JP2006080291A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that decreases heat dissipation at a bellows provided to its elevating/descending mechanism to suppress a temperature reduction, stably deposits and generates a thin film on a substrate even under the use of a raw material sensitive to temperature, and copes with small quantity and large variety production, and uses various kinds of raw materials. <P>SOLUTION: The substrate processing apparatus includes: a processing vessel 10 for processing a substrate 12; a support base 11 for supporting the substrate in the processing vessel; a heater 11 for heating the substrate; an elevating/descending means 4 for elevating/descending the support base; the bellows 6 provided between the processing vessel and the elevating/descending means, in order to air-tightly seal the part of the processing vessel through which part of the support base is penetrated; a bellows heater provided to the bellows at the part of the elevating/descending means; and a sub-bellows heater provided on the way of the bellows. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device by forming a thin film on a substrate such as a silicon wafer.

  In recent years, with the miniaturization of semiconductor devices, film formation at the atomic layer level is also required in the film formation process of semiconductor devices, and one of such film formation methods is ALD (Atomic Layer Deposition). The ALD is different from CVD (Chemical Vapor Diposition), which has been the mainstream in the past, with a metal-containing raw material A and an oxidizing raw material B (O3, O2, H2 O, etc.) at a relatively low temperature (for example, 250 ° C.-300 This is a method of depositing thinly on the substrate heated to [° C.] through the process of adsorption and desorption of the source gas.

  The substrate processing apparatus includes a batch type substrate processing apparatus that processes a predetermined number of substrates at once, or a single wafer type substrate processing apparatus that processes one by one. A single-wafer type substrate processing apparatus is suitable.

  In a single-wafer type substrate processing apparatus, one or two substrates are carried into an airtight processing container, the substrate is mounted on the substrate mounting table in the processing container, and is embedded in the substrate mounting table. The substrate is heated by the heated heater, and the raw material is further introduced for processing.

  The transfer of the substrate into the processing container is performed by the cooperation of the substrate loading / unloading operation by the transfer robot and the lifting / lowering operation of the substrate mounting table. The substrate mounting table is supported by a column penetrating the processing container, and the substrate mounting table is moved up and down via the column by an elevating driving unit provided outside the processing container. As shown in FIG. 5, a bellows is provided in the penetrating portion in order to maintain airtightness.

  In FIG. 5, reference numeral 1 denotes a bottom plate of the processing vessel, and 2 denotes a through hole provided in the bottom plate 1. A lifting base 3 is disposed below the bottom plate 1, and the lifting base 3 is not shown. The part can be raised and lowered. The elevating base 3 is provided with a column 4, and the column 4 passes through the bottom plate 1. A bellows 6 is provided between the flange portion 5 of the column 4 and the lower surface of the bottom plate 1, and the bellows 6 airtightly covers a portion where the column 4 penetrates the bottom plate 1. In order to transfer the substrate, the elevating base 3 moves up and down, and the bellows 6 expands and contracts following the elevating and lowering of the elevating base 3. 5A shows a state where a film forming process is being performed, and FIG. 5B shows a state where the elevating base 3 is lowered when the substrate is transferred.

  The above-mentioned raw material A and raw material B are generally very reactive, and when supplied at the same time, it is conceivable that foreign substances are generated due to a gas phase reaction and film quality is deteriorated. Therefore, when the process proceeds to the next process after the film formation process, the gas purge is performed with the inert gas so that the gas in the previous process does not remain.

  Since the inside of the bellows 6 is a gas stagnation part, conventionally, a lower purge port 7 is communicated with the lower part of the bellows 6 so that the inside of the bellows 6 is also purged of gas. Connected to a supply source (not shown) of an inert gas such as gas, the inside of the bellows 6 is also actively purged.

  Also, when a liquid source vaporized as a source gas, such as TDMAH (tetrakis (N, N-dimethylamino) hafnium (Hf [N (CH3) 2] 4)), is used, the source gas is sensitive to temperature. Yes, if there is a temperature drop at the contact portion of the raw material gas, the raw material gas will liquefy and remain even after gas purging. When the oxidizing agent in the next step is introduced, it reacts with the residual raw material gas. It may cause the generation of particles.

