum chamber 81. In this state, the laminate 20 was stored in a refrigerator (about 0 to 6 ° C.), and the solution was frozen and solidified to form the protective layer 15.

また、ダイシング装置のウェーハテーブル51には冷凍チャックテーブルなど冷却機能を有するテーブル(テーブル表面温度0〜6℃程度)を用い、積層体20をチャックした。また、0〜6℃程度に冷却した研削水を供給することによって積層体20及びその周囲をこの液体の融点以下に保った状態とし、この状態で透明ガラス板12を研削切断してパッド11B、11B、…を露出させた。   In addition, a table having a cooling function such as a freezing chuck table (table surface temperature of about 0 to 6 ° C.) was used as the wafer table 51 of the dicing apparatus, and the laminate 20 was chucked. Further, by supplying grinding water cooled to about 0 to 6 ° C., the laminated body 20 and its surroundings are kept below the melting point of the liquid, and the transparent glass plate 12 is ground and cut in this state, and the pad 11B, 11B was exposed.

加工後の積層体20をモニター画面で観察したところ、ウェーハ11表面の傷は、大きさ10μmを超える傷は見当たらず、大きさ10μm以下の傷も1チップあたり2〜3個点在するのみで良好であった。   When the laminated body 20 after processing was observed on the monitor screen, scratches on the surface of the wafer 11 were not found to be over 10 μm in size, and only 2 to 3 scratches of 10 μm or less were scattered per chip. Met.

なお、充填する流動性材料としては常温以下で固化するものであれば良いが、水などマイナス温度で固化するものを用いた場合は、研削水には不凍液であるエチレングリコールを混合して、マイナス温度下でも氷結を防止し、液性を保持する。   The fluid material to be filled may be any material that solidifies at room temperature or lower. However, when a material that solidifies at a minus temperature such as water is used, the grinding water is mixed with ethylene glycol, which is an antifreeze, and minus. Prevents freezing even at temperatures and maintains liquidity.

[ 実施例4]
この実施例では前述の実施例1〜3と異なり、保護層15を形成する流動性材料を真空チャンバ81内で空隙部14に充填するのではなく、図4に示すように、スペーサ13が形成された透明ガラス板12をウェーハ11に接着する前に、透明ガラス板12の空隙部14となる部分に予め保護層15となる流動性材料を塗布する。
[Example 4]
In this embodiment, unlike the first to third embodiments, the fluid material forming the protective layer 15 is not filled in the gap portion 14 in the vacuum chamber 81, but the spacer 13 is formed as shown in FIG. Before adhering the transparent glass plate 12 to the wafer 11, a fluid material that becomes the protective layer 15 is applied in advance to a portion that becomes the gap portion 14 of the transparent glass plate 12.

この場合の流動性材料は、シリコンからなる界面活性剤、又はシリテクトからなる表面保護剤、或いはフォトレジストを用い、粘度は高粘度のものとした。また、塗布は手塗りでも良いが、均一に微小量塗布するために、ディスペンサを用いるのが好適である。   In this case, the flowable material is a surfactant made of silicon, a surface protective agent made of silicate, or a photoresist, and has a high viscosity. Application may be by hand, but it is preferable to use a dispenser in order to uniformly apply a minute amount.

この後、透明ガラス板12をウェーハ11に接着して積層体20とし、次いで、積層体20をダイシング装置にセットして、常温環境下で透明ガラス板12を研削切断し、パッド11B、11B、…を露出させた。   Thereafter, the transparent glass plate 12 is bonded to the wafer 11 to form a laminated body 20, then the laminated body 20 is set in a dicing apparatus, and the transparent glass plate 12 is ground and cut in a room temperature environment, and the pads 11B, 11B, ... was exposed.

加工後の積層体20をモニター画面で観察したところ、ウェーハ11の表面の傷は、回路配線を断線させるような大きく深い傷は見当たらず、大きさ10μm以下の傷も1チップあたり10個以下で、十分許容範囲以内であった。   When the processed laminate 20 was observed on the monitor screen, the surface of the wafer 11 was found to have no large and deep scratches that could break the circuit wiring, and there were 10 or less scratches of 10 μm or less per chip. It was well within the allowable range.

以上のように、本発明によれば、空隙部14への充填物がウェーハ11表面の保護層15として機能するため、研削切断加工中のガラス破片12Aによるウェーハ11の表面損傷の低減が図られる。   As described above, according to the present invention, since the filler in the gap portion 14 functions as the protective layer 15 on the surface of the wafer 11, the surface damage of the wafer 11 due to the glass fragments 12 </ b> A during grinding and cutting can be reduced. .

また、充填物が加工対象の透明ガラス板12の下に存在することで、研削加工時の透明ガラス板12の支持体としての機能も同時に果たすため、ガラス破片12Aの発生自体も抑えられて、ウェーハ11の表面損傷の低減効果につながっている。   Further, since the filler is present under the transparent glass plate 12 to be processed, it also serves as a support for the transparent glass plate 12 at the time of grinding, so that the generation of the glass fragments 12A itself is suppressed, This leads to an effect of reducing the surface damage of the wafer 11.

