JP2006063423A - Semiconductor fabrication system and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor fabrication system and a substrate treatment method capable of performing required film deposition without anxieties about the breakage of the substrate to be treated and the generation of particles. <P>SOLUTION: The semiconductor fabrication system is equipped with: a stage 4 of holding a semiconductor wafer 2 within a treatment chamber 3; a lamp heating mechanism 16 provided at the stage 4 and heating the semiconductor wafer 2; and a chuck heating mechanism 13 provided at the stage 4, and fixedly holding the semiconductor wafer 2 to the stage 4 to heat the same. The lamp heating mechanism 16 and the chuck heating mechanism 13 can respectively independently control temperature. The semiconductor wafer 2 is heated up to a prescribed temperature by the lamp heating mechanism 16, is thereafter fixedly held to the stage 4 by the chuck heating mechanism 13, and is subjected to required treatment in such a manner that the prescribed temperature is held. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor manufacturing apparatus and a substrate processing method for performing a required process with a substrate to be processed, for example, a semiconductor wafer at a predetermined temperature.

  As is well known, for example, when forming a thin film of Al, Ti, TiN or the like on the surface of a substrate to be processed such as a semiconductor wafer, a PVD (Physical Vapor Deposition) method is used. A semiconductor manufacturing apparatus for depositing a substrate by the PVD method includes a processing chamber in which an ion gas such as Ar is introduced after being decompressed by a vacuum pump, and a substrate to be processed which is disposed in the processing chamber so as to face the evaporation source. And a stage for heating and holding the substrate to be processed to a predetermined temperature during film formation, and a power source for applying a voltage between the evaporation source and the substrate to be processed. It has become.

  As a heating mechanism for heating the substrate to be processed to a predetermined temperature, a lamp heating mechanism using a halogen lamp as a heating source or a chuck heating mechanism in which a resistance heater of a heating source is embedded in an electrostatic chuck plate is used. ing. And in what heats a to-be-processed substrate by a lamp heating mechanism, when it heats up and heats up to predetermined temperature and maintains the temperature by heating and cooling, it cannot cool efficiently, for example by plasma In the case of forming a film by generating gas ions, the temperature of the substrate to be processed is increased by the plasma energy during the film formation, so that an appropriate temperature cannot be maintained and a required film formation may not be performed. It was.

  On the other hand, in the case where the substrate to be processed is heated by the chuck heating mechanism, although the cooling can be efficiently performed by the cooling mechanism, the substrate to be processed is fixed and held by the electrostatic chuck plate on the electrostatic chuck plate provided on the stage. When the substrate is heated to a predetermined temperature and heated, the substrate to be processed tends to expand as the temperature rises. However, since the electrostatic chuck is in close contact with the Coulomb force or the Johnsen-Rahbek force, it cannot expand freely. Therefore, an excessive force is applied to the substrate to be processed, and the substrate to be processed may be damaged, or particles may be generated due to rubbing due to expansion at locations where the substrate is in contact with the electrostatic chuck plate. Further, in the chuck heating mechanism, a temperature distribution is generated on the electrostatic chuck plate, which may cause the in-plane temperature of the substrate to be processed to be in a non-uniform state. Furthermore, there is an individual difference in the heating state in the chuck heating mechanism for each device, and there is a situation that must be corrected for each device.

  The present invention has been made in view of the above situation, and the object of the present invention is to reduce the risk of damage to the substrate to be processed or generation of particles, and to appropriately set a predetermined temperature. An object of the present invention is to provide a semiconductor manufacturing apparatus and a substrate processing method capable of maintaining the required film formation.

The semiconductor manufacturing apparatus and the substrate processing method of the present invention include a stage for holding a substrate to be processed in a processing chamber, a lamp heating mechanism provided on the stage for heating the substrate to be processed, and the substrate to be processed provided on the stage. A chuck heating mechanism that heats the stage while being fixedly held on the stage, and the lamp heating mechanism and the chuck heating mechanism can be independently temperature controlled,
Furthermore, the substrate to be processed is heated to a predetermined temperature by the lamp heating mechanism, and then fixed and held on the stage by the chuck heating mechanism to maintain the predetermined temperature,
Furthermore, the chuck heating mechanism is characterized by comprising a plurality of heating units capable of independently controlling the temperature,
Further, the substrate to be processed held on the stage in the processing chamber is heated and heated to a predetermined temperature, and then fixed to the stage and processed while maintaining the predetermined temperature. .