  The bottom plate 1 which is a part of the processing vessel is heated with aluminum or an aluminum alloy by a heater (not shown) so that the feedstock is not liquefied. The bellows 6 attached to the bottom plate 1 is made of a stainless steel metal, and the stainless steel metal has a thermal conductivity of 1/10 or less of aluminum, and the heat from the bottom plate 1 to the bellows 6 is reduced. The bellows 6 has a small bellows-like surface, a large surface area, and a large amount of heat radiation from the surface. Therefore, the temperature of the bellows 6 decreases as it goes down. In order to prevent a temperature drop at the bellows 6, a bellows lower heater 8 is provided around the lower end of the bellows 6, and the lower portion of the bellows 6 is heated by the bellows lower heater 8. .

  However, as described above, the bellows 6 is made of a stainless steel metal, and the stainless steel metal has a low thermal conductivity and the bellows 6 has a large surface area. Even if the bellows lower heater 8 is used for heating, there is a possibility that the temperature drop due to heat radiation at the intermediate portion cannot be sufficiently suppressed.

  In addition, in a situation where production of a small quantity and a variety of products is further accelerated and a film forming process method by ALD is adopted, use of a wide variety of raw materials is expected, but there are limitations when using a temperature sensitive raw material gas. There was a problem that occurred.

  In view of such circumstances, the present invention reduces heat dissipation at the bellows portion provided in the lifting mechanism, suppresses temperature drop, and stably deposits a thin film on the substrate even under temperature-sensitive raw material usage conditions. However, it is possible to deal with a small quantity and a variety of production, and to use a wide variety of raw materials.

  The present invention provides a processing container for processing a substrate, a support base for supporting the substrate in the processing container, a heater for heating the substrate, lifting means for lifting the support base, and a part of the support base A bellows provided between the processing container and the elevating means so as to keep a portion penetrating the processing container airtight with respect to the outside, a bellows heater provided on the elevating means side portion of the bellows, and the bellows The present invention relates to a substrate processing apparatus including a sub bellows heater provided in a middle portion, a processing container for processing a substrate, a support for supporting the substrate in the processing container, a heater for heating the substrate, Elevating means for elevating and lowering the support base, and a bellows provided between the processing container and the elevating means so as to keep a part of the support base penetrating the processing container airtight to the outside; Provided in the bellows And the bellows heater, said bellows heater, in which according to the substrate processing apparatus and a heat insulating cover provided between the processing container so as to cover the bellows lifting means.

  In the present invention, the bellows has an intermediate ring in the middle, the sub bellows heater relates to a substrate processing apparatus provided in the intermediate ring, and an upper end portion, a middle portion, and a lower end portion of the bellows. The cylindrical cover is provided so as to be extendable and contractible in the shape of a bamboo shoot, and the cylindrical cover relates to a substrate processing apparatus in which ends are overlapped with each other in an extended state of the bellows.

  Furthermore, the present invention relates to a substrate processing apparatus in which the heater for heating the substrate is provided on a support, and a substrate processing apparatus in which a wall heater is provided so as to heat the wall surface of the processing container.

  According to the present invention, a processing container for processing a substrate, a support base for supporting the substrate in the processing container, a heater for heating the substrate, a lifting means for moving the support base up and down, and a part of the support base A bellows provided between the processing vessel and the elevating means so as to keep a portion penetrating the processing vessel airtight with respect to the outside, a bellows heater provided on the elevating means side portion of the bellows, Since the bellows is provided with a sub bellows heater provided in the middle of the bellows, the bellows is heated by the heater at a plurality of locations, the generation of the low temperature portion is prevented, the heat radiation at the bellows portion is reduced, and the temperature drop is suppressed. It is possible to stably deposit and produce a thin film on a substrate even under temperature-sensitive raw material use conditions, to cope with a small amount and a variety of production, and to use a wide variety of raw materials.

  According to the present invention, a processing container for processing a substrate, a support base for supporting the substrate in the processing container, a heater for heating the substrate, an elevating means for moving the support base up and down, and one of the support bases are provided. A bellows provided between the processing container and the elevating means so as to keep a portion of the part penetrating the processing container airtight to the outside, a bellows heater provided on the bellows, and the bellows heater, Since it has a heat insulation cover provided between the processing container and the lifting means so as to cover the bellows, heat dissipation in the bellows part is reduced, temperature drop is suppressed, generation of low temperature part is prevented, and temperature sensitive Even under the conditions of using raw materials, a thin film can be stably deposited on the substrate, making it possible to deal with a small amount of products and to use a wide variety of raw materials.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  FIG. 1 shows a single wafer type ALD apparatus which is an example of a substrate processing apparatus in which the present invention is implemented. In FIG. 1, the same components as those shown in FIG.

