JP2006064488A - Semiconductor tester - Google Patents

Semiconductor tester Download PDF

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JP2006064488A
JP2006064488A JP2004246175A JP2004246175A JP2006064488A JP 2006064488 A JP2006064488 A JP 2006064488A JP 2004246175 A JP2004246175 A JP 2004246175A JP 2004246175 A JP2004246175 A JP 2004246175A JP 2006064488 A JP2006064488 A JP 2006064488A
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semiconductor
relay
semiconductor relay
relays
dut
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JP4285370B2 (en
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Wataru Igarashi
亘 五十嵐
Toshihiko Moro
利彦 茂呂
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Yokogawa Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor tester that does not have the risk of damaging a DUT, since pulse signals within the semiconductor tester are prevented from being sent out to the DUT side, even if only semiconductor relays are used as relays on a route from a pin electronics part to the DUT. <P>SOLUTION: This semiconductor tester having the pin electronics part as an output part is such that: relays on a route leading from the electronics part to a performance board are all semiconductor relays; the common connection point of a driver, a comparator, and an electronic load being parallel-connected at the electronic component, is connected to a pogo pin via a first semiconductor relay; an interrupt signal input terminal for direct-current measurement is connected to a connection point of the first semiconductor relay and the pogo pin via a series circuit of second and third semiconductor relays; and the connection points of the second and third semiconductor relays are connected to a common potential point via a fourth semiconductor relay. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は半導体試験装置に関し、詳しくは、半導体試験装置の出力部を構成するピンエレクトロニクス部の改良に関するものである。   The present invention relates to a semiconductor test apparatus, and more particularly to an improvement of a pin electronics section that constitutes an output section of a semiconductor test apparatus.

特許文献1には、半導体試験装置の出力部を構成するピンエレクトロニクス部におけるメカ(メカニカル)リレーの半導体化に関する技術が開示されている。   Patent Document 1 discloses a technique related to the semiconductorization of a mechanical relay in a pin electronics unit that constitutes an output unit of a semiconductor test apparatus.

特開2001―74816号Japanese Patent Laid-Open No. 2001-74816

図2は、半導体試験装置の概念構成図である。テストヘッド10は例えばポゴピン20を介してパフォーマンスボード30と接続されている。パフォーマンスボード30には検査対象であるDUT40が装着されている。   FIG. 2 is a conceptual configuration diagram of the semiconductor test apparatus. The test head 10 is connected to the performance board 30 via, for example, a pogo pin 20. The performance board 30 is equipped with a DUT 40 to be inspected.

テストヘッド10のポゴピン20との接続部分には、各ピン毎に、半導体試験装置の出力部を構成するピンエレクトロニクス部が設けられている。   A connection part of the test head 10 with the pogo pin 20 is provided with a pin electronics unit that constitutes an output unit of the semiconductor test apparatus for each pin.

図3は、従来のピンエレクトロニクス部の一例を示す回路図であり、DUT40がロジック回路の場合の例を示している。ピンエレクトロニクス部50には、ドライバ51、コンパレータ52、電子負荷53が並列接続されている。これら並列接続されているドライバ51、コンパレータ52、電子負荷53の共通接続点は、半導体リレーSW1とメカニカルリレーSW0の直列回路を介してポゴピンに接続されている。半導体リレーSW1とメカニカルリレーSW0の接続点には、半導体リレーSW2を介して直流(DC)測定用の割り込み信号入力端子が接続されている。   FIG. 3 is a circuit diagram showing an example of a conventional pin electronics unit, and shows an example in which the DUT 40 is a logic circuit. A driver 51, a comparator 52, and an electronic load 53 are connected to the pin electronics unit 50 in parallel. The common connection point of the driver 51, the comparator 52, and the electronic load 53 connected in parallel is connected to the pogo pin through a series circuit of the semiconductor relay SW1 and the mechanical relay SW0. An interrupt signal input terminal for direct current (DC) measurement is connected to a connection point between the semiconductor relay SW1 and the mechanical relay SW0 via the semiconductor relay SW2.