  As is clear from the above description, according to the present invention, there is no possibility of damaging the substrate to be processed or generation of particles, and a predetermined temperature can be properly maintained. There are effects such as being able to form.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, a first embodiment will be described with reference to FIGS. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a semiconductor manufacturing apparatus, and FIG. 2 is a plan view of a main part.

  1 and 2, reference numeral 1 denotes a semiconductor manufacturing apparatus that performs a required film formation on the surface of a semiconductor wafer 2 that is a substrate to be processed by, for example, a PVD method. A processing chamber 3 for performing a film forming process, a semiconductor wafer 2 housed in the processing chamber 3 is placed, and a stage 4 that is further fixedly held, and a film forming surface of the semiconductor wafer 2 held by the stage 4 are opposed to each other. And an evaporation source 5 made of a film forming material. Furthermore, the semiconductor manufacturing apparatus 1 includes a vacuum pump (not shown) connected to an exhaust port 6 that brings the inside of the processing chamber 3 into a predetermined reduced pressure state during film formation, and an inert gas such as Ar in the reduced processing chamber 3. A gas source (not shown) for introducing the atmospheric gas, a power source (not shown) for applying a voltage between the evaporation source 5 and the semiconductor wafer 2 on the stage 4 are provided, and if necessary, the stage 4 and the evaporation source 5 are connected. A shutter is provided between them.

  The stage 4 is provided with a heating / cooling unit 7 for bringing the semiconductor wafer 2 to a predetermined temperature during film formation. The heating / cooling unit 7 fixes the semiconductor wafer 2 on the stage 4 and the cooling mechanism 10 having a disk shape fitted in a circular recess 9 cut on the upper surface side of the circular stage body 8 of the stage 4. A chuck heating mechanism 13 provided on the upper side of the cooling mechanism 10 so as to embed a resistance heater 12 as a heating source in an electrostatic chuck plate 11 having an electrostatic chuck for separation from the electrostatic chuck plate 11. A plurality of opening portions 14 that are open upward are provided with a lamp heating mechanism 16 that is formed so as to accommodate a halogen lamp 15 as a heating source.

  Further, the heating / cooling unit 7 includes a wafer temperature sensor 17 for measuring the temperature of the semiconductor wafer 2 and a chuck temperature sensor 18 for measuring the temperature of the chuck heating mechanism 13 so that the tip is embedded in the electrostatic chuck plate 11. Is provided. The measurement result of the wafer temperature sensor 17 is output to the lamp heating control unit 20 and the chuck control unit 21 provided in the control unit 19, and the measurement result of the chuck temperature sensor 18 is output to the chuck control unit 21. .

  In the lamp heating control unit 20, heating control of the lamp heating mechanism 16 is performed. On the other hand, in the chuck control unit 21, the energization time of the resistance heater 12 is controlled based on the measurement results of the wafer temperature sensor 17 and the chuck temperature sensor 18, and the heating control of the chuck heating mechanism 13 is performed. Reference numeral 22 denotes a lift pin provided in three so as to advance and retreat upward by a drive mechanism (not shown) so as to appear and disappear on the upper surface side of the stage 4. The semiconductor wafer 2 placed on the stage 4 is moved from above the stage 4. When unloading, the semiconductor wafer 2 can be easily placed and unloaded by moving forward and backward in accordance with these operations and moving in and out.

  And the film-forming with the apparatus comprised in this way is performed as follows. That is, first, the semiconductor wafer 2 is introduced into the processing chamber 3 in which the evaporation source 5 of the predetermined film forming material is disposed, and is placed on the stage 4 so that the film forming surface faces the evaporation source 5. Subsequently, the vacuum pump connected to the exhaust port 6 is operated to bring the inside of the processing chamber 3 into a predetermined reduced pressure state, and an atmospheric gas such as Ar is supplied from a gas source into the reduced processing chamber 3 through an inlet (not shown). And the inside of the processing chamber 3 is set to a predetermined gas atmosphere. In the heating / cooling unit 7, first, energization of the halogen lamp 15 is started, and the semiconductor wafer 2 is heated by the lamp heating mechanism 16 under the control of the lamp heating control unit 20. At this time, the electrostatic chuck is not operated, and the semiconductor wafer 2 is not fixed on the stage 4 but remains mounted.

  After that, when the temperature of the semiconductor wafer 2 on the stage 4 reaches a predetermined film formation temperature, the electrostatic chuck of the electrostatic chuck plate 11 is operated under the control of the chuck control unit 21, and the semiconductor wafer 2 Is fixed on the stage 4. Thereafter, the heating of the semiconductor wafer 2 is switched from the lamp heating mechanism 16 to the chuck heating mechanism 13, and energization of the halogen lamp 15 is stopped. Then, heating by the chuck heating mechanism 13 and cooling by the cooling mechanism 10 are repeated, so that the temperature of the semiconductor wafer 2 is maintained at a predetermined film forming temperature. Then, after elapse of a predetermined time, the evaporated film forming material is deposited on the surface of the semiconductor wafer 2 to form a film having a predetermined thickness.

  Thereafter, the shutter is closed, the chuck heating mechanism 13 is stopped, the operation of the electrostatic chuck of the electrostatic chuck plate 11 is stopped, and the fixing of the semiconductor wafer 2 on the stage 4 is released. Further, the static electricity is removed while the semiconductor wafer 2 is placed on the stage 4, and then the lift pins 22 are moved upward, taken out from the processing chamber 3 by an unillustrated unloader or the like, and the film formation is completed.

  As described above, by forming a film on the surface of the semiconductor wafer 2 using the apparatus having the above-described configuration, the temperature of the semiconductor wafer 2 can be quickly increased to a predetermined film formation temperature, and when the temperature is increased. Alternatively, since no excessive force is applied to the semiconductor wafer 2 during processing, it is possible to prevent generation of particles due to breakage or rubbing at contact points. In addition, for example, when film formation is performed by generating gas ions by plasma, heating and cooling can be performed smoothly, a predetermined film formation temperature can be properly maintained, and a required film formation can be performed. .

  Next, a second embodiment will be described with reference to FIGS. FIG. 3 is a plan view of the main part of the semiconductor manufacturing apparatus, and FIG. 4 is a plan view of the main part of a modified embodiment. Since the configuration other than the heating and cooling unit is substantially the same as that of the first embodiment, the drawings and description are omitted, and the same reference numerals are given to the same parts as those of the first embodiment, and the first embodiment. Different configurations of the present invention will be described.

  In FIG. 3, reference numeral 31 denotes a heating / cooling unit provided on the stage 4 for bringing the semiconductor wafer 2 held on the stage 4 during film formation to a predetermined temperature. The heating / cooling unit 31 is an upper surface of the stage main body 8. Cooling mechanism 10 fitted in the circular recess 9 on the side, and eight chuck heating units having a substantially trapezoidal shape around a plurality of chuck heating units, for example, a small circular chuck heating unit 32a, on the cooling mechanism 10 32h, 32i are combined in an annular shape, and are formed in a chuck heating mechanism 33 provided to be circular as a whole, and each chuck heating unit 32a, 32b, ..., 32h, 32i. And a lamp heating mechanism 16 provided so as to house a halogen lamp 15 as a heating source in each opening portion 14 opened upward. It has been made.

  Further, the chuck heating units 32a, 32b,..., 32h, 32i are electrostatic chuck plates 34a, 34b,..., 34h having electrostatic chucks for fixing the semiconductor wafer 2 on the stage 4, respectively. A resistance heater (not shown) is embedded in 34i as a heating source. Further, in the chuck heating units 32a, 32b,..., 32h, 32i, tip portions are embedded in the electrostatic chuck plates 34a, 34b, ..., 34h, 34i so that the respective temperatures can be measured. Chuck temperature sensors 35a, 35b,..., 35h, 35i are provided.

  The measurement results of the chuck temperature sensors 35a, 35b,..., 35h, 35i are obtained from the chuck control (not shown) provided in the controller corresponding to the chuck heating units 32a, 32b,. Output to the unit. Note that the measurement results of the wafer temperature sensor 17 are also input to the chuck control units corresponding to the chuck heating units 32a, 32b,..., 32h, 32i, respectively. The measurement result is also input to the lamp heating control unit 20.