  In the figure, reference numeral 10 denotes a processing container. A through-hole 2 is formed in the bottom plate 1 of the processing container 10, and a column 4 that is a part of a support base 11 is provided through the through-hole 2. A lower end of the support column 4 is supported by an elevating base 3 that is a part of the elevating means, and a support base 11 that also serves as a heater is provided at the upper end of the support column 4. An elevating drive unit (not shown) for elevating the elevating base 3 is provided outside the processing container 10, and the elevating means is configured by the elevating drive unit and the elevating base 3. A heating element such as a resistance heater (not shown) is embedded in the support base 11 to heat the substrate 12 placed on the upper surface of the support base 11. The material of the support 11 is preferably non-metallic to prevent metal contamination of the substrate 12, and examples thereof include quartz and aluminum nitride (AlN). The support 11 is provided with a temperature detector such as a thermocouple, and the heating temperature of the substrate 12 placed thereon is controlled by a control unit (not shown). The wall surface of the processing vessel 10 is heated to a required temperature, for example, 150 ° C. ± 10 ° C. by a wall heater (not shown).

  The ascending position of the support base 11 is in the substrate processing state, a cover plate 13 is provided around the support base 11 in the ascending position, and a reaction chamber 15 is provided between the cover plate 13 and the ceiling portion 14 of the processing container 10. Is defined.

  A bellows 6 is provided so as to cover the periphery of the support column 4. One end (upper end in the figure) of the bellows 6 is airtightly fixed to the lower surface of the bottom plate 1, and the other end (lower end in the figure) of the bellows 6 is It is airtightly fixed to the flange portion 5 of the column 4.

  As shown in FIG. 2, the bellows 6 has an upper end flange 16 at the upper end, a lower end flange 17 at the lower end, and an intermediate ring 18 in the middle, and a bellows lower heater 8 on the outer periphery of the lower end flange 17. A sub bellows heater 19 is provided around the intermediate ring 18. The sub bellows heater 19 is a cable heater or a rod-shaped cartridge heater. The position of the intermediate ring 18, that is, the position where the sub bellows heater 19 is provided is a portion where the temperature of the bellows 6 is the lowest, and the portion where the temperature of the bellows 6 is the lowest is obtained in advance by an experiment or the like. It is done.

  The upper end flange 16 is provided with a cylindrical bellows upper cover 21, the intermediate ring 18 is provided with a cylindrical bellows intermediate cover 22 having a smaller diameter than the bellows upper cover 21, and the bellows lower heater 8. A cylindrical bellows lower cover 23 having a diameter smaller than that of the bellows intermediate cover 22 is provided around the bellows intermediate cover 22. The bellows upper cover 21, the bellows intermediate cover 22, and the bellows lower cover 23 are in the shape of bamboo that covers the periphery of the bellows 6. The bellows upper cover 21 and the bellows are configured even when the bellows 6 is extended, that is, even when the lift base 3 is lowered (see FIG. 2B). The intermediate cover 22, the bellows intermediate cover 22 and the bellows lower cover 23 are formed with overlapping portions, and the bellows Over 6 is made so as not to be exposed to the outside. Examples of the material of the bellows upper cover 21, the bellows intermediate cover 22, and the bellows lower cover 23 are (a stainless material such as SUS304, 316, a metal material such as an aluminum alloy, or a heat-resistant non-metallic material such as PTFE and PCTFE). Is used.

  A lower purge port 7 that penetrates the bellows lower heater 8 and the lower end flange 17 and communicates with the inside of the bellows 6 is provided. The lower purge port 7 is connected to an inert gas supply source (not shown).

  At least three lift pins 25 are erected on the bottom surface of the processing vessel 10, and the lift pins 25 protrude upward through the support table 11 when the support table 11 is lowered, and lift the substrate 12 from the support table 11. It comes to support in the state. The lift pins 25 preferably have a diameter of, for example, 8 mmφ or less so that the contact area of the substrate 12 is reduced and temperature unevenness applied to the substrate 12 is reduced, and non-metallic quartz that does not contaminate the substrate 12. A material such as a product is preferable.

  A substrate transfer port 26 is provided on one side surface of the processing container 10, and the substrate transfer port 26 can be opened and closed by a gate valve 27, and the substrate 12 is transferred through the substrate transfer port 26 by a transfer robot (not shown). The substrate 12 can be placed on the support table 11 via the lift pins 25 in cooperation with the elevation of the support table 11.