ここで、メカニカルリレーSW0は、特許文献1の段落0007に記載されているのと同様に、半導体試験装置自体の校正/診断時に、DUT40に電気信号が印加されて影響を及ぼさないように電気的に切り離すためのものである。   Here, as described in paragraph 0007 of Patent Document 1, the mechanical relay SW0 is electrically connected so that an electrical signal is not applied to the DUT 40 during calibration / diagnosis of the semiconductor test apparatus itself. It is intended for separation.

しかし、メカニカルリレーSW0は、オン抵抗は小さいものの、機械的接点構造であることから、接点の磨耗など比較的寿命が短く信頼性が低い。そこで、特許文献1にも記載されているように、半導体リレーに置き換えることが検討されている。   However, although the mechanical relay SW0 has a small on-resistance, it has a mechanical contact structure, and therefore has a relatively short life such as contact wear and low reliability. Therefore, as described in Patent Document 1, replacement with a semiconductor relay is being studied.

ところが、半導体リレーの電気的特性に着目すると、耐圧/オフ時の静電容量/オン抵抗はトレードオフの関係がある。このうち、特にオフ時の静電容量は、前述のような半導体試験装置自体の校正/診断時に半導体リレーをオフに制御していても、この静電容量を介して半導体試験装置内部のパルス信号がDUT側に送出されてしまい、DUTを破損してしまう恐れがある。   However, paying attention to the electrical characteristics of the semiconductor relay, there is a trade-off relationship between withstand voltage / off-state capacitance / on-resistance. Of these, the capacitance at the time of off is the pulse signal inside the semiconductor testing device via this capacitance even if the semiconductor relay is controlled to be off at the time of calibration / diagnosis of the semiconductor testing device itself as described above. May be sent to the DUT side and the DUT may be damaged.

ところで、特許文献1では、段落0018に記載されているように、ピンエレクトロニクス70内の全段を半導体リレー75で構成し、ピンエレクトロニクス出力部とパフォーマンスボード30とをZIFコネクタ32で接続している。ここで、ZIFコネクタ32の接点33は、段落0020に記載されているように、メカリレーと同じく機械的な構造原理によるものである。   By the way, in Patent Document 1, as described in paragraph 0018, all stages in the pin electronics 70 are configured by the semiconductor relay 75, and the pin electronics output unit and the performance board 30 are connected by the ZIF connector 32. . Here, as described in paragraph 0020, the contact 33 of the ZIF connector 32 is based on the mechanical structural principle as in the case of the mechanical relay.

このような特許文献1に記載されている装置全体の信頼性に着目すると、メカリレーと同様な機械的な構造原理による接点を有するZIFコネクタが支配的になり、比較的寿命が短く信頼性が低くなるものと考えられる。   Focusing on the reliability of the entire device described in Patent Document 1, the ZIF connector having contacts based on the mechanical structure principle similar to that of the mechanical relay is dominant, and has a relatively short life and low reliability. It is considered to be.

また、特許文献1に記載されている装置において、制御手段79が電気的に制御する範囲に着目すると、図1に示されているようにピンエレクトロニクス70部分とZIFコネクタ32部分にまで及ぶことになり、制御系統が複雑になるものと思われる。   Further, in the apparatus described in Patent Document 1, when focusing on the range electrically controlled by the control means 79, it extends to the pin electronics 70 portion and the ZIF connector 32 portion as shown in FIG. It seems that the control system becomes complicated.

本発明は、このような従来の問題点を解決するものであり、その目的は、ピンエレクトロニクス部からDUTに至る経路からメカニカルリレーを排除して半導体リレーのみにしても、半導体試験装置内部のパルス信号がDUT側に送出されることはなく、DUTを破損する恐れのない半導体試験装置を提供することにある。   The present invention solves such a conventional problem, and its object is to eliminate the mechanical relay from the path from the pin electronics section to the DUT, and to use only the semiconductor relay, so that the pulse inside the semiconductor test apparatus can be obtained. It is an object of the present invention to provide a semiconductor test apparatus in which no signal is transmitted to the DUT side and there is no fear of damaging the DUT.

このような課題を達成するために、本発明のうち請求項1記載の発明は、
ピンエレクトロニクス部を出力部とする半導体試験装置において、
これらピンエレクトロニクス部からDUTに至る経路のリレーが、全て半導体リレーであることを特徴とする。
In order to achieve such a problem, the invention according to claim 1 of the present invention is:
In semiconductor test equipment with pin electronics as an output,
All the relays on the path from the pin electronics section to the DUT are semiconductor relays.