なお本発明は、積層体20の空隙部14に充填する保護層15の材質が、前述の実施例1〜4で用いた材質に限るものではなく、同様の物性を有する種々の材質を適用することができる。   In the present invention, the material of the protective layer 15 filled in the gap portion 14 of the laminate 20 is not limited to the material used in the first to fourth embodiments, and various materials having similar physical properties are applied. be able to.

また、透明ガラス板(板状物)12をスペーサ13を介してウェーハ(基板)11に接合した積層体20で説明したが、スペーサ13を用いずに、透明ガラス板(板状物)12にエッチング等で凸部を形成し、透明ガラス板(板状物)12をこの凸部でウェーハ(基板)11に接合して、空隙部14を形成するようにした積層体20であっても、スペーサ13を介在させた積層体20同様、本発明は極めて有効に適用することができる。   Moreover, although the laminated body 20 which joined the transparent glass plate (plate-shaped object) 12 to the wafer (substrate | substrate) 11 via the spacer 13 was demonstrated, without using the spacer 13, the transparent glass plate (plate-shaped object) 12 is used. Even if it is the laminated body 20 which formed the convex part by etching etc., joined the transparent glass plate (plate-shaped object) 12 to the wafer (substrate) 11 by this convex part, and formed the space | gap part 14, The present invention can be applied very effectively like the laminate 20 with the spacers 13 interposed.

本発明の適用対象例である固体撮像装置の組立工程を表わす説明図Explanatory drawing showing the assembly process of the solid-state imaging device which is an example to which the present invention is applied 本発明の実施の形態を説明する保護膜形成工程の概念図The conceptual diagram of the protective film formation process explaining embodiment of this invention 本発明の実施の形態を説明する研削切断工程の概念図The conceptual diagram of the grinding cutting process explaining embodiment of this invention 本発明の別の実施形態を説明する保護膜形成工程の概念図The conceptual diagram of the protective film formation process explaining another embodiment of this invention 従来の研削切断を説明する概念図Conceptual diagram explaining conventional grinding and cutting

符号の説明Explanation of symbols

11…ウェーハ(基板)、12…透明ガラス板(板状物)、12A…ガラス破片(破片)、13…スペーサ、14…空隙部、15…保護層、20…積層体、21…固体撮像装置、52…ダイシングブレード(砥石)   DESCRIPTION OF SYMBOLS 11 ... Wafer (substrate), 12 ... Transparent glass plate (plate-like object), 12A ... Glass fragment (fragment), 13 ... Spacer, 14 ... Gap, 15 ... Protective layer, 20 ... Laminate, 21 ... Solid-state imaging device 52 ... Dicing blade (grinding stone)

Claims (9)

板状物と基板とが該板状物に形成された凸部又はスペーサを介して接合され、前記基板と前記板状物との間に空隙部が設けられた積層体の、前記空隙部内まで砥石で切り込んで前記板状物を研削切断する積層体の研削加工方法において、
予め前記空隙部に保護材料を配置して前記基板の保護層を形成し、前記板状物を研削切断することを特徴とする積層体の研削加工方法。
A plate-like object and a substrate are joined via a convex portion or a spacer formed on the plate-like object, and a laminated body in which a gap is provided between the substrate and the plate-like object, to the inside of the gap In the method of grinding a laminated body in which the plate-like object is cut by grinding with a grindstone,
A method of grinding a laminate, wherein a protective material is disposed in advance in the gap to form a protective layer of the substrate, and the plate-like material is ground and cut.
前記空隙部に流動性材料を充填することによって前記保護層を形成することを特徴とする、請求項1に記載の積層体の研削加工方法。   The method for grinding a laminate according to claim 1, wherein the protective layer is formed by filling the gap with a fluid material. 前記流動性材料を減圧環境下で前記空隙部に充填することを特徴とする、請求項2に記載の積層体の研削加工方法。   The method for grinding a laminate according to claim 2, wherein the gap material is filled with the fluid material in a reduced pressure environment. 前記研削加工の前に、前記空隙部に充填した前記流動性材料を冷却して固化させることを特徴とする、請求項2または請求項3に記載の積層体の研削加工方法。   The method for grinding a laminate according to claim 2 or 3, wherein the fluid material filled in the gap is cooled and solidified before the grinding. 前記研削加工を前記流動性材料の融点以下の温度環境で行うことを特徴とする、請求項4に記載の積層体の研削加工方法。   The said grinding process is performed in the temperature environment below the melting | fusing point of the said fluid material, The grinding process method of the laminated body of Claim 4 characterized by the above-mentioned. 前記研削加工は、前記積層体を冷却機能を有するテーブルに載置して行うことを特徴とする、請求項5に記載の積層体の研削加工方法。   6. The method for grinding a laminate according to claim 5, wherein the grinding is performed by placing the laminate on a table having a cooling function. 前記研削加工では不凍液を混合した研削液を用いることを特徴とする、請求項5又は請求項6に記載の積層体の研削加工方法。   The method for grinding a laminate according to claim 5 or 6, wherein a grinding liquid mixed with an antifreeze liquid is used in the grinding process. 前記積層体を前記流動性材料に浸漬した状態で前記研削加工を行うことを特徴とする、請求項2又は請求項3に記載の積層体の研削加工方法。   The grinding method for a laminate according to claim 2 or 3, wherein the grinding is performed in a state where the laminate is immersed in the flowable material. 前記板状物を前記基板に接合する前に、前記板状物の前記空隙部を形成する側の面に前記保護材料を塗布することを特徴とする、請求項1に記載の積層体の研削加工方法。   The laminate according to claim 1, wherein the protective material is applied to a surface of the plate-like material on the side where the gap is formed before the plate-like material is bonded to the substrate. Processing method.
JP2004285100A 2004-09-29 2004-09-29 Laminate grinding method Expired - Fee Related JP4734677B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004285100A JP4734677B2 (en) 2004-09-29 2004-09-29 Laminate grinding method
KR1020087023300A KR100902520B1 (en) 2004-09-29 2005-09-27 Method of manufacturing solid state image pickup device
EP05787658A EP1800340A4 (en) 2004-09-29 2005-09-27 Method of grinding multilayer body and method of manufacturing solid state image pickup device
KR1020077006409A KR100884508B1 (en) 2004-09-29 2005-09-27 Method of grinding multilayer body
US11/663,561 US20080003926A1 (en) 2004-09-29 2005-09-27 Method of Grinding Multilayer Body and Method of Manufacturing Solid State Image Pickup Device
PCT/JP2005/018233 WO2006035963A1 (en) 2004-09-29 2005-09-27 Method of grinding multilayer body and method of manufacturing solid state image pickup device
TW094133634A TWI305377B (en) 2004-09-29 2005-09-28 Method of grinding multilayer body and method of manufacturing solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004285100A JP4734677B2 (en) 2004-09-29 2004-09-29 Laminate grinding method