  Thereby, in the lamp heating control unit 20, the energization time of the halogen lamp 15 is controlled based on the measurement result of the wafer temperature sensor 17, and the heating control of the lamp heating mechanism 16 is performed. On the other hand, in each chuck control unit, each chuck heating unit 32a, 32b,..., 32h is based on the measurement results of the chuck temperature sensors 35a, 35b,. , 32i is controlled, the chuck heating units 32a, 32b,..., 32h, 32i are heated, the chuck heating mechanism 33 is controlled, and the film forming process is performed. When the temperature of the semiconductor wafer 2 reaches a predetermined temperature set in advance, each electrostatic chuck plate 34a, 34b,..., 34h, 34i is controlled to operate the electrostatic chuck.

  And the film-forming with the apparatus comprised in this way is performed as follows. That is, first, the semiconductor wafer 2 is introduced into the processing chamber 3 in which the evaporation source 5 of the predetermined film forming material is disposed, and is placed on the stage 4 so that the film forming surface faces the evaporation source 5. Subsequently, the vacuum pump connected to the exhaust port 6 is operated to bring the inside of the processing chamber 3 into a predetermined reduced pressure state, and an atmospheric gas such as Ar is supplied from a gas source into the reduced processing chamber 3 through an inlet (not shown). And the inside of the processing chamber 3 is set to a predetermined gas atmosphere. The heating / cooling unit 31 starts energization of the halogen lamp 15 and heats the semiconductor wafer 2 by the lamp heating mechanism 16 under the control of the lamp heating control unit 20. At this time, the electrostatic chuck plates 34 a, 34 b,..., 34 h, 34 i are not operated, and the semiconductor wafer 2 is not fixed on the stage 4 but remains mounted.

  Thereafter, when the temperature of the semiconductor wafer 2 on the stage 4 reaches a predetermined film formation temperature, the electrostatic chuck plates 34a, 34b,..., 34h, 34i are controlled under the control of the chuck control units. The electrostatic chuck is operated to fix the semiconductor wafer 2 on the stage 4 and start energization of the resistance heater. By starting energization of the resistance heater, the heating of the semiconductor wafer 2 is switched from the lamp heating mechanism 16 to the chuck heating mechanism 33, and the energization of the halogen lamp 15 is stopped. Then, the controlled heating of each corresponding part by the respective chuck heating units 32a, 32b,..., 32h, 32i of the chuck heating mechanism 33 and the cooling by the cooling mechanism 10 are repeated, and the like. Is maintained at a predetermined film forming temperature.

  In addition, a predetermined voltage is applied between the evaporation source 5 and the semiconductor wafer 2 on the stage 4 by a power source, thereby causing glow discharge due to an atmospheric gas such as Ar in the processing chamber 3. When the temperature reaches a predetermined film formation temperature, the shutter between the evaporation source 5 and the stage 4 is opened, and the film forming material is evaporated from the evaporation source 5 by atmospheric gas ions ionized by glow discharge. Then, after elapse of a predetermined time, the evaporated film forming material is deposited on the surface of the semiconductor wafer 2 to form a film having a predetermined thickness.

  After that, the shutter is closed, the energization of the resistance heaters of the chuck heating units 32a, 32b,..., 32h, 32i of the chuck heating mechanism 33 is stopped, and the electrostatic chuck plates 34a, 34b,. , 34i are stopped, and the semiconductor wafer 2 is released from being fixed on the stage 4. Further, the semiconductor wafer 2 is naturally cooled while being placed on the stage 4 and cooled to room temperature, and then the lift pins 22 are advanced upward from the inside of the processing chamber 3 by an unillustrated unloader or the like. The film is taken out to finish the film formation.

  As described above, by forming a film on the surface of the semiconductor wafer 2 by the apparatus having the above-described configuration, the temperature of the semiconductor wafer 2 is quickly raised to a predetermined film-forming temperature as in the first embodiment. Further, when the temperature is raised or processed, an excessive force is not applied to the semiconductor wafer 2, so that generation of particles due to breakage or rubbing at the contact point can be prevented. Thus, heating and cooling can be performed smoothly, so that a predetermined film formation temperature can be properly maintained, and a required film formation can be performed. Furthermore, uniform heating can be performed by each of the chuck heating units 32a, 32b,..., 32h, 32i of the chuck heating mechanism 33 divided into a plurality of, for example, nine, and the in-plane temperature of the semiconductor wafer 2 can be made uniform. Can be. Further, since each chuck heating unit 32a, 32b,..., 32h, 32i can be controlled by each corresponding chuck control unit, individual differences in the heating state in the chuck heating mechanism 33 for each apparatus can be easily performed. It can be easily adjusted and corrected.

  In the present embodiment, the heating / cooling unit 31 is configured so that each chuck heating unit 32 a, 32 b,..., 32 h, 32 i of the chuck heating mechanism 33 has an opening portion 14, and a halogen lamp is provided in each opening portion 14. 15 is housed and the lamp heating mechanism 16 is provided. However, for example, it may be configured as a modification in which a main part is shown in FIG.

  That is, in FIG. 4, reference numeral 41 denotes a heating / cooling unit provided on the stage 42 for bringing the semiconductor wafer 2 held on the stage 42 during film formation to a predetermined temperature. The heating / cooling unit 41 is a stage main body 43. A cooling mechanism (not shown) fitted in each of a plurality of, for example, six substantially fan-shaped recesses 44, which are equally cut on the upper surface side of each, and a substantially fan-shaped fitting which is also fitted in the recess 44 on each cooling mechanism. .., 45f, for example, six chuck heating units 45a, 45b,..., 45f, a bank-like portion 47a formed between adjacent recesses 44 of the stage body 43, and a circular portion at the center. A lamp heating mechanism 48 is provided so as to house the halogen lamp 15 as a heating source in each opening portion 14 formed in 47b and opening upward. There.

  Further, the chuck heating units 45a, 45b,..., 45f are respectively provided in electrostatic chuck plates 49a, 49b,..., 49f having electrostatic chucks for fixing the semiconductor wafer 2 on the stage 42. A resistance heater (not shown) is embedded as a heating source. In addition, the chuck heating units 45a, 45b,..., 45f include chuck temperature sensors 50a in which tips are embedded in the electrostatic chuck plates 49a, 49b,. , 50b,..., 50f are provided.

  The measurement results of the chuck temperature sensors 50a, 50b,..., 50f are output to a chuck control unit (not shown) provided in the controller corresponding to each chuck heating unit 45a, 45b,. The Note that the measurement results of the wafer temperature sensor 17 are also input to the chuck control units corresponding to the chuck heating units 45a, 45b,..., 45f, respectively. Is also input to the lamp heating control unit 20.

  Thereby, in the lamp heating control unit 20, the energization time of the halogen lamp 15 is controlled based on the measurement result of the wafer temperature sensor 17, and the heating control of the lamp heating mechanism 48 is performed. On the other hand, in each chuck control unit, the resistance of each chuck heating unit 45a, 45b, ..., 45f is based on the measurement result of each chuck temperature sensor 50a, 50b, ..., 50f corresponding to the wafer temperature sensor 17. The heater energizing time is controlled, the heating control of each chuck heating unit 45a, 45b,..., 45f is performed, the heating control of the chuck heating mechanism 46 is performed, and a predetermined set prior to the film forming process is performed. When the temperature of the semiconductor wafer 2 reaches the temperature, the electrostatic chuck plates 49a, 49b, ..., 49f are controlled to operate the electrostatic chuck.

  And the film-forming with the apparatus comprised in this way is performed as follows. That is, first, the semiconductor wafer 2 is introduced into the processing chamber 3 in which the evaporation source 5 of the predetermined film forming material is disposed, and is placed on the stage 42 so that the film forming surface faces the evaporation source 5. Subsequently, the vacuum pump connected to the exhaust port 6 is operated to bring the inside of the processing chamber 3 into a predetermined reduced pressure state, and an atmospheric gas such as Ar is supplied from a gas source into the reduced processing chamber 3 through an inlet (not shown). And the inside of the processing chamber 3 is set to a predetermined gas atmosphere. The heating / cooling unit 41 starts energization of the halogen lamp 15 and heats the semiconductor wafer 2 by the lamp heating mechanism 48 under the control of the lamp heating control unit 20. At this time, the electrostatic chuck plates 49 a, 49 b,..., 49 f are not operated, and the semiconductor wafer 2 is not fixed on the stage 42 and remains mounted.

  Thereafter, when the temperature of the semiconductor wafer 2 on the stage 42 reaches a predetermined film formation temperature, the electrostatic chuck plates 49a, 49b,..., 49f are electrostatically controlled under the control of each chuck control unit. The chuck is operated to fix the semiconductor wafer 2 on the stage 42 and start energization of the resistance heater. By starting energization of the resistance heater, the heating of the semiconductor wafer 2 is switched from the lamp heating mechanism 48 to the chuck heating mechanism 46, and energization of the halogen lamp 15 is stopped. Then, the temperature of the semiconductor wafer 2 is changed by repeating controlled heating for each corresponding part by the respective chuck heating units 45a, 45b,..., 45f of the chuck heating mechanism 46 and cooling by the cooling mechanism. A predetermined film formation temperature is maintained.

  In addition, a predetermined voltage is applied between the evaporation source 5 and the semiconductor wafer 2 on the stage 42 by a power source, thereby causing glow discharge due to an atmospheric gas such as Ar in the processing chamber 3. When the temperature reaches a predetermined film forming temperature, the shutter between the evaporation source 5 and the stage 42 is opened, and the film forming material is evaporated from the evaporation source 5 by atmospheric gas ions ionized by glow discharge. Then, after elapse of a predetermined time, the evaporated film forming material is deposited on the surface of the semiconductor wafer 2 to form a film having a predetermined thickness.

  Then, the shutter is closed, the energization of the resistance heaters of the chuck heating units 45a, 45b,..., 45f of the chuck heating mechanism 46 is stopped, and the electrostatic chuck plates 49a, 49b,. The operation of the electric chuck is stopped, and the fixing of the semiconductor wafer 2 on the stage 42 is released. Further, the semiconductor wafer 2 is naturally allowed to cool while being placed on the stage 42 to cool to room temperature, and then the lift pins 22 are advanced upward from the inside of the processing chamber 3 by an unillustrated unloader or the like. The film is taken out to finish the film formation.

  As described above, by forming a film on the surface of the semiconductor wafer 2 using the apparatus having the above-described configuration, the same effect as in the second embodiment can be obtained.

  In each of the above-described embodiments, the lamp heating mechanisms 16 and 48 are collectively controlled by the single lamp heating control unit 20. However, the lamp heating mechanisms 16 and 48 correspond to the halogen lamps 15 of the lamp heating mechanisms 16 and 48, respectively. Thus, a lamp heating control unit may be provided to control the halogen lamps 15 individually.

1 is a longitudinal sectional view showing a schematic configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. It is a top view of the principal part in the 1st Embodiment of this invention. It is a top view of the principal part of the semiconductor manufacturing apparatus which concerns on the 2nd Embodiment of this invention. It is a top view of the principal part of the modification in the 2nd Embodiment of this invention.

Explanation of symbols

2: Semiconductor wafer 3: Processing chamber 4: Stages 13, 33, 46: Chuck heating mechanism 11: Electrostatic chuck plate 16, 48: Lamp heating mechanism 32a, 32b,..., 32h, 32i: Chuck heating unit 34a, 34b, ..., 34h, 34i: Electrostatic chuck plates 45a, 45b, ..., 45f: Chuck heating units 49a, 49b, ..., 49f: Electrostatic chuck plates

Claims (4)

  A stage for holding the substrate to be processed in the processing chamber, a lamp heating mechanism for heating the substrate to be processed provided on the stage, and chuck heating for fixing and heating the substrate to be processed provided on the stage to the stage And a lamp heating mechanism and a chuck heating mechanism that can be independently temperature controlled.   2. The semiconductor manufacturing apparatus according to claim 1, wherein the substrate to be processed is heated and heated to a predetermined temperature by the lamp heating mechanism and then fixed and held on the stage by the chuck heating mechanism to maintain the predetermined temperature. .   The semiconductor manufacturing apparatus according to claim 1, wherein the chuck heating mechanism includes a plurality of heating units that are independently temperature-controllable.   A substrate processing method characterized in that a substrate to be processed held on a stage in a processing chamber is heated to a predetermined temperature and then fixed and held on the stage and processed while maintaining the predetermined temperature.

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