  An exhaust port 28 is provided below the cover plate 13 on the other side of the processing vessel 10, and an exhaust system 29 is connected to the exhaust port 28, and pressure control means such as a variable conductance valve is provided in the middle of the exhaust system 29. 31 is provided, and the exhaust system 29 is connected to an exhaust device (not shown). The exhaust system 29 is provided with a tape heater or the like, and is heated to a predetermined temperature, for example, 150 ° C. ± 20 ° C.

  A gas supply system 32 communicates with the ceiling of the processing vessel 10, and the gas supply system 32 includes a first raw material gas supply system 32 a including a first raw material tank 33 for storing a liquefied first raw material, and a liquefied second raw material. Is constituted by a second raw material gas supply system 32b provided with a second raw material tank 34 for storing gas. The first raw material tank 33 and the second raw material tank 34 are each provided with a heater for heating the internal raw material according to the vapor pressure of the raw material.

  A first raw material transport gas line 35 and a first raw material gas supply pipe 36 are connected to the first raw material tank 33 of the first raw material gas supply system 32a. The first source gas supply pipe 36 is provided with a heater such as a tape heater, and is heated to a required temperature, for example, 150 ° C. ± 5 ° C.

  The first raw material transport gas line 35 feeds the raw material gas together with the transport gas, and an inert gas such as Ar or N2 is used as the gas species. A publishing method in which the discharge port of the raw material transport gas line 35 is submerged and supplied, and a gas transfer in which the discharge port opens in the gas phase portion of the first raw material tank 33 and sends out the gas phase in the first raw material tank 33 There is a method.

  The first source gas supply pipe 36 is connected to the ceiling portion 14 of the processing vessel 10, and the first source gas supply pipe 36 is provided with a first source valve 37, and the first source gas supply pipe 36 has a first source gas supply pipe 36. A first exhaust line 39 having a first exhaust valve 38 communicates with the upstream side of the one raw material valve 37. A first dilution gas line 42 having a first material dilution valve 41 communicates with the first material gas supply pipe 36 downstream of the first material valve 37. The first dilution gas line 42 is connected to an inert gas supply source that supplies an inert gas such as nitrogen gas (not shown).

  The second raw material gas supply system 32b has the same configuration as the first raw material gas supply system 32a, and a second raw material transport gas line 43 and a second raw material gas supply pipe 44 are connected to the second raw material tank 34. Has been. Similarly to the first source gas supply pipe 36, the second source gas supply pipe 44 is provided with a heater such as a tape heater and is heated to a required temperature, for example, 150 ° C. ± 5 ° C.

  The second source gas supply pipe 44 is connected to the ceiling portion 14 of the processing vessel 10, and the second source gas supply pipe 44 is provided with a second source valve 45, and the second source gas supply pipe 44 is provided. A second exhaust line 47 having a second exhaust valve 46 communicates with the upstream side of the second material valve 45. A second dilution gas line 49 having a second material dilution valve 48 communicates with the second material gas supply pipe 44 downstream of the second material valve 45, and the second dilution gas line 49 is not shown. Connected to an inert gas source.

  Hereinafter, the substrate processing will be described.

  With the support 11 lowered, the gate valve 27 is opened, and the substrate 12 is loaded into the processing container 10 through the substrate transfer port 26 by a substrate transfer robot (not shown) and placed on the upper end of the lift pin 25. Is done. The substrate transport robot moves backward, the support table 11 is raised, and the substrate 12 is placed on the support table 11. The gate valve 27 is closed, the inside of the processing container 10 is exhausted by the exhaust system 29, and the substrate 12 is heated by the support 11.

  The raw material gas is supplied from the first raw material tank 33 and the second raw material tank 34. Initially, the first raw material valve 37 and the second raw material valve 45 are closed until the flow rate of the vaporized raw material gas becomes constant. The exhaust gas is exhausted from the first exhaust line 39 and the second exhaust line 47 through the first exhaust valve 38 and the second exhaust valve 46.

  Simultaneously with the start of the film forming process, the first raw material is introduced from the first raw material tank 33 into the reaction chamber 15 with the first exhaust valve 38 closed and the first raw material valve 37 opened. The supply time of the first raw material is about 0.1 to 3.0 seconds. At the same time as the supply of the first raw material is completed, the first raw material valve 37 is closed and the first exhaust valve 38 is opened to exhaust the first raw material from the first exhaust line 39. At this time, if the first source gas remains between the first source valve 37 of the first source gas supply pipe 36 and the reaction chamber 15 and the concentration is not sufficiently lowered until the second source gas is introduced, There is a risk that the gas self-decomposes or reacts to become particles. Therefore, the piping length between the first raw material valve 37 and the reaction chamber 15 is preferably as short as possible. Further, in order to set the concentration of the source gas in the first source gas supply pipe 36 and the reaction chamber 15 between the first source valve 37 and the reaction chamber 15 to a predetermined concentration or less, the first source dilution valve is used. 41 is opened, and a dilution gas is introduced into the reaction chamber 15 through the first dilution gas line 42 and the first source gas supply pipe 36 for 0.1 to 10 seconds, for example, and the first source dilution valve 41 is introduced. Is closed.

  When the source gas concentration in the reaction chamber 15 becomes a predetermined concentration or less, the second source valve 45 is opened, the second exhaust valve 46 is closed, and the second source is supplied with the second source gas. It is introduced into the reaction chamber 15 through the tube 44 for a predetermined time (0.1 to 10 seconds). At the same time as the second source valve 45 is closed, the second exhaust valve 46 is opened, and the introduction of the second source gas is stopped. Further, the second raw material dilution valve 48 is opened, and the diluted gas enters the reaction chamber 15 through the second dilution gas line 49 and the second raw material gas supply pipe 44 for a predetermined time (for example, 0.1 to 10 seconds). )be introduced.

  Regarding the manner of introducing the source gas, for example, in the ALD film forming process, in addition to the Hf-based and Al-based source as the first source, an oxidant as the second source, such as H2O, O3, etc. is introduced. , (First source gas supply) → (piping, reaction chamber dilution) → (second source gas (oxidant) supply) → (piping, reaction chamber dilution) until one pipe reaches the desired film thickness. Repeatedly executed. The film thickness in one cycle varies depending on conditions, but is generally about 0.3 to 1.0 mm.

  For example, when an Al2 O3 film is formed on the substrate 12, for example, TMA (Trimethyl aluminum) is selected as the first raw material, H2 O is selected as the second raw material, and other film forming qualities are HfAlOx (multiple raw materials). Hafnium aluminate) includes TMA (Trimethyl aluminum) as the first raw material, Hf (OtBu) 4, Hf (NMe2) 4, etc. as the second raw material. When multiple raw materials are used, the raw material supply as an oxidizing agent A line is further provided.

  During the film forming process, the gas after being supplied to the substrate 12 is exhausted from the exhaust system 29 through the exhaust port 28, and the pressure in the reaction chamber 15 is detected by a pressure detector (not shown). A predetermined processing pressure is maintained by the control means 31.

  When the processing of the substrate 12 is completed, the first raw material dilution valve 41 and the second raw material dilution valve 48 are opened while the first raw material valve 37 and the second raw material valve 45 are closed, and the reaction chamber 15 is filled. An inert gas is introduced into the reaction chamber 15, and the inside of the reaction chamber 15 is purged with gas. After the support 11 is lowered, the substrate 12 is supported by the lift pins 25, and the reaction chamber 15 is brought to the same pressure as the transfer chamber. Then, the gate valve 27 is opened, and the substrate 12 processed by the transfer robot. Is carried out.

  An unprocessed substrate is carried in through the gate valve 27, and the substrate processing is repeated.

  In the processing step, as the substrate 12 is transported to the support base 11, the elevating base 3 moves up and down, and the bellows 6 expands and contracts as shown in FIGS. 2 (A) and 2 (B). .

  The bellows 6 is heated by the bellows lower heater 8 and the sub bellows heater 19, and is heated from the upper end of the bellows 6 by the bottom plate 1. Therefore, the bellows 6 as a whole is heated to a required temperature, for example, 150 ° C. ± 10 ° C.

  Moreover, the bellows upper cover 21, the bellows intermediate cover 22, and the bellows lower cover 23 provided at the upper end portion, the middle portion, and the lower end portion of the bellows 6 are expanded and contracted in the shape of a bamboo shoot, respectively, The end portions of the cover are superposed on each other, prevent the bellows 6 from being exposed, act as a heat insulating cover, suppress heat radiation from the bellows 6, and improve temperature uniformity.

  Thus, the raw material gas is prevented from coming into contact with the bellows 6 and liquefied, and the purge gas is introduced into the bellows 6 from the lower purge port 7 when the reaction chamber 15 is purged of gas. This prevents the source gas from remaining in the bellows 6.

  When the bellows 6 is long, the intermediate ring 18 may be provided at a plurality of locations, and an intermediate heater and a bellows intermediate cover may be provided respectively.

  3 and 4 show a second embodiment.

  An upper end flange 16 is provided at the upper end of the bellows 6, a lower end flange 17 is provided at the lower end, an intermediate ring 18 is provided at an intermediate position, the upper end flange 16 is attached to the bottom plate 1, and a lower bellows heater 8 is provided at the lower end flange 17. The intermediate ring 18 is provided with a sub bellows heater 19, and the bellows 6 is heated at a lower end portion, a middle portion, and an upper end portion. These configurations are the same as those in the first embodiment. The difference from the first embodiment is as follows. That is, a lantern-shaped heat insulating cover 51 is provided so as to cover the periphery of the bellows 6, and the upper end of the heat insulating cover 51 is fixed to the upper end flange 16 and the lower end of the heat insulating cover 51 is fixed to the lower end flange 17. . The heat insulation cover 51 is made of a material having elasticity and elasticity, such as silicon rubber.

  As a fixing structure of the upper end portion and the lower end portion of the heat insulating cover 51, for example, fixing is performed by the method shown in FIG.

  FIG. 4 shows a state where the upper end of the heat retaining cover 51 is fixed to the upper end flange 16.

  The cover fixing flange 52 is fixed to the upper end flange 16 with bolts 53. A cover holding groove 54 is formed in the cover fixing flange 52, and an upper end portion of the heat insulating cover 51 is inserted into the cover holding groove 54, and is fixed by bolts 55 at a required circumferential pitch. The As a method for fixing the heat insulating cover 51, the cover holding groove 52 is not formed with the cover holding groove 54, the upper end of the heat insulating cover 51 is externally fitted to the cover fixing flange 52, and further, a fixing band is used for the entire circumference. May be tightened. The cover fixing flange 52 is made of metal or heat-resistant resin (fluorinated resin, PEEK resin, etc.). When heat-resistant resin is used, heat transfer to the heat retaining cover 51 is reduced. Further, deterioration of the heat insulating cover 51 due to heat can be prevented.

  According to the heat insulating cover 51, since the periphery of the bellows 6 is completely surrounded, the outer surface of the bellows 6 can be completely shielded from the external atmosphere, and the heat retaining property is improved. Further, since the heat insulating cover 51 is provided in a non-contact state with the bellows 6, heat transfer from the bellows 6 is suppressed, and thermal deterioration of the heat insulating cover 51 can be avoided.

  The upper end of the heat insulating cover 51 may be fixed to the bottom plate 1, or the lower end of the heat insulating cover 51 may be fixed to the flange portion 5 and the elevating base 3, and the upper end of the heat insulating cover 51 may be fixed to the bottom plate. It is only necessary that the lower end is fixed to the one side and the lifting unit side.

  Needless to say, the present invention can be applied not only to the ALD substrate processing apparatus but also to the CVD substrate processing apparatus.

It is a schematic block diagram which shows embodiment of this invention. (A) (B) is explanatory drawing which shows the principal part of embodiment of this invention. (A) (B) is explanatory drawing which shows the principal part of other embodiment of this invention. It is a fragmentary figure which shows the fixing method of the upper end part of the heat retention cover in this other embodiment. (A) (B) is explanatory drawing of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Bottom plate 3 Elevating base 4 Post 6 Bellows 7 Lower purge port 8 Bellows lower heater 10 Processing vessel 11 Support base 15 Reaction chamber 16 Upper end flange 17 Lower end flange 18 Intermediate ring 19 Sub bellows heater 21 Bellows upper cover 22 Bellows intermediate cover 23 Below bellows Cover 24 Cylindrical cover 29 Exhaust system 32 Gas supply system 51 Thermal insulation cover

Claims (2)

  A processing container for processing a substrate, a support base for supporting the substrate in the processing container, a heater for heating the substrate, an elevating means for raising and lowering the support base, and a part of the support base penetrate the processing container. A bellows provided between the processing vessel and the elevating means so as to keep the portion to be airtight with respect to the outside, a bellows heater provided on the elevating means side portion of the bellows, and a middle part of the bellows A substrate processing apparatus comprising a sub-bellows heater provided.   A processing container for processing a substrate, a support base for supporting the substrate in the processing container, a heater for heating the substrate, an elevating means for raising and lowering the support base, and a part of the support base penetrate the processing container. A bellows provided between the processing container and the elevating means, a bellows heater provided on the bellows, a process for covering the bellows heater and the bellows so as to keep a portion to be airtight with respect to the outside A substrate processing apparatus comprising: a container and a heat insulating cover provided between the elevating means.

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