請求項2記載の発明は、請求項1記載の半導体試験装置において、
前記ピンエレクトロニクス部で並列接続されているドライバとコンパレータと電子負荷の共通接続点は第1の半導体リレーを介してポゴピンに接続され、
第1の半導体リレーとポゴピンの接続点には第2の半導体リレーと第3の半導体リレーの直列回路を介して直流測定用の割り込み信号入力端子が接続され、
第2の半導体リレーと第3の半導体リレーの接続点は第4の半導体リレーを介して共通電位点に接続されていることを特徴とする。
According to a second aspect of the present invention, in the semiconductor test apparatus of the first aspect,
The common connection point of the driver, the comparator, and the electronic load connected in parallel in the pin electronics unit is connected to the pogo pin via the first semiconductor relay,
An interrupt signal input terminal for DC measurement is connected to a connection point between the first semiconductor relay and the pogo pin through a series circuit of the second semiconductor relay and the third semiconductor relay,
A connection point between the second semiconductor relay and the third semiconductor relay is connected to a common potential point via a fourth semiconductor relay.

請求項3記載の発明は、請求項1記載の半導体試験装置において、
ピンエレクトロニクス部を出力部とするテストヘッドがポゴピンを介してDUTに接続されていることを特徴とする。
According to a third aspect of the present invention, in the semiconductor test apparatus of the first aspect,
A test head having a pin electronics unit as an output unit is connected to the DUT through a pogo pin.

本発明によれば、ピンエレクトロニクス部からDUTに至る経路のリレーが全て半導体リレーでありながら、半導体試験装置内部のパルス信号がDUT側に送出されることはなく、DUTを破損する恐れのない半導体試験装置が実現できる。   According to the present invention, although all the relays in the path from the pin electronics section to the DUT are semiconductor relays, the semiconductor test apparatus internal pulse signal is not sent to the DUT side, and there is no possibility of damaging the DUT. A test device can be realized.

以下、本発明を図面を用いて詳細に説明する。図1は本発明の具体例を示すブロック図であって、図3と共通する部分には同一符号を付けている。図1において、並列接続されているドライバ51、コンパレータ52、電子負荷53の共通接続点は、半導体リレーSW1を介してポゴピンに接続されている。半導体リレーSW1とポゴピンの接続点には、半導体リレーSW2と半導体リレーSW3の直列回路を介して直流(DC)測定用の割り込み信号入力端子が接続されている。そして、半導体リレーSW2と半導体リレーSW3の接続点は、半導体リレーSW4を介して共通電位点に接続されている。   Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram showing a specific example of the present invention, and the same reference numerals are given to portions common to FIG. In FIG. 1, the common connection point of the driver 51, the comparator 52, and the electronic load 53 connected in parallel is connected to the pogo pin via the semiconductor relay SW1. An interrupt signal input terminal for direct current (DC) measurement is connected to a connection point between the semiconductor relay SW1 and the pogo pin through a series circuit of the semiconductor relay SW2 and the semiconductor relay SW3. A connection point between the semiconductor relay SW2 and the semiconductor relay SW3 is connected to a common potential point via the semiconductor relay SW4.

このような構成において、以下に説明する各動作モード(A)〜(C)に応じて各半導体リレーSW1〜SW4をオンオフ制御する。   In such a configuration, the semiconductor relays SW1 to SW4 are on / off controlled in accordance with the operation modes (A) to (C) described below.