Publications (2)

Publication Number Publication Date
JP2006100586A true JP2006100586A (en) 2006-04-13
JP4734677B2 JP4734677B2 (en) 2011-07-27

Family

ID=36240096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004285100A Expired - Fee Related JP4734677B2 (en) 2004-09-29 2004-09-29 Laminate grinding method

Country Status (1)

Country Link
JP (1) JP4734677B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153412A (en) * 2006-12-18 2008-07-03 Nitto Denko Corp Method of breaking substrate into pieces, manufacture method of image sensor, and thermosetting adhesive sheet

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231919A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
JP2004006834A (en) * 2002-04-22 2004-01-08 Fuji Photo Film Co Ltd Manufacturing method of solid state imaging apparatus
JP2004247486A (en) * 2003-02-13 2004-09-02 Fuji Photo Film Co Ltd Method of manufacturing solid-state imaging apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231919A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
JP2004006834A (en) * 2002-04-22 2004-01-08 Fuji Photo Film Co Ltd Manufacturing method of solid state imaging apparatus
JP2004247486A (en) * 2003-02-13 2004-09-02 Fuji Photo Film Co Ltd Method of manufacturing solid-state imaging apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153412A (en) * 2006-12-18 2008-07-03 Nitto Denko Corp Method of breaking substrate into pieces, manufacture method of image sensor, and thermosetting adhesive sheet

Also Published As

Publication number Publication date
JP4734677B2 (en) 2011-07-27

Similar Documents

Publication Publication Date Title
KR100902520B1 (en) Method of manufacturing solid state image pickup device
US10249672B2 (en) Image pickup apparatus, semiconductor apparatus, and image pickup unit
JP5939810B2 (en) Device wafer processing method
JP5497476B2 (en) Method for manufacturing solid-state imaging device
TWI313057B (en) Manufacturing method of semiconductor device
CN100490128C (en) Method of grinding multilayer body and method of manufacturing solid state image pickup device
US20120074565A1 (en) Semiconductor device provided with rear protective film on other side of semiconductor substrate and manufacturing method of the same
KR20110056290A (en) Method for manufacturing solid-state imaging device
JP6956788B2 (en) Board processing method and board processing system
US20200111658A1 (en) Wafer processing method
CN101752273A (en) Method of manufacturing semiconductor device
US6465344B1 (en) Crystal thinning method for improved yield and reliability
JP4734677B2 (en) Laminate grinding method
JP4018013B2 (en) Solid-state imaging device and method for manufacturing solid-state imaging device
JP2007165789A (en) Method for manufacturing semiconductor device
JP2004296739A (en) Method for manufacturing solid state imaging device
JP2014053351A (en) Wafer processing method
JP2007258750A (en) Solid-state imaging apparatus and method of manufacturing same
JP7313775B2 (en) Wafer processing method
JP2006093458A (en) Method for manufacturing solid-state image pickup device
JP3955541B2 (en) Method for manufacturing solid-state imaging device
JP7187115B2 (en) Wafer processing method
TW201034060A (en) Techniques for glass attachment in an image sensor package
JP2006080123A (en) Method for manufacturing solid state imaging device
JP2014053354A (en) Wafer processing method

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20060621

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101228

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110225

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110328

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110410

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140513

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees