KR101935957B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

An embodiment of the present invention provides an apparatus and method for processing a substrate by supplying a gas to a process chamber. The substrate processing apparatus includes a first chamber having an opening formed therein, the chamber having a first chamber having an opening, a support member disposed in the first space for supporting the substrate, a gas supply for supplying a process gas for processing the substrate to the first space, A second chamber located at one side of the first chamber and defining a second space in communication with the first space through the opening, a heating plate provided with a heater, and a second chamber located in the second space, And a transfer member for transferring the plate between the first space and the second space. This makes it possible to effectively remove the product material produced on the surface of the substrate after the process.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate by supplying gas to the process chamber.

 In order to manufacture a semiconductor device, the substrate is processed by various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among these processes, wet etching and dry etching are used to remove unnecessary films formed on a substrate.

Dry etching can remove unnecessary films with high selectivity compared to wet etching. Generally, a plasma type etching apparatus is used for dry etching. The etching apparatus performs the process through the substrate processing step and the annealing step. The substrate processing step supplies a process gas on the substrate on which the radical is formed through the showerhead. The process gas reacts with the oxide film formed on the surface of the substrate to etch the oxide film. The material produced by the reaction with radicals remains in an excited state on the substrate. The annealing step is a step for removing the material produced on the substrate, which is performed in a chamber other than the process chamber in which the substrate processing step is performed. However, the above-described method has been time-consuming because of the time required for the substrate to be transported as each step proceeds in different spaces.

To solve this problem, a method of performing an annealing process using a heater provided in a chuck or a shower head in a process chamber has been proposed. In this case, the heater in the substrate processing step and the heater in the annealing step have different temperatures from each other. As a result, it takes a lot of time to change the heater to the proper temperature.

The present invention provides a substrate processing apparatus and method capable of effectively removing an oxide film on a substrate.

The present invention also provides a substrate processing apparatus and method that can reduce the time required for performing a substrate processing step and an annealing step.

An embodiment of the present invention provides an apparatus and method for processing a substrate by supplying a gas to a process chamber. The substrate processing apparatus includes a first chamber having an opening formed therein, the chamber having a first chamber having an opening, a support member disposed in the first space for supporting the substrate, a gas supply for supplying a process gas for processing the substrate to the first space, A second chamber located at one side of the first chamber and defining a second space in communication with the first space through the opening, a heating plate provided with a heater, and a second chamber located in the second space, And a transfer member for transferring the plate between the first space and the second space.

And a door that opens and closes the opening. The heating plate may be fixedly installed on the conveying member. The support member including a stage having an upper surface over which the substrate is placed; The heating plate may be positioned to face the upper surface of the stage in the first space. Wherein the gas supply unit includes a showerhead which is positioned on the stage and has a plurality of holes formed on a bottom surface thereof; The heating plate may be positioned between the stage and the showerhead in the first space. The heating plate is located between the gas supply unit and the support member in the first space, and the heating plate may have a plurality of through holes passing through the upper and lower surfaces thereof. The heating plate may have a larger area than the substrate.

The substrate processing method further includes a loading step of placing the substrate on a stage positioned in the first chamber, a substrate processing step of supplying the processing gas to the processing surface of the substrate, a step of heating the substrate from outside the first chamber And an annealing step of heating the processing surface of the substrate with the heating plate.

In the annealing step, a purge gas is supplied into the first chamber. The purge gas may be supplied to the processing surface of the substrate through the through holes formed in the heating plate to purge the by-products formed on the processing surface. In the annealing step, a lift pin provided in the stage may be moved to an upper portion of the stage to separate the substrate from the upper surface of the stage, and to adjust the distance between the substrate and the heating plate.

According to the embodiment of the present invention, it is possible to effectively remove the generated material on the surface of the substrate after the process.

In addition, according to the embodiment of the present invention, it is possible to reduce the time required for performing the substrate processing step and the annealing step.

1 is a plan view schematically showing a substrate processing facility of the present invention.
2 is a cross-sectional view showing a substrate processing apparatus of the substrate processing apparatus of FIG.
FIGS. 3 and 4 are cross-sectional views illustrating a process of etching a substrate in the substrate processing apparatus of FIG. 2. FIG.
5 is a cross-sectional view showing another embodiment of FIG.
6 is a cross-sectional view showing another embodiment of FIG.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

In the embodiment of the present invention, a substrate processing apparatus and method for etching an oxide film on a substrate W will be described. However, the present invention is not limited thereto, and may be applied to various processes such as an ashing process for removing a film formed on the surface of a substrate.

Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 6. FIG.

1 is a plan view schematically showing a substrate processing facility of the present invention. 1, the substrate processing apparatus 1 includes a facility front end module 10 and a processing module 20. [ The plant front end module 10 is disposed in front of the processing module 20. The facility front end module 10 has a plurality of load ports 100 and an index portion 200. The index portion 200 is disposed between the load port 100 and the process module 20. The index unit 200 transfers the substrate W between the load port 100 and the process module 20. [ Each load port 100 provides a space in which a container (FOUP) accommodating the substrate W is placed. The index unit 200 has an index robot 210. The index robot 210 takes out the substrate W before the process processing from the container FOUP placed on the load port 100 and transfers the substrate W processed by the process module 20 or processed from the process module 20 Take it into the container (FOUP).

The process module 20 includes a transfer chamber 300, a load lock chamber 400, and a plurality of substrate processing apparatuses 500. The transfer chamber 300 has a generally polygonal shape when viewed from above. A load lock chamber 400 and a plurality of substrate processing apparatuses 500 are disposed on each side of the transfer chamber 300. The load lock chamber 400 is disposed at a position adjacent to the facility front end module 10 among the respective sides of the transfer chamber 300. A transfer robot 310 is disposed inside the transfer chamber 300. The transfer robot 310 transfers the substrate W between the load lock chamber 400 and the substrate processing apparatuses 500.

The load lock chamber 400 provides a space for temporary storage of the substrates W carried in or out of the process module 20. [ The inside of the load lock chamber 400 can be switched to vacuum and atmospheric pressure to keep the transfer chamber 300 and the interior of the substrate processing apparatus 500 in a vacuum and the inside of the facility front end module 10 can be maintained at atmospheric pressure. have. Gate valves 250 and 350 are installed between the load lock chamber 400 and the transfer chamber 300 and between the load lock chamber 400 and the facility front end module 10, respectively. Only one gate valve 250 or 350 can be opened so that each of the gate valves 250 and 350 can be kept vacuum inside the transfer chamber 300 and the substrate processing apparatus 500.

Each of the substrate processing apparatuses 500 performs a process of processing the substrate W. Each of the substrate processing apparatuses 500 includes a first chamber 520, a support member 550, a gas supply unit, a second chamber 620, a transfer member 630, and a heating plate 640.

The first chamber 520 has a first space 510 formed therein. One side wall of the first chamber 520 is provided with an inlet 371 through which the substrate W is introduced. The inlet 371 is disposed adjacent to the transfer chamber 300. A gate valve 370 is provided at the inlet 371, and a gate valve 370 opens and closes the inlet 371. An opening 701 is formed in the other side wall of the first chamber 520. A door 700 is provided in the opening 701, and the door 700 opens and closes the opening 701. An exhaust line 560 is connected to the lower wall of the first chamber 520 and an exhaust line 560 is connected to the decompression member 562. The exhaust line 560 is depressurized by the decompression member 562 so that the interior of the first chamber 520 is maintained in a vacuum state. The exhaust line 560 also exhausts the foreign substances generated in the first chamber 520 to the outside.

The support member 550 supports the substrate W in the first chamber 520. The support member 550 includes a stage 552, a cooling member 556, and a lift pin (555 of Figs. 5 and 6). The stage 552 is disposed on the bottom surface of the first chamber 520. The substrate W is placed on the upper surface of the stage 552. The stage 552 is provided on its flat surface. The stage 552 includes an electrostatic chuck for fixing the substrate W by an electrostatic force. Inside the stage 552, a cooling member 556 is provided. The cooling member 556 includes a flow path formed inside the stage 552 and the cooling water flowing through the flow path cools the stage 552 and the substrate W. [ On the upper surface of the stage 552, a plurality of pinholes 554 are provided. Each pinhole 554 is provided with a lift pin 555. The lift pin 555 is connected to a driving member (not shown). The lift pin 555 is movable in the upper direction of the stage 552 so that the upper end of the lift pin 555 protrudes from the upper surface of the stage 552.

The gas supply unit selectively supplies the process gas and the purge gas onto the substrate W supported by the support member 550. The gas supply unit has a plasma chamber 530, a process gas supply unit 574, a purge gas supply unit 572, and a showerhead 540.

The plasma chamber 530 is located above the first chamber 520. The plasma chamber 530 is connected to the upper wall of the first chamber 520. The plasma chamber 530 has a discharge space formed therein. A coil 532 is provided outside the plasma chamber 530. The coil 532 is provided to wind the plasma chamber 530 a plurality of times, and is connected to an external power supply 534. A current is applied to the coil 532 in accordance with the on / off state of the external power source 534. An electric field is formed in the discharge space by the current applied to the coil 532. The electric field excites the gas supplied to the discharge space into a plasma state.

The process gas supply unit 574 is connected to the plasma chamber 530 and supplies the process gas to the discharge space. When the process gas is supplied to the discharge space, the external power source 534 is turned on and the process gas is excited.

The purge gas supply part 572 is connected to the first chamber 530 and supplies purge gas to the discharge space. When the purge gas is supplied to the discharge space, the external power source 534 is turned off.

The showerhead 540 is installed inside the first chamber 520. The showerhead 540 is installed so as to face the upper surface of the stage 552. A plurality of spray holes 541 are formed on the bottom surface of the showerhead 540. The gas supplied to the interior of the first chamber 520 is uniformly supplied to the substrate W through the injection holes 541 of the showerhead 540.

The second chamber 620 is positioned adjacent to the other side wall of the first chamber 520. A second space 610 is formed in the second chamber 620. The second space 610 of the second chamber 620 is communicated with the first space 510 through the opening 701.

The transfer member 630 is fixed to the second space 610. The transfer member 630 moves the heating plate 640 between the first space 510 and the second space 610. A heating plate 640 is fixed to one end of the conveying member 630. According to one example, the transfer member 630 may position the heating plate 640 in the first space 510 to be disposed adjacent to the substrate W. The position adjacent to the substrate W may be a position opposite to the upper surface of the stage 552. [ The position opposite to the upper surface of the stage 552 may be a space between the stage 552 and the showerhead 540.

Alternatively, the transfer member 630 may be provided such that the heating plate 640 can be detached and mounted. In this case, a buffer member (not shown) may be provided in the second space 610. The buffer member (not shown) may provide a space for temporarily storing the heating plate 640.

A heater (not shown) is provided inside the heating plate 640. Heat generated in the heater (not shown) is transferred to the heating plate 640, and heats the substrate W through the heating plate 640. For example, the temperature of the heating plate 640 may be 100 ° C to 150 ° C. The heating plate 640 has a multi-plate or disc shape. The heating plate 640 may be provided with a width equal to or larger than that of the substrate W on one side thereof. The heating plate 640 is formed with a plurality of through holes 641 passing through the upper and lower surfaces thereof. The through holes 641 allow the purge gas supplied from the showerhead 540 to pass down the heating plate 640

Next, a method of processing the substrate W using the above-described substrate processing apparatus 500 will be described. The index robot 210 takes out the substrate W loaded in the container FOUP. The index robot 210 moves the unloaded substrate W to the load lock chamber 400. When the substrate W is placed in the load lock chamber 400, the space between the load lock chamber 400 and the index portion is blocked by the gate valve 250 and the inside of the load lock chamber 400 is evacuated from the atmospheric pressure . The space between the load lock chamber 400 and the transfer chamber 300 is opened by the gate valve 350 when the inside of the load lock chamber 400 is maintained in a vacuum state. The transfer robot 310 transfers the substrate W placed in the load lock chamber 400 to the first chamber 520 of the substrate processing apparatus 500.

3 and 4 are cross-sectional views showing a process of etching a substrate in a substrate processing apparatus. Referring to FIGS. 3 and 4, a method of etching the substrate W includes a substrate processing step and an annealing step. The substrate processing step and the annealing step are sequentially performed. When the substrate W is placed on the upper surface of the stage 552 in the substrate processing step, the gate valve 370 closes the inlet 371 of the first chamber 520. The stage 552 fixes the substrate W. A process gas is supplied into the plasma chamber 530. The external power source 534 is turned off and turned on, and an electric field is formed inside the plasma chamber 530. The process gas forms radicals by an electric field. The radical-formed process gas is supplied onto the substrate W through the showerhead 540. The process gas having the radical formed thereon can selectively remove the oxide film formed on the surface of the substrate W. [ On the substrate W, the oxide film reacts with the radicals and remains as a generated material in an excited state.

Upon completion of the substrate processing step of supplying the process gas, the annealing step proceeds. In the annealing step, the supply of the process gas is stopped and the external power supply 534 is turned off. The opening 701 is opened by the door 700 and the conveying member 630 moves the heating plate 640 from the first space 510 to the space between the stage 552 and the showerhead 540. A heater provided inside the heating plate 640 generates heat to heat the processing surface of the substrate W. The purge gas is supplied to the first space 510. The purge gas is supplied onto the substrate W sequentially through the injection holes 541 of the showerhead 540 and the through holes 641 of the heating plate 640. The product material remaining on the substrate W is heated and simultaneously purged and removed by the purge gas. The removed product material is exhausted to the outside through the exhaust line 560.

When the annealing step for heating the substrate W is completed, the transfer member 630 moves the heating plate 640 to the second space 610. The door 700 blocks the opening 701, and the gate valve opens the inlet of the first chamber 520. The transfer robot 310 transfers the substrate W from the first chamber 520 to the load lock chamber 400. When the substrate W is placed in the load lock chamber 400, the gate valves 350 and 3530 installed on both sides are shut off and the inside thereof is switched from vacuum to atmospheric pressure. The gate valve 250 is then opened and the index robot 210 receives the substrate W into the interior of the container.

The height of the substrate W can be adjusted in accordance with the movement of the lift pins 555 as shown in FIG. In this case, the interval between the substrate W and the showerhead 540 can be adjusted.

Further, in the annealing step, the distance between the substrate W and the heating plate 640 can be adjusted as shown in FIG.

Also, in the above-described embodiment, the plasma is generated outside the first chamber 520 and then supplied into the first chamber 520, for example. However, the first chamber 520 may be provided with an electrode for generating a plasma so that plasma is generated in the first chamber 520. [

Also, in the above-described embodiment, the process gas and the purge gas are supplied through the showerhead 540. However, the process gas and purge gas may be supplied into the first chamber 520 through one or a plurality of nozzles.

500: substrate processing apparatus 520: first chamber
550: support member 620: second chamber
630: Heating plate

Claims (10)

A first chamber having a first space formed therein, the first chamber having an opening;
A support member disposed in the first space and supporting the substrate;
A gas supply unit for supplying a gas for processing the substrate into the first space;
A second chamber located at one side of the first chamber and defining a second space communicating with the first space through the opening;
A heater provided with a plurality of through holes passing through the upper surface and the lower surface;
And a transfer member which is located in the second space and moves the heating plate between the first space and the second space,
The gas supply unit includes:
A process gas supply unit for supplying the process gas to the first space;
A purge gas supply unit for supplying a purge gas to the first space;
And a showerhead disposed on the support member and having a plurality of holes through which a process gas or a purge gas is supplied to the bottom surface;
Wherein the transfer member places the heating plate in the second space when the process gas is supplied to the first space and places the heating plate in the first space when the purge gas is supplied to the first space,
Wherein the heating plate is positioned between the support member and the showerhead in the first space. The method according to claim 1,
And a door that opens and closes the opening. The method according to claim 1,
And the heating plate is fixedly installed on the conveying member. 4. The method according to any one of claims 1 to 3,
Wherein the support member comprises:
A stage having an upper surface on which the substrate is placed;
Wherein the heating plate is located opposite the upper surface of the stage in the first space. delete delete 4. The method according to any one of claims 1 to 3,
Wherein the heating plate has a larger area than the substrate. Placing a substrate on a stage located in a first chamber;
A substrate processing step of supplying a process gas to the process surface of the substrate;
And an annealing step of heating the treated surface of the substrate with a heating plate,
Wherein the substrate processing step includes positioning the heating plate in a second chamber located outside the first chamber,
And the purge gas is supplied to the processing surface of the substrate through the through hole formed in the heating plate to purge the byproduct formed on the processing surface, Of the substrate. delete 9. The method of claim 8,
In the annealing step,
Wherein a lift pin provided in the stage is moved to an upper portion of the stage to move the substrate away from the upper surface of the stage and to adjust the gap between the substrate and the heating plate.

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