(A)ファンクション動作
SW1 オン
SW2 オフ
SW3 オフ
SW4 オン
半導体リレーSW1がオンになることから、並列接続されているドライバ51、コンパレータ52、電子負荷53の共通接続点は、半導体リレーSW1を介してポゴピンに接続される。このとき、半導体リレーSW2と半導体リレーSW3はオフになるので、直流測定用割り込み信号が半導体リレーSW1とポゴピンの接続点に印加されることはない。さらに、半導体リレーSW4がオンになるので、半導体リレーSW2と半導体リレーSW3の接続点の電位は共通電位点に保持される。
これにより、並列接続されているドライバ51、コンパレータ52、電子負荷53を用いて、DUTに対する各種の試験が行われる。
(A) Function operation SW1 ON SW2 OFF SW3 OFF SW4 ON Since the semiconductor relay SW1 is ON, the common connection point of the driver 51, the comparator 52, and the electronic load 53 connected in parallel is pogo-pin via the semiconductor relay SW1. Connected to. At this time, since the semiconductor relay SW2 and the semiconductor relay SW3 are turned off, the DC measurement interrupt signal is not applied to the connection point between the semiconductor relay SW1 and the pogo pin. Further, since the semiconductor relay SW4 is turned on, the potential at the connection point between the semiconductor relay SW2 and the semiconductor relay SW3 is held at the common potential point.
As a result, various tests on the DUT are performed using the driver 51, the comparator 52, and the electronic load 53 connected in parallel.

(B)直流系測定
SW1 オフ
SW2 オン
SW3 オン
SW4 オフ
半導体リレーSW1がオフになることから、並列接続されているドライバ51、コンパレータ52、電子負荷53の共通接続点は、半導体リレーSW1のオフ時静電容量を介してポゴピンに接続される。このとき、半導体リレーSW2と半導体リレーSW3はオンになるので、直流測定用割り込み信号が半導体リレーSW1とポゴピンの接続点に印加される。ここで、半導体リレーSW4はオフになっているので、半導体リレーSW2と半導体リレーSW3の接続点の電位が共通電位点に保持されることはない。
これにより、直流測定用割り込み信号に基づき、DUTに対する直流試験が行われる。
(C)半導体試験装置自体の校正/診断
SW1 オフ
SW2 オン
SW3 オフ
SW4 オン
半導体リレーSW1がオフになることから、並列接続されているドライバ51、コンパレータ52、電子負荷53の共通接続点は、半導体リレーSW1のオフ時静電容量を介してポゴピンに接続される。このとき、半導体リレーSW2と半導体リレーSW4がオンになるので、半導体リレーSW1のオフ時静電容量を介して共通電位点にも接続されることになる。半導体リレーSW1のオフ時静電容量は、ドライバ51の負荷になる。ポゴピン(DUT)側からみると、ピンエレクトロニクス部の出力は共通電位点と接続されていることになり、半導体試験装置自体の校正/診断に用いるピンエレクトロニクス部のパルス出力がDUTに悪影響を及ぼすことはない。
(B) DC system measurement SW1 off SW2 on SW3 on SW4 off Since the semiconductor relay SW1 is off, the common connection point of the driver 51, the comparator 52, and the electronic load 53 connected in parallel is when the semiconductor relay SW1 is off. It is connected to the pogo pin through a capacitance. At this time, since the semiconductor relay SW2 and the semiconductor relay SW3 are turned on, a DC measurement interrupt signal is applied to the connection point between the semiconductor relay SW1 and the pogo pin. Here, since the semiconductor relay SW4 is off, the potential at the connection point between the semiconductor relay SW2 and the semiconductor relay SW3 is not held at the common potential point.
Thereby, the DC test for the DUT is performed based on the interrupt signal for DC measurement.
(C) Calibration / diagnosis of the semiconductor test apparatus itself SW1 off SW2 on SW3 off SW4 on Since the semiconductor relay SW1 is off, the common connection point of the driver 51, the comparator 52, and the electronic load 53 connected in parallel is a semiconductor. The relay SW1 is connected to the pogo pin through the off-time capacitance. At this time, since the semiconductor relay SW2 and the semiconductor relay SW4 are turned on, the semiconductor relay SW1 is also connected to the common potential point through the off-state capacitance of the semiconductor relay SW1. The off-state capacitance of the semiconductor relay SW1 becomes a load of the driver 51. When viewed from the pogo pin (DUT) side, the output of the pin electronics unit is connected to a common potential point, and the pulse output of the pin electronics unit used for calibration / diagnosis of the semiconductor test equipment itself adversely affects the DUT. There is no.

このような構成によれば、ピンエレクトロニクス部50からパフォーマンスボード30に至る経路のリレーが全て半導体リレーでありながら、半導体試験装置内部のパルス信号がDUT40側に送出されることはなく、DUT40を破損する恐れのない半導体試験装置が実現できる。   According to such a configuration, all the relays in the path from the pin electronics unit 50 to the performance board 30 are semiconductor relays, but the pulse signal inside the semiconductor test apparatus is not sent to the DUT 40 side, and the DUT 40 is damaged. A semiconductor test apparatus can be realized with no fear of failure.

そして、ピンエレクトロニクス部50からパフォーマンスボード30に至る経路のリレー全てが半導体リレーであることから、半導体試験装置全体の長寿命化が図れるとともに信頼性を高めることができ、メカニカルリレーがないことからこれらリレーの制御は容易になる。   And since all the relays of the path from the pin electronics unit 50 to the performance board 30 are semiconductor relays, the life of the entire semiconductor test apparatus can be extended and the reliability can be improved, and since there is no mechanical relay, these Control of the relay becomes easy.

本発明の具体例を示すブロック図である。It is a block diagram which shows the specific example of this invention. 半導体試験装置の概念構成図である。1 is a conceptual configuration diagram of a semiconductor test apparatus. 従来のピンエレクトロニクス部の一例を示す回路図である。It is a circuit diagram which shows an example of the conventional pin electronics part.

符号の説明Explanation of symbols

10 テストヘッド
20 ポゴピン
30 パフォーマンスボード
40 DUT
50 ピンエレクトロニクス部
51 ドライバ
52 コンパレータ
53 電子負荷
SW1〜SW4 半導体リレー
10 Test head 20 Pogo pin 30 Performance board 40 DUT
50-pin electronics section 51 driver 52 comparator 53 electronic loads SW1 to SW4 semiconductor relay

Claims (3)

ピンエレクトロニクス部を出力部とする半導体試験装置において、
これらピンエレクトロニクス部からDUTに至る経路のリレーが、全て半導体リレーであることを特徴とする半導体試験装置。
In semiconductor test equipment with pin electronics as an output,
A semiconductor test apparatus characterized in that all the relays in the path from the pin electronics section to the DUT are semiconductor relays.
前記ピンエレクトロニクス部で並列接続されているドライバとコンパレータと電子負荷の共通接続点は第1の半導体リレーを介してポゴピンに接続され、
第1の半導体リレーとポゴピンの接続点には第2の半導体リレーと第3の半導体リレーの直列回路を介して直流測定用の割り込み信号入力端子が接続され、
第2の半導体リレーと第3の半導体リレーの接続点は第4の半導体リレーを介して共通電位点に接続されていることを特徴とする請求項1記載の半導体試験装置。
The common connection point of the driver, the comparator, and the electronic load connected in parallel in the pin electronics unit is connected to the pogo pin via the first semiconductor relay,
An interrupt signal input terminal for DC measurement is connected to a connection point between the first semiconductor relay and the pogo pin through a series circuit of the second semiconductor relay and the third semiconductor relay,
2. The semiconductor test apparatus according to claim 1, wherein a connection point between the second semiconductor relay and the third semiconductor relay is connected to a common potential point via a fourth semiconductor relay.
ピンエレクトロニクス部を出力部とするテストヘッドがポゴピンを介してDUTに接続されていることを特徴とする請求項1記載の半導体試験装置。   2. The semiconductor test apparatus according to claim 1, wherein a test head having a pin electronics part as an output part is connected to the DUT through a pogo pin.
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WO2008062579A1 (en) * 2006-11-22 2008-05-29 Panasonic Corporation Semiconductor inspection equipment
CN100575972C (en) * 2006-12-30 2009-12-30 中国科学院上海硅酸盐研究所 The test macro and the application thereof of the electric pulse induced reversible variation of resistance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007322372A (en) * 2006-06-05 2007-12-13 Yokogawa Electric Corp Ic tester
JP2008102060A (en) * 2006-10-20 2008-05-01 Yokogawa Electric Corp Timing calibration circuit and timing calibration method of semiconductor testing device
WO2008062579A1 (en) * 2006-11-22 2008-05-29 Panasonic Corporation Semiconductor inspection equipment
CN100575972C (en) * 2006-12-30 2009-12-30 中国科学院上海硅酸盐研究所 The test macro and the application thereof of the electric pulse induced reversible variation of resistance

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